Bi(110)薄膜在NbSe_2衬底上的扫描隧道显微镜研究

二维拓扑绝缘体因其特殊的能带结构带来的新奇物理性质,成为近年来凝聚态物理的研究热点.尤其是在引入超导电性之后,二维拓扑绝缘体中可能存在马约拉纳费米子(Majorana fermion),因此在量子计算方面具有重大应用前景.在Bi(111)薄膜被证实为二维拓扑绝缘体之后, Bi(110)薄膜引起了广泛关注,然而其拓扑性质还存在争议.本文利用分子束外延技术在室温低生长速率环境下成功制备出了高质量的单晶Bi(110)薄膜.通过扫描隧道显微镜测量发现,薄膜以约8个原子层厚度为分界,从双层生长转变为单层生长模式.结合隧道谱测量发现,在NbSe_2衬底上生长的Bi(110)薄膜因为近邻效应而具有明显的超导性质,但并未显示出拓扑边缘态的存在.此外,对薄膜中特殊的量子阱态现象也进行了讨论.     

单层FeSe薄膜/氧化物界面高温超导

单层FeSe/SrTiO₃界面增强超导的发现为理解高温超导机理提供了一个新的途径,也为实现新的高温超导体开拓了新思路.本文通过在SrTiO₃（001）表面高温沉积Mg进而沉积单层FeSe薄膜,制备出了FeSe/MgO双层/SrTiO₃异质结.利用扫描隧道显微镜研究了异质结的电学及超导特性,观测到约14–15 meV的超导能隙,比体相FeSe超导能隙值增大了5–6倍,与K掺杂双层FeSe/SrTiO₃的超导能隙值相当.这一结果可理解为能带弯曲造成的界面电荷转移和界面处电声耦合共同作用导致的超导增强.FeSe/MgO界面是继FeSe/TiO₂之后的一个新界面超导体系,为研究界面高温超导机理提供了新载体.     

Selective formation of ultrathin PbSe on Ag(111)

Two-dimensional (2D) semiconductors, such as lead selenide (PbSe), locate at the key position of next-generation devices. However, the ultrathin PbSe is still rarely reported experimentally, particularly on metal substrates. Here, we report the ultrathin PbSe synthesized via sequential molecular beam epitaxy on Ag(111). The scanning tunneling microscopy is used to resolve the atomic structure and confirms the selective formation of ultrathin PbSe through the reaction between Ag₅Se₂ and Pb, as further evidenced by the theoretical calculation. It is also found that the increased accumulation of Pb leads to the improved quality of PbSe with larger and more uniform films. The detailed analysis demonstrates the bilayer structure of synthesized PbSe, which could be deemed to achieve the 2D limit. The differential conductance spectrum reveals a metallic feature of the PbSe film, indicating a certain interaction between PbSe and Ag(111). Moreover, the moiré pattern originated from the lattice mismatch between PbSe and Ag(111) is observed, and this moiré system provides the opportunity for studying physics under periodical modulation and for device applications. Our work illustrates a pathway to selectively synthesize ultrathin PbSe on metal surfaces and suggests a 2D experimental platform to explore PbSe-based opto-electronic and thermoelectric phenomena.     

Precisely controlling the twist angle of epitaxial MoS2/graphene heterostructure by AFM tip manipulation

Two-dimensional (2D) moiré materials have attracted a lot of attention and opened a new research frontier of twistronics due to their novel physical properties. Although great progress has been achieved, the inability to precisely and reproducibly manipulate the twist angle hinders the further development of twistronics. Here, we demonstrated an atomic force microscope (AFM) tip manipulation method to control the interlayer twist angle of epitaxial MoS₂/graphene heterostructure with an ultra-high accuracy better than 0.1°. Furthermore, conductive AFM and spectroscopic characterizations were conducted to show the effects of the twist angle on moiré pattern wavelength, phonons and excitons. Our work provides a technique to precisely control the twist angle of 2D moiré materials, enabling the possibility to establish the phase diagrams of moiré physics with twist angle.     

High-resolution electron microscopy study of Ni81Fe19 film with Co33Cr67 buffer layer

The anisotropic magnetoresistance (AMR) in permalloy Ni₈₁Fe₁₉ film deposited on a 1.2 nm Co₃₃Cr₆₇ buffer layer was significantly enhanced. The high-resolution electron microscopy was used to study the microstructure of Ni₈₁Fe₁₉ film with and without Co₃₃Cr₆₇ buffer layer. It was found that Co₃₃Cr₆₇ buffer layer can induce good (1 1 1) texture, while without Co₃₃Cr₆₇ buffer layer, Ni₈₁Fe₁₉ film show randomly oriented grain structure. The Δρ/ρ enhancement is attributed to the decrease in the resistivity ρ of the Ni₈₁Fe₁₉ film due to the formation of the large (1 1 1) textured grains in Ni₈₁Fe₁₉ film with Co₃₃Cr₆₇ buffer layer. However, the surface roughness of substrate may limit the (1 1 1) textured grain size and induce additional grain boundaries in Ni₈₁Fe₁₉ film with Co₃₃Cr₆₇ buffer layer, limit the enhancement of the AMR effect.     

Signatures of strong interlayer coupling in γ-InSe revealed by local differential conductivity

Interlayer coupling in layered semiconductors can significantly affect their optoelectronic properties. However, understanding the mechanisms behind the interlayer coupling at the atomic level is not straightforward. Here, we study modulations of the electronic structure induced by the interlayer coupling in the γ-phase of indium selenide (γ-InSe) using scanning probe techniques. We observe a strong dependence of the energy gap on the sample thickness and a small effective mass along the stacking direction, which are attributed to strong interlayer coupling. In addition, the moiré patterns observed in γ-InSe display a small band-gap variation and nearly constant local differential conductivity along the patterns. This suggests that modulation of the electronic structure induced by the moiré potential is smeared out, indicating the presence of a significant interlayer coupling. Our theoretical calculations confirm that the interlayer coupling in γ-InSe is not only of the van der Waals origin, but also exhibits some degree of hybridization between the layers. Strong interlayer coupling might play an important role in the performance of γ-InSe-based devices.     

GaSb基PECVD法制备SiO2薄膜的应力研究

为了实现在GaSb衬底上获得低应力的SiO₂薄膜,研究了等离子体增强化学气相沉积法（PECVD）在晶格失配较大的GaSb衬底上沉积SiO₂薄膜的应力情况。通过改变薄膜沉积时的工艺条件,如反应温度、射频功率、反应压强、气体流量比,并基于曲率法模型,对镀膜前后的曲率半径进行了实验测量,利用Stoney公式计算相关应力值并绘制应力变化曲线。详细讨论了PECVD工艺条件的改变对SiO₂薄膜应力所产生的影响。同时通过在Si衬底上沉积SiO₂薄膜,对比分析了导致薄膜应力产生的因素及变化过程。实验结果表明,在沉积温度为300℃、射频功率为20 W、腔体压强为90 Pa、气体流量比SiH₄/N₂O为125/70 cm³·min^-1的工艺参数下,PECVD法在GaSb衬底上沉积的SiO₂薄膜应力相对较小。     

2,7-二辛基[1]苯并噻吩并[3,2-b]苯并噻吩(C8-BTBT)与MoS_2界面的能级匹配与薄膜生长

结合紫外光电子能谱(UPS)、X射线光电子能谱(XPS)和原子力显微镜(AFM)等实验手段系统研究了C8-BTBT沉积在层状Mo S2基底上的界面能级匹配、薄膜生长和分子取向。研究发现C8-BTBT分子竖直生长在Mo S2上,生长过程中界面的真空能级(VL)、最高占据态轨道(HOMO)和电离能(IP)都出现了非常规的弯曲现象。这种能级弯曲行为可归因于直立分子从界面相到体相的转变过程中,其分子倾斜角(θ)存在一定的渐变,这种渐变会在沿表面法线方向诱导出一系列的层间电偶极,最终导致能级的弯曲。同时θ的变化也会改变薄膜的表面极化强度,引起IP的逐渐减小。能级的弯曲在界面处形成类P-N结的效应会对C8-BTBT基电子器件的性能有很大的影响。     

Characterization of the N-polar GaN film grown on C-plane sapphire and misoriented C-plane sapphire substrates by MOCVD

Gallium nitride (GaN) thin film of the nitrogen polarity (N-polar) was grown on C-plane sapphire and misoriented C-plane sapphire substrates respectively by metal-organic chemical vapor deposition (MOCVD). The misorientation angle is off-axis from C-plane toward M-plane of the substrates, and the angle is 2° and 4° respectively. The nitrogen polarity was confirmed by examining the images of the scanning electron microscope before and after the wet etching in potassium hydroxide (KOH) solution. The morphology was studied by the optical microscope and atomic force microscope. The crystalline quality was characterized by the x-ray diffraction. The lateral coherence length, the tilt angle, the vertical coherence length, and the vertical lattice-strain were acquired using the pseudo-Voigt function to fit the x-ray diffraction curves and then calculating with four empirical formulae. The lateral coherence length increases with the misorientation angle, because higher step density and shorter distance between adjacent steps can lead to larger lateral coherence length. The tilt angle increases with the misorientation angle, which means that the misoriented substrate can degrade the identity of crystal orientation of the N-polar GaN film. The vertical lattice-strain decreases with the misorientation angle. The vertical coherence length does not change a lot as the misorientation angle increases and this value of all samples is close to the nominal thickness of the N-polar GaN layer. This study helps to understand the influence of the misorientation angle of misoriented C-plane sapphire on the morphology, the crystalline quality, and the microstructure of N-polar GaN films.     

Robustness of the unidirectional stripe order in the kagome superconductor CsV3Sb5

V-based kagome materials AV₃Sb₅ (A=K, Rb, Cs) have attracted much attention due to their novel properties such as unconventional superconductivity, giant anomalous Hall effect, charge density wave (CDW) and pair density wave. Except for the 2a₀×2a₀ CDW (charge density wave with in-plane 2×2 superlattice modulation) in AV₃Sb₅, an additional 1×4 (4a₀) unidirectional stripe order has been observed at the Sb surface of RbV₃Sb₅ and CsV₃Sb₅. However, the stability and electronic nature of the 4a₀ stripe order remain controversial and unclear. Here, by using low-temperature scanning tunneling microscopy/spectroscopy (STM/S), we systematically study the 4a₀ stripe order on the Sb-terminated surface of CsV₃Sb₅. We find that the 4a₀ stripe order is visible in a large energy range. The STM images with positive and negative bias show contrast inversion, which is the hallmark for the Peierls-type CDW. In addition, below the critical temperature about 60 K, the 4a₀ stripe order keeps unaffected against the topmost Cs atoms, point defects, step edges and magnetic field up to 8 T. Our results provide experimental evidences on the existence of unidirectional CDW in CsV₃Sb₅.     

YMnO_3薄膜的铁电行为及其纳米尺度铁电畴的研究

六方YMnO_3是一种特殊的多铁性材料,因其具有介电常数低、单一极化轴、无挥发性元素等特点,在磁电领域具有独特的优势,但目前关于YMnO_3薄膜的铁电性特别是畴结构的研究相对较少.本文采用溶胶-凝胶法在Si(100)基片上制备了多铁性YMnO_3薄膜,利用掠入射X-射线衍射、原子力显微镜对薄膜的结构及表面形貌进行了分析,用压力显微镜(PFM)技术研究了纳米尺度畴结构及微区电滞行为,并通过I-V,P-E曲线进一步研究了薄膜的漏电流和宏观电滞行为.结果表明,该薄膜为六方钙钛矿结构,YMnO_3晶粒大小均匀并且结晶性较好,薄膜表面粗糙度为7.209 nm.PFM图显示出清晰的电畴结构,结合典型的微区振幅蝴蝶曲线和相位电滞回线,证实该YMnO_3薄膜具有较好的铁电性.由于受内建电场的作用,振幅曲线和相位曲线都向正向偏移,表现出非对称特征.该薄膜的漏电流密度低于10~(-6)A·cm~(-2),因而其电滞回线基本能够达到饱和.     

(Ce0.8Sm0.2O2-δ/Y2O3:ZrO2)N超晶格电解质薄膜的制备及表征

采用脉冲激光沉积技术(PLD), 在MgO单晶基底上, 依次沉积氧化钐掺杂的氧化铈(Ce_0.8Sm_0.2O_2-δ, SDC)和钇稳定氧化锆(8 mol%Y₂O₃:ZrO₂, YSZ)制备了五种(SDC/YSZ)_N (N=3, 5, 10, 20, 30) 超晶格电解质薄膜. 利用X射线衍射(XRD)、高分辨透射电子显微镜(HR-TEM)和交流阻抗对其形貌、相结构和电学性能进行了表征. 结果显示, (SDC/YSZ)_N超晶格电解质薄膜之间形成了明显的界面和较好的超晶格结构; 薄膜表面颗粒生长均匀、致密、平滑, 在薄膜的界面处没有元素相互扩散也未出现裂纹, 外延生长良好; 电导率随着(SDC/YSZ)_N超晶格电解质界面数的增加而增加, 而活化能则随之减少, 是较为理想的低温固体氧化物燃料电池电解质.     

Incommensurate modulations in Ba2TiSi2O8, Sr2TiSi2O8, and Ba2TiGe2O8

Incommensurate modulations in Ba₂TiSi₂O₈, Sr₂TiSi₂O₈, and Ba₂TiGe₂O₈ are compared based on their corresponding electron diffraction patterns. The dependence of the modulations on chemical composition provides a suitable model system for the investigation of incommensurations in framework structures using high-resolution transmission electron microscopy (HRTEM). A widening of quantitative HRTEM utilising the concept of rigid units is proposed allowing for a determination of atomistic displacements responsible for the formation of incommensurately modulated structures.     

Inducing superconductivity and structural transformations by fluorination of reduced YBCO

Bulk superconductivity with T_c up to 94 K has been induced by fluorination of non-superconducting YBa₂Cu₃O_6.11 using XeF₂ as a fluorination agent. Strong changes on X-ray patterns were found after fluorination of reduced YBCO. High resolution electron microscopy of superconducting samples showed the presence of a new phase with c ≈ 13 Å which exists as noticeable areas included within a matrix of the 123 structure or which occurs as isolated defects with a limited extension. All fluorinated compounds exhibited a strong disorder along the c-direction resulting in a ‘loss’ of c-parameter on X-ray patterns. The present results demonstrate that fluorine indeed enters the YBCO structure with a significant structural rearrangement for the high level of fluorination. The structure of the fully fluorinated YBa₂Cu₃O₆F₂ phase, possibly responsible for superconductivity, has been deduced from high resolution electron microscopy.     

Moiré flat bands of twisted few-layer graphite

We report that the twisted few layer graphite (tFL-graphite) is a new family of moiré heterostructures (MHSs), which has richer and highly tunable moiré flat band structures entirely distinct from all the known MHSs. A tFL-graphite is composed of two few-layer graphite (Bernal stacked multilayer graphene), which are stacked on each other with a small twisted angle. The moiré band structure of the tFL-graphite strongly depends on the layer number of its composed two van der Waals layers. Near the magic angle, a tFL-graphite always has two nearly flat bands coexisting with a few pairs of narrowed dispersive (parabolic or linear) bands at the Fermi level, thus, enhances the DOS at E_F . This coexistence property may also enhance the possible superconductivity as been demonstrated in other multiband superconductivity systems. Therefore, we expect strong multiband correlation effects in tFL-graphite. Meanwhile, a proper perpendicular electric field can induce several isolated nearly flat bands with nonzero valley Chern number in some simple tFL-graphites, indicating that tFL-graphite is also a novel topological flat band system.     

Elemental steps in the growth of thin β-Ga2O3 films on CoGa(1 0 0)

The oxidation of CoGa(1 0 0) at 700 K was studied by means of high resolution electron energy loss spectroscopy (EELS), scanning tunneling microscopy, low energy electron diffraction and Auger electron spectroscopy (AES). At 700 K, thin well-ordered β-Ga₂O₃ films grow on CoGa(1 0 0). The EEL spectrum of the Ga-oxide films exhibit Fuchs–Kliewer phonons at 305, 455, 645, and 785 cm⁻¹. For low oxygen exposure (<0.2 L), the growth of oxide-islands starts at step edges and on defects. The oxide films have the shape of long, rectangular islands and are oriented in the [1 0 0] and [0 1 0] directions of the substrate. For higher oxygen exposure, islands of β-Ga₂O₃ are found also on the terraces. After an exposure of 200 L O₂ at 700 K, the CoGa(1 0 0) surface is homogeneously covered with a thin film of β-Ga₂O₃.     

Phase transition-induced superstructures of β-Sn films with atomic-scale thickness

The ultrathin β-Sn(001) films have attracted tremendous attention owing to its topological superconductivity(TSC),which hosts Majorana bound state(MBSs) for quantum computation.Recently,β-Sn(001) thin films have been successfully fabricated via phase transition engineering.However,the understanding of structural phase transition of β-Sn(001)thin films is still elusive.Here,we report the direct growth of ultrathin β-Sn(001) films epitaxially on the highly oriented pyrolytic graphite(HOPG) substrate and the characterization of intricate structural-transition-induced superstructures.The morphology was obtained by using atomic force microscopy(AFM) and low-temperature scanning tunneling microscopy(STM),indicating a structure-related bilayer-by-bilayer growth mode.The ultrathin β-Sn film was made of multiple domains with various superstructures.Both high-symmetric and distorted superstructures were observed in the atomic-resolution STM images of these domains.The formation mechanism of these superstructures was further discussed based on the structural phase transition of β to α-Sn at the atomic-scale thickness.Our work not only brings a deep understanding of the structural phase transition of Sn film at the two-dimensional limit,but also paves a way to investigate their structure-sensitive topological properties.     

ZnO外延膜与蓝宝石衬底的取向偏差及其弯曲变形

采用常压MOCVD方法在Al2O3(00．1)衬底上生长出了高质量ZnO单晶薄膜。由ZnO(00．2)面和Al2O3(00．6)面及ZnO(10．2)面和Al2O3(11．6)面X射线双晶(w／2θ衍射曲线的相对峰位,得到ZnO外延膜的晶格常数及外延层和衬底间的取向差异角。结果表明外延层和衬底在应力作用下产生了取向差和晶格畸变,并且取向倾斜方向与衬底的切割倾角方向一致;高温直接生长的样品的取向差比有低温缓冲层样品更大,晶格畸变也更严重。高温直接生长的样品弯曲半径小而应力更大;实验测量的应力值和理论计算的热应力值之间存在差异,原因主要是晶格失配应力的存在。有缓冲层的样品由于能更好地弛豫晶格失配引入的应力,热应力所占整个残余应力的比例相对更大。     

Collective and plastic vortex motion probed by STM

The motion of flux line lattices (VL) in various single crystals of NbSe₂ has been observed using fast scanning tunneling microscopy. In crystals with intrinsic weak point disorder the VL creeps coherently as a large bundle along one of the principal axes of the VL. However, we observe striking and for the creep regime unanticipated velocity modulations in the direction of motion, related to the VL periodicity, i.e. with the “washboard” frequency. In the transverse direction the fluctuations of the center-of-mass displacement are random. In crystals with strong line disorder (correlated pinning) caused by columnar defects due to swift ion irradiation collective pinning is observed in fields up to almost double the dose-equivalent field Bφ while interesting plastic flow patterns are detected at 2Bφ.     

重费米子超导与竞争序

与其他非常规超导系列相比, 重费米子超导体往往具有丰富多样的竞争序, 超导与各种竞争序相伴而生, 电子配对与反铁磁涨落、铁磁涨落、价态涨落、电四极矩涨落等量子临界涨落密切相关, 扩充了非常规超导的研究内容. 重费米子材料中的f电子往往同时参与超导与各种竞争序的形成, 表现出局域与巡游的二重性. 重费米子二流体理论为理解重费米子超导与竞争序的关系提供了新的思路.