An 8.1 W diode pumped solid-state quasi-continuous-wave yellow laser at 589 nm by intracavity sum-frequency mixing generation

We report an L-shaped symmetrical co-folding-arm plane-plane diode pumped solid-state yellow laser at 589 nm by using intracavity sum-frequency mixing. By carefully designing the cavity and employing various techniques to optimize the laser’s specifications, a quasi-continuous-wave (QCW) free-oscillation yellow laser source, which has an average output power of 8.1 W, a beam quality factor of M² = 2.3, and a repetition rate of 1.1 kHz, is developed. The generation of yellow laser at 589 nm is achieved by intracavity sum-frequency mixing between the laser lines at 1319 nm and 1064 nm of an Nd:YAG laser in a KTP crystal. To the best of our knowledge, the 8.1 W output at 589 nm is higher than any other diode pumped solid-state yellow laser generated by intracavity sum-frequency generation so far.     

LD end pumped, actively mode locked and passively Q-switched Nd:YAP laser at 1341 nm

An end pumped Nd:YAP laser at 1341 nm is actively mode locked and passively Q-switched. Pumping was done with a pulsed high power laser diode with maximum power 425 W. V³⁺:YAG with 61% initial transmission served as saturable absorber, and an acousto-optic modulator is used for active mode locking. The output pulse train with 69 ns duration has a total energy of 3.2 mJ with ±4% shot-to-shot fluctuation. The peak output energy of a single mode locked pulse is 0.25 mJ. The pulse duration of a single mode locked pulse is less than 800 ps. The output laser beam is nearly diffraction limited with 1.6 mm diameter, and beam propagation factor M² about 1.3.     

43 W picosecond laser and second-harmonic generation experiment

Combining the advantages of diode-end-pumped Nd: YVO₄ and diode-side-pumped Nd: YAG amplifiers, a high average power and high beam quality picosecond laser is designed. The system delivers a picosecond laser with average power of 43.4 W and good beam quality of M² < 1.7. By focusing the high power picosecond laser in LBO crystal, 532 nm green laser with maximal power of 20.8 W is generated and the conversion efficiency of second-harmonic generation reaches 56.4% when 17.7 W green laser obtained from the fundamental frequency laser with power of 31.4 W and beam quality of M² < 1.25.     

High-beam-quality, 5.1 J, 108 Hz diode-pumped Nd:YAG rod oscillator-amplifier laser system

A high efficiency, high beam quality diode-pumped Nd:YAG master oscillator power-amplifier (MOPA) laser with six amplifier stages is demonstrated. The oscillator with two-rod birefringence compensation was designed as a thermally determined near hemispherical resonator, which presents a pulse energy of 223 mJ with a beam quality value of M² = 1.29 at a repetition rate of 108 Hz. The MOPA system delivers a pulse energy of 5.1 J with a pulse width of 230 μs, a M² factor of 3.6 and an optical-to-optical efficiency of 38.5%. To the best of our knowledge, this is the highest pulse energy for a diode-pumped Nd:YAG rod laser operation with a high beam quality and a pulse width of hundreds of microseconds at a repetition rate of over 100 Hz.     

532 nm laser based on V-type doubly resonant intra-cavity frequency-doubling

LD side-pumped dual interconnected V-type quasi-continuous wave green laser has been demonstrated. The two Nd:YAG modules were placed in a plane-concave V-type resonator and a plane-concave straight cavity formed two stable operation beam of the 1064-nm fundamental frequency laser. Through acousto-optic Q-switched and frequency doubling crystal, two double-frequency laser beams arrived at the folded flat mirror, which were unidirectional output by the folded flat mirror at the end. As the pumped current was 50 A, the 532 nm green laser maximum average output power of 206 W at a repetition of 22.4 kHz was achieved with a pulse width of 201 ns and the largest single pulse energy of 9.2 mJ, corresponding to a peak power of 45.8 kW and a double frequency efficiency of 60.2%.     

Gain-saturated Ni-like antimony laser at 11.4 nm in grazing-incidence pumping geometry

We report on gain-saturated operation of the 4d → 4p, J = 0-1, 11.4 nm soft-X-ray laser line in Ni-like antimony (Sb) at a pump energy of only 2.5 J. The driving laser used was a 1054 nm Nd:glass CPA laser system with a pulse duration of 7 ps (FWHM). The pump beam was focused with a tilted on-axis parabolic mirror in a grazing-incidence (GRIP) pumping configuration at an incidence angle of 45°. A fraction of 2.8% of the pump energy (∼70 mJ) was used for the prepulse, which was propagated along the same beam line as the main pulse and arrived at the target 4.4 ns before the main pulse.     

41 mW high average power picosecond 177.3 nm laser by second-harmonic generation in KBBF

We report on the generation of high average power, high repetition rate, and picosecond (ps) deep-ultraviolet (DUV) 177.3 nm laser. The DUV laser is produced by second-harmonic generation of a frequency-tripled mode-locked Nd: YVO₄ laser (<15 ps, 80 MHz) with KBBF nonlinear crystal. The influence of different fundamental beam diameters on DUV output power and KBBF-SHG conversion efficiency are investigated. Under the 355 nm pump power of 7.5 W with beam diameter of 145 μm, 41 mW DUV output at 177.3 nm is obtained. To our knowledge, this is the highest average power for the 177.3 nm laser. Our results provide a power scaling by three times with respect to previous best works.     

Efficient quasi-three-level Nd:YAG laser at 946 nm pumped by a tunable external cavity tapered diode laser

Using a tunable external cavity tapered diode laser (ECDL) pumped quasi-three-level Nd:YAG laser, a fivefold reduction in threshold and twofold increase in slope efficiency is demonstrated when compared to a traditional broad area diode laser pump source. A TEM₀₀ power of 800 mW with 65% slope efficiency is obtained, the highest reported TEM₀₀ power from any 946 nm Nd:YAG laser pumped by a single emitter diode laser pump source. A quantum efficiency of 0.85 has been estimated from experimental data using a simple quasi-three-level model. The reported value is in good agreement with published values, suggesting that the model is adequate. Improvement of the 946 nm laser due to the ECDL's narrow spectrum proves to be less significant when compared to its spatial quality, inferring a broad spectrum tapered diode laser pump source may be most practical. Experimental confirmation of such setup is given.     

Diode-pumped passively mode-locked Nd:GdVO4 laser at 912 nm

We have demonstrated the stable mode-locked Nd:GdVO₄ laser operating on the ⁴F_3/2-⁴I_9/2 transition at 912 nm. With a four-mirror-folded cavity and a semiconductor saturable absorber mirror for passive mode-locking, we have gained 6.5 ps laser pulses at a repetition rate of 178 MHz. The laser is diode-end-pumped, and the total output power from the out coupler is 128 mw at an incident pump power of 19.7 W.     

Self-Q-switched and mode-locked 946 nm Cr,Nd:YAG laser

A simultaneous self-Q-switched and mode-locked diode-pumped 946 nm laser by using a Cr,Nd:YAG crystal as gain medium as well as saturable absorber is demonstrated for the first time as we know. The maximum average output power of 751 mW with a slope efficiency of 18.38% is obtained at an intra-cavity average peak power intensity of 4.83 × 10⁶ W/cm². Under this circumstance, the repetition rate of Q-switched envelopes is 9.63 kHz and the pulse width is about 460 ns. Almost 100% mode-locked modulation depth is obtained at all time in the experiment process whether the incident pump power is low or high. The repetition rate of mode-locked pulses within a Q-switched envelope is 135.13 MHz and the mode-locked pulse width is within 600 ps. The laser produces high-quality pulses in TEM₀₀-mode in the simultaneous self-Q-switched and mode-locked experiment.     

4.44 W of CW 515 nm green light generated by intracavity frequency doubling Yb:YAG thin disk laser with LBO

We demonstrate the generation of 515 nm green laser with diode-pumped Yb:YAG thin disk by intracavity frequency doubling of type-I phase-matched LiB₃O₅(LBO) in a V-type cavity at room temperature. A continuous-wave (CW) output power of 4.44 W at 515 nm was obtained. Optical-optical efficiency of 515 nm green laser is 14.6%. The fluctuation of green laser was 1.6% at the maximum output power in 0.5 h. Thermal lensing effects in Yb:YAG thin disk are investigated too.     

678 nm RTP electro-optical Q-switched ceramic laser

The RTP electro-optical Q-switched ceramic laser at the wavelength of 678 nm with narrow pulse width is studied. We used the laser diode arrays side-pumped Nd:YAG ceramic crystal with 1.1 at% Nd doping and dimensions of Φ3 mm × 50 mm, designed folding cavity parameters, and discussed the variation of the beam radius in the ceramic crystal and frequency doubling crystal with the thermal focal length of ceramic crystal or KTP crystal. By using double RTP crystals as electro-optic Q-switch and KTP crystal type II phase matching for intracavity frequency-doubling, a narrow pulse width electro-optical Q-switched Nd:YAG ceramic laser was obtained. The output energy of 0.9 mJ and the pulse width of 41.6 ns at 678 nm are obtained at the repetition rate of 1000 Hz and pumped power of 144 W. The results formed the basis for the further development of the high power and high efficiency ceramic red laser.     

Simultaneous dual-wavelength Q-switched Nd:YAG laser operating at 1.06 μm and 946 nm

Considering the reabsorption loss of the quasi-three level system and the unsaturable loss of the saturable absorber, we obtained the operating condition of a diode-pumped simultaneous dual-wavelength Q-switched Nd:YAG laser operating at 1.06 μm and 946 nm. The dual-wavelength pulsed laser was realized successfully through adaptive coating design of the cavity mirrors. As much as 1.6 W total average output power of the dual-wavelength at 1.06 μm and 946 nm was achieved at the incident pump power of 14.2 W with an optical conversion efficiency of 11.3%.     

QCW diode-pumped 654 W AO Q-switched Nd:YAG rod oscillator-amplifier laser

A diode laser-pumped acoustic-optic Q-switched Nd:YAG master-oscillator power amplifier laser is presented. The laser is quasi continuously pumped at 1.1 kHz with a pulse width of 172 μs, and the ultrasonic frequency of the AO Q-switcher is set at a higher value (53 kHz). The master oscillator is designed as a thermally near-unstable-resonator, which presents an average output power of 48 W with a beam quality value of M² = 1.41 and a Q-switching pulse duration of 121 ns. The maximum average power of the MOPA system is 654 W, and the beam quality is M² = 6.     

Diode-pumped Nd:YVO4-Nd:CNGG crystals blue laser at 462 nm by intracavity sum-frequency-mixing

We report a laser architecture to obtain continuous-wave (cw) blue radiation at 462 nm. A 808 nm diode-pumped the Nd:YVO₄ crystal emitting at 914 nm. A part of the pump power was then absorbed by the Nd:YVO₄ crystal. The remaining was used to pump the Nd:CNGG crystal emitting at 935 nm. Intracavity sum-frequency mixing at 914 and 935 nm was then realized in a LiB₃O₅ (LBO) crystal to reach the blue radiation. We obtained a continuous-wave output power of 892 mW at 462 nm with a pump laser diode emitting 18.4 W at 808 nm.     

High power single-shot laser ablation of silicon with nanosecond 355 nm

We report on high intensity single-shot laser ablation of monocrystalline silicon with a nanosecond Nd:YAG at 355 nm. It is shown that for incident laser intensities exceeding ∼11.5 GW/cm² on the silicon surface, unusually high etch depths can be achieved reaching values up to 60 μm. The results support previous observations of dramatic increase in etch rates in single-shot laser ablation at 266 nm. A laser-induced explosive boiling mechanism together with secondary plasma heating is believed to be associated with this effect.     

Highly efficient Nd:GdVO4/BiBO laser at 456 nm under direct 880 nm diode laser pumping

The continuous-wave high-efficiency laser emission of Nd:GdVO₄ at the second-harmonic of 456 nm obtained by intracavity frequency doubling with an BiB₃O₆(BiBO) nonlinear crystal is investigated under pumping by diode laser at 880 nm into emitting level ⁴F_3/2. About 3.8 W at 456 nm with M² = 1.4 was obtained from a 5 mm-thick 0.4 at.% Nd:GdVO₄ laser medium and a 12 mm-long BiBO nonlinear crystal in a Z-type cavity for 13.9 W absorbed pump power. An optical-to-optical efficiency with respect to the absorbed pump power was 0.274. Comparative results obtained for the pump with diode laser at 808 nm, into the highly-absorbing ⁴F_5/2 level, are given in order to prove the advantages of the 880 nm wavelength pumping.     

Intra-cavity second harmonic generation with Nd:YVO4/BIBO laser at 542 nm

We report, for the first time, an efficient intra-cavity second-harmonic generation (SHG) at 1084 nm in a nonlinear optical crystal, BiB₃O₆(BIBO) at the direction of (θ, ?) = (170.1°, 90°), performed with a LD end-pumped cw Nd:YVO₄ laser. With 590 mW diode pump power, a continuous-wave (cw) SHG output power of 19 mW at 542 nm yellow-green color has been obtained using a 1.5 mm-thick BIBO crystal. The optical conversion efficiency was 3.22%. It was found that the output wavelength could be 532 nm, 537 nm or 542 nm according to regulating the angle of BIBO.     

Diode-pumped passively Q-switched Nd:LuVO4 laser at 916 nm

We demonstrate a passively Q-switched Nd:LuVO₄ laser at 916 nm by using a Nd, Cr:YAG crystal as the saturable absorber. As we know, it is the first time to realize the laser with a simple linear resonator. When the incident pump power increased from 14.6 W to 23.7 W, the pulse width of the Q-switched laser decreased from 24 ns to 21 ns. The pulse width was insensitive to the incident pump power in the experiment. The average output power of 288 mW with repetition rate of 39 kHz was obtained at an incident pump power of 22.5 W, with the optical-to-optical efficiency and slope efficiency 1.3% and 3.6%, respectively.     

Continuous-wave operation of a room-temperature Ho:YAP laser pumped by a Tm:YAP laser

We reported the Ho:YAP laser pumped by the Tm:YAP laser. The Ho:YAP laser maximum output power was 4.91 W when the incident power was 10.1 W with the threshold of 2.63 W. The slope efficiency was 63.7%, corresponding to an optical-to-optical efficiency of 48.6%. The Ho:YAP output wavelength was centered at 2118.2 nm with bandwidth of about 1 nm. We estimate the beam quality to be M² = 1.29.