HFCVD法制备纳米晶体碳化硅薄膜中氢流量对晶粒尺寸的影响

以甲烷、硅烷和氢气为反应气体,采用热丝化学气相沉积（HFCVD）法在单晶硅衬底上沉积纳米晶体碳化硅(SiC)薄膜.通过X射线衍射(XRD)和扫描电子显微镜（SEM）分别对SiC薄膜的晶体结构和表面形貌进行分析.实验发现氢气流量对碳化硅薄膜晶粒尺寸有很大影响,当氢气流量从10SCCM变化到300SCCM时,薄膜晶粒的平均尺寸将由较大的400 nm左右减小到40 nm左右.     

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利用微波电子回旋共振等离子体增强型化学气相沉积(ECR-PECVD)采用一步法直接在K9玻璃上低温沉积制备了多晶硅薄膜.研究了不同实验参数对薄膜沉积的影响,采用X射线衍射(XRD)、拉曼光谱、扫描电子显微镜(SEM)等实验分析方法对不同条件下制备的样品进行了晶体结构和表面形貌分析,并讨论了多晶硅薄膜沉积的最佳条件.实验结果表明,玻璃衬底上多晶硅薄膜呈柱状生长,并有一定厚度的非晶孵化层;较高氢气比例和衬底温度有利于结晶,薄膜的结晶率达到了62％;晶粒团簇的最大尺寸约为500nm.     

在Si(111)上用有机溶胶凝胶甩膜热解法制备(0001)定向的6H-SiC薄膜

在Si(111)衬底上用聚苯乙烯溶胶凝胶甩膜并经950℃真空(10^-3Pa)热解处理法,制备出晶态SiC薄膜.用FTIR,XRD,TEM,RamanXPS等方法研究了SiC薄膜的晶体结构、微结构、组成以及各元素的化学态等性质.结果表明制得的是沿(0001)高度择优取向的晶态6H-SiC薄膜.膜中SiC晶粒沿c轴柱状生长,其最大尺寸约150nm,膜厚约为0.3μm,SiC中的Si/C比约为1.表层有少许污染C(CH和CO)和少量O(Si₂O₃,CO态氧和吸附氧).从对比实验可知,在热解时将甩膜的Si片与另一空白Si片面面相贴可明显增加SiC的生成量. 关键词： 碳化硅 薄膜 溶胶凝胶     

(0001)SiC衬底MgB_2超薄膜的制备和性质研究

利用混合物理化学气相沉积法(Hybrid physical-chemical vapor deposition简称为(HPCVD)在(0001)SiC衬底上制备了干净的MgB2超导超薄膜.在背景气体、压强、载气氢气流量以及B2H6的流量一定的情况下,改变沉积时间,制得一系列MgB2超薄膜样品。通过观察样品的表面形貌变化探究了MgB2超薄膜的生长过程.该系列超薄膜的生长遵循Volmer-Weber岛状生长模式且沿c轴外延生长.以20nm超薄膜作为例子,可知其表面连接性良好,超导转变温度Tc(0)≈38.5K,临界电流密度Jc≈0.82×107 A/cm2,表明了利用HPCVD在(0001)SiC衬底上制备的MgB2超薄膜有很好的性能.这预示其在超导电子器件上具有广阔的应用前景.     

低压下气流对激光沉积纳米硅晶化及尺寸的影响

纳米硅具有明显的光致发光效应和量子尺寸效应,广泛的应用在现代电子工业和太阳能光伏工业中.尺寸影响着纳米硅的实际用途,因此制备尺寸可控的纳米硅晶粒具有很重要的实际意义.本文采用脉冲激光沉积(PLD)技术,在烧蚀点水平方向、距靶2 cm处引入一束流量为5 sccm的氩(Ar)气流,在0.01-0.5 Pa的Ar气压下烧蚀高阻抗单晶硅(Si)靶.在管口正下方1 cm处水平放置衬底来沉积纳米Si薄膜;并用同一装置,在0.08 Pa的Ar气压下分别引入流量为0,2.5,5,7.5,10 sccm的Ar气流沉积纳米Si薄膜.利用原子力显微镜(AFM)、X射线衍射(XRD)、Raman散射对样品表面形貌和微观结构进行分析表征.结果表明:不引入气流时出现纳米Si晶粒的阈值气压是0.1Pa,引入气流后出现纳米Si晶粒的阈值气压为0.05 Pa.晶粒尺寸随着气流流量的增大而减小.     

氢气流量对混合物理化学气相沉积法制备MgB_2超薄膜的影响

用混合物理化学气相沉积法(Hybrid physical-chemical vapor deposition简称为HPCVD)制备了MgB2超薄膜.在背景气体压强、B2H6的流量和成膜时间等条件一定的情况下,当氢气的流量从200到400sccm范围内变化时,观察了其对成膜的影响.结果显示,随氢气流量增大,膜表面粗糙度增大,同时膜面的连接性变好,伴随着样品的超导转变温度得到提高.对于平均厚度是10nm和15nm的样品,氢气流量分别是200sccm和300sccm时,Tc分别是26K和33K与28K和37K.     

氢气引入对宽光谱Mg和Ga共掺杂ZnO透明导电薄膜的特性影响

为适应宽光谱高效率硅基薄膜太阳电池的应用需求,本文尝试采用直流磁控溅射技术在553 K衬底温度下生长氢化Mg和Ga共掺杂ZnO(HMGZO)透明导电氧化物(TCO)薄膜.通过对薄膜微观结构、表面形貌、电学以及光学性能的测试和分析,详细地研究了氢气(H2)流量(0—16.0 sccm)对HMGZO薄膜结晶特性及光电性能的影响.实验结果表明:生长获得的HMGZO薄膜均为六角纤锌矿结构的多晶薄膜,择优取向为(002)晶面生长方向.薄膜的生长速率随着氢气流量的增加呈现逐渐减小趋势,主要归因于溅射产额的减小.适当的氢气引入会引起晶粒尺寸的增加.随着氢气流量由0增加至4.0 sccm,ZnO薄膜电阻率从177?·cm急剧减小至7.2×10-3?·cm,主要是由于H施主的引入显著地增加了载流子浓度;然而进一步增加氢气流量(4.0—16.0 sccm)造成电阻率的轻微增加,主要归因于载流子浓度的减小以及过多氢杂质引入造成杂质散射的增加.所有生长获得的HMGZO薄膜平均光学透过率在波长λ～320—1100 nm范围内可达87%以上.由于Mg的作用及Burstein-Moss效应的影响造成了带隙展宽,带隙变化范围～3.49—3.70 eV,其中最大光学带隙Eg可达～3.70 eV.     

基片温度对SiNx薄膜结晶状态及机械性能的影响

利用微波电子回旋共振增强磁控反应溅射法在不同基片温度下制备无氢SiNx薄膜.通过傅里叶变换红外光谱、透射电子显微镜、台阶仪、纳米硬度仪等表征技术,研究了基片温度对SiNx薄膜结晶状态、晶粒尺寸、晶体取向等结晶性能以及薄膜的生长速率、硬度等机械性能的影响,并探讨了薄膜结晶性能与机械性能之间的关系.研究结果表明,在基片温度低于300℃时制备的SiNx薄膜以非晶状态存在,硬度值仅为18 GPa左右;基片温度在320-620℃范围内,SiNx薄膜中出现纳米晶粒,且晶粒尺寸随沉积温度的增加而增加,在沉积温度为620℃时达到最大,为20±1.5 nm;当沉积温度为700℃时,SiN<,x>薄膜的晶粒尺寸突然减小,但由于此时晶粒密度为最大,因此薄膜硬度达到最大值(36.7 GPa).     

强磁场对不同厚度Fe-Ni纳米多晶薄膜的生长过程及磁性能的影响

有无6 T强磁场条件下, 利用分子束气相沉积方法制备了21 nm和235 nm厚的Fe-Ni纳米多晶薄膜. 研究发现, 0 T时, 21 nm厚的薄膜是晶粒堆叠而成, 晶粒尺寸为6–7 nm; 6 T时, 21 nm厚的薄膜首先在基片表面形成了晶粒相互连接的5 nm平坦层, 晶粒沿基片表面拉长, 随后以6–7 nm尺寸的晶粒堆叠而成; 0 T时, 235 nm厚度的薄膜生长初期平均晶粒尺寸为3.6 nm, 生长中期平均晶粒尺寸为5.6 nm, 生长末期薄膜近似柱状方式生长, 晶粒沿生长方向拉长; 6 T时, 235 nm厚度的薄膜在基片表面也形成了晶粒相互连接的5 nm平坦层, 晶粒沿基片表面拉长, 随后以尺寸均匀的6.1 nm晶粒堆叠而成; 而且, 6 T强磁场使得不同厚度薄膜的面外与面内矫顽力都降低.     

金属有机化学气相沉积法生长条件对AlN薄膜面内晶粒尺寸的影响

研究了金属有机化学气相沉积设备生长条件对AlN 薄膜质量的影响. 应用Williamson-Hall方法测试并分析了不同氮化时间、AlN缓冲层生长时间、 载气流量生长参数对AlN薄膜的面内晶粒尺寸的影响. 实验结果表明, 随着氮化时间减小, 缓冲层生长时间增加, 载气流量减少, AlN薄膜的侧向生长和岛的合并能力增强, 面内晶粒尺寸增大, 从而晶体质量也变好. 关键词： AlN Williamson-Hall 面内晶粒尺寸     

碳化硅薄膜脉冲激光晶化特性研究

采用XeCl准分子激光对非晶碳化硅(a-SiC)薄膜的脉冲激光晶化特性进行了研究.通过原子力显微镜（AFM）和Raman光谱技术对退火前后薄膜样品的形貌、结构及物相特性进行了分析.结果表明，选用合适的激光能量采用激光退火技术能够实现a-SiC薄膜的纳米晶化.退火薄膜中的纳米颗粒大小随着激光能量密度的增加而增大；Raman谱分析结果显示了退火后的薄膜的晶态结构特性并给出了伴随退火过程存在的物相分凝现象.根据以上结果并结合激光退火特性，对a-SiC的脉冲激光晶化机理进行了讨论. 关键词： 激光退火 晶化 碳化硅     

Effects of substrate on surface morphology, crystallinity, and photoluminescence properties of sputtered ZnO nano films

Effects of substrate on crystallinity, surface morphology, and luminescence properties of radio frequency sputtered zinc oxide (ZnO) thin films were investigated. A variety of materials such as Si (100), Si (111), Al₂O₃, quartz, and silicon carbide (SiC) wafers were examined as substrates for deposition of ZnO thin films. The results showed smooth and uniform growth of c-axis orientation films. The thickness of the layers was about 50 nm. The average grain sizes of films were about 10, 13, and 12 nm for Si (111), quartz, and SiC samples, respectively. The deposited film on Al₂O₃ showed the largest grain size, about 500 nm. Grazing incidence x-ray diffraction patterns of the samples revealed that sputtered layers on Al₂O₃ and quartz had better crystallinity with higher peak at (002) orientation compared to Si and SiC substrates. Moreover, the Al₂O₃ sample exhibited a weak peak at position of (100) planes of ZnO too. The photoluminescence spectra of the samples showed a typical luminescence behavior with a broad UV band, including a main peak at around 388 nm and a weak shoulder peak at around 381 nm, corresponding with bound excitonic recombination and free excitonic recombination, respectively. The luminescence peak revealed that the intensity of UV emission is not necessarily dependent on the grain sizes and the micro-structural quality of ZnO films.     

Preparation and characterizations of amorphous nanostructured SiC thin films by low energy pulsed laser deposition

Amorphous silicon carbide (SiC) thin films were deposited on silicon substrates by pulsed laser ablation at room temperature. Thicknesses and surface morphology of the thin films were characterized using optical profilers, atomic force and field emission scanning electron microscopy. Nanohardnes, modulus and scratch resistance properties were determined using XP nanoindenter. The results show that crack free, smooth and nanostructured thin films can be deposited using low laser energy densities.     

Mechanical properties of sol-gel derived lead zirconate titanate thin films by nanoindentation

Lead zirconate titanate (PZT) thin films are deposited on platinized silicon substrate by sol-gel process. The crystal structure and surface morphology of PZT thin films are characterized by X-ray diffraction and atomic force microscopy. Depth-sensing nanoindentation system is used to measure mechanical characteristics of PZT thin films. X-ray diffraction analyses confirm the single-phase perovskite structures of all PZT thin films. Nanoindentation measurements reveal that the indentation modulus and hardness of PZT thin films are related with the grain size and crystalline orientation. The increases of the indentation modulus and hardness with grain size are observed, indicating the reverse Hall-Petch effect. Furthermore, the indentation modulus of (1 1 1)-oriented PZT thin film is higher than those of (1 0 0)- and random-oriented films. The consistency between experimental data and numerical results of the effective indentation moduli for fiber-textured PZT thin films using Voigt-Reuss-Hill model is obtained.     

Silicon grain arrays prepared using a pattern crystallization technique of pulsed-excimer laser irradiation

Silicon grain arrays were prepared using a pattern crystallization technique of pulsed KrF excimer laser irradiation. The precursor material was hydrogenated amorphous silicon (a-Si:H) thin films deposited on single crystal Si wafers by plasma-enhanced chemical vapor deposition. It was shown that Si grains with a uniform size and a well-defined periodicity embedded in the a-Si:H matrix were obtained by this simple technique. The grain size was less than 2 μm. Relativly strong photo-luminescence with two peaks at 720 and 750 nm was observed at room temperature. We expect to reduce Si grain sizes by optimizing the growth conditions of a-Si:H thin films and controlling the temperature distribution in the film during laser irradiation. Received: 21 November 2000 / Accepted: 12 December 2000 / Published online: 9 February 2001     

Electric-field mediated nickel-induced nanocrystallization of?amorphous silicon thin films in the complete absence of external heating

DC electric-field mediated nanocrystallization of thermally evaporated silicon thin films with nickel as seed/cap layer has been attempted in complete absence of any external heat input. When 60 nm Si thin film coated onto 5 nm Ni thin film was treated by a direct current (DC) electric field (up to 3.3 kV/cm up to 5 minutes) after the deposition, amorphous silicon thin films became nanocrystalline (6–10 nm). Silicon nanograins (average diameter 90 nm) grow to larger sizes (average diameter 240 nm) with sharpening of grain size distribution. Huge grain growth (4-fold increase) has been observed when nickel was used as cap layer (5 nm Ni/60 nm Si). XRD data show the signature of nickel silicide formation on the surface in nickel cap layer case. Field treatment has changed the optical absorption edge (shifts left in nm units) and the refractive index of silicon thin film when nickel was used as under layer, and an almost negligible effect on the optical properties has been observed when nickel was used as cap layer.     

Growth kinetics and polysilicon formation by aluminium-induced crystallization on glass-ceramic substrates

In this work, we present extended structural properties of poly-Si thin films fabricated by aluminium-induced crystallization (AIC) of amorphous silicon (a-Si) on high-temperature glass-ceramic substrates. The silicon nucleation kinetics on glass-ceramic substrates was investigated by optical microscopy. The crystalline quality of the films was studied by micro-Raman spectroscopy as a function of exchange annealing conditions. By means of electron backscattering diffraction (EBSD), we have analyzed the effect of thermal annealing on silicon grain size and its distribution, intra- and inter-grains defects, and on the grains preferential crystallographic orientation. The optimal thermal annealing condition, allowing 100% crystallized polysilicon large grains with an average grain size of 26 μm and 〈100〉 oriented, acquired a thermal budget of 475°C and 8 h.     

Quantum states in fabricating poly-Si films

The quantum states are presented in these processions of fabricating poly-Si films. Amorphous silicon films prepared by PECVD has been crystallized by conventional furnace annealing (FA) and rapid thermal annealing (RTA), respectively. It is found that the thin films grain size present quantum states with the increasing of the gas flow ratios of SiH₄, H₂ mixture, substrate temperatures, frequency power, annealing temperature and time.     

Nanostructured core-shell Ni deposition on SiC particles by alkaline electroless coating

In this study, core-shell nanostructured nickel formation on silicon carbide (SiC) ceramic powders was achieved through the electroless deposition method using alkaline solutions. To produce a nano core-shell Ni deposition on the SiC surfaces, process parameters such as pH values, the type of reducer material, deposition temperature, stirring rate and activation procedure among others were determined. Full coverage of core-shell nickel structures on SiC surfaces was achieved with a grain size of between 100 and 300 nm, which was approximately the same deposition thickness on the SiC surfaces. The surface morphology of the coated SiC particles showed a homogenous distribution of nanostructured nickel grains characterized by scanning electron microscopy and X-ray diffraction techniques. The nanostructures of the crystalline Ni coatings were observed to be attractive for achieving both good bonding and dense structure. The thin core shell-structure of Ni on the SiC surfaces was assessed as a beneficial reinforcement for possible metal matrix composite manufacturing.