A model for growth directional features in silicon nanowires

Long silicon nanowires (SiNWs) grown by laser ablation or by thermal evaporation of monoxide source materials are primarily oriented in the <112> direction, and some in the <110> direction, but rarely in the <100> or <111> directions. We propose a model to explain these SiNW growth directional features. The model consists of two parts. Part one is concerned with mechanism-based criteria and part two with applying these criteria to explain the experimental results. Four criteria are considered: (i) the stability of a Si atom occupying a surface site; (ii) the Si {111} surface stability in the presence of oxygen; (iii) the stepped Si {111} surface layer lateral growth process; and (iv) the effect of dislocations in providing perpetuating {111} steps to facilitate SiNW growth. Analyses of SiNW growth in accordance with these criteria showed that <112> and <110> are the preferred SiNW growth directions, and that <111> and <100> are not. Received: 12 November 2001 / Accepted: 20 November 2001 / Published online: 23 January 2002     

Atom force microscopy study on HTHP as-grown diamond single crystals

For understanding the mechanism of diamond growth at high temperature–high pressure (HTHP) from a metallic catalyst–graphite system, it is of great interest to perform atomic force microscopy (AFM) experiments, which provide a unique technique different from that of normal optical and electronic microscopy studies, to study the topography of HTHP as-grown diamond single crystals. In the present paper, we report first AFM results on diamond single crystals grown from a Fe-Ni-C system at HTHP to reveal the growth mechanism of diamond single crystals at HTHP. AFM images for as-grown diamond samples show dark etch pits on the (111) surface, indicating dislocations. Some fine particles about 100–300 nm in dimension were directly observed on the (100) diamond surface. These particles are believed to have been formed through transition of graphite to diamond under the effect of the catalyst and to have been transported to the growing diamond surface through a metallic thin film by diffusion. The roughness of the (100) diamond surface is found to be about several tens of nanometers through profile analysis. The diamond growth at HTHP, in a sense, could be considered as a process of unification of these fine diamond particles or of carbon-atom-cluster recombination on the growing diamond crystal surface. Successive growth interlayer steps on the (111) diamond surface were systemically examined. The heights of the growth interlayer steps were measured by sectional analysis. It was shown that the heights of the growth interlayer steps are quite different and range from about 10 to 25 nm. The source of the interlayer steps might be dislocations. The diamond-growth mechanism at HTHP could be indicated by the AFM topography of the fine diamond particles and the train-growth interlayer steps on the as-grown diamond surfaces. Received: 29 March 2001 / Accepted: 20 August 2001 / Published online: 2 October 2001     

Evaluating the electric property of different crystal faces and enhancing the Raman scattering of Cu2O microcrystal by depositing Ag on the surface

The surface electric property of Cu₂O microcrystal affects the interaction of facets with substance in the aqueous solution, and hence plays a key role in determining the photocatalytic activity. In this paper, the capability of Cu₂O microcrystals with exclusive {111}, {110} or both lattice surfaces in reducing Ag⁺ to Ag⁰ were investigated. Ag particles selectively deposited on {111} surfaces of Cu₂O, while not on {110} surfaces. The different behaviors of the two surfaces are mainly attributed to their different electric properties: negatively-charged {111} surfaces absorb Ag⁺ ions while positively-charged {110} surfaces repel them. Raman scattering of Cu₂O {111} surfaces was enhanced by the photo-deposition of Ag particles.     

The initial oxidation of molybdenum: IV. Epitaxial growth of oxide on molybdenum

The oxide which grows in low oxygen pressure and at temperatures between 700 and 1000 K on molybdenum is shown to be MoO₂. The epitaxial relationships between the oxide and the metal (100), (110) and (111) surfaces are given. The epitaxial relationships of oxide on the molybdenum (100) and (110) surfaces are geometrically equivalent. The oxide grows on the (111) molybdenum surface with no major oxide plane parallel to the substrate. It is suggested that the epitaxy of MoO₂ on the (111) surface is a consequence of growth on {211} molybdenum facets. The atomic positions in the pairs of interfacial planes found are given. There is little agreement between the positions of ions in the oxide and substrate lattice sites. Only in the postulated case of MoO₂ on {211} Mo facets is a small misfit found.     

Dependence of Limited Growth Rate of High-Quality Gem Diamond on Growth Conditions

The growth rate of diamond has been investigated for a long time and researchers have been attempting to enhance the growth rate of high-quality gem diamond infinitely. However, it has been found according to previous research results that the quality of diamond is debased with the increase of growth rate. Thus, under specific conditions, the growth rate of high-quality diamond cannot exceed a limited value that is called the limited growth rate of diamond. We synthesize a series of type Ib gem diamonds by temperature gradient method under high pressure and high temperature （HPHT） using the as-grown {100} face. The dependence of limited growth rate on growth conditions is studied. The results show that the limited growth rate increases when synthetic temperature decreases, also when growth time is prolonged.     

A double-temperature-gradient technique for the growth of single-crystal fullerites from the vapor phase

Fullerite single crystals were prepared by a sublimation-condensation method in a closed evacuated glass tube situated in a double-temperature-gradient furnace. Crystals of various size and up to 9 mg weight with well expressed smooth and shiny faces were obtained. X-ray analysis, interfacial angle measurements and observed morphological habits of selected crystals of C₆₀ confirm the theoretically predicted and experimentally well established fcc structure at room temperature with two types of morphological faces, namely {111} and {100}. A strong tendency to twinning was observed. In the case of C₇₀ crystals, a pure fcc structure was observed. Information on growth kinetics and on instability versus exposure to air and light were obtained from surface studies. Characteristic changes in a thin surface layer were observed when crystals were exposed to air and light. A new phase of C₆₀ stabilized by oxygen was characterized.     

Equilibrium shape of nickel crystal

The equilibrium shape of pure nickel and the effect of carbon on changes in the equilibrium shape at 1200°C were investigated. A statistical observation on the size-dependent, time-dependent and carbon-induced morphological evolution of crystallites suggested that the equilibrium crystal shape (ECS) of pure nickel is a polyhedron consisting of {111}, {100}, {110} and {210} surfaces. However, crystals with an extensive proportion of {320} surfaces were also frequently observed. The appearance of {320} surfaces was interpreted as kinetically stabilized metastable surfaces, which survived during the thermal equilibrating process, possibly due to a high nucleation energy barrier for their removal. On the other hand, the ECS of pure nickel was observed to change dramatically into a spherical shape with facets of {111}, {100}, {110} and {210} without exception under a carburized atmosphere, which indicates that carbon not only facilitates surface diffusion by which energetically more stable surfaces can be easily developed but also decreases the surface energy anisotropy. Together with X-ray photoelectron spectroscopy studies, it was proposed that the carbon-induced changes in the ECS are possibly due to a solid solution effect, which could lead to a reduction in the binding energy among atoms in the bulk as well as on the surfaces.     

Growth and stability of carbon islands on platinum surfaces

Details of the growth of C(graphite) islands and their stability on Pt surfaces were studied by FEM, UHV-SEM and very high resolution scanning AES. Initial nucleation of the C occurs on dislocations in the curved high index surface areas. Above 1150 K these randomly distributed islands dissolve and face specific layers are formed on {110} which can extend along the 〈100〉 zones all the way to the {100} planes. The sequence of stability of graphite layers on Pt is: {110} > all other {hk0} on the 〈100〉 zone except {100} > {100} followed closely by {111}. Concerning this layer stability, epitaxial mismatch plays a subservient role to the dipole interaction between metal substrate and graphite layer.     

Mechanical properties and photomechanical effect in GaP single crystals

Mechanical properdes of GaP single crystals have been investigated from 100° to 300°C by observing dislocation rosette patterns on indented specimen surfaces. It has been found that GaP has mechanical properties which are common to those of other III–V compounds or elemental semiconductors in several points: the {111} surface polarity dependence of microhardness, the mobility difference between α- and β-dislocations, and the conduction type dependence of dislocation mobility. The growth of dislocation rosettes is suppressed by baking specimens in air. Contrary to the case of II–VI compounds, illumination of visible light during indentation enhances the mobility of dislocations. These experimental results are discussed in terms of an effect of electronic charge of dislocation on its mobility.     

A Monte Carlo study of surface segregation in alloys

The Monte Carlo method has been applied to the study of surface segregation in a multi-layer, regular solution model of alloy surfaces. Three different alloy configurations have been investigated: semi-infinite slabs, thin films and small particles. The results show that the alloy component with the lowest surface energy tends to segregate to the first three or four surface atom layers and that segregation is greater in clustering alloys than in ordering alloys. Furthermore, segregation is more pronounced in low coordination surfaces, as evidenced by a comparison of {110} and {100}-oriented surfaces of fcc alloys. The degree of surface segregation in thin films and small particles (in the particle size range studied) tends to be smaller than in semi-infinite slabs, because of mass conservation constraints, and decreases with decreasing film thickness and particle size. The results obtained are contrasted with previous calculations and possible avenues for improving surface segregation models are discussed.     

Surface composition effects on martensitic phase transformations in nickel aluminium nanowires

Atomistic simulations are utilized to quantify the effects of surface composition on stress-induced B2 to body centred tetragonal (BCT) martensitic phase transformations in intermetallic nickel aluminium (NiAl) nanowires. The simulations show that the phase transformation is observed in all considered cases, regardless of the material composition of the transverse {100} surfaces of the initially B2 wires. The results indicate that, for ?100? oriented B2 wires with {100} transverse surfaces, the {100} orientation and not the material composition of the {100} surfaces is the dominant factor in controlling the ability of NiAl alloys to undergo martensitic phase transformations at nanometer scales.     

钼晶体中的位错线蚀象的研究

实验结果表明,应用甲醇、硫酸、盐酸的混合液为电解浸蚀剂,可以在钼晶体的{100},{111}及{110}面上显示位错蚀斑,而在{111}面及{110}面上同时可以显示出排列成平行线或六方网络的蚀线,这些蚀线被证明为位错线的蚀象。根据观测结果,总结出解释位错线蚀象的经验规律:观测到的蚀象相当于一定深度内位错线在观察面的投影;蚀象的宽度决定于位错线段到原始表面的距离,距离愈远,宽度愈细,类似于一种夸张的光学透视效应,因而根据蚀象就可以直接推出位错线在空间的位置,采用多次浸蚀的方法,对于一些位错空间排列组态的实     

Electron states and atomic positions at the {001}, {110} and {111} faces of W and Mo

The results of ab initio calculations on the {001}, {110} and {111} surfaces of W and Mo and on the (√2 × √2)R45° reconstructed W {001} surface are presented. A distribution of surface states in reasonable agreement with experiment is found. A simple parametrisation of the short range repulsive force between transition metal atoms is used to predict, for all these surfaces, relaxations which are comparable with those observed. This same parametrisation indicates that the W and Mo {001} surfaces are stable to proposed reconstructive displacements.     

Adsorption and desorption of no from Rh{111} and Rh{331} surfaces

The adsorption and desorption chemistry of NO on the clean Rh{111} and Rh{331} single crystal surfaces was followed with SIMS, XPS, and LEED. Results suggest dissociative NO adsorption occurs at step and/or defect sites. At saturation coverage there was ～ 10 times more dissociated species on the Rh{331} surface at 300 K than on the Rh{111} surface. On both surfaces two molecular states of NO_ads have been identified as β₁, and β₂ which possess different chemical reactivity. Under the condition of saturation coverage the β₁ and β₂ states are populated on the Rh{111} surface in a different proportion than on the Rh{331} surface. Further, their population on both surfaces is coverage and temperature dependent. When the sample is heated to desorb the saturation overlayer formed on the Rh{111} and Rh{331} crystal surfaces, approximately 50% of the overlayer is found to desorb below ? 400 K primarily from the β₂ state, molecularly as NO(g). Between 300 and 400 K the β₁ state dissociates as binding sites necessary to coordinate N_ads and O_ads are freed by desorption of NO(g).     

Atomic-Scale Simulation Study of Equilibrium Solute Adsorption at Alloy Solid-Liquid Interfaces

Equilibrium structural properties of solid-liquid interfaces in Cu-Ni alloys are studied by Monte-Carlo simulations employing interatomic potentials based on the embedded-atom method. We describe a thermodynamic-integration approach used to derive bulk concentrations and densities for solid and liquid phases in two-phase thermodynamic equilibrium. These results are used as a basis for constructing three-dimensional supercell geometries employed in Monte-Carlo-simulation studies of solid-liquid interface properties for {100} and {111} crystallographic orientations. At a temperature of 1750 K (four percent below the calculated melting point of pure Ni) equilibrium density and concentration profiles have been derived, allowing a calculation of the relative Gibbsian adsorption, , of Cu (solute) relative to Ni (solvent) at solid-liquid interfaces in Ni-rich alloys. We derive absorption values of and –0.23 ± 0.50 atoms/nm² for {100} and {111} interfaces, respectively. These results are discussed in the context of available experimental measurements and continuum-theory results for adsorption at heterophase interfaces.     

Field emission studies of oxygen on silver tips

Clean [111] oriented silver field emitting tips have been exposed to oxygen at 10^?3 Torr for 1 min at temperatures ranging from ? 170 to 200°C. From 50 to 200°C, an adsorption structure is formed that is stable in oxygen. The structure is characterized by intensely emitting regions on either side of enlarged {110}, {210} and {310} faces and a dark region in the (111)-{100} zone line directions. For adsorption from ? 170 to 200°C, the structure of the patterns depends distinctly on the adsorption temperature because the coverages are different and adsorption is activated. Oxygen adsorption at 10^?3 Torr for 1 min at 0°C causes an increase in the average work function of 1.15 eV. At 0°C, silver was exposed increasingly at 10^?6 Torr until 6100 L was reached. The work function increased progressively by 0.61 eV for this exposure. The {111}, {100}, {311}, {211} and {533} faces are attacked first. Then, the {110} faces are attacked followed by the {210} {310} and {320}. Heating of the adsorption layer formed at 0°C produced no changes in pattern and work function up to 100°C. Between 100 and 200°C, a strong decrease in work function and changes in the pattern result from oxygen penetration into the bulk.     

Growth of nano-crystalline diamond on single-crystalline diamond by CVD method

Nanocrystalline (NC) diamond films are grown by chemical vapor deposition on various single crystal diamond faces. Under conditions of NC diamond growth, the growing filmmorphology is reduced to two planes: {100} and {111}. The {100} planes are smooth and homoepitaxial layerby-layer growth occurs on them, whereas the NC film formed by twin crystalliteswith sizes of several tens and hundreds nanometers grows on {111} planes. Nitrogen impurity sharply increases the diamond growth rate.     

高分辨X射线衍射研究杂质对晶体结构完整性的影响

用水溶液生长晶体的方法生长出了不同掺杂的Sr(NO₃)₂晶体.用电子探针研究了杂质在晶体中的分布情况.结果表明,杂质在晶体中存在扇形分凝,其中Ba在{100}扇形区的含量大于{111}扇形区,而Pb的分凝情况相反,在{111}扇形区的含量大于{100}扇形区.用高分辨X射线衍射摇摆曲线技术研究了纯的、掺Ba的和掺Pb的Sr(NO₃)₂晶体的完整性情况,并用X射线衍射动力学理论计算了完整Sr(NO₃ 关键词： 高分辨X射线衍射 杂质 水溶液晶体生长     

Dislocations in Fe-3% Si alloy single crystals deformed at a higher rate

The method of etching dislocations is used to study the distribution of dislocations and twins in Fe-3% Si alloy single crystals prepared from the melt after plastic deformation with higher speed. The crystals are deformed by twinning in the 〈111〉 directions along the {112} planes and by slip in the 〈111〉 directions along the {110} planes. The results prove that the dislocations causing plastic deformation move in the {110} planes during both fast and slow deformation. The difference in the slip surfaces during fast and slow deformation is explained by the different number of cross slips per unit dislocation path.     

Secondary defects in low-energy As-implanted Si

14 /cm² dose of As ions followed by both isochronal and isothermal annealing. The elementary defects generated first during solid-phase epitaxial recovery of implantation-induced amorphous layers at temperatures of 550 °C and/or 600 °C are {311} defects 2–3 nm long. They are considered to be transformed into {111} and {100} defects after annealing at temperatures higher than 750 °C. These secondary defects show the opposite annealing behavior to the dissolution and growth by the difference of their depth positions at 800 °C. This phenomenon is explained by the diffusion of self-interstitials contained in defects. With regard to the formation and dissolution of defects, there is no significant difference between the effects of rapid thermal annealing (950 °C for 10 s) and furnace annealing (800 °C for 10 min). Received: 14 November 1997/Accepted: 16 November 1997