Gas-phase combination reactions of SF4 and SF5 with F in plasmas of SF6

Reactions of both SF₄ and SF₅ with F have been studied at 295 K in a gas-flow reactor sampled by a mass spectrometer. The rate coefficient for the combination reaction of F with SF₄ to produce SF₅ was found to increase from (0.9 to 3.0)×10^–12 cm³ s^–1 when the helium bath gas number density was increased from (2 to 26)×10¹⁶ cm^–3. The values obtained here are three orders of magnitude higher than a recent estimate of the high-pressure value based on the modelling of photochemical studies. The experimental results have been compared with RRKM and master equation calculations in which a simplified Gorin model has been used to determine the structure of the transition state. These calculations show that reasonable agreement can be obtained between the experimental data and the calculation if a small (2 KJ/mol) activation energy is assumed. The rate coefficient for the reaction between SF₅ and F to produce SF₆ was found to be independent of helium bath gas number density within the range given above. The value obtained for the rate coefficient was 9×10^–12 cm³ s^–1 with an uncertainty of a factor of 2. This value is close to that of 1×10^–11 cm³ s^–1 computed from the simplified Gorin model and to the value of 1.7×10^–11 cm³ s^–1 deduced from modelling of photochemical experiments.     

Rate Coefficient for Self-Association Reaction of CF2 Radicals Determined in the Afterglowof Low-Pressure C4F8 Plasmas

We have analyzed decay kinetics of CF₂ radicals in the afterglow of low-pressure, high-density C₄F₈ plasmas. The decay curve of CF₂ density has been approximated by the combination of first- and second-order kinetics. The surface loss probability evaluated from the frequency of the first-order decay process has been on the order of 10^–4. This small surface loss probability has enabled us to observe the second-order decay process. The mechanism of the second-order decay is self-association reaction between CF₂ radicals (CF₂+CF₂C₂F₄). The rate coefficient for this reaction has been evaluated as (2.6–5.3)×10^–14 cm³/s under gas pressures of 2 to 100 mTorr. The rate coefficient was found to be almost independent of the gas pressure and has been in close agreement with known values, which are determined in high gas pressures above 1 Torr.     

Gas-phase reactions of SF5, SF2, and SOF with O(3 P): Their significance in plasma processing

Reactions of both SF₅ and SF₂ with O(³ P) and molecular oxygen have been studied at 295 K in a gas flow reactor sampled by a mass spectrometer. For reactions with O(³ P), rate coefficients of (2.0±0.5)×10^–11 cm³ s^–1 and (10.8±2.0)×10^–11 cm³ s^–1 were obtained for SF₅ and SF₂ respectively. The rate coefficients for reactions with O₂ are orders of magnitude lower, with an estimated upper limit of 5×10^–16 cm³ s^–1 for both SF₅ and SF₂. Reaction of SF₂ with O(³ P) leads to the production of SOF which then reacts with O(³ P) with a rate coefficient of (7.9±2.0)×10^–11 cm³ s^–1. Both SO and SO₂ are products in the reaction sequence initiated by reaction between SF₂ and O(³ P). Although considerable uncertainty exists for the heat of formation of SOF, it appears that SO arises only from reaction between SOF and O atoms which is also the source of SO₂. These results are discussed in terms of a reaction scheme proposed earlier to explain processes occurring during the plasma etching of Si in SF₆/O₂ plasmas. A comparison between the results obtained here and those reported earlier for reactions of both CF₃ and CF₂ with O and O₂ shows that there is a marked similarity in the free radical chemistry which occurs in SF₆/O₂ and CF₄/O₂ plasmas.     

Gas-phase reactions in plasmas of SF6 with O2 in He

Processes which occur in microwave discharges of dilute mixtures of SF₆ and O₂ in He have been examined using a flow reactor sampled by a mass spectrometer. Two classes of experiments were performed. In the first set of experiments, mixtures containing 6×10¹¹ cm^–3 SF₆, 6×10¹⁶ cm^–3 He, and O₂ in the range (0–3.6)×10¹³ cm^–3 were passed through a 20-W 2450-MHz microwave discharge. The gas mixtures arriving at a sample point downstream from the discharge were examined for SF₆, SF₄, SOF₂, SOF₄, SO₂F₂, SO₂, F, and O. In the second class of experiments, rate coefficients were measured for the reactions of SF₄ with O and O₂ and for the reaction of SF with O. The rate coefficient for the reaction of SF with O was found to be (4.2±1.5)×10^–11 cm^–3 s^–1. SF₄ was found to react so slowly with both oxygen atoms and oxygen molecules that only upper limits could be placed on the rate coefficients for these reactions. These values were 2×10^–14 cm³ s^–1 and 5×10^–15 cm³ s^–1 for reactions with O and O₂ respectively. The observed distribution of products from the discharged mixtures is discussed in terms of the measured rate coefficients.     

Gas-phase reactions in plasmas of SF6 with O2: Reactions of F with SOF2 and SO2 and reactions of O with SOF2

The plasma chemistry of SF₆/O₂ mixtures is particularly complicated because of the large number of possible reactions. Over a wide range of conditions, products including SF₄, SOF₄, SOF₂, and SO₂F₂ can be formed but thre is considerable uncertainty about the major reactions which contribute to the formation of these species. In this work reactions of oxygen atoms with SOF₂ and fluorine atoms with SOF₂ and SO₂ have been studied in order to determine the principal sources of SO₂F₂ in these plasmas. Reactions were studied at 295 K in a gas flow reactor sampled by a mass spectrometer. No reaction could be detected between oxygen atoms and SOF₂, which for the conditions employed, means that the upper limit for the reaction rate coefficient is 1×10^–14 cm³ sec^–1. The reaction of fluorine atoms with SOF₂ was studied with the helium bath gas number density ranging from 3.1×10¹⁶ to 2.0×10¹⁷ cm^–3. Within this range the rate coefficient increased with increasing [He] from (4.1 to 10.8)×10^–14 cm³ sec^–1. SO₂ was found to react with fluorine atoms with a rate coefficient which appeared to be independent of the helium bath gas number density over the range given above. The possibility that this reaction occurred entirely on the walls of the reactor is discussed.     

UV absorption spectrum of CF3CFClO2 and kinetics of the self reaction of CF3CFCl and CF3CFClO2 and the reactions of CF3CFClO2 with NO and NO2

The ultraviolet absorption spectrum of CF₃CFClO₂ and the kinetics of the self reactions of CF₃CFCl and CF₃CFClO₂ radicals and the reactions of CF₃CFClO₂ with NO and NO₂ have been studied in the gas phase at 295 K by pulse radiolysis/transient UV absorption spectroscopy. The UV absorption cross section of CF₃CFCl radicals was measured to be (1.78 ± 0.22) × 10^?18 cm² molecule^?1 at 220 nm. The UV spectrum of CF₃CFClO₂ radicals was quantified from 220 nm to 290 nm. The absorption cross section at 250 nm was determined to be (1.67 ± 0.21) × 10^?18 cm² molecule^?1. The rate constants for the self reactions of CF₃CFCl and CF₃CFClO₂ radicals were (2.6 ± 0.4) × 10^?12 cm³ molecule^?1 s^?1 and (2.6 ± 0.5) × 10^?12 cm³ molecule^?1 s^?1, respectively. The reactivity of CF₃CFClO₂ radicals towards NO and NO₂ was determined to (1.5 ± 0.6) × 10^?11 cm³ molecule^?1 s^?1 and (5.9 ± 0.5) × 10^?12 cm³ molecule^?1 s^?1, respectively. Finally, the rate constant for the reaction of F atoms with CF₃CFClH was determined to (8 ± 2) × 10^?13 cm³ molecule^?1 s^?1. Results are discussed in the context of the atmospheric chemistry of HCFC-124, CF₃CFClH. © 1994 John Wiley & Sons, Inc.     

Experimental and Theoretical Studies of a Pulsed Microwave Excited Ar/CF4 Plasma

The present work deals with a pulsed microwave discharge in an Ar/CF ₄ gas mixture under a low pressure (1–10 mbar). The discharge chamber developed has a cylindrical geometry with a coupling window alternatively made of quartz or alumina. The setup allows one to investigate the plasma–wall interactions (here etching of the quartz window) and the ignition process of the pulsed microwave plasma. Microwave pulses with a duration of 50–200 s and repetition rate between 1 and 10 kHz are typical for the experiments. The space-time behavior of the fluorine number density in the discharge has been investigated experimentally by optical actinometry. The discharge kinetics is modeled using electron-transport parameters and rate coefficients derived from solutions of the Boltzmann equation. Together with the solution of the continuity and electron balance equations and the rate equations describing the production of CF _x (x=2, 3, 4) radicals and F atoms, a good agreement between experimental and theoretical data can be achieved.     

A model for the etching of Si in CF4 plasmas: Comparison with experimental measurements

A model has been developed to describe the chemistry which occurs in CF₄ plasmas and the etching of Si both in the plasma and downstream. One very important feature of this model is that for discharge residence times which vary by more than an order of magnitude, the amount of CF₄ consumed is low and relatively constant. This is because the gas-phase combination reactions between F and both CF₃ and CF₂ lead to the rapid reforming of CF₄. The model predicts that CF₂ is a major species in the gas phase and that the [F] detected as a sample point downstream is a very sensitive function of [CF₂]/[F] in the discharge. Even though the calculations show that [F] in the discharge varies only slightly over the wide range of experimental conditions considered, large variations in [F] at the sample point occur because the [CF₂]/[F] ratio in the discharge changes. The concentrations of C₂F₆ and SiF₄ are predicted to within a factor of 2 over a very wide range of experimental conditions. This confirms the importance of gas-phase free radical reactions in the etching of Si.     

Kinetics and mechanism in the decomposition of NH3 in a radio-frequency pulse discharge

Studies of time-resolved absorption spectra of transient species in the decomposition of NH₃ by an r.f. pulse discharge together with product analysis showed that the major radical formed was NH at concentrations of the order of 10^–6 mol dm^–3 (10⁵ molec. cm^–3). Possible mechanisms for the formation of the radical during the discharge and its decay following pulse cut-off were tested by computer simulation of the kinetic data. Following zero-order formation with rate coefficient 0.19±0.03 mol dm^–3 s^–1, the decay was second order in NH with rate coefficient 2.1±0.5×10⁹ mol^–1 dm³ s^–1 both for pure NH₃ and where NH₃/rare gas mixtures were investigated. The kinetic data are consistent with NH removal in a nonassociative radical-radical reaction proceeding via a short-lived collision complex, probably 2NH N₂H₂ N₂ + H₂.     

Tunable Diode Laser Absorption Studies of Hydrocarbons in RF Plasmas Containing Hexamethyldisiloxane

Tunable infrared diode laser absorption spectroscopy has been used to detect the methyl radical and three stable molecules, CH₄, C₂H₂ and C₂H₆, in radio frequency plasmas (f=13.56 MHz) containing hexamethyldisiloxane (HMDSO). The methyl radical concentration and the concentration of the stable hydrocarbons, produced in the plasma, have been measured in pure HMDSO discharges and with admixtures of Ar, while discharge power (P=20–200 W), total gas pressure (p=0.08–0.6 mbar), gas mixture and total gas flow rate (=1–10 sccm) were varied. The methyl radical concentration was found to be in the range of 10¹³ molecules cm^-3, while methane and ethane are the dominant hydrocarbons with concentrations of 10¹⁴–10¹⁵ mol cm^-3. Conversion rates to the measured stable hydrocarbons (RC(C_xH_y): 2×10¹²–2×10¹⁶ molecules J^-1 s^-1) could be estimated in dependence on power, flow, mixture and pressure. Under the used experimental conditions a maximum deposition rate of polymer layers of about 400 nm min^-1 has been found.     

Kinetics and mechanism in the decomposition of CCl4 in a radio-frequency pulse discharge

In the decomposition of CCl₄ in an r.f. pulse discharge the observation of time-resolved absorption spectra of the CCl radical allowed concentration measurements and a kinetic and mechanistic investigation of the system. Kinetic spectroscopy and end product analysis, with computer simulation of proposed mechanisms, indicates that the major decomposition reaction is CCl₄»CCl+3Cl (Cl₂+Cl), with a minor contribution from CCl₄»CCl₂+2Cl. Radical concentrations were of the order of 10^–7 mol dm^–3 (10¹⁴ molec. cm^–3). CCl removal was kinetically second order with a rate coefficient value of (3.7±8)×10¹⁰ mol^–1 dm^–3 s^–1 at 295±3 K at gas pressure 0.1 torr.     

Structure and electronic structure of [(CF3)2PN]2NVCl2, a molecule involving a planar six-membered ring (N3P2V)

Summary The SCF method is applied to determine the (gas phase) structure of [(CF₃)₂PN]₂NVCl₂, which agrees with the solid-state X-ray structure within typical errors of 2 pm and 2° in bond distances and angles. The electronic structure of atoms forming the ring is best described in terms of divalent N^– and tetravlent P⁺ with appreciable declocalization of nitrogen lone pairs into low-lying empty orbitals of neighbouring atoms P and V. No evidence for aromaticity of the ring system is found.     

Rate Constant for the Reaction of the OH-Radical with CH2F2

The rate constant value of k ₁ = (6.05 ± 0.20)×10⁹ cm³ mol^–1 s^–1 (with ± 1 error) has been determined for the reaction OH + CH₂F₂ (1) by applying the discharge-flow/resonance-fluorescence method at 298 K.     

Etching Efficiency for Si and SiO2 by CF+x,F+, and C+ Ion Beams Extracted from CF4 Plasmas

Fluorocarbon (CF⁺ _x), fluorine (F⁺), and carbon (C⁺) ion beams with highcurrent density (50i<800 A/cm²) were irradiated to Si and SiO₂surfaces to investigate the influence of the ion species on the etchingefficiency. The ion beams were extracted from magnetized helicon-wave CF₄plasmas operated in pulsed modes. The CF⁺ ₃ beam had the largest etchingefficiency for Si at the same beam energy. When the same data weresummarized as a function of the momentum of the incident ion beam, thedifference in the etching efficiency became small, although the CF⁺ ₃ beamstill had a slightly larger etching efficiency. On the other hand, theetching efficiency for SiO₂ by the CF⁺ ₃ beam was larger than that by theother ion beams in the low-momentum region. In addition, in the low-momentumregion, the etching efficiency for SiO₂ by CF⁺ ₃ was larger than that forSi. These results suggest the high chemical reactivity of CF⁺ ₃ with SiO₂,leading to the high etching selectivity of SiO₂ over underlying Si in thefabrication of semiconductor devices.     

Use of CF3,Br/Al,discharges for reactive ion etching of III-V semiconductors

The reactive ion etching of GaAs, InP, InGaAs, and InAlAs in CF₃Br/Ar discharges was investigated as a function of both plasma power density (0.56-1.3 W - cm^–2) and total pressure (10-40 mTorr) The etch rate of GaAs in 19CF₃Br:1Ar discharges at 10 m Torr increases linearly with power density, from 600 Å min^–1 at 0.56 W · cm^–2, to 1550 Å · min at 1.3 W · cm^–2. The in-based materials show linear increases in etch rates only for power densities above – 1.0 W · cm^–2. These etch rates are comparable to those obtained with CCI₂F₂:O₂ mixtures under the same conditions. Smooth surface morphologies and vertical sidewalls are obtained over a wide range of plasma parameters. Reductions in the near-surface carrier concentration in n-type GaAs are evident for etching with power densities of >0.8 W cm^–2, due to the introduction of deep level trapping centers. At 1.3 W· cm^–2, the Schottky barrier height of TiPtAu contacts on GaAs is reduced from 0.74 to 0.53 eV as a result of this damage, and the photoluminescent intensity from the material is degraded. Alter RIE, we detect the presence of both F and Br on the surface of all of the semiconductors. This contamination is worse than with CCl₂F₂-based mixtures. High-power etching with CF₃Br/Ar together with Al-containing electrodes can lead to the presence of a substantial layer of aluminum oxide on the samples if the moisture content in the reactor is appreciable.     

Aspects of the chemistry of SF6/O2 plasmas

The production ofSOF ₄ initiated by the reaction of F atoms withSOF ₂ has been studied in a gas-flow reactor at 295 K for helium bath gas number densities in the range (3.0–27.0)×10¹⁶ cm^–3. The effect of O atoms on the formation ofSOF ₄ has been analyzed in terms of the competing reactionsSOF ₃+FSOF₄ andSOF ₃+OSO ₂ F ₂+F. This analysis leads to the conclusion that the rate coefficients for these two processes are equal within an uncertainty of about 50%. Furthermore, both experiment and calculations indicate that the rate coefficient for reactions between F atoms andSOF ₃ is close to its high-pressure limit under the conditions employed. The experiments set a lower limit on this rate coefficient of 5×10^–11 cm³ s^–1, while calculations based on unimolecular rate theory suggest that it may be greater than 1×10^–10 cm³ s^–1. These results make it clear that the two reactions shown above cannot explain the relative abundances ofSOF ₄ andSO ₂ F ₂ which are observed inSF ₆/O ₂ plasmas. This suggests thatSF ₂ is a major precursor in the sequence of reactions following the dissociation ofSF ₆.     

Gas-phase reactions of CF2 with O(3P) to produce COF: Their significance in plasma processing

Reactions between CF₂ and O(³P) have been studied at 295 K in a gas flow reactor sampled by a mass spectrometer. The major reaction for CF₂ has been found to be $$CF_2 + O \to COF + F$$ with $$CF_2 + O \to CO + 2F(F_2 )$$ more than a factor of three slower. The rate coefficient for all loss processes for CF₂ on reaction with O is (1.8±0.4)×10^?11 cm³ s^?1. The COF produced in (18) undergoes a fast reaction with O to produce predominantly CO₂. $$COF + O \to CO_2 + F$$ It is uncertain from the results whether or not $$COF + O \to CO + FO$$ occurs, but in any event (19) is the major route. The rate coefficient for the loss of COF in this system [i.e., the combined rate coefficients for (19) and (20)] is (9.3±2.1)×10^?11 cm³ s^?1. Stable product analysis reveals that for each CF₂ radical consumed, the following distribution of stable products is obtained: COF₂ (0.04±0.02), CO (0.21±0.04), and CO₂ (0.75±0.05). Thus COF₂, which we assume is produced via $$CF_2 + O \xrightarrow{M} COF_2$$ is a very minor product in this reaction sequence. The measured rate coefficients demonstrate that reactions (18) and (19) are important sources of F atoms in CF₄/O₂ plasmas.     

Rate constants for the gas‐phase reaction of CF3CF2CF2CF2CF2CHF2 with OH radicals at 250–430 K

The rate constants k₁ for the reaction of CF₃CF₂CF₂CF₂CF₂CHF₂ with OH radicals were determined by using both absolute and relative rate methods. The absolute rate constants were measured at 250–430 K using the flash photolysis–laser‐induced fluorescence (FP‐LIF) technique and the laser photolysis–laser‐induced fluorescence (LP‐LIF) technique to monitor the OH radical concentration. The relative rate constants were measured at 253–328 K in an 11.5‐dm³ reaction chamber with either CHF₂Cl or CH₂FCF₃ as a reference compound. OH radicals were produced by UV photolysis of an O₃–H₂O–He mixture at an initial pressure of 200 Torr. Ozone was continuously introduced into the reaction chamber during the UV irradiation. The k₁ (298 K) values determined by the absolute method were (1.69 ± 0.07) × 10^?15 cm³ molecule^?1 s^?1 (FP‐LIF method) and (1.72 ± 0.07) × 10^?15 cm³ molecule^?1 s^?1 (LP‐LIF method), whereas the K₁ (298 K) values determined by the relative method were (1.87 ± 0.11) × 10^?15 cm³ molecule^?1 s^?1 (CHF₂Cl reference) and (2.12 ± 0.11) × 10^?15 cm³ molecule^?1 s^?1 (CH₂FCF₃ reference). These data are in agreement with each other within the estimated experimental uncertainties. The Arrhenius rate constant determined from the kinetic data was K₁ = (4.71 ± 0.94) × 10^?13 exp[?(1630 ± 80)/T] cm³ molecule^?1 s^?1. Using kinetic data for the reaction of tropospheric CH₃CCl₃ with OH radicals [k₁ (272 K) = 6.0 × 10^?15 cm³ molecule^?1 s^?1, tropospheric lifetime of CH₃CCl₃ = 6.0 years], we estimated the tropospheric lifetime of CF₃CF₂CF₂CF₂CF₂CHF₂ through reaction with OH radicals to be 31 years. © 2003 Wiley Periodicals, Inc. Int J Chem Kinet 36: 26–33, 2004     

Spin-spin coupling constant 3 J H,F as a reliable criterion for recognition of individual regioisomeric and tautomeric pairs of H(CF2)2-containing isoxazoles and pyrazoles

The spin-spin coupling constant ³ J _H,F of the H(CF₂)₂ group varies within 1.6—3.5 Hz for 5-R^F- and 3.8—4.5 Hz for 3-R^F-isoxazoles and pyrazoles in CDCl₃ and can serve as a reliable criterion for recognition of regioisomeric and tautomeric structures of H(CF₂)₂-containing heterocyclic compounds.     

Direct dynamics studies for the reactions of CF3CHFCF3 and CF3CF2CHF2 with H atoms

The rate constants of the hydrogen abstraction reactions of CF₃CHFCF₃ + H (R1) and CF₃CF₂CHF₂ + H (R2) have been calculated by means of the dual-level direct dynamics method. Optimized geometries and frequencies of stationary points and extra points along the minimum-energy path (MEP) are obtained at the MPW1K/6-311+G(d,p) level, and the classical energetic information is further corrected with the interpolated single-point energy (ISPE) approach by the G3(MP2) level of theory. Using the canonical variational transition state theory (CVT) with small-curvature tunneling corrections (SCT), the rate constants are evaluated over a wide temperature range of 200-2000 K. The calculated CVT/SCT rate constants are in good agreement with available experimental values. It is found that the variational effect is very small and almost negligible over the whole temperature region. However, the small-curvature tunneling correction plays an important role in the lower temperature range. Furthermore, the heats of formation of species CF₃CF₂CHF₂ (SC₁ or SC₂) and CF₃CF₂CF₂ are studied using isodesmic reactions to further elucidate the thermodynamic properties.