Enhanced luminescence and degradation of SiO2:Ce,Tb powder phosphors prepared by a sol-gel process

Enhanced green photoluminescence and cathodoluminescence (CL) from Tb³⁺ ions due to co-doping with Ce³⁺ ions were observed from SiO₂:Ce,Tb powder phosphors prepared by a sol-gel technique. Blue emission from the Ce³⁺ ions was completely suppressed by Tb co-doping, presumably due to energy transfer from Ce³⁺ to Tb³⁺. In addition, the green CL intensity from SiO₂:Ce,Tb degraded by ∼50% when the powders were irradiated for 10 h with a 2 keV, 54 mA/cm² beam of electrons in an ultra-high vacuum chamber containing either 1×10⁻⁸ or 1×10⁻⁷ Torr O₂. Desorption of oxygen from the surface was observed during the decrease of CL intensity. The mechanisms for energy transfer from Ce³⁺ ions to Tb³⁺ ions to enhance the green luminescence, and mechanisms for desorption of oxygen from the phosphor surface that would result in decreased CL intensity are discussed.     

Low voltage electron induced cathodoluminescence degradation and surface characterization of Sr3(PO4)2:Tb phosphor

Tb³⁺-doped Sr₃(PO₄)₂ phosphor was prepared by a sol-gel combustion method. A trigonal structure having Sr and O atoms occupying two different lattice sites were obtained. Scanning Auger nanoprobe was used to analyze the morphology of the particles. Photoluminescence (PL) and cathodoluminescence (CL) properties of Sr₃(PO₄)₂:Tb powder phosphors were evaluated and compared. In addition, the CL intensity degradation of Sr₃(PO₄)₂:Tb was evaluated when the powders were irradiated with a beam of electrons in a vacuum chamber maintained at an O₂ pressure of 1 × 10⁻⁶ Torr or a background pressure of 1 × 10⁻⁸ Torr O₂. The surface chemical composition of the degraded powders, analyzed by X-ray photoelectron spectroscopy (XPS), suggests that new compounds (metal oxides) of strontium and phosphorous were formed on the surface. It is most likely that these compounds contributed to the CL intensity degradation of the Sr₃(PO₄)₂:Tb phosphors. The CL properties and possible mechanism by which the new metal oxides were formed on the surface due to a prolonged electron beam irradiation are discussed.     

Effects of SnO2 surface coating on the degradation of ZnS thin film phosphor

Pulsed laser deposited ZnS bare and SnO₂ coated ultra thin films were subjected to prolonged electron beam bombardment with 2 keV energy and a steady 44 mA/cm² current density, in 1 × 10⁻⁶ Torr O₂ pressure backfilled from a base pressure of 3 × 10⁻⁹ Torr at room temperature. Auger electron spectroscopy (AES) was used to monitor changes of the surface chemical composition of both the bare and coated phosphor films during electron bombardment. Degradation was manifested by the decrease of sulphur and accumulation of oxygen on the surface of the bare phosphor. However, with the SnO₂ coating this phenomenon was delayed until the protective SnO₂ was depleted on the surface through dissociation and reduction.     

The effect of different gas atmospheres on luminescent properties of pulsed laser ablated SrAl2O4:Eu,Dy thinfilms

SrAl₂O₄:Eu²⁺,Dy³⁺ thin films were grown on Si (1 0 0) substrates using the pulsed laser deposition (PLD) technique to investigate the effect of vacuum, oxygen (O₂) and argon (Ar) deposition atmospheres on the structural, morphological, photoluminescence (PL) and cathodoluminescence (CL) properties of the films. The films were ablated using a 248 nm KrF excimer laser. Atomic force microscopy (AFM), scanning electron microscopy (SEM), X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS) and fluorescence spectrophotometry were used to characterize the thin films. Auger electron spectroscopy (AES) combined with CL spectroscopy were employed for the surface characterization and electron-beam induced degradation of the films. Better PL intensities were obtained from the unannealed films prepared in Ar and O₂ atmospheres with respect to those prepared in vacuum. A stable green emission peak at 515 nm, attributed to 4f⁶5d¹→4f⁷ Eu²⁺ transitions were obtained with less intense peaks at 619 nm, which were attributed to transitions in Eu³⁺. After annealing the films prepared in vacuum at 800 °C for 2 h, the intensity of the green emission (520 nm) of the thin film increased considerably. The amorphous thin film was crystalline after the annealing process. The CL intensity increased under prolonged electron bombardment during the removal of C due to electron stimulated surface chemical reactions (ESSCRs) on the surface of the SrAl₂O₄:Eu²⁺, Dy³⁺ thin films. The CL stabilized and stayed constant thereafter.     

Surface chemical changes of CaTiO3:Pr upon electron beam irradiation

Surface chemical changes of CaTiO₃:Pr³⁺ phosphor material and their effect on the red emission intensity of the ¹D₂→³H₄ transition of Pr³⁺, upon electron beam irradiation are presented. Red emission at 613 nm was obtained upon probing the surface with a 2 keV electron beam. The surface chemical changes and Pr³⁺ red emission were monitored using an Auger Electron Spectroscopy (AES) and Cathodoluminescence (CL) spectrometer, respectively. The CL intensity decreased with a decrease in O on the surface at 1×10⁻⁸ Torr base pressure and decreased with an increase in O on the surface at 1×10⁻⁶ Torr O₂. The X-ray Photoelectron Spectroscopy (XPS) revealed that CL degradation at 1×10⁻⁶ Torr O₂ is due to the formation of CaO and CaO_x as well as TiO₂/Ti₂O₃ non-luminescent species on the surface.     

Luminescence properties of CaS:Ce, Sm nanophosphors

CaS:Ce, Sm nanophosphors were synthesized via solid state diffusion method. X-Ray diffraction confirmed the cubic crystalline phase of CaS:Ce, Sm nanoparticles. The particle size calculated using Debye-Scherrer formula was found to be 52 nm. The morphological investigations of the nanoparticles were made using TEM and found to have nearly spherical morphology with diameter 45-50 nm, which is in close agreement with the XRD result. The PL emission characteristics of CaS:Ce, Sm as a function of cerium and samarium concentrations have been studied and CaS:Ce_0.6Sm_0.4 system has maximum emission intensity, hence it was opted for further studies. The CaS:Ce_0.6Sm_0.4 system showed independent emission of Sm and Ce when excited at 330 and 450 nm, respectively. To study the energy transfer between cerium and samarium, the CaS:Ce_0.6Sm_0.4 was excited at wavelengths other than the excitation wavelengths of Ce (450 nm) and Sm (330 nm). The existence of Ce emission (at an excitation of 390 nm) even in the absence of Ce excitation band and Sm emission at an excitation of 405 nm, which is the excitation band of Ce, indicates the energy transfer at these two wavelengths. Thermoluminescence characteristics of ⁶⁰Co irradiated CaS:Ce_0.6Sm_0.4 have been investigated for different doses of 0.14-125 Gy. All the glow curves show a single peak at 475 K. With increasing dose, the intensity of this peak increases and a shoulder is formed on the lower temperature side at 415 K at 21 Gy of exposure. CaS:Ce_0.6Sm_0.4 shows almost linear dose dependence up to 125 Gy.     

Luminescence characterization and electron beam induced chemical changes on the surface of ZnAl2O4:Mn nanocrystalline phosphor

Luminescence characteristics and surface chemical changes of nanocrystalline Mn²⁺ doped ZnAl₂O₄ powder phosphors are presented. Stable green cathodoluminescence (CL) or photoluminescence (PL) with a maximum at ∼512 nm was observed when the powders were irradiated with a beam of high energy electrons or a monochromatic xenon lamp at room temperature. This green emission can be attributed to the ⁴T₁ → ⁶A₁ transitions of the Mn²⁺ ion. Deconvoluted CL spectra resulted in two additional emission peaks at 539 and 573 nm that may be attributed to vibronic sideband and Mn⁴⁺ emission, respectively. The luminescence decay of the Mn²⁺ 512 nm emission under 457 nm excitation is single exponential with a lifetime of 5.20 ± 0.11 ms. Chemical changes on the surface of the ZnAl₂O₄:Mn²⁺ phosphor during prolonged electron beam exposure were monitored using Auger electron spectroscopy. The X-ray photoelectron spectroscopy (XPS) was used to determine the chemical composition of the possible compounds formed on the surface as a result of the prolonged electron beam exposure. The XPS data suggest that the thermodynamically stable Al₂O₃ layer was formed on the surface and is possibly contributing to the CL stability of ZnAl₂O₄:Mn phosphor.     

Green Emitting Cerium Doped CaS Whiskers Grown by Solid State Diffusion Method

Undoped and cerium doped Calcium sulfide (CaS) phosphors were synthesized using solid state diffusion method. The X-ray diffraction pattern revealed that both undoped and doped CaS crystallites have cubic structure with average crystallite size varying from 20 to 30 nm. Scanning electron micrographs indicated that Ce doped CaS phosphors were composed of whiskers with different dimensions and orientations. The optical properties of undoped and Ce doped particles were characterized using Photoluminescence (PL) and UV-Vis absorption spectroscopy. The PL emission spectrum of cerium doped CaS phosphors for an excitation wavelength 465 nm showed a main peak at 500 nm and a shoulder peak at 556 nm due to 5d?→?4f transition in Ce³⁺ ions. The variation of PL intensity with cerium concentration was investigated and the maximum PL intensity was obtained for a doping concentration of 3 wt.%. The optical band gap of the samples was estimated from the diffuse reflectance spectrum and was found to increase with increase in cerium concentration. The enhanced optical properties of these phosphors can be exploited in various optoelectronic devices including displays and bioimaging techniques.     

Lattice site dependent cathodoluminescence behavior and surface chemical changes in a Sr5(PO4)3F host

Eu activated Sr₅(PO₄)₃F phosphor powders have been subjected to the electron bombardment at 2 keV (10 μA) at an oxygen pressure of 1×10⁻⁶ Torr. The synthesized Sr₅(PO₄)₃F phosphor was identical to the hexagonal apatite structure, with the Sr present at two different sites C_s (S1) and C₃ (S2) in the Sr₅(PO₄)₃F host, as inferred from the crystallographic study. Cathodoluminescence (CL) and Auger electron spectroscopy of the phosphor excited by the same electron beam were used to monitor changes in the surface state during prolonged electron bombardment. A direct correlation between the surface reactions and the degradation of the CL brightness was observed. Both C and F were depleted from the surface during electron bombardment. The postulated mechanism for the electron stimulated chemical reactions on the phosphor surface is electron beam dissociation of molecular species to atomic species, which subsequently react with C to form volatile compounds CO₂, CH₄, etc. and with Sr₅(PO₄)₃F to form a non luminescence layer of metal oxides of Sr and P.     

Low energy Ar-ion bombardment effects on the CeO2 surface

The structure and electronic properties of epitaxial grown CeO₂(1 1 1) thin films before and after Ar⁺ bombardment have been comprehensively studied with synchrotron radiation photoemission spectroscopy (SRPES). Ar⁺ bombardment of the surface causes a new emission appearing at 1.6 eV above the Fermi edge which is related to the localized Ce 4f¹ orbital in the reduced oxidation state Ce³⁺. Under the condition of the energy of Ar ions being 1 keV and a constant current density of 0.5 μA/cm², the intensity of the reduced state Ce³⁺ increases with increasing time of sputtering and reaches a constant value after 15 min sputtering, which corresponds to the surface being exposed to 2.8 × 10¹⁵ ions/cm². The reduction of CeO₂ is attributed to a preferential sputtering of oxygen from the surface. As a result, Ar⁺ bombardment leads to a gradual buildup of an, approximately 0.69 nm thick, sputtering altered layer. Our studies have demonstrated that Ar⁺ bombardment is an effective method for reducing CeO₂ to CeO_2−x and the degree of the reduction is related to the energy and amount of Ar ions been exposed to the CeO₂ surface.     

Dyand Mn emission in KMgSO4Cl phosphor

In the present paper, KMgSO₄Cl:Ce³⁺, KMgSO₄Cl:Ce³⁺,Dy³⁺, and KMgSO₄Cl:Ce³⁺,Mn²⁺, new halosulphate phosphors were synthesized by wet chemical method. X-ray powder diffraction (XRD) and photoluminescence (PL) characterization of phosphors have been reported in this paper. The effects of Dy³⁺ co-doping on the PL characteristics of KMgSO₄Cl:Ce phosphor were studied. Energy transfer from Ce³⁺→Dy³⁺and Ce³⁺→Mn²⁺ results in increase in PL peak intensity suggesting that Ce³⁺ plays an important role in PL emission in the present matrix. The PL emission spectra have two peaks (482 and 571 nm) and a single peak (564 nm), which could be attributed to the Ce³⁺→Dy³⁺and Ce³⁺→Mn²⁺ emissions, respectively.     

Photoluminescence study in Ce activated M6B5AlO15 (M = Sr,Ca, Ba) and mixed host aluminoborate phosphors

In this paper we report the modified solid state synthesis of Ce³⁺ activated Sr₆B₅AlO₁₅, Ca₆B₅AlO₁₅ Ba₆B₅AlO₁₅ and mixed host aluminoborate phosphors. The prepared phosphors were characterized by photoluminescence technique. The PL excitation spectra showed the excitation peaks ranging from 300 to 400 nm and emission spectra are observed in UV-blue region of spectrum and it varied for different hosts. This kind of emission is due to 4f⁶5d → 4f⁷ transition of Ce³⁺ ion. Further PLE and PL emission spectra for various compositions Ca₅Sr₁B₅AlO₁₅, Ca₄Sr₂B₅AlO₁₅, Ca₃Sr₃B₅AlO₁₅, Ca₂Sr₄B₅AlO₁₅, CaSr₅B₅AlO₁₅ are also taken which shows Ce³⁺ emission at 428 nm, 425 nm, 432 nm, 427 nm, 438 nm respectively. The calculated ²F_J (J = 7/2, 5/2) energy gap of Ce³⁺ in all hosts have been calculated and obtained values for Sr₆B₅AlO₁₅, Ba₆B₅AlO₁₅ phosphors are 1888 cm⁻¹ and 1330 cm⁻¹ respectively. PL emission spectra of mixed host aluminoborates have shown slight variations in positions of emission peaks.     

Characteristic properties of Y2SiO5:Ce thin films grown with PLD

Three different gases (nitrogen (N₂), oxygen (O₂) and argon (Ar)) were used as background gases during the growth of pulsed laser deposition (PLD) Y₂SiO₅:Ce thin films. A Krypton fluoride laser (KrF), 248 nm was used for the PLD of the films on silicon (Si) (1 0 0) substrates. The effect of the background gases on the surface morphology, crystal growth and luminescent properties were investigated. All the experimental parameters, the gas pressure (455 mT), the substrate temperature (600 °C), the pulse frequency (8 Hz), the number of pulses (4000) and the laser fluence (1.6±0.2) J/cm² were kept constant. The only parameter that was changed during the deposition was the ambient gas species. The surface morphology and average particle sizes were monitored with scanning electron microscopy (SEM) and atomic force microscopy (AFM). X-ray diffraction (XRD) and Auger electron spectroscopy (AES) were used to determine the crystal structure and composition, respectively. Cathodo- (CL) and photoluminescence (PL) were used to measure the luminescent intensities for the different phosphor thin films. The nature of the particles, ablated on the substrate, is related to the collisions between the ejected particles and the ambient gas particles. The CL and PL intensities also depend on the particle sizes. A 144 h (coulomb dose of 1.4×10⁴ C cm⁻²) electron degradation study on the thin films ablated in the Ar gas environment resulted in a decrease in the main CL intensity peak at 440 nm and to the development of a new very broad luminescent peak spectra ranging from 400 to 850 nm due to the growth of a SiO₂ layer on the surface.     

Synthesis and photoluminescence properties of aqueous CdWO4 quantum dots with WO6 luminescence center

Aqueous CdWO₄ QDs were synthesized by the reaction of CdCl₂ and Na₂WO₄ in the presence of mercaptoacetic acid (TGA) as capping reagent. The crystal morphology, particle size and its distribution of as-prepared products were characterized by transmission electron microscopy (TEM, SAED) atomic force microscopy (AFM), high-resolution transmission electron microscopy (HRTEM), and photon correlation spectroscopy (PCS), respectively. Qualitative assays for functional groups on the QDs’ surface were measured by fourier transform infrared spectroscopy (FTIR). Photoluminescence properties of QDs were studied by photoluminescence spectroscopy (PL). The results showed that the single QD with diameter of about 8 ± 2 nm was single-crystal. The particle size distribution of QDs was normal. Infrared absorption bands of carboxylic group on the surface of CdWO₄ QDs were observed around 1610-1550 cm⁻¹ (nonsymmetrical vibration of -COO⁻) and 1400 cm⁻¹ (symmetric vibration of C-O). With reaction-time going, PL peak position shifted from 498 to 549 nm and intensity of PL increased first and then decreased. PL peak position of QDs was blue-shift compared with 570 nm WO₆⁶⁻ luminescence center of bulk CdWO₄.     

Crystal structure and photoluminescence of (Y1−xCex)2Si3O3N4

Oxonitridosilicate phosphors with compositions of (Y_1−xCe_x)₂Si₃O₃N₄ (x=0−0.2) have been synthesized by solid state reaction method. The structures and photoluminescence properties have been investigated. Ce³⁺ ions have substituted for Y³⁺ ions in the lattice. The emission and excitation spectra of these phosphors show the characteristic photoluminescence spectra of Ce³⁺ ions. Based on the analyses of the diffuse reflection spectra and the PL spectra, a systematic energy diagram of Ce³⁺ ion in the forbidden band of sample with x=0.02 is given. The best doping Ce content in these phosphors is ∼2 mol%. The quenching temperature is ∼405 K for the 2 mol% Ce content sample. The luminescence decay properties were investigated. The primary studies indicate that these phosphors are potential candidates for application in three-phosphor-converted white LEDs.     

Preparation and optical properties of Ce activated (Ca1 − x,Srx)Al2Si2O8 phosphors

(Ca_1 − x, Sr_x)Al₂Si₂O₈:0.06Ce³⁺, M⁺ (M⁺ = Li⁺, Na⁺, K⁺) phosphors have been prepared by conventional solid-state reaction method. The structural and optical properties of the phosphors were characterized by X-ray diffraction (XRD) technique and spectrophotometer, respectively. A regular variation was found among the XRD patterns of (Ca_1 − x, Sr_x)Al₂Si₂O₈:0.06Ce³⁺ phosphors based on the changing of Sr content. With the increase of Sr content, the maximum of emission band presented slight blue shifts (~ 15 nm). The luminescence intensity of CaAl₂Si₂O₈:0.06Ce³⁺ and SrAl₂Si₂O₈:0.06Ce³⁺ were significantly enhanced when K⁺ and Li⁺ were incorporated, respectively.     

Ar irradiation of Si nanocrystal-doped SiO2: Evolution of photoluminescence

We report the evolution of photoluminescence (PL) of Si nanocrystals (nc-Si) embedded in a matrix of SiO₂ during Ar⁺ ion bombardment. The integrated intensity of nc-Si PL falls down drastically before the Ar⁺ ion fluence of 10¹⁵ ions cm⁻², and then decreases slowly with the increasing ion fluence. At the meantime, the PL peak position blueshifts steadily before the fluence of 10¹⁵ ions cm⁻², and then changes in an oscillatory manner. Also it is found that the nc-Si PL of the Ar⁺-irradiated sample can be partly recovered after annealing at 800 °C in nitrogen, but can be almost totally recovered after annealing in oxygen. The results confirm that the ion irradiation-induced defects are made up of oxygen vacancies, which absorb light strongly. The oscillatory peak shift of nc-Si can be related to a size-distance distribution of nc-Si in SiO₂.     

Cathodoluminescence degradation of PLD thin films

The cathodoluminescence (CL) intensities of Y₂SiO₅:Ce³⁺, Gd₂O₂S:Tb³⁺ and SrAl₂O₄:Eu²⁺,Dy³⁺ phosphor thin films that were grown by pulsed laser deposition (PLD) were investigated for possible application in low voltage field emission displays (FEDs) and other infrastructure applications. Several process parameters (background gas, laser fluence, base pressure, substrate temperature, etc.) were changed during the deposition of the thin films. Atomic force microscopy (AFM) was used to determine the surface roughness and particle size of the different films. The layers consist of agglomerated nanoparticle structures. Samples with good light emission were selected for the electron degradation studies. Auger electron spectroscopy (AES) and CL spectroscopy were used to monitor changes in the surface chemical composition and luminous efficiency of the thin films. AES and CL spectroscopy were done with 2 keV energy electrons. Measurements were done at 1×10⁻⁶ Torr oxygen pressure. The formation of different oxide layers during electron bombardment was confirmed with X-ray photoelectron spectroscopy (XPS). New non-luminescent layers that formed during electron bombardment were responsible for the degradation in light intensity. The adventitious C was removed from the surface in all three cases as volatile gas species, which is consistent with the electron stimulated surface chemical reaction (ESSCR) model. For Y₂SiO₅:Ce³⁺ a luminescent SiO₂ layer formed during the electron bombardment. Gd₂O₃ and SrO thin films formed on the surfaces of Gd₂O₂S:Tb³⁺ and SrAl₂O₄:Eu²⁺,Dy³⁺, respectively, due to ESSCRs.     

Luminescence studies on swift heavy ion irradiated nanocrystalline aluminum oxide

Pellets of nanocrystalline aluminum oxide synthesized by a combustion technique are irradiated with 120 MeV Au⁹⁺ ions for fluence in the range 5×10¹¹-1×10¹³ ions cm⁻². Two photoluminescence (PL) emissions, a prominent one with peak at ∼525 nm and a shoulder at ∼465 nm are observed in heat treated and Au⁹⁺ ion irradiated aluminum oxide. The 525 nm emission is attributed to F₂²⁺-centers. The PL intensity at 525 nm is found to increase with increase in ion fluence up to 1×10¹² ions cm⁻² and decreases beyond this fluence. Thermoluminescence (TL) of heat-treated and swift heavy ion (SHI) irradiated aluminum oxide gives a strong and broad TL glow with peak at ∼610 K along with a weak shoulder at 500 K. The TL intensity is found to increase with Au⁹⁺ ion fluence up to 1×10¹³ ions cm⁻² and decreases beyond this fluence.     

Luminescence of KCaSO4Cl:X, Y (X=Eu or Ce; Y=Dy or Mn) halosulfate material

Polycrystalline KCaSO₄Cl:Eu, Dy, KCaSO₄Cl:Ce, Dy and KCaSO₄Cl:Ce, Mn phosphors prepared by a solid state diffusion method have been studied for its photoluminescence (PL) characteristics. The presence of two overlapping bands at around 400 and 450 nm in the PL emission spectra of the phosphor suggests the presence of Eu²⁺ in the host compound occupying two different lattice sites. The effects of co-doping on the photoluminescence (PL) characteristics of KCaSO₄Cl:Eu or Ce phosphors have been studied. The decrease in peak intensity of the phosphor on co-doping it with Dy gives an insight into the emission mechanism of the phosphors, which involves energy transfer from Eu²⁺→Dy³⁺, Ce³⁺→Dy³⁺ and Ce³⁺→Mn²⁺.