脉冲变压器磁芯重复频率复位电路的研究

为了提高脉冲变压器磁芯的利用率,需要给脉冲变压器施加退磁电流,使磁芯达到负向饱和点以获得最大的磁感应强度增量。研究了一种工作电压在几十伏的重复频率脉冲复位电路,产生反向脉冲电流,实现磁芯复位。研究了不同复位电容容量和充电电压条件下的磁芯复位效果,发现磁芯复位效果与复位电容所储存的能量具有正相关性。综合考虑脉冲变压器工作的要求,选用较低工作电压和较大复位电容容量的方案。对比分析了有无磁芯复位时硅钢带环形磁芯脉冲变压器的磁化特性,说明了加入复位电路的必要性。试验表明,该复位电路在50 Hz重复频率下可长时间稳定运行。     

快脉冲大尺寸非晶态磁芯研究进展

通过对带绕非晶态软磁合金磁芯片间绝缘技术的几种方法、磁场热处理技术以及绝缘封装技术的研究,实现了非晶态磁芯片间0.6~1.0μm厚SiO2绝缘涂层以及片间击穿电压不低于120 V直流;非晶态磁芯纵磁热处理剩磁比大于0.90,横磁热处理剩磁比小于0.20,且绝缘封装前后磁芯磁性能变化小于5%。通过对快脉冲条件下带绝缘涂层大尺寸带绕非晶态软磁合金磁芯的研究,测试获得了试验磁芯的脉冲磁导率以及磁通跳变,其中1 000 mm级铁基非晶磁芯在脉冲间隔500 ns、脉冲宽度120 ns三脉冲串条件下,磁通跳变达到了2.86 T。     

电压调控型有机光电倍增探测器

采用改变有机探测器活性层中给受体比例的方法,实现器件工作电压的可调性.研究PBDT-TT-F∶PC_(61)BM∶C_(60)光电倍增型器件中不同PC_(61)BM浓度对空穴隧穿注入电压的影响.在接近600%的外量子效率下,通过调控PC_(61)BM的浓度,既可以获得-3 V较低工作电压器件,也可以获得-6 V较高工作电压器件.结果表明,通过调节活性层中PC_(61)BM的浓度,可以改变激子解离率和空穴传输能力,引起阳极对空穴注入电流收集率的变化,最终达到调控工作电压要求.本文为实现工艺简单、低工作电压且可调的倍增型有机光电探测器提供了参考.     

基于高温超导本征约瑟夫森效应的新型两端恒流器件

我们利用高温超导本征约瑟夫森效应,研制了一种超导薄膜两端恒流器件.恒流器件是将生长在斜切20度LaAlO3基片上的Tl-2212超导薄膜光刻成微桥得到的.对于6μm×8μm的微桥器件,其最高工作电压可达15V以上,当两端电压在1V～11V之间变化时,电流基本稳定在4.3mA,误差不超过±5%,动态内阻大于104 Ω,在最佳工作位置(3V～8V)动态内阻可以达到105 Ω.通过数字模拟,对实际应用中两端恒流器件的rf调制进行了较详细的分析,并可使恒定电流上rf调制小于1%.     

偏置电压对磁致伸缩/压电层合换能结构磁电性能影响

分析和测试了偏置电压调整时PZT5/Terfenol-D/PZT8层合换能结构磁电性能. 提出了一种磁致伸缩/压电层合磁电换能结构的一阶谐振频率控制方法. 通过改变压电驱动层的直流电压对磁电层合结构的预应变进行改变, 从而调整谐振频率. 分析偏置电压、 应变、 弹性模量、 谐振频率和谐振磁电电压系数之间关系. 分析表明: 在较小应变情况下, 控制电压几乎可以线性调节谐振频率, 而层合结构谐振磁电电压系数几乎与偏置电压无关. 实验研究验证: 理论与实验结果较好吻合. 在-170 V-+170 V的偏置电压时, 谐振频率可以几乎线性调整. 最大频率调整量达到1 kHz, 偏置电压对一阶纵振频率的控制率达到: 2.94 Hz/V. 在偏置磁场为0-225 Oe时, 谐振频率调整量与偏置磁场无关. 偏置磁场会改变谐振磁电电压系数, 在大于178 Oe静态磁场偏置时, 磁电电压系数最大, 达到1.65 V/Oe.     

绝缘磁芯平面变压器的漏磁补偿

针对绝缘磁芯平面变压器因绝缘膜而产生的漏磁问题,提出了在每层次级线圈的两端并联补偿电容的解决方法。通过理论分析给出了补偿电容大小的推导公式,利用CST和Protel对搭建的绝缘磁芯平面变压器的仿真计算发现,引入补偿电容后,变压器总的输出电压提高了约17.6%,同时各层次级线圈输出电压的大小基本相同。仿真结果与实验结果一致,从而验证了并联补偿电容方法的有效性。     

直线变压器驱动源磁芯能量传递效率

磁芯是直线变压器驱动源(LTD)的关键部件之一,起着初、次级能量传递和次级电压感应叠加的作用,磁芯的能量传递效率对LTD系统的效率、体积和重量影响显著。对LTD系统中影响磁芯能量传递效率的原因进行了初步的分析,并利用Pspice软件的非线性磁芯模型对磁芯的工作过程和损耗进行了模拟计算,最后对LTD磁芯的能量传递效率进行了初步的实验研究,在工作电压为20 kV时、脉宽约220 ns时,在2.8 Ω负载上获得了大于60%的能量传递效率。     

Ni-Zn铁氧体的动态磁特性

设计并制作了基于没有附加磁芯复位电路的单级、双级磁脉冲压缩系统电路,用于测试Ni-Zn铁氧体磁芯在μs及亚μs级脉冲激励下的动态磁特性。磁芯的磁滞回线由测量到的磁开关两端电压和电流数据经计算得到,由磁滞回线可知磁芯在μs及亚μs级脉冲激励下的各种特性参数如饱和磁感应强度、剩余磁感应强度、矩形比、磁通密度跳变、矫顽力、饱和磁场强度及单位体积材料磁滞损耗;通过比较两块磁芯在μs及亚μs级脉冲激励下的各种动态磁特性参数可知:两块磁芯随激励脉冲宽度变窄磁芯磁性能有不同程度的下降,亚μs级脉冲激励下的矫顽力和单位体积材料磁滞损耗都比μs级脉冲激励下增大约3倍;饱和磁感应强度小、剩余磁感应强度大的Ni-Zn铁氧体磁芯动态磁特性性能优异,适合用于更窄脉冲的压缩电路中。     

网格结构微环谐振电光开关阵列的特性分析

设计了由N+1条水平通道、N条竖直通道和2 N个微环构成的电光开关阵列器件,并对其传输特性进行了分析.通过在列微环上加载不同的工作电压,实现相应通道的开关功能.以5×4通道8微环结构为例,取波导芯的宽度与厚度均为1.5μm,波导芯与电极之间的限制层厚度为2.0μm,电极厚度为0.05μm,微环与通道之间的耦合距离为0.1μm.当开关电压为8V时,该器件的插入损耗在2.79～4.31dB范围内,串扰在-20dB以下,消光比在12.5dB以上.     

直线变压器驱动源磁芯能量传递效率

 磁芯是直线变压器驱动源(LTD)的关键部件之一,起着初、次级能量传递和次级电压感应叠加的作用,磁芯的能量传递效率对LTD系统的效率、体积和重量影响显著。对LTD系统中影响磁芯能量传递效率的原因进行了初步的分析,并利用Pspice软件的非线性磁芯模型对磁芯的工作过程和损耗进行了模拟计算,最后对LTD磁芯的能量传递效率进行了初步的实验研究,在工作电压为20 kV时、脉宽约220 ns时,在2.8 Ω负载上获得了大于60%的能量传递效率。     

基于磁隔离驱动的亚微秒高压脉冲电源

为满足不可逆电穿孔对高压纳秒脉冲电源的需求,并且突破电源模块耐压的限制,提出了一款以正极性Marx为主电路、具有ns级前沿的高重复频率的亚微秒高压脉冲电源。该脉冲电源使用光纤传输信号,经过驱动芯片放大信号后,利用磁芯变压器传递驱动信号给MOSFET。磁芯变压器给电路提供了磁隔离,使驱动电路不会受高压输出的影响,提高了电路的耐压水平。驱动电路设计简单,所需元器件较少,可提供负压偏置,使开关管可靠关断,提高电路的抗电磁干扰能力,保障电路稳定运行。此电源由16级电路构成,实验表明:在10 kΩ纯阻性负载上,当输入电压为630 V时,即可得到10 kV的高压输出。其最小脉宽为300 ns,频率1 Hz～10 kHz可调。该脉冲电源结构紧凑,能够做到输出电压、脉宽、频率可调。研究了磁芯材料和匝数对驱动脉宽的影响。结果表明:匝比的增加会影响信号脉宽,在一定的条件下,单匝电感量的差异和磁芯材料的不同对信号脉宽的影响较小。     

Directed transport in quantum Hall bilayers

The pseudo-spin model for a double layer quantum Hall system with the total landau level filling factor ν=1 is discussed. In contrast to the “traditional” model where the interlayer voltage enters as a static magnetic field along pseudo-spin hard axis, taking into account the realistic experimental situation, in our model we interpret the influence of applied voltage as a source of additional relaxation process in the double layer system. We show that the Landau-Lifshitz equation for the considered pseudo-magnetic system well describes existing experimental data and reduces to the dc driven and damped sine-Gordon equation. As a result, the mentioned model predicts novel directed intra-layer transport phenomenon in the system. In particular, unidirectional intra-layer energy transport can be realized due to the motion of topological kinks induced by applied voltage. Experimentally this should be manifested as counter-propagating intra-layer inhomogeneous charge currents proportional to the interlayer voltage and total topological charge of the pseudo-spin system.     

Effect of the in-plane magnetic field on the recombination radiation spectrum of spatially-separated electron-hole layers

Changes in the recombination radiation spectrum of spatially-separated electron-hole layers has been studied under variation of the in-plane magnetic field and interlayer distance. It has been found that a change in the spectral position of the luminescence line in the low-field limit is proportional to the square of the magnetic field with the proportionality coefficient depending on the interlayer distance. The observed dependence has been shown to agree with the theoretical conceptions, according to which the line shift is quadratic in the magnetic field and interlayer distance and inversely proportional to the sum of the electron and hole masses. This total mass obtained in the experiment has been found to depend on the electric field that separates the layers and may substantially differ from the expected value.     

耐高压纳秒脉冲罗氏线圈的研制

针对ns级脉冲电流信号的测量，设计了一种带磁芯的新型自积分式罗氏线圈，具有信噪比高、动态范围广等优点。屏蔽盒开气隙防止涡流。屏蔽盒外层采用聚氨酯进行整体封装，聚氨酯层厚度大于1.5 mm，可耐受大于20 kV的冲击电压。采用高压方波发生器与Pearson4100线圈对罗氏线圈标定。罗氏线圈的参数为:灵敏度0.018 8 V/A，最高上升时间小于20 ns，方波脉宽300 ns，最大峰值电流300 A。     

Spin-filter tunneling in superconducting mesa structures with a ferromagnetic manganite interlayer

We have studied the current transport and magnetism in epitaxial hybrid superconducting mesa structures consisting of a cuprate superconductor and superconducting niobium with a manganite LaMnO₃ (LMO) interlayer. We have shown experimentally using magnetic resonance that the magnetization, magnetic anisotropy parameters, and transition temperature to the ferromagnetic state of the interlayer of the structures are analogous to those of an autonomous LMO film grown on a neodymium gallate substrate. The estimate of the barrier height obtained from the dependence of the characteristic resistance of mesa structures on the interlayer thickness has shown the barrier height variation with the thickness in the range of 5–30 mV. The temperature dependences of the conductivity of the mesa structure in the range between superconducting transition temperatures of the superconductors can be described in the theory taking into account the d-wave nature of the superconductivity for one of the electrodes and the spin-filtering of carriers passing through the tunnel interlayer. Spin-filtering is confirmed by the tunnel magnetoresistance and the high sensitivity of mesa structures to a weak external magnetic field in a voltage interval smaller than the gap of niobium.     

基于AD698的线性差动式位移传感器解码电路设计

线性差动式位移传感器(LVDT)由于其灵敏度高、线性度好、分辨率高、寿命长、可靠性高等优点,已广泛应用于机载测试系统中;为了设计出精度高,稳定性好,能够满足机载测试需求的LVDT传感器解码电路,分析了LVDT传感器磁芯位移与输出电压信号的关系,研究了AD698的内部解调原理,设计出了基于AD698的信号解码电路;该电路通过外围元器件产生传感器所需的激励信号,并对激励信号和传感器输出信号进行解调得到与传感器磁芯位移成正比的直流电压;最后通过实验验证该电路具有结构简单、稳定性高、精度高的优点,能够满足机载测试的要求,且该电路已经过高低温和振动试验,并成功应用于机载测试采集系统中。     

ITER轴向绝缘子结构设计与分析

用有限元法对ITER装置磁体系统的高性能氦气密复合材料绝缘子的结构设计进行电场分析和力学性能分析。分析结果表明,绝缘子能够承受耐电压56kV、耐气压4MPa、耐拉力2000N、耐弯矩1000Nm、耐扭矩100Nm的技术参数要求;同时热应力分析结果表明,与外力作用的影响相比,热应力是影响绝缘子性能的关键因素;绝缘子在拉力、弯矩和扭矩受力下发生变形的是金属部分,外力对绝缘部分的影响不大。     

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用有限元法对ITER装置磁体系统的高性能氦气密复合材料绝缘子的结构设计进行电场分析和力学性能分析。分析结果表明,绝缘子能够承受耐电压56kV、耐气压4MPa、耐拉力2000N、耐弯矩1000Nm、耐扭矩100Nm的技术参数要求;同时热应力分析结果表明,与外力作用的影响相比,热应力是影响绝缘子性能的关键因素;绝缘子在拉力、弯矩和扭矩受力下发生变形的是金属部分,外力对绝缘部分的影响不大。     

Carrier spin polarization in ferromagnet-semiconductor (Ga,Mn)As/GaAs structures

The effect of ferromagnetic layers on the spin polarization of holes and electrons in ferromagnet-semiconductor superlattices with a fixed Mn δ-layer thickness of 0.11 nm and different GaAs interlayer thicknesses varying in the range from 2.5 to 14.4 nm and a fixed number of periods (40) is studied by means of hot-electron photoluminescence (HPL). Here, our study of the HPL demonstrates that the holes in δ-layers of (Ga,Mn)As DMS occupy predominantly the Mn acceptor impurity band. The width of the impurity band decreases with the increase of the interlayer distance. We also found that an increase in the GaAs interlayer thickness softens the magnetic properties of the ferromagnetic layers as well as reduces the carrier polarization. It is demonstrated that the hole spin polarization in the DMS layers and spin polarization of electrons in nonmagnetic GaAs are proportional to the sample magnetization.     

The oscillatory galvanomagnetic size-effect in multilayered structures

Within the framework of the modified semi-classical Fuchs-Sondheimer model, we investigated theoretically the electrical resistivity of multilayered structures (MLS) consisting of alternating metallic layers (of different purity and different thicknesses) in a transverse magnetic field as functions of the ratio of the adjacent layer thicknesses and the magnetic field value. We have derived both a general formula (valid at arbitrary values of layer thicknesses) and asymptotic expressions that are valid when metallic layers are thick or thin compared with the electron mean free path. We found a non-monotonic behavior in the resistivity vs. the value of an applied magnetic field. As we demonstrated, this behavior is sensitive to the characteristics of the electron scattering in the interlayer interfaces in low magnetic fields. Moreover, the MLS resistivity oscillates in high magnetic fields with the field value (or with the layer thicknesses). The oscillation includes the harmonics that correspond both to the each layer thicknesses and the total thickness. The intensity of the oscillation is determined by the diffusive electron scattering in the interfaces, and the oscillation amplitude is proportional to the coefficient of the electron transmission through the interlayer interfaces. We have calculated numerically the resistivity in a wide range of fields and layer thicknesses at various values of the parameters of the interface and bulk electron scattering.