Diode-pumped passively Q-switched and Q-switch mode-locked Nd:YVO<Subscript>4</Subscript> laser using single-wall carbon nanotube based saturable absorber

We present the performance of diode end-pumped Nd:YVO₄ laser in Q-switched and Q-switched mode-locking oscillation using a single-walled carbon nanotube based saturable absorber, which was fabricated using similar vertical evaporation technique. The average output power, repetition rate and pulse width of the Q-switched laser output were studied with different output couplers. The maximum average output power was 130 mW. For Q-switched mode-locking operation, the repetition rate of the mode-locked pulses concentrated in the Q-switched envelope was 58 MHz. The repetition rate of the Q-switched envelope maintained at 18 kHz, while the pulse width decreased along with the increasing of pump power. The maximum average output power was 53 mW.     

基于金纳米笼的1106 nm被动调Q Nd:GAGG激光器

成功制备了金纳米笼溶液并将其作为饱和吸收体,实现了中心波长为1106 nm的Nd:GAGG激光器的调Q运转。在输出镜透过率为3%的激光器中,在泵浦功率6.70 W下获得的最大平均输出功率为98 mW,此时对应的脉冲重复率为206 kHz,最短脉冲宽度为436 ns;在输出镜透过率为7%的激光器中,当泵浦功率为7.69 W时,得到的最大平均输出功率为121 mW,最短脉冲宽度为370 ns,对应的脉冲重复率为170 kHz。实验结果证明了金纳米笼在近红外波段激光器中用作饱和吸收体的巨大潜力。     

Laser diode and pumped Cr:Yag passively Q-switched yellow-green laser at 543 nm

Efficient and compact yellow green pulsed laser output at 543 nm is generated by frequency doubling of a passively Q-switched end diode-pumped Nd:YVO₄ laser at 1086 nm under the condition of sup-pressing the higher gain transition near 1064 nm. With 15 W of diode pump power and the frequency doubling crystal LBO, as high as 1.58 W output power at 543 nm is achieved. The optical to optical conversion efficiency from the corresponding Q-switched fundamental output to the yellow green output is 49%. The peak power of the Q-switched yellow green pulse laser is up to 30 kW with 5 ns pulse duration. The output power stability over 8 hours is better than 2.56% at the maximum output power. To the best of our knowledge, this is the highest watt-level laser at 543 nm generated by frequency doubling of a passively Q-switched end diode pumped Nd:YVO₄ laser at 1086 nm.     

Diode-pumped high-efficiency passively Q-switched Yb:CaYAlO<Subscript>4</Subscript> laser

We experimentally demonstrated a high-efficiency passively Q-switched Yb:CaYAlO₄ (Yb:CYA) laser based on a semiconductor-saturable absorber mirror (SESAM), and the output characteristics of the laser including the average output power, repetition frequency, pulse duration, pulse energy and pulse peak power were investigated by adopting output mirrors with different transmittances. When the transmittance of the output mirror was 5% and the pump power was set at about 7.76 W, a maximum average output power of as high as 2.480 W was achieved with a slope efficiency and light-to-light efficiency of the Q-switched Yb:CYA laser of up to 37.1% and 31.2%, respectively.     

热键合技术的Cr4+:YAG被动调Q激光器理论和实验研究

 采用数值求解被动调Q速率方程，并讨论了基于热键合技术被动调Q激光器的优化方法。通过数值仿真讨论分析了谐振腔的损耗、饱和吸收体的初始透过率、输出镜的反射率和泵浦功率等参数对激光输出的影响。结果表明：输出镜存在最佳透过率，使得输出功率最高和脉冲能量最大；减小饱和吸收体的初始透过率能有效提高脉冲能量，并压缩脉宽，但是会增加阈值泵浦功率；泵浦功率与脉冲重复率和输出功率近似成线性增加，增大泵浦功率可以压缩脉宽。并通过实验验证了理论分析的正确性。     

6.5-ns actively Q-switched Nd:YVO_4 laser operating at 1.34 μm

With a plano-concave cavity,diode-pumped continuous-wave(CW) and actively Q-switched Nd:YVO4 laser operating at 1.34 μm is demonstrated.Maximum CW output power of 4.76 W and Q-switched average output power of 2.64 W are obtained with output coupler(transmission T = 3.9%).For the Q-switching operation,the theoretically calculated pulse energy and pulse width,with a pulse repetition frequency(PRF) range of 5-40 kHz,coincide with the experimental results.With a T = 11.9% output coupler,the maximum peak power of 24.3 kW and minimum pulse width of 6.5 ns are obtained when the PRF is 10 kHz.To the best of our knowledge,this is the shortest actively Q-switched pulse duration ever obtained in a 1.3-μm Nd-doped vanadate laser.     

全光纤调Q激光器腔内脉宽压缩技术

为了压缩MOPA全光纤调Q激光器脉冲宽度,对谐振腔基本参数进行了研究。首先,根据速率方程理论推导出脉冲宽度的表达式,通过数值解建立表达式参数与脉冲宽度的关系。然后,分析增益光纤长度、腔镜输出透过率、Q开关性能等谐振腔基本参数对全光纤调Q种子源输出脉冲宽度的影响并通过实验来逐一验证结果。最后,通过优化的参数搭建全光纤调Q激光器,在重复频率为20 kHz时,得到脉冲宽度为54 ns、平均功率为0.86 W的种子激光输出。在重复频率为100 kHz时,对脉宽142 ns、平均功率为1.66 W的种子光进行预放大和功率主放大,最终得到平均功率120 W、脉宽180 ns、光谱宽度为0.67 nm的稳定脉冲激光输出。通过提升AOM性能、减小增益光纤长度等参数优化方式构建调Q光纤激光器,能有效压缩谐振腔内脉冲宽度。     

Continuous-Wave and Actively Q-Switched Diode-Pumped Er:LuAG Ring Laser at 1650 nm

We demonstrate a cw and actively Q-switched Er.LuAG laser resonantly dual-end-pumped by 1532 nm fibrecoupled laser diodes.A maximum cw output power of 1.9W at 1650.3nm is obtained at a pump power of 25.5 W,corresponding to a slope efficiency of 43.3%.In the Q-switched regime,the maximum pulse energy of3.51 mJ is reached at a pulse repetition rate of 100 Hz,a pulse duration of 90.5 ns and a pump power of 25.5 W.At the repetition rate of 400 Hz,the output energy is 2.12 mJ,corresponding to a pulse duration of 125.4 ns.     

Diode-pumped simultaneously Q-switched and mode-locked Nd:GdVO<Subscript>4</Subscript>/LBO red Laser

A diode-end-pumped simultaneously Q-switched and mode-locked intracavity frequency doubled Nd:GdVO₄/LBO red laser with an acousto-optic Q-switch was realized. The maximum red laser output power of 250 mW was obtained at the incident pump power of 8.3 W and the repetition rate of 10 kHz. At 5 kHz, the maximum mode-locking modulation depth of about 80% was achieved with the Q-switched pulse width of 440 ns. The red mode-locked pulse inside the Q-switched pulse had a repetition rate of 115 MHz, its average pulse width was estimated to be about 350 ps.     

Room-temperature cw and pulsed operation of a diode-end-pumped Tm:YAP laser

We report the continuous-wave and acousto-optical Q-switched operation of a diode-end-pumped Tm:YAP laser. Continuous-wave output power of 3.5 W at 1.99 μm was obtained under the absorbed pump power of 14 W. Under Q-switched laser operation, the average output power increased from 1.57 W to 2.0 W, with an absorbed pump power of 12.6 W, as the repetition rate increased from 1 kHz to 10 kHz. The maximum Q-switched pulse energy was 1.57 mJ with a repetition rate of 1 kHz. The minimum pulse width was measured to be about 80 ns, corresponding to a peak power of 19.6 kW. PACS 42.55.Rz; 42.55.Xi; 42.60.Gd     

Single-frequency, Q-switched Ho:YAG laser at room temperature injection-seeded by two F-P etalons-restricted Tm, Ho:YAG laser

We demonstrated a 1.91 μm pumped, injection-seeded Q-switched Ho:YAG laser operating at room temperature. By inserting two Fabry-Perot etalons into the laser cavity, single-frequency Tm, Ho:YAG seed lasing was achieved at a wavelength of 2090.9 nm, with a typical output power of 60 mW. Single-frequency, nearly transform-limited Q-switched operation of the Ho:YAG laser was achieved by injection seeding. The output energy of the single-frequency Q-switched pulse is 7.6 mJ, with a pulse width of 132 ns and a repetition rate of 100 Hz. We measured the pulse spectrum, half-width of which was 3.5 MHz, by a heterodyne technique.     

High-energy directly diode-pumped Q-switched 1617 nm Er:YAG laser at room temperature

We describe high-energy Erbium-doped yttrium aluminum garnet (Er:YAG) lasers operating at 1617?nm, resonantly pumped using 1532?nm fiber-coupled laser diodes. A maximum continuous wave output power of 4.3?W at 1617?nm was achieved with an output coupler of 20% transmission under incident pump power of 29.7?W, resulting in an optical conversion of 14% with respect to the incident pump power. In Q-switched operation, the pulse energy of 11.8?mJ at 100?Hz pulse repetition frequency and 81?ns pulse duration was obtained. This energy is the highest pulse energy reported for a directly diode-pumped Q-switched Er:YAG laser operating at 1617?nm.     

LD-pumped passively Q-switched Nd:GGG laser at 1062 nm with a GaAs saturable absorber

we have experimentally studied the passively Q-switched performance of a diode-pumped Nd:GGG laser at 1062 nm with a GaAs saturable absorber, in the experiment when the pumped power was 9.8 W, the maximum CW output power of 5.1 W was obtained. The optical conversion efficiency and the slop efficiency were 52 and 53%, respectively. The threshold was 0.9 W. In the passively Q-switched regime, we get the average output power of 0.93 W. The shortest pulse width and pulse repetition rate were 7 ns and 188 kHz, respectively.     

Simultaneous mode locking in an acousto-optic Q-switched Nd:LuVO4 laser

Simultaneous mode locking had been obtained in acousto-optic Q-switched Nd:LuVO₄ laser by using a Z-type cavity. Pulses with great average output power and narrow pulse width were observed in our experiment. The modulation depth is nearly 90% and the width of Q-switched envelope is about 70 ns, and both maintained constant with the increase of pump power. The maximum average output power of 1.83 W was obtained when the incident pump power was 6.78 W and the Q-switched envelop repetition frequency was 30 kHz. Also the average pulse width of the mode locking among the Q-switched envelope is estimated to be about 200 ps.     

Passively Q-switched microchip Er, Yb:YAl3(BO3)4 diode-pumped laser

We report, for the first time to our knowledge, a diode-pumped cw and passively Q-switched microchip Er, Yb:YAl(3)(BO(3))(4) laser. A maximal output power of 800 mW at 1602 nm in the cw regime was obtained at an absorbed pump power of 7.7 W. By using Co(2+):MgAl(2)O(4) as a saturable absorber, a TEM(00)-mode Q-switched average output power of 315 mW was demonstrated at 1522 nm, with pulse duration of 5 ns and pulse energy of 5.25 μJ at a repetition rate of 60 kHz.     

Q-switched and mode-locked diode-pumped Nd:YVO4 laser with an intracavity composite semiconductor saturable absorber

We have demonstrated a passively Q-switched and mode-locked Nd:YVO₄ laser with an intracavity composite semiconductor saturable absorber (ICSSA). Stable Q-switched and mode-locked pulses with Q-switched envelope pulse duration of 180 ns and pulse repetition rate of 72 KHz have been obtained. The maximum average output power was 1.45 W at 8 W incident pump power. The repetition rate of the mode-locked pulses inside the Q-switched envelope was 154 MHz. Experimental results revealed that this ICSSA was suitable for Q-switched and mode-locked solid-state lasers.     

LD泵浦Nd∶GdVO4/GaAs被动调Q激光器研究

报道了采用大功率半导体激光器端面泵浦Nd∶GdVO4晶体,利用GaAs晶片兼作饱和吸收被动调Q元件和输出耦合镜,实现了1.06 μm激光的被动调Q运转.在泵浦功率为13.9 W时,获得最高平均输出功率为3.6 W,脉冲宽度为252 ns,单脉冲能量为27 μJ以及峰值功率为107 W的激光脉冲.     

AlGaInAs半导体饱和吸收体调Q特性的理论与实验研究究

利用通过金属化学气相沉积法长成的AlGaInAs饱和吸收体,对808 nm LD泵浦的Nd:YVO₄键合晶体进行被动调Q,获得了波长为1.06 mm的激光脉冲,测量了脉冲能量、脉冲宽度、脉冲重复率随泵浦功率的变化。当泵浦功率为10.57 W时,激光平均输出功率为3.45 W,斜效率为39 %,重复频率达到最大值101 kHz。当泵浦功率为8.07 W时,脉冲宽度达到最小值1.76 ns。利用速率方程对该激光器进行理论分析,计算出输出脉冲能量、峰值功率、脉冲宽度和重复频率的理论值,实验结果和理论结果基本一致。     

Efficient continuous wave and Q-switched operation of a dual-end-pumped <Emphasis Type="Italic">c</Emphasis>-cut Tm:YAP laser

An efficient continuous wave (CW) and Q-switched c-cut Tm:YAP laser is reported in this letter. With the dual-end-pumped convex-concave resonator, CW output power up to 13.6 W at 1.99 μm was obtained under a total incident pump power of 50 W. The corresponding slope efficiency was 34.3% and conversion efficiency was 27.2%. The active Q-switched operation of the laser had an average output power of 12.5 W at 10 kHz pulse repetition frequency, with a minimum pulse width of 126 ns. With 6 kHz pulse repetition frequency, the maximum pulse energy of 1.6 mJ was obtained. In addition, using the Tm:YAP laser as a pumping source for gain-switched Cr:ZnSe laser, as much as 4 W output power in the wavelength range of 2.5–2.6 μm was obtained.     

Simultaneous Q switching and mode locking with narrow envelope width in a microchip Nd:YVO4 laser with a composite semiconductor absorber

By using a composite semiconductor absorber and an output coupler, we demonstrated a Q-switched and mode-locked diode-pumped microchip Nd:YVO₄ laser. With a 350-μm-thick crystal, the width of the Q-switched envelope was as short as 12 ns; the repetition rate of the mode-locked pulses inside the Q-switched pulse was more than 10 GHz. The average output power was 335 mW at a maximum pump power of 1.6 W. Q-switched envelope widths of 21 and 31 ns were also achieved with crystals 0.7 and 1.0 mm thick, respectively.