类铍钛离子和类铍钼离子双电子复合系数研究

研究了类铍钛离子和类铍钼离子的三类双电子复合过程,基于多组态准相对论ＨａｒｔｒｅｅＦｏｃｋ方法和扭曲波方法,计算了这些离子在电子温度０．０１～２．０ｋｅＶ范围内的双电子复合系数,并讨论了它们随电子温度、复合类型及原子序数的变化。     

Ti^3＋离子浓度对掺钛蓝宝石激光器输出特性的影响

首次从理论上研究了掺钛蓝宝石晶体中Ｔｉ＾３＋离子浓度对脉冲式激光泵浦的掺钛蓝宝石激光器的输出特性的影响，并用五种不同Ｔｉ＾３＋离子浓度的掺钛蓝宝石晶体进行了实验研究，实验结果与理论符合得较好。     

类锂钛离子电子碰撞激发截面和速率系数

在Ｚ标度类氢模型下，用Ｃｏｕｌｏｍｂ－Ｂｏｒｎ交换近似计算了‘水窗’波段类锂钛离子精细结构能级的电子碰撞激发截面和速率系数。为了更好地考虑碰撞过程中电子的关联效应和相对论效应，在计算过程中对有效核电荷的计算作了修改。     

HIREFS谱仪在在类氖钛软X射线激光中的应用

介绍了掠入射高焦场ＨＩＲＥＦＳ谱仪的主要结构和性能，采用预脉冲实验技术，使用该谱仪对线聚焦条件下钛靶的轴向空间分辨谱进行了研究，得到了类氖钛３２．６ｎｍ软Ｘ射线激光强线的空间分布信息。     

HIREFS谱仪在类氖钛软X射线激光中的应用

 介绍了掠入射高分辨平焦场HIREFS（High Resolution Erect Field Spectrometer）谱仪的主要结构和性能。采用预脉冲实验技术，使用该谱仪对线聚焦条件下钛靶的轴向空间分辨谱进行了研究，得到了类氖钛32.6nm软X射线激光强线的空间分布信息。     

圆筒电极对离子磁电加热的影响

高效的磁电加热不仅能够提高电子回旋共振(ECR)等离子体的离子温度,还能改善离子的径向和轴向分布,促进ECR等离子体在化学气相沉积金刚石膜刻蚀中的应用.将磁电加热系统中的圆环电极改进为圆筒电极,研究了圆筒电极对离子磁电加热的影响,对比了圆筒和圆环电极加热离子的区别.结果表明:在同一阳极偏压下,圆筒比圆环电极更有利于提高离子温度,圆筒电极加热时各径向位置的离子温度升高的幅度较大,其中圆筒电极内部的离子温度径向分布差异较大,而圆筒下游的离子温度径向分布比较均匀;磁电加热对离子密度的影响很小;采用圆筒电极加热时,有利于离子向轴向下游的输运,改善了离子的轴向均匀性.     

含氘电极真空弧等离子体空间分布特性诊断研究

真空弧放电等离子体含有多种离子成分,并且各离子在空间上具有不同的分布规律.本文针对金属氘化物电极真空弧离子源,搭建了一台紧凑型磁分析装置,用来研究放电等离子体中氘离子与金属离子的空间分布.当离子源弧流为100 A左右时,该装置能有效地传输引出束流,并且具有较好的二次电子抑制效果,可准确获得各离子流强.利用该装置测量并获得了氘化钛含氘电极真空弧放电等离子体内氘离子和钛离子空间分布规律,结果表明:径向上,氘离子和钛离子都呈高斯分布,但氘离子分布均匀,而钛离子相对集中在轴线附近,导致轴线附近氘离子比例最低;轴向上,所有离子数量都以自然指数函数减少,而且相对幅度接近,所以氘离子比例几乎不变.本文研究结果不仅有助于理解真空弧放电等离子体膨胀过程,还可以指导金属氘化物电极真空弧离子源及其引出设计.     

关于激光显微光谱基体效应的探讨

研究了钛的原子线、一次离子线、二次离子线及铁的原子线、一次郭子线在基体SiO_2、SiO_2与碳粉的三种混合物(9:1,7:3,1:1)、CaCO_3、BaCO_3、Na_2CO_3、KNO_3、Al_2O_3、ZnO、Li_2B_4O_7中的强度变化,结果表明钛的原子线与一次离子线的强度比、铁的原子线与一次离子线的强度比基本不变,而钛的二次离子线的强度变化较大。     

钙钛矿/银电极界面降解和离子迁移的原位研究（英文）

本文对CH_3NH_3PbI_3钙钛矿层与Ag电极之间的界面降解和离子迁移过程进行了全面地研究.利用原位光电子能谱检测于段,发现了Ag电极会诱导钙钛矿层的降解,导致PbI_2和AgI物种的形成以及Pb~(2+)离子在界面处还原成金属Pb物种.I 3d谱峰强度的反常增强为碘离子从CH_3NH_3PbI_3下表面迁移到Ag电极提供了直接的实验证据.此外,Ag电极和钙钛矿层接触会在CH_3NH_3PbI_3/Ag界面处诱导0.3 eV的界面偶极,这可能进一步促进碘离子扩散迁移,导致钙钛矿层的分解和Ag电极的侵蚀.     

掺钛宝石可调谐激光器及其进展

１９８２年掺钛宝石（Ｔｉ３＋Ａｌ２Ｏ３）晶体第一次产生可调谐激光，该晶体性能优异，晶体的物理和化学性质与红宝石相似．Ｔｉ３＋离子能级结构有利于产生具有宽吸收和宽荧光谱的激光．晶体生长的关键是提高掺钛浓度和克服钛离子变价．美国、苏联、中国已生长出这种激光晶体．掺钦宝石可调谐激光器可调范围为 ６７０－１０００ｎｍ，光泵连续输出已达１．６ｗ，脉冲输出为１００ ｍＪ，总效率为４０％，灯泵阈值为２０Ｊ，输出为３００ｍＪ． 预期效率可望达５％．将其倍频，可实现单一系统全可见区可调谐．中国科学院安激光学精密机械研究所已实现６７７－９８７ｎｍ可调谐激光．     

Study of n=2,Δn=0 transition of Be-, B-, C-, N- and O-like sequence in the beam--foil spectrum of titanium

The foil-excited the spectrum of highly stripped titanium ions between 12-40 nm has been studied. Titanium ions of 80 and 120 MeV were provided by the HI-13 tandem accelerator at the China Institute of Atomic Energy. GIM-957 XUV-VUV monochromator was refocused to get highly-resolved spectra. Our experimental results and the published spectral data of laser-produced plasma show agreement in nearly all cases within ±0.03 nm. The spectra contained some weak or strong lines previously unclassified. These spectral lines mainly belong to 2s2p^2 for TiXVⅢ, 2p^3 for TiXVIII, 2s2p^3 for TiXVII, 2p^6 4p for Ti XII and 2p^6 3d for Ti XII transitions.     

用于材料表面改性的多功能等离子体浸没离子注入装置

详细叙述了新近研制的多功能等离子体浸没离子注入（ＰⅢ）装置，在装置设计中，考虑了等离子体产生手段、高压脉冲电源和真空抽气系统多项功能要求，把离子注入、涂敷和溅射沉积结合起来，该已实现了多种气体等离子体注入、气－固离子混合与注入、金属等离子体沉积与注入、离子束混合与离子束增强沉积等，以满足不同材料制成的不同零件对多种表面处理工艺的需要，初步应用结果证明，该装置对于改进４５号钢、Ｔｉ－６Ａｌ０－４Ｖ和     

氮离子注入对类球状微米金刚石聚晶膜的影响

利用微波等离子体化学气相沉积法,在覆盖金属钛层的陶瓷衬底上制备出类球状微米金刚石聚晶膜,后对膜的表面进行氮离子的注入.通过扫描电子显微镜、拉曼光谱、X射线衍射谱及二级结构场发射测试,对膜进行了注入前后的分析.氮离子注入后场致电子发射的效果变强,这可能是氮离子的注入增加了类球状微米金刚石聚晶膜表面的缺陷度,从而增加了价带和导带间的缺陷能级,使电子更容易跃迁到高能级上,提高了场致电子的发射效果.     

含氢电极脉冲放电等离子体特性诊断

利用飞行时间质谱法诊断了含氢电极脉冲真空弧离子源放电等离子体成分、离子电荷状态及离子扩散速度等特性.实验结果表明,含氢电极脉冲真空弧离子源放电等离子体的离子成分主要由H+,Ti+,Ti2+和Ti3+组成,其中Ti2+占主要部分.当放电电流为40～80 A时,Ti离子的平均电荷数在1.95～2.13之间,随着放电电流的增...     

多弧离子镀工艺对TiN/Ti与Cr/Cu界面及微结构的影响

用多弧离子镀技术在铜基上电镀Cr/Ni层进行不同工艺条件下多弧离子沉积TiN/Ti实验.借助X射线衍射(XRD)和扫描电子显微镜(SEM)研究了TiN/Ti与Cr/Cu接触界面形成、微结构及其组分与形貌.XRD分析显示,薄膜表面组分包含TiN,Ti₂N多晶相外,还包含一些Cr-Ti的金属间化合物等.显然,TiN,Ti₂N在表面上已形成.SEM观察指出,在90℃制备的表面膜具有不平整的类枝状结晶结构.随着温度升高至170℃,得到精细TiN/Ti覆盖层表面,XRD峰 关键词： 多弧离子镀 氮化钛 界面形成 微结构     

用掩蔽注入法研究钛注入H13钢的耐磨性

采用由金属蒸汽真空弧离子源引出的强束流钛、碳离子对H13钢进行表面改性研究.钛和碳离子注入剂量分别为3×1017和1×1017cm-2,引出电压分别为48和30kV，平均束流密度分别为47和20μA·cm-2.为了保持相同的摩擦磨损实验条件，注 入过程中采用掩蔽注入技术.摩擦磨损实验结果表明，钛离子注入H13钢提高了其耐磨性，并大幅度降低其摩擦系数.利用卢瑟福背散射谱测量了离子注入表面的成分，并采用逐层递推 法得出了钛在H13钢中的浓度深度分布，借助掠面x射线衍射考察了注入表面的相结构. 关键词： 钛离子注入 金属蒸汽真空弧 卢瑟福背散射 掠面x射线衍射     

Titanium plasma spectroscopy studies under double pulse laser excitation

Laser-induced breakdown spectroscopy (LIBS) was applied for parametric studies of titanium (Ti) plasma using single and double pulsed laser excitation scheme. Here a pulsed Nd:YAG laser was employed for generation of laser produced plasma from solid Ti target at ambient pressure. Several ionized titanium lines were recorded in the 312–334 nm UV region. The temporal evolution of plasma parameters such as excitation temperature and electron number density was evaluated. The effect of incident laser irradiance, position of the laser beam focal point with respect to the surface of illumination, single and double laser pulse effect on plasma parameters were also investigated. This study contributes to a better understanding of the LIBS plasma dynamics of the double laser pulse effect on the temporal evolution of various Ti emission lines, the detection sensitivity and the optimal dynamics of plasma for ionized states of Ti. The results demonstrate a faster decay of the continuum and spectral lines and a shorter plasma life time for the double pulse excitation scheme as compared with single laser pulse excitation. For double pulse excitation technique, the emissions of Ti lines intensities are enhanced by a factor of five which could help in the improvement of analytical performance of LIBS technique. In addition, this study proved that to avoid inhomogeneous effects in the laser produced plasma under high laser intensities, short delay times between the incident laser pulse and ICCD gate are required.     

In situ identification of organic components of ink used in books from the 1900s by atmospheric pressure matrix assisted laser desorption ionization mass spectrometry

Transport of N, O, and Ti during dc magnetron sputtering deposition of nanoscopic TiN/Ti and TiN structures on plasma nitrided M2 tool steel, as well as transport of metallic species composing the plasma nitrided steel substrates were investigated. N and O depth distributions were determined with subnanometric resolution using narrow resonant nuclear reaction profiling, whereas Ti was profiled, also with subnanometric depth resolution, by medium energy ion scattering. The surface elementary compositions of the TiN/Ti/nitrided steel and TiN/nitrided steel structures were determined by low energy ion scattering. The chemical compounds formed during deposition were accessed by X-ray photoelectron spectroscopy, indicating the presence of TiN, TiO₂, Ti oxynitrides, as well as other metallic nitrides and oxynitrides, but no metallic Ti was observed. Owing to the observed intensive atom mobility, the compositions of the deposited films on plasma nitrided steel structures varied continuously on a nanoscopic scale, from the core of the steel substrate to the bulk of the stoichiometric TiN films. The Ti interlayer assists interdiffusion of all species, in contrast to the TiN film layer, which is known to be a diffusion barrier. The improved adhesion of TiN hard coatings to plasma nitrided steel under working conditions is discussed in terms of the gradual compositional change around the interfaces and the atomic mobility during their formation.     

Ti4+掺杂硼硅酸盐微晶玻璃的光谱特性

制备了Ti4+掺杂硼硅酸盐玻璃,根据玻璃样品的差热分析(DTA)进行微晶化处理,测试了Ti4+掺杂硼硅酸盐微晶玻璃的X射线衍射(XRD)谱、透射电镜(TEM)图像、吸收光谱和发射光谱.根据Scherrer公式计算了BaYF5微晶的平均晶粒尺寸并与TEM图像进行比对.在紫外光激发下,观察到Ti4+掺杂BaYF5硼硅酸盐微...     

Study of Ti addition in channel layers for In-Zn-O thin film transistors

Ti added In-Zn-O thin films and their application to thin film transistors were studied. The In-Zn-O films were deposited by pulsed plasma deposition using targets with various Ti contents added. High content of Ti in In-Zn-O films was found to induce a decrease in carrier concentration. The effect was attributed to suppression of oxygen vacancies by Ti incorporation. For thin film transistors with Ti added In-Zn-O as channel layer materials, threshold voltage showed positive shift as Ti content increases and field effect mobility was not decreased at the same time. Results of a bias stress experiment on device fabricated at room temperature are also given.