Thin SiO2 films on GaAs substrates

The formation of thin dielectric SiO₂ films on n-type GaAs substrates and obtained results on the investigation of their physical and chemical parameters are described. The SiO₂ films are produced by low-temperature deposition of tetraethoxisilane in the continuous flow system with argon as a carrier gas. Some of the technological aspects of this preparation (as the growth conditions and proper apparatus) are discussed in great detail. For improvement of some typical parameters (infrared spectra, etch rate and permitivity) a suitable thermal treatment is recommended. From the results we have achieved, the potential possibilities for construction of various types of electronic devices are also proposed.The authors wish to thank Ing. I.Srb for infrared spectra measurements. The technical assistance of Mrs. O.Janouková is also greatly appreciated.     

GaAs/SiO_2超晶格的制备和Raman光谱研究

我们采用射频磁控溅射方法在 p- Si衬底上成功地制备出四周期的非晶 Ga As/Si O2超晶格 ,并取得其高分辨率电镜像。以 80 0℃快速退火方法使超晶格中非晶的 Ga As层局部晶化 ,利用 Raman散射谱研究了其结构变化。     

GaAs/SiO2纳米晶镶嵌薄膜的拉曼光谱与吸收光谱研究

采用射频磁控共溅射与高真空退火相结合的方法,分别在单晶硅片和光学石英玻璃片上制备了ＧａＡｓ／ＳｉＯ２纳米晶镶嵌薄膜样品。激光拉曼光谱的测量结果表明,退火态样品（４００℃,６０ｍｉｎ）的拉曼光谱特征峰呈现宽化和红移,红移量为９．５ｃｍ＾－１,对应薄膜中ＧａＡｓ纳米晶粒平均粒径约为３ｎｍ。样品的室浊吸收光谱测量结果表明,由于受量子限域效应的主导作用,与ＧａＡｓ块状单晶相比,样品光学吸收边呈现出明显的蓝     

氧等离子体处理对GaAs表面单层自组装SiO2纳米球薄膜的影响

二维纳米阵列结构因其重要的光学性能被广泛应用于各类光电子器件。本文对自组装单层SiO2纳米球掩模刻蚀法制备GaAs纳米柱二维阵列结构的关键工艺技术进行了研究。采用旋涂法在GaAs表面制备自组装单层SiO2纳米球,重点研究了GaAs表面氧等离子体亲水处理工艺对纳米球排列特性的影响,获得最佳工艺条件为功率配比100 W+80 W、腔室压力4 Pa、氧气流量20 mL/min、处理时间1200 s,并最终得到排列紧密的大面积单层纳米球薄膜。以单层纳米球为掩模,采用感应耦合等离子体刻蚀技术在GaAs表面制备了纳米柱阵列并测试了其表面光反射谱。测试结果表明,GaAs纳米柱阵列在特定波段的反射率降低至5%,远低于表面无纳米结构的薄膜材料表面高达40%的光反射。分析表明纳米柱可以激发米氏散射共振效应,从而有效降低反射率并提升光吸收。     

射频磁控共溅射GaAs/SiO2纳米颗粒镶嵌薄膜的光学性质

应用射频磁控共溅射方法和真空退火方法制备了GaAsSiO2纳米颗粒镶嵌薄膜.X射线衍射实验结果表明,经高温退火的薄膜中形成了面心立方闪锌矿结构的GaAs纳米晶粒,晶粒平均直径为1.5—3.2nm.吸收光谱展示了由于强量子限域引起的1.5—2eV的吸收边蓝移.室温光致荧光(PL)光谱显示了电子重空穴激子与电子劈裂空穴激子的近紫外和紫外双PL谱峰以及深俘获态的PL谱峰.对实验吸收边蓝移量与有效质量模型的蓝移量的悬殊差别、俘获态PL谱的形成以及PL谱线的特征作了解释.应用激光Z扫描技术测量了退火温度为500℃的复合膜在非共振条件下的光学非线性,结果表明,复合膜的非线性折射率系数和非线性吸收系数都比块材GaAs相应的系数增大了5个数量级.光学非线性系数增大主要起因于强量子限域效应 关键词： 射频磁控共溅射 GaAsSiO2纳米颗粒镶嵌薄膜 光谱 激光Z扫描     

SiO2/Ge:SiO2/SiO2夹层结构红外光发射的起源

我们借助傅立叶变换红外光谱（FT－IR）以及光致激发谱（PLE）,研究SiO2/Ge:SiO2/SiO2夹层结构红外光发射的起源。谱分析表明,该红外光发射并非起源于纳米锗、硅的量子限制效应以及锗、硅的中性氧空位,而与锗的氧化物紧密相关。PLE的结果证实它们来源于GeO色心TⅡ‘→S0的光学跃迁,给出的GeO电子态模型描述了载流子激发和复合的过程。     

Migration-coalescence of Nanoparticles During Deposition of Au,Ag, Cu,and GaAs on Amorphous SiO2

Nanoparticles formed during the initial period of film growth can migrate, coalesce, and may also melt. Nanoparticles of Au, Ag, Cu, and GaAs ranging from 1 to 15nm in diameter were sputter-deposited on amorphous SiO₂ (a-SiO₂). Transmission electron microscopy was used to analyze the time-dependent change of the dispersion of particles on a thin film. The number density of nanoparticles was nearly constant during the deposition of Ag. For Au, Cu, and GaAs, however, the number density decreased with time during the early deposition period. For example, for Au the number density decreased from 2.8×10¹⁶m^–2 (surface coverage ratio of 0.08) to 1.8×10¹⁶m^–2 (surface coverage ratio of 0.14). The surface coverage increased because the particle size increased as the number density decreased. This decrease suggests that migration followed by coalescence occurred. For Au, although we found evidence of migration of 2-nm particles at 500°C, the migration rate was too slow to account for the results from the deposition experiments. These observations indicate an autocatalytic mechanism that migration followed by coalescence liberates energy by the formation of chemical bonds, heats the coalesced particles, and enhances further migration. The strong dependence of the structure of nanoparticle dispersions on the deposition rate is a direct consequence of the deposition mechanism, which is a nonlinear, kinetically-controlled process.     

Luminescence of polymorphous SiO2

The luminescence of self-trapped exciton (STE) was found and systematically studied in tetrahedron structured silica crystals (α-quartz, coesite, cristobalite) and glass. In octahedron structured stishovite only host material defect luminescence was observed. It strongly resembles luminescence of oxygen deficient silica glass and γ or neutron irradiated α-quartz. The energetic yield of STE luminescence for α-quartz and coesite is about 20% of absorbed energy and about 5(7)% for cristobalite. Two types of STE were found in α-quartz. Two overlapping bands of STEs are located at 2.5–2.7 eV. The model of STE is proposed as Si–O bond rupture, relaxation of created non-bridging oxygen (NBO) with foundation of a bond with bridging oxygen (BO) on opposite side of c or x,y channel. The strength of this bond is responsible for thermal stability of STE. Similar model of STE was ascribed for coesite and cristobalite with difference related to different structure. STE of Silica glass is strongly affected by disordered structure.     

SiO2干凝胶光致发光性质的研究

以硅酸酯Si(OC2H5)4(TEOS)和H2N(CH2)3Si(OC2H5)3(APS)为主要原料,在不同的条件下(催化剂、热处理、高分子添加剂)通过溶胶-凝胶法制备了一系列不同组成的SiO2干凝胶,并通过发光光谱对所得的干凝胶进行了表征.在长波365nm紫外光激发下,干凝胶样品都显示出较强的蓝光发射,但其发光波长和发光忖强度随着组成和处理条件的不同而有明显的差异.APS与有机酸(醋酸)和无机酸(盐酸、硝酸、硫酸)所得SiO2干凝胶的结果为IHAc(λmax=432nm)＞JHNO3(λmax=441nm)≈IH2SO4(λmax=426nm)>IHCI(λmax=442nm),并且在APS与HCl作用所得的干凝胶样品中,明显存在两种发光中心(其发射峰值波长分别位于442nm和487nm,相应的激发波长分别位于365nm和273nm).一定量的TEOS与APS相混合并与HAc作用不仅有利于干凝胶样品的迅速形成,而且有利于提高其发光强度:当R(APS/TEOS+TEOS摩尔比)=0.5～0.7时,样品发光较强;在0.5摩尔APS+0.5摩尔TEOS与3摩尔HAc的反应过程中加入高分子添加剂聚乙二醇(PEG5000、PE10000),所得样品的发光强度先随着PEG的加入量的增加而变强,然后随着PEG的加入量的增加而变弱,PEG5000和PEG10000的最佳掺杂量分别为0.8g和0.6g.在温度20～200℃的范围内,干凝胶样品的发光强度随着热处理温度的升高而增强,同时真空中处理样品的发光强度大于空气中处理样品的发光强度.这表明干凝胶样品的发光和氧缺陷及碳杂质有关.     

SiO2的赝晶化及AIN/SiO2纳米多层膜的超硬效应

采用反应磁控溅射法制备了一系列不同SiO2 层厚度的A1N/SiO2 纳米多层膜,利用X射线衍射仪、高分辨透射电子显微镜和微力学探针表征了多层膜的微结构和力学性能,研究了SiO2 层在多层膜中的晶化现象及其对多层膜生长方式及力学性能的影响.结果表明,由于受AIN六方晶体结构的模板作用,溅射条件下以非晶态存在的SiO2层在其厚度小于0.6 nm时被强制晶化为与AlN相同的六方结构赝晶体并与AlN形成共格外延生长.由于不同模量的两调制层存在晶格错配度,多层膜中产生了拉、压交变的应力场,使得多层膜产生硬度升高的超硬效应.SiO2随层厚的进一步增加又转变为以非晶态生长,多层膜的外延生长结构受到破坏,其硬度也随之降低.     

Effect of λ/2 SiO_2 overcoat on the laser damage of HfO_2/SiO_2 high-reflector coatings

The effect of λ/2 SiO2 overcoat on the laser damage characteristics of HfO2/SiO2 high-reflector (HR) coatings is investigated with 1-on-l and N-on-1 laser damage test methods. The laser damage surface of 1-on-l is analyzed by a step analyzer. The surface morphologies show that laser damage makes the coating damaged area protrudent and rough for HR coating without λ/2 silica overcoat, but concave and smooth for HR coating with A/2 silica overcoat. The result of 10-on-l multi-pulse irradiation on the same point of the coating shows that there is an energy density stage on the damage curve. If the laser energy density is within the range of the stage, HfO2/SiO2 HR coatings with λ/2 silica overcoat will not be damaged more than 2 times for multi-shots, and the surface damages are very slight so that there is no impact on the coating performance. Another interesting result is that the energy density stage extends from the damage threshold to the point of about 3 times of threshold, which is similar to the     

Paramagnetic Chromium Centers in Y2SiO5 and Sc2SiO5 Crystals

Physics of the Solid State - The EPR spectrum of yttrium and scandium silicate single crystals doped with chromium has been studied at various frequencies. Y2SiO5 has one triclinic Cr3+ center,...     

Fabrication of quantum wires by selective intermixing induced in GaAs/AlGaAs quantum well heterostructures by SiO2 capping and subsequent annealing

Results are presented demonstrating that selective intermixing of GaAs/AlGaAs quantum well heterostructures by SiO₂ capping and subsequent annealing can be spatially localized with a length scale compatible with the observation of lateral quantum confinement effects. Patterning of a 400 nm-thick SiO₂ encapsulation layer deposited by rapid thermal chemical vapor deposition into arrays of wires was performed using high resolution electron beam lithography and subsequent reactive ion etching. After high temperature (850°C) annealing, photoluminescence experiments indicate the creation of double barrier quantum wires when small trenches (< 100 nm) are etched in the SiO₂ film at a period greater than 800 nm. Signatures of the formation of one-dimensional subbands are observed both in photoluminescence excitation spectroscopy and linear polarization anisotropy analysis. A mechanism involving the ability of the stress field generated during annealing at the SiO₂ film edges to pilot the diffusion of the excess gallium vacancies which are responsible for the enhanced interdiffusion under SiO₂ is suggested to account for the high lateral selectivity achievable with this novel process.     

SiO_2胶体晶体自组装技术

介绍了垂直沉降法和旋涂法制备SiO2胶体晶体,并对两种方法制备的胶体晶体在宏观形貌、微观结构及光子带隙性质进行了比较。采用改进的Stober法在乙醇介质中合成粒径不同、单分散性较好的SiO2微球,用垂直沉积法和旋涂法制备出有序性较好的密排结构的SiO2胶体晶体。宏观照片表明,用旋涂法制备的SiO2胶体晶体经白光照射出现的光柱呈6次对称,而垂直沉降法制备的胶体晶体表面出现条纹。SEM分析表明,选用不同溶剂在同等旋涂工艺下制备SiO2胶体晶体,用乙醇和乙二醇混合溶液作溶剂制备出的SiO2胶体晶体质量最好。透射光谱表明,垂直沉降法所制备的胶体晶体在(111)方向具有明显的光子带隙性质,而旋涂法制备的胶体晶体则不明显。     

二氧化硅气凝胶微球制备技术

 采用悬浊液成球技术制备低密度二氧化硅气凝胶微球，介绍了TEOS的水解、缩聚过程，主要论述了悬浊液成球技术、密度匹配技术、老化时间对微球性能，特别是收缩对微球密度的影响。实验制备了密度分别为70,100,150,200mg/cm³四种小球，结果表明：熟化时间取6d，制得的微球直径为0.1~2mm,密度为50~500mg/cm³,非球形参数为1.8%。     

Atomic mixing of Ni2O3/SiO2, NiO/SiO2, and Ni/SiO2 interfaces induced by swift heavy ion irradiation

We have investigated the interface mixing of Ni₂O₃/SiO₂, NiO/SiO₂, and Ni/SiO₂ induced by the irradiation with Ar, Kr and Xe ions of energies ranging from 90 MeV to 260 MeV. Since these energies are in the electronic stopping regime, atomic transport processes will not be directly initiated by elastic ion–target collisions, but need to be excited by secondary processes like electron–phonon coupling or Coulomb explosion. Nevertheless, we have observed a strong mixing effect in the ceramic systems if the electronic energy loss exceeds a certain threshold value. Estimation of an effective diffusion constant indicates that diffusion takes place in the molten ion track. In contrast to the ceramics, the metallic Ni layer is still insensitive even for the highest electronic stopping power used (S_e=28 keV/nm) and does not exhibit mixing with its SiO₂ substrate. In addition, NiO/SiO₂ and Ni/SiO₂ were irradiated in the nuclear stopping regime with 600 keV Kr and 900 keV Xe–ions. Here the intermixing effect is in good agreement with the assumption of ballistic atomic transport. Received: 5 February 2002 / Accepted: 11 February 2002 / Published online: 3 May 2002 RID="*" ID="*"Corresponding author. Fax: +49-711/685-3866, E-mail: bolse@ifs.physik.uni-stuttgart.de     

(nc-Si/SiO2)/SiO2多层量子点结构的激子能级

采用球型量子点模型,应用有效质量近似理论,研究了(nc-Si/SiO2)/SiO2多层量子点结构的激子能级和波函数.结果表明,有限深势阱模型的引入更符合实际更加准确.无论在无限深或有限深势阱下,激子质心运动部分基态能量随最子点半径的减小而急剧增大.对于相同的量子点半径α,无限深势阱下的质心部分能量总比有限深势阱高,且二者的差距随α的减小小而增大.     

单层SiO2物理膜与化学膜激光损伤机理的对比研究

采用离子束溅射沉积技术和溶胶-凝胶技术在K9基片上镀制了厚度相近的SiO2单层介质膜,用表面热透镜技术对两类膜层分别进行了热吸收及实时动态热畸变实验测试,结合散射光阈值测试及实验前后膜层的显微观测,对相同基底、相同膜层材料而采用不同方法镀制的光学膜层,发现化学膜的强激光损伤阈值远高于相应物理膜;从热力学响应及膜层特性差异的角度揭示了化学膜层的强激光损伤阈值远高于相应物理膜层的微观机理,即物理膜具有高吸收下的致密膜层快传导的基底热冲击效应,而化学膜则有低吸收下的疏松空隙填充慢传导的延缓效应,大量的实验数据及现象都证实了这一结论.     

PdCl_2/SiO_2和Pd-B/SiO_2非晶态合金催化剂的Raman光谱表征

采用共焦显微Ｒａｍａｎ光谱和Ｘ－射线衍射方法表征了负载型ＰｄＣｌ２／ＳｉＯ２和Ｐｄ－Ｂ／ＳｉＯ２非晶态合金催化剂的结构。结果表明ＰｄＣｌ２分散在ＳｉＯ２载体上后,与载体表面的相互作用使其在室温时即发生β→α构型转变。Ｐｄ－Ｂ／ＳｉＯ２非晶态合金的Ｒａｍａｎ光谱在３００－５００ｃｍ－１区域内呈现一大的弥散峰。与无负载Ｐｄ－Ｂ非晶态合金比较初步认定该弥散峰与Ｐｄ－Ｂ键振动有关,温度升高Ｐｄ－Ｂ／ＳｉＯ２催化活性下降,其主要原因为Ｐｄ－Ｂ／ＳｉＯ２非晶态合金在高温下逐渐晶化为Ｐｄ金属所致。ＰｄＣｌ２与ＳｉＯ２载体表面的相互作用使其具有较高的分散性,由此还原制备的Ｐｄ－Ｂ／ＳｉＯ２非晶态合金较之无负载Ｐｄ－Ｂ非晶态合金更加微细化,因而具有更大的活性比表面