非晶态合金的电阻应变系数

本文系统地研究了Pd-,Cu-,Ni-和Fe-基非晶态合金在拉伸过程中的电阻变化以及成分、冷变形和热处理对电阻应变系数k的影响。电阻随应变增大而升高,k为正。合金电阻应变系数总是低于纯组元。硬态试样的电阻应变系数比淬火态的高,比退火态的更高。应用推广的Ziman电阻率理论讨论了非晶态合金电阻应变系数的物理本质及其影响因素。 关键词：     

Mn的价态对La0.8Ba0.2MnO3电磁性能的影响

在2-390K温度之间研究了La0.8Ba0.2MnO3的磁矩、磁电阻与温度的关系.发现以不同价态的Mn元素引入得到的La0.8Ba0.2MnO3,性能虽然都存在金属-绝缘体转变,以及在磁场作用下居里温度附近电阻率变化非常显著的特点,但是价态对磁性转变温度TC,金属-绝缘体转变温度Tmi,以及磁电阻极大值温度TMR的影响都非常显著.三种价态相比较,使用二价Mn的电阻率最低以及磁性转变温度更接近室温.认为影响材料性能的主要因素是材料制备时引进的Mn元素的价态,由于原料价态的不同而形成的氧空位浓度变化,进而影响了Mn4+/Mn3+的比.     

氢致LaMg2Ni合金薄膜的光电性能变化

采用电子束蒸发法沉积LaNi/Mg多层膜,再于350℃真空退火合金化的方法制备了厚度为375nm的LaMg₂Ni合金薄膜.在吸、放氢过程中,该合金薄膜能够在高反射的金属态和透明的半导体态之间可逆地转变.在可见光波长范围内的平均透射率和电阻率在反射态和透明态之间的对比度大于10⁴.利用扫描电子显微镜和原子力显微镜观察了吸放氢前后薄膜的表面及剖面形貌.结果表明,在氢化过程中薄膜表面的平整性降低且不可恢复,是脱氢态中出现低反射现象的主要原因. 关键词： 薄膜 光电性能 氢 形貌     

单晶CeB_6发射性能及磁电阻各向异性研究

采用X射线劳厄定向法对单晶CeB_6的(110),(111),(210)和(310)晶面进行了定向.系统研究了不同晶面热发射性能及磁场对电阻率的影响规律.结果表明,当阴极温度为1873 K时(110),(111),(210)和(310)晶面最大发射电流密度分别为38.4,11.54,50.4和20.8 A/cm~2,表现出了发射性能的"各向异性".RichardsonDushman公式计算逸出功结果表明,上述晶面中(210)晶面具有最低的逸出功,为2.4 eV.从实际应用来看,该晶面有望替代商业化的钨灯丝成为新一代的场发射阴极材料.磁电阻率测量结果显示,当晶体从[001]方向旋转至[011]方向时电阻率从73μ?·cm变化至69μ?·cm,表明电阻率在磁场中沿不同方向同样具有"各向异性"的特点.     

Mn-Cu系高阻尼合金的凝固组织控制及阻尼特性的改善

Mn-Cu系阻尼合金兼有较高的阻尼特性和良好的力学性质,因而具有较大的实用前景.这类合金通常经过铸造,塑性加工和热处理来获得要求的性能和组织.加工后的Mn-Cu合金存在一个特定温度,在此温度以上合金的阻尼性能将会消失,因而影响了合金的在较高温度下的使用.该温度和合金的Mn含量有关,然而提高合金的Mn含量有会降低合金的加工性及力学性能.一般Mn-Cu合金的热处理都是利用400℃附近的时效来获得相分解后的局部高Mn组织.但是目前的时效处理后的Mn-Cu阻尼合金的最高使用温度只在80℃以下.为解决Mn-Cu阻尼合金使用温度的局限性,本研究选用凝固过程控制的方法在铸造组织中来获得较大幅度的Mn含量分布,从而在Mn-Cu合金得到较高的高阻尼特性温度.本工作利用铸型温度控制的方法,将M2052(Mn-20Cu-5Ni-2Fe)合金在250～0.1 K/s冷却速度范围内控制凝固.随凝固冷却速度的降低在合金的铸态组织中观察到二次枝晶间距和晶粒尺寸的明显增大.同时还发现缓冷凝固的合金的成分比快冷凝固有较大的分布幅度.铸态下的合金阻尼性能评价也证实了凝固冷却速度对合金的凝固组织有很大的影响.尽管铸态组织的合金的高温阻尼性能并没有很大的改善,然而通过对铸态组织实施时效处理后发现缓冷凝固合金的高温阻尼性能有很大的改善.凝固冷却速度对时效处理后合金的阻尼性能有明显的影响.实验结果表明0.1 K/s的冷却速度下缓慢凝固的合金在时效处理后高阻尼特性可持续高达120℃.     

氧氩比对钴掺杂氧化锌薄膜光电性能的影响

以氧化锌陶瓷靶和金属钴靶为靶材,利用磁控共溅射方法制备钴掺杂氧化锌(Co-ZnO)薄膜。研究了氧氩比对薄膜的结构、光学和电学性能的影响。结果表明:薄膜具有类似于ZnO的六方纤锌矿结构,并沿c轴择优生长;当氧氩比为2:8时,薄膜具有较好的纳米晶粒和表面结构,其霍尔迁移率为2.188×104cm2/V·s,最小电阻率为1.326×104Ω·cm,其薄膜透光率最高,且在紫外区有一个相对较强的发射峰。     

氢致LaMg2Ni合金薄膜的光电性能变化

采用电子束蒸发法沉积LaNi/Mg多层膜,再于350℃真空退火合金化的方法制备了厚度为375nm的LaMg2Ni合金薄膜.在吸、放氢过程中,该合金薄膜能够在高反射的金属态和透明的半导体态之间可逆地转变.在可见光波长范围内的平均透射率和电阻率在反射态和透明态之间的对比度大于104.利用扫描电子显微镜和原子力显微镜观察了吸放氢前后薄膜的表面及剖面形貌.结果表明,在氢化过程中薄膜表面的平整性降低且不可恢复,是脱氢态中出现低反射现象的主要原因.     

BESⅢ μ探测器阻性板模型室的性能研究

对基于酚醛树脂的阻性板室(RPC)进行研究. 通过改进的表面处理工艺, 开发了一种新的阻性板材料, 并在不同温度下对多块样板的电阻率进行了测量. 对比了基于此新型阻性板的不同电阻率RPC模型室的探测效率、计数率和暗电流. 利用¹³⁷Cs γ源和实验束流研究了流光模式RPC的抗辐照性能. 结果表明此新型阻性板RPC满足BESⅢ μ探测器的要求.     

快速凝固Cu-Pb过偏晶合金的性能表征

研究了Cu-Pb过偏晶合金的急冷快速凝固组织特征,定量表征了快速凝固Cu-Pb过偏晶合金的电阻率和力学性能,理论分析了冷却速率和组织形态对合金性能的影响规律. 研究结果表明,在急冷快速凝固条件下,Cu-Pb过偏晶合金中的(Cu)相和(Pb)相均以枝晶方式生长,晶体形态以均匀细小的等轴晶为特征. 随着冷却速率增大,一方面,凝固组织显著细化,晶界增多,对自由电子的散射作用增强,合金电阻率显著增大;另一方面,细晶强化作用增强,合金的抗拉强度呈线性升高,同时,伴随着晶体缺陷数量的增多,合金的伸长率降低. 关键词： Cu-Pb过偏晶合金 快速凝固 电阻率 力学性能     

Au/SrTiO3/Au界面电阻翻转效应的低频噪声分析

本文研究了Au/SrTiO₃/Au三明治结构中的双极电阻翻转效应, 观察到高、低阻态的电阻弛豫现象. 低频噪声测量表明高、低阻态的电阻涨落表现出1/f行为. 对比试验表明, 高阻态的低频噪声来源于反向偏置肖特基势垒和氧空位的迁移, 强度较大, 低阻态的噪声则源于类欧姆接触底电极区域的氧空位迁移导致的载流子涨落, 强度较低. 同时, 界面上氧空位浓度的弛豫导致了高、低阻态的弛豫过程. 关键词： 电阻翻转效应 低频噪声 氧空位     

Mg-Al系工业合金牌号的成分式解析

Mg-Al系牌号是应用最广的镁基工业合金,但其牌号背后的成分根源一直未知,构成研发新合金的主要障碍.本文应用描述固溶体短程序结构特征的团簇共振模型,得到了Mg-Al二元固溶体的最理想化学结构单元[Al-Mg_(12)]Mg_1,然后对《the American Society for Testing Materials》手册中所有Mg-Al系工业合金牌号进行成分解析,得到相应团簇成分式,如AZ63A合金解析后的团簇成分式为[Al_(0.78)Zn_(0.16)-Mg_(12)]Mg_(1.04)Mn_(0.02),AZ81A合金解析后的团簇成分式为[Al_(0.97)Zn_(0.03)-Mg_(12)]Mg_(0.98)Mn_(0.02).再根据成分式与化学结构单元之间的误差,对比该牌号合金的力学性能,验证了该化学结构单元在Mg-Al体系中的准确性,揭示出看似复杂的工业合金牌号后面隐藏的简单成分规律,为发展Mg-Al体系合金指出了一个全新的途径.     

Isotopically driven transitions in LaPrCaMnO system

The effect of oxygen isotope substitution on transport and magnetic properties is studied for (La_1−yPr_y)_0.7Ca_0.3MnO₃ ceramics and thin films. The temperature dependence of electrical resistivity reveals the metal–insulator transition induced by the ¹⁶O→ ¹⁸O substitution at y=0.75 (ceramics) and y=0.5 (films on LaAlO₃). Neutron powder diffraction at y=0.75 demonstrates a striking difference between magnetic structures in the samples with ¹⁶O and ¹⁸O. Measurements of AC magnetic susceptibility allow us to analyze the magnetic phase diagram and its changes related to the isotope substitution.     

Correlation between electron state density change and the electrical resistivity and magnetic permeability changes in the nanostructured powder of the NiMo alloy

The nanostructured powders of the Ni_95.4Mo_4.6 and Ni₉₉Mo₁ alloys (average crystallite dimensions of 14 and 21 nm) were obtained by the electrochemical deposition from ammonium solutions of nickel and molybdenum salts. The method of differential scanning calorimetry (DSC) and measurement of temperature dependence of the powder's electrical resistivity, magnetic permeability and the thermoelectromotive force were employed to examine structural changes of the powders. The nanocrystalline alloys Ni_95.4Mo_4.6 and Ni₉₉Mo₁ were stable up to about 460 K. The thermal stabilization of the alloys takes place within the temperature interval of 460–570 K. As a result of this process, a decrease in the electrical resistivity and increases in magnetic permeability as well as electron state density in the proximity of the Fermi level are observed. The crystallization temperature depends upon the current density of powder formation. The nanocrystalline alloy Ni_95.4Mo_4.6 obtained at j=70 mA cm⁻² becomes crystallized in the temperature range between 650 and 840 K, while the Ni₉₉Mo₁ alloy obtained at j=180 mA cm⁻² crystallizes in the 580–950 K temperature interval. The electrical resistivity and magnetic permeability of the nanocrystalline alloy decreased while the alloy's electron state density near the Fermi level increased after the process of crystallization took place. The electrical resistivity decrease recorded during the structural changes was due to an increase in the electron state density in the proximity of the Fermi level, as well as to an increase in the mean free path of the conducting electrons.     

The T-contribution to the electrical resistivity at low temperatures in NiAs-type Ni1−xS1−ySey

The y(1−y)-like maxima in Ni_0.98S_1−ySe_y are found beyond y_c in the y-dependences of the coefficient of the T² contribution to the resistivity and of the residual resistivity. Here, the critical concentration of the antiferromagnetic and less-conductive phase is determined to be y_c = 0.095.     

Temperature dependence of the electrical resistivity of amorphous Co80−xErxB20 alloys

The temperature dependence of the electrical resistivity of amorphous Co_80−xEr_xB₂₀ alloys with x=0, 3.9, 7.5 and 8.6 prepared by melt spinning in pure argon atmosphere was studied. All amorphous alloys investigated here are found to exhibit a resistivity minimum at low temperature. The electrical resistivity exhibits logarithmic temperature dependence below the temperature of resistivity minimum T_min. In addition, the resistivity shows quadratic temperature behavior in the interval T_min<T<77 K. At high temperature, the electrical resistivity was discussed by the extended Ziman theory. For the whole series of alloys, the composition dependence of the temperature coefficient of electrical resistivity shows a change in structural short range occurring in the composition range 8–9 at%.     

Effect of Pr and Ca substitution on superconductivity in Y(1−x−yPrxCay)Ba2Cu3O7−δ

Pr substituted at constant Ca concentration for Y in (Y_1−x−yPr_xCa_y)Ba₂Cu₃O_7−δ superconductors have been prepared under identical conditions and the temperature dependence of the electrical resistivity of these samples are measured. The resistively determined values of T_c decrease linearly with increasing x (0 ≤ x ≤ 0.2) for constant y = 0.10 and 0.15 which provides convincing evidence that the suppression of superconductivity by Pr is mainly due to magnetic pair breaking. The suppression of superconductivity can also be correlated to the observed changes in oxygen content determined by iodometric analysis and to the average Cu-valences. However, it is found that the observed suppression of T_c cannot be compensated by appropriate hole doping with Ca.     

Influence of N2:(N2 + Ar) flow ratio and substrate temperature on the properties of zirconium nitride films prepared by reactive dc magnetron sputtering

Preferred crystal orientation and low electrical resistivity are required for ZrN_x films applied in electronic devices. In this paper, effects of N₂:(N₂+Ar) flow ratio (F(N₂)) and substrate temperature on the properties of the films deposited on glass substrate by reactive dc sputtering are investigated. In a wide range of F(N₂) (4–24%), the films show fcc NaCl structure. While for F(N₂) in the ranges of 5–12, 12–24 and >24%, the films show (1 1 1)/(2 0 0), (1 1 1) only and amorphous structures, respectively. The electrical resistivity increases with F(N₂) from 5 to 24%, and can be controlled to some extent by changing the substrate temperature.     

The vacancy defects and oxygen atoms occupation effects on mechanical and electronic properties of Mo_5Si_3 silicides

Improving brittle behavior and mechanical properties is still a big challenge for high-temperature structural materials.By means of first-principles calculations,in this paper,we systematically investigate the effect of vacancy and oxygen occupation on the elastic properties and brittle-orductile behavior on Mo_5Si_3.Four vacancies (Si_(–Va1),Si_(–Va2),Mo_(–Va1),Mo_(–Va2)) and oxygen occupation models (O_(–Mo1),O_(–Mo2),O_(–Si1),O_(–Si2)) are selected for research.It is found that Mo_(–Va2)vacancy has the stronger structural stability in the ground state in comparison with other vacancies.Besides,the deformation resistance and hardness of the parent Mo_5Si_3are weakened due to the introduction of different vacancy defects and oxygen occupation.The ratio of B/G indicates that oxygen atoms occupation and vacancy defects result in brittle-to-ductile transition for Mo_5Si_3.These vacancies and the oxygen atoms occupation change the localized hybridization between Mo–Si and Mo–Mo atoms.The weaker O–Mo bond is a contributing factor for the excellent ductile behavior in the O_(-Si2)model for Mo_5Si_3.     

Coercivity mechanism in nanophase (Nd–Pr)–Fe–B melt spun alloys

The nucleation mechanism to predict coercivity values in melt-spun exchange-coupled (Nd_1−xPr_x)_yFe_94−yB₆ alloys for various Nd:Pr ratios x, and Fe:RE ratios y, was tested using the dependence of the anisotropy constant K₁ on Pr content x for the minimum nucleation field H_N^min in the modified Brown's equation. Very good agreement was found between experimental data and theoretical values, confirming the predominance of the nucleation of reverse domains over the wall pinning process in the coercivity mechanism of melt spun REFeB alloys.     

Structure, oxygen stoichiometry and electrical conductivity in the system Sr-Ce-Co-O

Mixed oxides in the system S-Ce-Co-O were prepared by solid state reaction and by freeze-drying of precursor compounds followed by thermal treatment. Two types of perovskite oxides exist in the system: Solid solutions of the type Sr_{1 − y}Ce_yCoO_{3 − x} and mixed oxides of the type (1 − y)SrCeO₃ − ySrCoO_{3 − x}. Microstructures and phase compositions were determined by electron microscopy and X-ray diffraction. SrCoO_{3 − x} forms a solid solution of ceria on the A-site in the strontium cobaltite lattice up to 0.15 mol Ce. This solid solution corresponds to the high-temperature structure of pure SrCoO_{3 − x} and is characterized by high oxygen exchange and electrical conductivity. The oxygen deficiency x was measured by solid electrolyte coulometry. The oxygen deficiency of solid solutions Sr_{1 − y}Ce_yCoO_{3 − x} increases with temperature and decreases with pO₂ in the ambient atmosphere and with increasing Ce dopant concentration. The pO₂-T-x diagram of the solid solution was determined. The T, pO₂ and dopant concentration dependencies of electrical conductivity were measured by a four-point d.c. technique. By Ce doping strontium cobaltite becomes a stabilized high-conductive material (maximum conductivity: 500 S cm⁻¹ at 400 °C, E_a = 0.025 eV, p-type). Above this temperature the T-coefficient of the conductivity changes from positive (semiconducting) to negative values.