纳米晶状磷酸钙盐/Al2O3-Ti生物复合材料的制备与结构表征

0引言众所周知,钛及其合金具有优良的机械力学性能,但其生物活性不足。因此,在金属基体上涂敷一层生物活性涂层,结合金属与生物活性材料的各自优势,已成为世界各国学者研究最为活跃的生物复合材料体系之一。该体系可用于临床医学,作为人体硬组织等的修复替换材料。目前,已开发出多种在金属基体上制备生物活性涂层的工艺和方法。如:等离子沉积法[1]、离子束溅射法[2]、激光熔覆法[3]、溶胶鄄凝胶法[4]、电化学沉积与水热处理合成法[5]、电泳沉积[6]、电结晶[7]等多种方法。但现有涂层材料尚存在一些问题:(1)由于替换材料的高硬度而导致其周围硬组织坏死[8];(2)由于疲劳磨损或热膨胀不匹配引起涂层脱落[9];(3)由于异质相导致生物活性降解[10]。因此,研究新的制备工艺,开发新的生物复合材料体系就显得十分重要。考虑到Al2O3具有优异的抗磨损、耐腐蚀等性能,以及较好的生物相容性,常作为临床选用的人造硬组织承载材料[11],故在本研究工作中,我们首次采用阳极氧化与水热处理复合工艺研制酸式磷酸钙/Al2O3鄄Ti生物复合材料体系。该体系不同于由日本Ishizawa等研制的HAp/TiO2鄄Ti复合体系[12]。主要体现在两...     

阳极氧化法制备TiO2多孔薄膜

本文综述了制备TiO₂薄膜的各种方法,详细介绍了阳极氧化法制备TiO₂多孔膜的进展,在非含氟电解液体系中,对纯钛进行阳极氧化处理可制得表面呈无规则生长的多孔膜结构;在含氟电解液体系中,则可自组织形成高度有序的TiO₂纳米管阵列,并指出阳极氧化法是可在常温低压下进行、操作工艺简单、薄膜性能稳定、再现性好的一种最具工业化应用潜力的制备方法。     

铅及铅锑合金阳极膜中硫酸铅的氧化过程

应用电位阶跃和交流阻抗法分别研究铅和Pb-5wt% Sb合金在4.5mol·dm^-^3H~2SO~4(30℃)中于1.3V(vs. Hg/Hg~2SO~4, 下同)生长20min后的阳极膜在0.9V还原5min后再在1.4V将膜中硫酸铅氧化的过程。实验结果表明在0.9V还原二氧化铅而得到的硫酸铅能在1.4V于1min内氧化为二氧化铅。这是由于此种硫酸铅处于硫酸铅颗粒表层的缘故。至于颗粒内部由铅直接生成的硫酸铅的氧化为二氧化铅就要缓慢得多。合金中的锑能使二氧化铅晶核形成和生长速率显著降低。     

合金元素Nd对Pb-Ag阳极在H2SO4溶液中电化学行为的影响

采用循环伏安、线性扫描、电化学阻抗和环境扫描电镜对比研究了Pb-Ag和Pb-Ag-Nd阳极的阳极膜和析氧反应. 结果表明,合金元素Nd促进了Pb/PbO_n/PbSO₄ (1≤n<2)膜层的生长. 在高极化电位区间(高于1.20V (vs Hg/Hg₂SO₄/饱和K₂SO₄溶液)),Nd有利于低价铅的化合物(PbO_n,PbSO₄)向α-PbO₂和β-PbO₂转变. 此外,环境扫描电镜形貌和线性扫描分析证明Pb-Ag-Nd表面生成的阳极膜较Pb-Ag的阳极膜更厚且更致密. 因此,Pb-Ag-Nd阳极表面的阳极膜可以给合金基底提供更好的保护. 另一方面,电化学阻抗测试揭示了两种阳极的析氧反应均受中间产物的形成和吸附控制. Nd可以降低阳极膜/电解液界面处中间产物的吸附阻抗且增加中间产物的覆盖率,从而提高析氧反应活性. 综上所述,合金元素Nd可提高Pb-Ag阳极的耐腐蚀性,降低阳极电位进而起到节能降耗的作用.     

石墨烯修饰Y型TiO_2纳米管光电极制备及其对氨氮催化氧化性能

采用三步阳极氧化法和一步循环伏安电沉积法制备了还原氧化石墨烯(rGO)修饰的Y型TiO_2纳米管(rGO/Y-TiO_2NTs)电极。通过场发射电子扫描显微镜(FESEM)、X射线能谱(EDS)、X射线衍射(XRD)、紫外可见漫反射光谱(UV-Vis DRS)及拉曼光谱(Raman)等对电极样品进行了表征。以rGO/Y-TiO_2NTs电极为光阳极,测试了不同循环伏安沉积圈数对电极光电流响应的影响,考察了在1.0 V偏压下电极对氨氮的光电催化氧化性能。结果表明,高度有序的Y-TiO_2NTs为锐钛矿型,具有大的比表面积,表面修饰平滑透明rGO薄膜后可显著提高其光电催化效率,沉积圈数为30时电极在30 min内对氨氮的光电催化氧化效率为95.9%。     

BiVO4/ZnFe2O4同型异质结光阳极的构筑及其光电催化分解水性能

光生电子-空穴对的复合被认为是限制BiVO₄材料光电催化转换效率的重要原因之一。基于此,通过简单的水热-煅烧方法构筑了 BiVO₄/ZnFe₂O₄同型异质结光阳极,BiVO₄/ZnFe₂O₄复合光阳极在 1.23 V(vs RHE)下的光电流密度为 3.33 mA·cm^-2,较纯BiVO₄提升了2倍 (1.20 mA·cm^-2)。相关的结构及性能测试表明,BiVO₄和ZnFe₂O₄形成了带隙错开的n-n异质结,使得光生载流子得到有效分离,更有效地参与水氧化过程,进而提高了BiVO₄的光电催化水分解性能。     

BiVO4/ZnFe2O4同型异质结光阳极的构筑及其光电催化分解水性能

光生电子-空穴对的复合被认为是限制BiVO₄材料光电催化转换效率的重要原因之一。基于此,通过简单的水热-煅烧方法构筑了BiVO₄/ZnFe₂O₄同型异质结光阳极,BiVO₄/ZnFe₂O₄复合光阳极在1.23 V(vs RHE)下的光电流密度为3.33 mA·cm^-2,较纯BiVO₄提升了2倍(1.20 mA·cm^-2)。相关的结构及性能测试表明,BiVO₄和ZnFe₂O₄形成了带隙错开的n-n异质结,使得光生载流子得到有效分离,更有效地参与水氧化过程,进而提高了BiVO₄的光电催化水分解性能。     

Capacitance and photocurrent study of electronic properties of anodic oxide films on Nb and Ta. Evaluation of the ionized donor concentration profile in Nb2O5 film

Electronic properties of electrochemically formed oxide films on Nb were studied by photocurrent and differential capacitance measurements in 0.025 M KH₂PO₄+0.025 M Na₂HPO₄ electrolyte, pH 6.9. Oxide films of n-type conductivity were formed galvanostatically for final potentials ranging from 4 to 230 V. Measurements were performed in two potential regions, which correspond to formation of a depleted layer of variable thickness at relatively low potentials, and to complete depletion of oxide films of electronic charge carriers at higher potentials. In the first potential region the behavior of both capacitance and photocurrent, was governed by a build up of a depleted layer of potential dependent thickness. In the second, high potential, region, which extends up to the oxide film formation potential, the photocurrent and capacitance of oxide films in most features followed the trends typical of dielectric films containing defects and traps. The photocurrent and capacitance measurements on presumably dielectric oxide films formed on Ta were staged for comparison. The capacitance–potential measurements performed in the first potential region enabled us to construct the ionized donor concentration profile across the Nb₂O₅ film width. The limitations on the use of the C–E profiling method for electrochemically formed oxide layers are considered.     

石墨烯修饰Y型TiO2纳米管光电极制备及其对氨氮催化氧化性能

采用三步阳极氧化法和一步循环伏安电沉积法制备了还原氧化石墨烯（rGO）修饰的Y型TiO₂纳米管阵列（rGO/Y-TiO₂ NTs）电极。通过场发射电子扫描显微镜（FESEM）、能量色散X荧光光谱（EDX）、X射线衍射（XRD）、紫外可见漫反射光谱（UV-Vis）及拉曼光谱（Raman）等对电极样品进行了表征。以rGO/Y-TiO₂ NTs电极为光阳极,测试了不同循环伏安沉积圈数对电极光电流响应的影响,考察了在1.0 V偏压下电极对氨氮的光电催化氧化性能。结果表明,高度有序的Y-TiO₂ NTs为锐钛矿型,具有大的比表面积,表面修饰平滑透明rGO薄膜后可显著提高其光电催化效率,沉积圈数为30时电极在30 min内对氨氮的光电催化氧化效率为95.9%。     

Photoluminescence dependence on imposing bias for ZnGa2O4 and ZnGa2O4 activated with Mn or Cr n-type semiconductor electrodes

Photoluminescence (PL) dependence was investigated by imposing cathodic and anodic bias for ZnGa₂O₄, ZnGa₂O₄:Mn and ZnGa₂O₄:Cr n-type semiconductor electrodes. Under the cathodic bias PL intensity was weak at about 1/3 times compared with imposing no bias, while under the anodic bias the intensity was strong at about 2 times maximally by using the ZnGa₂O₄:Mn and ZnGa₂O₄:Cr electrodes although no change about the intensity was observed by using the ZnGa₂O₄ electrode. These results suggest that the emission attributed to recombination between electrons and holes is decreased by flow of cathodic current under the cathodic bias while the emission is increased to decrease at non-radiative transition rates under the anodic bias when the energy relaxation occurs.     

Synthesis, crystal structure and optical properties of a novel sodium lead pentaborate, NaPbB5O9

A novel sodium lead pentaborate, NaPbB₅O₉, has been successfully synthesized by standard solid-state reaction. The single-crystal X-ray structural analysis showed that NaPbB₅O₉ crystallizes in the monoclinic space group P2₁/c with a=6.5324(10) Å, b=13.0234(2) Å, c=8.5838(10) Å, β=104.971(10)°, and Z=4. The crystal structure is composed of double ring [B₅O₉]³⁻ units, [PbO₇] and [NaO₇] polyhedra. [B₅O₉]³⁻ groups connect with each other forming two-dimensional infinite _∞[B₅O₉]³⁻ layers, while [PbO₇] and [NaO₇] polyhedra are located between the layers. [PbO₇] polyhedra linked together via corner-sharing O atom forming novel infinite _∞[PbO₆] chains along the c axis. The thermal behavior, IR spectrum and the optical diffuse reflectance spectrum of NaPbB₅O₉ were reported.     

Growth of HfO2 films using an alternate reaction of HfCl4 and O2 under atmospheric pressure

HfO₂ films were deposited onto a Si(1 0 0) substrate using an alternate reaction of HfCl₄ and O₂ under atmospheric pressure. Self-limiting growth of the HfO₂ was achieved in the range of the growth temperature above 873 K. The X-ray diffraction of the HfO₂ films showed a typical diffraction pattern assigned to the monoclinic polycrystalline phase. Residual chloride concentration in HfO₂ films were not higher than 0.1 at%. When the growth temperature was 973 K, the HfSiO_x is formed in HfO₂ film. This gives effective permittivity value of 9.6 for the HfO₂ film grown at 573 K.     

Bi2S3量子点敏化TiO2纳米阵列结构的制备及光电性能

利用水热法制备一维TiO₂纳米棒阵列,并采用化学浴沉积法(CBD)结合自组装技术在TiO₂纳米棒上敏化Bi₂S₃量子点,形成TiO₂/Bi₂S₃复合纳米棒阵列。系统研究了复合结构的表面形貌、晶体结构、光学及光电性能。结果表明:在修饰有三氨丙基三乙氧基硅烷自组装单分子膜(APTS-SAMs)的TiO₂纳米棒表面形成一层致密的Bi₂S₃量子点敏化层,这一技术的关键是含-NH₂末端的APTS-SAMs可有效促进Bi₂S₃的异相成核作用;Bi₂S₃的沉积时间对复合结构的光吸收及光电响应性能有决定性的影响,薄膜的光电流随着沉积时间呈先增加后减小的趋势,在沉积时间为20min时,光电流密度最大。这是因为随着沉积时间的增加,TiO₂纳米棒表面Bi₂S₃量子点密度增大,光吸收增加;而当沉积时间进一步延长时,Bi₂S₃在TiO₂纳米棒表面的大量负载而形成堆积和团聚,导致表面缺陷增多,光生电子复合几率增大,从而使光电流密度减小。     

NixCo3-xO4表面修饰对CdSe/TiO2纳米管阵列光电化学氧化水活性的影响

利用氨挥发诱导法在CdSe/TiO2纳米管阵列表面负载一层NixCo3-xO4。采用SEM、XRD、XPS、UV-Vis对样品进行表征,通过线性扫描伏安法测定光阳极的释氧电势来评价其光电水氧化活性。结果表明:表面NixCo3-xO4是尖晶石结构;相对于CdSe/TiO2纳米管阵列光阳极,NixCo3-xO4/CdSe/TiO2光阳极能将光电氧化水的过电势降低430 mV。Ni离子的引入使得NixCo3-xO4表面富含三价阳离子(Ni3+,Co3+),从而促进CdSe/TiO2光阳极光电水氧化的进行。     

Bi2S3量子点敏化TiO2纳米阵列结构的制备及光电性能研究

利用水热法制备一维TiO₂纳米棒阵列,并采用化学浴沉积法(CBD)结合自组装技术在TiO₂纳米棒上敏化Bi₂S₃量子点,形成TiO₂/Bi₂S₃复合纳米棒阵列.系统研究了复合结构的表面形貌、晶体结构、光学及光电性能.结果表明:在修饰有三氨丙基三乙氧基硅烷自组装单分子膜(APTS-SAMs)的TiO₂纳米棒表面形成一层致密的Bi₂S₃量子点敏化层,这一技术的关键是含-NH₂末端的APTS-SAMs可有效促进Bi₂S₃的异相成核作用;Bi₂S₃的沉积时间对复合结构的光吸收及光电响应性能有决定性的影响,薄膜的光电流随着沉积时间呈先增加后减小的趋势,在沉积时间为20 min时,光电流密度最大.这是因为随着沉积时间的增加,TiO₂纳米棒表面Bi₂S₃量子点密度增大,光吸收增加;而当沉积时间进一步延长时,Bi₂S₃在TiO₂纳米棒表面的大量负载而形成堆积和团聚,导致表面缺陷增多,光生电子复合几率增大,从而使光电流密度减小.     

电位对α-Fe2O3和掺钛α-Fe2O3光氧化水电荷转移速率常数的影响

外加一定的阳极电位可提高未掺杂的α-Fe₂O₃和Ti掺杂的α-Fe₂O₃(Ti-Fe₂O₃)电极的光电流或光电化学氧化水的速率, 但文献中通常假定电位全部降落在半导体固体一侧(带边钉扎), 其对界面电荷转移速率常数的影响鲜见报道. 本文应用电化学阻抗谱研究了外加电位对这两种电极光电化学氧化水时界面电荷转移速率常数的影响.结果表明: 随着外加阳极电位增大,两种电极的界面电荷转移速率常数均增大,但速率常数增幅比理论预期的要小, 表明电位并不是全部降落在电极的亥姆霍兹层, 而是同时降落在空间电荷层和亥姆霍兹层(费米能级钉扎). 表面态电容测量结果表明光生电荷可在表面态中积累, 导致了电位在电极界面重新分布并提高了界面电荷转移速率常数.相同电位下, 光强越强, 光生空穴在表面态积累越多, 降落在亥姆霍兹层中的电位增加,电荷转移速率常数也更大. 与α-Fe₂O₃相比,外加阳极电位对Ti-Fe₂O₃的界面转移速率常数提高更为明显.     

Oxide formation in the oxygen evolution region at Pt electrodes in M H2SO4

Oxide growth at Pt electrodes in M H₂SO₄ has been measured at potentials up to 2.2 V in the oxygen evolution region. The previously described model, in which nucleation is rate determining, remains applicable. There is no evidence for any change of oxide property or for partial arrests in the Q-E curve, throughout this range. The effects of potential and film thickness on the oxygen evolution reaction may be completely separated. This implies a dual site model for the two anodic reactions.     

Conversion of NO in NO/N2, NO/O2/N2, NO/C2H4/N2 and NO/C2H4/O2/N2 Systems by Dielectric Barrier Discharge Plasmas

An experimental study on the conversion of NO in the NO/N₂, NO/O₂/N₂, NO/C₂H₄/N₂ and NO/C₂H₄/O₂/N₂ systems has been carried out using dielectric barrier discharge (DBD) plasmas at atmospheric pressure. In the NO/N₂ system, NO decomposition to N₂ and O₂ is the dominating reaction; NO conversion to NO₂ is less significant. O₂ produced from NO decomposition was detected by an on-line mass spectrometer. With the increase of NO initial concentration, the concentration of O₂ produced decreases at 298 K, but slightly increases at 523 K. In the NO/O₂/N₂ system, NO is mainly oxidized to NO₂, but NO conversion becomes very low at 523 K and over 1.6% of O₂. In the NO/C₂H₄/N₂ system, NO is reduced to N₂ with about the same NO conversion as that in the NO/N₂ system but without NO₂ formation. In the NO/C₂H₄/O₂/N₂ system, the oxidation of NO to NO₂ is dramatically promoted. At 523 K, with the increase of the energy density, NO conversion increases rapidly first, and then almost stabilizes at 93–91% of NO conversion with 61–55% of NO₂ selectivity in the energy density range of 317–550 J L⁻¹. It finally decreases gradually at high energy density. A negligible amount of N₂O is formed in the above four systems. Of the four systems studied, NO conversion and NO₂ selectivity of the NO/C₂H₄/O₂/N₂ system are the highest, and NO/O₂/C₂H₄/N₂ system has the lowest electrical energy consumption per NO molecule converted.     

Densely packed single-crystal Bi2Fe4O9 nanowires fabricated from a template-induced sol-gel route

Densely packed single-crystal Bi₂Fe₄O₉ nanowires were successfully synthesized by a template-induced citrate-based sol-gel process. The structural properties of the nanowires were characterized using many techniques. The results of scanning electron microscopy (SEM) and transmission electron microscopy (TEM) revealed that Bi₂Fe₄O₉ nanowires possessed a uniform length and diameter, which were controlled by the thickness and the pore diameter of the applied porous anodic aluminum oxide (AAO) template, respectively. The results of X-ray diffraction (XRD) and the selected area electron diffraction (SAED) indicated that Bi₂Fe₄O₉ nanowires had an orthorhombic single-crystal structure. Furthermore, the energy-dispersive X-ray (EDX) spectroscopy demonstrated that the stoichiometric Bi₂Fe₄O₉ was formed. The possible formation mechanism of nanowires was also discussed.     

电解液对全铅单液流电池电极性能的影响

研究Pb(II)和H+离子浓度对全铅单液流电池正、负电极在复合石墨基体上电化学行为的影响.结果表明,PbO2正极和Pb负极的电极过程受电化学和扩散混合控制.Pb(II)氧化沉积成PbO2时出现成核环,铅负极成核过电位小,充放电电压差远小于PbO2正极,电池极化主要来自PbO2正极.增加H+浓度有利于降低PbO2正极和Pb负极的极化,但析氧、析氢副反应和腐蚀加重.增大Pb(II)浓度有利于抑制析氧,但PbO2正极充电电压升高,充放电电压差增大.Pb(II)浓度较低时,充放电过程中PbO2沉积层少许脱落,充电电压进一步降低且更趋平稳.为此,电解液中HBF4浓度以2 mol L-1为宜,Pb(II)浓度应在0.9 mol L-1以上.