Aluminum Hugoniot from model calculations including semicore electrons based on density functional theory

We present a method to obtain Hugoniot from model calculations based on density functional theory, and apply the method to aluminum Hugoniot. Technological advances have extended the experimental research of high energy density physics, and call for quantitative theoretical analysis. However, direct computation of Hugoniot from density functional theory is very difficult. We propose two step calculations of Hugoniot from density functional theory. The first step is molecular dynamics simulations with an ambient temperature for electrons. The second step is total energy calculations of a crystal with desired high temperatures for electrons and with the ambient temperature for electrons. We treated the semicore 2s and 2p electrons of aluminum as valence electrons only for the total energy calculations of the aluminum crystal. The aluminum Hugoniot from our model calculations is in excellent agreement with available experimental data and the previous density functional theory calculations in the literature.     

Synchrotron radiation intensity and energy of runaway electrons in EAST tokamak

A detailed analysis of the synchrotron radiation intensity and energy of runaway electrons is presented for the Experimental Advanced Superconducting Tokamak(EAST). In order to make the energy of the calculated runaway electrons more accurate, we take the Shafranov shift into account. The results of the analysis show that the synchrotron radiation intensity and energy of runaway electrons did not reach the maximum at the same time. The energy of the runaway electrons reached the maximum first, and then the synchrotron radiation intensity of the runaway electrons reached the maximum.We also analyze the runaway electrons density, and find that the density of runaway electrons continuously increased. For this reason, although the energy of the runaway electrons dropped but the synchrotron radiation intensity of the runaway electrons would continue rising for a while.     

激光尾场加速电子的密度梯度注入的解析处理

在激光尾场加速电子的机理中, 引入适当的密度梯度容易实现并控制电子注入到等离子体波中实现加速. 迄今对密度梯度注入的理论研究主要采用粒子模拟. 本文发展了一种解析处理密度梯度注入的方法, 分析了密度下降区域中电子的注入和加速. 给出了一维密度梯度中电子注入发生的条件, 采用哈密顿力学得到了线性条件下密度梯度区的电子相空间分界线(separatrix); 讨论了密度梯度区电子注入的时间对电子进入密度均匀区持续加速的影响. 用粒子模拟验证了分析结果.     

托卡马克等离子体电流爬升阶段逃逸电子行为

 分析了电流爬升阶段等离子体密度和电流爬升率对逃逸电子行为的影响,研究了低杂波辅助电流驱动条件下的逃逸电子辐射行为。结果发现：电流爬升阶段等离子体密度的大小严重影响了电流爬升阶段甚至电流平顶阶段逃逸电子的行为,较低的等离子体密度将会导致放电过程中比较强的逃逸电子辐射;低能逃逸电子辐射随着电流爬升率的增大而增强;低杂波辅助电流爬升可以有效地节约装置的伏秒数;降低放电过程中的环电压,可有效抑制逃逸电子的产生。     

场向传播的内磁层哨声波对辐射带高能电子的共振扩散

基于高斯分布的哨声波谱密度分布、偶极子背景磁场模型以及建立在卫星观测数据基础上的半经验电子密度纬度分布模型,对于等离子体层顶以外区域(4≤L≤7),计算了准线性当地及弹跳平均电子共振扩散系数,并估算了与磁层哨声波回旋共振导致的辐射带电子损失及加速时间尺度.结果表明,波粒共振相互作用区域取决于电子能量、波谱分布、电子赤道抛射角以及当地电子密度及背景磁场.哨声波共振频率除了与以上5个参量有关外,还与地磁纬度有关.赤道哨声波主要影响较低能量辐射带电子的加速,中高纬度哨声波主要作用于较高能量辐射带电 关键词： 共振波粒相互作用 地球辐射带 哨声波 回旋共振加速及散射沉降     

激光与固体靶相互作用中低密度预等离子体对高能电子产生的影响

 对线极化、圆极化的超短超强激光脉冲与靶前有一段低密度预等离子体的固体靶的相互作用进行了理论和粒子模拟研究。激光通过有质动力加速机制加速预等离子体中的电子，研究了电子获得的最大能量随激光强度和预等离子体密度的变化。当激光脉冲与靶直接作用时，靶中的电子由于J×B机制而得到加速，所获得的能量比预等离子体中电子低。研究表明，在超短超强激光脉冲与固体靶相互作用中，预等离子体的存在有利于高能电子的产生。     

脉冲放电脱硫反应器中高能电子密度分布的光谱研究

脉冲流光放电产生的大于等于11.2 eV的高能电子能将处于基态的氮分子激发到N₂(C3Π_u)态,测试脉冲流光放电时的N₂(C3Π_u→B3Πg)发射光谱相对强度可以得出脉冲流光放电产生的高能电子的密度。实验在室温常压下研究了空气中线-板式脉冲流光放电脱硫反应器内高能电子密度分布情况,并研究了脉冲电压、反应器的线线间距对反应器内高能电子密度分布的影响。实验结果表明,反应器内的高能电子主要集中在放电线附近高电场区内,随着离放电线的距离增大,高能电子密度减小;脉冲电压对高能电子密度有很大影响,随着电压的升高,高能电子密度基本呈线性增大;线板间距固定,线线间距为线板间距的0.6～1倍时,反应器内高能电子密度分布较为均匀。     

Unexpected negative nonmonotonic magnetoresistance of the two-dimensional electrons in Si in a parallel magnetic field

We report observation of the unexpected negative and nonmonotonic magnetoresistance of 2D electrons in Si-MOSFET subjected to a varying in-plane magnetic field superimposed on a constant perpendicular field component. We show that this nonmonotonic magnetoresistance is irrelevant to the energy spectrum of mobile 2D electrons. We also observed variations of the density of mobile electrons with the in-plane field. We argue that both variations of the negative magnetoresistance and of the density of mobile electrons originate from the band of localized states. The latter coexist and interact with mobile electrons even at relatively high density, a factor of 1.5 higher than the critical density of the apparent metal-insulator transition.     

流体-亚稳态原子传输混合模型模拟空心阴极放电特性

利用流体-亚稳态原子传输混合模型研究了氩气矩形空心阴极放电稳态时的参数. 数值计算得到了压强为10 Torr时的电势、电子、离子和亚稳态氩原子密度以及电子平均能量的分布. 结果表明电子和离子密度峰值为4.7×10¹² cm^-3, 亚稳态原子密度峰值为2.1×10¹³ cm^-3. 本文同时对流体-亚稳态原子传输混合模型和单一流体模型模拟得到的放电参数进行了比较. 结果表明, 分步电离是新电子产生的重要来源, 亚稳态原子对空心阴极放电特性有重要影响. 与单一流体模型相比, 混合模型计算得到的电子密度升高, 阴极鞘层宽度和电子平均能量降低. 关键词： 空心阴极放电 流体-亚稳态原子传输模型 电子密度 分步电离     

HT-7托卡马克等离子体slide-away放电研究

在HT-7托卡马克上,只在等离子体放电击穿阶段充气,击穿后关闭充气阀门,让装置内真空室器壁的出气维持放电的进行,通过密度衰减实现了slide-away放电.实验分析了不同等离子体电流平台下的slide-away放电模式的密度阈值,以及相同充气量的条件下放电等离子体电流对实现slide-away放电的影响.研究了slide-away放电模式下密度提升对等离子体放电状态的影响.结果发现,slide-away放电模式下的密度提升使得H_a线辐射强度增强,等离子体中超热电子的约束性能变差,等离子体芯部的超热电子减少,高能逃逸电子厚靶轫致辐射增加. 关键词： slide-away放电 托卡马克 等离子体 逃逸电子     

The Electron Cloud Produced by Intense Ion Beam in Penning Trap

When an ion beam pass through the Penning trap an electron cloud is produced.The distributions of the electron density,electron temperature,drift angular velocity of electrons,diffusion flow density of electrons and electric potential in the electron cloud are discussed by means of the fluid equations of the motion of electrons.     

High-Yield High-Efficiency Positron Generation in High-Z Metal Targets Irradiated by Laser Produced Electrons from Near-Critical Density Plasmas

An improved indirect scheme for laser positron generation is proposed. The positron yields in high-Z metal targets irradiated by laser produced electrons from near-critical density plasmas and underdense plasma are investigated numerically. It is found that the positron yield is mainly affected by the number of electrons of energies up to several hundreds of MeV. Using near-critical density targets for electron acceleration, the number of high energy electrons can be increased dramatically. Through start-to-end simulations, it is shown that up to 6.78 x 10~(10) positrons can be generated with state-of-the-art Joule-class femtosecond laser systems.     

Tonks-Langmuir problem for a bi-Maxwellian plasma

An analytical solution of the Tonks-Langmuir (TL) problem with a bi-Maxwellian electron energy distribution function (EEDF) is obtained for a plasma slab. The solution shows that the ambipolar potential, the plasma density distribution, and the ion flux to the wall are mainly governed by the cold electrons, while the ionization rate and voltage drop across the wall sheath are governed by the hot electrons. The ionization rate by direct electron impact is found to be spatially rather uniform, contrary to the T-L solution where it is proportional to the plasma density distribution. The temperature of hot electrons defined by the ionization balance is found to be close to that of the T-L solution for a mono-Maxwellian EEDF, and is in reasonable agreement with experiments carried out in a low pressure capacitance RF discharge. The energy balance for cold electrons in this discharge shows that their heating by hot electrons via Coulomb interaction is equalized by the cold electrons' escape to the RF electrodes during collapse of the RF sheath     

Mode-coupling assisted electron accelerations by a plasma wave

The acceleration of electrons by a plasma wave in the presence of density ripple in plasma has been investigated. Plasma density ripple can excite higher harmonics of different phase velocities of the fundamental plasma wave. The combined role of the different harmonics of the plasma wave contributes significantly in electrons energy gain during acceleration by the fundamental plasma wave. Our calculation shows that the plasma electrons gain considerable energy during the acceleration by the plasma waves in the presence of a density ripple in plasma. The initial electron energy and the ripple density play an important role for the acceleration of an electron.     

On the Kinetics of the Active Zone of the Stationary SF6 Beam Discharge Plasma

The paper deals with the impact of intensive electron attachment on the kinetics of the electrons in the active zone of the stationary band-like beam discharge plasma in SF₆ which is an alternative useful plasma medium for “dry etching”. The energy distribution of the electrons in this plasma was obtained by numerically solving the Boltzmann equation which includes apart from elastic collisions, different exciting collision processes, attachment in electron collisions, direct ionization, the ambipolar loss of electrons, Coulomb interaction between electrons and of electrons with ions and the power input to the electrons by the turbulent electric field. In particular, due to the needed fulfilment of the consistent electron particle balance, for an extended region of the turbulence energy density in this plasma a large impact on the electron kinetics of the intensive electron attachment, which is the prevailing electron loss process, was found enforcing independent of the turbulence energy density always a large power input to the electrons, smooth and only slowly decreasing energy distributions even in the energy region of direct ionization.     

Phase Separation in the Neutral Falicov–Kimball Model

The Falicov–Kimball model consists of spinless electrons and classical particles (ions) on a lattice. The electrons hop between nearest neighbor sites, while the ions do not. We consider the model with equal numbers of ions and electrons and with a large on-site attractive force between ions and electrons. For densities 1/4 and 1/5, the ion configuration in the ground state had been proved to be periodic. We prove that for density 2/9 it is periodic as well. However, for densities between 1/4 and 1/5 other than 2/9 we prove that the ion configuration in the ground state is not periodic. Instead there is phase separation. For densities in (1/5, 2/9) the ground-state ion configuration is a mixture of the density 1/5 and 2/9 ground-state ion configurations. For the interval (2/9, 1/4) it is a mixture of the density 2/9 and 1/4 ground states.     

Anomalously high near-wall sheath potential drop in a plasma with nonlocal fast electrons

It is demonstrated for the first time that the presence of a small number of fast, nonlocal electrons can dramatically change the thickness of and electric field in the near-wall sheath. Even if the density of the nonlocal fast group, , is much less than the density of the bulk electrons, n(b) (n(f) approximately 10(-5) n(b)), the near-wall potential can increase dramatically resulting in a comparable increase in the sheath thickness. Because of this low fractional density, the average energy (electron temperature ) of all electrons is little changed from that of the bulk, yet the near-wall potential drop can increase to tens of T(e)/e. More importantly, due to the nonlocal nature of this group of electrons, the near-wall sheath potential is found to be independent of and is determined only by the energy of the fast group.     

激光与相对论电子束相互作用中阿秒X射线脉冲的产生

本文对激光与相对论电子束相互作用产生的阿秒X射线脉冲进行了研究.阿秒X射线脉冲是由于激光被相对论运动的电子束经过汤姆孙后向散射产生的.讨论了等离子体参数对产生的阿秒X射线的影响.发现其波长随着入射激光的频率的增加或电子束的速度增加而减小.选择合适的参数还可以获得"水窗"波段的X射线.还讨论了相对论电子束的密度与其前沿的密度梯度的大小对所产生X射线的转化效率的影响. 关键词： 阿秒X射线脉冲 汤姆孙后向散射 超强激光 相对论电子束     

Calculation of profile of charge carrier concentration in modulation doped structure with a wide potential well

We investigate the equilibrium state of interacting electron system with Fermi statistics in modulation doped structure with a wide quantum well. The model is formulated for the carrier system with a sufficiently high density, such that the de Broglie wavelength of electrons is smaller than the width of the quantum well. Due to a significant interaction of electrons with electric field of the doped layer, a state with strongly‐inhomogeneous density of electrons is formed. Within the hydrodynamic approach, we set up formalism for calculating the electron density across the width of the potential well. We have obtained the exact solution of the equations, which is expressed in terms of hypergeometric functions. Based on the deduced formulas, we performed numerical computations for the profile of carriers' concentrations in a potential well in the modulation doped Si/SiGe/Si structures.