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1.
Two 1Πg states of Na2 for v≤13 have been observed by using optical-optical double resonance (OODR) fluorescence excitation spectroscopy. The intermediate levels in B1Πu state are identified by the numerical calculations with the molec-ular constants for B1Πu←X1Σg+ transitions and confirmed by the complemen-tary A1Σg+←X1Σg+ polarization spectra. Absolute vibrational numberings of the (6d)1Πg and (7d)1Πg states are determined by comparing the experimental OODR excitation intensities with the simulated Franck-Condon factors. The Dnnham coef-ficients and the Rydberg-Klein-Rees (RKR) potential energy curves of the (6d)1Πg, (7d)1Πg states are reported.  相似文献   

2.
Based on the scaling rule: R(T, H, θ) = R(T, h), where h = H(sin2θ+cos2θ/γ2)1/2 and θ is field angle with respect to the ab-plane, the scaling approach is performed to examine the c-axis resistances of single crystalline La1.86Sr0.14CuO4 as functions of field and its orientation at different temperatures. The anisotropy parameter γ of the system is extracted from the scaling approach, but shows an unusual temperature-dependent behavior, which is not expected by conventional theory. A phenomenological explanation of this temperature dependence is presented.  相似文献   

3.
The electrical conductivity of single crystal lithium niobate (LiNbO3) was determined as a function of temperature for various oxygen partial pressures. The electrical conductivity is proportional to Po2−1/4 which can be explained by a defect equilibrium involving singly ionized oxygen vacancies and electrons.

Measurements of electrical transport numbers at 1000°K show the electrical conductivity of LiNbO3 to be ionic at one atmosphere of oxygen and electronic at low oxygen partial pressures.

Thermoelectric measurements indicate that LiNbO3 at low oxygen partial pressures is n-type and that the concentration of electrons at 1000°K and in an atmosphere of 50% C0/50% CO2a is 4 × 1017cm3 with a mobility of 1.7 cm2V sec.

The diffusion of oxygen in LiNbO3 was determined as a function of temperature at an oxygen partial pressure of 70 Torr. by measuring O18/O16 isotope exchange with the gas phase as a function of time. The diffusion data may be represented by D = 3.03 × 10−6 exp (−29.4 kcal mole−1/RT)cm2sec. Consideration of the Nernst-Einstein relation for oxygen and the variation in conductivity with Li2O activity indicate that the ionic conduction is caused by transport of lithium ions.  相似文献   


4.
Tracer diffusion of 18O in dense, polycrystalline La1−xSrxCoO3 for x = 0.1 has been measured in the temperature range 400 to 600 °C and at 500 °C for x = 0.2 at an oxygen partial pressure of 1 × 105 Pa. Depth profiles were obtained by secondary ion mass spectrometry. The diffusion coefficient for La0.9Sr0.1CoO3 is given by D = (17–247) exp[(−232 ± 8 kJ/mole)/RT] cm2/s. This value is several orders of magnitude lower than D extrapolated from the results for x = 0.2 measured in the 700–900 °C temperature range. One possible explanation for the discrepancy is that the two measurements reflect different diffusion paths. As expected, La0.8Sr0.2CoO3 exhibits a higher diffusivity at 500 °C than does La0.9Sr0.1CoO3.  相似文献   

5.
In this paper, by using resonance enhanced (2+1) multiphoton ionization (REMPI) of AsH3 and detecting the daughter molecular ions AsH+ and As+, a long progression discrete structure was obtained from 267 to 291 nm, which obeys the formula ν0(cm-1)=68875.3+504.1v′2+5.26v′22. Analysis of the spectrum has revealed that it belongs to 4d Rydberg state transition. Our assignment yields the 4d Rydberg state parameters Te′=67881.1 cm-1, ωe′=495.1 cm-1 and δ=0.962. Finally the 4d Rydberg state structure of AsH3 was discussed.  相似文献   

6.
We present here the detailed analysis of the magnetic behavior of the Co0.53Ga0.47 alloy, especially at temperatures above the freezing temperature Tf = 10 K. Low field static magnetization measurements were performed by using the SQUID magnetometer in the temperature range 5–65 K and magnetic fields up to 100 Oe. The temperature dependence of the field cooled susceptibility πFC(T) at T > Tf has an anomaly, which is displayed in the double change of the curvature near Ts = 24 K. The data of magnetization MFC in an external field H lie on a universal curve MFC(H/T) at temperatures Tf < T < Ts. The plots of π-1FC(T) and non-linear magnetic susceptibility πnlFC(T-3) are linear lines in the temperature range TfTs. The strong deviation of π-1FC(T) and πnlFC(T-3) from straight line, taking place at T Ts, indicates that Ts is an upper temperature limit of the classical superparamagnetic behavior with the constant cluster moment. The results suggest that such phenomena may be fairly universal for spin glasses.  相似文献   

7.
Single crystals of Ba, Sr M-type hexagonal ferrites were prepared by ion exchange in Ba, Sr containing molten salts from single crystals of β″ -ferrites. A fast diffusion of the divalent Ba2+, Sr2+ is observed leading to a non-stoichiometric M-type ferrite with chemical formula: Ba1+xFe10.5Co0.25O17+x (0 ≤ x ≤ 0.25). x depending on the exchange reaction time. Saturation magnetization ranges from 19 to 64 emu/g depending on exchange conditions. The Curie temperature is (470 ± 5)°C. An easy axis direction (Ms c) has been determined in all cases. The observed anisotropy is considerably lower than that of M ferrite. The calculated anisotropy constants are, in 106 erg/cm3, K1 = 0.8 and K2 = 1.0 at room temperature.  相似文献   

8.
Let (P) be the moduli space of irreducible connections of a G-principal bundle P over a closed Riemannian spin manifold M. Let DA be the Dirac operator of M coupled to a connection A of P and f a smooth function on M. We consider a smooth variation A(u) of A with tangent vector ω and denote Tω:= (DA(u)f) (u=0. The coefficients of the asymptotic expansion of trace (Tω · e-t(DAf)2) near t=0 define 1-forms a(k)f, K=0, 1, 2, … on (P). In this paper we calculate aa(0)f, a(1)f, a(2)f and study some of their properties. For instance using the 1-form a(2)f for suitable functions f we obtain a foliation of codimension 5 of the space of G-instantons of S4.  相似文献   

9.
Magnetization σ vs. temperature T was measured from 80 to 700 K in polycrystalline DyFe3 in a magnetic field H = 10 kOe. From σ = f(T), the Curie temperature was determined. Also, σ was measured vs. H from 0 to 70 kOe at 4.2 K. Magnetization at saturation σ0 at 4.2 K and the magnetic moment of DyFe3 were also determined. First observations of domain structure in DyFe3 are reported. The mean domain with is determined in its dependence on the grain size . The magnetocrystalline anisotropy constant of polycrystalline DyFe3 is determined as K1 = -1.2×107 erg/cm3.  相似文献   

10.
研究了四价铬离子掺杂的MgCaBa-铝酸盐玻璃在近红外区的发射光谱,既有源于1E—3A2跃迁,位于1.18μm处的窄带,又有源于3T23A2范围在1.1~1.4 μm内的宽带,利用ASE(Amplified Spontaneous Emission)方法研究了其增益特性,测量了在 632.8nm激发下不同激发长度下的发射光谱,得到其光学增益系数在1.18μm和1.24 μm处分别为BE=(0.7±0.04)mm-1BT=(0.05±0.005)mm-1,并根据这种材料的光谱性质,对其作为近红外可调谐激光介质的可能作出评估。  相似文献   

11.
The hydrogen content and depth profile in a-Si1-xCx:H films were measured by the elastic recoil detection (ERD) technique. It is shown that the hydrogen content changes from 15 to 50 at% with increasing carbon content x. For x<0.4 the hydrogen content increases mainly due to the increase of the Si-CH3 contribution and for x > 0.4 due to C-H bonds. By combining the ERD and IR results, the proportionality between the number of Si-CH3 bonds and the intensity of IR absorption due to the Si-CH3 rocking mode vibration is ascertained. The proportionality constant is found to be ArocSi-CH3 = 5 × 1019 cm-2.  相似文献   

12.
In this work, the investigation of the interface state density and series resistance from capacitance–voltage (CV) and conductance–voltage (G/ωV) characteristics in In/SiO2/p-Si metal–insulator–semiconductor (MIS) structures with thin interfacial insulator layer have been reported. The thickness of SiO2 film obtained from the measurement of the oxide capacitance corrected for series resistance in the strong accumulation region is 220 Å. The forward and reverse bias CV and G/ωV characteristics of MIS structures have been studied at the frequency range 30 kHz–1 MHz at room temperature. The frequency dispersion in capacitance and conductance can be interpreted in terms of the series resistance (Rs) and interface state density (Dit) values. Both the series resistance Rs and density of interface states Dit are strongly frequency-dependent and decrease with increasing frequency. The distribution profile of RsV gives a peak at low frequencies in the depletion region and disappears with increasing frequency. Experimental results show that the interfacial polarization contributes to the improvement of the dielectric properties of In/SiO2/p-Si MIS structures. The interface state density value of In/SiO2/p-Si MIS diode calculated at strong accumulation region is 1.11×1012 eV−1 cm−2 at 1 MHz. It is found that the calculated value of Dit (≈1012 eV−1 cm−2) is not high enough to pin the Fermi level of the Si substrate disrupting the device operation.  相似文献   

13.
The current–voltage (IV) and capacitance–voltage (CV) characteristics of H-terminated Pb/p-Si/Al contacts fabricated by us have been measured in the temperature range of 77–300 K. The experimental values of the barrier height (BH) Φbo and the ideality factor n for the device range from 0.674 and 1.072 eV (at 300 K) to 0.352 and 2.452 eV (at 77 K), respectively. The ideality factors become larger with lowering temperature while the barrier height decreases. The Φbo(n) plot shows a linear dependence in the temperature range of 77–300 K that can be explained by the barrier inhomogeneity at the metal/semiconductor interface. The extrapolation of the linear Φbo(n) plot to n = 1 has given a homogeneous barrier height of approximately 0.713 eV for the Pb/p-Si(1 0 0) contact. A Φbo versus 1/T plot was drawn to obtain evidence of a Gaussian distribution of the BHs, and values of and σs = 80.5 mV for the mean BH and zero-bias standard deviation have been obtained from this plot, respectively. Then, a modified versus 1/T plot gives and A* as 0.828 eV and 54.89 A/cm2 K2, respectively. Furthermore, an average value of −0.687 meV/K for the temperature coefficient has been obtained, the value of −0.687 meV/K for hydrogen terminated p-type Si differs from those given for p-type Si without hydrogen termination in the literature.  相似文献   

14.
The 59.5 keV Mössbauer resonance of 237Np has been measured in Np3S5 at 77 and 4.2 K. At 77 K, two different quadrupolar splittings are observed. The first one (δ1 = −5(1) mm sec−1/NpAl2) is assigned to the Np4+ ions and the second one (δ2 = 28(1) mm sec−1/NpAl2) is assigned to the Np3+ ions. At 4.2 K the spectrum gives a ratio of areas S(Np3+)/S(Np4+) of 2.0. These results clearly confirm the crystallographic data of this mixed-valence material.  相似文献   

15.
Data on the absorption coefficient of H2O in binary mixture with N2 in UV region of spectra are presented. With the use of the high sensitivity photoacoustic spectrometer, the following values of the absorption coefficient were found: 2.3×10-9cm-1·Pa-1(λ=255 nm), 0.9×10-9 cm-1·Pa-1(λ=271 nm), and 1.6×10-9cm-1 ·Pa-1(λ=289 nm).  相似文献   

16.
The thermal expansion of Lu2Fe17−xSix solid solutions has been measured by X-ray powder diffraction. The magnetic ordering in all compounds within the homogeneity range (x3.4) is accompanied by a large spontaneous volume magnetostriction, distributed anisotropically over the principal axes of the hexagonal crystal structure. The volume effect ωs in the ground state reaches 14.7×10−3 in Lu2Fe17 and decreases monotonously to 8.9×10−3 for x=3.4, following the reduction of magnetic moment. Despite a still large ωs, the Invar behavior observed in Lu2Fe17 changes to a positive thermal expansion for x>1 due to an increasing Curie temperature.  相似文献   

17.
YBa2Cu3O7−δ (YBCO) films with high critical current density (Jc) were successfully fabricated on nickel tapes buffered with epitaxial NiO. NiO was prepared on the textured nickel tape by the surface-oxidation epitaxy (SOE) method. We have reported so far a critical temperature (Tc) of 87 K and Jc=4–6×104 A/cm2 (77 K, 0 T) for the YBCO films on NiO/Ni tapes. To enhance the superconducting properties of the YBCO films on the SOE-grown NiO, depositions of thin oxide cap layers such as YSZ, CeO2, and MgO on NiO were investigated. These oxide cap layers were epitaxially grown on NiO and provided the template for the epitaxial growth of YBCO films. Substantially improved data of Tc=88 K and Jc=3×105 A/cm2 (77 K, 0 T) and 1×104 A/cm2 (77 K, Hc, 4 T) were obtained for YBCO film on NiO, by using a MgO cap layer with a thickness of 50 nm. The method described in this paper is a simple way to produce long YBCO tape conductors with high-Jc values.  相似文献   

18.
A C.W. multi-mode dye laser is used to obtain by optical pumping an orientation of the 2p5 3s3P0 (F = 3/2) state of 21Ne. A magnetic resonance experiment leads to the measurement of the g factor g (3P0) = 3.027 (8) × 10−4 to be compared with the theoretical prediction (3.025(6) × 10−4). One obtains also the metastability exchange cross section σ(3P0) = 18.4 ± 4 Å2 for collisions between metastable (3P0) Ne atoms and ground state Ne atoms. This result is compared with other measurements and theoretical evaluation.  相似文献   

19.
余庚华  刘鸿  赵朋义  徐炳明  高当丽  朱晓玲  杨维 《物理学报》2017,66(11):113101-113101
利用相对论多组态Dirac-Hartree-Fock方法研究了Mg原子基态到低激发态~1S_0-~1P_1和~1S_0-~3P_1两条跃迁谱线的同位素位移参数,包括正常质量位移系数,特殊质量位移系数和场位移因子,并计算了~(24)Mg,~(25)Mg和~(26)Mg三个稳定同位素的同位素位移.在计算中采用了一种受限制的双电子激发模式,并将同位素位移计算结果与已有的实验测量和理论计算结果进行了对比.结果表明,用本文的研究方法计算的Mg原子同位素位移与其他理论结果和实验测量值十分符合.本文的计算结果可以为~(20-40)Mg同位素位移测量实验提供必要的参考,所用的计算方法也可以应用到其他类Mg体系(核外电子数等于12的离子)等多电子离子的光谱结构计算和同位素位移的研究中.  相似文献   

20.
Y. B. Zhao  R. Gomer 《Surface science》1992,260(1-3):129-138
The behavior of oxygen on Pd1/W(110) has been investigated from 25 to 200 K by thermal desorption, UPS, XPS, and work function measurements. At 25 K only dioxygen species are present. A weakly bound O2layer, containing O2/Pd = 0.31 or 4.4 × 1014 O2 molecules/cm2 is desorbed at 35 K, leaving a coverage of O2/Pd = 0.35 or 5 × 1014 O2 molecules/cm2. Heating to 200 K results in desorption of molecular O2 as well as conversion to O, with O/Pd = 0.3. The molecular states, except the very weakly bound one, have high dipole moments with electron transfer to O2, and thus correspond to Superoxide and peroxide species. These have UPS spectra quite different from physisorbed O2. At 90 K adsorption is still mostly molecular with a sticking coefficient s near unity. At 200 K, adsorption is atomic with an initial s0 = 0.8. This must be contrasted with Cu1/W(110) where s0 is unity even at 300 K. The difference can be explained by the much better size match of Pd and W, than Cu and W which makes it easier for Cu to take up momentum of impinging O2 molecules.

The behavior of oxygen on Pd1/W(110) is very similar to that on bulk Pd(111), suggesting that for oxygen the former surface resembles bulk Pd. This is not so for CO adsorption which is much weaker on Pd1/W(110) than on bulk Pd. The reasons for this difference are not presently understood.  相似文献   


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