Electrically tunable resonant terahertz transmission in subwavelength hole arrays

An actively enhanced resonant transmission in a plasmonic array of subwavelength holes is demonstrated by use of terahertz time-domain spectroscopy. By connecting this two-dimensional element into an electrical circuit, tunable resonance enhancement is observed in arrays made from good and relatively poor metals. The tunable feature is attributed to the nonlinear electric response of the periodic hole array film, which is confirmed by its voltage–current behavior. This finding could lead to a unique route to active plasmonic devices, such as tunable filters, spatial modulators, and integrated terahertz optoelectronic components.     

High-power terahertz pulse sensor with overmoded structure

Based on the hot electron effect in a semiconductor, an overmoded resistive sensor for 0.3-0.4 THz band is investi-gated. The distribution of electromagnetic field components, voltage standing wave ratio （VSWR）, and the average electric field in the silicon block are obtained by using the three-dimensional finite-difference time-domain （FDTD） method. By adjusting several factors （such as the length, width, height and specific resistance of the silicon block） a novel sensor with optimal structural parameters that can be used as a power measurement device for high power terahertz pulse directly is proposed. The results show that the sensor has a relative sensitivity of about 0.24 kW 1, with a fluctuation of relative sensitivity of no more than ±22%, and the maximum of VSWR is 2.74 for 0.3-0.4 THz band.     

Intraband Dynamics and Terahertz Emission in Biased GaAs/In0.53Ga0.47As Semiconductor Superlattices

Using an excitonic basis, we investigate the intraband polarization, optical absorption spectra, and terahertz emission of semiconductor superlattice with the density matrix theory. The excitonic Bloch oscillation is driven by the dc and ac electric fields. The slow variation in the intraband polarization depends on the ac electric field frequency. The intraband polarization increases when the ac electric field frequency is below the Bloch frequency. When the ac electric field frequency is above the Bloch frequency, the intraband polarization downwards and its intensity decreases. The satellite structures in the optical absorption spectra are presented. Due to excitonic dynamic localization, the emission lines of terahertz shift in different ac electric field and dc electric field.     

The effect of an optical pump on the absorption coefficient of magnesium-doped near-stoichiometric lithium niobate in terahertz range

The absorption coefficient of magnesium-doped near-stoichiometric lithium niobate crystal is measured by terahertz time-domain spectroscopy in a frequency range of 0.2 THz~0.9 THz at room temperature. The absorption coefficient is modulated by external optical pump fields. Experimental results show that the absorption coefficient of near-SLN：Mg crystal is approximately in a range of 22 cm- 1_35 cm- 1 in a frequency range of 0.2 THz-0.9 THz and tunable up to nearly 15%. Further theoretical analysis reveals that the variation of absorption coefficient is related to the number of light-induced carriers, domain reversal process, and OH- absorption in this crystal.     

Power dependence of terahertz carrier frequency in a plasma-based two-color generation process

We conduct a frequency spectrum experiment to investigate terahertz（THz） emissions from laser-induced air plasma under different laser incident powers. The frequency spectra are measured using both air-biased-coherent detection and a Michelson interferometer. The red-shift of the THz pulse carrier frequency is observed as a response to increased pump power. These phenomena are related to plasma collisions and can be explained by the plasma collision model. Based on these findings, it is apparent that the tuning of the THz carrier frequency can be achieved through regulation of the pump beam.     

Terahertz time-domain spectroscopy of a simulated pore structure to probe particle size and porosity of porous rock

The particle sizes and porosities of simulated pore structures are probed by terahertz time-domain spectroscopy.A double-peak time-domain spectrum phenomenon is observed when the terahertz（THz） pulses illuminated a pore and a particle. The amplitudes of the two peaks depend strongly and monotonically on the particle size and porosity. A model is used to study the phenomenon, and the computational results agreed with the experimental measurements. These measurements indicate the terahertz spectroscopic behaviors of pores and particles, suggesting that terahertz spectroscopy can be used as a noncontact probe of porosity.     

Strong and broadband terahertz absorber using Si02-based metamaterial structure

We design and experimentally demonstrate a broadband metamaterial absorber in the terahertz （THz） band based on a periodic array of aluminum （A1） squares with two different sizes. A thin silicon dioxide （SiO2） film rather than a conventional polyimide （PI） layer is used as a dielectric spacer to separate A1 squares from the platinum （Pt） ground plane in our design, which significantly improves the design precision and the feasibility of the device fabrication. The combination of different sizes of AI squares gives rise to an absorption bandwidth of over 210 GHz with an absorption of over 90%. Our results also show that our device is almost polarization-insensitive. It works very well for all azimuthal angles with an absorption of beyond 80%.     

Monitoring the reaction between AICl3 and o-xylene by using terahertz spectroscopy

Terahertz time-domain spectroscopy （THz-TDS） is used to study the interaction between AlCl3 and o-xylene in a temperature range from 300 K to 368 K. For comparison, the three isomers of o-, m-, and p-xylene are measured by using THz-TDS. The o-xylene carries out isomerization reaction in the presence of catalyst AlCl3. The absorption coefficient of the mixed reaction solution is extracted and analyzed in the frequency range from 0.2 THz to 1.4 THz. The temperature dependence of the absorption coefficient, which is influenced by both the dissolution of AlCl3 and the production of the two other isomer resultants, is obtained, and it can indicate the process of the isomerization reaction. The results suggest that THz spectroscopy can be used to monitor the isomerization reaction and other reactions in chemical synthesis, petrochemical and biomedical fields.     

Investigation on Transmission Properties of Terahertz Wave Through Semiconductor Aperture

The transmission properties of terahertz （THz） wave passing through semiconductor aperture have been investigated. The dispersion relationship for surface plasmon polariton （SPP） at different temperatures has been numerically calculated. The results show that the dispersion relationship increases with the increasing of frequency and the decreasing of temperature, the thickness of slab has to be taken into consideration because of the large skin depth for semiconductor slab. In addition, the propagation constant increases with the increasing of frequency and the decreasing of temperature.     

Simulation Investigation on Optical and Electrical Properties of Carbon Nanotube in Terahertz Region

Under the framework of Maxwell-Garnett （M-G） model, the optical and electrical properties of singlewalled carbon naotube （SWCNT）, double-walled carbon nanotube （DWCNT） and hydrogen-doped carbon nanotube （H-doped GNT） in terahertz （THz） region have been investigated. It has been found that as frequency increases the loss tangent and conductivity show a peak. The loss tangent and conductivity of SWCNT is larger than that of DWCNT and H-doped CNT. The loss tangent and conductivity increase with the increases of filling factor and the decreases of geometrical factor.     

太赫兹场和倾斜磁场对超晶格电子动力学特性调控规律研究

微带超晶格在磁场和太赫兹场调控下表现出丰富而复杂的动力学行为, 研究微带电子在外场作用下的输运性质对于太赫兹器件设计与研制具有重要意义. 本文采用准经典的运动方程描述了超晶格微带电子在沿超晶格生长方向(z方向)的THz场和相对于z轴倾斜的磁场共同作用下的非线性动力学特性. 研究表明, 在太赫兹场和倾斜磁场共同作用下, 超晶格微带电子随时间的演化表现出周期和混沌等新奇的运动状态. 采用庞加莱分支图详细研究了微带电子在磁场和太赫兹场调控下的运动规律, 给出了电子运行于周期和混沌运动状态的参数区间. 在电场和磁场作用下, 微带电子将产生布洛赫振荡和回旋振荡, 形成复杂的协同耦合振荡. 太赫兹场与这些协同振荡模式之间的相互作用是导致电子表现出周期态、混沌态以及倍周期分叉等现象的主要原因.     

基于石墨烯的太赫兹器件研究进展

石墨烯是一种零带隙二维的半导体材料, 具有极高的载流子迁移率, 优异的机械、电学、热学和光学等性能. 在太赫兹辐射源、调制器和探测器件的研究中, 石墨烯材料具有独特的优势. 本文以石墨烯材料在太赫兹辐射源、调制器以及探测器等器件方面的应用为主, 综述了石墨烯太赫兹器件的最新研究进展.     

基于可调谐准高斯波束太赫兹源的成像系统研究

报道了一种基于频率可调谐准高斯太赫兹波束的透射成像系统.研究表明,在这种成像系统中太赫兹波束具有良好的空间分布特性,其波束质量因子M²_x＝1.15,M²_z＝1.25,波束传输特性和聚焦特性良好.实验结果反映出成像系统的空间分辨能力与典型太赫兹波长(250μm)相接近.在太赫兹波输出1.0—2.5THz范围内,成像系统信噪比大于1000dB;在1.8THz处,信噪比 关键词： 太赫兹波 太赫兹成像 太赫兹探测     

太赫兹片上系统和基于微纳结构的太赫兹超宽谱源的研究进展

目前太赫兹辐射信号的功率不高,辐射带宽也较窄,这些对于生物化学、含能材料的太赫兹检测应用领域来说是一大限制因素,因此如何获得宽谱高功率的太赫兹源对于太赫兹时域光谱系统的发展是非常重要的;另一方面,常规的太赫兹系统是在自由空间传输探测的,测量过程需要在氮气或者干燥空气环境中进行,以克服空气中水的吸收干扰,同时自由空间中的光场与物质相互作用的模式又降低了物质检测的灵敏度,这对于痕量物质检测来说构成了挑战.面对这一问题,太赫兹片上系统利用微纳结构中的局域场效应实现对物质的低浓度检测,此方案有助于解决这一应用难题.综上所述,本文分成以下两部分阐述:首先阐述了纳米金属薄膜作为新的太赫兹源,它可以同时产生非相干的和相干的太赫兹信号,其输出为超过100 THz的太赫兹-红外辐射,功率高达10 mW,这种超宽谱和高功率现象主要是由于非相干的热辐射效应引起的;第二,阐述了基于不同传输线结构、不同基底材料的太赫兹片上系统结构设计和光谱应用.基于共面带状线结构和聚合物材料基底的太赫兹片上系统有着较低的损耗,能够实现超过2 THz带宽的测量和生物化学应用.     

利用3D打印技术制备太赫兹器件

高性能的太赫兹器件在控制太赫兹波方面起到重要的作用,因此寻求一种简单有效的太赫兹器件加工方案非常必要。本文以太赫兹波导和太赫兹滤波器为例,分别选用Kagome型光子晶体结构的波导和一维光子晶体结构的滤波器,运用商用的3D打印机加工样品,并采用透射式太赫兹时域光谱系统对样品的参数进行测量。实验结果表明:加工的波导在0.2~1.0 THz范围内传输损耗平均值约为0.02 cm~(-1),最小值可达到0.002 cm~(-1),且可运用机械拼接的方式将多个波导进行简单的连接从而获得更长的波导而不引起严重的损耗;滤波器的透射谱在0.1~0.5 THz之间有两个明显高损耗带;这两组实验结果均与理论预计非常接近。本文运用太赫兹波导和滤波器的实例证实了3D打印技术加工太赫兹器件的可行性,将会成为获取性能可控、价格低廉的太赫兹器件的有效途径。     

双色场诱导气体产生相干可控的四次谐波

利用钛宝石飞秒激光器输出的基频脉冲ω及其倍频脉冲2ω所构成双色场作用空气, 实验中检测到了中心波长处于真空紫外波段的四阶谐波. 在气体未发生电离的情况下, 四次谐波强度对双色场的能力依赖关系显示其产生是参量过程2ω+ω+ω→4ω的贡献. 当气体发生电离, 四次谐波强度与双色场相对相位有关, 可通过双色场相干控制. 实验研究了四次谐波对双色场相位的依赖性以及与太赫兹波的关联性, 其结果与数值模拟结果相符, 分析发现当气体发生电离时四次谐波的产生过程存在太赫兹辐射Ω_THz的参与, 是参量过程2ω+2ω±Ω_THz→4ω和2ω+ω+ω→4ω的共同贡献.     

太赫兹科学与技术研究回顾

太赫兹光谱系统利用远红外辐射获得分子的某些光谱信息，这些信息在电磁谱的其他波段中是很难得到的．材料的研究是现代太赫兹系统中的重要的组成部分，一方面因为新的、大功率的太赫兹光源极大地依赖于如量子级联结构一类的新材料；另一方面，太赫兹的光谱和成像技术也为扩展诸如半导体和生物有机分子等材料的应用提供了一个有力的工具．     

光子晶体对太赫兹波的调制特性研究

利用传输矩阵方法研究了掺杂半导体n-GaAs/聚碳酸脂一维光子晶体的太赫兹波透射谱.研究结果发现,与一般由两种介电材料组成的一维光子晶体不同,由于掺杂半导体中自由载流子对太赫兹波存在较强的吸收,所以这种材料组成的一维光子晶体除可形成光子带隙外,还可以增强n-GaAs对太赫兹波的透射.同时还提出了一种基于这种一维光子晶体的太赫兹波调制器,通过外加电压控制半导体中电子浓度的大小可实现对太赫兹透射波幅度的调制. 关键词： 掺杂半导体光子晶体 太赫兹波 太赫兹波的调制     

二维电子气等离激元太赫兹波器件

固态等离激元太赫兹波器件正成为微波毫米波电子器件技术和半导体激光器技术向太赫兹波段发展和融合的重要方向之一。本综述介绍AlGaN/GaN异质结高浓度和高迁移率二维电子气中的等离激元调控、激发及其在太赫兹波探测器、调制器和光源中应用的近期研究进展。通过光栅和太赫兹天线实现自由空间太赫兹波与二维电子气等离激元的耦合,通过太赫兹法布里-珀罗谐振腔进一步调制太赫兹波模式,增强太赫兹波与等离激元的耦合强度。在光栅-谐振腔耦合的二维电子气中验证了场效应栅控的等离激元色散关系,实现了等离激元模式与太赫兹波腔模强耦合产生的等离极化激元模式,演示了太赫兹波的调制和发射。在太赫兹天线耦合二维电子气中实现了等离激元共振与非共振的太赫兹波探测,建立了太赫兹场效应混频探测的物理模型,指导了室温高灵敏度自混频探测器的设计与优化。研究表明,基于非共振等离激元激发可发展形成室温高速高灵敏度的太赫兹探测器及其焦平面阵列技术。然而,固态等离激元的高损耗特性仍是制约基于等离激元共振的高效太赫兹光源和调制器的主要瓶颈。未来的研究重点将围绕高品质因子等离激元谐振腔的构筑,包括固态等离激元物理、等离激元谐振腔边界的调控、新型室温高迁移率二维电子材料的运用和高品质太赫兹谐振腔与等离激元器件的集成等。     

基于石墨烯的太赫兹波散射可调谐超表面

设计了一个可调谐的太赫兹超表面,由在随机反射超表面基底中嵌入可偏置的双层石墨烯构成,可以实现对太赫兹波散射特性的动态调控.全波仿真试验结果证实了所预期的超表面散射可调性能.通过增大偏置电压提升石墨烯的费米能级,使得该超表面的太赫兹波散射样式从漫反射逐渐向镜面反射过渡,从而实现散射特性的连续调控,且该超表面具有对电磁波极化角度不敏感的特点.这些特性使得该超表面能很好地融合到变化的环境中,在太赫兹隐身方面具有潜在的应用价值.