Electron stimulated desorption of cesium atoms from germanium-covered tungsten

The electron stimulated desorption (ESD) yield and energy distributions for Cs atoms from cesium layers adsorbed on germanium-covered tungsten have been measured for different Ge film thicknesses, 0.25-4.75 ML (monolayer), as a function of electron energy and cesium coverage Θ. The measurements have been carried out using a time-of-flight method and surface ionization detector. In the majority of measurements Cs is adsorbed at 300 K. The appearance threshold for Cs atoms is about 30 eV, which correlates well with the Ge 3d ionization energy. As the electron energy increases the Cs atom ESD yield passes through a wide maximum at an electron energy of about 120 eV. In the Ge film thickness range from 0.5 to 2 ML, resonant Cs atom yield peaks are observed at electron energies of 50 and 80 eV that can be associated with W 5p and W 5s level excitations. As the cesium coverage increases the Cs atom yield passes through a smooth maximum at 1 ML coverage. The Cs atom ESD energy distributions are bell-shaped; they shift toward higher energies with increasing cesium coverage for thin germanium films and shift toward lower energies with increasing cesium coverage for thick germanium films. The energy distributions for ESD of Cs from a 1 ML Ge film exhibit a strong temperature dependence; at T = 160 K they consist of two bell-shaped curves: a narrow peak with a maximum at a kinetic energy of 0.35 eV and a wider peak with a maximum at a kinetic energy of 0.5 eV. The former is associated with W level excitations and the latter with a Ge 3d level excitation. These results can be interpreted in terms of the Auger stimulated desorption model.     

Electron-stimulated desorption of rare-earth metal atoms

The yield of europium and samarium atoms in electron-stimulated desorption from layers of rare-earth metals (REMs) adsorbed on the surface of oxidized tungsten has been measured as a function of the incident electron energy, surface coverage by REMs, degree of tungsten oxidation, and substrate temperature. The measurements were performed using the time-of-flight method with a surface-ionization-based detector within the substrate temperature interval 140–600 K. The yield studied as a function of electron energy has a resonance character. Overlapping resonance peaks of Sm atoms are observed at electron energies of 34 and 46 eV, and those of Eu atoms, at 36 and 41 eV. These energies correlate well with the REM 5p and 5s core-level excitation energies. The REM yield is a complex function of the REM coverage and substrate temperature. The peaks due to REM atoms are seen at low REM coverages only, and their intensity usually passes through a maximum with increasing coverage and substrate temperature. The concentration dependence of the REM atom yield is affected by the deposition of slow Ba⁺ ions, but only if they are deposited after the REM adsorption. At higher REM coverages, additional peaks are observed at electron energies of 42, 54, and 84 eV, which originate from excitation of the 5p and 5s tungsten levels and result from desorption of SmO and EuO molecules. The temperature dependence of the intensity of these peaks is explained to be due to the order-disorder phase transition. The desorption of REM atoms is the result of their reversed motion through the adsorbed REM layer, and the SmO and EuO molecules desorb due to the formation of an antibonding state between the REM oxide molecules and the tungsten ions.     

Resonances in the cesium atom yield in electron-stimulated desorption from tungsten coated with a germanium monolayer

The yield and energy distributions of Cs atoms emerging from cesium layers, which are adsorbed on tungsten coated with a thin germanium film (1-to 2-monolayers thick), have been measured as a function of the incident electron energy, the amount of adsorbed cesium, and the substrate temperature. The measurements were performed by the time-of-flight technique with a surface ionization detector. At low cesium coverages (Θ < 0.1), the Cs atom appearance threshold at a substrate temperature T = 160 K is ～24 eV, which correlates with the Cs 5s-level ionization energy. As the electron energy is increased, the yield passes through a broad plateau and reaches saturation. The signal intensity in the plateau region decreases gradually with increasing cesium coverage and tends to zero for Θ > 0.14. For Θ ≥ 0.15, the cesium atom appearance threshold shifts to ～30 eV, which corresponds to the Ge 3d-level ionization energy and the plateau is replaced by a resonance peak at ～38 eV, which can be identified with the ionization energy of the W 5p _3/2 level. This peak is observed only for Θ < 0.3 and T = 160 K. For Θ ≥ 0.3, there appears a resonance peak at ～50 eV, and for Θ ≥ 0.5, another resonance peak appears at ～80 eV. These peak positions correlate with the ionization energies of the W 5p _1/2 and W 5s levels, and their intensity is maximum at Θ = 1. The Cs atom energy distributions for Θ < 0.15 consist of a bell-shaped peak with a maximum at ～0.55 eV, and those for Θ ≥ 0.15 contain two nearly resolved maxima, a broad one peaking at ～0.5 eV and a narrow one at ～0.35 eV. The above results argue for the existence of three channels of Cs atom desorption. One channel involves reverse motion of the Cs²⁺ ion; another channel, neutralization of the adsorbed Cs⁺ ion following the Auger decay of a vacancy in the Ge atom; and the third channel involves desorption of a CsGe molecule as it is repelled from a W core exciton.     

Samarium atom yield under electron-stimulated desorption from oxidized tungsten surface

The yield of samarium (Sm) atoms under electron stimulated desorption from Sm layers adsorbed on the surface of oxidized tungsten was studied as a function of incident electron energy, surface coverage by samarium, degree of tungsten oxidation, and substrate temperature. The measurements were conducted by the time-of-flight technique with a surface ionization detector in the substrate temperature interval from 140 to 600 K. The yield vs. incident electron energy function has a resonance character. Overlapping resonance peaks of Sm atoms are observed at electron energies of 34 and 46 eV, which may be related to excitation of the Sm 5p and 5s levels. The Sm yield is a complex function of samarium coverage and substrate temperature. Sm atom peaks occur only in the Sm coverage range from 0 to 0.2 monolayers (ML), in which the yield passes through a maximum. The shape of the yield temperature dependence is a function of Sm coverage. For low Sm cover-ages (<0.07 ML), the yield decreases slowly with the temperature increasing to 270 K, after which it drops to zero at temperatures above 360 K. At higher coverages, the Sm yield passes through a maximum with increasing temperature and additional peaks appear at electron energies of 42, 54, and 84 eV, which can be assigned to excitation of the tungsten 5p and 5s levels. These peaks are most likely associated with desorption of SmO molecules, whose yield reaches a maximum at an Sm coverage of about 1 ML.     

Charge accumulation layer in Cs,Ba/<Emphasis Type="Italic">n</Emphasis>-GaN(0001) ultrathin interfaces: Electronic and photoemission properties

Experimental studies and theoretical calculations of the photoemission from Cs/n-GaN(0001) and Ba/n-GaN(0001) ultrathin interfaces were carried out. The electronic properties of the interfaces were studied in situ using threshold photoemission spectroscopy under vacuum at a residual pressure of P ～ 5 × 10^?11 Torr. A new effect was revealed, namely, photoemission with a high quantum yield under excitation with light in the transparency region of GaN. It was shown that adsorption of Cs or Ba on n-GaN brings about the formation of a quasi-two-dimensional electron channel, i.e., a charge accumulation layer directly near the surface. The dependences of the photoemission spectra and work function on the thickness of Cs and Ba coatings were investigated. It was established that adsorption of Cs and Ba leads to a sharp decrease in the work function by ～1.45 and ～1.95 eV, respectively. The photoemission spectra were calculated, and parameters of the accumulation layer, such as the energy position of the layer below the Fermi level for different Cs and Ba coverages, were determined. It was demonstrated that the energy parameters of the accumulation layer on the n-GaN(0001) surface can be controlled by properly varying the Cs or Ba coverage. The layer thickness was found to reach a maximum for a cesium coverage of ～0.5 monolayer.     

Study of postcollision interaction upon electron-impact excitation of the magnesium atom

The excitation functions of the spectral lines of the MgI principal series in the VUV region (for the principal quantum numbers n = 4–7) are studied in experiments on collisions of electrons with magnesium atoms in the range of electron energies from the excitation thresholds to ～25 eV. The scatter in the electron energy was ～0.7 eV. Above the ionization potential, some singularities attributed to autodetachment and autoionization states were found in excitation functions. Shifts to higher energies with increasing n, which take place for the most significant singularity (maximum) relative to the autoionization state 3p4s ¹ P ₁ ^o , are explained by the important role played by this state in the population of the initial levels through the mechanism of post-collision interaction. The theoretical analysis of the experimental results based on the classical model of the postcollision interaction estimates the width of the autoionization state as ～0.45 eV, which is close to the data of other researchers.     

Electron-stimulated cesium atom desorption from the Cs/CsAu/Au/W system

This paper reports on a continuation of the investigation of electron-stimulated Cs-atom desorption from a tungsten surface on which cesium and gold films had been adsorbed at T = 300 K. Earlier studies revealed that Cs atoms start to desorb only after more than one monolayer of gold and more than one monolayer of cesium had been deposited on the tungsten surface. In this case, a coating consisting of a gold adlayer on tungsten, a CsAu compound possessing semiconducting properties, and a cesium monolayer capping CsAu (Cs/CsAu/Au/W) is formed on the tungsten surface at 300 K. The yield of atoms from this system exhibits a resonant dependence on the incident electron energy E _e , with an appearance threshold of 57 eV and a maximum at 64 eV. In this case, Cs atoms desorb in two channels, with one of them involving Cs desorption out of the cesium monolayer, and the other, from the CsAu monolayer. The Cs yield at E _e = 64 eV has been investigated in both desorption channels, with an additional cesium coating deposited on the already formed Cs/CsAu/Au/W layered system, as well as of the effect annealing produces on the yield and energy distributions of Cs atoms. It has been demonstrated that Cs atoms evaporated at 300 K on a layered coating with a cesium monolayer atop the CsAu layer on tungsten capped with a gold adlayer, rather than reflected from the cesium monolayer or adsorbing on it, penetrate through the cesium monolayer into the bulk of CsAu even with one CsAu layer present. The desorption yield does not vary with increasing cesium concentration at 300 K, but falls off gradually at 160 K. Annealing within the temperature range 320 K ≤ T _H ≤ 400 K destroys the cesium monolayer and the one-layer CsAu coating, but the multilayer CsAu compound does not break up in this temperature range even after evaporation of the cesium monolayer. It is shown that Cs atoms escape from the multilayer CsAu compound primarily out of the top CsAu layer.     

Effect of deposition of samarium atoms on the electron-stimulated desorption of cesium and samarium atoms from the surface of tungsten coated by gold and cesium

It has been shown that deposition of Sm atoms on W(100) surface coated by several monolayers of gold and cesium affects noticeably the yield of Cs atoms in electron-stimulated desorption (ESD) from this surface. The measurements have been performed by the time-of-flight method with a surface-ionization detector. The paper reports on the first observation of ESD of Sm atoms from the tungsten surface coated by layers of gold and cesium. The ESD threshold for Sm atoms, E _e = 57 eV, coincides with that for Cs atoms and corresponds to the energy of the Au 5p _3/2 core level. The dependence of the ESD yield of Sm atoms on the bombarding electron energy E _e follows a resonance pattern in the form of a narrow peak located in the range 57 ≤ E _e ≤ 66 eV. Deposition of Sm atoms at room temperature (～300 K) reduces (by a factor of about two) the ESD yield of Cs atoms for 600 s, and deposition of Sm atoms at 160 K reduces the ESD of Cs atoms down to zero already for 270 s. This difference finds explanation in the study of the change the structure of the top layer of the (Au + Cs)/W surface coating undergoes under cooling of the surface from 300 to 160 K.     

Carbon segregation on a tungsten surface

New measurements are performed and a comprehensive analysis of experimental data is made on the dependence of equilibrium carbon coverage θ on a tungsten surface on its temperature and the degree of carbon loading. It is shown that if the volume is free of carbon, the variation of θ for T≥1400 K can be approximately described by the balance between the carbon flows through the boundary with the activation energy for transition into the bulk E₁=4.6 eV and the segregation energy ΔE=1.7 eV. For tungsten loaded preliminarily with carbon to a content of ≈10^?2 at. %, the θ(T) relation cannot be described in terms of the equilibrium conditions with constant E₁ and ΔE, because these quantities depend on the degree of carbon loading; E₁ grows from 4.6 to 6.8 eV and ΔE grows from 1.7 to 2.3 eV with an increase in carbon content from 0 to 10^?2 at. %. These variations are attributed to the bonds becoming stronger in carbon-loaded tungsten with increasing carbon content.     

On EAS spectrum with extremely low content of hadrons in the primary-energy range ∼10<Superscript>14</Superscript>−10<Superscript>15</Superscript> eV

The distribution of energy fluxes of the hadron component of extensive air showers through an ion-ization calorimeter in the primary-energy range ～3 × 10¹³?10¹⁶ eV is considered. Extensive air showers with zero and minimum energy fluxes of the hadron component are selected. It is concluded that the primary-energy range E ₀ ≈ 1 × 10¹⁴?2 × 10¹⁵ eV contains isotropic γ radiation with a spectrum close to bell-shaped, having a maximum near E ₀ ≈ 2.2 × 10¹⁴ eV and an additional peak near E ₀ ≈ 1.6 × 10¹⁵ eV.     

Frequency shift of the magnetic resonance in 5<Emphasis Type="Italic">s</Emphasis><Superscript>2</Superscript><Emphasis Type="Italic">S</Emphasis><Subscript>1/2</Subscript> rubidium atoms due to spin-exchange collisions with optically oriented cesium atoms

For the case of cesium atoms optically oriented in a mixture of cesium and rubidium vapors, the temperature dependence of the frequency shift of a magnetic resonance excited in a set of Zeeman sublevels for two hyperfine states of ⁸⁷Rb 5s ² S _1/2 atoms. It is shown that, in a weak magnetic field of about 2 × 10^?6 T, this shift is determined by the spin-exchange interaction of rubidium atoms with optically oriented ¹³³Cs atoms.     

Generation and removal of adatom-induced electronic states on the Cs/GaAs(001) surface

A nonmonotonic behavior of band bending φ _S as a function of cesium coverage ? on the Cs/GaAs(001) surface is observed in the form of several maxima and minima. This behavior indicates the formation of the quasi-discrete spectrum of the adatom-induced electronic surface states. The hysteresis of the φ _S (?) dependence under adsorption and subsequent thermodesorption of cesium indicates the metastability of the Cs/GaAs(001) system.     

Oscillations in the threshold photoemission spectra of GaN(0001) with submonolayer Cs coverages

It is found that Cs adsorption on the n-type GaN(0001) surface generates an unusual change in the electronic properties of the surface and the near-surface space-charge layer, which leads to the appearance of photoelectron emission upon excitation in the transparent region of GaN. It is established that the photoemission is due to the formation of quasimetallic states induced by Cs adsorption in the band-bending region near the surface. The behavior of the photoemission threshold upon excitation by s-polarized light is studied as a function of the Cs coverage. It is found that the minimum value of the threshold corresponds to ～1.4 eV at a concentration of Cs atoms of ～4.5×10¹⁴ atom/cm² in the submonolayer coverage. A new effect is revealed, namely, the appearance of oscillations in the spectral curves of threshold photoemission. A model is proposed for photocurrent oscillations that takes into account the formation of quasimetallic states in the near-surface layer of GaN band bending and the occurrence of interference in the GaN slab upon light irradiation in the transparent region.     

Growth of germanium thin films on the W(100) surface

The growth of Ge thin films on the surface of a textured predominantly (100)-oriented tungsten ribbon is studied by thermal desorption spectrometry at different substrate temperatures over a wide range of coverages. The mechanism of growth of the Ge films at T = 300 K is similar to a layer-by-layer mechanism. For T > 300 K, the films grow through the Stranski-Krastanov mechanism, according to which the completion of the monolayer coverage is followed by the formation of three-dimensional crystallites; as a result, the desorption kinetics changes. For small coverages (i.e., in the absence of lateral interactions), the activation energy of Ge desorption from W(100) is E = 4.9 ± 0.2 eV. In a monolayer, this activation energy decreases to E = 3.9 ± 0.2 eV due to the repulsive lateral interactions. The energy of pairwise lateral interactions is determined to be ω = 0.3 eV.     

TeV signatures of compact UHECR accelerators

We numerically study particle acceleration by the electric field induced near the horizon of a rotating supermassive (M ～ 10⁹–10¹⁰M_⊙) black hole embedded in the magnetic field B. We find that acceleration of protons to the energy E ～ 10²⁰ eV is possible only at extreme values of M and B. We also find that the acceleration is very inefficient and is accompanied by a broad-band MeV-TeV radiation whose total power exceeds the total power emitted in ultrahigh energy cosmic rays (UHECRs) at least by a factor of 1000. This implies that if O(10) nearby quasar remnants were sources of proton events with an energy E > 10²⁰ eV, then each quasar remnant would, e.g., overshine the Crab Nebula by more than two orders of magnitude in the TeV energy band. Recent TeV observations exclude this possibility. A model in which O(100) sources are situated at 100–1000 Mpc is not ruled out and can be experimentally tested by present TeV γ-ray telescopes. Such a model can explain the observed UHECR flux at moderate energies E ≈ (4–5) × 10¹⁹ eV.     

Effect of secondary electrons on the yield of electron-stimulated desorption of neutral atoms under differently localized core-level excitations in a substrate

This paper reports on the results of a comparative analysis of the changes in the electron-stimulated desorption (ESD) yield of neutral particles from layers of alkali metal and Ba atoms deposited on the surface of a metal atop an oxygen (O/W, O/Mo) or germanium (Ge/W) film as a function of the incident electron beam energy E. The atomic yield q(E) is compared with the ionization cross sections of the core levels whose ionization potentials coincide with the ESD yield thresholds of the atoms. Three types of dependences q(E) are discussed, and the role of the secondary electrons generated in the electron-bombarded substrate for each type of the dependence of the ESD yield on E is elucidated. The analysis is based on the experimental studies performed by the authors in the recent years, starting from 1991. It is shown that the actual type of dependence q(E) is determined both by the actual localization of the atom excited by the electron beam and by the extent of localization of the core excitation resulting in ESD.     

Cesium adsorption on the β2-GaAs(001) surface

The results of first-principles calculations of the cesium adsorption energy on the β2-GaAs(001) surface performed within approaches of the density functional theory are presented for two possible terminations of the surface. It is shown that, among the considered high-symmetry positions, the energy-preferred position for cesium is position T ₃ when the surface layer contains arsenic and position T ₄ for gallium terminated surface. Cesium introduces insignificant perturbations in the positions of surface-layer atoms, and surface dimers do not break even in the case of adsorption at the dimer bridge and top positions. It is shown that cesium bonding to the GaAs (001) substrate can be explained by sp hybridization of arsenic and gallium orbitals as well as by formation of cesium states mixed with delocalized states of a clean surface. At low coverage, more preferable adsorbate sites are those with nearest neighbor arsenic atoms for both surface terminations.     

Coulomb deexcitation of muonic hydrogen within the quantum close-coupling method

The Coulomb deexcitation of muonic hydrogen in collisions with the hydrogen atom has been studied in the framework of the fully quantum-mechanical close-coupling method for the first time. The calculations of the l-averaged cross sections of the Coulomb deexcitation are performed for (μp)_n and (μd)_n atoms in the initial states with the principal quantum number n = 3–9 and at relative energies E = 0.1–100 eV. The obtained results for the n and E dependences of the Coulomb deexcitation cross sections drastically differ from the semiclassical results. An important contribution of the transitions with Δn > 1 to the total Coulomb deexcitation cross sections (up to ～37%) is predicted.     

Investigating the spectra of electron spin resonance in SiGe/Si heterolayers doped with phosphorous

Studies of the spin resonance spectra of electrons localized on donors and the conduction electrons in Si_{1 ? x} Ge _x layers grown on silicon show that the phosphorous atoms in a SiGe layer can have two positions in the lattice. The line with g ～ 1.998 refers to the electron localized in the phosphorous atom with a predominantly silicon environment; the line with g ～ 1.994 is observed when there is a substantial concentration of germanium in the phosphorous environment.     

Messung der Spinpolarisation langsamer Elektronen nach elastischer Streuung an festen Hg-Targets

SpinpolarizationP(Θ) of slow electrons elastically scattered by a solid Hg-target has been studied in a double-scattering experiment for electron energies between 300 eV and 900 eV. For the same energy range the angular dependence of the scattered intensity has been measured. Maximum degree of polarization found isP=?0.23±0.04 (E=900 eV,Θ=105°).