Excitation of He+ in a hollow cathode arc discharge

Population densities of the excited He(II) levels i=4 to i=10 in hollow cathode arc discharge have been determined and compared with those calculated from a collisional-radiative model. In the experiment the electron temperature was about 2x10⁵K and the electron density about 3x10¹⁹ m^-3. The observed population densities agree within 50% with those calculated by Drawin and Emard, but differ by a factor 4–6 from the ones found by McWhirter and Hearn. The results of the present experiment suggest that near the threshold energies the cross sections for electronic excitation of He⁺ levels from the He⁺ ground state are half those expected from the calculations of Burgess. We conclude that Drawin and Emard's calculations should preferably be employed for the determination of the electron density and the electron temperature from observed population densities.     

Spectroscopic observation of a quasi-steady-state plasma in contact with a neutral gas

Very intense spectral lines of He⁺ were observed when a He plasma was brought into contact with a He gas. The population densities of the excited levels of He⁺ ions were found to be much larger than the values expected in the steady state for the given electron temperature and density. The contact mechanism and a method of determining the electron temperature and the electron and ion densities are discussed for the quasi-steady state.     

大气压等离子体炬电子密度的光谱诊断

利用空心针-板放电装置产生了大气压等离子体炬,采用光谱法测量了其内部及表面的电子密度. 向空心针中通入氩气,在大气环境中产生了长度为1cm的等离子体炬.实验分别测量了Hα谱线和ArⅠ(696.54nm)谱线,通过反卷积方法分离出其相应的Stark展宽,并由此计算了电子密度.结果发现,采用Hα谱线和ArⅠ(696.54nm)谱线Stark展宽计算得到的等离子体的电子密度分别为1.0×10¹⁵cm^－3和3.78×10^{15关键词： 等离子体炬 电子密度 气体温度 Stark展宽}     

High density measurements of the Stark broadened profile of the He(II)4686 Å line

The Stark broadened profile of the He(II)4686 Å line has been scanned in the electron density range of 1–3 × 10¹⁸ cm^-3. The electron temperature, as determined from the line to continuum ratio, ranged from 9.4 to 19.9 eV. The plasma which emitted the He(II)4686 Å line was created in a 60-kJ theta pinch operated with a high fill pressure (3 and 5 torr) of pure helium. Electron densities were calculated from the half-half widths of the He(II)4686 Å line using two Stark broadening theories. These electron densities are compared with the electron densities determined from the absolute value of the continuum intensity and a total sweep up compressional model. The two theoretical models predict electron densities in good agreement with the electron densities from the absolute value of the continuum intensity.     

Quantitative studies of copper plasma using laser induced breakdown spectroscopy

In the present work, we present the spatial evolution of the copper plasma produced by the fundamental harmonic (1064 nm) and second harmonic (532 nm) of a Q-switched Nd:YAG laser. The experimentally observed line profiles of neutral copper have been used to extract the electron temperature using the Boltzmann plot method, whereas, the electron number density has been determined from the Stark broadening. Besides we have studied the variation of electron temperature and electron number density as a function of laser energy at atmospheric pressure. The Cu I lines at 333.78, 406.26, 465.11 and 515.32 nm are used for the determination of electron temperature. The relative uncertainty in the determination of electron temperature is ≈10%. The electron temperature calculated for the fundamental harmonic (1064 nm) of Nd:YAG laser is 10500–15600 K, and that for the second harmonic (532 nm) of Nd:YAG laser is 11500–14700 K at a Q Switch delay of 40 μs. The electron temperature has also been calculated as a function of laser energy from the target surface for both modes of the laser. We have also studied the spatial behavior of the electron number density in the plume. The electron number densities close to the target surface (0.05 mm), in the case of fundamental harmonic (1064 nm) of Nd:YAG laser having pulse energy 135 mJ and second harmonic (532 nm) of Nd:YAG laser with pulse energy 80 mJ are 2.50×10¹⁶ and 2.60×10¹⁶ cm⁻³, respectively.     

Dynamics of an electron beam from a high-current picosecond accelerator

The dynamics of a high-current (10²–10⁴ A) electron beam with energies of 10⁵–10⁶ eV and picosecond duration (10⁻¹⁰ s) at the output of the accelerator tube is investigated. The slowing of electrons by the residual positive charge on the surface of the tube is found to have a significant influence in the case of short pulse durations. The distance of the electron beam from the surface of the tube in vacuum is estimated on the basis of a one-dimensional model. It is shown that the electron radiation can travel to a distance of several centimeters from the surface at current densities below 20 A/mm², whereas at high current densities the beam is trapped near the surface. Zh. Tekh. Fiz. 69, 111–115 (May 1999)     

Anomalous behaviour of electron mobility in space charge layers

The Hall effect on polar faces of ZnO has been measured at 80 K. Surface excess electron densities between 10⁷ and 10¹³ cm^?2 have been achieved by photolysis, annealing or hydrogen exposure. The surface electron mobility as a function of carrier density shows a modulated structure. Possible scattering mechanism are discussed.     

An experimental investigation of partial LTE for lower excited levels of Ar(I) in a wall-confined,argon arc plasma

This paper contains experimental results on partial LTE in the lower excited levels of Ar(I). The experiments were performed in a well-confined argon arc source. The population densities were obtained from self-absorption measurements of the lines. Plasma parameters were determined spectroscopically; measurements included the electron density (from the H_β line width) and the electron temperature (from the Boltzmann plot for higher excited levels of Ar(I)). The results show that the levels 1s₅ to 1s₅ are in Saha-Boltzmann equilibrium for electron densities above 3 × 10¹⁶ cm^-3.     

Production of YBa2Cu3O7−x superconducting thin films by pulsed pseudospark electron beam evaporation

Thin-film superconducting YBa₂Cu₃O_7–x layers have been produced in a single-step process by pulsed electron beam evaporation from a stoichiometric 1-2-3 target. The films were produced at the 100 surface of SrTiO₃ substrates heated to a temperature of approximately 1000 K in a pure oxygen atmosphere of about 10 Pa total pressure. After deposition the films were cooled in situ within 20 minutes to ambient temperature. At present, the films are polycrystalline and show a T_c,zero of 83 K with a transition width of 3–5 K. Critical current densities of 7·10⁴ A/cm² at 4.2 K and zero magnetic field have been achieved. The pulsed electron beams used in these experiments are produced by a pseudospark discharge; the estimated energy density deposited at the target surface by the electron beam is of the order of 4 J/cm².     

电子回旋共振氩等离子体中亚稳态粒子数密度及电子温度的测量

测量了电子回旋共振（ECR）氩等离子体中Ar的1s₅亚稳态粒子数密度，在气压 为02—0 8 Pa、功率为500—700W的范围内，利用吸收光谱法测量了Ar原子8115 nm谱线的吸收强 度，得到1s₅亚稳态粒子数密度为1×10¹⁵—4×10¹⁵ m ^-3.本文综合考 虑基态和1s₅亚稳态粒子的激发对Ar发射谱线强度的贡献后，用两条发射谱线强 度之比得 到电子温度.结果表明，计入了1s₅亚稳态激发的贡献后，所得到的电子温度与 只考虑基态的贡献得到的电子温度相比存在较大的差别. 关键词： 光谱法 亚稳态粒子数密度 电子温度 ECR等离子体源     

Change of phonon dispersion curves due to interstitials in Al

An experimental investigation of the profiles of the 4471 Å and 4922 Å lines in the afterglow of an high density plasma of helium produced by laser is reported. The measured profiles of these two neutral helium lines and their forbidden components are given at electron densities between 5 · 10¹⁶ cm^?3 and 2 · 10¹⁷ cm^?3 and for electron temperature between 3 and 4 eV.     

Energy levels of n-channel accumulation layer on InP surface

Electronic structure of the low lying quantized subbands is calculated for the electron accumulation layer on InP (100) system in a metal-insulator-semiconductor (MIS) structure. Hartree self-consistent technique at an arbitrary temperature has been used, neglecting many-body effects. In contrast to Si MIS system, a second subband is found to be populated even at low temperatures and moderate densities. Excitation energy, E₁₀, is found to be about 30–40 meV in the temperature range 0–300 K at an electron density of 10¹² cm^?2.     

TEM study of ion implanted GaAs after pulsed electron beam annealing

Abstract

(001) GaAs single crystals were implanted with 150 keV Cr⁺ ions using a dose of 5 × 10¹⁵ ions cm^?2. The amorphized surface layers were subjected to pulsed electron beam annealing at energy densities in the range 0–1.3 J cm^?2. A detailed TEM investigation of the damaged and annealed surface layer was conducted. These observations were correlated with backscattering results.     

Optically induced electron spin resonance in doped amorphous silicon

We report the first observations of optically induced electron spin resonance signals in doped and undoped amorphous silicon. We also report the observation of equilibrium surface or interface spin densities ～ 10¹³cm^?2 and volume spin densities ～ 6 × 10¹⁵ cm^?3. The small number of spins observed in equilibrium compared to the large optically induced spin density shows that most electrons are spin paired in equilibrium. We conclude that this implies a very small mean effective correlation energy, U ～ kT.     

On the Stark broadening of the He I 447.1 nm spectral line

Characteristics of the Stark broadened and overlapping 447.1 nm He I spectral line and its forbidden 447.0 nm components have been measured at electron densities between 4.4×10²² m^-3 and 8.2×10²² m^-3 and electron temperatures between 18 000 K and 33 000 K in plasmas created in five various discharge conditions using the low pressure pulsed arc as an optically thin plasma source operated in helium-nitrogen-oxygen gas mixture. Good agreement was found among our measured line characteristics and their existing calculated values, based on the quasistatic approximation. Possible influence of the singly ionized oxygen impurity atoms (O II) on the intensity values of the dip between allowed and forbidden components was found that can explain the disagreement among some existing experimental and calculated line characteristics data, at higher electron temperatures and densities. On the basis of the observed asymmetry of the 447.1 nm spectral line profile we have obtained the ion contribution parameter at 10²² m^-3 electron density and 8 000 K electron temperature. Received 20 February 2001 and Received in final form 25 April 2001     

The reactive adsorption of CCl4 on GaAs(100) surfaces at 300 K

Auger electron spectroscopy has been used to monitor the adsorption of CCl₄ on an As-rich GaAs(100) surface at 300 K. Intensities of the Ga (55 eV), As (34 eV), C (270 eV) and Cl (181 eV) transitions have been used to estimate surface number densities at saturation and relative C : Cl stoichiometry of the surface species. Number densities of (4.3 ± 0.2) × 10¹⁴ and (2.0 ± 0.2) × 10¹⁴ cm ⁻² are obtained for carbon and chlorine respectively, suggesting that coverage saturates near one theoretical monolayer and that the C : Cl stoichiometry is approximately 2:1. These data are discussed in terms of a reactive adsorption mechanism.     

Heavy-ion irradiations of Fe and Fe–Cr model alloys Part 1: Damage evolution in thin-foils at lower doses

The evolution of radiation damage in Fe and Fe–Cr alloys under heavy-ion irradiation was investigated using transmission electron microscopy. Thin foils were irradiated with 100 or 150 keV Fe⁺ and Xe⁺ ions at room temperature (RT) and 300°C. Dynamic observations followed the evolution of damage and the early stages in damage development are reported. Small (2–5 nm) dislocation loops first appeared at doses between 10¹⁶ and 10¹⁷ ions m^?2 in all materials. Loop number densities depended strongly on the foil orientation in pure Fe but not in Fe–Cr alloys. Number densities did not depend strongly on Cr content. For a given material, defect yields were higher for Xe⁺ ions than for Fe⁺ ions, and were higher at RT than at 300°C. Loops with both ?100? and ½?111? Burgers vectors were identified. The proportion of ?100? loops was larger, especially in pure Fe. Dynamic observations showed that: the contrast of some new loops developed over intervals as long as 0.2 s; hopping of ½?111? loops was induced by the ion and electron beams and was pronounced in ultra-pure iron; and many loops were lost during and after ion irradiation by glide to the foil surface. The number of loops retained was strongly dependent on the foil orientation in Fe, but less so in Fe–Cr alloys. This is due to lower loop mobility in Fe–Cr alloys, probably due to pinning by Cr atoms. Reduced loop loss probably explains the higher loop number densities in Fe–Cr alloys compared with pure Fe.     

The temporal evolution of population densities of excited states in atomic oxygen thin plasmas

Population densities of transient oxygen plasmas have been calculated solving a system of differential equations, which describes the temporal evolution of the considered quantum levels. The results, which refer to a temperature of 1 eV and to electron number densities ranging from 10⁸ to 10¹⁴ cm^-3, show the strong importance of the metastable 3s⁵S state in determining the evolution of these plasmas. The present results are then applied to the calculation of relaxation times of selected quantum levels and to the definition of quasistationary conditions of plasmas having low lying excited states (i.e. states belonging to the same principal quantum number as the ground state).     

Measurement of Stark broadened profile of He(II) 4686A

Stark broadened profiles of the He(II) 4686A line were measured using a Z-pinch plasma as source. The electron density was determined from the halfwidth of the He(I) 3889 line and the temperature from the intensity ratio of the He(II) 4686 and the He(I) 3889 lines. The electron densities covered the range 0.5?2.3×10¹⁷ cm³ and the electron temperature was 4 eV. The plasma homogeneity was checked by varying the length of the column observed. The experimental profiles are in better agreement with the recent calculations of Greene than with the earlier calculations of Keeple.     

Numerical data and experimental proof of the unified theory of electron emission (Christov)

In order to check the unified theory of electron emission (Christov), the temperature dependence of the electron emission from the (013), (001) and (112) single crystal faces of tungsten is measured between 300 °K and 1500 °K at relatively low fields yielding low current densities (10^?1 to 10^?7 A/cm²). Experiments are performed in a field electron microscope using a probe hole technique with an electron multiplier. The experimental results are in a fairly good agreement with Christov's theory. Tables of numerical data of Christov's formulae are presented. Using these tables, typical results of the theory are described.