Mechanisms of photo double ionization of helium by 530 eV photons

We have measured fully differential cross sections for photo double ionization of helium 450 eV above the threshold. We have found an extremely asymmetric energy sharing between the photoelectrons and an angular asymmetry parameter beta approximately 2 and beta approximately 0 for the fast and slow electrons, respectively. The electron angular distributions show a dominance of the shakeoff for 2 eV electrons and clear evidence of an inelastic electron-electron scattering at an electron energy of 30 eV. The data are in excellent agreement with convergent close-coupling calculations.     

ASYMMETRY PARAMETERS AND DIFFERENTIAL CROSSSECTIONS FOR PHOTOIONIZATION-EXCITATION OF HELIUM

Asymmetry parameterβ2 for photoionization of helium leaving the He+ ion in the n = 2 level and differential cross sections(DCSs) in the n = 2, 3, 4 levels with photon emission angle θ=90°are provided at photon energies 69－76.8 eV employing the R-matrix method with a 20-term target representation, in which five polarization orbitals 6l are included. The asymmetry parameter β2 and the DCS, in the n=2 level in the region of 69－73eV, are in good agreement with available experimental and theoretical results. Above the n = 3 threshold, we present new theoretical results along with measurements. No theoretical and experimental results can be used to compare with the present calculations of the DCSs for photoionization into the He+ ion in the n = 3, 4 levels.     

Resonance structure for 4s subshell in photoionization of Mn

It is shown that the 3d5(4X)4s(5X) of 4s satellites, except to the coupling between 3d54s(7,5S) and 3p→3d transition, plays a key role on the magnitude of photoionization of 4s cross section. The coupled equation method is improved to calculate this resonance by including these channels. The results of calculations are comp ared with the experimental data from 46 eV to 56 eV photon energies, which are in good agreement with the experiment.     

Resonances in the cesium atom yield in electron-stimulated desorption from tungsten coated with a germanium monolayer

The yield and energy distributions of Cs atoms emerging from cesium layers, which are adsorbed on tungsten coated with a thin germanium film (1-to 2-monolayers thick), have been measured as a function of the incident electron energy, the amount of adsorbed cesium, and the substrate temperature. The measurements were performed by the time-of-flight technique with a surface ionization detector. At low cesium coverages (Θ < 0.1), the Cs atom appearance threshold at a substrate temperature T = 160 K is ～24 eV, which correlates with the Cs 5s-level ionization energy. As the electron energy is increased, the yield passes through a broad plateau and reaches saturation. The signal intensity in the plateau region decreases gradually with increasing cesium coverage and tends to zero for Θ > 0.14. For Θ ≥ 0.15, the cesium atom appearance threshold shifts to ～30 eV, which corresponds to the Ge 3d-level ionization energy and the plateau is replaced by a resonance peak at ～38 eV, which can be identified with the ionization energy of the W 5p _3/2 level. This peak is observed only for Θ < 0.3 and T = 160 K. For Θ ≥ 0.3, there appears a resonance peak at ～50 eV, and for Θ ≥ 0.5, another resonance peak appears at ～80 eV. These peak positions correlate with the ionization energies of the W 5p _1/2 and W 5s levels, and their intensity is maximum at Θ = 1. The Cs atom energy distributions for Θ < 0.15 consist of a bell-shaped peak with a maximum at ～0.55 eV, and those for Θ ≥ 0.15 contain two nearly resolved maxima, a broad one peaking at ～0.5 eV and a narrow one at ～0.35 eV. The above results argue for the existence of three channels of Cs atom desorption. One channel involves reverse motion of the Cs²⁺ ion; another channel, neutralization of the adsorbed Cs⁺ ion following the Auger decay of a vacancy in the Ge atom; and the third channel involves desorption of a CsGe molecule as it is repelled from a W core exciton.     

Boundary conditions for the Pauli equation: application to photodetachment of Cs-

We formulate the boundary conditions near the atomic nucleus for solving the Pauli equation, based on the analytic solution of the Dirac equation for a Coulomb potential. We then integrate the Pauli equation using an effective potential that is adjusted to reproduce Dirac R-matrix scattering phase shifts, and find the (3)P(o)(1) resonance contribution to the photodetachment cross section of Cs-. Our photodetachment cross sections agree with recent experiments by Scheer et al. [Phys. Rev. Lett. 80, 684 (1998)] after tuning the resonance position by 2.4 meV. We also provide angle-differential photodetachment cross sections and the corresponding asymmetry parameter beta near the Cs(6s) threshold.     

Experimental investigation of ultracold atom-molecule collisions

Ultracold collisions between Cs atoms and Cs2 dimers in the electronic ground state are observed in an optically trapped gas of atoms and molecules. The Cs2 molecules are formed in the triplet ground state by cw photoassociation through the outer well of the 0-(g) (P3/2) excited electronic state. Inelastic atom-molecule collisions converting internal excitation into kinetic energy lead to a loss of Cs2 molecules from the dipole trap. Rate coefficients are determined for collisions involving Cs atoms in either the F=3 or F=4 hyperfine ground state, and Cs2 molecules in either highly vibrationally excited states (nu'=32-47) or in low vibrational states (nu'=4-6) of the a3 summation(u)+ triplet ground state. The rate coefficients beta approximately 10(-10) cm3/s are found to be largely independent of the vibrational and rotational excitation indicating unitary limited cross sections.     

Coupled-channel calculations of positron-atom scattering at intermediate energies

We present the cross sections for positron collisions with the alkali atoms Li, Na and K in the close-coupling approximation within the framework of a single-active-electron model. Our target basis sets are represented by Li(2s, 3s, 2p, 3p), Na(3s, 4s, 3p, 4p), and K(4s, 5s, 4p, 5p) respectively. The effects of coupling to the lowest lying Ps channels have been investigated by augmenting the target basis sets with the Ps(1s, 2s, 2p) eigenstates. The calculations have been made for impact energies below 50 eV. The interaction between the positron and the alkali target atom is represented by a model potential obtained using a single-active-electron approximation. The effect on elastic scattering and excitation due to the coupling between the direct and the Ps formation channels is found to be of great significance at low impact energies. The case of K is of particular interest. The inclusion of the Ps channels quantitatively reproduces the maximum in the total cross section at about 6 eV as reported in a recent experiment by Parikh et al. We find that the calculated total cross sections for Na and K are in good agreement with the experimental data of Parikh et al. and Kwan et al. respectively in the energy range of 2–50 eV provided allowance is made for the incomplete elastic discrimination in the experiment. The Ps formation reduces the K(4s4p) cross section at all energies below 30 eV and a reduction is also seen in the elastic cross section for energies below about 7 eV. Similar effects are observed in the case of Li. In the case of Na for impact energies between 2 and 20 eV Ps formation significantly reduces the Na(3s3p) excitation cross section, while the elastic scattering cross section increases. The calculated total Ps formation cross sections for Na and K are in good agreement with the preliminary experimental data of Kwan, Stein and co-workers.     

Cross-channel coupling in positron-atom scattering

Coupled-state calculations including positronium channels are reported for positron scattering by atomic hydrogen, lithium and sodium. Integrated cross sections and total cross sections are presented for all three atoms. For lithium differential cross sections are also given. Throughout, comparison is made between results calculated with and without inclusion of the positronium channels. S-wave cross sections for positron scattering by atomic hydrogen in the Ps(1s, 2s, 2p)+H(1s, 2s, 2p) approximation show the high energy resonance first observed by Higgins and Burke in the coupled-static approximation. This resonance has now moved up to 51.05 eV and narrowed in width to 2.92 eV. Other pronounced structure is seen in the S-wave cross sections between 10 and 20 eV; it is tentatively suggested that this structure may be due to the formation of a temporary pseudo-molecular collision complex. Results calculated in the Ps(1s, 2s, , 2p, ,+H(1s, 2s, , 2p, approximation show convergence towards accurate values in the energy region below and in the Ore gap. Contrary to previous work on lithium using only an atomic basis, it is found that coupling to the 3d state of lithium is not so important when positronium channels are included; this is because a mixed basis of atom and positronium states gives a more rapidly convergent approximation than an expansion based on atom states alone. The threshold behaviour of the elastic cross section and the Ps(1s) formation cross section for lithium is investigated. Results in the Ps(1s, 2s, 2p)+Na(3s, 3p) approximation for sodium show good agreement with the total cross section measurements of Kwan et al.     

ASYMMETRY PARAMETERS AND DIFFERENTIAL CROSS SECTIONS FOR PHOTOIONIZATION-EXCITATION OF HELIUM

Asymmetry parameter β₂ for photoionization of helium leaving the He⁺ ion in the n=2 level and differential cross sections(DCSs) in the n=2,3,4 levels with photon emission angle θ=90⁰ are provided at photon energies 69-76.8 eV employing the R-matrix method with a 20-term target representation, in which five polarization orbitals \bar{6}l are included. The asymmetry parameter β₂ and the DCS, in the n=2 level in the region of 69-73 eV, are in good agreement with available experimental and theoretical results. Above the n=3 threshold, we present new theoretical results along with measurements. No theoretical and experimental results can be used to compare with the present calculations of the DCSs for photoionization into the He⁺ ion in the n=3,4 levels.     

Raman study of Fano interference in p‐type doped silicon

As the silicon industry continues to push the limits of device dimensions, tools such as Raman spectroscopy are ideal to analyze and characterize the doped silicon channels. The effect of inter‐valence band transitions on the zone center optical phonon in heavily p‐type doped silicon is studied by Raman spectroscopy for a wide range of excitation wavelengths extending from the red (632.8 nm) into the ultra‐violet (325 nm). The asymmetry in the one‐phonon Raman lineshape is attributed to a Fano interference involving the overlap of a continuum of electronic excitations with a discrete phonon state. We identify a transition above and below the one‐dimensional critical point (E = 3.4 eV) in the electronic excitation spectrum of silicon. The relationship between the anisotropic silicon band structure and the penetration depth is discussed in the context of possible device applications. Copyright © 2010 John Wiley & Sons, Ltd.     

Delayed onset of 4d photoemission relative to the giant 4d photoabsorption of La

For the giant 4d photoabsorption of La, both the total photoabsorption spectrum and the N_4.5-derived Auger emission intensity spectrum increase significantly above hν ? 112 eV, with spectral peaks at hν = 118 and 119 eV, respectively. However, the predominant 4d photoemission partial cross section shows a delayed onset of ～ 4 eV, with a peak at hν = 121 eV, while the 5s, 5p, and 5d partial cross sections all show a strong resonant enhancement at lower energies, with spectral peaks at hν = 116.6 eV. These results are compared with a recent many-body calculation for Ce. The photon energy dependence of the La 4d_{$\text{5}\text{2}$}/4d_{$\text{3}\text{2}$} photo-emission branching ratio is consistent with a “final-state model.”     

Strong electron correlation in photoionization of spin-orbit doublets

A new and explicitly many-body aspect of the "leveraging" of the spin-orbit interaction is demonstrated, spin-orbit activated interchannel coupling, which can significantly alter the photoionization cross section of a spin-orbit doublet. As an example, it is demonstrated via a modified version of the spin-polarized random phase approximation with exchange, that a recently observed unexplained structure in the Xe 3d(5/2) photoionization cross section [A. Kivim?ki et al., Phys. Rev. A 63, 012716 (2000)] is entirely due to this effect. Similar features are predicted for Cs 3d(5/2) and Ba 3d(5/2).     

Cs(6DJ)+Cs(6S1/2)非弹性碰撞转移截面的测定

在9×1014～2.1×1015cm-3 Cs密度范围内,利用脉冲激光双光子激发Cs(6S1/2)到Cs(6D5/2)态,使用原子荧光光谱方法,通过三能级模型的速率方程分析,由对直接荧光和转移荧光的时间积分强度的测量,得到6D5/2→6D3/2精细结构转移截面为(2.1±0.4)×10-14cm2,而6D3/2态向6D以外态的转移截面为(1.6±0.4)×10-14cm2,它应是过程Cs(6 D3/2)+Cs(6S)→Cs(6P)+Cs(6P),6D3/2→7P3/2和6D3/2→7 P1/2碰撞转移截面之和.第二个实验可以得到6 D3/2→7P3/2和6D3/2→7 P1/2的碰撞转移截面.在1×1012～6×1012cm-3的低密度Cs蒸气中,激光双光子激发6S至6D3/2或6D5/2态,测量6DJ→6PJ'与7PJ"→6S1/2的时间积分荧光强度比,得到6D3/2→7P1/2与6D5/2→7R3/2的碰撞转移截面分别为(7.6±2.4)×10-15cm2与(1.6±0.5)×10-15cm2.由此得到碰撞能量合并的逆过程即[Cs(6D3/2)+Cs(6S1/2)→Cs(6P)+Cs(6P)]的转移截面为(1.3±0.4)×10-14cm2.     

Cs3Cu2I5晶体薄膜吸收谱的研究

本文测定了Ｃｓ３Ｃｕ２ Ｉ５ 晶体薄膜在室温及液氮温度下的吸收谱,并依此计算出该材料的激子参数,即激子束缚能ΔＥ（１）ｅｘ ＝ （０．５３±０．０７）ｅＶ,激子半径ａｅｘ ＝ ０．３２６ ｎｍ ,禁带宽度Ｅｇ ＝ （５．００±０．０７）ｅＶ。在谱分析的基础上,论证了Ｃｓ３Ｃｕ２Ｉ５ 的电子和激子激发定域在该晶体的ＣｕＩ亚晶格之中,同时,揭示了在低温下Ｃｓｘ Ｃｕ１－ ｘ Ｉ系列化合物的第一激子峰位置随其摩尔组分变化的规律。     

Electron-stimulated cesium atom desorption from the Cs/CsAu/Au/W system

This paper reports on a continuation of the investigation of electron-stimulated Cs-atom desorption from a tungsten surface on which cesium and gold films had been adsorbed at T = 300 K. Earlier studies revealed that Cs atoms start to desorb only after more than one monolayer of gold and more than one monolayer of cesium had been deposited on the tungsten surface. In this case, a coating consisting of a gold adlayer on tungsten, a CsAu compound possessing semiconducting properties, and a cesium monolayer capping CsAu (Cs/CsAu/Au/W) is formed on the tungsten surface at 300 K. The yield of atoms from this system exhibits a resonant dependence on the incident electron energy E _e , with an appearance threshold of 57 eV and a maximum at 64 eV. In this case, Cs atoms desorb in two channels, with one of them involving Cs desorption out of the cesium monolayer, and the other, from the CsAu monolayer. The Cs yield at E _e = 64 eV has been investigated in both desorption channels, with an additional cesium coating deposited on the already formed Cs/CsAu/Au/W layered system, as well as of the effect annealing produces on the yield and energy distributions of Cs atoms. It has been demonstrated that Cs atoms evaporated at 300 K on a layered coating with a cesium monolayer atop the CsAu layer on tungsten capped with a gold adlayer, rather than reflected from the cesium monolayer or adsorbing on it, penetrate through the cesium monolayer into the bulk of CsAu even with one CsAu layer present. The desorption yield does not vary with increasing cesium concentration at 300 K, but falls off gradually at 160 K. Annealing within the temperature range 320 K ≤ T _H ≤ 400 K destroys the cesium monolayer and the one-layer CsAu coating, but the multilayer CsAu compound does not break up in this temperature range even after evaporation of the cesium monolayer. It is shown that Cs atoms escape from the multilayer CsAu compound primarily out of the top CsAu layer.     

Electron stimulated desorption of cesium atoms from germanium-covered tungsten

The electron stimulated desorption (ESD) yield and energy distributions for Cs atoms from cesium layers adsorbed on germanium-covered tungsten have been measured for different Ge film thicknesses, 0.25-4.75 ML (monolayer), as a function of electron energy and cesium coverage Θ. The measurements have been carried out using a time-of-flight method and surface ionization detector. In the majority of measurements Cs is adsorbed at 300 K. The appearance threshold for Cs atoms is about 30 eV, which correlates well with the Ge 3d ionization energy. As the electron energy increases the Cs atom ESD yield passes through a wide maximum at an electron energy of about 120 eV. In the Ge film thickness range from 0.5 to 2 ML, resonant Cs atom yield peaks are observed at electron energies of 50 and 80 eV that can be associated with W 5p and W 5s level excitations. As the cesium coverage increases the Cs atom yield passes through a smooth maximum at 1 ML coverage. The Cs atom ESD energy distributions are bell-shaped; they shift toward higher energies with increasing cesium coverage for thin germanium films and shift toward lower energies with increasing cesium coverage for thick germanium films. The energy distributions for ESD of Cs from a 1 ML Ge film exhibit a strong temperature dependence; at T = 160 K they consist of two bell-shaped curves: a narrow peak with a maximum at a kinetic energy of 0.35 eV and a wider peak with a maximum at a kinetic energy of 0.5 eV. The former is associated with W level excitations and the latter with a Ge 3d level excitation. These results can be interpreted in terms of the Auger stimulated desorption model.     

Solid-state effects on the asymmetry parameter and on the partial photoionization cross section of ag4d valence-band at the cooper minimum

We present experimental determinations of the partial photoionization cross section (σ) and the asymmetry parameter (β) for Ag atoms deposited at room temperature and at submonolayer coverages onto a Si (111) substrate and for metallic (polycrystalline) Ag in the photon-energy range of hv = 75–200 eV. The hv dependence of σ and β from Ag atoms on Si compare favorably with the atomic σ and β, where σ and β from metallic Ag are severely distorted. An interpretation scheme is suggested to connect the differences in the cross sections to the solid-state effects on the initial-state wave functions and to connect the differences in the asymmetry parameters to the solid-state effects on both the initial-state and the final-state wave functions.     

Cs2分子的光解离和碰撞能量转移

利用He-Cd+激光器的441.6 nm线光解Cs2分子,使Cs(6D)态得到布居,在Cs2密度为1～9×1015 cm-3范围内,测量原子荧光对分子荧光强度比,得到碰撞转移率系数对解离率之比为9.6×10-18 cm3.测定Cs(6D3/2)对6D5/2荧光强度分支比,得到62D态精细结构能级解离率之比为0.41.从翼激发得到的精细结构转移截面与从共振激发得到的截面结果相符.     

Electron-stimulated desorption of cesium atoms from cesium layers deposited on a germanium-coated tungsten surface

The yield and energy distribution of Cs atoms from cesium layers adsorbed on germanium-coated tungsten were measured, using the time-of-flight technique with a surface-ionization-based detector, as a function of the energy of bombarding electrons, germanium film thickness, the amount of adsorbed cesium, and substrate temperature. The threshold for the appearance of Cs atoms is ～30 eV, which correlates well with the germanium 3d-level ionization energy. As the electron energy increases, the Cs atom yield passes through a broad maximum at ～120 eV. For germanium film thicknesses from 0.5 to 2 monolayers, resonance Cs yield peaks were observed at electron energies of 50 and 80 eV, which can be related to the tungsten 5p and 5s core-level ionization energies. As the cesium coverage increases, the Cs atom yield passes through a flat maximum at monolayer coverage. The energy distribution of Cs atoms follows a bell-shaped curve. With increasing cesium coverage, this curve shifts to higher energies for thin germanium films and to lower energies for thick films. The Cs energy distribution measured at a substrate temperature T = 160 K exhibits two bell-shaped peaks, namely, a narrow peak with a maximum at ～0.35 eV, associated with tungsten core-level excitation, and a broad peak with a maximum at ～0.5 eV, deriving from the excitation of the germanium 3d core level. The results obtained can be described within a model of Auger-stimulated desorption.     

Anisotropic effects in the angular distribution of photoelectrons from cesium 6s

Dirac-Fock calculations show dramatic variations of the asymmetry parameter with energy for Cs 6s in contrast to the β = 2 prediction of more approximate theories.