国产GaAs二极管的低温性能

在低温下,二极管正向压降是随着温度的降低而增加.早在六十年代初期,利用二极管的这一特性,探索低温测温技术就已引起人们的广泛兴趣.1966年GaAs二极管温度计进入了商品市场.为低温测量、控温技术增添了新的内容。 人们通常认为.GaAs二极管温度计的优点为(1)量程宽(1—400K),(2)受磁场影响不大.但是,有的GaAs二极管在30K下灵敏度不高,有的在10—20K有一灵敏度的     

X波段高灵敏度超导前端组件

X波段超导前端组件应用于高灵敏度接收机,选频放大微弱信号,抑制发射泄露信号干扰,能够显著提高接收机的灵敏度和抗干扰能力。该组件主要包括三种器件:高温超导滤波器、低温低噪声放大器和低温隔离器。组件在15K温度平台下,主要性能指标为:等效噪声温度小于13K,增益31dB,发射频率抑制度大于110dB,承受阻带连续波功率3W,输入输出驻波比均小于1.25。     

硅二极管低温温度计性能实验与分析

主要介绍了一款硅二极管温度计以及其配套干、湿式低温测试系统,对其灵敏度、互换性、测温精度、重复性等进行实验,并拟合了标准特性曲线。结果表明：互换性温差低至±0.2 K@4 K;低温下灵敏度最高可达-38 mV/K;测温精度<12 mK@77 K;适合低温下的测温应用。     

低温下P-N结的V_F-T特性

本文讨论了低温下P-N结的正向电压降V_F随温度T变化的特性。对几种硅与砷化镓二极管的V_F-T特性,在4—300K的温区进行了测量。实验与分析表明国产二极管可用作低温宽温区测温探头。对其应用的可能性进行了分析。     

低压、反向偏压,铒和钕注入的ZnSe发光二极管

由铒和钕注入的ZnSe单晶所制备的发光二极管有很好的电致发光.这些二极管的外能量效率大约为5×10-5W/W,并且可以在很低电压下和低温下(77K)工作.这些二极管发射光谱显示了三价稀土离子饵和汝的特征辐射.     

Ka波段低温低噪声放大器的研制

介绍了Ka波段低温低噪声放大器的设计和试验结果。在物理温度小于20K的环境下,噪声温度小于23K,输入输出回波损耗小于-12dB,0¹00GHz内无条件稳定。该组件将用于接收系统中的低温接收前端,能提高雷达的灵敏度和有效作用距离。     

低温下Ⅲ-Ⅴ族半导体P-N结的V_F-T特性

在4—300K的温区里,对正向恒定电流为10μA的几种GaAs、GaAsP、GaP二极管,进行了正向电压降V_F温度特性的测量.结果表明,低温下这类二极管可用作宽温区的测温探头.D_2管的性能优于其它的二极管.本文对实验结果作了讨论.     

低温下掺镱磷酸盐激光玻璃的光谱和激光特性

根据低温下测得的Yb^3 ：磷酸盐玻璃的吸收光谱和荧光光谱。计算了Yb^3 离子在磷酸盐玻璃中的能级结构，并解释了荧光寿命在低温下变化异常的原因。在低温下采用940nm的二极管激光器抽运Yb^3 ：磷酸盐玻璃获得了准连续激光输出，在热力学温度为8K时最大输出功率为2mW，斜率效率为4％，激光中心波长为1000m。     

L波段低温低噪声滤波放大组件设计研究

仿真和设计了一种以超导滤波器和低温低噪声放大器为核心的滤波放大组件,在77K温度下,该组件带外抑制大于100d B,在工作频段内,噪声系数优于0.44d B,增益为29.9±0.4d B,输入回波损耗优于-13.8d B,满足设计指标要求。     

超低温宽带高超噪比噪声源的设计与测量

为了测量射电望远镜低温接收机系统实时的等效噪声温度,通过测试噪声二极管在20 K温区下的散射参数(S参数)的基础上,设计宽带阻抗匹配电路,研制了一款能够在20 K以下温区稳定工作的噪声源,构建了低温噪声源超噪比测试平台,在1 GHz～10 GHz频段范围内,噪声源超噪比大于25 dB,超噪比平坦度小于±1.5 dB,具有噪声信号输出的控制功能。     

在蓝宝石衬底上生长的氧化锌p-n同质结发光二极管

用等离子体辅助的分子束外延的方法在蓝宝石衬底上生长了氧化锌的p-n同质结发光二极管。在实验中p型ZnO层是采用NO等离子体作为掺杂剂生长的。在低温下,二极管的I-V特性曲线显示了典型的p-n结整流特性,并且具有很低的开启电压（4V）。在实验中得到了位于蓝紫区的电致发光。     

Cryogenic operation of submillimeter quasioptical mixers

We report here the first results obtained by cooling a submillimeter quasioptical mixer, utilizing a Schottky diode in a corner reflector mixer structure. Measurements have been carried out at a wavelength of 434 microns. The diode inverse slope parameter V_o at low current decreases by a factor of 3 upon cooling to 50 K while the minimum system noise temperature of 5600 K (SSB), including the IF contribution, demonstrates a reduction of approximately 40% from the ambient temperature value. We also report improved system noise temperatures at 184 m and 119 m wavelengths of 38000 K and 64000 K (SSB), respectively.This work was supported by the Army Research Office and the Air Force Office of Scientific Research     

一种高效的2.45 GHz二极管阵列微波整流电路

 采用4只HSMS 282肖特基二极管阵列,对大功率微波整流电路进行了研究。构造了基于微带线结构的2.45 GHz高效微波整流电路,将微波整流单元电路的输入功率提升到33 dBm。仿真和实验结果表明,在一定微波输入功率的条件下,整流电路在负载较大范围内变化时保持了高整流效率。通过在不同微波输入功率和负载下进行测量,发现当输入微波功率为27.0~31.7 dBm之间变化时,最高整流效率均达到了60%以上,当微波输入功率为30 dBm时,微波整流电路效率达到了63.3%。     

Different Er centres in Si and their use for electroluminescent devices

At low temperatures, Er in Si produces a big variety of spectra in the 1.5 μm region which can be identified by high-resolution spectroscopy as being due to either interstitial Er or different complexes of Er with oxygen, intrinsic defects and other light impurities. Although the luminescence yield can be improved by codoping with light elements (C, N, O, F, etc.) all of these centres show strong thermal quenching of the luminescence above 150–200 K. There is, however, one type of rather broad spectrum in heavily Er- and O- doped Si, which is seen up to temperatures of 400 K and above. This spectrum can be excited in Si by hot electrons generated in a reverse biased diode. The same spectrum appears also in other Si related materials like porous Si and in silica with the same temperature dependence. In these materials, excitation spectroscopy is possible and it shows also close agreement of the excitation spectra. From these findings we infer that Er is incorporated in another surrounding and we propose Si–Er–O nano-precipitates since the spectra of other candidates, like Er₂O₃, are clearly different. We review recent work on the excitation and quenching mechanisms and we discuss consequences for technology.     

用Proteus仿真二极管特性实验

物理实验中,二极管是最常用的电子元器件。教学中为了让学生理解二极管的特性和使用,借助于Protues软件设计了二极管特性实验仿真教学。通过仿真波形图或实时效果图示,使学生理解利用普通二极管的单向导电特性做整流电路,将交流电变换成直流电,稳压二极管能够稳定输出电压,发光二极管发出亮光,能够显示图形符号,传递信息。     

A wide-narrow well design for?understanding the?efficiency droop in?InGaN/GaN light-emitting diodes

The electroluminescence efficiency at room temperature and low temperature (15 K) in a wide-narrow-well InGaN/GaN light-emitting diode with a narrow last well (1.5 nm) and a narrow next-to-last barrier (5 nm) is investigated to study the efficiency droop phenomenon. A reduced droop in the wide wells and a reduced droop at low temperatures reveals that inferior hole transportation ability induced Auger recombination is the root for the droop at high excitation levels.     

Influence of injection current and temperature on electroluminescence in InGaN/GaN multiple quantum wells

Electroluminescence (EL) spectra of blue InGaN/GaN multiple-quantum-well light-emitting diode (LED) have been investigated over a wide range of injection current (0.001–200 mA) and at various temperatures (6–300 K). Surprisingly, with increasing the injection current the EL peak energy shows an initial blueshift accompanied by a broadening of the EL linewidth at low temperatures (below 30 K). This trend differs from the usual photoluminescence (PL) measurement results, which have shown that with increasing the optical excitation power the PL peak energy gave an initial blueshift accompanied by a narrowing of the PL linewidth at low temperatures. The anomalous current behavior of the EL spectra may be attributed to electron leakage results in the failure of Coulomb screening effect and the relative enhancement of the low-energetic localized state filling at low temperatures and low currents. The electron leakage for the LED is further confirmed by both the current dependence of the EL intensity and the temperature dependence of the EL efficiency.     

基于TDLAS技术的水汽低温吸收光谱参数测量

精确的气体光谱参数对气体浓度、温度等的光谱精确反演测量具有十分重要的意义,针对当前主流光谱数据库(例如HITRAN)中数据与实际数值存在相当误差的问题,自主研制了一套基于静态冷却技术的低温光谱实验平台,用于精确测量低温下的气体吸收光谱参数.运用该低温光谱实验平台,采用可调谐二极管激光吸收光谱(TDLAS)技术测量了温度为230—340 K、压强为10—1000 Pa时7240—7246 cm~(-1)波段的纯水汽振转跃迁光谱.采用Voigt线型多峰拟合方法,获得了5条水汽振转跃迁谱在不同温度、不同压强下的积分吸光度值及洛伦兹展宽值,运用线性拟合的方法得到这5条吸收线的自展宽半峰全宽系数及参考温度下的线强值.运用不确定度传递公式,计算得到实验结果的不确定度,与HITRAN2012数据库中的线参数进行对比,所测的5条吸收线中实验结果与数据库值最大相差10.96%,且实验结果的不确定度为1.11%—2.98%(置信概率p=95%,包含因子k=2),小于HITRAN2012数据库值的不确定度.     

Effect of the optical excitation signal intensity on the impulse response of a metal-semiconductor-metal photodiode

The effect of the optical excitation signal intensity on the impulse response of a photodetector based on a set of metal-semiconductor-metal (MSM) rectifier contacts is studied. The response of the detector is better at a low optical excitation signal. When the energy of an optical excitation pulse is high, the response can be improved by increasing the bias voltage. The advantages of a GaN-based MSM diode in detecting high- energy radiation pulses are established. It is shown that the speed of the GaN-based MSM detector may reach 25 ps for a 60-pJ optical excitation pulse at a wavelength of 290 nm.     

飞行器性能样机虚拟试验系统研究与实现

为实现航天飞行器研制中性能样机模型的充分利用,提出了飞行器性能样机虚拟试验系统的总体方案,通过试验基础数据库、试验数据管理、验证辅助工具、虚拟试验应用等子系统划分和工作流程设计,提供对虚拟试验的全流程支持。系统突破了试验数据对象化管理、试验流程建模等关键技术,并基于虚拟试验支撑平台VITA完成了相应系统实现,在多个飞行器研制过程中开展了典型应用。