化学沉积法制备Ni-P纳米线与纳米管有序阵列

以多孔氧化铝膜为模板, 在室温下的酸性化学镀镍槽中通过化学沉积法生长出纳米线与纳米管有序阵列. 分别用X射线衍射仪(XRD)与透射电子显微镜(TEM)对纳米线、纳米管阵列进行表征. 并通过对纳米线与纳米管的生长方式进行分析比较, 系统地研究了多孔氧化铝模板的前处理对纳米阵列生长的影响. 结果表明, 生成的纳米线与纳米管均为非晶态的镍磷合金. 室温下镍纳米管的生成主要取决于敏化、活化过程, 而当纳米管的厚度达到一定程度后就不再随时间变化.     

自支撑镍纳米线阵列电极的制备及电催化性能

采用低熔点合金和多孔聚碳酸酯模板辅助制备了自支撑镍纳米线阵列电极,并研究了其催化肼电氧化的性能. SEM,XRD和TEM测试结果表明,该电极由镍平板和支撑在其上的镍纳米线阵列构成;镍纳米线的絮状表面增加了电极的比表面积.循环伏安和计时电位测试结果表明,当肼的浓度为24. 6 mmol/L时,该电极的起始氧化电位低至-0. 25 V,氧化电流密度高达163 m A/cm~2;当肼浓度较低时,肼电氧化反应和电极自身的Ni(OH)_2/NiOOH转化反应共存;当肼浓度较高时,仅发生肼电氧化反应;肼的反应分级数约为1,反应活化能为16. 13～21. 24 kJ/mol;镍纳米线阵列电极的一体化、开放式结构使其电催化性能明显优于商业镍片和泡沫镍,并表现出良好的稳定性.     

还原氧化石墨烯表面聚苯胺纳米阵列的制备及电化学电容性能

本文以阳极氧化铝(AAO)膜为模板,通过恒电位法在自组装还原氧化石墨烯(rGO)膜表面制备有序聚苯胺(PANI)纳米线阵列。通过拉曼光谱和场发射扫描电子显微镜分别对其结构和微观形貌进行了表征,并对PANI纳米线阵列的电化学电容性能进行了测试。结果表明,rGO膜表面可电沉积PANI,电沉积得到的PANI纳米线阵列具有比PANI薄膜材料更高的电容和比电容。     

金纳米线阵列制备及其光谱特性

利用电化学沉积方法在重离子径迹模板中制备出直径从45 nm到200 nm, 长径比达700的金纳米线阵列, 利用扫描电子显微镜(SEM)和X射线衍射(XRD)对所制备金纳米线的形貌及晶体结构进行分析, 结果表明, 在1.5 V(无参比电极)沉积电压下所制备出的直径为200 nm金纳米线沿[100]晶向具有较好择优取向. 利用紫外-可见光谱(UV-Vis)对镶嵌在透明模板中平行排列的金纳米线阵列光学特性进行研究, 发现金纳米线直径为45 nm时, 其紫外可见光谱在539 nm处有强烈吸收峰, 随着金纳米线直径增加, 吸收峰红移, 当金纳米线直径达到200 nm时, 其吸收峰峰位移至700 nm. 结合金纳米颗粒相关表面等离子体共振吸收效应对实验结果进行了讨论.     

CdSe电沉积层的组成及形成机理

伏安曲线和现场光电流测定用于研究在钛基体上阴极电沉积形成Cdse薄膜的机理. XPS实验表明, CdSe沉积层的组成与沉积电位、沉积时间和溶液组成有关.在0.1 mol·L~(-1)CdSO_4+4 mmol·L~(-1)H_2SeO_3+0.2 mol·L~(-1) H_2SO_4溶液中, 当电位比-0.50 V正时生成富Se层, 而当电位比-0.70 V还负时生成富Cd层. 在-0.69 V下沉积, 沉积层的Se/Cd计量比接近1.1. 在同一电位下, 若提高H_2Se0_3浓度, 则沉积物中Se的含量增多. 实验结果表明, CdSe电沉积因条件不同遵循两种不同的机理, 据此讨论了克服Se/Cd比大于1的可能措施。     

模板法制备CdSe纳米材料及其光电性能（英文）

采用电化学沉积法,在阳极氧化铝(AAO)模板中成功制备出CdSe纳米管和纳米线。利用扫描电子显微镜(SEM)、透射电子显微镜(TEM)、X射线衍射分析(XRD)和能量色散X射线光谱仪(EDS)对材料的形貌、结构和元素组成进行了表征。借助紫外-可见吸收光谱等对材料光催化活性进行了研究。结果表明:通过控制沉积电量可成功制备CdSe纳米管和纳米线;CdSe纳米材料为立方晶型与六方晶型的混合,经350℃退火处理后,CdSe纳米材料中由立方晶型向六方晶型转变,光照开路电位差值明显增强,在0 V(vs SCE)电位下的光照电流密度也有所提高,光电转换性能增强;CdSe纳米线的吸收边在710 nm左右,禁带宽度约为1.85 eV,CdSe纳米管相对于CdSe纳米线具有更高的光电转换性能和光催化活性,经7 h光照后,罗丹明B降解效率高达53.93%。另外,本文还讨论了CdSe纳米材料在AAO模板孔壁的生长机理。     

SnO_2/石墨纳米片复合电极及其在超级电容器中的应用

在电场的作用下对石墨棒进行电化学剥离,使其表面形成相互平行排列,且垂直于石墨棒基底的二维(2D)石墨纳米片阵列(GNSA).然后通过阴极还原电沉积法制备Sn O2/石墨纳米片阵列(Sn O2/GNSA)复合电极.采用场发射扫描电镜(FE-SEM)、X射线衍射(XRD)和傅里叶变换红外(FT-IR)光谱对其形貌和结构进行了表征.电化学测试表明该复合电极具有优异的超电容性能,在0.5 mol·L-1Li NO3电解质中,扫描速率为5 m V·s-1,电位窗口为1.4 V时,比电容达4015 F·m-2.由Sn O2/GNSA复合电极和相同电解质组装成的对称型超级电容器,在扫描速率为5 m V·s-1时,其电位窗口可增至1.8 V,能量密度达到0.41 Wh·m-2,循环5000圈后其比电容仍保持为初始比电容的81%.     

铂/普鲁士蓝复合纳米线的合成及电化学传感应用

利用多孔聚碳酸酯膜,采用两步模板电沉积法制备了铂/普鲁士蓝(Pt/PB)复合纳米线。将Pt/PB复合纳米线固定在玻碳(GC)电极上,构建过氧化氢电化学传感器。实验结果表明,Pt/PB复合纳米线对过氧化氢的还原有良好的电催化作用。在电位为-0.1V时,响应电流信号与过氧化氢浓度呈良好的线性关系,线性范围为6.1×10-4～1.8×10-2 mol/L,检出限(S/N=3)为5.0×10-7 mol/L。该修饰电极具有响应速率快、稳定性高、使用寿命长等优点,同时还具有一定的抗干扰能力。     

单晶Ni纳米线阵列的制备与磁性能

采用恒电流沉积方法, 在多孔阳极氧化铝(AAO)模板中制备出了具有单晶结构的Ni纳米线阵列. 采用扫描电子显微镜(SEM)、透射电子显微镜(TEM)和X射线衍射(XRD)技术对制备的Ni纳米线阵列的形貌及结构进行了表征. 利用振动样品磁强计(VSM)对单晶Ni纳米线阵列的磁性能进行了研究. 结果表明, 单晶镍纳米线阵列的易磁化方向为纳米线轴向, 并且与多晶纳米线相比显示出了更高的矫顽力. 直径为30 nm的纳米线具有较高的矫顽力(8.236×104 A/m)和较高的剩磁比(Mr＝0.94Ms).     

铂银合金的制备及其对甲醇电氧化反应的催化性能（英文）

采用一种无需使用任何有机表面活性剂或溶剂的方法,在熔融盐体系中制备了铂银纳米合金颗粒,考察了合金中元素银对碱性电解质中甲醇电氧化反应(MOR)的催化作用。透射电子显微镜表征结果显示,当前躯体铂银物质的量比为1时,可以得到组成为Pt_(52)Ag_(48)的合金纳米管。甲醇电氧化反应测试结果表明,具有干净表面的Pt_(52)Ag_(48)纳米管比常规的Pt黑具有更好的催化性能。Pt_(52)Ag_(48)合金纳米管的催化活性与其最大正扫电位密切相关,正扫电位从-1.0到0.5 V(vs.SCE),MOR峰值电流达到1.61 mA/μg_(P_t),是从-1.0到0.1 V(vs.SCE)正扫电位的1.92倍。铂银合金表面层中的Ag元素主要通过在电化学循环中发生氧化还原反应来促进合金的MOR活性。研究结果可以为铂银合金在直接甲醇燃料电池(DMFC)中的应用提供理论支持。     

Novel electrodeposition behavior of Ni on porous anodic alumina templates without a conductive interlayer

During template-assisted electrodeposition, single-crystalline metallic nanowires could be obtained only when the overpotential is low. However, an unusual electrodeposition behavior on the PAA/Si substrate without a conductive interlayer between the template and Si is described in the present study. Through the electrical breakdown of the template, Ni nanodots, nanowires and nanotubes could be obtained by only changing the electrodeposition voltage on the same substrate. The mechanisms leading to the formation of various nanostructures are described in detail and compared with those for the conventional template-assisted electrodeposition process. The electrodeposition first occurred on the pore wall instead of from the underlying substrate, leading to the formation of some Ni nanotubes at a more negative voltage. Besides, single-crystalline Ni nanowires could also be formed even when the electrodeposition voltage was as negative as -40 V, indicating that the formation of single-crystalline metallic nanowires under a large overpotential is possible.     

不同取向的CoSb3纳米线阵列的电化学法制备

近年来,金属纳米线及其阵列由于其新奇的物理和化学特性和在纳米器件方面潜在的应用前景,越来越受到人们的关注。氧化铝模板合成一维纳米材料具有设备简单、制作方便等优点,因而成为近年来人们常用的一种方法。利用电化学沉积的方法在多孔氧化铝模板中沉积各种成分的纳米线已成为纳米材料制备的一种常见的方法。这种方法不仅可以得到大面积有序的纳米线阵列,还可以根据需要调节孔洞的大小来控制纳米线的直径[1￣3]。最近理论研究结果预言[4￣6],由于纳米材料的量子限域效应,热电材料的纳米线将有比其相应块体材料更高的品质因数n,这极大地激…     

Formation and characterization of self-organized TiO2 nanotube arrays by pulse anodization

This paper describes TiO2 nanotube arrays prepared by anodic oxidation of Ti substrates using pulse voltage waveforms. Voltages were pulsed between 20 and -4 V or between 20 and 0 V with varying durations from 2 to 16 s at the lower limit of the pulse waveform. Ammonium fluoride or sodium fluoride (and mixtures of both) was used as the electrolyte with or without added medium modifier (glycerol, ethylene glycol, or poly (ethylene glycol) (PEG 400)) in these experiments. The pulse waveform was optimized to electrochemically grow TiO2 nanotubes and chemically etch their walls during its cathodic current flow regime. The resultant TiO2 nanotube arrays showed a higher quality of nanotube array morphology and photoresponse than samples grown via the conventional continuous anodization method. Films grown with a 20 V/-4 V pulse sequence and pulse duration of 2 s at its negative voltage limit afforded a superior photoresponse compared to other pulse durations. Specifically, the negative voltage limit of the pulse (-4 V) and its duration promote the adsorption of NH4+ species that in turn inhibits chemical attack of the growing oxide nanoarchitecture by the electrolyte F- species. The longer the period of the pulse at the negative voltage limit, the thicker the nanotube walls and the shorter the nanotube length. At variance, with 0 V as the low voltage limit, the longer the pulse duration, the thinner the oxide nanotube wall, suggesting that chemical attack by fluoride ions is not counterbalanced by NH3/NH4+ species adsorption, unlike the interfacial situation prevailing at -4 V. Finally, the results from this study provide useful evidence in support of existing mechanistic models for anodic growth and self-assembly of oxide nanotube arrays on the parent metal surface.     

InSb纳米线阵列的可控制备与光谱表征

采用脉冲电沉积结合阳极氧化铝模板技术制备了不同生长方向的闪锌矿型InSb纳米线阵列. 结果表明, 控制电解液中十二烷基硫酸钠(SDS)的浓度, 可使纳米线的择优生长方向从[400]向[220]方向转变. 利用X射线衍射仪、 场发射扫描电子显微镜、 高分辨透射电子显微镜对所制备纳米线的相组成和微结构进行了表征. 激光拉曼光谱结果表明, 不同生长方向的InSb纳米线阵列的拉曼光谱有明显差异. 与体材料相比, InSb纳米线阵列的红外吸收声子散射峰发生强烈红移, 其吸收带边发生了明显蓝移.     

Size-dependent orientation growth of large-area ordered Ni nanowire arrays

Large-area ordered Ni nanowire arrays with different diameters have been fabricated by the direct current electrodeposition into the holes of porous anodic alumina membrane. The crystal structure and micrograph of nanowire arrays are characterized by X-ray diffraction, field-emission scanning electron microscopy and high-resolution transmission electron microscopy. The results indicate that the growth orientation of Ni nanowires turns from [110] to [111] direction with increasing diameters of nanowires. The mechanism of the growth was discussed in terms of interface energy minimum principle. The size-dependent orientation of Ni nanowire arrays has the important significance for the design and control of nanostructures.     

Fabrication of aligned TiO2 one-dimensional nanostructured arrays using a one-step templating solution approach

In this letter, we report a one-step templating synthetic strategy to prepare aligned TiO2 nanotube and nanowire arrays on Si substrate from a solution at ambient temperature. The deposition of TiO2 and the selective-etching of the ZnO template proceeded at the same time through the careful control of process parameters. The different thickness of TiO2 sheaths, leading to the formation of nanotubes or nanorods, can be precisely controlled by the deposition time. The idea of selective etching and deposition is applicable to other oxide materials, and such a facile method is expected to find widespread applications.     

退火对TiO2纳米管/线复合阵列表面光电性质的影响

采用阳极氧化法制备了TiO2纳米管/线复合阵列. 利用表面光电压谱(SPS)和场诱导表面光电压谱(FISPS)研究了退火对TiO2纳米管/线复合阵列表面光电性质的影响. 结果表明, TiO2纳米管/线复合阵列在晶化前后的导带边缘均出现了束缚激子态, 晶化前由于自建场较弱, 束缚激子态能在正负电场作用下发生不对称偏转; 晶化后, 晶体结构从非晶态变为晶态, 自建场增强, 束缚激子态对正电场敏感并表现出明显的光伏响应, 而在负电场作用下束缚激子态没有任何光伏响应.     

Redox-induced solid-solid phase transformation of TCNQ microcrystals into semiconducting Ni[TCNQ]2(H2O)2 nanowire (flowerlike) architectures: a combined voltammetric, spectroscopic, and microscopic study

The facile solid-solid phase transformation of TCNQ microcrystals into semiconducting and magnetic Ni[TCNQ]2(H2O)2 nanowire (flowerlike) architectures is achieved by reduction of TCNQ-modified electrodes in the presence of Ni2+(aq)-containing electrolytes. Voltammetric probing revealed that the chemically reversible TCNQ/Ni[TCNQ]2(H2O)2 conversion process is essentially independent of electrode material and the identity of nickel counteranion but is significantly dependent on scan rate, Ni2+(aq) electrolyte concentration, and the method of solid TCNQ immobilization (drop casting or mechanical attachment). Data analyzed from cyclic voltammetric and double-potential step chronoamperometric experiments are consistent with formation of the Ni[TCNQ]2(H2O)2 complex via a rate-determining nucleation/growth process that involves incorporation of Ni2+(aq) ions into the reduced TCNQ crystal lattice at the triple phase TCNQ|electrode|electrolyte interface. The reoxidation process, which includes the conversion of solid Ni[TCNQ]2(H2O)2 back to TCNQ0 crystals, is also controlled by nucleation/growth kinetics. The overall redox process associated with this chemically reversible solid-solid transformation, therefore, is described by the equation: TCNQ0(S) + 2e- + Ni2+(aq)+ 2 H2O <==> {Ni[TCNQ]2(H2O)2}(S). SEM monitoring of the changes that accompany the TCNQ/Ni[TCNQ]2(H2O)2 transformation revealed that the morphology and crystal size of electrochemically generated Ni[TCNQ]2(H2O)2 are substantially different from those of parent TCNQ crystals. Importantly, the morphology of Ni[TCNQ]2(H2O)2 can be selectively manipulated to produce either 1-D/2-D nanowires or 3-D flowerlike architectures via careful control over the experimental parameters used to accomplish the solid-solid phase interconversion process.     

Magnetic field assisting DC electrodeposition: general methods for high-performance Ni nanowire array fabrication

One-dimensional magnetic nanowires are generally thought to show fine axial magnetism for their special high aspect ratio of the shape. However, the magnetic nanowire arrays fabricated by DC electrodeposition in template pores always show a low squareness in parallel to the nanowire direction. We developed two general and simple methods to improve the squareness of the as-fabricated Ni nanowire arrays parallel to the nanowire direction. The nanowires are found to be polycrystalline. The magnetism of the nanowire is also analyzed based on the microstructure.