Combustion synthesis and luminescence properties of NaY1−xEux(WO4)2 phosphors

The red phosphors NaY_1−xEu_x(WO₄)₂ with different concentrations of Eu³⁺ were synthesized via the combustion synthesis method. As a comparison, NaEu(WO₄)₂ was prepared by the solid-state reaction method. The phase composition and optical properties of as-synthesized samples were studied by X-ray powder diffraction and photoluminescence spectra. The results show that the red light emission intensity of the combustion synthesized samples under 394 nm excitation increases with increase in Eu³⁺ concentrations and calcination temperatures. Without Y ions doping, the emission spectra intensity of the NaEu(WO₄)₂ phosphor prepared by the combustion method fired at 900 °C is higher than that prepared by the solid-state reaction at 1100 °C. NaEu(WO₄)₂ phosphor synthesized by the combustion method at 1100 °C exhibits the strongest red emission under 394 nm excitation and appropriate CIE chromaticity coordinates (x=0.64, y=0.33) close to the NTSC standard value. Thus, its excellent luminescence properties make it a promising phosphor for near UV InGaN chip-based red-emitting LED application.     

A potential red phosphor LiGd(MoO4)2:Eu for light-emitting diode application

Eu³⁺-doped LiGd(MoO₄)₂ red phosphor was synthesized by solid-state reaction, and its photoluminescent properties were measured. The effect of Eu³⁺ doping concentration on PL intensity was investigated, and the optimum concentration of Eu³⁺ doped in LiGd(MoO₄)₂ was found to be 30 mol%. Compared with Y₂O₂S:0.05Eu³⁺, Na_0.5Gd_0.5MoO₄:Eu³⁺ and KGd(MoO₄)₂:Eu³⁺, the LiGd(MoO₄)₂:Eu³⁺ phosphor showed a stronger excitation band around 395 nm and a higher intensity red emission of Eu³⁺ under 395 nm light excitation. For the first time, intensive red light-emitting diodes (LEDs) were fabricated by combining phosphor and a 395 nm InGaN chip, confirming that the LiGd(MoO₄)₂:Eu³⁺ phosphor is a good candidate for LED applications.     

KBaPO4:Ln (Ln=Eu, Tb, Sm) phosphors for UV excitable white light-emitting diodes

This letter reports the novel three emission bands based on phosphate host matrix, KBaPO₄ doped with Eu²⁺, Tb³⁺, and Sm³⁺ for white light-emitting diodes (LEDs). The phosphors were synthesized by solid-state reaction and thermal stability was elucidated by measuring photoluminescence at higher temperatures. Eu²⁺-doped KBaPO₄ phosphor emits blue luminescence with a peak wavelength at 420 nm under maximum near-ultraviolet excitation of 360 nm. Tb³⁺-doped KBaPO₄ phosphor emits green luminescence with a peak wavelength at 540 nm under maximum near-ultraviolet excitation of 370 nm. Sm³⁺-doped KBaPO₄ phosphor emits orange-red luminescence with a peak wavelength at 594 nm under maximum near-ultraviolet excitation of 400 nm. The thermal stabilities of KBaPO₄:Ln (Ln=Eu²⁺, Tb³⁺, Sm³⁺), in comparison to commercially available YAG:Ce³⁺ phosphor were found to be higher in a wide temperature range of 25-300 °C.     

Photoluminescence properties of nanocrystalline La2TeO6:Eu phosphor prepared by Pechini sol-gel method

La₂TeO₆:Eu³⁺ nanophosphors were prepared by Pechini sol-gel process, using lanthanide nitrates and telluric acid as precursor. X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), thermogravimetric analysis (TG), photoluminescence spectra (PL) and fluorescence lifetime were used to characterize the resulting phosphors. The results of XRD indicate that all samples crystallized completely at 1023 K and are isostructural with the orthorhombic La₂TeO₆. SEM study reveals that the samples have a strong tendency to form agglomerates with an average size ranging from 50 to 80 nm. The photoluminescence intensity and chromaticity were improved for excitation at 254 and 395 nm. The optimized phosphor La_1.80Eu_0.10TeO₆ could be considered as an efficient red-emitting phosphor for solid-state lighting devices based on GaN LEDs.     

NaEu0.96Sm0.04(MoO4)2 as a promising red-emitting phosphor for LED solid-state lighting prepared by the Pechini process

NaEu_0.96Sm_0.04(MoO₄)₂ was prepared by the Pechini method (P phosphor) and as a comparison, also by solid-state reaction technique (S phosphor). The photo-luminescent properties, the morphology and the grain size were investigated. The phosphors show broadened excitation band around 400 nm, high intensity of Eu³⁺⁵D₀→⁷F₂ emission upon excitation around 400 nm, and appropriate CIE chromaticity coordinates. Intensive red light-emitting diodes (LEDs) were fabricated by combining the phosphor and a 400 nm InGaN chip for the first time, which confirm that the phosphor is a good candidate for near UV LED. The luminescent intensity of P phosphor prepared at 700 °C is near that of S phosphor prepared at 800 °C. In addition, P phosphor shows advantages of lower calcining temperature, shorter heating time, and smaller grain size. Considering all these factors, the suitable method for preparing the promising near UV LED phosphor NaEu_0.96Sm_0.04(MoO₄)₂ is recommended to be the Pechini process at 700 °C.     

Preparation and luminescent properties of phosphor MGd2(MoO4)4: Eu (M=Ca, Sr and Ba)

Intense red emitting phosphors MGd₂(MoO₄)₄: Eu³⁺ (M=Ca, Sr and Ba) have been synthesized by the simple sol-gel technique. The formation processes and the phase impurity of phosphors are characterized by thermogravimetry-differential thermal analysis (TG-DTA) and power X-ray diffraction (XRD). The narrower size distribution and the regular shape of the phosphor particles are also measured by Field emission scanning electronic microscopy (FE-SEM). Photo-luminescent properties of the phosphors are performed at room temperature. Their excitation spectra present strong absorption at 395 nm near-UV light and 465 nm blue light, which match well with commercial LED chips. The phosphors exhibit satisfactory and excellent red light dominated by 616 nm and their photoluminescence intensity is about 3-4 times stronger than that of phosphor YAG under the 465 nm excitation. In addition, the optimal concentrations of Eu³⁺ for phosphors MGd₂(MoO₄)₄ (M=Ca, Sr and Ba) have also been determined.     

A potential green-emitting phosphor Ca8Mg(SiO4)4Cl2:Eu for white light emitting diodes prepared by sol-gel method

A potential green emitting phosphor Ca₈Mg(SiO₄)₄Cl₂:Eu²⁺ was prepared by modified sol-gel method. The factors those affect the photoluminescence intensity including heating temperature, the usage of the chlorine source CaCl₂ and the concentration of dopant Eu²⁺ were also investigated in detail. As comparison, the phosphor prepared by solid-state reaction was also prepared. The phosphors show intense absorption in the range of 375-450 nm, which makes it a potential candidate of green emitting phosphor used for near-UV or blue light excited white LEDs.     

Green Eu-doped Ba3Si6O12N2 phosphor for white light-emitting diodes: Synthesis, characterization and theoretical simulation

The Eu²⁺-doped Ba₃Si₆O₁₂N₂ green phosphor (Eu_xBa_3−xSi₆O₁₂N₂) was synthesized by a conventional solid state reaction method. It could be efficiently excited by UV-blue light (250-470 nm) and shows a single intense broadband emission (480-580 nm). The phosphor has a concentration quenching effect at x=0.20 and a systematic red-shift in emission wavelength with increasing Eu²⁺ concentration. High quantum efficiency and suitable excitation range make it match well with the emission of near-UV LEDs or blue LEDs. First-principles calculations indicate that Ba₃Si₆O₁₂N₂:Eu²⁺ phosphor exhibits a direct band gap, and low band energy dispersion, leading to a high luminescence intensity. The origin of the experimental absorption peaks is clearly identified based on the analysis of the density of states (DOS) and absorption spectra. The photoluminescence properties are related to the transition between 4f levels of Eu and 5d levels of both Eu and Ba atoms. The 5d energy level of Ba plays an important role in the photoluminescence of Ba₃Si₆O₁₂N₂:Eu²⁺ phosphor. The high quantum efficiency and long-wavelength excitation are mainly attributed to the existence of Ba atoms. Our results give a new explanation of photoluminescence properties and could direct future designation of novel phosphors for white light LED.     

Synthesis and photoluminescence of CeO2:Eu phosphor powders

The crystalline structure and photoluminescence (PL) properties of europium-doped cerium dioxide synthesized by the solid-state reaction method were analyzed. CeO₂:Eu³⁺ phosphor powders exhibit the pure cubic fluorite phase up to 10 mol% doping concentration of Eu³⁺. With indirect excitation of CeO₂ host at 373 nm, the PL intensity quickly increases with increasing Eu³⁺ concentration, up to about 1 mol%, and then decreases indicating the concentration quenching. While with direct excitation (467 nm), much more stronger PL emissions, especially the electric dipole emission ⁵D₀-⁷F₂ at 612 nm, are observed and no concentration quenching occurs up to 10 mol% doping concentration of Eu³⁺. The nature of this behavior and the cause of the concentration quenching were discussed.     

Ca1−xMo1−ySiyO4:Eux: A novel red phosphor for white light emitting diodes

Single phase of Ca_1−xMo_1−ySi_yO₄:Eu_x³⁺ (0.18?x?0.26, 0?y?0.04) was synthesized by solid-state method. The photoluminescence investigation indicated that Ca_1−xMoO₄:Eu_x³⁺ (0.18?x?0.26) could be effectively excited by 393 and 464 nm, and it exhibited an intense red emission at 615 nm. The introduction of Si⁴⁺ ions did not change the position of the peaks but strongly enhanced the emission intensity of Eu³⁺ under 393 and 464 nm excitations and showed very good color purity. The emission intensity of optimal Ca_0.8Mo_0.98Si_0.02O₄:Eu_0.2³⁺ sample (excited by 393 nm) was about 5.5 times higher than that of the phosphor Y₂O₂S:0.05Eu³⁺. So this phosphor could be nicely suitable for the application of the UV LED chips.     

The luminescence and structural characteristics of Eu- doped NaSrB5O9 phosphor

A red-emitting phosphor NaSrB₅O₉:Eu³⁺ was synthesized by employing a solid-state reaction (SSR) method. The structures of the phosphors were analyzed by X-ray diffraction (XRD), Fourier-transform infrared (FTIR) and Raman studies. The band at ~282 nm in the excitation spectra indicated the charge transfer band (CTB) of B-O in the host, whereas the CTB of Eu-O was observed at ~275 nm for the NaSrB₅O₉:Eu³⁺ (Eu³⁺=1 at.%) phosphor, which was supported by diffuse reflectance spectroscopy (DRS) measurements. The photoluminescence (PL) measurements exhibited a strong red emission band centered at about 616 nm (⁵D₀→⁷F₂) under an excitation wavelength of 394 nm (⁷F₀→⁵L₆). Upon host excitation at 282 nm, the pristine NaSrB₅O₉ exhibited a broad UV emission centered at ~362 nm. The energy transfer from host to Eu³⁺ ions was confirmed from luminescence spectra, excited with a 355 nm Nd:YAG laser. In addition, the asymmetric ratios indicate a higher local symmetry around the Eu³⁺ ion in the host. The calculated CIE (Commission International de l′Eclairage) coordinates displayed excellent color purity efficiencies (around 99.7%) compared to other luminescent materials.     

Effect of Ca and Sr alkaline earth ions on luminescence properties of BaAl12O19:Eu nanophosphor

Nanosized barium aluminate materials was doped by divalent cations (Ca²⁺, Sr²⁺) and Eu²⁺ having nominal compositions Ba_1−xMxAl₁₂O₁₉:Eu (M=Ca and Sr) (x=0.1-0.5), were synthesized by the combustion method. These phosphors were characterized by XRD, scanning electron microscopy-energy-dispersive spectrometry (SEM-EDS) and photoluminescence measurement. The photoluminescence characterization showed the presence of Eu ion in divalent form which gave emission bands peaking at 444 nm for the 320 nm excitation (solid-state lighting excitation), while for 254 nm it gave the same emission wavelength of low intensity (1.5 times) compared to 320 nm excitation. It was also observed that alkaline earth metal (Ca²⁺ and Sr²⁺) dopants increase the intensity of Eu²⁺ ion in BaAl₁₂O₁₉ lattice, thus this phosphor may be useful for solid-state lighting.     

Luminescence investigation of red phosphors Ca0.54Sr0.34−1.5xEu0.08Smx(MoO4)y (WO4)1−y for UV-white LED device

Ca_0.54Sr_0.34−1.5xEu_0.08Sm_x(MoO₄)_y (WO₄)_1−y red phosphors were prepared by solid-state reaction using Na⁺ as a charge compensator for light-emitting diodes (LED). The effects of Na⁺ concentration, synthesis temperature, reaction time and Eu³⁺ concentration were studied for the properties of luminescence and crystal structure of red phosphors. The results show that the optimum reaction condition is 6%, 900 °C, 2 h and 8%. The photoluminescence spectra show that red phosphors are effectively excited at 616 nm by 292, 395 and 465 nm. The wavelengths of 465 nm nicely match the widely applied emission wavelengths of blue LED chips.     

Eu-activated Ba2Mg(BO3)2 yellow-emitting phosphors for near ultraviolet-based light-emitting diodes

A series of Eu²⁺-activated Ba₂Mg(BO₃)₂ yellow phosphors were prepared by a high temperature solid-state reaction. The phosphor emits intense yellow light under near ultraviolet excitation. Large Stokes shift can be attributed to the asymmetric nature of the Eu site and the lack of rigidity in the host. The concentration self-quenching mechanism of Ba₂Mg(BO₃)₂:Eu²⁺ is d-d interaction and the critical transfer distance is calculated to be about 12.29 Å. Prototype light-emitting diodes were fabricated by coating the Ba₂Mg(BO₃)₂:0.07Eu²⁺ phosphor onto ∼370 nm-emitting InGaN chips. The LEDs exhibit intense yellow-emitting under a forward bias of 20 mA. The results indicate that Eu²⁺-activated Ba₂Mg(BO₃)₂ is a candidate as a yellow component for fabrication of near-UV white light-emitting diodes.     

Luminescence properties of Y2WO6:Eu incorporated with Mo or Bi ions as red phosphors for light-emitting diode applications

In this study, the red phosphors, Y₂W_1−xMo_xO₆:Eu³⁺ and Y₂WO₆:Eu³⁺,Bi³⁺, have been investigated for light-emitting diode (LED) applications. In Y₂WO₆:Eu³⁺, the excitation band edge shifts to longer wavelength with the incorporation of Mo⁶⁺ or Bi³⁺ ions. The emission spectra exhibit ⁵D₀→⁷F₁ and ⁵D₀→⁷F₂ transition of Eu³⁺ ion at 588, 593, and 610 nm, respectively. Moreover, the bluish-green luminescence of the WO₆⁶⁻ at about 460 nm is observed to decrease with the incorporation of Mo⁶⁺, which results in pure red color. Thus, this study shows that the red phosphor, Y₂WO₆:Eu³⁺, incorporated with Mo⁶⁺ or Bi³⁺ ions is advantageous for LEDs applications.     

Luminescent properties of Eu-activated Sr3B2SiO8: A red-emitting phosphor for white light-emitting diodes

Single-phased Sr₃B₂SiO₈:Eu³⁺ phosphor was prepared by a solid-state method at 1020 °C. The luminescence spectra showed that Sr₃B₂SiO₈:Eu³⁺ phosphor can be effectively excited by near ultraviolet light (393 nm) and blue light (464 nm). When excited at 393 or 464 nm Sr₃B₂SiO₈:Eu³⁺ exhibited the main emission peaks at 611 and 620 nm, which resulted from the supersensitive ⁵D₀→⁷F₂ transition of Eu³⁺. The luminescence intensity of Sr₃B₂SiO₈:Eu³⁺ at 611 and 620 nm reached the maximum when the doping content of Eu³⁺ was 4.5 mol%. Its chromaticity coordinates (0.646, 0.354) were very close to the NTSC standard values (0.67, 0.33). Thus, Sr₃B₂SiO₈:Eu³⁺ is considered to be an efficient red-emitting phosphor for long-UV InGaN-based light-emitting diodes.     

Intense green/yellow emission in Ca8Zn(SiO4)4Cl2:Eu, Mn through energy transfer for blue-LED lighting

Eu²⁺ and Mn²⁺ co-doped Ca₈Zn(SiO₄)₄Cl₂ phosphors have been synthesized by a high temperature solid state reaction. Energy transfer from Eu²⁺ to Mn²⁺ is observed. The emission spectra of the phosphors show a green band at 505 nm of Eu²⁺ and a yellow band at 550 nm of Mn²⁺. The excitation spectra corresponding to 4f⁷-4f⁶5d transition of Eu²⁺ cover the spectral range of 370-470 nm, well matching UV and/or blue LEDs. The shortening of fluorescent lifetimes of Eu²⁺ followed by simultaneous increase of fluorescent intensity of Mn²⁺ with increasing Mn²⁺ concentrations is studied based on energy transfer. Upon blue light excitation the present phosphor can emit intense green/yellow in comparison with other chlorosilicate phosphors such as Eu²⁺ and Mn²⁺ co-doped Ca₈Mg(SiO₄)₄Cl₂ and Ca₃SiO₄Cl₂, demonstrating a potential application in phosphor converted white LEDs.     

Synthesis and luminescence properties of red-emitting phosphors NaY0.87Eu0.13(WO4)1.2(MoO4)0.8

A series of NaY_1−yEu_y(WO₄)_2−x(MoO₄)_x (x=0−2 and y=0.06−0.15) phosphors have been prepared by a combustion route. X-ray powder diffraction, photoluminescence excitation and emission spectra were used to characterize the resulting samples. The excitation spectra of these phosphors show the strongest absorption at about 396 nm, which matches well with the commercially available n-UV-emitting GaN-based LED chip. Their emission spectra show an intense red emission at 616 nm due to the ⁵D₀→⁷F₂ electric dipole transition of Eu³⁺. As the Mo content increases, the intensity of the ⁵D₀→⁷F₂ emission of Eu³⁺ activated at wavelength of 396 nm increases and reaches a maximum when the relative ratio of Mo/W is 2:3. The intense red-emission of the tungstomolybdate phosphors at near-UV excitation suggests that the material is a potential candidate for white light emitting diode (WLEDs).     

Preparation and luminescent properties of BaCa2Si3O9:Eu

A blue emitting phosphor of the triclinic BaCa₂Si₃O₉:Eu²⁺ was prepared by the combustion-assisted synthesis method and an efficient blue emission ranging from the ultraviolet to visible was observed. The luminescence and crystallinity were investigated using luminescence spectrometry and X-ray diffractometry (XRD), respectively. The emission spectrum shows a single intensive band centered at 445 nm, which corresponds to the 4f⁶5d¹→4f⁷ transition of Eu²⁺. The excitation spectrum is a broad extending from 260 to 450 nm, which matches the emission of ultraviolet light-emitting diodes (UV-LEDs). The critical quenching concentration of Eu²⁺ in BaCa₂Si₃O₉:Eu²⁺ phosphor is about 0.05 mol. The corresponding concentration quenching mechanism is verified to be a dipole-dipole interaction. The CIE of the optimized sample Ba_0.95Ca₂Si₃O₉:Eu_0.05²⁺ was (x, y)=(0.164, 0.111). The result indicates that BaCa₂Si₃O₉:Eu²⁺ can be potentially useful as a UV radiation-converting phosphor for white light-emitting diodes (LEDs).     

Intense green-emitting Sr2LiSiO4F:Eu2+ phosphor for n-UV white LEDs

Eu²⁺-activated Sr₂LiSiO₄F phosphors were synthesized at 900°C by solid-state reaction in reducing atmosphere, and their photoluminescence (PL) properties were systematically investigated by diffuse reflection spectra, PL excitation and emission spectra, and by the fluorescence decay curve. Sr₂LiSiO₄F:Eu²⁺ emits intense green light at 520 nm originating from the 5d¹4f⁶−4f⁷ transition of Eu²⁺ under 365 nm n-UV excitation. The PL excitation spectrum matches the emission from n-UV chips. These materials could be promising green phosphors for use in generating white light in phosphor-converted white light-emitting-diodes (LEDs).