Ultrafast laser ablation of indium tin oxide thin films for organic light-emitting diode application

Ultrafast laser ablation of ITO thin film coated on the glass has been investigated as a function of laser fluence as well as the number of laser pulses. The ablation threshold of ITO thin film was found to be 0.07 J/cm² that is much lower than that of glass substrate (about 1.2–1.6 J/cm²), which leads to a selective ablation of ITO film without damage on glass substrate. The changes in the electrical resistance and morphology of ablated trench of ITO electrode were found to be strongly dependent on the processing conditions. We present the performance of organic light-emitting diodes (OLED) fabricated with ITO electrode patterned by ultrafast laser ablation.     

Modulating the Electrochromic Performances of Transmissive and Reflective Devices Using N,N-Dimethyl Formamide Modified Poly(3,4-Ethylenedioxythiophene)/Poly(Styrene Sulfonate) Blend as Active Layers

As one of the important factors which affect the properties and applications of conducting polymers, the electrical conductivity of a poly(3,4-ethylenedoxy-thiophene)/ poly(styrene sulfonate) (PEDOT: PSS) blend was adjusted by using various amount of an organic solvent (N,N-dimethyl formamide, DMF) as an additive. The conductivities of PEDOT: PSS thin films can be increased dramatically, from 1.0 S to 32.1 S cm^?1, with a 2/1 volume ratio of PEDOT: PSS/DMF loading after totally removing the organic solvent by annealing the film at 80° for 48 h in a vacuum oven. The optical contrasts of transmissive and reflective devices assembled using DMF-modified PEDOT: PSS as active layers exhibited a close relationship with the conductivity of PEDOT: PSS. Interestingly, high conductivity of PEDOT: PSS enhanced the contrast of a transmissive device, while high conductivity of PEDOT: PSS decreased the contrasts of a reflective device. The underlying reason is related to the different electrochromic mechanisms of these two types of device configurations.     

Biocompatible film deposition by using Nd:YAG pulsed laser

A Nd:YAG laser operating at the fundamental wavelength (1064 nm) and at the second harmonic (532 nm), with 9 ns pulse duration, 100–900 mJ pulse energy, and 30 Hz repetition rate mode, was employed to ablate in vacuum (10^?6 mbar) biomaterial targets and to deposit thin films on substrate backings. Titanium target was ablated at the fundamental frequency and deposited on near-Si substrates. The ablation yield increases with the laser fluence and at 40 J/cm ² the ablation yield for titanium is 1.2×10¹⁶ atoms/pulse. Thin film of titanium was deposited on silicon substrates placed at different distance and angles with respect to the target and analysed with different surface techniques (optical microscopy, scanning electron spectrosopy (SEM), and surface profile).

Hydroxyapatite (HA) target was ablated to the second harmonic and thin films were deposited on Ti and Si substrates. The ablation yield at a laser fluence of 10 J/cm ² is about 5×10¹⁴ HA molecules/pulse. Thin film of HA, deposited on silicon substrates placed at different distance and angles with respect to the target, was analysed with different surface techniques (optical microscopy, SEM, and Raman spectroscopy).

Metallic films show high uniformity and absence of grains, whereas the bio-ceramic film shows a large grain size distribution. Both films found special application in the field of biomaterial coverage.     

Radiation effects and pulsed laser deposition of titanium by Nd:Yag laser

A study of Ti laser irradiation and thin film deposition produced by an Nd:Yag pulsed laser is presented. The laser pulse, 9?ns width, has a power density of the order of 10¹⁰?W/cm². The titanium etching rate is of the order of 1?µg/pulse, it increases with the laser fluence and shows a threshold value at about 30?J/cm² laser fluence. The angular distribution of ejected atoms (neutrals and ions) is peaked along the normal of the target surface. At high fluence, the fractional ionization of the plasma produced by the laser is of the order of 10%. Time-of-flight measurements demonstrate that the titanium ions, at high laser fluence, may reach kinetic energies of about 1?keV. Obtained results can be employed to produce energetic titanium ions, to produce coverage of thin films of titanium and to realize high adherent titanium-substrate interfaces. The obtained results can be employed to produce energetic titanium ions, to produce a coverage of thin titanium films on polymers, and to realize highly adherent titanium–substrate interfaces.     

Effects of green laser fluence on the characteristics of graphene nanosheets synthesized by laser ablation method in liquid nitrogen medium

We have studied the effects of laser fluence on the characteristics of graphene nanosheets produced by pulsed laser ablation technique. In this work, The second harmonic of a Q-switched Nd:YAG laser at 532 nm wavelength and 5 Hz repetition rate with different laser fluences in the range of 0.5–1.8 J/cm² was used to irradiate the graphite target in liquid nitrogen medium. The products of ablation were characterized using Fourier transform infrared spectroscopy, field emission scanning electron microscopy, X-ray diffraction pattern, UV–Vis absorption spectroscopy, Raman spectrum and transmission electron microscopy. The Raman spectroscopy indicates that the quality of the graphene nanosheets was decreased while their structure defects were increased as the laser fluence was increased from 0.5 to 1.4 J/cm². Our results suggest that the amount of defects and the number of layers in graphene nanosheets can be changed by adjusting the laser fluence. This study could be a useful guidance for producing of high quality of graphene nanosheets by laser ablation method.     

Fabrication and characterization of freestanding ultrathin diamond-like carbon targets for high-intensity laser applications

Here, we report the fabrication of diamond-like carbon (DLC) thin films using pulsed laser deposition (PLD). PLD is a well-established technique for deposition of high-quality DLC thin films. Carbon tape target was ablated using a KrF (248 nm, 25 ns, 20 Hz) excimer laser to deposit DLC films on soap-coated substrates. A laser fluence between 8.5 and 14 J/cm² and a target to substrate distance of 10 cm was used. These films were then released from substrates to obtain freestanding DLC thin foils. Foil thicknesses from 20 to 200 nm were deposited using this technique to obtain freestanding targets of up to 1-inch square area. Typically, 100-nm-thick freestanding DLC films were characterized using different techniques such as AFM, XPS, and nano-indentation. AFM was used to obtain the film surface roughness of 9 nm rms of the released film. XPS was utilized to obtain 74 % sp², 23 % sp³, and 3 % C–O bond components. Nano-indentation was used to characterize the film hardness of 10 GPa and Young’s modulus of 110 GPa. Damage threshold properties of the DLC foils were studied (1,064 nm, 6 ns) and found to be 7 × 10¹⁰ W/cm² peak intensity for our best ultrathin DLC foils.     

Patterning of PLZT and PSZT thin films by excimer laser

The patterning of lanthanum-doped lead zirconate titanate (PLZT) and strontium-doped lead zirconate titanate (PSZT) thin films has been examined using a 5-ns pulsed excimer laser. Both types of film were deposited by rf magnetron sputtering with in situ heating and a controlled cooling rate in order to obtain the perovskite-structured films. The depth of laser ablation in both PSZT and PLZT films showed a logarithmic dependence on fluence. The ablation rate of PLZT films was slightly higher than that of PSZT films over the range of fluence (10–150 J/cm²) and increased linearly with number of pulses. The threshold fluence required to initiate ablation was ∼ 1.25 J/cm² for PLZT and ∼ 1.87 J/cm² for PSZT films. Individual squares were patterned with areas ranging from 10×10 μm² up to 30×30 μm² using single and multiple pulses. The morphology of the etched surfaces comprised globules which had diameters of 200–250 nm in PLZT and 1400 nm in PSZT films. The diameter of the globules has been shown to increase with fluence until reaching an approximately constant size at ≤ 20 J/cm² in both types of film. The composition of the films following ablation has been compared using X-ray photoelectron spectroscopy and energy-dispersive X-ray spectroscopy. PACS 79.20.Ds; 82.80.Pv; 82.80.Ej     

Enhanced thermoelectric properties of PEDOT/PSS/Te composite films treated with H<Subscript>2</Subscript>SO<Subscript>4</Subscript>

Firstly, tellurium (Te) nanorods with a high Seebeck coefficient have been integrated into a conducting polymer PEDOT/PSS to form PEDOT/PSS/Te composite films. The Seebeck coefficient of the PEDOT/PSS/Te (90 wt.%) composite films is ~191 μV/K, which is about 13 times greater than that of pristine PEDOT/PSS. Then, H₂SO₄ treatment has been used to further tune the thermoelectric properties of the composite films by adjusting the doping level and increasing the carrier concentration. After the acid treatment, the electrical conductivity of the composite films has increased from 0.22 to 1613 S/cm due to the removal of insulating PSS and the structural rearrangement of PEDOT. An optimized power factor of 42.1 μW/mK² has been obtained at room temperature for a PEDOT/PSS/Te (80 wt.%) sample, which is about ten times larger than that of the untreated PEDOT/PSS/Te composite film.     

Femtosecond laser ablation characteristics of nickel-based superalloy C263

Femtosecond laser (180 fs, 775 nm, 1 kHz) ablation characteristics of the nickel-based superalloy C263 are investigated. The single pulse ablation threshold is measured to be 0.26±0.03 J/cm² and the incubation parameter ξ=0.72±0.03 by also measuring the dependence of ablation threshold on the number of laser pulses. The ablation rate exhibits two logarithmic dependencies on fluence corresponding to ablation determined by the optical penetration depth at fluences below ∼5 J/cm² (for single pulse) and by the electron thermal diffusion length above that fluence. The central surface morphology of ablated craters (dimples) with laser fluence and number of laser pulses shows the development of several kinds of periodic structures (ripples) with different periodicities as well as the formation of resolidified material and holes at the centre of the ablated crater at high fluences. The debris produced during ablation consists of crystalline C263 oxidized nanoparticles with diameters of ∼2–20 nm (for F=9.6 J/cm²). The mechanisms involved in femtosecond laser microprocessing of the superalloy C263 as well as in the synthesis of C263 nanoparticles are elucidated and discussed in terms of the properties of the material.     

SEM and Raman spectroscopy analyses of laser-induced periodic surface structures grown by ethanol-assisted femtosecond laser ablation of chromium

The effect of fluence and pulse duration on the growth of nanostructures on chromium (Cr) surfaces has been investigated upon irradiation of femtosecond (fs) laser pulses in a liquid confined environment of ethanol. In order to explore the effect of fluence, targets were exposed to 1000 pulses at various peak fluences ranging from 4.7 to 11.8?J?cm^–2 for pulse duration of ～25?fs. In order to explore the effect of pulse duration, targets were exposed to fs laser pulses of various pulse durations ranging from 25 to 100?fs, for a constant fluence of 11.8?J?cm^–2. Surface morphology and structural transformations have been analyzed by scanning electron microscopy and Raman spectroscopy, respectively. After laser irradiation, disordered sputtered surface with intense melting and cracking is obtained at the central ablated areas, which are augmented with increasing laser fluence due to enhanced thermal effects. At the peripheral ablated areas, where local fluence is approximately in the range of 1.4–4?mJ?cm^–2, very well-defined laser-induced periodic surface structures (LIPSS) with periodicity ranging from 270 to 370?nm along with dot-like structures are formed. As far as the pulse duration is concerned, a significant effect on the surface modification of Cr has been revealed. In the central ablated areas, for the shortest pulse duration (25?fs), only melting has been observed. However, LIPSS with dot-like structures and droplets have been grown for longer pulse durations. The periodicity of LIPSS increases and density of dot-like structures decreases with increasing pulse duration. The chemical and structural modifications of irradiated Cr have been revealed by Raman spectroscopy. It confirms the formation of new bands of chromium oxides and enol complexes or Cr-carbonyl compounds. The peak intensities of identified bands are dependent upon laser fluence and pulse duration.     

Dependence of ablation threshold and LIPSS formation on copper thin films by accumulative UV picosecond laser shots

The ablation threshold and Laser-induced periodic surface structure (LIPSS) formation on copper thin film were investigated using a picosecond laser (Nd:YAG laser: 266 nm, 42 ps, 10 Hz). We show that the ablation threshold varies with respect to the number of laser shots (N) on two different substrates. The single-shot ablation threshold was estimated to be close to 170 ± 20 mJ/cm². The incubation coefficient was estimated to be 0.68 ± 0.03 for copper thin films on silicon and glass substrates. In addition, morphology changes of the ablated regions, in the same spot area, were studied as a function of fluence and number of laser shots. An intermediate structure occurred with a mix of low spatial frequency LIPSS (LSFL), high spatial frequency LIPSS (HSFL) and regular spikes at a fluence F < 250 mJ/cm² and 1,000 < N ≤ 10.000 shots. LSFL was observed with a spatial period close to the irradiation wavelength and an orientation perpendicular to the laser polarization, and HSFL with a spatial period of ～120 nm and a parallel orientation. Lastly, the global relationship between the laser parameters (i.e. fluence and number of shots) and LIPSS formation was established in the form of a 2D map.     

F2-laser patterning of indium tin oxide (ITO) thin film on glass substrate

This paper reports the controlled micromachining of 100 nm thick indium tin oxide (ITO) thin films on glass substrates with a vacuum-ultraviolet 157 nm F₂ laser. Partial to complete film removal was observed over a wide fluence window from 0.49 J/cm² to an optimized single pulse fluence of 4.5 J/cm² for complete film removal. Optical microscopy, atomic force microscopy, and energy dispersive X-ray analysis show little substrate or collateral damage by the laser pulse which conserved the stoichiometry, optical transparency and electrical conductivity of ITO coating adjacent to the trenches. At higher fluence, a parallel micron sized channel can be etched in the glass substrate. The high photon energy and top-hat beam homogenized optical system of the F₂ laser opens new means for direct structuring of electrodes and microchannels in biological microfluidic systems or in optoelectronics. PACS 79.20.Ds; 42.62.Cf; 42.55.Lc     

Surface texturing of the carbon steel AISI 1045 using femtosecond laser in single pulse and scanning regime

Surface texturing of the metals, including steels, gained a new dimension with the appearance of femtosecond lasers. These laser systems enable highly precise modifications, which are very important for numerous applications of metals. The effects of a Ti:sapphire femtosecond laser with the pulse duration of 160 fs, operating at 775 nm wavelength and in two operational regimes - single pulse (SP) and scanning regime, on a high quality AISI 1045 carbon steel were studied. The estimated surface damage threshold was 0.22 J/cm² (SP). Surface modification was studied for the laser fluences of 0.66, 1.48 and 2.37 J/cm². The fluence of 0.66 J/cm², in both working regimes, induced texturing of the material, i.e. formation of periodic surface structures (PSS). Their periodicity was in accordance with the used laser wavelength. Finally, changes in the surface oxygen content caused by ultrashort laser pulses were recorded.     

Pulsed laser deposition of PbTe films on glass substrates

PbTe thin films were prepared by pulsed laser deposition from a Nd:YAG laser (532 nm). The films were deposited on glass substrates. The influence of deposition temperature (80-160 °C), fluence (5-13 J/cm²) and nominal composition of the target on the chemical composition of the films was studied. It was found that the tellurium content of the film is strongly dependent on both the laser fluence and the deposition temperature. Highly textured stoichiometric films can be obtained with suitable conditions.     

Electron dynamics and prompt ablation of aluminum surface excited by intense femtosecond laser pulse

Thin aluminum film homogeneously heated by intense IR femtosecond laser pulses exhibits on the excitation timescale consequent fluence-dependent rise and drop of the IR-pump self-reflectivity, followed by its final saturation at higher fluences F > 0.3 J/cm². This prompt optical dynamics correlates with the initial monotonic increase in the accompanying laser-induced electron emission, which is succeeded by its non-linear (three-photon) increase for F > 0.3 J/cm². The underlying electronic dynamics is related to the initial saturation of IR resonant interband transitions in this material, followed by its strong instantaneous electronic heating via intraband transitions during the pump pulse resulting in thermionic emission. Above the threshold fluence of 0.3 J/cm², the surface electronic heating is balanced during the pump pulse by simultaneous cooling via intense plasma removal (prompt ablation). The relationship between the deposited volume energy density in the film and its prompt electronic temperature derived from the self-reflection measurements using a Drude model, demonstrates a kind of electron “liquid–vapor” phase transition, driven by strong cubic optical non-linearity of the photo-excited aluminum.     

Excimer laser crystallization of amorphous silicon on metallic substrate

An attempt has been made to achieve the crystallization of silicon thin film on metallic foils by long pulse duration excimer laser processing. Amorphous silicon thin films (100 nm) were deposited by radiofrequency magnetron sputtering on a commercial metallic alloy (N42-FeNi made of 41 % of Ni) coated by a tantalum nitride (TaN) layer. The TaN coating acts as a barrier layer, preventing the diffusion of metallic impurities in the silicon thin film during the laser annealing. An energy density threshold of 0.3 J?cm^?2, necessary for surface melting and crystallization of the amorphous silicon, was predicted by a numerical simulation of laser-induced phase transitions and witnessed by Raman analysis. Beyond this fluence, the melt depth increases with the intensification of energy density. A complete crystallization of the layer is achieved for an energy density of 0.9 J?cm^?2. Scanning electron microscopy unveils the nanostructuring of the silicon after laser irradiation, while cross-sectional transmission electron microscopy reveals the crystallites’ columnar growth.     

Micromachining of a thin film by laser ablation using femtosecond laser with masks

A gold thin film was machined by laser ablation using a femtosecond laser with mask patterns in the shape of lines and numbers. The patterns were successfully transferred with proper focusing and laser fluence. The optimal femtosecond laser fluence to keep the line width was about 5.2 mJ/cm² on the mask, and 99 mJ/cm² on the film. The processing resolution was 13 μm, and the narrowest line width was about 4 μm.     

Enhancement of temporal contrast of high-power femtosecond laser pulses using two saturable absorbers in the picosecond regime

We characterized the transmission properties of a color-glass-filter (RG850) saturable absorber (SA) in a wide range of pulse durations (from 25 fs to 5 ps). The transmission properties were strongly related to the energy fluence, pulse duration, and chirp parameter. On the basis of these properties, the input pulse duration, chirp parameter, and energy fluence were optimized to maintain the width of the transmitted laser spectrum as much as possible with minimal energy loss. We demonstrated that, by transmitting a positively chirped 2.8-ps laser pulse to two identical SAs at an energy fluence of 15 mJ/cm², the temporal contrast ratio of the main pulse to the amplified spontaneous emission was enhanced by 4 orders of magnitude without any significant energy loss or strong spectral narrowing in a 10-Hz, 100-TW femtosecond laser system.     

Using IR laser radiation for backside etching of fused silica

Laser-induced backside etching of fused silica with gallium as highly absorbing liquid is demonstrated using pulsed infrared laser radiation. The influences of the laser fluence, the pulse number, and the pulse length on the etch rate and the etched surface topography were studied and the results are compared with these of excimer laser etching. The high reflectivity of the fused silica-gallium interface at IR wavelengths results in the measured high threshold fluences for etching of about 3 J/cm² and 7 J/cm² for 18 ns and 73 ns pulses, respectively. For both pulse lengths the etch rate rises almost linearly with laser fluence and reaches a value of 350 and 300 nm/pulse at a laser fluence of about 12 and 28 J/cm², respectively. The etching process is almost free from incubation processes because etching with the first laser pulse and a constant etch rate were observed. The etched surfaces are well-defined with clear edges and a Gaussian-curved, smooth bottom. A roughness of about 1.5 nm rms was measured by AFM at an etch depth of 0.95 μm. The normalization of the etch rates with respect to the reflectivity and the pulse length results in similar etch rates and threshold fluence for the different pulse widths and wavelengths. It is concluded that etching is a thermal process including the laser heating, the materials melting, and the materials etching by mechanical forces. The backside etching of fused silica with IR-Nd:YAG laser can be a promising approach for the industrial usage of the backside etching of a wide range of materials. PACS 81.65.C; 81.05.J; 79.20.D; 61.80.B; 42.55.L     

The effects of pulsed laser injection seeding and triggering on the temporal behavior and magnitude of laser-induced incandescence from soot

The effect of sub-nanosecond fluence fluctuations and triggering on time-resolved laser-induced incandescence (LII) from soot has been studied using an injection-seeded pulsed Nd:YAG laser that produces a smooth laser temporal profile. Without injection seeding, this multi-mode laser generates pulses with large intensity fluctuations with sub-nanosecond rise times. The experimental results described here demonstrate that at fluences below 0.6 J/cm² LII signals are insensitive to fluence fluctuations on nanosecond time scales. At fluences above 0.6 J/cm² fluctuations in the laser profile cause the rising edge of the LII profile to move around in time relative to the center of the laser pulse causing a broader average profile that shifts to earlier times. Such fluctuations also lead to a decrease in the average LII temporal profile by up to 12% at a fluence of 3.5 J/cm². A timing jitter on the trigger of the data acquisition, such as that produced by triggering on the laser Q-switch synchronization pulse, has a negligible effect on the shape and temporal maximum of the LII signal. Additional jitter, however, considerably reduces the peak of the LII temporal profiles at fluences as low as 0.15 J/cm². Neither fast fluence fluctuations nor trigger jitter have a significant effect on gated LII signals, such as those used to infer soot volume fraction.