Ag改性纳米ZnO薄膜及光催化活性

采用溶胶-凝胶法和光还原沉积贵金属法结合制备出Ag改性的纳米ZnO薄膜。利用FESEM、XPS、ESR、UV-Vis分析了纳米Ag-ZnO薄膜的表面形貌、表面组成和光谱特征。FESEM分析表明银在纳米ZnO薄膜表面形成原子簇而没有形成均匀覆盖层。XPS分析表明负载在纳米ZnO薄膜表面的银以Ag⁰形式存在; 相对于纳米ZnO薄膜, 纳米Ag-ZnO薄膜中晶格氧的含量有所下降,而表面羟基氧和吸附氧的含量显著增加。纳米Ag-ZnO薄膜的ESR峰强比纳米ZnO薄膜大,表明纳米Ag-ZnO薄膜中束缚单电子的氧空位的浓度高于纳米ZnO薄膜。UV-Vis分析纳米Ag-ZnO薄膜的紫外可见吸收光谱可能是纳米银粒子与纳米ZnO薄膜共同作用的结果。以甲基橙为模拟污染物,考察了纳米Ag-ZnO薄膜的光催化活性以及银沉积量对催化剂活性的影响。光催化降解结果表明,银的沉积量为0.018 2 mg·cm^-2的纳米Ag-ZnO薄膜的光催化活性最高,在紫外光照射3 h后甲基橙降解率约为78%,而纳米ZnO薄膜约为62%。     

TiO2/ZnO薄膜电极中光生电子的传输及其在太阳电池中的应用

制备了TiO2纳米颗粒和ZnO纳米棒混合的多孔薄膜电极, 利用瞬态光电压技术研究了染料敏化TiO2/ZnO薄膜中光生载流子的传输特性. 实验结果表明, ZnO纳米棒增加了薄膜中自由电子扩散速率, 减小了复合几率, 改善了能量转换效率.     

P3HT/CdS/TiO2/ZnO一维有序核壳式纳米棒阵列的构制及其在杂化太阳电池中的应用研究

采用恒电位法在铟锡氧化物导电玻璃(ITO)上制备了高度有序一维ZnO纳米棒阵列,将ZnO纳米棒阵列在TiO2溶胶中采用提拉法制备出了一维TiO2/ZnO核壳式纳米棒阵列.在一维TiO2/ZnO核壳式纳米棒阵列上电沉积CdS纳米晶得到一维CdS/TiO2/ZnO核壳式纳米棒阵列,然后在一维CdS/TiO2/ZnO核壳式纳米棒阵列上电沉积聚3-己基噻吩(P3HT)薄膜得到P3HT/CdS/TiO2/ZnO核壳式纳米结构薄膜.以该纳米结构薄膜电极为光阳极制备出新型纳米结构杂化太阳电池,研究了该类电池的光电转换性能,初步探讨了该类电池的工作机理.     

化学溶液沉积法制备单分散氧化锌纳米棒阵列

在由溶胶凝胶法制备的纳米ZnO薄膜基底上, 采用化学溶液沉积法制备了单分散、高度取向的ZnO纳米棒阵列膜. 通过控制纳米ZnO薄膜的制备工艺, 可以调节氧化锌纳米棒的直径. 利用FESEM, TEM, HRTEM, SAED和XRD表征了氧化锌纳米棒阵列的形貌和晶体结构. ZnO纳米棒的室温PL谱具有很高的紫外带边发射峰, 在可见光波段无发射峰, 表明该方法制备的ZnO纳米棒晶体结构完整, 晶体中O空位的浓度很低.     

纳米ZnO/聚醋酸乙烯酯复合薄膜的光催化性能研究

采用溶胶-凝胶和浸渍-提拉而后煅烧的方法得到了在可见光作用下具有光催化性能的纳米ZnO/聚醋酸乙烯酯(PVAc)复合薄膜.通过正交设计实验,研究了PVAc的浓度、煅烧温度、煅烧时间、复合薄膜层数和附加ZnO膜层数等工艺因素对光催化性能的影响,并通过SEM,XRD和FT-IR对其进行了分析与表征.在室内普通照明用白炽灯作用下,以甲基橙溶液为催化对象,PVAc含量10%的、在250℃煅烧30min所得到的纳米ZnO/PVAe复合薄膜的光催化性能的实验结果表明,复合薄膜对甲基橙降解率达60%,而使用250℃煅烧30min所得到的纳米ZnO 4层薄膜或PVAc 4层薄膜催化的甲基橙溶液的浓度变化很小.     

纳米ZnO薄膜的制备及其可见光催化降解甲基橙

采用溶胶-凝胶方法制备ZnO透明溶胶, 在铝箔上涂膜后经500 ℃处理制得具有可见光响应的纳米ZnO薄膜光催化剂. 以甲基橙模拟有机污染物, 在可见光下研究了薄膜的降解性能, 结果表明, 用一片有效面积为200 cm2的ZnO/Al薄膜作为催化剂, 甲基橙的降解率达到96.3％, 比ZnO负载在玻璃上制得的ZnO/glass薄膜催化剂活性高得多. 采用扫描电镜与原子力显微镜对ZnO/Al薄膜制备条件进行了表征, 结果发现多孔ZnO/Al薄膜比致密ZnO/Al薄膜具有更高的活性, 实验制备的具有高活性的ZnO/Al薄膜颗粒平均直径为52.2 nm. 采用本方法制备的ZnO/Al薄膜是一种具有应用前景的, 能在可见光下降解有机物的有效光催化剂.     

硫化氧化两步法提高(110)取向ZnO纳米片比表面及其光电极应用

以硫代乙酰胺为硫源, 通过一种较温和的溶剂热法先将生长于氟掺杂的SnO₂ (FTO)导电玻璃上的ZnO纳米片硫化, 再将其在空气中高温焙烧氧化,利用ZnO/ZnS晶格的膨胀收缩效应使ZnO纳米片表面粗糙化,达到提高其比表面积的目的. 系统研究了该硫化氧化两步法中ZnO纳米片、硫化后的ZnS纳米片、硫化氧化后的ZnO纳米片薄膜的形貌、物相、比表面积及孔径分布的变化. 并将硫化氧化前后两种ZnO纳米片阵列薄膜制成染料敏化太阳电池的光电极, 分别对电池的电流密度-电压(J-V)特性进行了表征. 实验结果表明, 经过硫化氧化后的ZnO纳米片的比表面积大约是未经该处理的ZnO纳米片的2倍, 同时前者的太阳电池光电转换效率(IPCE)相对于后者提高33%.     

纳米结构ZnO在TiO_2薄膜上的电化学沉积及其表征

在三电极体系中,以硝酸锌水溶液作为电解液,采用阴极还原电沉积法成功实现了一维纳米结构ZnO阵列在TiO2纳米粒子/ITO导电玻璃薄膜基底上的沉积,并通过XRD、SEM、EDS和PL光谱等方法对样品进行了表征.重点研究了薄膜基底、电解液浓度、沉积时间、六次亚甲基四胺(HMT)的引入对ZnO沉积及其发光性质的影响.结果显示:与ITO玻璃基底相比,ZnO更易于在TiO2纳米粒子薄膜上实现电化学沉积.ZnO属于六方晶系的铅锌矿结构,并且沿着c-轴方向表现出明显的择优化生长,以形成垂直于基底的ZnO纳米棒阵列.延长沉积时间、增加电解液浓度和引入一定量的HMT等均对ZnO的生长有促进作用,进而使其纳米棒的结晶度和取向程度提高,进而解释了所得的薄膜分别约在375和520nm处表现出ZnO的强而窄的带边紫外光发射峰和弱而宽的表面态绿光发射带.     

Au/ZnO/TiO_2复合薄膜的制备及光电转换性质

以含有Au和ZnO纳米颗粒的氢氧化钛溶胶作为成膜液,通过浸渍-提拉及灼烧处理在导电玻璃表面制备Au/ZnO/TiO2复合薄膜.利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)等方法对所得产物进行表征.结果表明,Au和ZnO纳米颗粒均匀地分布在多孔TiO2薄膜上,通过TiO2、ZnO和Au三组分的协同效应促进了光吸收和电荷分离,使Au/ZnO/TiO2复合薄膜具有较好的光电转换性质,可用作太阳能电池材料.     

P3HT修饰一维有序壳核式CdS/ZnO纳米棒阵列复合膜的光电化学性能

采用电化学方法在铟锡氧化物(ITO)导电玻璃上制备了高度有序的ZnO纳米棒阵列, 在ZnO纳米棒阵列上先后电化学沉积CdS纳米晶膜及聚3-己基噻吩(P3HT)薄膜得到P3HT修饰的一维有序壳核式CdS/ZnO纳米阵列结构, 并通过扫描电镜(SEM)、透射电镜(TEM)、X射线衍射(XRD)、能量散射X射线(EDX)等表征手段证实了该结构的形成. 以此纳米结构薄膜为光阳极组装新型半导体敏化太阳电池, 研究了CdS纳米晶膜的厚度和P3HT薄膜的沉积对电池光伏性能的影响, 初步探讨了电荷在电池结构中的传输机理, 结果表明, CdS纳米晶膜和P3HT薄膜的沉积有效地拓宽了光阳极的光吸收范围, 实验中电池的光电转换效率最高达到1.08%.     

Biomineralization‐Inspired Preparation of Zinc Hydroxide Carbonate/Polymer Hybrids and Their Conversion into Zinc Oxide Thin‐Film Photocatalysts

The development of ZnO thin films has been achieved through the conversion of zinc hydroxide carbonate thin‐film crystals. Crystallization of this compound is induced by a biomineralization‐inspired method with polymer‐stabilized amorphous precursors. The crystals grow radially on polymer matrices, leading to the formation of zinc hydroxide carbonate/polymer thin‐film hybrids that fully cover the substrate. These hybrids are converted into ZnO and retain their thin‐film morphologies. The resultant ZnO thin films exhibit a preferential crystallographic orientation that is attributed to the alignment of zinc hydroxide carbonate crystals before conversion. In addition, a photocatalytic function of the ZnO thin films has been demonstrated by analyzing the oxidation reaction of 2‐propanol. The biomineralization‐inspired approach reported herein is a promising way to develop ZnO materials with controlled morphologies and structures for photocatalytic applications.     

Preparation and optical–electrical properties of Al-doped ZnO films

Among the various semiconducting metal oxide materials, ZnO thin films are highly attractive in the development of materials area. In this paper, Al-doped ZnO thin films were prepared by sol–gel dipping and drawing technology and their composition, structure and optical–electrical properties were investigated. XRD results shows that the Al-doped ZnO thin film is of polycrystalline hexagonal wurtzite structure, and the (002) face of the thin film has the strongest orientation at the annealing temperature of 550 °C. The surface resistance of Al-doped ZnO thin film firstly drops and then increases with the increase in annealing temperature. Al doping concentration is also an important factor for improving the conductivity of modified ZnO thin films, and the surface resistance has the tendency to drop at first and then to increase when the Al concentration is increasing. The surface resistance of modified ZnO thin films drops to the lowest point of 139 KΩ sq^?1 when the Al concentration is 1.6 at% and the annealing temperature is 500 °C. The light transmission measurements show that the doping concentration has little influence on light transmittance. The transmittance at the visible region of films is all over 80 %, and the highest value is up to 91 %.     

旋涂水溶液前驱体制备氧化锌薄膜及其性质

通过旋涂法, 采用Zn(OAc)2·2H2O和聚环氧乙烷(PEO)的水溶液为前驱体在不同的热处理温度下制备了ZnO薄膜. PEO的加入增加了溶液的成膜性, 其较低的热分解温度有利于制得纯净的ZnO薄膜. 文中考察了在不同热处理温度下制备的ZnO薄膜的形貌、结晶性、带隙(Eg)以及电导性. 原子力显微镜(AFM)测试表明在热处理温度为400、450和500 ℃制备的ZnO薄膜的粗糙度均方根值分别为3.3、2.7和3.6 nm. 采用透射电子显微镜(TEM)测试发现ZnO薄膜中含有大量纳晶粒子. 通过测试ZnO薄膜的UV-Vis吸收光谱, 根据薄膜位于373 nm处的吸收带边计算得到ZnO的带隙为3.3 eV. 通过对薄膜的电流-电压(I-V)曲线的测试计算得到在热处理温度为400、450和500 ℃制备的ZnO薄膜的电阻率分别为3.3×109、2.7×109和6.6×109 Ω·cm. 450 ℃时制备的ZnO薄膜的电阻率最小, 主要是由于较高的热处理温度有利于提高薄膜的纯度、密度和吸附氧. 而纯度较高、密度较大的薄膜电阻率比较小; 吸附氧含量增加, 晶界势垒增大, 电阻率增大. 因此在纯度和吸附氧的双重作用下450 ℃时制备的ZnO薄膜的电阻率最小, 而500 ℃时制备的ZnO薄膜的电阻率最大.     

氧偏压对ZnO薄膜结构的影响

采用磁控溅射方法在ITO玻璃上成功制备了具有良好c轴取向的ZnO薄膜．并研究了氧偏压对ZnO薄膜结构的影响、研究发现：当氧偏压为60％时,薄膜的结晶性最好．当氧偏压继续升高时将导致薄膜的结晶性变差,晶粒尺寸变小,晶界增多,薄膜表面粗糙度增加,对光的散射和吸收作用增强,从而导致光的透过率降低．     

Optical and structural characteristics of yttrium doped ZnO films using sol–gel technology

Yttrium-doped ZnO gel was spin-coated on the SiO₂/Si substrate. The as-prepared ZnO:Y (YZO) thin films then underwent a rapid thermal annealing (RTA) process conducted at various temperatures. The structural and photoluminescence characteristics of the YZO films were discussed thereafter. Our results indicated that the grain size of YZO thin films being treated with various annealing temperatures became smaller as compared to the ones without being doped with yttrium. Furthermore, unlike other ZnO films, the grains of YZO thin films appeared to separate from one another rather than aggregating together as both types of the films were annealed under the same environment. The photoluminescence characteristic measured showed that the UV emission was the only radiation obtained. However, the UV emission intensity of YZO thin film was much stronger than that of the ZnO thin film after annealing them with the same condition. It was also found that the intensity increased with an increase in the annealing temperature, which was caused by the exciton generated and the texture surface of the YZO thin film.     

Forming extremely smooth ZnO thin film on silicon substrates for growth of large and well-aligned ZnO rods with the hydrothermal method

Sol–gel zinc oxide (ZnO) thin films generally have non-uniform stripes. After annealing at high temperatures, these thin films are rough and granular. When ZnO rods are grown on such rough and non-uniform surface with the hydrothermal method, collimation, crystalline structure, and defect density are very poor. Here we explore a method to solve this problem. The ZnO thin film is first coated with an Au layer to prohibit the vertical extension of crystallization during the annealing period. As a result, the surface morphology of ZnO thin film is very flat and uniform after annealing. Afterwards, the ZnO rods are grown on the flat and uniform thin film, which gives rise to ZnO rods with very good collimation and crystalline structure. The extremely flat ZnO thin film even enables the fabrication of patterned ZnO rod arrays with regular shapes through lithography.     

Influence of rapid thermal annealing on structure and interfacial characteristic of ZnO thin films

Highly C‐axis oriented ZnO thin film was manufactured by radio‐frequency magnetron sputtering technique on Si (111) substrate. The main objective was to study the influence of rapid thermal annealing (RTA) temperature on the structure and interfacial characteristic of ZnO thin films. X‐ray diffraction results showed that the ZnO thin films annealed at 600 °C by RTA technique had a perfect C‐axis preferred orientation compared to the other ZnO thin films, and the full width at half maximum of ZnO (002) rocking curve measurements indicted that the RTA‐annealed ZnO thin films possessed better crystal structure. Atom force microscopy displayed that the grain size of RTA‐annealed ZnO thin films was fine and uniform compared with the as‐deposited ZnO thin films, although the grains grew in RTA process and the root meant square roughness was smaller than that of as‐deposited films. High‐resolution transmission electron microscopy showed that there was an obvious amorphous layer between ZnO thin films and Si substrate, but the RTA‐annealed ZnO thin films exhibited larger and denser columnar structure and a preferred orientation with highly c axis perpendicular to the amorphous layer. Copyright © 2012 John Wiley & Sons, Ltd.     

Preparation of nitrogen doped zinc oxide nanoparticles and thin films by colloidal route and low temperature nitridation process

Nitrogen doped zinc oxide (ZnO) nanoparticles have been synthesized using a colloidal route and low temperature nitridation process. Based on these results, 200 nm thick transparent ZnO thin films have been prepared by dip-coating on SiO₂ substrate from a ZnO colloidal solution. Zinc peroxide (ZnO₂) thin film was then obtained after the chemical conversion of a ZnO colloidal thin film by H₂O₂ solution. Finally, a nitrogen doped ZnO nanocrystalline thin film (ZnO:N) was obtained by ammonolysis at 250 °C. All the films have been characterized by scanning electron microscopy, X-ray diffraction, X-Ray photoelectron spectroscopy and UV–Visible transmittance spectroscopy.     

The effects of oxygen concentration on ultraviolet luminescence of ZnO films by sol–gel technology and annealing

ZnO thin films were successfully deposited on SiO₂/Si substrate using the sol–gel technique and annealed in various annealing atmospheres at 900 °C by rapid thermal annealing (RTA). X-ray diffraction revealed the (002) texture of ZnO thin films. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) showed that the grains of the ZnO thin film were enlarged and its surface was smoothed upon annealing in oxygen. PL measurement revealed two ultraviolet (UV) luminescence bands at 375 and 380 nm. The intensity of the emission peak at 380 nm became stronger as the concentration of oxygen in the annealing atmosphere increased. The X-ray photoelectron spectrum (XPS) demonstrated that a more stoichiometric ZnO thin film was obtained upon annealing in oxygen and more excitons were generated from the radiative recombination carriers consistently. Additionally, the UV intensity increased with the thickness of ZnO thin film.