An influence of deposition temperature on structural,optical and electrical properties of sprayed ZnO thin films of identical thickness

Nanocrystalline ZnO thin films were deposited at different temperatures (T_s = 325 °C–500 °C) by intermittent spray pyrolysis technique. The thickness (300 ± 10 nm) independent effect of T_s on physical properties was explored. X-Ray diffraction analysis revealed the growth of wurtzite type polycrystalline ZnO films with dominant c-axis orientation along [002] direction. The crystallite size increased (31 nm–60 nm) and optical band-gap energy decreased (3.272 eV–3.242 eV) due to rise in T_s. Scanning electron microscopic analysis of films deposited at 450 °C confirmed uniform growth of vertically aligned ZnO nanorods. The films deposited at higher T_s demonstrated increased hydrophobic behavior. These films exhibited high transmittance (>91%), low dark resistivity (～10^?2 Ω-cm), superior figure of merit (～10^?3 Ω^?1) and low sheet resistance (～10² Ω/□). The charge carrier concentration (η -/cm³) and mobility (μ – cm²V^?1s^?1) are primarily governed by crystallinity, grain boundary passivation and oxygen desorption effects.     

Effect of neutral pressure on the He plasma flow measurement in a linear device

Axial and azimuthal flow velocities have been measured in a linear plasma device called NAGDIS-II (NAGoya DIvertor Simulator-II), along with plasma density and electron temperature, using a vector Mach probe composed of two Mach probes, one of which is for the axial flow, and the other is for the azimuthal flow. To study the effect of neutral pressure on the deduction of the Mach numbers, the ratio of upstream to downstream currents are measured by changing the neutral pressure for the deduction of flow velocities. Helium plasma was generated with pressure of 2–35 mTorr. Since the ion gyro-radius at the magnetic flux of 300 G is larger than the probe size, an unmagnetized collisionless Mach probe theory was used for the deduction of Mach numbers and their variations. In order to check the range of collisionality, plasma density (n_e = 10¹⁰–10¹¹ cm^?3) and electron temperature (T_e = 2–9 eV) are measured by a single electric probe using a conventional collisionless probe theory. Variations of Mach number, electron temperature and plasma density with collisionless models are to be compared with those using collisional models for different pressures where ionization and ion-neutral collision are included. Mach numbers by the collisionless model are found to be overestimated by 120% for the maximum difference even in weakly collisional plasmas. A clear flow reversal exists in the axial direction with higher pressure plasma, even in the linear machine. Azimuthal flows are also measured simultaneously along with axial flows, yet they seem to be very small in the present cold ion plasma (T_i/T_e << 1).     

Spectroscopic characterizations of individual single-crystalline GaN nanowires in visible/ultra-violet regime

Spectroscopic investigations of individual single-crystalline GaN nanowires with a lateral dimensions of ～30–90 nm were performed using the spatially resolved technique of electron energy-loss spectroscopy in conjunction with scanning transmission electron microscope showing a 2-Å electron probe. Positioning the electron probe upon transmission impact and at aloof setup with respect to the nanomaterials, we explored two types of surface modes intrinsic to GaN, surface exciton polaritons at ～8.3 eV (～150 nm) and surface guided modes at 3.88 eV (～320 nm), which are in visible/ultra-violet spectral regime above GaN bandgap of ～3.3 eV (～375 nm) and difficult to access by conventional optical spectroscopies. The explorations of these electromagnetic resonances might expand the current technical interests in GaN nanomaterials from the visible/UV range below ～3.5 eV to the spectral regime further beyond.     

MgB2 coated conductors directly grown on flexible metallic Hastelloy tapes by hybrid physical–chemical vapor deposition

MgB₂ coated conductors (CCs), which can avoid the low packing density problem of powder-in-tube (PIT) processed wires, can be a realistic solution for practical engineering applications. Here we report on the superior superconducting properties of MgB₂ CCs grown directly on the flexible metallic Hastelloy tapes without any buffer layer at various deposition temperatures from 520 to 600 °C by using hybrid physical–chemical vapor deposition (HPCVD) technique. The superconducting transition temperatures (T_c) are in the range of 38.5–39.4 K, comparable to bulk samples and high quality thin films. Clear (101) and (002) reflection peaks of MgB₂ are observed in the X-ray diffraction patterns without any indication of chemical reaction between MgB₂ and Hastelloy tapes. From scanning electron microscopy, it was found that connection between MgB₂ grains and voids strongly depend on the growth temperature. A systematic increase in the flux pinning force density and thereby the critical current density with decreasing growth temperature was observed for the MgB₂ CCs. The critical current density (J_c) of J_c(5 K, 0 T) ～10⁷ A/cm² and J_c(5 K, 2.5 T) ～10⁵ A/cm² has been obtained for the sample fabricated at a low growth temperature of 520 °C. The enhanced J_c (H) behavior can be understood on the basis of the variation in the microstructure of MgB₂ CCs with growth temperature.     

Modeling midwave infrared muzzle flash spectra from unsuppressed and flash-suppressed large caliber munitions

Time-resolved infrared spectra of firings from a 152 mm howitzer were acquired over an 1800–6000 cm^?1 spectral range using a Fourier-transform spectrometer. The instrument collected primarily at 32 cm^?1 spectral and 100 Hz temporal resolutions. Munitions included unsuppressed and chemically flash suppressed propellants. Secondary combustion occurred with unsuppressed propellants resulting in flash emissions lasting ～100 ms and dominated by H₂O and CO₂ spectral structure. Non-combusting plume emissions were one-tenth as intense and approached background levels within 20–40 ms. A low-dimensional phenomenological model was used to reduce the data to temperatures, soot absorbances, and column densities of H₂O, CO₂, CH₄, and CO. The combusting plumes exhibit peak temperatures of ～1400 K, areas of greater than 32 m², low soot emissivity of ～0.04, with nearly all the CO converted to CO₂. The non-combusting plumes exhibit lower temperatures of ～1000 K, areas of ～5 m², soot emissivity of greater than 0.38 and CO as the primary product. Maximum fit residual relative to peak intensity are 14% and 8.9% for combusting and non-combusting plumes, respectively. The model was generalized to account for turbulence-induced variations in the muzzle plumes. Distributions of temperature and concentration in 1–2 spatial regions demonstrate a reduction in maximum residuals by 40%. A two-region model of combusting plumes provides a plausible interpretation as a ～1550 K, optically thick plume core and ～2550 K, thin, surface-layer flame-front. Temperature rate of change was used to characterize timescales and energy release for plume emissions. Heat of combustion was estimated to be ～5 MJ/kg.     

Ionization equilibrium and radiative energy loss rates for C,N, and O ions in low-density plasmas

The results of calculations of the ionization equilibrium and radiative energy loss rates for C, N and O ions in low-density plasmas are presented for electron temperatures in the range 10⁴–10⁷ °K (～1–10³ eV). The ionization structure is determined using the steady-state corona model, in which electron impact ionization from the ground states is balanced by direct radiative and dielectronic recombination. Using an improved theory, detailed calculations are carried out for the dielectronic recombination rates in which account is taken of all radiative and autoionization processes involving a single-electron electricdipole transition of the recombining ion. The radiative energy loss processes considered are electron-impact excitation of resonance line emission, direct radiative recombination, dielectronic recombination, and electron-ion bremsstrahlung. For all three elements, resonance line emission resulting from 2s?2p transitions produces a broad maximum in the energy loss rate near 10⁵°K(～ 10 eV).     

Extreme ultraviolet and soft x-ray laser emission from Ni-like Nd ions

We use the energy levels, transition probabilities, and effective collision strengths for the states 1s² 2s² 2p⁶ 3s² 3p⁶ 3d¹⁰ and 1s² 2s² 2p⁶ 3s² 3p⁶ 3d⁹ 4 l (l = s, p, d, and f) of a nickel-like Nd ion to determine reduced population for 55 fine-structure levels over a wide range of electron density values (from 10²⁰ to 4 · 10²² cm ⁻³) at various electron plasma temperatures in the range of 1–2 keV. We find the gain coefficients for those transitions with the positive population inversion factor and show their dependences on the electron density.     

Microwave microplasma sources based on microstrip-like transmission lines

In this paper, we study two microwave sources based on a planar transmission line configuration, corresponding to linear resonators. In both sources, micro-plasmas are produced within the 50–200 m\mu m gap created between two metal electrodes placed at the open end of a microstrip-like transmission line. The study of the sources follows a complementary approach that uses simulation and experiment. Simulations analyze the electromagnetic behavior of the sources, using the commercial tool CST Microwave Studio^?, and characterize the plasmas produced, using a fluid-type code to describe the dynamics of charged particles. Experimentally, the return loss of the sources (hence their quality factors) is measured without and with plasma. Plasma diagnostics (in air and in argon), based on optical emission spectroscopy measurements, enable to obtain the typical plasma temperatures and the electron density (using Stark broadening measurements of the H_b_{\beta} line-emission profile). Results reveal that the sources have similar quality factors (~15–20), yielding high-density (~10¹⁴ cm^-3)^{-3}), low-power (~10–50 W), non-equilibrium micro-plasmas (with rotational temperatures of ~950–1400 K in air and ~550–630 K in argon, vibrational temperatures of ~5200–5800 K in air and excitation temperatures of ~5800 K in argon), over volumes of ~10^-4–10^-3 cm³.     

Forward plasma emission through laser–foil interaction with nanosecond lasers

Fundamental investigations of plasma diagnostics of a forward laser plasma acceleration employing laser–foil interactions were conducted for an Al-foil target irradiated with an Nd:YAG laser of 1 J/pulse with pulse width of 10 ns. Temporal evolutions of electron temperatures and densities were evaluated with electrostatic probes and spectroscopic diagnostics. From the results, it was shown that an average speed of ions in a forward direction was about 40 km/s. Also, it was shown that the plasma temperature and density were about 2.5–8 eV and 10¹⁰ cm⁻³, respectively.     

Investigation of warm dense matter using time-resolved X-ray absorption spectroscopy with third- and fourth- generation light sources

The advent of high-power lasers has provided insights into laboratory high energy density (>10¹¹ J/m³) physics. In particular, the properties of warm dense matter (WDM) with temperatures of 10⁴–10⁶ K and near-solid densities is a research area that has garnered significant interest recently. However, owing to the high temperatures and pressures associated with WDM, the measurement of fundamental properties is difficult, and insufficient data has been a significant setback in WDM research. Herein, we review recent developments in time-resolved X-ray absorption spectroscopy with synchrotron and X-ray free electron lasers for WDM research. Various physical properties, such as atomic bonding, electronic structures, electron–phonon coupling, and thermal conductivity of various elements in WDM conditions are investigated via this noble X-ray technique at various time scales from 100 ps to 100 fs.     

Path integral approach for Stark broadening of Lyman lines in hydrogen plasma

New results for Lyman lines from hydrogen plasmas are presented using the path integral approach. The influence of plasma components (electrons and ions) on the radiator is analysed separately. The ionic contribution is treated within the path integral approach, while the electronic contribution is estimated by the standard collision operator. The Stark effect, including the ion quadrupole contribution, is considered. The time‐dependent ionic microfield is treated within the path integral approximation using the model microfield method (MMM). The comparison with the quantum statistical approach is performed using a wide range of temperatures (T = 10⁴–10⁷ K) and electron densities (N_e = 10²³–10²⁶ m^?3). Good agreement is mainly obtained for low density and high temperature.     

高频电场对双探针法诊断低压等离子体的影响

本文中导出了不论在鞘层上是否存在高频电压降时统一的双探针伏-安特性曲线表达式及确定电子温度的公式。从理论及实验上研究了鞘层上的交流电压对双探针诊断的影响,并求得等离子体在10^-2—10^-3Torr范围内的电子温度,实验的分析结果和理论完全一致。证明当电子能量分布为麦克斯韦分布时,高频干扰对确定电子温度基本上无影响。通过对实验结果的分析,以及用三探针法的相互校核,证明实验结果是可靠的。 关键词：     

On plasma parameters of a self-organized plasma jet at atmospheric pressure

Electron temperature and electron concentration in the active zone of a miniaturized radio frequency (RF) non-thermal atmospheric pressure plasma jet in argon have been determined using two independent approaches: the spectroscopic measurement of the broadening of Balmer H_b_\beta and H_g_\gamma lines and a time-dependent, spatially two-dimensional fluid model of a single discharge filament. The plasma source has been configured as a capacitively coupled RF jet (27.12 MHz, 8 W generator output power) with two outer ring electrodes around a quartz capillary with diameter of 4.0 mm between which Ar flows at typical rates of 0.3 slm. The discharge has been operated in a self-organized mode, where equidistant, stationary filaments rotate regularly with a constant frequency at the inner wall of the outer capillary. For the purpose of calculating the spectral line broadening different models applicable at higher electron concentration have been evaluated. Resulting electron concentrations are between 2.2 and 3.3 × 1014 cm^-3. The calculation according to the line broadening model provides electron temperatures between 20 000 and 30 000 K which is in agreement with the results of the fluid model calculations. Here, a broad radial profile with a maximal value of about 22 000 K in the centre of the column and an electron concentration of about 7 × 10¹³ cm^-3 have been obtained. Moreover, the results of the model calculations reveal a structural change of the filament from the dielectric surface through the sheath to the column. The axially inhomogeneous region has an extension of about 0.5 mm. In the column a concentration of about 10¹³ cm^-3 has been found for the excited argon atoms, whose collisions with electrons represent the most important ionization channel there.     

Structure formation and mechanisms of DC conduction in thermally evaporated nanocrystallite structure ZnIn2Se4 thin films

ZnIn₂Se₄ is of polycrystalline structure in as synthesized condition. It transforms to nanocrystallite structure of ZnIn₂Se₄ film upon thermal evaporation. Annealing temperatures influenced crystallite size, dislocation density and internal strain. The hot probe test showed that ZnIn₂Se₄ thin films are n-type semiconductor. The dark electrical resistivity versus reciprocal temperature for planar structure of Au/ZnIn₂Se₄/Au showed existence of two operating conduction mechanisms depending on temperature. At temperatures >365 K, intrinsic conduction operates with activation energy of 0.837 eV. At temperatures <365 K, extrinsic conduction takes place with activation energy of 0.18 eV. The operating conduction mechanism in extrinsic region is variable range hopping. The parameters such as density of states at Fermi level, hopping distance and average hopping energy have been determined and it was found that they depend on film thickness. The dark current–voltage characteristics of Au/n-ZnIn₂Se₄/p-Si/Al diode at different temperatures ranging from 293–353 K have been investigated. Results showed rectification behavior. At forward bias potential <0.2 V, thermionic emission of electrons from ZnIn₂Se₄ film over a potential barrier of 0.28 V takes place. At forward bias potential >0.2 V, single trap space charge limited current is operating. The trap concentration and trap energy level have been determined as 3.12×10¹⁹ cm⁻³ and 0.24 eV, respectively.     

Biomolecular solid state NMR with magic-angle spinning at 25K

A magic-angle spinning (MAS) probe has been constructed which allows the sample to be cooled with helium, while the MAS bearing and drive gases are nitrogen. The sample can be cooled to 25 K using roughly 3 L/h of liquid helium, while the 4-mm diameter rotor spins at 6.7 kHz with good stability (±5 Hz) for many hours. Proton decoupling fields up to at least 130 kHz can be applied. This helium-cooled MAS probe enables a variety of one-dimensional and two-dimensional NMR experiments on biomolecular solids and other materials at low temperatures, with signal-to-noise proportional to 1/T. We show examples of low-temperature ¹³C NMR data for two biomolecular samples, namely the peptide Aβ_14–23 in the form of amyloid fibrils and the protein HP35 in frozen glycerol/water solution. Issues related to temperature calibration, spin–lattice relaxation at low temperatures, paramagnetic doping of frozen solutions, and ¹³C MAS NMR linewidths are discussed.     

Resistive switching behavior in a Ni–Ag<Subscript>2</Subscript>Se–Ni nanowire

Hysteretic resistive switching behavior in a silver selenide (Ag₂Se) nanowire, which had a diameter of about 200 nm and a length of about 10 μm, was studied using scanning probe microscopy. Electrical current measurements were carried out in a range from 0 to −10 V and in temperatures below and above the phase transition of Ag₂Se. ON/OFF switching times were measured with pulsed voltages. They displayed different characteristics at low and high temperatures. The results confirm that Ag₂Se nanowires have applications in nanoscale switching devices.     

Magneto-transport of InAs-quantum wells using InP0.69Sb0.31as a barrier material

InAs/InP_0.69Sb_0.31quantum-well structures grown by metal organic vapor-phase epitaxy are studied by temperature-dependent Hall measurements and by quantum Hall and Shubnikov de Haas effect measurements. At temperatures below 0.3 K a two-dimensional electron gas without a conductive by-pass was demonstrated. For a two-dimensional electron gas with a sheet electron concentration of 2.2 × 10¹²cm⁻²mobilities as high as 118 000 cm²(Vs)⁻¹were observed. In contrast to samples doped on both sides of the quantum well, a beating pattern in the longitudinal resistance was observed for samples which were doped on only one side. This effect is explained by spin–orbit coupling of the electrons in the quantum well which leads to a separation in two spin-splitted subbands. A spin-split energy in the range from 6.9 meV to 8.4 meV was extracted from the Shubnikov de Haas measurements.     

Effect of MeV electron irradiation on the free volume of polyimide

The free volume of the microvoids in the polyimide samples, irradiated with 6 MeV electrons, was measured by the positron annihilation technique. The free volume initially decreased the virgin value from ～13.70 to ～10.98 Å³ and then increased to ～18.11 Å³ with increasing the electron fluence, over the range of 5?×?10¹⁴ – 5?×?10¹⁵ e/cm². The evolution of gaseous species from the polyimide during electron irradiation was confirmed by the residual gas analysis technique. The polyimide samples irradiated with 6 MeV electrons in AgNO₃ solution were studied with the Rutherford back scattering technique. The diffusion of silver in these polyimide samples was observed for fluences >2?×?10¹⁵ e/cm², at which microvoids of size ≥3 Å are produced. Silver atoms did not diffuse in the polyimide samples, which were first irradiated with electrons and then immersed in AgNO₃ solution. These results indicate that during electron irradiation, the microvoids with size ≥3 Å were retained in the surface region through which silver atoms of size ～2.88 Å could diffuse into the polyimide. The average depth of diffusion of silver atoms in the polyimide was ～2.5 μm.     

Epitaxial growth of well-ordered ultra-thin Al2O3 film on NiAl (1 1 0) by a single-step oxidation

Well-ordered ultra-thin Al₂O₃ films were grown on NiAl (1 1 0) surface by exposing the sample at various oxygen absorption temperatures ranging from 570 to 1100 K at dose rates 6.6 × 10⁻⁵ and 6.6 × 10⁻⁶ Pa. From the results of low-energy electron diffraction (LEED), Auger electron spectrometer (AES) and X-ray photon spectroscopy (XPS) observations, it was revealed that oxidation mechanism above 770 K is different from well-known two-step process. At high temperature, oxidation and crystallization occurred simultaneously while in two-step process oxidation and crystallization occurred one after another. At high-temperature oxidation well-ordered crystalline oxide can be formed by a single-step without annealing. Well-ordered Al₂O₃ layer with thickness over 1 nm was obtained in oxygen absorption temperature 1070 K and a dose rate 6.6 × 10⁻⁶ Pa at 1200 L oxygen.     

掺磷的硅中电子自旋共振

本文叙述了在室温、液N₂和液H₂及其降压温度下,利用3厘米波段双重调制波谱仪对掺磷原子浓度为～10¹⁵—～10¹⁸/厘米³的硅样品进行的电子自旋共振研究,文中还简述了低温控制系统。实验观察到传导电子、表面缺陷中心和电子-核超精细结构谱线,以及有效电子-施子核对的互作用谱线,并获得相应的g因子。在14°K下,得到施主核上电子波函数幅度的平方|Ψ(0)|²和电子-核超精细互作用常数α_D,与G.Feher在1.25°K下利用电子-核双共振方法得到的结果相近。