Influence of Ga+ ion irradiation on thermal relaxation of exchange bias field in exchange-coupled CoFe/IrMn bilayers

This paper reports that the CoFe/IrMn bilayers are deposited by magnetron sputtering on the surfaces of thermallyoxidized Si substrates.It investigates the thermal relaxations of both non-irradiated and Ga + ion irradiated CoFe/IrMn bilayers by means of holding the bilayers in a negative saturation field.The results show that exchange bias field decreases with the increase of holding time period for both non-irradiated and Ga + ion irradiated CoFe/IrMn bilayers.Exchange bias field is also found to be smaller upon irradiation at higher ion dose.This reduction of exchange bias field is attributed to the change of energy barrier induced by ion-radiation.     

Synthetic Co50Pt50/Ru/CoFe hard–soft trilayer in spin valves

The influence of deposition power and seedlayer on the properties of hard magnet Co₅₀Pt₅₀ was studied. Co₅₀Pt₅₀(/Co₉₀Fe₁₀)/Ru/Co₉₀Fe₁₀ trilayer was used as pining/pinned layer in spin valves. The influences of different hard layer, soft layer and free layer on exchange bias, interlayer coupling, and magnetoresistance (MR) ratio were studied. Weak antiferromagnetic interlayer coupling was obtained by adjusting the thickness of hard and soft layers. MR of a spin valve with structure Cr2/CoFe0.5/CoPt4/CoFe0.5/Ru0.8/CoFe2.2/Cu2.05/CoFe2.6/Cu1.1/Ta1 reached 10.68% (unit in nm), which is comparable to those of IrMn-based synthetic spin valves. The increment of the coercivity of the free layer is mainly due to the static magnetic interaction between the hard layer and the free layer.     

Degradation of the Giant Magnetoresistance in Fe/Cr Multilayers Due to Ar-Ion Beam Mixing

The influence of 200 keV Ar-ion irradiation on the interlayer coupling in the Fe/Cr multilayer system exhibiting the giant magnetoresistance effect (GMR) is studied by conversion electron Mössbauer spectroscopy (CEMS), VSM hysteresis loops, magnetoresistivity and electric resistivity measurements and supplemented by the small-angle X-ray diffraction (SAXRD). The increase of Ar ion dose causes an increase of interface roughness, as evidenced by the increase of the Fe step-sites detected by CEMS as a result of which the GMR gradually decreases and vanishes at doses exceeding 1×10¹⁴ Ar/cm². A degradation of GMR with increasing Ar-ion dose is related to the formation of pinholes between Fe layers and the decrease of the antiferromagnetically coupled fraction.

     

A study on CoFe/p-Si interfacial structures before and after swift heavy ion irradiation

Interfacial structures of CoFe/p-Si have been studied before and after the swift heavy ion (～100?MeV, Ni⁷⁺) irradiation to investigate its electronic and magnetic behavior. X-ray diffraction (XRD), atomic force microscopy, magnetic force microscopy and magnetization characteristics (M–H) from vibrating sample magnetometer (VSM) techniques have been used for the above. XRD data have confirmed the formation of the CoFe alloy phase along with the silicide phases of Fe and Co. It is observed that there is an irradiation-induced growth in crystallite but surface remains smooth with a surface roughness of ～34?nm. A very significant increase has been observed in the magnetization and that too with irradiation dose as compared with unirradiated ones, maintaining their superparamagnetic behavior. The results could be understood due to the role played by various magnetic phases in the structure. The magnetic field sensitivity on electronic transport across the structures has also increased in a significant manner after the irradiation as compared with unirradiated ones. The magnetic field sensitivity has resulted in an MR of 20%. The results could be understood due to the irradiation induced interfacial intermixing to result in increased magnetic phases of silicide for the observed significant magnetic behavior on the irradiation.     

Magnetoresistance of epitaxial SrRuO3 thin films on a flexible CoFe2O4-buffered mica substrate

We have investigated the magnetoresistance of epitaxial SrRuO₃ (SRO) thin films on a flexible CoFe₂O₄ (CFO)-buffered mica substrate. High-resolution X-ray diffraction and transmission electron microscopy revealed that the SRO film could be epitaxially grown on a mica substrate with a 22-nm-thick CFO buffer layer. The epitaxial relationships were SRO [1–10] || CFO [1–10] || mica [010] and SRO [111] || CFO [111] || mica [001]. Epitaxial SRO thin films exhibited two magnetoresistance (MR) peaks; one peak occurred at a Curie temperature of 160 K (HT-MR) and the other at a low temperature of 40 K (LT-MR). The LT-MR increased more rapidly with an increase of the buffer layer thickness than the HT-MR. The LT-MR was similar for the two orthogonal current directions with respect to the magnetic field. We explained the HT-MR and LT-MR in terms of the suppression of spin fluctuations and the magnetic rotation of crystallographic domains, respectively.     

Influence of high-energy electron irradiation on the transport properties of La1-xCaxMnO3 films ($$(x \approx 1/3)$$ )

The effect of crystal lattice disorder on the conductivity and colossal magnetoresistance in La_1-xCa_xMnO₃ ( ) films has been examined. The lattice defects are introduced by irradiating the film with high-energy ( MeV) electrons with a maximal fluence of about cm^-2. This comparatively low dose of irradiation produces rather small radiation damage in the films. The number of displacements per atom (dpa) in the irradiated sample is about 10^-5. Nevertheless, this results in an appreciable increase in the film resistivity. The percentage of the resistivity increase in the ferromagnetic metallic state (below the Curie temperature ) was much greater than that observed in the insulating state (above ). At the same time irradiation has much less effect on or on the magnitude of the colossal magnetoresistance. A possible explanation of such behavior is proposed. Received 21 July 1999 and Received in final form 27 December 1999     

Possible mechanism for tunneling magnetoresistance in La0.9Ba0.1MnO3/Nb-doped SrTiO3 p-n junctions

The observed tunneling magnetoresistance (TMR) effect in La_0.9Ba_0.1MnO₃ (LBMO)/Nb-doped SrTiO₃ (Nb-STO) p⁺-n junctions is investigated and a possible mechanism responsible for the TMR generation is proposed by taking into account the dynamic spin accumulation and paramagnetic magnetization in the Nb-STO layer. Because of carrier diffusion across the dynamic domain boundaries in the Nb-STO layer and spin disordering in the LBMO layer, the tunneling resistance through the junction is high at zero magnetic field. The spin disordering is suppressed upon applying a non-zero magnetic field, which results in the spin-polarized tunneling in this ferromagnetic/depletion layer/dynamic ferromagnetic sandwiched structure and thus the observed TMR effect. The dependence of the TMR effect on the domain size in the LBMO layer, the tunneling current and temperature as well is explained, qualitatively consistent with the experimental observation.     

Magnetoresistance in half-metallic/metallic ferromagnetic junction through silicon

We report spin transport through the silicon in novel magnetic junction with half metallic as free layer and metallic as pinned layer. We used La_0.7Sr_0.3MnO₃ as free layer, FeCo as pinned layer and studied the magnetoresistance through silicon as spacer layer. We fabricated this magnetic tunnel junction using RF/DC sputtering technique over SrTiO₃ substrate. Tunneling magnetoresistance (TMR) measurement for this junction at room temperature was found to be 1.1 %. At 2 K, we found a large magnetoresistance of 396 %. TMR found to be increased with decreasing temperature. The results are discussed.     

Consequences of electronic excitations in CoFe1.90Dy0.10O4

Present work reports the irradiation induced effects in Dy³⁺ doped cobalt ferrite nanoparticles in the regime of dominant electronic excitation processes induced by 100 MeV O⁷⁺ ion irradiation. Irradiation leads to the deterioration of crystalline phase as envisaged by X-ray diffraction. Crystallite size decreases with the increase of irradiation fluence. Disappearance of certain bands in Raman spectra at higher fluence of irradiation confirms the crystalline disorder induced by electronic excitations. Fourier transform infrared spectra show onset of cation migration from tetrahedral site to octahedral site and vice versa. X-ray absorption fine structure measurements depict the preservation of valence state of metal ions after irradiation. These measurements further infer bond breaking process in irradiated materials. Magnetic measurements carried out on these materials indicate slight increase of saturation magnetization at room temperature followed by the decrease of coercive field. Obtained results are discussed on the basis of appropriate mechanism.     

GMR enhancement in spin valves structures with nano-semiconducting layer

We report on the giant magnetoresistance enhancement in Co/Ru/Co-based spin valve structures with nano-semiconducting layer. The films were grown by ion beam sputtering on glass substrate at room temperature. The soft layer is composed of Fe/Co bilayers, while the hard layer is ensured by the Co/Ru/Co artificial antiferromagnetic subsystem (AAF) as follows: Fe_5nm/Co_0.5nm/Cu_3nm/Co_3nm/Ru_0.5nm/Co_3nm/Cu_2nm/Cr_2nm. This structure shows a giant magnetoresistance (GMR) signal of about 1.7%. To confine the electrons inside the spin valve structure, a 1.5 nm thick ZnSe semiconducting layer has been grown on the top of the AAF. This induces a strong GMR increase, up to 4%, which can be attributed to a dominant potential step at the Co/ZnSe interface.     

Ion beam mixing of Al/Fe binary systems

Ion beam mixing of Al layers on Fe and Fe layers on Al are studied by irradiation with 200 keV Xe⁺-ions at room temperature as a function of the thickness of the top layer and of the ion fluence from 5×10¹⁵ to 7.5×10¹⁶ions/cm². Deconvolution procedures are needed to separate the influence of the ion sputter profiling by AES from the ion beam induced mixing effects. Auger electron spectroscopy data reveal that the mixing induced diffusivity ought to be considered as a function of concentration. The diffusion coefficients are evaluated by the Boltzmann-Matano method. A strong dependence of the diffusion coefficients and also the mixing efficiencies from the ion dose, the depth of the interface and the nuclear energy deposition were observed. Results are discussed in terms of the diffusional and collisional mixing as well as chemical affinity of both Fe and Al.     

Thermal Stability of CoFe/Cu/CoFe/IrMn Top Spin Valve

We present a study of thermal stability of the top spin valve with a structure of seed Ta （Snm）/Co75Fe25 （5 nm ） /Cu （2.5 nm） /Co75Fe25 （5 nm ） /Ir20Mn80（12 nm） /cap Ta （8 nm） deposited at room temperature by magnetron sputtering. A vibrating sample magnetometer fixed with a heater was used to record the magnetic hysteresis loops at variational temperatures and x-ray diffraction was performed to characterize the structure of the multilayer. The exchange field Hex and the coercivity of the pinned CoFe layer Hop decrease monotonically with increasing temperature. The coercivity of the free CoFe layer Hcf in the spin valve shows a maximum at 498K. The temperature dependences of Hex, Hop and Hcf have also been discussed.     

Radiation damage of material surfaces under prolonged irradiation with He+ and Ar+ ions with broad energy spectra

The results of studying the redistribution of Be, Al, Ti, Fe, Cu, Zr, Mo, and W atoms incorporated in polycrystalline metal samples under irradiation with He⁺, (He⁺ + Ar⁺), and Ar⁺ ion beams with a broad energy spectrum and an average energy of 10 keV at irradiation doses of 1 × 10²¹ ion/cm² are studied. It is discovered that irradiation at doses exceeding 1 × 10¹⁹ ion/cm² results in local small-crystal formations being produced in a near-surface substrate layer. Their typical dimensions are less than 1–5 μm, and their the density is up to 1–100. They contain incorporated atoms and impurity atoms with a concentration of 0.1–10 at %. Subsequent irradiation at a dose of 1 × 10²⁰ ions/cm² or more leads to disappearance of these formations, mainly because of sputtering processes.     

Inverse TMR in a nominally symmetric CoFe/AlOx/CoFe junction induced by interfacial Fe3O4 investigated by STEM-EELS

We have found inverse tunneling magnetoresistance (TMR) with a non-symmetric bias voltage dependence in a nominally symmetric Si (001)/Ag/CoFe/AlO_x/CoFe/IrMn/Ag magnetic tunnel junction after field cooling. The O K edge fine structure extracted from electron energy loss spectroscopy spectrum images taken at the interfaces of junctions with inverse TMR shows a thin, discontinuous Fe₃O₄ layer at the CoFe/AlO_x interfaces. The Fe L_2,3 edge core level shifts are also consistent with those of Fe₃O₄. We find no Fe₃O₄ layer in junctions with normal TMR. We believe this Fe₃O₄ layer is responsible for the inverse TMR.     

Interaction of high-power laser pulses with glasses containing implanted metallic nanoparticles

Sodium calcium silicate glasses with Ag⁺ implanted ions are studied. The ion implantation conditions are as follows: the energy is 60 keV, the dose is 7×10¹⁶ cm⁻², and the ion current density is 10 μA/cm². Ion implantation provides the formation of a composite layer that incorporates silver nanoparticles in the surface region of glass. The size distribution of nanoparticles over the depth in the composite layer is strongly nonuniform. The effect of a high-power pulsed excimer laser on the composite layer is investigated. It is found that, under laser irradiation, the size of silver nanoparticles in the implanted layer decreases but the size distribution of nanoparticles over the depth remains nonuniform, even though it becomes slightly narrower compared to that observed prior to irradiation. The experimental results are interpreted in terms of the effects of the melting of glass and metallic particles on a nanosecond scale. __________ Translated from Fizika Tverdogo Tela, Vol. 43, No. 11, 2001, pp. 2100–2106. Original Russian Text Copyright ? 2001 by Stepanov, Popok, Hole, Bukharaev.     

多自旋态离子Co替代诱导La2/3Ca1/3MnO3体系的输运反常

利用具有多自旋态的Co离子进行Mn位替代,制备了La_2/3Ca_1/3Mn_1-xCo_xO₃ (0≤x≤0.15) 系列样品并研究了体系的结构和输运特性.结果表明,在替代范围内,样品呈现很好的单相结构,各晶格参数随替代量的增大而减小;Co替代导致体系出现电输运反常,具体表现为在居里温度T_C以下电阻-温度曲线的二次金属-绝缘转 关键词： Mn位替代 双峰现象 自旋结构 磁电阻效应     

Effect of cobalt on the magnetoresistance characteristics of rare-earth doped manganites

The effect of cobalt-doping on the magnetic, transport and magnetoresistance characteristics of La_1-xSr_xMnO₃ was investigated. The results show that the magnetoelectric property of rare-earth doped manganites is greatly affected by substitution of Co for Mn sites. The Curie temperature as well as the magnetic moment decreases with the increase of doping concentration, and the samples exhibit obvious characteristics of the spin glass state. Moreover, the magnetoresistance is evidently modulated by doping concentration, and the relevant temperature dependence is also suppressed. In addition, low-temperature magnetoresistance is significantly promoted as doping concentration increases, which renders a value of approximately 50% in the temperature range of 5--200~K and varies within 12.5%. It can be attributed to the effect of spin scattering, induced by cobalt doping, on the itinerant electrons of Mn ions, thus introducing a spin-disorder region into the ferromagnetic region of double-exchange interaction between neighbouring Mn³⁺ and Mn ³⁺ ions.     

Interface study of ion irradiated Cu/Ni/Cu(0 0 2)/Si magnetic thin film by X-ray reflectivity

The irradiation effect of 1 MeV C⁺ on the interface and magnetic anisotropy of epitaxial Cu/Ni system with a perpendicular magnetic anisotropy was investigated by using magneto-optical Kerr effects, grazing incident diffraction and X-ray reflectivity. The magnetic easy-axis was altered from the direction along the surface normal to in-plane and the strain in the Ni layer was relaxed after ion irradiation. Though the interface between the top Cu layer and the Ni layer becomes rough, the contrast of electron densities of Cu and Ni layer increases and the grain-growth occurs during ion irradiation. These phenomena arise from thermo-chemical driving force, i.e. heat of formation, which may be a crucial factor in determining the interface shape in the case of indirect energy transfer mechanism. Therefore, the change of the magnetic anisotropy of the Ni/Cu system after ion irradiation is not due to the formation of the intermixed layer at the interface. The ion irradiation effects on the grain-growth and enhancement of the electronic contrast between Ni and Cu are explained by the interfacial atomic movement caused by thermo-chemical driving force.     

Formation of the single-phase ferromagnetic semiconductor (Ga,Mn)As by pulsed laser annealing

It is shown that (Ga,Mn)As layers formed by Mn⁺ ion implantation into GaAs and subsequent annealing by an excimer laser pulse with an energy density to 200–300 mJ/cm² feature the properties of the p-type semiconductor and ferromagnetic properties. The threshold dose of implanted ions (~10¹⁵ cm^–2) for activating Mn acceptors is determined. The sheet hole concentration and the Curie temperature increase with further increasing Mn⁺ ion dose. Hysteresis loops in the magnetic field dependences of the Hall effect, the negative magnetoresistance, and magnetic and structural studies suggest that the layers are analogues of single-phase ferromagnetic compounds (Ga,Mn)As formed by low-temperature molecular beam epitaxy.     

Magnetoresistance study and interlayer coupling of CoFe/Os/CoFe thin films

The CoFe/Os/CoFe thin films were deposited on natural oxidized Si(1 0 0) substrates at room temperature by an ultra-high vacuum DC-magnetron sputtering system with a base pressure less than 1×10⁻⁸ Torr. The thickness of the ferromagnetic layers was 100 Å in all cases and a series of trilayers with Os spacer ranging from 3 to 20 Å was made. Effects of the Os layer thickness on the magnetoresistance (MR) and magnetic properties were investigated. The results showed that the magnetism switched from ferromagnetic (Os thickness=3, 5 Å) to antiferromagnetic (Os thickness=7–13 Å) and then ferromagnetic (Os thickness=20 Å) again. From the MR study, we see that the AMR ratio decreased from 4.64% to the minimum value 0.69% at 9 Å and then increased; GMR ratio increased from 0.01% to the maximum value 0.43% at 9 Å and then decreased. From the hysteresis loops, the results exhibited that coercivity increased from 16 Oe to the maximum value 92 Oe at 9 Å and then decreased, and squareness value decreased from 0.97 to the minimum value 0.17 at 9 Å and then increased. Dependence of saturation field on Os spacer-layer thickness for CoFe trilayers showed a maximum value 216 Oe at 9 Å. This suggests that the small GMR effect may be related to the small exchange coupling strength in CoFe/Os/CoFe thin films.