Negative differential resistance and rectification effects in zigzag graphene nanoribbon heterojunctions: Induced by edge oxidation and symmetry concept

By applying non-equilibrium Green's functions (NEGF) in combination with tight-binding (TB) model, we investigate and compare the electronic transport properties of H-terminated zigzag graphene nanoribbon (H/ZGNR) and O-terminated ZGNR/H-terminated ZGNR (O/ZGNR–H/ZGNR) heterostructure under finite bias. Moreover, the effect of width and symmetry on the electronic transport properties of both models is also considered. The results reveal that asymmetric H/ZGNRs have linear I–V characteristics in whole bias range, but symmetric H-ZGNRs show negative differential resistance (NDR) behavior which is inversely proportional to the width of the H/ZGNR. It is also shown that the I–V characteristic of O/ZGNR–H/ZGNR heterostructure shows a rectification effect, whether the geometrical structure is symmetric or asymmetric. The fewer the number of zigzag chains, the bigger the rectification ratio. It should be mentioned that, the rectification ratios of symmetric heterostructures are much bigger than asymmetric one. Transmission spectrum, density of states (DOS), molecular projected self-consistent Hamiltonian (MPSH) and molecular eigenstates are analyzed subsequently to understand the electronic transport properties of these ZGNR devices. Our findings could be used in developing nanoscale rectifiers and NDR devices.     

基于石墨烯电极的Co-Salophene分子器件的自旋输运

采用基于非平衡格林函数结合第一性原理的密度泛函理论的计算方法,研究了基于锯齿型石墨纳米带电极的Co-Salophene分子器件的自旋极化输运性质.计算结果表明,当左右电极为平行自旋结构时,自旋向上的电流明显大于自旋向下的电流,自旋向下的电流在[-1V,1V]偏压下接近零,分子器件表现出优异的自旋过滤效应.与此同时,在自旋向上电流中发现负微分电阻效应.当左右电极为反平行自旋结构时,器件表现出双自旋过滤和双自旋分子整流效应.除此之外,整个分子器件还表现出较高的巨磁阻效应.通过分析器件的自旋极化透射谱、局域态密度、电极的能带结构和分子自洽投影哈密顿量,详细解释该分子器件表现出众多特性的内在机理.研究结果对设计多功能分子器件具有重要的借鉴意义.     

Electronic transport of graphene nanoribbons within recursive Green’s function

In this work, we introduce a recursive Green’s function method for investigating electronic transport in a graphene nanoribbons (GNRs) quantum wire with armchair (AGNR) and zigzag (ZGNR) edges which attached to two semi-infinite square lattice leads. This model reduces numerical calculations time and enables us to use Green’s function method to investigate transport in a supperlattice device. Therefore, we consider AGNR and ZGNR devices attached to metallic semi-infinite square lattice leads, taking into account the effects of longitudinal and wide of the wire. Our calculations are based on the tight-binding model, which the recursive Green’s function method is used to solve inhomogeneous differential equations. We concentrate on the electrical conductance and current for various length and wide size of the wire. Our numerical results show that the transport properties are strongly affected by the quantum interference effect and the lead interface geometry to the device. By controlling the type of contact and wire geometry, this kind of system can explain the antiresonance states at the Fermi energy. Our results can serve as a base for developments in designing nano-electronic devices.     

The spin-dependent electronic transport properties of M(dcdmp)2 (M = Cu,Au, Co,Ni) molecular devices based on zigzag graphene nanoribbon electrodes

The spin-dependent electronic transport properties of M(dcdmp)₂ (M = Cu, Au, Co, Ni; dcdmp = 2,3-dicyano-5,6-dimercaptopyrazyne) molecular devices based on zigzag graphene nanoribbon (ZGNR) electrodes were investigated by density functional theory combined nonequilibrium Green's function method (DFT-NEGF). Our results show that the spin-dependent transport properties of the M(dcdmp)₂ molecular devices can be controlled by the spin configurations of the ZGNR electrodes, and the central 3d-transition metal atom can introduce a larger magnetism than that of the nonferrous metal one. Moreover, the perfect spin filtering effect, negative differential resistance, rectifying effect and magnetic resistance phenomena can be observed in our proposed M(dcdmp)₂ molecular devices.     

Sulfur dioxide molecule sensors based on zigzag graphene nanoribbons with and without Cr dopant

Structure, electronic, and transport properties of sulfur dioxide (SO₂) molecule adsorbed on pure and Cr doped zigzag graphene nanoribbons (ZGNRs) are investigated by means of first principle density functional theory and nonequilibrium Greenʼs function computations. It is found that Cr doped ZGNR is more sensitive to SO₂ molecule than pure ZGNR. The pure ZGNRs with and without SO₂ molecule show similar I–V curves, but the current of Cr doped ZGNR will significant increase after SO₂ molecule adsorption.     

Ab initio study of gold-doped zigzag graphene nanoribbons

The electronic transport properties of zigzag graphene nanoribbons (ZGNRs) through covalent functionalization of gold (Au) atoms is investigated by using non-equilibrium Green’s function combined with density functional theory. It is revealed that the electronic properties of Au-doped ZGNRs vary significantly due to spin and its non-inclusion. We find that the DOS profiles of Au-adsorbed ZGNR due to spin reveal very less number of states available for conduction, whereas non-inclusion of spin results in higher DOS across the Fermi level. Edge Au-doped ribbons exhibit stable structure and are energetically more favorable than the center Au-doped ZGNRs. Though the chemical interaction at the ZGNR–Au interface modifies the Fermi level, Au-adsorbed ZGNR reveals semimetallic properties. A prominent qualitative change of the I–V curve from linear to nonlinear is observed as the Au atom shifts from center toward the edges of the ribbon. Number of peaks present near the Fermi level ensures conductance channels available for charge transport in case of Au-center-substituted ZGNR. We predict semimetallic nature of the Au-adsorbed ZGNR with a high DOS peak distributed over a narrow energy region at the Fermi level and fewer conductance channels. Our calculations for the magnetic properties predict that Au functionalization leads to semiconducting nature with different band gaps for spin up and spin down. The outcomes are compared with the experimental and theoretical results available for other materials.     

Switching behavior induced by different substituents of group in single molecular device

We investigate the electronic transport properties of photochromic azobenzene-based molecular devices with Au electrodes using non-equilibrium Green’s function and density functional theory. A reversible switching behavior between cis and trans isomerization is found in the device. In addition, the substituent of ?NH₂ on the right end hydrogen atom of azobenzene molecule reduces the switching ratio of current, consequently the disappearance of switching behavior, while the substituent of ?NO₂ improves the switching ratio of current. We discuss the different electronic transport induced by different substituents through the transmission spectra, localized density of states, molecular projected self-consistent Hamiltonian and transmission pathways. The observed polarization effect under bias is explained by the evolution of molecular projected self-consistent Hamiltonian of LUMO level. The results indicate that the electron-withdrawing group ?NO₂ substituting right terminal hydrogen of azobenzene molecule becomes a candidate for improving the performance of molecular device.     

Rectifying performance in zigzag graphene nanoribbon heterojunctions with different edge hydrogenations

Using nonequilibrium Green?s functions in combination with the density functional theory, we investigated the electronic transport behaviors of zigzag graphene nanoribbon (ZGNR) heterojunctions with different edge hydrogenations. The results show that electronic transport properties of ZGNR heterojunctions can be modulated by hydrogenations, and prominent rectification effects can be observed. We propose that the edge dihydrogenation leads to a blocking of electronic transfer, as well as the changes of the distribution of the frontier orbital at negative/positive bias might be responsible for the rectification effects. These results may be helpful for designing practical devices based on graphene nanoribbons.     

Effect of N doping and Stone-Wales defects on the electronic properties of graphene nanoribbons

The effects of nitrogen substitutional doping in the Stone-Wales (SW) defect on the electronic transport properties of zigzag-edged graphene nanoribbon (ZGNR) are studied by using density functional theory combined with nonequilibrium Green’s function. The transformation energies of all doped nanostructures are evaluated in terms of total energies and, furthermore, it is found that the impurity placed on the center of the ribbon is the most energetically favorable site. Nitrogen substitution gives rise to a complete electron backscattering region in doped configurations, and the location of which is dependent on the doping sites. The electronic and transport properties of doped ZGNRs are discussed. Our results suggest that modification of the electronic properties of ZGNR with topological defects by substitutional doping might not be significant for some doping sites.     

Device design based on the covalent homocoupling of porphine molecules

Porphine has a great potential application in molecular electronic devices. In this work, based on the density functional theory(DFT) and combining with nonequilibrium Green's function(NEGF), we study the transport properties of the molecular devices constructed by the covalent homocoupling of porphine molecules conjunction with zigzag graphene nanoribbons electrodes. We find that different couple phases bring remarkable differences in the transport properties. Different coupling phases have different application prospects. We analyze and discuss the differences in transport properties through the molecular energy spectrum, electrostatic difference potential, local density of states(LDOS), and transmission pathway. The results are of great significance for the design of porphine molecular devices in the future.     

Controllable tuning of the electronic transport in pre-designed graphene nanoribbon

We make use of ab initio density functional theory calculation to explore the electronic and transport properties of zigzag-edged graphene nanoribbon (ZGNR) with peculiar designed electronic transport channels by tailoring the atomic configuration of the nanostructure. Tailoring the atomic structure has significant influences on the electronic transport of the defective nanostructure, and eventually the metal-semiconducting transition are identified with the increasing number of missing atoms. Our results demonstrate that pre-designed graphene nanoribbon by selective tailoring with high precision is expected to be served as the basic component for nanoelectronic device.     

嵌入线型缺陷的石墨纳米带的热输运性质

采用非平衡格林函数方法研究了嵌入有限长、半无限长、 无限长线型缺陷的锯齿型石墨纳米带 (ZGNR)的热输运性质.结果表明, 缺陷类型和缺陷长度对ZGNR的热导有重要影响. 当嵌入的线型缺陷长度相同时, 包含t5t7线型缺陷的石墨纳米带比包含Stone-Wales线型缺陷的条带热导低. 对于嵌入有限长、同种缺陷的ZGNR, 其热导随线型缺陷的长度增加而降低, 但是当线型缺陷很长时, 其热导对缺陷长度的变化不再敏感.通过比较嵌入有限长、半无限长、无限长线型缺陷的ZGNR, 我们发现嵌入无限长缺陷的条带比嵌入半无限长缺陷的条带热导高, 而后者比嵌入有限长线型缺陷的条带热导高. 这主要是因为在这几种结构中声子传输方向的散射界面数不同所导致的. 散射界面越多, 对应的热导就越低. 通过分析透射曲线和声子局域态密度图, 解释了这些热输运现象. 这些研究结果表明线型缺陷能够有效地调控石墨纳米带的热输运性质. 关键词： 石墨烯 线型缺陷 热导     

硼或氮掺杂的锯齿型石墨烯纳米带的非共线磁序与电子输运性质

基于非共线磁序密度泛函/非平衡格林函数方法,研究了硼或氮掺杂的锯齿型石墨烯纳米带的非共线磁序与电子透射系数.未掺杂的石墨烯纳米带的计算结果表明磁化分布主要遵循类似于Neel磁畴壁的螺旋式磁化分布.相比于未掺杂的情况,硼/氮掺杂的石墨烯纳米带的磁化分布出现了双区域的特征,即杂质原子附近的磁化较小,杂质原子左(右)侧区域的磁化分布更接近于左(右)电极的磁化方向,这为通过掺杂手段在石墨烯纳米带边缘上构建不同磁畴壁提供了可能性.与未掺杂的透射系数不同的是,硼/氮掺杂的石墨烯纳米带的透射系数在费米面附近随着磁化偏转角增大而减小,表明非共线磁序引起的自旋翻转散射占据主导地位.而在E=±0.65 eV处,出现了一个较宽的dip结构,投影电子态密度的分析表明其来源于杂质原子形成的束缚态所引起的背散射.我们的研究结果对于理解石墨烯纳米带中的非共线磁序与杂质散射以及器件设计具有一定的意义.     

BN链掺杂的石墨烯纳米带的电学及磁学特性

基于密度泛函理论第一性原理系统研究了BN链掺杂石墨烯纳米带(GNRs)的电学及磁学特性, 对锯齿型石墨烯纳米带(ZGNRs)分非磁态(NM)、反铁磁态(AFM)及铁磁性(FM)三种情况分别进行考虑. 重点研究了单个BN链掺杂的位置效应. 计算发现: BN链掺杂扶手椅型石墨烯纳米带(AGNRs) 能使带隙增加, 不同位置的掺杂, 能使其成为带隙丰富的半导体. BN链掺杂非磁态ZGNR的不同位置, 其金属性均降低, 并能出现准金属的情况; BN链掺杂反铁磁态ZGNR, 能使其从半导体变为金属或半金属(half-metal), 这取决于掺杂的位置; BN链掺杂铁磁态ZGNR, 其金属性保持不变, 与掺杂位置无关. 这些结果表明: BN链掺杂能有效调控石墨烯纳米带的电子结构, 并形成丰富的电学及磁学特性, 这对于发展各种类型的石墨烯基纳米电子器件有重要意义. 关键词： 石墨烯纳米带 BN链掺杂 输运性质 自旋极化     

Low and moderate dose gamma-irradiation and annealing impact on electronic and electrical properties of AlGaN/GaN high electron mobility transistors

To understand the effects of ⁶⁰Co gamma-irradiation, systematic studies were carried out on n-channel AlGaN/GaN high electron mobility transistors. Electrical testing, combined with electron beam-induced current measurements, was able to provide critical information on defects induced in the material as a result of gamma-irradiation. It was shown that at low gamma-irradiation doses, the minority carrier diffusion length in AlGaN/GaN exhibits an increase up to ～300?Gy. The observed effect is due to longer minority carrier (hole) life time in the material's valence band as a result of an internal electron irradiation by Compton electrons. However, for larger doses of gamma irradiation (above 400?Gy), deteriorations in transport properties and device characteristics were observed. This is consistent with the higher density of deep traps in the material's forbidden gap induced by a larger dose of gamma-irradiation. Moderate annealing of device structures at 200°C for 25?min resulted in partial recovery of transport properties and device performance.     

Effect of polarization roughness scattering (PRS) on two-dimensional electron transport of MgZnO/ZnO heterostructures

Quantum transport properties of two-dimensional electron gas (2DEG) in undoped MgZnO/ZnO heterostructures with polarization charge effect have been investigated theoretically. Polarization roughness scattering (PRS) combining polarization charge and interface roughness scattering was proposed as a new scattering mechanism. It was found that the carriers confined in the heterostructures (HSs) would be scattered from polarization charges when they were moving along the in-plane and PRS played a very important role for the low-temperature electron mobility when the electron density N_s exceeded 1.0e11 cm⁻², especially in a higher electron density region. With PRS, the experimental data on the density dependence of 2DEG mobility in the MgZnO/ZnO HSs under study can be well reproduced. The study indicates that the improved processing techniques providing a smooth interface and a good separation between the 2DEG electrons and the polarization charges should be significant for the quantum device’s performance.     

新型噁二唑有机电致发光小分子光电性质研究

通过升降温差热分析(DSC)曲线、偏光显微镜、紫外吸收光谱、电化学行为曲线以及多层器件等,研究了噁二唑衍生物小分子的电学和光学性质,发现其同时具有液晶性、电子和空穴传输性、发光性等优良性能.引进R-OXD(En)层后的多层器件在低于3 V时就能得到可见光发射,在7 V时可以得到光亮度为1000 cdm^-2.此系列小分子可降低有机电致发光器件开启电压,提高发光亮度和发光效率,是一种非常具有吸引力的有机电致发光小分子.     

Atomic and electronic structures of divacancy in graphene nanoribbons

First principles calculations have been performed to investigate the electronic structures and transport properties of defective graphene nanoribbons (GNRs) in the presence of pentagon-octagon-pentagon (5-8-5) defects. Electronic band structure results reveal that 5-8-5 defects in the defective zigzag graphene nanoribbon (ZGNR) is unfavorable for electronic transport. However, such defects in the defective armchair graphene nanoribbon (AGNR) give rise to smaller band gap than that in the pristine AGNR, and eventually results in semiconductor to metal-like transition. The distinct roles of 5-8-5 defects in two kinds of edged-GNR are attributed to the different coupling between π^? and π subbands influenced by the defects. Our findings indicate the possibility of a new route to improve the electronic transport properties of graphene nanoribbons via tailoring the atomic structures by ion irradiation.     

Tailoring atomic structure to control the electronic transport in zigzag graphene nanoribbon

We have performed ab initio   density functional theory calculation to study the electronic transport properties of the tailored zigzag-edged graphene nanoribbon (ZGNR) with particular electronic transport channels. Our results demonstrated that tailoring the atomic structure had significantly influenced the electronic transport of the defective nanostructures, and could lead to the metal-semiconducting transition when sufficient atoms are tailored. The asymmetric I–V$I\text{–}V$ characteristics as a result of symmetry breaking have been exhibited, which indicates the route to utilize GNR as a basic component for novel nanoelectronics.     

Electronic and transport properties of monolayer graphene defected by one and two carbon ad-dimers

Using density functional theory combined with non-equilibrium Green’s function method, we have investigated the electronic and transport properties of graphenes defected by one and two carbon ad-dimers (CADs), placed parallel to the graphene lattice. Addition of these CADs to graphenes creates 3D paired pentagon–heptagon defects (3D-PPHDs). The band structure, density of states (DOS), quantum conductance, projected DOS, as well as the current–voltage characteristic per graphene super-cells containing each type of 3D-PPHD are calculated. The local strain introduced to graphene by 3D-PPHDs forces the C-bonds in the dimers to hybridize in sp ³-like rather than sp ²-like orbitals, creating localized states at the center of the corresponding defect below the Fermi energy. Simulations show that the zero-bias conductances per super-cells containing defects created by one and two CADs exhibit dip about ~0.579 and ~0.253 eV below their corresponding Fermi levels, respectively. These can be attributed to the localized states around the same energy levels. Simulations also show that the enhanced carriers scatterings within the graphenes defected by the 3D-PPHDs have increased their overall resistances, as compared with the pristine graphene. Moreover, the current–voltage characteristic calculated per super-cell for each case shows that the current for those containing one and two CADs, at an applied voltage of 0.5 V, is ~5 and 13 % less than the current calculated for the pristine super-cell of the same size.