Si∶H∶O薄膜的室温强紫外光致发光

用等离子体增强辉光放电法制成a-Si∶H∶O薄膜,未经任何后处理过程,观察到峰值分别位于340—370,400—430以及740nm的三个光致发光(PL)带.这种紫外光发射既强又稳定,其强度与薄膜中的氧含量紧密相关,而后者可通过薄膜淀积过程中施加在其衬底上的直流偏压进行控制.前两个PL峰来源于a-Si∶H∶O中与氧有关的色心,而后一个PL峰则来源于嵌入a-Si∶H∶O中纳米硅晶粒的量子尺寸效应和晶粒表面的色心两方面的作用.     

单晶Si Nd∶YAG激光连续退火的数值计算

应用固相外延模型来模拟单晶Si的连续Nd∶YAG激光退火过程,在低功率密度连续激光退火下,用准静态模型模拟辐照区向非辐照区的径向传导散热.在数值计算中,应用部分线性法处理非线性非齐次热传导方程,得到相应的隐格式差分方程,再用追赶法求解隐格式差分方程,得出绝热边界条件下的温度的时间和空间分布,从而得出激光退火的再结晶厚度.当激光波长λ=1.06μm、功率密度i0=700W/cm2,预热温度T0=523K时,经过0.7秒,表面温度度升到1 290K左右,再结晶厚度约为0.5μm.     

气流混合对生长GaN∶Si膜性能影响的研究

用金属有机化学气相沉积技术在三种不同型号的反应管中生长了GaN∶Si膜。通过对样品的光电及结晶性能的分析 ,研究了气流混合时间不同对GaN∶Si膜性质的影响。结果表明 :合理的Ⅲ、Ⅴ族气流混合对提高GaN∶Si膜的光电及结晶性能很重要。Ⅲ、Ⅴ族气流混合太早 ,气流混合时间长 ,GaN∶Si膜的黄带与带边发射强度之比较大 ,X射线双晶衍射半高宽较宽 ;Ⅲ、Ⅴ族气流混合太晚 ,尽管可减少预反应 ,但气流混合不均匀 ,致使GaN∶Si膜的发光性能及结晶性能变差。使用Ⅲ、Ⅴ族气流混合适中的反应管B生长 ,获得了光电及结晶性能良好的GaN∶Si单晶膜。     

Lu2Si2O7∶Ce晶体的闪烁性能

用提拉法生长了Lu2Si2O7∶Ce晶体,对该晶体的闪烁性能进行了研究。透射光谱表明,Lu2Si2O7∶Ce晶体的吸收边比Lu2SiO5∶Ce晶体向短波方向移动了25nm,使透光范围进一步拓宽。X射线发射光谱和UV激发发射光谱均具有典型的双峰特征,主峰在378nm。UV激发发射谱具有温度效应,即375K以上时,发光效率迅速降低;425K以上时,发光主峰位明显红移。衰减曲线符合单指数式衰减规律,常温下经UV激发后的衰减时间约为34ns。从曲线形态看,375K以下的衰减谱与室温下的几乎完全相同,拟合的结果在32.8～34ns之间;衰减时间的温度效应从375K开始显现,即随温度的升高,衰减时间有加速变短的趋势,到500K时缩短为6.72ns。热释光谱在488,553K处有两个热释光峰,但室温附近几乎观察不到热释光峰。     

Calculation of certain statistical and kinetic characteristics of aαSi∶H

The present work is devoted to a calculation of certain characteristics of the intrinsic random field ina-SiH, related to many statistical and kinetic properties of this disordered heteropolar (for not too low concentrations of hydrogen) substance. Estimates have been made of the values of effective charges of the bonds between the elements, and values of energies have been obtained which characterize the extent of the tail of the density of states in the forbidden band and of the tail of the coefficient of interband absorption of light under the condition < Eg, etc. Results of calculations are in good agreement with experimental data.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 22–26, September, 1985.     

Thermoluminescence of (ZnS∶CdS∶Ag∶Ni∶Co) phosphors

The doping of (ZnSCdSAgNi) phosphors with cobalt impurity results in new phosphors with thermoluminescence curves showing five distinct peaks. Four of these peaks are associated with chlorine, cadmium, cobalt and nickel impurities and have energy depths of 0·26 eV, 0·52 eV, 0·53 eV and 0·78 eV respectively. The fifth peak, appearing at high cobalt concentrations, has an energy depth of 1·09 eV and is attributed to the formation of (Co⁺⁺ - Ag^–) associates. The emitted thermoluminescence consists of two bands: one in the yellow and the other in the red spectral region. The yellow band subsumes the chlorine, cadmium and cobalt peaks and is due to recombination processes occurring through silver centres. The red band, on the other hand, includes the nickel and the (Co⁺⁺-Ag^–) peaks. The appearance of the nickel peak in the red band is explained by recombination processes at energy levels created by the nickel impurity centres.     

Er∶YCOB和Er∶Yb∶YCOB晶体的光谱分析

分别测量了 Er∶ YCOB晶体和 Er∶Yb∶YCOB晶体的室温吸收光谱。讨论了 Yb3 +离子对 Er3 +离子的敏化作用     

溶胶-凝胶法合成蓝色荧光粉SrAl2Si2O8∶Eu2+

采用溶胶-凝胶(Sol-gel)法以相应的硝酸盐和正硅酸乙酯(TEOS)为反应物在85℃水浴制得胶体,并将干燥后的胶体前驱物在较低温度(921℃)下还原制得蓝色发光材料SrAl2Si2O8∶Eu2+.分别以热重(TG)-差示扫描量热(DSC)、X射线粉末衍射(XRD)、光致发光(PL)对合成产物进行了表征.并深入研究了溶胶-凝胶法制备过程中的影响因素,如pH值、乙醇含量、柠檬酸含量等,确定了合成SrAl2Si2O8∶Eu2+的最佳条件.XRD分析表明,当金属离子与柠檬酸的量的比为1∶1,无水乙醇的量至少保证TEOS完全溶解于其中,溶液pH值为1.0～2.0时,可得到纯的SrAl2Si2O8六方物相.发光分析表明,产物在监测463 nm波长下的激发峰为327 nm,在394 nm激发下的发射光谱峰为468 nm.     

A proposed mechanism for void formation in electron-irradiated (ZnS∶CdS∶Ag∶Ni∶Co) phosphors

Transmission electron microscopy and diffraction investigations have been conducted on (ZnSCdSAgNiCo) phosphors. The phosphors decomposed under electron bombardment according to a suggested mechanism in which the creation of metallic ion vacancies led to the formation of cavities and voids. Sulphur atoms, resulting from the transformation of sulphur ions by secondary electron emission, acquired energy from the electron beam and penetrated the walls of the voids under the effect of relaxation. The voids migrated to the crystal faces under the combined effect of temperature and electric potential gradients set up by the electron beam. The final decomposition product consisted of colloidal zinc and cadmium which were accompanied by the release of sulphur. The decomposition rate increased with increase in cobalt content of the phosphor due to a corresponding increase in the concentration of defects. The catastrophic decomposition occurring at high beam intensities has been attributed to a highly localized temperature rise in certain regions of the irradiated crystals.     

Zn∶Mn∶Fe∶LiNbO3晶体位相共轭性能和全息关联存储

在同成分LiNbO3中,掺入ZnO的摩尔分数分别为1%、3%、5%、7%和9%,掺入（质量分数）0.03% MnCO3和0.08%Fe2O3,采用提拉法生长了优质Zn∶Mn∶Fe∶LiNbO3晶体.测试Zn∶Mn∶Fe∶LiNbO3晶体的OH-红外吸收光谱,抗光损伤能力和位相共轭性能.Zn离子浓度在7%和9%时,OH-吸收峰移到3 528 cm－1,讨论OH-吸收峰移动机理.随着Zn离子浓度增加,抗光损伤能力增加.Zn离子浓度增加到7%,达到阈值.Zn∶Mn∶Fe∶LiNbO3晶体抗光损伤能力比LiNbO3晶体高二个数量级,研究高掺锌Mn∶Fe∶LiNbO3晶体抗光损伤增强机理.随着Zn离子浓度增加,Zn∶Mn∶Fe∶LiNbO3晶体位相共轭反射率降低,位相共轭响应速度增加.Zn∶Mn∶Fe∶LiNbO3晶体位相共轭镜消除了光波的位相畸变.以Zn∶Mn∶Fe∶LiNbO3晶体作存储介质进行全息关联存储实验.讨论全息关联存储的工作原理.以原图象的25%和50%进行寻址,在输出平面上接收到较完整的存储图象.     

Zn∶Mn∶Fe∶LiNbO3晶体位相共轭性能和全息关联存储

在同成分LiNbO3中,掺入ZnO的摩尔分数分别为1％、3％、5％、7％和9％,掺入(质量分数)0.03％ MnCO3和0.08％Fe2O3,采用提拉法生长了优质Zn∶Mn∶Fe∶LiNbO3晶体,测试Zn∶Mn∶Fe∶LiNbO3晶体的OH红外吸收光谱,抗光损伤能力和位相共轭性能.Zn离子浓度在7％和9％时,OH吸收...     

Lu2Si2O7∶Ce纳米晶的溶胶-凝胶法合成和闪烁性能

采用溶胶-凝胶法制备了Lu2Si2O7∶Ce纳米晶,利用X射线衍射(XRD)、扫描电镜(SEM)、荧光光谱仪、X射线激发发射谱仪对制备的Lu2Si2O7∶Ce纳米晶的晶相结构、微观形貌和光学性能进行了表征。结果表明,溶胶-凝胶法制备的Lu2Si2O7∶Ce前驱体在煅烧温度为1000℃时开始晶化,晶粒尺寸随着煅烧温度的升高而变大,1200℃煅烧2 h后的晶体颗粒均匀,分散性最优,平均晶粒尺寸约为28.9 nm,呈近球形;Lu2Si2O7∶Ce纳米晶的紫外吸收谱存在峰位分别为304 nm和350 nm两个吸收峰,源自于Ce^3+离子的4f→5d跃迁;光致发射谱和X射线激发发射谱都表现为典型的非对称双峰结构,归属于Ce^3+离子的5d^1→2F5/2和5d^1→2F7/2跃迁,Ce^3+离子的最佳掺杂浓度约为1%;荧光衰减时间约为37.2 ns,可满足高时间分辨X射线探测需要。     

Eu3+∶Sm3+∶Cr3+∶YAG红色单晶荧光体

报道外延生长的多激活中心掺杂的红色单晶荧光体Eu3 ∶Sm3 ∶Cr3 ∶YAG ,其直径达到54mm ,荧光色坐标为x=0 .6 137,y =0 .3738,相当于波长λ=599nm的红色荧光 ,具有较高的色饱和度。这种单晶材料具有很好的抗电子束灼伤能力 ,在入射能量达到 10 5W/m2 时无发光猝灭现象 ,是一种较理想的红色单晶荧光材料。     

Silver schottky contacts on Si(111)∶ H-(1×1) surfaces prepared by wet-chemical etching

Schottky contacts were prepared by evaporation of silver on H-terminated Si(111) surfaces at room temperature. The Si(111)H-(1×1) surfaces were obtained by wet-chemical etching in buffered hydrofluoric acid. The zero-bias barrier heights and the ideality factors, which were determined fromI/V characteristics measured with these contacts, were found to be linearly correlated. This plot gives a zero-bias barrier height of 0.74 eV for an ideality factor of 1.01 which is obtained for image-force lowering of the barrier only. The barrier heights observed here equal the one found with Ag/Si(111)-(1×1) contacts. They were prepared by Ag evaporation onto clean Si(111)-(7×7) surfaces at room temperature and subsequent heat treatments. The present result is explained by the desorption of the hydrogen adatoms during the deposition of Ag and the existence of a (1×1)-structure at the Ag/Si(111) interface.     

镓置换铝对SrAl2Si2O8∶Eu2+晶体结构和发光特性的影响

采用高温固相法在弱还原气氛下制备了Sr0.955Al2－xGaxSi2O8∶Eu2+ (x=0～1.0)系列荧光粉,研究了Ga3+置换铝Al3+对晶体结构和光谱特性的影响.Ga3+进入SrAl2Si2O8晶格与Al3+发生类质同相替代使晶胞参量a、b、c、β和晶胞体积V都随Ga3+置换量呈线性增大,表明形成了连续固溶体.镓置换铝对晶胞参量c的影响最明显,b其次,a最小.Eu2+的宽带激发光谱位于230～400 nm,表观峰值位于350 nm,可由267 nm、305 nm、350 nm和375 nm四个峰拟合而成.随着镓置换量增加,较短波长的三个激发峰发生红移并且267 nm和350 nm峰强度减弱,305 nm峰强度明显增强,375 nm峰位和强度基本不变,表观激发峰半高宽由109 nm减小至98 nm,基本不随镓置换量变化.发射光谱位于380～600 nm为不对称宽带,可由406 nm和441 nm两峰拟合而成并且随Ga3+置换量增加线性红移,拟合发射光谱峰面积之比线性递增,Ga3+进入晶格对较长波长发射中心影响较大.Ga3+置换量为1.0 mol时,表观发射峰位从407 nm线性红移至422 nm,表观峰值随Ga3+置换量线性增大,半高宽由58 nm增加至79 nm.镓置换铝造成Eu-O距离变小,发光中心Eu2+所处晶体场增强,5d轨道能级分裂变大,最低发射能级下移.     

ПОГЛОЩЕНИЕ И РАССЕЯНИЕ МОНОКРИСТАЛЛОВ NaCl ∶ Ni

NaCl Cd [10]. , NaCl Ni , .

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Absorption and dispersion on NaCl Ni crystals

The results of measuring the absorption and dispersion of light on NaCl Cd crystals were compared with the X-ray diffraction measurements by Toman [10]. The comparison showed that under certain conditions micro-regions of segregated impurities are produced in NaCl Ni crystals, apparent in an increased dispersion of light in the ultra-violet region.

     

Zn∶Fe∶LiNbO_3晶体全息存储性能研究

以提拉法生长Zn(1mol% )∶Fe∶LiNbO3,Zn(4mol % )∶Fe∶LiNbO3,Zn(7mol% )∶Fe∶LiNbO3晶体 Zn∶Fe∶LiNbO3晶体随着Zn2 + 浓度的增加 ,抗光致散射能力增加 ,Zn(7mol% )∶Fe∶LiNbO3晶体抗光致散射能力比Fe∶LiNbO3晶体提高两个数量级以上 测试了Zn∶Fe∶LiNbO3晶体衍射效率、响应时间 以Zn(7mol % )∶Fe∶LiNbO3晶体作为存储元件 ,Zn(4mol% )∶Fe∶LiNbO3晶体作为位相共轭镜 ,进行全息关联存储试验 试验结果显示出成像质量好、图像清晰完整、噪音小等优点 研究了Zn∶Fe∶LiNbO3晶体全息存储性能增强的机理 Zn(4mol% )∶Fe∶LiNbO3晶体具有全息存储性能最佳的综合指标