Hot́ hole anisotropic effect in silicon and germanium

Anisotropic effect of the hole drift velocity in silicon and germanium has been investigated with the time of flight technique by applying the electric field parallel to the <100 and <111 crystallographic axis. The measurements were performed for electric fields ranging from 10 to 3 × 10⁴V/cm and temperatures from 40 to 200°K. The results indicate that the anisotropic effect v_d<100/v_d<111 increases with decreasing temperature and increasing electric field, and reaches a saturation value at high electric fields (? 10⁴V/cm). The maximum anisotropic effect for Ge is 1.25 at 40°K and for Si is 1.2 at 45°K. A qualitative analysis of the experimental data indicates that the anisotropic effect is due to the warped heavy-valence-band shape.     

Hall mobility of hot electrons in CdS

Photo-Hall effect of hot electrons in a pure single crystal of CdS was observed, for the first time. The measurement was carried out for electric fields up to 4,300 V/cm in magnetic fields up to 40 kOe at 4.2 K. The saturation of the drift velocity V_d of electrons due to optical phonon emission was observed. The saturated value of V_d is found to be about 1.7 × 10⁷ cm/sec.     

Transport properties of n-type ferromagnetic semiconductor HgCr2−xInxSe4(x = 0.100)

Measurements of the electrical conductivity, magnetoresistance, and Hall effect were performed on a n-type ferromagnetic semiconductor HgCr_2?xIn_xSe₄(x = 0.100) single crystal from 6.3 to 296 K in magnetic fields up to 1.19×l0⁶A/m. The conductivity decreases rapidly near the Curie temperatureT_c (≈120 K) as the temperature is raised. A large peak in the magnetoresistance is observed near T_c. The Hall effect measurements indicate that the temperature dependence of the conductivity and the magnetoresistance are due mostly to a change in electron mobility. The electron mobility is 1.2 × 10^?2 m²/V · s at 6.3 K, and decreases rapidly near T_c with the rise in temperature. Then it increases slowly from 5.5 × 10^?4 m²/V · s at 160 K to 7.5 × 10^?4 m²/V · s at 241 K. This temperature dependence of the electron mobility can be explained in terms of the spin-disorder scattering which takes into account the exchange interaction between charge carriers and localized magnetic moments.     

Flicker noise of hot electrons in silicon at T = 78 K

From flicker-noise and current-voltage measurements performed on an n⁺nn⁺ silicon planar device at T = 78 K we calculated Hooge's parameter α as a function of the electric field strength, E₀. We found that α(E₀) = α(0)/[1 + (E₀/E_c)²]. E_c is a critical field where the drift velocity equals the sound velocity, indicating the connection of the observed effect with acoustical phonon scattering.     

Sound velocity in single crystals of synthetic opals

The [111] longitudinal sound velocity (v _L) in a single-crystal synthetic opal has been measured at a frequency of 10 MHz in the temperature range 4.2–300 K. At 300 K, v _L=2.1×10⁵ cm/s. The quantity dv _L/v _{300 K}(T) (where v _T,K?v_{300 K}) in the ranges 4.2–200 and 200–300 K behaves in the way typical of amorphous and crystalline solids, respectively.     

Mobility of positrons in silicon

The drift velocity v₊ of positrons in Si has been measured by observing the Doppler shift of the annihilation γ's. The electric field dependence of v₊ yields the positron mobility μ₊: at 80 K μ₊=460±20 cm²V^-1 sec^-1 and at 184 K μ₊=173±15 cm²V^-1 sec^-1.     

Search for neutral heavy leptons produced in Z decays

Weak isosinglet Neutral Heavy Leptons (v _m) have been searched for using data collected by the DELPHI detector corresponding to 3.3 × 10⁶ hadronic Z⁰ decays at LEP1. Four separate searches have been performed, for short-lived v _m production giving monojet or acollinear jet topologies, and for long-lived v _m giving detectable secondary vertices or calorimeter clusters. No indication of the existence of these particles has been found, leading to an upper limit for the branching ratio BR(Z⁰ → v _m ?) of about 1.3 × 10^?6 at 95% confidence level for v _m masses between 3.5 and 50 GeV/c². Outside this range the limit weakens rapidly with the v _m mass. The results are also interpreted in terms of limits for the single production of excited neutrinos.     

On a proposed phenomenological determination of the strength of the dissipative forces in heavy ion reactions

We investigate a mechanism which shows that the experimental determination of the direction of the final spins of the nuclei in deep inelastic collisions yields distinct information on the strength of the radial dissipative forces since, in certain systems, the classical trajectories are accordingly scattered to positive or to negative deflection angles. The radial friction constant marking off both regions from each other amounts to c_r ≈ 2 × 10^?21 MeV fm sec for Ar + Th at E_lab^inc = 388 MeV and to c_r ≈ 1 × 10^?21 MeV fm sec for O + Pb at E_lab^inc = 315 MeV.     

Neutron branching in the reaction 12C + 12C

The cross section for the reaction ¹²C(¹²C, n)²³Mg has been measured in the energy range E_c.m. = 3.54?4.94 MeV by counting the delayed γ-rays from ²³Mg decays (half-life = 11.57 sec), and a theoretical model has been employed to extrapolate the results to threshold (E_c.m = 2.60 MeV). By combining these results with previous measurements of the reactions ¹²C(¹²C, p)²³Na and ¹²C(¹²C, α)²⁰Ne, the neutron branching ratio in the energy interval from threshold to 8 MeV is deduced, and a thermal average is computed that should be valid for use in astrophysical environments characterized by temperatures in the range (0.5–5) × 10⁹ °K. The neutron branching at temperatures appropriate to hydrostatic carbon burning in stars (T ≈ 109 °K) is found to be much smaller than previously estimated.     

Selectively dopedn-AlxGa1−xAs/GaAs heterostructures with high-mobility two-dimensional electron gas for field effect transistors

The transport properties of warm and hot electrons in selectively dopedn-Al _x Ga_1–x As/GaAs heterostructures created by electric fields up to 500 V/cm were studied by Hall effect, conductivity, and Shubnikov-de Haas measurements at lattice temperatures from 4.2 to 300 K. Hall measurements revealed a substantial decrease of electron mobility and also of sheet electron concentration at 77 K with enhanced electric field. The accelerated 2D electrons are partly scattered into the low-mobility first excited (E ₁) subband, and they are partly trapped in immobile states located in the Al_xGa_1–xAs near the interface. Consequently, two differentv(E) characteristics were obtained at 77 K. The 2D electrons populating only the lowest (E ₀) subband exhibit a velocity of v-2×10⁷ cm/s at 500 V/cm, while the averaged velocity due to all electrons reaches a value of v-1.5×10⁷cm/s at 500 V/cm. The analysis of the Shubnikov-de Haas oscillations and Fast Fourier transformation of the data manifested that the 2D electrons are very rapidly accelerated at 4.2 K and achieve electron temperatures much higher than the lattice temperature at electric fields as low as 1 V/cm. The major cooling process for these electrons is scattering into the low-mobilityE ₁ subband.     

Über Elektronendriftbeweglichkeit und Stoßionisierung in KBr-Kristallen bei hohen elektrischen Feldstärken

A swarm of electrons passing a KBr-crystal has been investigated by fast oscilloscopic techniques at high electric fields (3×10⁴ to 4×10⁵ V/cm). From the temporal current shape we determined the electron drift mobilityμ=15±2 cm²/Vsec, the electron life timeτ=2±0.3 × 10^?7 sec and the multiplication factor. From this measurement the ionization coefficientα for electrons was calculated as a function of the applied electric field.     

Cooperative phenomena of random electric dipoles in an amorphous matrix

A ferroelectric phase transition has been observed for the first time in a series of glasses containing WO₆-octahedra. The techniques of thermally stimulated depolarization currents were used to observe the transition from independent dipole behavior to cooperative behavior in this amorphous system as a function of concentration. These measurements yielded the activation energy ΔE=1.2eV, the pre-exponential τ₀=2 × 10^-22sec, and the dipole moment p?=1.3 × 10^?15 esu cm for WO₃ in Li₂B₄O₇. A dipole moment bearing species due to Li₂B₄O₇ was observed with ΔE=0.44eV and pre-exponential τ₀=5 × 10^?8 sec. The depolarization peaks of WO₃ occur in the temperature range 265–275 K depending upon WO₃ concentration and are pressure dependent with an initial slope of 2 × 10^?5K dyne^?1 cm². A model was developed for a possible phase transition associated with a random “pseudo-spin” system in an amorphous matrix.     

CdS/CdTe薄膜太阳电池的深能级瞬态谱和光致发光研究

用深能级瞬态谱和光致发光研究了无背接触层的CdS/CdTe薄膜太阳电池的杂质分布和深能级中心.得到了净掺杂浓度在器件中的分布.确定了两个能级位置分别在E_V+0365 eV和E_V+0282 eV的深中心,它们的浓度分别为167×10¹² cm^-3和386×10¹¹ cm^-2,俘获截面分别为143×10^-14cm²和153×10^-16cm².它们来源于以化学杂质形式存在的Au和（或）Te_Cd^-复合体,或与氩氧气氛下沉积CdTe时的氧原子相关. 关键词： 深能级瞬态谱 光致发光 CdS/CdTe太阳电池     

Effect of interband scattering on kinetic coefficients and estimates of the parameters of the band spectrum of Sb2Te3

It has been shown that uncertainties in the interpretation of experimental data on transport phenomena in Sb₂Te₃ are resolved in the two-band model with the consistent inclusion of the interband hole scattering. The performed calculation is in quantitative agreement with the experimental data in the temperature range from 77 to 400 K for the following parameters of the band spectrum: the effective mass of the density of states of light holes m _d1 ≈ 0.6m ₀ (where m ₀ is the free electron mass), the effective mass of the density of states of heavy holes m _d2 ≈ 1.8m ₀, and the energy gap between nonequivalent extrema of the valence band ΔE _v(T) ≈ 0.15–2.5 × 10^?4 T eV.     

Radiation defects in Si of high purity

Abstract

Radiation defects created by γ-irradiation of Co⁶⁰ and fast neutrons in high purity p-Si (p = 5×10³ to 4 × 10⁴ Ω.cm) and n-Si (p = 4 × 10² to 5 × 10³ Ω.cm) are investigated by measurements of Hall effect, resistivity and minority carrier lifetime. The oxygen concentration in the crystals is in the range of 5 × 10¹⁴ to 5 × 10¹⁵ cm^?3.

It is shown that stable γ-defects at 300 °K are divacancies and complexes of vacancies with donor or acceptor impurities. Divacancies introduced by γ-irradiation are the secondary defects. They become predominant after ‘exhaustion’ of the dopant. When divacancies become the predominant defects the Fermi level occupies its boundary position E_v +0.39 eV in the gap. At low doses (Φ<10¹⁶ photons/cm²) vacancy-impurity complexes and at heavy doses (Φ>10¹⁷ photons/cm²) divacancies play the main role in the recombination process.

In neutron irradiation disordered regions are introduced and the level at E_v +0.35 eV is observed. The Fermi level in both n- and p-Si shifts to the middle of the gap. At the annealing of disordered regions in the interval 200 to 250 °C the level at E_v +0.27 eV appears and Fermi level occupies its boundary position at E_v +0.39 eV. This indicates that divacancies become the predominant defects which can be formed as secondary defects at the destruction of the disordered regions.     

Investigations on field desorption products from silver surfaces by mass spectrometry

Field evaporation of silver and field desorption of silver surface compounds were investigated by analysing positive ions with a mass spectrometer. In particular, the well known adsorption states of oxygen, and further the interactions of H₂O, NH₃, H₂, CO and CH₄ were measured in the field ion mass spectrometer under steady state fields of > 0.1 V/Å with a sensitivity of < 0.1 ions s^?1 and at temperatures between 80 °K and 425 °K. Although oxygen is usually chemisorbed at Ag surfaces, no AgO⁺, AgO⁺₂ or other Ag-O compounds could be detected as positive ions, Ag⁺ and O₂⁺ are the only observed ions at best image fields in oxygen up to fields of field evaporation of Ag⁺(≈ 2.2 V/Å). Even after the actual adsorption of oxygen with zero-field (6 × 10⁵ Langmuir at 10^?3 Torr) at 323 °K and 473 °K and subsequent application of the desorption field at 210°K no silver-oxygen compounds were found in positive ionic form. Small quantities of AgO⁺ and AgO⁺₂ were only formed — besides Ag(H₂O)_x⁺ complexes — if atomic oxygen was supplied by the field induced dissociation of water.Gases which do not adsorb on silver under zero-field conditions (H₂, CO, CH₄, N₂) yield the ions Ag(H₂)_n, Ag(CO)_n⁺, n=1, 2; AgCH₄⁺, AgN₂⁺. The situation with H₂O and NH₃ is more complicated: Molecular ions [Ag(H₂O)_n]⁺·mH₂O, n=1,…, 4, m=1,…, 8 and [Ag(NH₃)_n]⁺·mNH₃, n=1, 2, m=1,…, 6 are found besides Ag⁺.From the temperature and field dependence conclusions are drawn about the mechanisms of evaporation and formation of ionic surface complexes. The activation energies of evaporation of Ag⁺ are found to depend on the square root of the field strength. In general, the generation of surface compounds can be described by field induced reactions rather than usual gas adsorption.     

Der Zerfall des125m Xe,des127m Xe und des127g Xe

The decay of^125m Xe produced by the reaction¹²²Te(α, n)^125m Xe using a target enriched in¹²²Te (95.4%) and the decay of^127m Xe produced by the reaction¹²⁷J(d, 2n)^127m Xe have been investigated: ^125m Xe decays with a half-life ofT _1/2=(56±3) sec by ayy- cascade withE _γ1=(140.4 ±0.5) keV andE _γ2=(110.5 ±0.5) keV. The experimental conversion coefficients yield multipolarities ofE3 for the 140.4 keV isomeric transition and predominantlyM1 for the 110.5 keV-transition. ^127m Xe decays with a half-life ofT _1/2=(71±2) sec. The decay also proceeds by aγγ-cascade with an isomeric E3 transition ofE _γ1=(172.5±0.3) keV and a predominantlyM1 transition ofE _γ2=(124.6±0.3) keV. In the decay of^127g Xe an additional branching of the electron capture to a level at (618.1±0.3) keV was observed. The relative probability forK-captureP _K618/P_K375=0.40 ±0.07 yields a total transition energyQ _EC=(664 ±4)keV. A spin of 1/2⁺ was assigned to the ground state.     

Proton spin relaxation in hexagonal ice

Measurements of the rotating frame proton spin relaxation timeT _1p in hexagonal ice single crystals as a function of temperature ? for various rotating magnetic field strengths reveal the expectedT _1p minimum at the lowest practicable field values. This allows a very precise determination of the proton correlation (? molecular jump) time τ_c and the related activation energy ΔE by means of the theoretical reasoning of relaxation spectroscopy. We find the Arrhenius-law temperature dependenceτ _c=1.99×10^?17exp(0.603/8.61×10^?5 ?)sec, which is in good agreement with our earlier indirect derivation.     

Observation of antideuteron production in electron-positron annihilation at 10 GeV center of mass energy

The production of antideuterons has been observed in electron-positron annihilations at center-of-mass energies around 10 GeV. Antideuterons have been identified unambiguously by their energy loss in the drift chamber, their time-of-flight and the pattern of their energy deposition in the shower counters of the ARGUS detector. The production rate in the momentum range (0.6?1.8) GeV/c is (1.6_?0.7^+1.0) × 10^?5 per hadronic event.     

Observation of the radiative transition ψ → γE(1420)

We have observed a radiative transition from the ψ to a state decaying into K_SK^±π^?, with mass M = 1.44_?0.015^+0.01 GeV/c² and width Γ = 0.05_?0.02^+0.03 GeV/c². We tentatively identify this state as the E(1420). Assuming that this state is an isospin singlet, we have determined the branching fraction product $\text{B(ψ → γ}\text{E}\text{) × B(}\text{E}\text{×}\text{K}\text{K}\text{π) = (3.6 ± 1.4) × 10}{}^{\mathrm{?3}}$.