Dependence of ablation threshold and LIPSS formation on copper thin films by accumulative UV picosecond laser shots

The ablation threshold and Laser-induced periodic surface structure (LIPSS) formation on copper thin film were investigated using a picosecond laser (Nd:YAG laser: 266 nm, 42 ps, 10 Hz). We show that the ablation threshold varies with respect to the number of laser shots (N) on two different substrates. The single-shot ablation threshold was estimated to be close to 170 ± 20 mJ/cm². The incubation coefficient was estimated to be 0.68 ± 0.03 for copper thin films on silicon and glass substrates. In addition, morphology changes of the ablated regions, in the same spot area, were studied as a function of fluence and number of laser shots. An intermediate structure occurred with a mix of low spatial frequency LIPSS (LSFL), high spatial frequency LIPSS (HSFL) and regular spikes at a fluence F < 250 mJ/cm² and 1,000 < N ≤ 10.000 shots. LSFL was observed with a spatial period close to the irradiation wavelength and an orientation perpendicular to the laser polarization, and HSFL with a spatial period of ～120 nm and a parallel orientation. Lastly, the global relationship between the laser parameters (i.e. fluence and number of shots) and LIPSS formation was established in the form of a 2D map.     

The distributions of enhancement factors in close‐packed and nonclose‐packed surface‐enhanced Raman substrates

A method employing photochemical hole burning, previously developed to measure the distribution of Raman enhancement factors on a nanostructured substrate for surface‐enhanced Raman scattering, is used to compare the enhancement distributions of benzenethiol adsorbed on substrates optimized for 532 nm laser excitation consisting of close‐packed (CP) or nonclose‐packed (NCP) nanospheres. The ensemble‐averaged Raman enhancement factor was 2.8 times smaller for the NCP substrate. The measured distributions revealed additional information. For instance, 92% of the molecules on the CP substrate and 93.6% of the molecules on the NCP substrate had Raman enhancements below average. The minimum enhancements on both substrates were ~10⁴, but on the NCP substrate the maximum enhancement was 1.2 × 10⁸, whereas on the CP substrate the maximum was 2 × 10¹⁰. The Ag‐coated nanospheres form hemisphere‐on‐cylinder mushroom‐like structures on both lattices, but on the NCP lattice, one third of the molecules are on the flat regions between the mushrooms. The flats on the NCP lattice have enhancements of ~10⁴, showing they are part of a resonant plasmonic structure. The highest NCP enhancements of ~10⁸ are tentatively associated with regions at the bases of the mushrooms, whereas the highest CP enhancements of 2 × 10¹⁰ are tentatively associated with gaps between nanospheres where 0.0025% of the molecules reside. Copyright © 2011 John Wiley & Sons, Ltd.     

The growth of Y2SiO5:Ce thin films with pulsed laser deposition

Y₂SiO₅:Ce phosphor thin films were grown onto Si(100) substrates with pulsed laser deposition (PLD) using a 248-nm KrF excimer laser. Process parameters were varied during the growth process and the effect on the surface morphology and cathodoluminescence (CL) was analysed. The process parameters that were changed included the following: gas pressure (vacuum (5×10⁻⁶ Torr), 1×1⁻² Torr and 1 Torr O₂), different gas species (O₂, Ar and N₂ at a pressure of 455 mTorr), laser fluence (1.6±0.1 J cm⁻² and 3.0±0.3 J cm⁻²) and substrate temperature (400 and 600°C). The surface morphology was investigated with atomic force microscopy (AFM). The morphology of the thin films ablated in vacuum and 10 mTorr ambient O₂ showed more or less the same trend. An increase in the pressure to 1 Torr O₂, however, showed a definite increase in deposited particle sizes. Ablation in N₂ gas resulted in small particles of 20 nm in diameter and ablation in O₂ gas produced bigger particles of 20, 30 and 40 nm as well as an agglomeration of these particles into bigger size clusters of 80 to 100 nm. Ablation in Ar gas led to particle sizes of 30 nm and the particles were much more spherically defined and evenly distributed on the surface. The higher fluence deposition led to bigger particle and grain sizes as well as thicker layers with respect to the lower fluence. The particle sizes of the higher fluence vary mainly between 130 and 140 nm and the lower fluence sizes vary between 50 and 60 nm. The higher fluence particles consist of smaller particles ranging from 5 to 30 nm as measured with AFM. The surface structure of the thin film ablated at 400°C substrate temperature is less compact (lesser agglomeration of particles than at 600°C). The increase in substrate temperature definitely resulted in a rougher surface layer. CL was measured to investigate the effect of the surface morphology on the luminescent intensities. The increased O₂ ambient (1 Torr) resulted in a higher CL intensity compared to the thin films ablated in vacuum. The thin film ablated in Ar gas showed a much higher CL intensity than the other thin films. Ablation at a high fluence resulted in a higher CL intensity. The higher substrate temperature resulted in better CL intensities. The more spherically shaped particles and rougher surface led to increase CL intensities.     

SEM and Raman spectroscopy analyses of laser-induced periodic surface structures grown by ethanol-assisted femtosecond laser ablation of chromium

The effect of fluence and pulse duration on the growth of nanostructures on chromium (Cr) surfaces has been investigated upon irradiation of femtosecond (fs) laser pulses in a liquid confined environment of ethanol. In order to explore the effect of fluence, targets were exposed to 1000 pulses at various peak fluences ranging from 4.7 to 11.8?J?cm^–2 for pulse duration of ～25?fs. In order to explore the effect of pulse duration, targets were exposed to fs laser pulses of various pulse durations ranging from 25 to 100?fs, for a constant fluence of 11.8?J?cm^–2. Surface morphology and structural transformations have been analyzed by scanning electron microscopy and Raman spectroscopy, respectively. After laser irradiation, disordered sputtered surface with intense melting and cracking is obtained at the central ablated areas, which are augmented with increasing laser fluence due to enhanced thermal effects. At the peripheral ablated areas, where local fluence is approximately in the range of 1.4–4?mJ?cm^–2, very well-defined laser-induced periodic surface structures (LIPSS) with periodicity ranging from 270 to 370?nm along with dot-like structures are formed. As far as the pulse duration is concerned, a significant effect on the surface modification of Cr has been revealed. In the central ablated areas, for the shortest pulse duration (25?fs), only melting has been observed. However, LIPSS with dot-like structures and droplets have been grown for longer pulse durations. The periodicity of LIPSS increases and density of dot-like structures decreases with increasing pulse duration. The chemical and structural modifications of irradiated Cr have been revealed by Raman spectroscopy. It confirms the formation of new bands of chromium oxides and enol complexes or Cr-carbonyl compounds. The peak intensities of identified bands are dependent upon laser fluence and pulse duration.     

The growth of nanoscale periodic and dot-like structures on the surface of stainless steel with femtosecond laser pulses in the dry and wet ambient environment

The present work deals with growth of nanoscale periodic and dot-like structures on the surface of stainless steel (SS) by the irradiation of femtosecond laser pulses. For this purpose Ti: Sapphire femtosecond laser pulses (wavelength of 800 nm, pulse length of 25 fs and pulse repetition rate of 1 kHz) were employed in a dry (air) and liquid confined (deionized water and ethanol) environments. The targets were exposed to 1000 succeeding pulses for various fluences ranging from 50 to 150 mJ?cm^?2. Nanoscale structures including ripples, and dots were observed by SEM analysis. The growth and dependence of structure-formation on the ambient environment and laser fluence in both central as well as peripheral ablated areas is systematically investigated. The development of nanostructures and nanoripples is correlated with structural analysis carried out by micro Raman spectroscopy.     

Electrode patterning on PEDOT:PSS thin films by pulsed ultraviolet laser for touch panel screens

Laser dry etching by a laser driven direct writing apparatus has been extensively used for the micro- and nano-patterning on the solid surface. The purpose of this study is to pattern the PEDOT:PSS thin film coated on the soda-lime glass substrates by a nano-second pulsed ultraviolet laser processing system. The patterned PEDOT:PSS film structure provides the electrical isolation and prevents the electrical contact from each region for capacitive touch screens. The surface morphology, geometric dimension, and edge quality of ablated area after the variety of laser patternings were measured by a 3D confocal laser scanning microscope. After the single pulse laser irradiation, the ablation threshold of the PEDOT:PSS film conducted by the nano-second pulsed UV laser was determined to be 0.135±0.003 J/cm². The single pulse laser interacted region and the ablated line depth increased with increasing the laser fluence. Moreover, the inner line width of ablated PEDOT:PSS films along the patterned line path increased with increasing the laser fluence but the shoulder width increased with decreasing fluence, respectively. The clean, smooth, and straight ablated edges were accomplished after the electrode patterning with the laser fluence of 1.7 J/cm² and 90 % overlapping rate.     

Laser ablation of polymers using 395 nm and 790 nm femtosecond lasers

We compared a Ti:sapphire fs laser (790 nm) with a second harmonics (395 nm) fs laser, and then mixed them for ablating polyethylene (PE). Compared to the 790 nm fs laser, the 395 nm fs laser harmonics could etch PE faster. However, isolated carbon was formed on the ablated surface, in addition to C=O and C=C-H bonds. When we mixed a faint beam of the 395 nm fs laser harmonics with the 790 nm fs laser, the etching depth became even deeper. Moreover, the chemical composition of the ablated surface remained unchanged. At a total laser fluence of 80 mJ/cm², the most suitable laser fluences for the 395 nm fs laser harmonics and the 790 nm fs laser were found to be approximately 2 and 78 mJ/cm² respectively. PACS 81.65.Cf     

Uniform plasmonic near-field nanopatterning by backward irradiation of femtosecond laser

We present localized optical field distribution properties in the vicinity of gold particles on a silicon substrate by backward and forward irradiation. It is technically difficult to fabricate nanostructures on the surface by a conventional forward laser incident to the substrate because gold nanoparticles easily aggregate to form double-layered particle arrays. We calculated enhanced optical field properties in order to pattern the substrate surface only with a template of the bottom-layered particle arrays in the case that the backward irradiation of a femtosecond laser is used in the system of aggregated double-layered gold nanoparticle arrays. With the backward irradiation, the optical field intensity in the substrate for the double-layered hexagonal arrays is found to be only 30% lower than the mono-layered system. Moreover, a near field cannot be generated with the forward irradiation. As a result, only the backward irradiation scheme is found to be effective for uniform surface nanopatterning at enhanced plasmonic near-field zones.     

Double-peak droplet mass distribution observed during sub-ps laser ablation of Si targets

The angular distribution of the ablated material was studied during sub-ps Si laser ablation deposition using a special hemicylindrical substrate holder and different laser fluences ranging between 0.4 and 1.7 J/cm². Scanning electron microscopy analysis of the deposited films showed that, independent of the fluence, the distribution of the deposited droplets presents two maxima. The first maximum corresponds to the average plume deflection angle value due to the local surface orientation produced by the preferential etching process. The second maximum is observed approximately at 45° with respect to the normal of the target surface, and is related to the phase explosion products that expand along the incident laser beam direction. The investigation of the twofold distribution of the sub-μm size deposited droplets is important to improve the quality of the deposited coatings. PACS 81.15.Fg; 68.55.Jk; 79.20.Ds     

Biocompatible film deposition by using Nd:YAG pulsed laser

A Nd:YAG laser operating at the fundamental wavelength (1064 nm) and at the second harmonic (532 nm), with 9 ns pulse duration, 100–900 mJ pulse energy, and 30 Hz repetition rate mode, was employed to ablate in vacuum (10^?6 mbar) biomaterial targets and to deposit thin films on substrate backings. Titanium target was ablated at the fundamental frequency and deposited on near-Si substrates. The ablation yield increases with the laser fluence and at 40 J/cm ² the ablation yield for titanium is 1.2×10¹⁶ atoms/pulse. Thin film of titanium was deposited on silicon substrates placed at different distance and angles with respect to the target and analysed with different surface techniques (optical microscopy, scanning electron spectrosopy (SEM), and surface profile).

Hydroxyapatite (HA) target was ablated to the second harmonic and thin films were deposited on Ti and Si substrates. The ablation yield at a laser fluence of 10 J/cm ² is about 5×10¹⁴ HA molecules/pulse. Thin film of HA, deposited on silicon substrates placed at different distance and angles with respect to the target, was analysed with different surface techniques (optical microscopy, SEM, and Raman spectroscopy).

Metallic films show high uniformity and absence of grains, whereas the bio-ceramic film shows a large grain size distribution. Both films found special application in the field of biomaterial coverage.     

The Effect of a Silicon Substrate on the Directivity Pattern of Scattered Radiation of a Gold Nanospheroid and on Near-Field Polarization

We studied the radiation-directivity pattern and the near-field polarization of a spheroidal metallic nanoparticle located over a silicon substrate by interaction with a linearly and circularly polarized field. It is shown that the directivity pattern of the spheroidal particle near the silicon substrate becomes strongly asymmetric and forward scattering is predominant compared with the symmetric diagram of a particle in free space. The change of the near-field polarization of the nanoparticle in presence of the substrate is studied for different wavelengths in the vicinity of the plasmonic resonance. The near-field polarization is described using the generalized Stokes parameters, which allow pictorial visualization of results.     

Femtosecond laser ablation characteristics of nickel-based superalloy C263

Femtosecond laser (180 fs, 775 nm, 1 kHz) ablation characteristics of the nickel-based superalloy C263 are investigated. The single pulse ablation threshold is measured to be 0.26±0.03 J/cm² and the incubation parameter ξ=0.72±0.03 by also measuring the dependence of ablation threshold on the number of laser pulses. The ablation rate exhibits two logarithmic dependencies on fluence corresponding to ablation determined by the optical penetration depth at fluences below ∼5 J/cm² (for single pulse) and by the electron thermal diffusion length above that fluence. The central surface morphology of ablated craters (dimples) with laser fluence and number of laser pulses shows the development of several kinds of periodic structures (ripples) with different periodicities as well as the formation of resolidified material and holes at the centre of the ablated crater at high fluences. The debris produced during ablation consists of crystalline C263 oxidized nanoparticles with diameters of ∼2–20 nm (for F=9.6 J/cm²). The mechanisms involved in femtosecond laser microprocessing of the superalloy C263 as well as in the synthesis of C263 nanoparticles are elucidated and discussed in terms of the properties of the material.     

Study of laser fragmentation process of silver nanoparticles in aqueous media

Laser fragmentation of Ag nanoparticles in Ag hydrosol was studied by simultaneous measurements of the transmitted fluence of the incident laser beam and the time evolution of the surface plasmon extinction (SPE) spectra. The experiments showed that the laser fragmentation in a small volume of hydrosol proceeds during first 20 pulses and then reaches saturation. The value of the transmitted fluence corresponding to saturation increases with incident pulse fluence, but the impact of the first pulse applied to the hydrosols shows an optical limitation. Fluences above 303 mJ/cm² cause the formation of less stable, aggregating nanoparticles, while fluences below 90 mJ/cm² do not provide sufficient energy for efficient fragmentation. The interval of fluences between 90–303 mJ/cm² is optimal for fragmentation, since stable hydrosols constituted by small, non-aggregated nanoparticles are formed.     

Dispersion of nanospheres on large glass substrate by amorphous or polycrystalline silicon deposition for localized surface plasmon resonance

Nanosphere lithography is a cost-effective way to fabricate noble metal nanostructures for plasmonics. However, dispersing nanospheres on a large area of glass substrate is a difficulty encountered when transparent substrate is required in applications such as localized surface plasmon resonance or surface enhanced Raman spectroscopy. Because poly(diallyldimethyl ammonium chloride) (PDDA) on silicon surface introduces a force that can disperse nanospheres on silicon, in this article, we modify the glass surface through amorphous or polycrystalline silicon deposition and thus well disperse polystyrene or silica nanospheres over a glass area of more than 2 cm × 2 cm. Transmission loss of the glass substrate caused by amorphous or polycrystalline silicon deposition is analyzed with good agreement to experimental spectra, and localized surface plasmon resonance signals generated from the gold nanostructures fabricated on these substrates are measured and yield a sensitivity of 317 nm/RIU, which prove the feasibility and effectiveness of our method.     

Plasmon enhancement of optical absorption in ultra-thin film solar cells by rear located aluminum nanodisk arrays

In this work, in order to enhance the light absorption in one micron thick crystalline silicon solar cells, a back reflecting and rear located plasmonic nanodisk scheme is proposed. We investigate the scattering properties of aluminum nanostructures located at the back side and optimize them for enhancing absorption in the silicon layer by using finite difference time domain simulations. The results indicate that the period and diameters of nanodisks, thickness of spacer layer have a strong impact on short circuit current enhancements. The optimized Al nanoparticle arrays embedded in rear located SiO₂ layer enhance J _sc with an increase of 47% from the non-plasmonic case of 18.9 to 27.8 mA/cm² when comparing with a typical stack with a planar aluminum back reflector and a back reflector with plasmonic nanoparticles. This finding could lead to improved light trapping within a thin silicon solar cell device.     

Selective ablation of thin SiO<Subscript>2</Subscript> layers on silicon substrates by femto- and picosecond laser pulses

The selective ablation of thin (∼100 nm) SiO₂ layers from silicon wafers has been investigated by applying ultra-short laser pulses at a wavelength of 800 nm with pulse durations in the range from 50 to 2000 fs. We found a strong, monotonic decrease of the laser fluence needed for complete ablation of the dielectric layer with decreasing pulse duration. The threshold fluence for 100% ablation probability decreased from 750 mJ/cm² at 2 ps to 480 mJ/cm² at 50 fs. Significant corruption of the opened Si surface has been observed above ∼1200 mJ/cm², independent of pulse duration. By a detailed analysis of the experimental series the values for melting and breaking thresholds are obtained; the physical mechanisms responsible for the significant dependence on the laser pulse duration are discussed.     

Laser surface treatment of screen-printed carbon nanotube emitters for enhanced field emission

This paper investigates the surface treatment of screen-printed carbon nanotube (CNT) emitters using a 248 nm (KrF) excimer laser. The field emission characteristics of the CNT emitters are measured following irradiation using laser fluences ranging from 80 to 400 mJ/cm². The results show that the turn-on electric field, the current density, and the distribution of the emission sites are highly dependent on the value of the laser fluence and are optimized at a fluence of 150 mJ/cm². Two distinct laser fluence regimes are identified. In the low fluence regime, i.e. 80-150 mJ/cm², the surface treatment process is dominated by a photo ablation mechanism, which results in the gradual removal of the binding material from the cathode surface and leads to an improvement in the emission characteristics of the CNT cathodes with an increasing fluence. However, in the high fluence regime, i.e. 150-400 mJ/cm², the thermal ablation mechanism dominates; resulting in a removal of the CNTs from the cathode surface and a subsequent degradation in the emission characteristics.     

“Heterogeneous” versus “homogeneous” nucleation and growth of microcones on titanium surface under UV femtosecond-laser irradiation

Two separate sets of microcones were observed on titanium surface under various ablative 248-nm femtosecond-laser exposures near rough spallation crater edges and in crater centers, respectively. “Heterogeneous” nucleation of microcones occurred on crater edge spikes above the corresponding cumulative spallation thresholds, with their gradual growth proceeding through redeposition of the ablated matter. In contrast, quasi-periodical central microcones emerged through a “homogeneous” nucleation process owing to ablative surface instability, with average cone volume increasing exponentially versus the shot number over the broad fluence range until its stabilization, and logarithmically versus laser fluence at the different shot numbers above the instability threshold fluence of about 30 mJ/cm². The instability was assigned to a positive optical feedback, resulting from enhanced laser energy deposition and ablation within the inter-cone valleys, as previously suggested and demonstrated by our numerical modeling of near-surface electromagnetic intensity distribution.     

Short-pulse UV laser ablation of solid and liquid metals: indium

2 to 2.5 mJ/cm² when a 0.5 ps pulse is used instead of a 15 ns laser pulse. Measurements on liquid indium show a different behavior. With 15 ns laser pulses the threshold fluence is lowered by a factor of ∼3 from 100 mJ/cm² for solid indium to 30 mJ/cm² for liquid indium. In contrast, measurements with 0.5 ps laser pulses do not show any change in the ablation threshold and are independent of the phase of the metal at 2.5 mJ/cm². This behavior could be explained by thermal diffusion and heat conduction during the laser pulse and demonstrates in an independent way the energy lost into the material when long laser pulses are applied. Time-of-flight measurements to investigate the underlying ablation mechanism show thermal behavior of the ablated indium atoms for both ps and ns ablation and can be fitted to Maxwell-Boltzmann distributions. Received: 2 December 1996/Accepted: 11 December 1996     

Excimer-laser-assisted RF glow-discharge deposition of amorphous and microcrystalline silicon thin films

We combine the deposition of Hydrogenated amorphous Silicon (a-Si:H) by rf glow discharge with XeCl-excimer laser irradiation of the growing surface in order to obtain different kinds of silicon films in the same deposition system. In-situ UV-visible ellipsometry allows us to measure the optical properties of the films as the laser fluence is increased from 0 up to 180 mJ/cm² in separate depositions. For fixed glow-discharge conditions and a substrate temperature of 250° C we observe dramatic changes in the film structure as the laser fluence is increased. With respect to a reference a-Si:H film (no laser irradiation) we observe at low laser fluences (15–60 mJ/cm²) that the film remains amorphous but demonstrates enchanced surface roughness and bulk porosity. At intermediate fluences (80–165 m/Jcm²), we obtain an amorphous film with an enhanced density with respect to the reference film. Finally, at high fluences (165–180 mJ/cm²), we obtain microcrystalline films. The in-situ ellipsometry measurements are complemented by ex-situ measurements of the dark conductivity, X-ray diffraction, and Elastic Recoil Detection Analysis (ERDA). Simulation of the temperature profiles for different film thicknesses and for three laser fluences indicates that crystallization occurs if the surface temperature reaches the melting point of a-Si:H ( 1420 K). The effects of laser treatment on the film properties are discussed by taking into account the photonic and thermal effects of laser irradiation.Presented at LASERION 93, Munich, June 21–23, 1993