Charge order driven by Fermi-arc instability and its connection with pseudogap in cuprate superconductors

The recently discovered charge order is a generic feature of cuprate superconductors, however, its microscopic origin remains debated. Within the framework of the fermion-spin theory, the nature of charge order in the pseudogap phase and its evolution with doping are studied by taking into account the electron self-energy (then the pseudogap) effect. It is shown that the antinodal region of the electron Fermi surface is suppressed by the electron self-energy, and then the low-energy electron excitations occupy the disconnected Fermi arcs located around the nodal region. In particular, the charge order state is driven by the Fermi-arc instability, with a characteristic wave vector corresponding to the hot spots of the Fermi arcs rather than the antinodal nesting vector. Moreover, although the Fermi arc increases its length as a function of doping, the charge order wave vector reduces almost linearity with the increase of doping. The theory also indicates that the Fermi arc, charge order and pseudogap in cuprate superconductors are intimately related to each other, and all of them emanates from the electron self-energy due to the interaction between electrons by the exchange of spin excitations.     

A meshless method of line radial base function study of Gaussian wave packet broadening in few semiconducting mediums: electron–electron interaction effects

In this paper, we have studied the effect of electron–electron interaction on wave packet broadening in different semiconducting mediums in the presence of conduction band non-parabolicity. We have solved the resulting one dimensional fourth order Schrödinger equation by means of a meshless radial base function approach and 2nd order Runge Kutta method. We have compared different semiconducting mediums GaAs, GaN, AlN, InSb and GaSb and showed that in the absence of the electron–electron interaction, the Gaussian wave packet decays with time elapse while in the presence of the electron–electron interaction, the Gaussian wave packet localizes when time increases. Finally, Gaussian wave packet also localizes faster when we increase the electron–electron interaction strength.     

Response of cellulose nitrate track detectors to electron doses

In order to study alternative dose determination methods, the bulk etching velocity and the latent track annealing of LR 115 track detectors was studied during electron irradiation runs from a Pelletron accelerator. For this purpose alpha irradiated and blank detectors were exposed to increasing electron doses from 10.5 to 317.5 kGy. After the irradiation with electrons the detectors were etched under routine conditions, except for the etching time, that was varied for each electron dose in order to reach a fixed residual thickness. The variation of the bulk etching velocity as a function of each one of the electron doses supplied, was interpolated in order to obtain dosimetric response curves. The observed annealing effect on the latent tracks is discussed as a function of the total electron doses supplied and the temperature.     

利用介质阻挡探针法测量大气压氦等离子体射流电子密度

分别利用电子的漂移速度和等离子体的传播速度计算了大气压下氦等离子体射流的电子密度。     

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The electron densities in the atmospheric pressure helium plasma were calculated by means of electron drift velocity and the jet velocity respectively. The electron velocity and jet velocity can be calculated by means of helium plasma jet current measured by a dielectric probe and plasma discharge current signal measured by voltage probes. The results show that the estimated electron densities of the helium plasma jet calculated from electron drift velocity and the jet velocity are in the order of 10 ¹¹ cm ^-3 and they increase with applied voltage. There is a little fluctuation in the value of the electron density along the jet axis of the plasma. This result is the same as the measured electron density in atmospheric pressure helium non-thermal plasma jet by using a Rogowski coil and a Langmuir probe. This is in one order lower than the electron density measured by microwave antenna.     

大气压氩气环境下体积介质阻挡放电光谱特性

通过介质阻挡放电产生的等离子体可与燃料中的烃类分子发生碰撞裂解反应,将燃料分子裂解生成更容易起爆的氢气和小分子烃类,能有效改善液体燃料连续旋转爆震发动机的起爆性能。该研究在真空仓中开展体积介质阻挡放电的丝状放电光谱测试,分析了大气压氩气环境下体积介质阻挡放电的电子激发温度和电子密度随加载电压的变化规律。丝状放电的电子激发温度通过波尔兹曼斜率法计算,电子密度采用斯塔克展宽法计算。发现发射谱线均由氩原子4p-4s能级跃迁产生;各谱线强度随加载电压的提高均呈上升趋势,且与电压基本呈线性关系;对于大气压丝状放电,加载电压对电子激发温度和电子密度没有明显影响作用,加载电压12.5～14.5 kV范围内,电子激发温度稳定在3 400 K附近,电子密度在1025 m-3量级。     

Effect of Higher Order Axial Electron Temperature on Self-Focusing of Electromagnetic Pulsed Beam in Collisional Plasma

Effect of higher order axial electron temperature on self-focusing of electromagnetic pulsed beam in collisional plasma is investigated. It is shown that higher order axial electron temperature T_p4 is not trivial than T_p0 and T_p2, which can modify slightly radial redistribution of electron density and increases effective dielectric constant. As a result, on one hand, slightly reduce electromagnetic beam self-focusing in the course of oscillatory convergence, on the other hand, quicken beam divergence in the course of steady divergence, i.e., higher order axial electron temperature T_p4 can decrease the influence of collisional nonlinearity in collisional plasma.     

腔体双边二次电子倍增一阶与三阶模式瞬态特性对比

为评估高阶模式二次电子倍增对加速器射频腔动态建场过程的影响,采用蒙特卡罗与粒子模拟相结合的方法对金属无氧铜腔体双边二次电子倍增一阶与三阶模式的瞬态演化及饱和特性进行了数值模拟对比研究.研究结果表明:二次电子倍增过程中,二次电子数目、放电电流、放电功率、沉积功率随时间呈现以指数形式快速增长后趋于饱和振荡的物理规律;相对一阶模式,三阶模式的饱和值更低且上升时间更长.放电电流存在延时现象,由此引发了二次电子倍增过程中部分充电现象的出现.统计发现平均放电功率等于平均沉积功率,三阶模式的放电功率大约是一阶模式1%的水平,由此判断加速器腔体动态建场过程中高阶模式的影响较小.二次电子倍增过程中,一阶模式呈现单电子束团加速运动特性,而三阶模式则呈现加速/减速/加速及多电子束团相向运动的复杂特性;二次电子倍增进入饱和后,三阶模式的空间电荷效应明显弱于一阶模式.     

Electron acceleration in the inverse free electron laser with a helical wiggler by axial magnetic field and ion-channel guiding

Electron acceleration in the inverse free electron laser (IFEL) with a helical wiggler in the presence of ion-channel guiding and axial magnetic field is investigated in this article. The effects of tapering wiggler amplitude and axial magnetic field are calculated for the electron acceleration. In free electron lasers, electron beams lose energy through radiation while in IFEL electron beams gain energy from the laser. The equation of electron motion and the equation of energy exchange between a single electron and electromagnetic waves are derived and then solved numerically using the fourth order Runge-Kutta method. The tapering effects of a wiggler magnetic field on electron acceleration are investigated and the results show that the electron acceleration increases in the case of a tapered wiggler magnetic field with a proper taper constant.     

Control over the space-time structure of electron beams by high-intensity femtosecond laser radiation

The space-velocity distribution of electrons propagating in vacuum can be deformed by the ponderomotive potential produced by high-intensity femtosecond laser pulses, which makes it possible to subsequently separate such electrons from the initial beam. It is shown that optical modification of electron beams with kinetic energies on the order of 100 eV by femtosecond laser radiation with an intensity from 10¹⁴ to 10¹⁸ W/cm² makes it possible to form electron beams with a duration on the order of 50–100 fs. Examples of optical control over the shape of electron beams, based on deflection, reflection, focusing, and splitting of electron beams, are considered.     

二次电子分布函数对绝缘壁面稳态鞘层特性的影响

由于缺乏详细的理论计算和实验结果,在研究绝缘壁面稳态流体鞘层特性时,通常假设壁面出射的总二次电子服从单能分布(0)、半Maxwellian分布等.在单能电子轰击壁面的详细二次电子发射模型基础上,采用Monte Carlo方法统计发现:当入射电子服从Maxwellian分布时,绝缘壁面发射的总二次电子服从三温Maxwellian分布.进而,采用一维稳态流体鞘层模型进行对比研究,结果表明:二次电子分布函数对鞘边离子能量、壁面电势、电势及电子/离子密度分布等均具有明显影响;总二次电子服从三温Maxwellian分布时,临界空间电荷饱和鞘层无解,表明随着壁面总二次电子发射系数的增加,鞘层直接从经典鞘层结构过渡到反鞘层结构.     

Radiation ordering in quenched alloy sobserved “in situ” in the high voltage microscope

Different alloys with a face centered cubic disordered structure have been electron irradiated in the quenched or short range order state under direct observation in a high voltage electron microscope. Ordering due to 1 MeV irradiation has been observed in Au₄Mn, Ni₄Mo and Cu₃Pd. Care has been taken to avoid ordering due to the thermal effect of the electron beam. It has been demonstated that although similar states of order can be achieved by thermal and irradiation ordering, the path followed can be different however.     

ORDER ALLOY IN GexSi1-x/Si(100) STRAINED-LAYER SUPERLATFICES

The Ge_xSi_1-x/Si(100) strained-layer superlattices have been investigated by means of the transmission electron microscopy of the cross-sectional specimen (XTEM) and the high resolution electron microscopy (HREM), The order alloy with a period of modulation twice as large as the lattice constant along <100> zone axis has been found in the alloy layers of the superlattices with x≈0.4-0.5. This order struc-ture makes the superlattices inhomogeneously strained. The result of the compuler simulation shows that the order alloy exhibits an altemating stack of 2 monolayers of Ge atoms and 2 monolayers of Si atoms along the <100> zone axis. Thc calculated elastic strain energy of the disorder alloy reported in the litera-ture is very close to that of the order alloy along <100> zone axis. Thus, during the MBE growth of the alloy layers, both the disorder and order alloys can be formed along <100> zone axis.     

取代基对卟啉三阶光学非线性及弛豫过程的影响

研究了取代基对卟啉三阶光学非线性和激发态弛豫过程的影响，发现在同一取代位置，推电子基团取代使得卟啉三阶光学非线性极化纱数Ｘ值相对影响，而吸电子基团取代使得卟啉Ｘ值相对减少，对同一取代基在不同取代装置，发现推电子基团在邻位取代的Ｘ值大于其在对位取代卟啉的Ｘ值，而吸电子基团在邻位取代的Ｘ值小于其在对位取代卟啉的Ｘ值，另外，还发现推电子基团取代的卟啉弛豫过程比吸电子基团取代的卟啉弛豫过程快７倍。     

Analyses of two-cavity gyroklystron with feedback

Making use of the linear kinetic theory and the perturbation approach, a gyroklystron with feedback, in which a low order (TE₀₁₁) mode is presented in the bunching cavity by the feedback of the output cavity, and the low order mode in the bunching cavity is coupled by the electron beam to a high order (TE₀₂₁) mode in the output cavity, has been investigated in detail. And electron beam to wave interaction in each cavity and electron bunching mechanism in the bunching cavity have been analysed. The formulas of electron beam to wave interaction power and starting current etc. have been derived. Then some calculations are carried out.     

Effect of electron correlation on superconducting pairing symmetry

The role of electron correlation on different pairing symmetries are discussed in details where the electron correlation has been treated within the slave boson formalism. It is shown that for a pure s or pure d wave pairing symmetry, the electronic correlation suppresses the s wave gap magnitude (as well as the ) at a faster rate than that for the d wave gap. On the other hand, a complex order parameter of the form () shows anomalous temperature dependence. For example, if the temperature () at which the d wave component of the complex order parameter vanishes happens to be larger than that for the s wave component (), then the growth of the d wave component is arrested with the onset of the s wave component of the order parameter. In this mixed phase however, we find that the suppression in different components of the gap as well as the corresponding due to coulomb correlation are very sensitive to the relative pairing strengths of s and d channels as well as the underlying lattice. Interestingly enough, in such a scenario (for a case of )the gap magnitude of the d wave component increases with electron correlation but not for certain values of electron correlation. However, this never happens in case of the s wave component. We also calculate the temperature dependence of the superconducting gap along both the high symmetry directions ( and ) in a mixed symmetry pairing state and the thermal variation of the gap anisotropy [0pt][0pt] with electron correlation. The results are discussed with reference to experimental observations. Received: 26 August 1997 / Revised: 31 December 1997 / Accepted: 28 January 1998     

强流脉冲电子束作用下20钢的微观结构状态

 为了研究金属材料的超快变形行为,利用强流脉冲电子束（HCPEB）装置对20钢进行轰击,采用X射线衍射、光学显微镜及透射电镜等技术分析了受轰击样品的变形组织与结构。实验结果表明,强流脉冲电子束能够在材料表层诱发幅值为1 GPa量级的应力,快速的加热和冷却过程在近表层诱发了强烈的塑性变形,并在材料表层内形成了复杂的位错缠结结构和位错胞结构,同时还伴随位错圈等空位簇缺陷的形成,多次轰击导致局部区域形成纳米和非晶结构。HCPBE轰击诱发的幅值极大的应力和极高的应变速率而导致的整个原子平面的位移可能是非晶结构形成的关键原因。     

利用倒梯矩形电子阻挡层降低深紫外激光二极管的电子泄露

为了有效降低深紫外激光二极管(DUV-LD)在有源区的电子泄露,提出了一种新颖的具有倒梯矩形的电子阻挡层(EBL)结构。通过使用Crosslight软件将矩形,梯矩形和倒梯矩形三种不同的结构进行仿真研究,比较三种结构器件的能带图、辐射复合率、电子空穴浓度、P-I以及V-I特性等,得出倒梯矩形EBL更能有效地抑制电子的泄露,从而改善了器件的光学和电学性能。     

Substrate influence in electron-phonon coupling measurements in thin Au films

Accurate understanding and measurement of the energy transfer mechanisms during thermal nonequilibrium between electrons and the surrounding material systems is critical for a wide array of applications. With device dimensions decreasing to sizes on the order of the thermal penetration depth, the equilibration of the electrons could be effected by boundary effects in addition to electron-phonon coupling. In this study, the rate of electron equilibration in 20 nm thick Au films is measured with the Transient ThermoReflectance (TTR) technique. At very large incident laser fluences which result in very high electron temperatures, the electron-phonon coupling factors determined from TTR measurements deduced using traditional models are almost an order of magnitude greater than predicted from theory. By taking excess electron energy loss via electron-substrate transport into account with a proposed three temperature model, TTR electron-phonon coupling factor measurements are more in line with theory, indicating that in highly nonequilibrium situations, the high temperature electron system looses substantial energy to the substrate in addition to that transferred to the film lattice through coupling.     

Medium range order of bulk metallic glasses determined by variable resolution fluctuation electron microscopy

Variable resolution fluctuation electron microscopy (FEM) experiments are implemented with hollow-cone dark-field transmission electron microscopy. Medium range order lengths of zirconium and iron based bulk metallic glasses and amorphous silicon nitride are determined from the FEM results. It shows that maximum normalized intensity variances of FEM images occur when their nominal resolution approaches the correlation length Λ of the amorphous materials. Additionally, differences in the length and magnitude of medium range order are compared between metallic and covalent bond amorphous materials.