Landau-level interplay in InGaAs double quantum wells

Shubnikov–de Haas (SdH) and Hall measurements have been used to investigate a pair of adjacent two-dimensional electron gases (2DEGs) which were formed in two n_0.53Ga_0.47As quantum-wells, separated by a thin In_0.52Al_0.48As barrier, grown lattice-matched on InP. This double quantum-well system consists of two asymmetric InGaAs quantum wells, 9 nm and 7 nm respectively, separated by a 4.5 nm InAlAs barrier. The existence of two occupied electronic subbands with differing electron densities can clearly be identified by beating effects in the SdH oscillations. By applying a substrate bias the electron densities can be tuned and the beating is shifted. In the simultaneously performed Hall measurements additional features can be observed: Hall measurements with different total electron densities reveal plateaus for integer filling factors ν (with ν = ν₁ + ν₂, ν₁and ν₂both integers, corresponding to the two subbands). Some even filling factors become suppressed and recover with changing electron density. Also, for some densities an odd filling factor is observed. The systematic tuning of the electron densities via the application of a bias voltage to the front gate reveals two Landau fans, one for each electronic system, respectively, crossing each other. The electron densities for both electronic systems can be identified by analysing the SdH spectra. As a function of the front-gate voltage, these densities seem to show evidence for an anticrossing of the two electronic states and therefore for a strong coupling between the states.     

3 MeV electron irradiation-induced defects in CuInSe2 thin films

3 MeV electron irradiation induced-defects in CuInSe₂ (CIS) thin films have been investigated. Both of the carrier concentration and Hall mobility were decreased as the electron fluence exceeded 1×10¹⁷ cm⁻². The carrier removal rate was estimated to be about 1 cm⁻¹. To evaluate electron irradiation-induced defect, the electrical properties of CIS thin films before and after irradiation were investigated between 80 and 300 K. From the temperature dependence of the carrier concentration in non-irradiated thin films, we obtained N_D=1.8×10¹⁷ cm⁻³, N_A=1.7×10¹⁶ cm⁻³ and E_D=18 meV from the SALS fitting to the experimental data on the basis of the charge balance equation. After irradiation, a new defect level was formed, and N_T0=1.4×10¹⁷ cm⁻³ and E_T=54 meV were also obtained from the same procedure. From the temperature dependence of Hall mobility, the ionized impurity density was discussed before and after the irradiation.     

Electron channel with high carrier mobility at the interface of type-II broken-gapp-GaInAsSb/p-InAs single heterojunctions

We have studied experimentally the magneto-transport properties of type-II broken-gap Ga_1 − xIn_xAsSb/p-InAs heterostructures with various doping levels of the quaternary layer by Te or Zn. A strong electron channel with high electron mobility was observed at the interface of the heterostructures. Interface roughness scattering was found to dominate the electron mobility atT = 4.2–47 K in samples with an undoped or a slightly doped quaternary layer. A drastic mobility drop with increasing Zn doping level was observed. Shubnikov–de Haas oscillations at low temperatures (1.5–20 K) were studied and a weak anisotropy of magnetoresistance was found. Some important parameters of the heterostructures under study were determined.     

Magneto-oscillations in a trapezoidal two-dimensional electron gas grown over GaAs wires

In this work we investigate a nonplanar two-dimensional electron gas (2DEG) that allows study of the electronic behaviour in random and sign-alternating magnetic fields. Shubnikov–de Haas oscillations were studied by measuring the magnetoresistance at different angles φ between the field and the substrate. We find that at low magnetic field the position of the oscillation peaks followsB_p ∼ Bsin (φ − θ), where θ is the angle between the field and the facets that effectively contribute to magnetoresistance. This is due to the fact that electrons follow different paths depending on the realization of a specific magnetic field.     

Preparation and characterization of F doped SnO2 films and electrochromic properties of FTO/NiO films

The dependence of structural and electrical properties of SnO₂ films, prepared using spray pyrolysis technique, on the concentration of fluorine is reported. X-ray diffraction, FTIR and scanning electron microscope (SEM) studies have been performed on SnO₂:F (FTO) films coated on glass substrates. Measured values of Hall coefficient and resistivity are reported. The 7.5 m% of F doped film had a resistivity of 15 × 10⁻⁴ Ω cm, carrier density of 18.7 × 10¹⁹ cm⁻³ and mobility of 21.86 cm² V⁻¹ S⁻¹. The NiO film was coated on an FTO substrate and its electrochromic (EC) behavior was studied and the results are reported and discussed in this paper.     

Accumulation layer and interface effects in doped nonabrupt GaAs/AlxGa1 − xAs single quantum wells

The electron energy levels in doped nonabrupt GaAs/Al_xGa_1 − xAs single quantum wells 100 Å wide are calculated. Interface widths varying from zero to four GaAs unit cells are taken into account, as well as band bendings of 0–90 meV. It is shown that interface effects on the energy levels are important and sensitive to the level of doping. When interfaces of only two GaAs unit cells and a band bending of 40 meV are considered, the ground-state (first excited state) energy level shifts toward energies as high as 4 meV (20 meV).     

Well-width dependence of interface roughness scattering in GaAs/Ga1 − xAlxAs quantum wells

Well-width dependence of quantum and transport mobilities of electrons in GaAs/GaAlAs multiple quantum wells is studied for wells with widths ranging between 50 Å and 145 Å Experimental results are obtained from the amplitude analysis of the Shubnikov–de Haas (SdH) oscillations and from conventional Hall measurements at temperatures betweenT = 15 K and 4.2 K. A novel technique is employed to estimate, theoretically, the interface roughness parameters from electron quantum and transport lifetimes. The modelling is carried out for a range of layer fluctuations, width (Δ) and lateral size (Λ), as to obtain the best fit to the experimental results for individual samples. Our results indicate that the interface roughness scattering limits equal both quantum and transport mobilities at low temperatures, and that the nature of scattering by interface roughness (small or large angle) depends not only on the size and the width of the fluctuations but also on the distribution of these fluctuations within the samples. Therefore, unlike the predictions of the existing theoretical models, which assume constant values of Δ and Λ for all well widths, the well-width dependence of interface roughness scattering cannot be verified experimentally.     

Magnetic tuning of exciton–photon resonance in II–VI microcavities

We demonstrate the effectiveness of the giant Zeeman effect in II–VI semimagnetic semiconductors to tune the exciton resonance of quantum wells onto the Fabry–Pérot resonance of a microcavity. A large oscillator strength of 3 × 10¹³cm⁻²per quantum well is deduced from the measured 10.6 meV vacuum Rabi splitting.     

Investigating gate metal induced reduction of surface donor density in GaN/AlGaN/GaN heterostructure by electroreflectance spectroscopy

The internal field of GaN/AlGaN/GaN heterostructure on Si-substrate was investigated by varying the thickness of an undoped-GaN capping layer using electroreflectance spectroscopy. The four samples investigated are AlGaN/GaN heterostructure without a GaN cap layer (reference sample) and three other samples with GaN/AlGaN/GaN heterostructures in which the different thickness of GaN cap layer (2.7 nm, 7.5 nm, and 12.4 nm) has been considered. The sheet carrier density (n_s) of a two-dimensional electron gas has decreased significantly from 4.66 × 10¹² cm⁻² to 2.15 × 10¹² cm⁻² upon deposition of a GaN capping layer (12.4 nm) over the reference structure. Through the analysis of internal fields in each GaN capping and AlGaN barrier layers, it has been concluded that the undiminished surface donor states (n_s) of a reference structure and the reduced n_s caused by the Au gate metal are approximately 5.66 × 10¹² cm⁻² and 1.08 × 10¹² cm⁻², respectively.     

Hydrophilic polyaniline nanofibrous architecture using electrosynthesis method for supercapacitor application

An electrosynthesis process of hydrophilic polyaniline nanofiber electrode for electrochemical supercapacitor is described. The TGA–DTA study showed polyaniline thermally stable up to 323 K. Polyaniline nanofibers exhibit amorphous nature as confirmed from XRD study. Smooth interconnected fibers having diameter between 120–125 nm and length typically ranges between 400–500 nm observed from SEM and TEM analysis. Contact angle measurement indicated hydrophilic nature of polyaniline fibers. Optical study revealed the presence of direct band gap with energy 2.52 eV. The Hall effect measurement showed room temperature resistivity ∼3 × 10⁻⁴ Ω cm and Hall mobility 549.35 cm⁻²V⁻¹ s⁻¹_. The supercapacitive performance of nanofibrous polyaniline film tested in 1 M H₂SO₄ electrolyte and showed highest specific capacitance of 861 F g⁻¹ at the voltage scan rate of 10 mV/s.     

Study of two-dimensional hole gas concentration and hole mobility in zinc delta-doped GaAs and pseudomorphic GaAs/In0.2Ga0.8As heterostructures

Zinc delta-doped GaAs and pseudomorphic GaAs/In}_0.2Ga_0.8As heterostructures grown by low-pressure metalorganic chemical vapour deposition have been demonstrated. The influence of delta-doping period and spacer thickness on two-dimensional hole gas concentrations and hole mobility was studied. From secondary-ion mass spectroscopy and Hall measurement, we conclude that zinc delta-doping can form an excellent abrupt profile (full-width at half maximum is of 10 nm) and offer a high two-dimensional hole gas sheet density (as high as 1 × 10¹³cm⁻²) By adopting a strained InGaAs material as the active channel and by carefully modulating the spacer layer thickness, one can obtain a significantly enhanced hole mobility.     

Spectroscopic properties of Co2+: ZnAl2O4 nanocrystals in sol–gel derived glass–ceramics

Transparent glass–ceramics containing zinc–aluminum spinel (ZnAl₂O₄) nanocrystals doped with tetrahedrally coordinated Co²⁺ ions were obtained by the sol–gel method for the first time. The gels of composition SiO₂–Al₂O₃–ZnO–CoO were prepared at room temperature and heat-treated at temperature ranging 800–950 °C. When the gel samples were heated up to 900 °C, ZnAl₂O₄ nanocrystals were precipitated. Co²⁺ ions were located in tetrahedral sites in ZnAl₂O₄ nanocrystals. X-ray diffraction analysis shows that the crystallite sizes of ZnAl₂O₄ crystal become large with the heat-treatment temperature and time, and the crystallite diameter is in the range of 10–15 nm. The dependence of the absorption and emission spectra of the samples on heat-treatment temperature were presented. The difference in the luminescence between Co²⁺ doped glass–ceramic and Co²⁺ doped bulk crystal was analysed. The crystal field parameter D_q of 423 cm⁻¹ and the Racah parameters B of 773 cm⁻¹ and C of 3478.5 cm⁻¹ were calculated for tetrahedral Co²⁺ ions.     

Investigation of delta-doped quantum wells for power FET applications

We report the use of strain-balanced quantum-well structures to generate high carrier density, high mobility layers suitable for power field effect transistor (FET) applications. Standard designs of modulation-doped heterojunctions have a sheet carrier density limited to a maximum of ∼3 ×  10¹²cm⁻², while doped channel devices allow higher densities, but with degraded mobility. By combining the technique of delta-doping with the use of a compositionally graded InGaAs quantum well, grown strain balanced on InP, high mobilities and excellent saturation drift velocities have been obtained for sheet densities of 4–5 ×  10¹²cm⁻². This paper describes the structure and electrical properties of the layers and assesses their potential for FETs.     

Classical and quantum hall effect measurements in GaInNAs/GaAs quantum wells

We have performed magneto-transport experiments in modulation-doped Ga_0.7In_0.3N_yAs_1−y/GaAs quantum wells with nitrogen mole fractions 0.4%, 1.0% and 1.5%. Classical magnetotransport (resistivity and low-field Hall effect) measurements have been performed in the temperatures between 1.8 and 275 K, while quantum Hall effect measurements in the temperatures between 1.8 and 47 K and magnetic fields up to 11 T.The variations of Hall mobility and Hall carrier density with nitrogen mole fractions and temperature have been obtained from the classical magnetotransport measurements. The results are used to investigate the scattering mechanisms of electrons in the modulation-doped Ga_0.7In_0.3N_yAs_1−y/GaAs quantum wells. It is shown that the alloy disorder scattering is the major scattering mechanism at investigated temperatures.The quantum oscillations in Hall resistance have been used to determine the carrier density, effective mass, transport mobility, quantum mobility and Fermi energy of two-dimensional (2D) electrons in the modulation-doped Ga_0.7In_0.3N_yAs_1−y/GaAs quantum wells. The carrier density, in-plane effective mass and Fermi energy of the 2D electrons increases when the nitrogen mole fraction is increased from y=0.004 to 0.015. The results found for these parameters are in good agreement with those determined from the Shubnikov-de Haas effect in magnetoresistance.     

Magnetotransport in modulation-doped In0.53Ga0.47As/In0.52Al0.48As heterojunctions: in-plane effective mass,quantum and transport mobilities of 2D electrons

Shubnikov–de Haas (SdH) and Hall effect measurements, performed in the temperature range between 3.3 and 20 K and at magnetic fields up to 2.3 T, have been used to investigate the electronic transport properties of lattice-matched In_0.53Ga_0.47As/In_0.52Al_0.48As heterojunctions. The spacer layer thickness (t_S) in modulation-doped samples was in the range between 0 and 400 Å. SdH oscillations indicate that two subbands are already occupied for all samples except for that witht_S =  400 Å. The carrier density in each subband, Fermi energy and subband separation have been determined from the periods of the SdH oscillations. The in-plane effective mass (m ^* ) and the quantum lifetime (τ_q) of 2D electrons in each subband have been obtained from the temperature and magnetic field dependences of the amplitude of SdH oscillations, respectively. The 2D carrier density (N₁) in the first subband decreases rapidly with increasing spacer thickness, while that (N₂) in the second subband, which is much smaller thanN₁ , decreases slightly with increasing spacer thickness from 0 to 200 Å. The in-plane effective mass of 2D electrons is similar to that of electrons in bulk In_0.53Ga_0.47As and show no dependence on spacer thickness. The quantum mobility of 2D electrons is essentially independent of the thickness of the spacer layer in the range between 0 and 200 Å. It is, however, markedly higher for the samples with a 400 Å thick spacer layer. The quantum mobility of 2D electrons is substantially smaller than the transport mobility which is obtained from the Hall effect measurements at low magnetic fields. The transport mobility of 2D electrons in the first subband is substantially higher than that of electrons in the second subband for all samples with double subband occupancy. The results obtained for transport-to-quantum lifetime ratios suggest that the scattering of electrons in the first subband is, on average, forward displaced in momentum space, while the electrons in the second subband undergo mainly large-angle scattering.     

Large spontaneous Hall angle in [Co,CoFe/Pt] multilayer

We have quantitatively investigated the Hall effect in [Co, CoFe/Pt] multilayer films. The [Co, CoFe/Pt] multilayers exhibit large spontaneous Hall resistivity (ρ_H) and Hall angle (ρ_H/ρ). Even though the Hall resistivity in [Co, CoFe/Pt] multilayer films (2.7–4 × 10⁻⁷ Ω cm) is smaller than that of amorphous RE–TM alloy films which show large spontaneous Hall resistivity (<2 × 10⁻⁶ Ω cm), the Hall angle of multilayer (6–8%) is almost twice than that in amorphous rare earth–transition metal alloy films (∼3%). The Hall angle provides evidence of the effects of the exchange interaction of the Hall scattering. The exchange is between conduction electron spins and the localized spins of the transition metal. The large Hall angle of [Co, CoFe/Pt] multilayer can be considered due to the high spin polarization and high Curie temperature of Co and CoFe transition metal layers. Even though the role of interfaces and surfaces in the magnetic properties of multilayer films may dominate that of the bulk, the Hall effects in [Co, CoFe/Pt] multilayer may be mainly dominated by the bulk effect.     

Synthesis,characterization and magnetic properties of lightly doped La2−xSrxCuO4 (x = 0.04) nanoparticles

Lightly doped La_2−xSr_xCuO₄ (x = 0.04) nanoparticles with different particle sizes have been successfully prepared by a sol–gel method and characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), infrared transmission (IR) spectra and superconducting quantum interference device (SQUID) magnetometer. All samples are single phase and have an orthorhombic unit cell. As the particle size reduces, it is found that the IR band at around 685 cm⁻¹ corresponding to the in-plane Cu–O asymmetrical stretching mode shifts to higher frequency and the magnetization exhibits a large enhancement at low temperature. The magnetic susceptibility of all samples follows a modulated Curie law between ∼20 K and ∼100 K and the Curie constant displays a strong dependence on the particle size. It is suggested that as the particle size decreases surface effects should play an important role in the magnetic properties of the nanoparticles.     

Ion and electron conduction in SrFe1−xScxO3−δ

The oxygen ion and electron transport in SrFe_1−xSc_xO_3−δ  (x = 0.1–0.3) system at 700–950 °C were studied analyzing the total conductivity dependencies on the oxygen partial pressure, pO₂. The conductivity measurements were performed both under reducing conditions (10^− 19 ≤ pO₂ ≤ 10^− 8 atm) comprising the electron-hole equilibrium point, and in oxidizing atmospheres (10^− 5 ≤ pO₂ ≤ 0.5 atm) which are characterized by extensive variations of the oxygen content studied by coulometric titration technique. The incorporation of 10% Sc³⁺ cations into the iron sublattice suppresses transition of the cubic perovskite phase into vacancy-ordered brownmillerite, thus improving ion conduction at temperatures below 850 °C. When scandium content increases, the ion conductivity becomes considerably lower. The hole mobility is thermally-activated and varies in the range of 0.001 to 0.05 cm² V^− 1 s^− 1, increasing with oxygen concentration and decreasing on Sc doping.     

Synthesis and characterization of (Pr0.75Sr0.25)1 − xCr0.5Mn0.5O3 − δ as anode for SOFCs

The complex perovskite (Pr_0.75Sr_0.25)_1 − xCr_0.5Mn_0.5O_3 − δ (PSCM) has been prepared and studied as possible anode material for high-temperature solid oxide fuel cells (SOFCs). PSCM exhibits GdFeO₃-type structure and is both physically and chemically compatible with the conventional YSZ electrolyte. The reduction of PSCM resulted in structural change from orthorhombic Pbnm to cubic Pm-3m. Selected area electron diffraction (SAED) analysis on the reduced phases indicated the presence of a √2 × √2 × 2 superlattice. The total conductivity values of ∼ 75% dense Pr_0.75Sr_0.25Cr_0.5Mn_0.5O_3 − δ at 900 °C in air and 5% H₂/Ar are 9.6 and 0.14 S cm^− 1 respectively. The conductivity of PSCM drops with decreasing Po₂ and is a p-type conductor at all studied Po₂. The average TEC of Pr_0.75Sr_0.25Cr_0.5Mn_0.5O_3 − δ is 9.3 × 10^− 6 K^− 1, in the temperature range of 100–900 °C and is close to that of YSZ electrolyte. The anode polarization resistance of PSCM in wet 5%H₂ is 1.31 Ω cm² at 910 °C and in wet CH₄ at 930 °C; the polarization resistance is 1.29 Ω cm². PSCM was unstable at 900 °C in unhumidified hydrogen. Cell performance measurements carried out using graded PSCM and La_0.8Sr_0.2MnO₃ as anode and cathode respectively yielded a maximum power density of 0.18 W cm^− 2 in wet 5%H₂/Ar at 910 °C and the corresponding current density was 0.44 A cm^− 2 at 0.4 V. The activation energy for the electrochemical cell operating in wet (3% H₂O) 5%H₂/Ar fuel is 85 kJ mol^− 1.     

Electrochemical and electrical properties of Nb- and/or C-containing LiFePO4 composites

A study of LiFePO₄-based electrodes prepared through various synthesis conditions is presented. From X-Ray diffraction, high resolution transmission electron microscopy, electrochemical Li⁺ extraction/insertion and electrical conductivity data we conclude that the use of starting precursors such as Li₂CO₃, FeC₂O₄·2H₂O and/or Nb(OC₆H₅)₅ produces LiFePO₄-based composites containing significant amounts of carbon. We never succeeded in doping LiFePO₄ with Nb to yield Li_1−xNb_xFePO₄ but produced, instead, crystalline β-NbOPO₄ and/or an amorphous (Nb, Fe, C, O, P) “cobweb” around LiFePO₄ particles which is responsible for superior electrochemical activity. AC-conductivity measurements conclude to a total electrical conductivity of ∼10^− 9 S cm^− 1 at 25 °C with an activation energy of ca. 0.65 eV for pure LiFePO₄ and LiFePO₄/β-NbOPO₄ composites. C-containing LiFePO₄ samples, including those that were tentatively but unsuccessfully doped with Nb, are much more conductive (up to 1.6 · 10^− 1 S cm^− 1) with an activation energy ΔE∼0.08 eV.