Gas-phase reactions in plasmas of SF6 with O2 in He

Processes which occur in microwave discharges of dilute mixtures of SF₆ and O₂ in He have been examined using a flow reactor sampled by a mass spectrometer. Two classes of experiments were performed. In the first set of experiments, mixtures containing 6×10¹¹ cm^–3 SF₆, 6×10¹⁶ cm^–3 He, and O₂ in the range (0–3.6)×10¹³ cm^–3 were passed through a 20-W 2450-MHz microwave discharge. The gas mixtures arriving at a sample point downstream from the discharge were examined for SF₆, SF₄, SOF₂, SOF₄, SO₂F₂, SO₂, F, and O. In the second class of experiments, rate coefficients were measured for the reactions of SF₄ with O and O₂ and for the reaction of SF with O. The rate coefficient for the reaction of SF with O was found to be (4.2±1.5)×10^–11 cm^–3 s^–1. SF₄ was found to react so slowly with both oxygen atoms and oxygen molecules that only upper limits could be placed on the rate coefficients for these reactions. These values were 2×10^–14 cm³ s^–1 and 5×10^–15 cm³ s^–1 for reactions with O and O₂ respectively. The observed distribution of products from the discharged mixtures is discussed in terms of the measured rate coefficients.     

Gas-phase reactions of SF5, SF2, and SOF with O(3 P): Their significance in plasma processing

Reactions of both SF₅ and SF₂ with O(³ P) and molecular oxygen have been studied at 295 K in a gas flow reactor sampled by a mass spectrometer. For reactions with O(³ P), rate coefficients of (2.0±0.5)×10^–11 cm³ s^–1 and (10.8±2.0)×10^–11 cm³ s^–1 were obtained for SF₅ and SF₂ respectively. The rate coefficients for reactions with O₂ are orders of magnitude lower, with an estimated upper limit of 5×10^–16 cm³ s^–1 for both SF₅ and SF₂. Reaction of SF₂ with O(³ P) leads to the production of SOF which then reacts with O(³ P) with a rate coefficient of (7.9±2.0)×10^–11 cm³ s^–1. Both SO and SO₂ are products in the reaction sequence initiated by reaction between SF₂ and O(³ P). Although considerable uncertainty exists for the heat of formation of SOF, it appears that SO arises only from reaction between SOF and O atoms which is also the source of SO₂. These results are discussed in terms of a reaction scheme proposed earlier to explain processes occurring during the plasma etching of Si in SF₆/O₂ plasmas. A comparison between the results obtained here and those reported earlier for reactions of both CF₃ and CF₂ with O and O₂ shows that there is a marked similarity in the free radical chemistry which occurs in SF₆/O₂ and CF₄/O₂ plasmas.     

Aspects of the chemistry of SF6/O2 plasmas

The production ofSOF ₄ initiated by the reaction of F atoms withSOF ₂ has been studied in a gas-flow reactor at 295 K for helium bath gas number densities in the range (3.0–27.0)×10¹⁶ cm^–3. The effect of O atoms on the formation ofSOF ₄ has been analyzed in terms of the competing reactionsSOF ₃+FSOF₄ andSOF ₃+OSO ₂ F ₂+F. This analysis leads to the conclusion that the rate coefficients for these two processes are equal within an uncertainty of about 50%. Furthermore, both experiment and calculations indicate that the rate coefficient for reactions between F atoms andSOF ₃ is close to its high-pressure limit under the conditions employed. The experiments set a lower limit on this rate coefficient of 5×10^–11 cm³ s^–1, while calculations based on unimolecular rate theory suggest that it may be greater than 1×10^–10 cm³ s^–1. These results make it clear that the two reactions shown above cannot explain the relative abundances ofSOF ₄ andSO ₂ F ₂ which are observed inSF ₆/O ₂ plasmas. This suggests thatSF ₂ is a major precursor in the sequence of reactions following the dissociation ofSF ₆.     

By-product formation in spark breakdown of SF6/O2 mixtures

The yields of SOF₄, SO₂F₂, SOF₂, and SO₂ have been measured as a function of O₂ content in SF₆/O₂ mixtures, following spark discharges. All experiments were made at a spark energy of 8.7 J/spark, a total pressure of 133 kPa, and for O₂ additions of 0, 1, 2, 5, 10, and 20% to SF₆. Even for the case of no added O₂, trace amounts of O₂ and H₂O result in the formation of the above by-products. However, addition of O₂ significantly increases the yields of SOF₄ and SO₂F₂, while SOF₂ is only slightly affected. The net yields for SOF₄ and SO₂F₂ formation range from 0.18×10^–9 and 0.64×10^–10 mol·J^–1, respectively, at 1% O₂ content to 10.45×10^–9 and 7.15×10^–10 mol·J^–1, respectively, at 20% O₂ content. The mechanism for SOF₄ production appears to involve SF₄, an important initial product of SF₆, as a precursor. Comparison of the SOF₄ and SO₂F₂ yield from spark discharges (arc and corona) shows that the yields from other discharges (arc and corona) shows that the yields can vary by at least three orders of magnitude, depending on the type of discharge and on other discharge parameters.     

Gas-phase reactions of CF3 and CF2 with atomic and molecular fluorine: Their significance in plasma etching

Reaction rate coefficients have been measured at 295 K for both CF₃ and CF₂ with atomic and molecular fluorine. The reaction between CF₃ and F was studied over a gas number density range of (2.4–23)×10¹⁶ cm^–3 with helium as the bath gas. The measured rate coefficient increased from (1.1–1.7)×10^–11 cm³ s^–1 as the gas number density increased over this range. In contrast to this relatively small change in rate coefficient with gas number density, the rate coefficient for CF₂+F increased from (0.4–2.3)×10^–12 cm³ s^–1 as the helium gas number density increased from (3.4–28.4)×10¹⁶ cm^–3. Even for the highest bath gas number density employed, the rate coefficient was still more than an order of magnitude lower than earlier measurements of this coefficient performed at comparable gas number densities.Both these association reactions are examined from the standpoint of the Gorin model for association of radicals and use is made of unimolecular dissociation theory to examine the expected dependence on gas number density. The calculations reveal that CF₃+F can be explained satisfactorily in these terms but CF₂+F is not well described by the simple Gorin model for association.CF₃ was found to react with molecular fluorine with a rate coefficient of (7±2)×10^–14 cm³ s^–1 whereas only an upper limit of 2×10^–15 cm³ s^–1 could be placed on the rate coefficient for the reaction between CF₂ and F₂. The values obtained for this set of reactions mean that the reaction between CF₃ and F will play an important role in plasmas containing CF₄. The high rate coefficient will mean that, under certain conditions, this particular reaction will control the amount of CF₄ consumed. On the other hand, the much lower rate coefficient for reactions between CF₂ and F means that CF₂ will attain much higher concentrations than CF₃ in plasmas where these combination reactions are dominant.     

Gas-phase combination reactions of SF4 and SF5 with F in plasmas of SF6

Reactions of both SF₄ and SF₅ with F have been studied at 295 K in a gas-flow reactor sampled by a mass spectrometer. The rate coefficient for the combination reaction of F with SF₄ to produce SF₅ was found to increase from (0.9 to 3.0)×10^–12 cm³ s^–1 when the helium bath gas number density was increased from (2 to 26)×10¹⁶ cm^–3. The values obtained here are three orders of magnitude higher than a recent estimate of the high-pressure value based on the modelling of photochemical studies. The experimental results have been compared with RRKM and master equation calculations in which a simplified Gorin model has been used to determine the structure of the transition state. These calculations show that reasonable agreement can be obtained between the experimental data and the calculation if a small (2 KJ/mol) activation energy is assumed. The rate coefficient for the reaction between SF₅ and F to produce SF₆ was found to be independent of helium bath gas number density within the range given above. The value obtained for the rate coefficient was 9×10^–12 cm³ s^–1 with an uncertainty of a factor of 2. This value is close to that of 1×10^–11 cm³ s^–1 computed from the simplified Gorin model and to the value of 1.7×10^–11 cm³ s^–1 deduced from modelling of photochemical experiments.     

Identification of corona discharge-induced SF6 oxidation mechanisms using SF6/18O2/H2 16O and SF6/16O2/H2 18O gas mixtures

The absolute yields of gaseous oxyfluorides SOF₂, SO₂F₂, and SOF₄ from negative, point-plane corona discharges in pressurized gas mixtures of SF₆ with O₂ and H₂O enriched with¹⁸O₂ and H₂ ¹⁸O have been measured using a gas chromatograph-mass spectrometer. The predominant SF₆ oxidation mechanisms have been revealed from a determination of the relative¹⁸O and¹⁶O isotope content of the observed oxyfluoride by-product. The results are consistent with previously proposed production mechanisms and indicate that SOF₂ and SO₂F₂ derive oxygen predominantly from H₂O and O₂, respectively, in slow, gas-phase reactions involving SF₄, SF₃, and SF₂ that occur outside of the discharge region. The species SOF₄ derives oxygen from both H₂O and O₂ through fast reactions in the active discharge region involving free radicals or ions such as OH and O, with SF₅ and SF₄.     

Negative ion formation in compounds relevant to SF6 decomposition in electrical discharges

Dissociative and nondissociative electron attachment in the electron impact energy range 0–14 eV are reported for SOF₂ SOF₄, SO₂F₂, SF₄, SO₂, and SiF₄ compounds which can be formed by electrical discharges in SF₆. The electron energy dependences of the mass-identified negative ions were determined in a time-of-flight mass spectrometer. The ions studied include F^– and SOF ₂ ^–* from SOF₂; SOF ₃ ^– and F^– from SOF₄; SO₂F ₂ ^–* , SO₂F^–, F ₂ ^– , and F^– from SO₂F₂; SF ₄ ^–* and F^– from SF₄; O^–, SO^–, and S^– from SO₂; and SiF ₃ ^– and F^– from SiF₄. Thermochemical data have been determined from the threshold energies of some of the fragment negative ions. Lifetimes of the anions SOF ₂ ^–* , SO₂F ₂ ^–* , and SF ₄ ^–* are also reported.     

Transfer of F− in the reaction of SF 6 − with SOF4: Implications for SOF4 production in corona discharges

The temperature (T) and electric field-to-gas pressure (E/P) dependences of the rate coefficientk for the reaction SF ₆ ^– +SOF₄SOF ₅ ^– +SF₅ have been measured. ForT<270 K,k approaches a constant of 2.1×10^–9 cm³/s, and for 433>T>270 K,k decreases withT according tok (cm³/s)=0.124 exp [–3.3 lnT(K)]. ForE/Pk has a constant value of about 2.5×10^–10 cm³/s, and for 130 V/cm·torr>E/P>60 V/cm·torr, the rate is approximately given byk (cm³/s)7.0×10^–10 exp (–0.022E/P). The measured rate coefficient is used to estimate the influence of this reaction on SOF₄ production from negative, point-plane, glow-type corona discharges in gas mixtures containing SF₆ and at least trace amounts of O₂ and H₂O. A chemical kinetics model of the ion-drift region in the discharge gap is used to fit experimental data on SOF₄ yields assuming that the SF ₆ ^– +SOF₄ reaction is the predominant SOF₄ loss mechanism. It is found that the contribution of this reaction to SOF₄ destruction falls considerably below the estimated maximum effect assuming that SF ₆ ^– is the predominant charge carrier which reacts only with SOF₄. The results of this analysis suggest that SF ₆ ^– is efficiently deactivated by other reactions, and the influence of SF ₆ ^– +SOF₄ on SOF₄ production is not necessarily more significant than that of other slower secondary processes such as gas-phase hydrolysis.     

Electron scattering and dissociative attachment by SF6 and its electrical-discharge by-products

Discrete electron-molecule processes relevant to SF₆ etching plasmas are examined. Absolute, total scattering cross sections for 0.2–12-eV electrons on SF₆, SO₂, SOF₂, SO₂F₂, SOF₄, and SF₄, as well as cross sections for negative-ion formation by attachment of electrons, have been measured. These are used to calculate dissociative-attachment rate coefficients as a function ofE/N for SF₆ by-products in SF₆.     

Mass spectrometric study of SF6-N2 plasma during etching of silicon and tungsten

The reaction products in the SF₆-N₂ mixture rf plasma during reactive ion etching of Si and W have been measured by a mass spectrometric method. Two kinds of cathode materials were used in this work; they were stainless steel for the Si etching, and SiO₂ for the W etching. The main products detected in the etching experiments of Si and W included SF₄, SF₂, SO₂, SOF₂, SOF₄, SO₂F₂, NSF, NF₃, N₂F₄, N_xS_y, NO₂, and SiF₄. In the W etching with the SiO₂ cathode, additional S₂F₂, N₂O, and WF₆ molecules were also obtained. The formation reactions about the novel NSF compound and the sulfur oxyfuorides were discussed.     

The ablation of quartz wall by SF6 under radiofrequency discharge

The behaviour of SF₆ in quartz and alumina tubes of a flow reactor capacitively coupled to a 35 MHz radiofrequency generator has been investigated at pressure of 20 torr, with power levels of 3.5÷5.5 cal cm^?3 sec^?1 and gas flow rates ranging between 0.1 and 2 1(STP) min^?1. A combination of gaschromatographic, mass spectrometric and infrared spectrophotometric techniques has shown the presence of SO₂F₂, SOF₄, SOF₂, SiF₄, F₂, O₂ together with unreacted SF₆ in the discharge products.A detailed quantitative investigation of the effluent products and of their concentration profiles versus space time and power is presented and a general mechanism for the ablation process of the quartz wall is suggested.     

Rate Coefficient for Self-Association Reaction of CF2 Radicals Determined in the Afterglowof Low-Pressure C4F8 Plasmas

We have analyzed decay kinetics of CF₂ radicals in the afterglow of low-pressure, high-density C₄F₈ plasmas. The decay curve of CF₂ density has been approximated by the combination of first- and second-order kinetics. The surface loss probability evaluated from the frequency of the first-order decay process has been on the order of 10^–4. This small surface loss probability has enabled us to observe the second-order decay process. The mechanism of the second-order decay is self-association reaction between CF₂ radicals (CF₂+CF₂C₂F₄). The rate coefficient for this reaction has been evaluated as (2.6–5.3)×10^–14 cm³/s under gas pressures of 2 to 100 mTorr. The rate coefficient was found to be almost independent of the gas pressure and has been in close agreement with known values, which are determined in high gas pressures above 1 Torr.     

Plasma etching of refractory metals (W,Mo, Ta) and silicon in SF6 and SF6-O2. An analysis of the reaction products

The etching rates and reaction products of refractory metals (W, Mo, and Ta) and silicon have been studied in a SF₆-O₂ r.f. plasma at 0.2 torr. The relative concentrations of WF₆ and WOF₄ and the intensities of the WF _n ⁺ (n=3–5), WOF _m ⁺ (m=1–3), MoF _n ⁺ , and MoF _m ⁺ ions have been measured by mass spectroscopy. An analysis of the neutral composition of the plasma during etching of these metals and a comparison with the results obtained for silicon show that at least two species are involved for W and Mo etching: fluorine and oxygen atoms. A reaction scheme is proposed.     

Kinetics of the reactions of CCl3 with O and O2 and of CCl3O2 with NO at 295 K

The reactions of CCl₃ with O(³P) and O₂ and those of CCl₃O₂ with NO have been studied at 295 K using discharge flow methods with helium as the bath gas. The rate coefficient for the reaction of CCl₃ with O was found to be (4.2 ± 0.6) × 10^?11 cm³/s and that for CCl₃O₂ with NO was (18.6 ± 2.8) × 10^?12 cm³/s with both coefficients independent of [He]. For reaction between CCl₃ and O₂ the rate coefficient was found to increase from 1.51 7times; 10^?14 cm³/s to 7.88 × 10^?14 cm³/s as the [He] increased from 3.5 × 10¹⁶ cm^?3 to 2.7 × 10¹⁷ cm^?3. There was no evidence for a direct two-body reaction, and it is concluded that the only product of this reaction is CCl₃O₂. Examination of these results for CCl₃ + O₂ in terms of current simplified falloff treatment suggests that the high-pressure limit for this reaction is ～ 2.5 × 10^?12 cm³/s, which may be compared with a direct measurement of the high-pressure limit of 5 × 10^?12 cm³/s. A value of (5.8 ± 0.6) × 10^?31 cm⁶/s has been obtained for k₀, the coefficient in the low-pressure region. This value is compared with corresponding values found earlier for the (CH₃, O₂) and (CF₃, O₂) systems and with estimates based on unimolecular rate theory.     

Kinetics of Sulfur Oxide, Sulfur Fluoride, and Sulfur Oxyfluoride Anions with Ozone

Rate constants and product branching ratios were measured for eleven sulfur oxide, sulfur fluoride, and sulfur oxyfluoride anions reacting with O₃. The SO^– ₂ ion reacts rapidly to form –O^– ₃, SO^– ₃, and e^–. The temperature dependence of the branching ratio shows more reactive detachment and less SO^– ₃ formation at higher temperature. SO^– ₃ reacts with O₃, forming SO^– ₄ at 1/3 to 1/4 of the collisional rate from 200 to 500 K, respectively. At 300 K, SF^– ₆ charge transfers to O₃ at 20% of the collisional rate. F₂SO^– ₂ reacts with O₃ at a few percent of the collision rate, forming both O^– ₃ and FSO^– ₃; The ion F₃SO^– reacts slowly with O₃ to form F₃SO^– ₂. The ions SO^– ₄, SF^– ₅, FSO^– ₂, FSO^– ₃, F₃SO^–, and F₅SO^– are unreactive with O₃. A trend is noted relating the ion reactivity with the coordination of the central sulfur atom, i.e., the number of S–F bonds plus two times the number of S=O bonds. Only ions with a sulfur coordination of 4 or 6 are reactive, although the reaction rate constants are generally small. The reactivity trends appear to be partially explained by spin conservation. These reactions are all sufficiently slow, so O₃ reactions should not play a major role in SF₆/O₂ discharges. All ions studied have been found to be unreactive with O₂.     

Spectrokinetic study of SF5 and SF5O2 radicals and the reaction of SF5O2 with NO

UV spectra of SF₅ and SF₅O₂ radicals in the gas phase at 295 K have been quantified using a pulse radiolysis UV absorption technique. The absorption spectrum of SF₅ was quantified from 220 to 240 nm. The absorption cross section at 220 nm was (5.5 ± 1.7) × 10⁻¹⁹ cm². When SF₅ was produced in the presence of O₂ an equilibrium between SF₅, O₂, and SF₅O₂ was established. The rate constant for the reaction of SF₅ radicals with O₂ was (8 ± 2) × 10⁻¹³ cm³ molecule⁻¹ s⁻¹. The decomposition rate constant for SF₅O₂ was (1.0 ± 0.5) × 10⁵ s⁻¹, giving an equilibrium constant of K_eq = [SF₅O₂]/[SF₅][O₂] = (8.0 ± 4.5) × 10⁻¹⁸ cm³ molecule⁻¹. The SF₅ O₂ bond strength is (13.7 ± 2.0) kcal mol⁻¹. The SF₅O₂ spectrum was broad with no fine structure and similar to the UV spectra of alkyl peroxy radicals. The absorption cross section at 230 nm was found to (3.7 ± 0.9) × 10⁻¹⁸ cm². The rate constant of the reaction of SF₅O₂ with NO was measured to (1.1 ± 0.3) × 10⁻¹¹ cm³ molecule⁻¹ s⁻¹ by monitoring the kinetics of NO₂ formation at 400 nm. The rate constant for the reaction of F atoms with SF₄ was measured by two relative methods to be (1.3 ± 0.3) × 10⁻¹¹ cm³ molecule⁻¹ s⁻¹. © 1994 John Wiley & Sons, Inc.     

Kinetics of the reactions of CH3 with O(3P) and O2 at 295 K

The reactions of CH₃ radicals with O(³P) and O₂ have been studied at 295 K in a gas flow reactor sampled by a mass spectrometer. For the reaction between CH₃ and O, conditions were such that [O] » [CH₃] and the methyl radicals decayed under pseudo-first-order conditions giving a rate coefficient of (1.14 ± 0.29) × 10^?10 cm³/s. The reaction between CH₃ and O₂ was studied in separate experiments in which CH₃ decayed under pseudo-first-order conditions. In this case, the rate coefficient obtained increased with increasing concentration of the helium carrier gas. This was varied over the range of 2.5–25 × 10¹⁶ cm^?3, resulting in values for the apparent two-body rate coefficient ranging from 1 × 10^?14 to 5.2 × 10^?14 cm³/s. No evidence was found for the production of HCHO by a direct two-body process involving CH₃ + O₂, and an upper limit of 3 × 10^?16 cm³/s was placed on the rate coefficient for this reaction. The experimental results for the apparent two-body rate coefficient exhibit the curvature one would expect for an association reaction in the fall-off region. Calculations used to extrapolate these measurements to the low-pressure limit yield a value for k₀ of (3.4 ± 1.1) × 10^?31 cm⁶/s, which is more than a factor of 2 higher than previous estimates.     

Ozone synthesis in charged particle induced noble gas-oxygen and noble gas-oxygen-sulfur hexafluoride discharges

A series of experimental measurements of ozone concentration produced by irradiation of noble gas (He, Ne, and Ar)-O₂ and noble gas-O₂-SF₆ mixtures with energetic (MeV) helium and lithium ions are reported. Continuous irradiations at dose rates of 10¹⁵–10¹⁷ eV cm ^–3 s ^–1 for a few hundred milliseconds were used. The resulting ozone concentration was found to be nonlinear with dose rate for a given irradiation time. This nonlinearity was effectively reduced by an increase in noble gas pressure. Few mole percent addition of SF₆ generally resulted in an increase in the ozone concentration. This increase was highest for lower noble gas pressures and longer irradiation times. Further SF₆ addition, however, caused a reduction in the ozone concentration. Results are explained by considering the relevant reactions responsible for ozone production and loss.     

Vibrational frequencies and force constants of N2O4 in complexes with molecules of different solvents determined by Raman spectra andAb initio calculation

The Raman spectra of N₂O₄ solutions in organic solvents have been recorded. The frequencies ofv ₁,v ₂, andv ₃ bands of N₂O₄ increase with increasing solvent electron-donor properties. Especially large changes ofv ₃ N-N stretching band have been observed (254.5 cm^–1 in n-hexane, 276.5 cm^–1 in 1,4-dioxane). The ab initio calculations have shown that the interaction between N₂O₄ and electron-donor molecules causes an increase of N-N and N-O stretching and O-N-O bending force constants of N₂O₄ in agreement with the results of Raman study.