Ar的类氦和类锂离子与Mo表面相互作用过程中的x射线发射

在兰州重离子加速器国家实验室电子回旋共振离子源上用Si(Li)探测器观测到了不同动能的Ar¹⁵⁺和Ar¹⁶⁺离子与Mo表面相互作用过程产生的x射线.在不同动能 的Ar¹⁶⁺与Mo表面作用过程中不仅能观测到Ar的K层x射线而且能观测到Mo的L层x 射线.在不同动能的Ar¹⁵⁺入射下只能观测到Mo的L层x射线.实验结果表明，Ar的 K层x 射线的产额与入射离子的动能、作用过程中形成的空心原子携带的势能以及入射离子和靶原 子x射线的竞争等有关，Mo的L层x射线随入射离子动能的增加而增加. 关键词： x射线发射 高电荷态离子 Mo表面     

高电荷态离子Arq+与不同金属靶作用产生的X射线

研究了高电荷态离子Ar^q+(q=16，17，18)入射金属Be，Al，Ni，Mo，Au靶表面产生的X射线谱.实验结果表明，Ar的Kα-X射线是离子在与固体表面相互作用过程中固体表面之下形成空心原子发射的.电子组态1s²的高电荷态Ar¹⁶⁺离子在金属表面中性化过程中，存在的多电子激发过程使Ar¹⁶⁺的K壳层电子激发产生空穴，级联退激发射Ar的Kα 特征X射线.Ar¹⁷⁺离子在金属表面作用过程中产生的X射线谱形与靶材料没有明显的关联,入射离子的Kα-X射线产额与其最初的电子组态有关，靶原子的X射线产额与入射离子的动能有关. 关键词： 高电荷态离子 空心原子 多电子激发 X射线     

Ar16+和Ar17+离子与Zr作用产生的X射线谱

将超导离子源提供的10—20keV/q Ar¹⁶⁺和Ar¹⁷⁺离子入射到Zr金属表面,在相互作用中产生的X射线谱表明,高电荷态Ar¹⁶⁺离子在金属表面中性化过程中有可能存在多电子激发,使Ar¹⁶⁺的K壳层电子被激发形成空穴,在退激过程中发射特征Kα-X射线.空心原子Ar的K层发射X射线强度随入射离子的动能而减弱,靶原子Zr的L壳层发射X射线强度随入射离子动能的增加而增强.Ar¹⁷⁺的单离子的Kα- 关键词： 高电荷态离子 空心原子 X射线     

铝阳极氧化多孔膜制备及Eu3+组装

在草酸体系中,采用二次阳极氧化法可制备大面积有序铝阳极氧化多孔膜(AAO),用X射线粉末衍射(XRD)仪进行物相分析,利用扫描电子显微镜(SEM)表征多孔膜的形貌。研究表明,低温条件下制备的多孔膜孔径大小分布均匀,有序性好。微孔在膜的表面沿二维空间规则排列,具有一定的六方对称准周期性。孔道相互平行且与铝基底垂直。低温条件下,草酸体系中电解获得的AAO膜以无定形结构存在,经过800℃高温退火后转化为γ-Al2O3。通过水热反应法,获得了Eu^3 的铝阳极氧化多孔膜组装体(AAO：Eu^3 ),研究了组装体系的光谱特性。结果表明,这种方法制备的发光材料具有非常高的组装浓度,其发光具有很高的色纯度。     

一种可控纳米柱阵列的研制

在一次阳极氧化法制备多孔氧化铝(anodized aluminum oxide,AAO)的基础上,进行了二次、三次、四次氧化制备AAO,并对多次氧化制备多孔AAO的电流变化曲线和模板表面的形貌特点等进行了比较分析.二次、三次、四次氧化制备的AAO纳米孔孔径依次增大、孔间距减小,而模板表面的纳米孔有序性分布没有明显变化.控制一次氧化AAO模板的除膜时间,～10 min即可得到孔径规则、高度有序的AAO膜.最后,利用所制备的不同孔深和孔径的AAO为模板,通过热纳米压印复制技术制备了长度和直径等性质可控的PMMA纳米柱阵列. 关键词： 纳米柱阵列 聚甲基丙烯酸甲酯 多孔氧化铝模板 多次氧化法     

通孔阳极氧化铝膜的制备及其性能的研究

在15% H₂SO₄阳极氧化液中添加硝酸镨制备阳极氧化铝(AAO)膜以提高AAO膜的性能,采用化学腐蚀和微波处理相结合的方法,去除AAO膜的阻挡层,制备通孔的AAO膜。分别研究镨的添加量、氧化电压对AAO膜的厚度和硬度的影响及腐蚀时间、微波处理时间分别对AAO膜的阻挡层的影响,分别用能谱和扫描电镜等对AAO膜进行了表征。在15% H₂SO₄阳极氧化液中添加硝酸镨,制备出的AAO膜具有更大的厚度和硬度,当氧化电压为23 V时,在15% H₂SO₄+0.14 Pr g·L-1混合液中制备的AAO膜的厚度和硬度分别为162 μm和275.1 HV,与在阳极氧化液为15% H₂SO₄溶液中制备的AAO膜的厚度和硬度(150 μm和224.8 HV)相比,分别提高8.0%和22.4%。当氧化电压在19～23 V范围时,AAO膜的厚度随着氧化电压的增大而增加;AAO膜的硬度随着氧化电压的增大而减小。将AAO膜在35 ℃和5% H₃PO₄溶液中腐蚀13 min,再用超声波处理10 min,可得到通孔的AAO膜。腐蚀后AAO膜表面絮状物为Al₂O₃。     

多孔阳极氧化铝薄膜光学常数的确定

根据多孔阳极氧化铝(AAO)薄膜的实验透射谱(200—2500nm)，采用极值包络线算法确定其光学常数，并由此较精确地计算出AAO薄膜样品在该波段的光学常数.结果表明，多孔氧化铝薄膜表现出直接带隙(能隙约4．5eV)半导体的光学特性，且其光学常数与制样中的重要工艺参数阳极氧化电压有显著的相关性，即随阳极氧化电压的增加，AAO薄膜的厚度、折射率和光学能隙变大，消光系数减小．同时，计算得到的薄膜厚度与实测值相吻合，则说明计算结果和实验值是自洽的. 关键词： 薄膜光学 光学常数 多孔阳极氧化铝 阳极氧化电压     

H+和Ar11+激发Si的K壳层X射线发射研究

测量了50–250 keV H⁺和1.0–3.0 MeV Ar¹¹⁺ 轰击Si表面过程中辐射的X射线. 结果表明, 在Ar¹¹⁺入射的情况下, 引起了Si的L壳层上3, 4个电子的多电离.计算了Si的K壳层X射线产生截面, 并将两体碰撞近似(BEA), 平面波恩近似, ECPSSR理论计算与实验值进行了对比. ECPSSR理论与质子产生的截面数据能够很好地符合; 而考虑多电离后, BEA理论与Ar¹¹⁺的实验结果符合较好. 关键词： X射线 高电荷态重离子 多电离     

氦氢离子协同注入对锆膜形貌及物相结构的影响

 采用磁控溅射法制备了Zr-Mo膜,随后在低能静电加速器上分别采用剂量为2.80×10¹⁷~1.12 ×10¹⁸ions·cm^-2的He⁺、H⁺离子辐照Zr-Mo膜,利用光学透镜、扫描电镜、原子力显微镜和X射线衍射研究He⁺、H⁺离子协同注入效应对Zr-Mo膜微观结构的影响。实验结果表明：原始Zr-Mo膜表层晶粒清晰可见,尺寸约为200nm;辐照效应可导致Zr-Mo膜表层产生微观损伤区域,在注He⁺基础上注H⁺导致Zr-Mo膜出现更为严重的损伤现象;离子注入的表面溅射效应可使膜面晶粒边界逐渐刻蚀退让,导致膜面更加光滑、细致;He⁺、H⁺ 离子协同注入可使Zr-Mo膜晶格发生畸变,注入期间未使Zr-Mo膜发生吸H相变生成氢化物。     

斜入射离子束辅助沉积对类金刚石薄膜结构影响的分子动力学模拟

采用分子动力学（MD）模拟方法,从原子尺度上研究了离子束辅助沉积（IBAD）类金刚石（DLC）薄膜过程中离子束入射角对薄膜结构的影响.重点讨论了不同的离子束入射角所对应的薄膜表面模型,平均密度和sp³键含量.结果表明,离子束斜入射加强了入射原子的水平动能,从而加强了原子水平迁移;Ar离子斜入射时C原子迁移率均比垂直入射大,薄膜密度和sp³键含量都比垂直入射小.不同的离子束入射角随着到达比和入射能的变化,对薄膜结构的影响不同.离子束斜入射时可以得到不同结构的膜. 关键词： 类金刚石薄膜 入射角 离子束辅助沉积 分子动力学模拟     

Study on the orientation of silver films by ion-beam assisted deposition

Low energy ion beam assisted deposition (IBAD) was employed to prepare Ag films on Mo/Si (100) substrate. It was found that Ag films deposited by sputtering method without ion beam bombardment were preferred (111) orientation. When the depositing film was simultaneously bombardment by Ar⁺ beam perpendicular to the film surface at ion/atom arrival ratio of 0.18, the prepared films exhibited weak (111) and (200) mixed orientations. When the direction of Ar⁺ beam was off-normal direction of the film surface, Ag films showed highly preferred (111) orientation. Monte Carlo method was used to calculate the sputtering yields of Ar⁺ ions at various incident and azimuth angles. The effects of channeling and surface free energy on the crystallographic orientation of Ag films were discussed.     

Self-organized dot patterns on Si surfaces during noble gas ion beam erosion

The erosion of target materials with energetic ions can lead to the formation of patterns on the surface. During low-energy (?2000 eV) noble gas (Ne⁺, Ar⁺, Kr⁺, Xe⁺) ion beam erosion of silicon surfaces dot patterns evolve on the surface. Dot structures form at oblique ion incidence of 75° with respect to surface normal, with simultaneous sample rotation, at room temperature. The lateral ordering of dots increases while the dot size remains constant with ion fluence, leading to very well ordered dot patterns for prolonged sputtering. Depending on ion beam parameters, dot nanostructures have a mean size from 25 nm up to 50 nm, and a mean height up to 15 nm. The formation of dot patterns depends on the ion/target mass ratio and on the ion energy. The temporal evolution and the lateral ordering of these nanostructures is studied using scanning force microscopy (AFM).     

Nano- and micro-scale patterning of Si (1 0 0) under keV ion irradiation

Evolution of Si (1 0 0) surface under 100 keV Ar⁺ ion irradiation at oblique incidence has been studied. The dynamics of surface erosion by ion beam is investigated using detailed analysis of atomic force microscopy (AFM) measurements. During an early stage of sputtering, formation of almost uniformly distributed nano-dots occurs on Si surface. However, the late stage morphology is characterized by self-organization of surface into a regular ripple pattern. Existing theories of ripple formation have been invoked to provide an insight into surface rippling.     

Formation of nanodots on oblique ion sputtered InP surfaces

Using a field emission gun based scanning electron microscopy, we report the formation of nanodots on the InP surfaces after bombardment by 100 keV Ar⁺ ions under off-normal ion incidence (30° and 60° with respect to the surface normal) condition in the fluence range of 1 × 10¹⁶ to 1 × 10¹⁸ ions cm⁻². Nanodots start forming after a threshold fluence of about 1 × 10¹⁷ ions cm⁻². It is also seen that although the average dot diameter increases with fluence the average number of dots decreases with increasing fluence. Formation of such nanostructured features is attributed due to ion-beam sputtering. X-ray photoelectron spectroscopy analysis of the ion sputtered surface clearly shows In enrichment of the sputtered InP surface. The observation of growth of nanodots on the Ar⁺-ion sputtered InP surface under the present experimental condition matches well with the recent simulation results based on an atomistic model of sputter erosion.     

SEM and XPS studies of nanohole arrays on InP(1 0 0) surfaces created by coupling AAO templates and low energy Ar ion sputtering

The aim of the present study is to demonstrate the feasibility to form well-ordered nanoholes on InP(1 0 0) surfaces by low Ar⁺ ion sputtering process in UHV conditions from anodized aluminum oxide (AAO) templates. This process is a promising approach in creating ordered arrays of surface nanostructures with controllable size and morphology. To follow the Ar⁺ ion sputtering effects on the AAO/InP surfaces, X-ray photoelectron spectroscopy (XPS) was used to determine the different surface species. In_4d and P_2p core level spectra were recorded on different InP(1 0 0) surfaces after ions bombardment. XPS results showed the presence of metallic indium on both smooth InP(1 0 0) and AAO/InP(1 0 0) surfaces. Finally, we showed that this experiment led to the formation of metallic In dropplets about 10 nm in diameter on nanoholes patterned InP surface while the as-received InP(1 0 0) surface generated metallic In about 60 nm in diameter.     

ISS measurement of surface composition of AuCu alloys by simultaneous ion bombardments with Ar+ and He + ions

Surface composition of Au-Cu(43 at%) alloy under 1.5–5 keV argon ion bombardment has been investigated by ion scattering spectroscopy (ISS). In this experiment, we adopted a specific technique to use mixed He⁺ and Ar⁺ ions as primary beam in order to perform sputtering (Ar⁺) and ISS measurement (He⁺) simultaneously. The outermost atom layer of Au-Cu alloys under Ar⁺ ion bombardment is Au-rich leading to the conclusion that Ar⁺ ion bombardment of AuCu alloys causes the preferential sputtering of Cu atoms, resulting in a Au-rich outermost atom layer and a depletion layer of Au atoms beneath the outermost atom layer due to ion-beam-enhanced surface segregation. This result explains the experimental results obtained by AES as well.     

Morphological and micro-Raman investigations on Ar-ion irradiated nanostructured GaAs surface

Low energy Ar⁺-ion irradiation at normal incidence is used to fabricate nanostructured GaAs surface. Atomic force microscopy (AFM) images reveal the formation of GaAs surface nanodots with an average size of about 25-35 nm. The swelling of irradiated surface is observed at a higher energy due to the ion beam-induced porosity in the amorphized GaAs surface. Micro-Raman scattering shows a gradual increase in the downward shift and line shape broadening of optical phonon modes from the nanostructured GaAs prepared with increasing ion dose and beam energy. The rapid broadening of the transverse-optical phonon mode at a higher energy and dose represents the onset of plastic deformation of the irradiated surface. Furthermore, the influence of rapid thermal annealing (RTA) shows a reverse LO and TO phonon peakshift and the change in the lineshape due to reduction of the amorphous disorder.     

Broad band light-emitting nanostructured substrates by ion beam irradiation of lithium fluoride crystals

We present experimental results on simultaneous surface nanostructuring and optical activation of lithium fluoride crystals by 800 eV off-normal Ar⁺ sputtering. Our data demonstrate that the formation of periodic nanostructures is accompanied by the efficient production of stable electronic defects, optically active in the green and red parts of the visible spectra, thus providing the possibility to conceive and fabricate advanced insulating substrates.     

Nanostructures on GaAs surfaces due to 60 keV Ar+-ion beam sputtering

The effect of 60 keV Ar⁺-ion beam sputtering on the surface topography of p-type GaAs(1 0 0) was investigated by varying angle of incidence of the ion (0–60°) with respect to substrate normal and the ion fluence (2 × 10¹⁷–3 × 10¹⁸ ions/cm²) at an ion flux of 3.75 × 10¹³ ions/cm²-s. For normal incidence and at a fluence of 2 × 10¹⁷ ions/cm², holes and islands are observed with the former having an average size and density of 31 nm and 4.9 × 10⁹ holes/cm², respectively. For 30° and 45° off-normal incidence, in general, a smooth surface appears which is unaffected by increase of fluence. At 60° off-normal incidence dots are observed while for the highest fluence of 3 × 10¹⁸ ions/cm² early stage of ripple formation along with dots is observed with amplitude of 4 nm. The applicability and limitations of the existing theories of ion induced pattern formation to account for the observed surface topographies are discussed.     

The influence of ion bombardment on emission properties of small dust grains

Dust grains that are present in many plasma and vacuum systems and in the space usually carry a non-negligible charge. Their charging significantly depends on surface properties of the grain material. In cold plasma, charging is mainly given by electron attachment, nevertheless, when plasma becomes hot, other processes (secondary electron emission, field emission, etc.) take place. Emission properties of the grain surface could be modified by grain baking or by ion bombardment. Our study is carried out at the dust charging experiment dealing with a single dust grain electro-dynamically levitated in a 3D quadrupole trap. The grain can be exposed to the ion beam in the energy range of 100 eV–5 keV and to the electron beam in the energy range of 100 eV–10 keV. We have chosen He⁺ and Ar⁺ ions for the surface treatment and the observed influence on the surface properties is discussed in terms of secondary emission. A non-negligible shift of the secondary electron emission yield, as well as a change of energy distribution of secondary electrons, were measured after Ar⁺ bombardment. A preliminary study suggests that the effects of He⁺ and Ar⁺ are comparable.