Compact, Low Threshold Nd^3＋：YVO4 Self-Raman Laser at 1178 nm

A compact low-threshold Raman laser at 1178 nm is experimentally realized by using a diode-end-pumped actively Q-switched Nd^3＋ ：YVO4 self-Raman laser. The threshold is 370mW at a pulse repetition frequency of S kHz. The maximum Raman laser output is 182 m W with the pulse duration smaller than 20 ns at a pulse repetition frequency of 30kHz with 1.8 W incident power. The optical efficiency from the incident power to the Raman laser is 10% and the slope efficiency is 13.5%.     

Diode-pumped intra-cavity doubled Nd:LuVO4 laser at 458 nm

We have demonstrated a diode-pumped intra-cavity frequency doubling Nd:LuVO₄ laser operating at 916 nm with a Z-folded cavity. A 10-mm long LBO crystal, cut for critical type I phase matching at 912 nm, is used for the experiment. A maximum output power of 330 mW at 458 nm has been achieved at pump power of 22 W. The optical-to-optical conversion efficiency and slope efficiency is 1.5% and 2.3%, respectively. The power instability at the maximum output power in 30 min is better than 3%.     

Intra-cavity second harmonic generation with Nd:YVO4/BIBO laser at 542 nm

We report, for the first time, an efficient intra-cavity second-harmonic generation (SHG) at 1084 nm in a nonlinear optical crystal, BiB₃O₆(BIBO) at the direction of (θ, ?) = (170.1°, 90°), performed with a LD end-pumped cw Nd:YVO₄ laser. With 590 mW diode pump power, a continuous-wave (cw) SHG output power of 19 mW at 542 nm yellow-green color has been obtained using a 1.5 mm-thick BIBO crystal. The optical conversion efficiency was 3.22%. It was found that the output wavelength could be 532 nm, 537 nm or 542 nm according to regulating the angle of BIBO.     

Continuous-wave operation of a room-temperature Ho:YAP laser pumped by a Tm:YAP laser

We reported the Ho:YAP laser pumped by the Tm:YAP laser. The Ho:YAP laser maximum output power was 4.91 W when the incident power was 10.1 W with the threshold of 2.63 W. The slope efficiency was 63.7%, corresponding to an optical-to-optical efficiency of 48.6%. The Ho:YAP output wavelength was centered at 2118.2 nm with bandwidth of about 1 nm. We estimate the beam quality to be M² = 1.29.     

43 W picosecond laser and second-harmonic generation experiment

Combining the advantages of diode-end-pumped Nd: YVO₄ and diode-side-pumped Nd: YAG amplifiers, a high average power and high beam quality picosecond laser is designed. The system delivers a picosecond laser with average power of 43.4 W and good beam quality of M² < 1.7. By focusing the high power picosecond laser in LBO crystal, 532 nm green laser with maximal power of 20.8 W is generated and the conversion efficiency of second-harmonic generation reaches 56.4% when 17.7 W green laser obtained from the fundamental frequency laser with power of 31.4 W and beam quality of M² < 1.25.     

Diode-pumped passively Q-switched Nd:LuVO4 laser at 916 nm

We demonstrate a passively Q-switched Nd:LuVO₄ laser at 916 nm by using a Nd, Cr:YAG crystal as the saturable absorber. As we know, it is the first time to realize the laser with a simple linear resonator. When the incident pump power increased from 14.6 W to 23.7 W, the pulse width of the Q-switched laser decreased from 24 ns to 21 ns. The pulse width was insensitive to the incident pump power in the experiment. The average output power of 288 mW with repetition rate of 39 kHz was obtained at an incident pump power of 22.5 W, with the optical-to-optical efficiency and slope efficiency 1.3% and 3.6%, respectively.     

Continuous-wave broadly tunable Cr:ZnSe laser pumped by a thulium fiber laser

We describe a compact, broadly tunable, continuous-wave (cw) Cr²⁺:ZnSe laser pumped by a thulium fiber laser at 1800 nm. In the experiments, a polycrystalline ZnSe sample with a chromium concentration of 9.5 × 10¹⁸ cm⁻³ was used. Free-running laser output was around 2500 nm. Output couplers with transmissions of 3%, 6%, and 15% were used to characterize the power performance of the laser. Best power performance was obtained with a 15% transmitting output coupler. In this case, as high as 640 mW of output power was obtained with 2.5 W of pump power at a wavelength of 2480 nm. The stimulated emission cross-section values determined from laser threshold data and emission measurements were in good agreement. Finally, broad, continuous tuning of the laser was demonstrated between 2240 and 2900 nm by using an intracavity Brewster cut MgF₂ prism and a single set of optics.     

Continuous-wave high-power multi-pass pumped thin-disc Nd:GdVO4 laser

A thin-disc Nd:GdVO₄ laser in multi-pass pumping scheme was developed. Continuous-wave output power of 13.9 W at 1.06 μm for an absorbed power at 808 nm of 22 W was demonstrated from a 250-μm thick, 0.5-at.% Nd:GdVO₄ in a 4-pass pumping; the slope efficiency in absorbed power was 0.65, or 0.47 in input power. Output performances were also investigated under diode laser pumping at 879 nm, directly into the emitting ⁴F_3/2 level: maximum power of 3.6 W was obtained at 6.2 W of absorbed power with 0.69 slope efficiency. Compared with pumping at 808 nm, into the highly absorbing ⁴F_5/2 level, improvements of laser parameter in absorbed power (increase of slope efficiency, decrease of threshold) were obtained, showing the advantages of the pumping into the emitting level. However, the laser performances expressed vs. the incident power were modest owing to the low absorption efficiency at 879 nm. Thus, increased number of passes of the medium would be necessary in order to match the performances in input power obtained under 808-nm pumping.     

Compact low threshold Cr:YAG passively Q-switched intracavity optical parametric oscillator

We report a compact KTP-based intracavity optical parametric oscillator (IOPO) driven by a diode-end-pumped passively Q-switched Nd:YVO₄/Cr:YAG laser. For the first time, we take the thermal lens effect of the Cr:YAG into consideration and discuss its impact on the signal output. Diode pump threshold as low as 0.52 W has been achieved, which is the lowest result reported to date. At the incident diode pump power of 4 W, we obtained the maximum signal average and peak power of 358 mW and 12.5 kW, respectively, corresponding to a diode-to-signal conversion efficiency of 9%. Moreover, cavity-dumping characteristic and pulse transforming process from 1064 to 1573 nm are qualitatively analyzed.     

An 8.1 W diode pumped solid-state quasi-continuous-wave yellow laser at 589 nm by intracavity sum-frequency mixing generation

We report an L-shaped symmetrical co-folding-arm plane-plane diode pumped solid-state yellow laser at 589 nm by using intracavity sum-frequency mixing. By carefully designing the cavity and employing various techniques to optimize the laser’s specifications, a quasi-continuous-wave (QCW) free-oscillation yellow laser source, which has an average output power of 8.1 W, a beam quality factor of M² = 2.3, and a repetition rate of 1.1 kHz, is developed. The generation of yellow laser at 589 nm is achieved by intracavity sum-frequency mixing between the laser lines at 1319 nm and 1064 nm of an Nd:YAG laser in a KTP crystal. To the best of our knowledge, the 8.1 W output at 589 nm is higher than any other diode pumped solid-state yellow laser generated by intracavity sum-frequency generation so far.     

41 mW high average power picosecond 177.3 nm laser by second-harmonic generation in KBBF

We report on the generation of high average power, high repetition rate, and picosecond (ps) deep-ultraviolet (DUV) 177.3 nm laser. The DUV laser is produced by second-harmonic generation of a frequency-tripled mode-locked Nd: YVO₄ laser (<15 ps, 80 MHz) with KBBF nonlinear crystal. The influence of different fundamental beam diameters on DUV output power and KBBF-SHG conversion efficiency are investigated. Under the 355 nm pump power of 7.5 W with beam diameter of 145 μm, 41 mW DUV output at 177.3 nm is obtained. To our knowledge, this is the highest average power for the 177.3 nm laser. Our results provide a power scaling by three times with respect to previous best works.     

High-power continuous-wave diode-end-pumped intracavity-frequency-doubled Nd:GdVO4/LBO red laser

A high-power continuous-wave (CW) diode-end-pumped intracavity-frequency-doubled red laser is reported here. The laser consists of a 0.3 at.% Nd:GdVO₄ crystal as laser gain medium, a type II non-critical phase-matched (NCPM) LBO crystal or a type I critical phase-matched (CPM) LBO crystal as frequency-doubler, and a three-mirror-folded cavity. At incident pump power of about 41 W, maximum output powers of 3.8 W and 3 W at 671 nm are obtained with corresponding optical-to-optical conversion efficiency of 9.3% and 7.5%, respectively. During half an hour, the instability of the red beam is less than 3% at output of 3 W.     

Tunable frequency-controlled laser source in the near ultraviolet based on doubling of a semiconductor diode laser

Continuously tunable ultraviolet laser radiation at 397 nm was generated by doubling the output of a semiconductor diode laser. The fundamental radiation was provided by a 150 mW AlGaAs laser diode injected by a low-power AlGaAs laser diode which was frequency stabilized by optical feedback using a new scheme of a miniature external cavity. Second-harmonic generation was produced in a lithium-triborate crystal placed in a compact enhancement cavity. The fundamental radiation was used for sub-Doppler spectroscopy of the Ar I 4s ³ P ⁰ ₀–4p ¹ P ₁ transition at 795 nm; the second-harmonic radiation was used for spectroscopy of the Ca II 4² S _1/2–4² P _1/2 transition at 397 nm.     

Self-Q-switched and mode-locked 946 nm Cr,Nd:YAG laser

A simultaneous self-Q-switched and mode-locked diode-pumped 946 nm laser by using a Cr,Nd:YAG crystal as gain medium as well as saturable absorber is demonstrated for the first time as we know. The maximum average output power of 751 mW with a slope efficiency of 18.38% is obtained at an intra-cavity average peak power intensity of 4.83 × 10⁶ W/cm². Under this circumstance, the repetition rate of Q-switched envelopes is 9.63 kHz and the pulse width is about 460 ns. Almost 100% mode-locked modulation depth is obtained at all time in the experiment process whether the incident pump power is low or high. The repetition rate of mode-locked pulses within a Q-switched envelope is 135.13 MHz and the mode-locked pulse width is within 600 ps. The laser produces high-quality pulses in TEM₀₀-mode in the simultaneous self-Q-switched and mode-locked experiment.     

Continuous-wave Ho:GdVO4 laser pumped by Tm-doped fiber laser with a fiber Bragg grating at room temperature

We reported the Ho:GdVO₄ laser pumped by Tm-doped laser with a fiber Bragg grating. 2.03 W continuous-wave Ho:GdVO₄ laser output power is obtained under 10.5 W incident pump power, with the optical-to-optical conversion efficiency and slope efficiency of 19.3% and 32.3%, respectively, at 7 °C. We can see that, the lower the temperature is, the better the laser output character is. The beam quality factor is M² ∼ 1.29 measured by the traveling knife-edge method.     

Low threshold narrow pulse width eye-safe intracavity optical parametric oscillator at 1573 nm

We demonstrate a low threshold operation of a KTP-based intracavity optical parametric oscillator, emitting at 1573 nm, driven by a cw diode-end-pumped actively Q-switched Nd:YVO₄ laser. Diode-pump threshold around 0.86 W is achieved, which, to the best of our knowledge, is the lowest one under the similar experimental conditions. Owning to the efficient cavity-dumping effect, a signal pulse width as short as 1.4 ns and peak power higher than 3 kW is obtained, at the incident diode-pump power of 1.3 W and A-O modulating frequency of 9 kHz. Moreover, threshold characteristic for the IOPO is also studied, which is in well agreement with the experimental results.     

Diode-pumped passively mode-locked Nd:GdVO4 laser at 912 nm

We have demonstrated the stable mode-locked Nd:GdVO₄ laser operating on the ⁴F_3/2-⁴I_9/2 transition at 912 nm. With a four-mirror-folded cavity and a semiconductor saturable absorber mirror for passive mode-locking, we have gained 6.5 ps laser pulses at a repetition rate of 178 MHz. The laser is diode-end-pumped, and the total output power from the out coupler is 128 mw at an incident pump power of 19.7 W.     

Intracavity frequency doubling of an active Q-switched Nd:YAG laser with 2.25 W output power at 473 nm

An active Q-switched diode-end-pumped Nd:YAG laser is reported with 2.9 W output power on the ⁴F_3/2 → ⁴I_9/2 transitions at a pump power of 24 W. With intracavity frequency doubling using a 20-mm-long LBO, a maximum blue output power of 2.25 W is achieved at a repetition rate of 23 kHz. The conversion efficiency from the corresponding Q-switched fundamental output to blue output is 96%. The peak power of the Q-switched blue pulse is up to 610 W with 160 ns pulse width. The fluctuation of the blue output power is less than 4.0% at the maximum output power.     

Efficient and compact intracavity-frequency-doubled Nd:GdVO4/KTP laser end-pumped by a fiber-coupled laser diode

A compact and efficient diode-pumped intracavity-frequency-doubled Nd:GdVO₄/KTP green laser is demonstrated with a flat–flat cavity design. With a 1.3 at. % Nd³⁺-doped GdVO₄ crystal and pumped at the weak-absorption peak of 806 nm, the second-harmonic output power at 532 nm was measured to be 1.95 W at an incident pump power of 8.4 W, corresponding to an optical conversion efficiency of 23.2%. The output characteristic at the fundamental wavelength of 1.063 μm was investigated with two different pump wavelengths. More than 4.5-W output power was generated when the laser was pumped at 806.2 nm. Received: 26 July 2000 / Revised version: 18 September 2000 / Published online: 7 February 2001     

Diode-pumped Nd:BaY2F8 picosecond laser

Picosecond pulse generation at 1050 nm by a diode-pumped Nd:BaY₂F₈ (Nd:BaYF) active crystal has been investigated under low-power pumping (440 mW absorbed). The sample was oriented along the optical axes and cut at Brewster angle for y-axis laser polarization to minimize birefringence effects. Stable passive mode-locking operation has been achieved by inverse saturable absorption with 80-mW output power and 3.7-ps pulses.