Effect of substrate and molecular weight on the stability of thin films of semicrystalline block copolymers

The thermal stability of the thin film morphology of two symmetric oxyethylene/oxybutylene block copolymers (E76B38 and E114B56) on mica and silicon was investigated via atomic force microscopy (AFM). It is found that morphological transition of EmBn thin films during melting is strongly dependent on the molecular weight of the diblock copolymers and their interaction with the substrate. For E76B38 on mica, a single-layered structure transforms into a double-layered structure upon melting, but the same polymer on silicon retains a single-layered structure after melting and spreads quickly to wet-out the silicon surface. Conversely a longer polymer, E114B56, has a thin film on mica that does not change much after melting of the crystalline E block. A mechanism was proposed to explain the relative stability of E76B38 and E114B56 thin films upon melting. Internal stress is produced during melting and can be released along two directions. The release along the vertical direction is restricted by the energy barrier related to the segregation strength, and the release along the horizontal direction is dependent on the mobility of block copolymer related to the interaction between the block copolymer and the substrate. Domain size affects the release rate of the internal stress along the horizontal direction and thus the thermal stability of EmBn thin films. Switching between horizontal and vertical releases can be realized by controlling the domain size of the thin films.     

Conducting AFM and 2D GIXD studies on pentacene thin films

Among all organic semiconductors, pentacene has been shown to have the highest thin film mobility reported to date. The crystalline structure of the first few pentacene layers deposited on a dielectric substrate is strongly dependent on the dielectric surface properties, directly affecting the charge mobility of pentacene thin film OTFTs. Herein, we report that there is a direct correlation between the crystalline structure of the initial submonolayer of a pentacene film and the mobility of the corresponding 60-nm-thick films showing terrace-like structure, as confirmed by 2D grazing-incidence X-ray diffraction and atomic force microscopy. Specifically, multilayered pentacene films, grown from single crystal-like faceted islands on HMDS-treated surface, have shown much higher charge mobility (mu = 3.4 +/- 0.5 cm2/Vs) than those with polycrystalline dendritic islands (mu = 0.5 +/- 0.15 cm2/Vs) on OTS-treated ones.     

Correlation of the number of thiophene units with structural order and carrier mobility in unsubstituted even- and odd-numbered alpha-oligothiophene films

We investigate the correlation of the number of thiophene units with the structural order and carrier mobility of the films through studies on thin-film transistors (TFTs) based on alpha-quinquethiophene (5T), alpha-sexithiophene (6T), and alpha-septithiophene (7T). The X-ray diffraction (XRD) data of the nT films deposited at low substrate temperatures present obviously different structural orders depending on the parity of the number of thiophene units. Although even-numbered nT films present well-ordered structures and large carrier mobilities, odd-numbered nT films present two different crystalline polymorphs and vastly low carrier mobilities reflecting the coexistence of two crystalline polymorphs. However, the XRD data of both even- and odd-numbered nT films deposited at high substrate temperatures indicate that the nT molecules form single well-ordered structures. Those ordered TFTs exhibit large carrier mobilities accompanying an increase in the number of thiophene units, 0.05, 0.08, and 0.13 cm2 V(-1) s(-1) for 5T, 6T, and 7T, respectively. The parity of the number of thiophene units affects the structural order intrinsically in grown thin films, and affects carrier mobilities extrinsically in their TFTs.     

聚羟基丁酸酯共聚物超薄膜中向日葵晶形成的原子力显微镜观察

低维数下的高分子(如在二维薄膜或一维管道及孔洞中)的各种行为由于更加触及高分子的动力学、热力学本质而逐渐成为高分子科学研究的热点之一．实验表明,薄膜中聚合物的玻璃化转变温度、结晶动力学及形貌等与本体有很大的偏离．我们先前的研究结果表明,在基板的作用下,共混物薄膜的相形态会发生逆转;     

Hydrogel characteristics of electron-beam-immobilized poly(vinylpyrrolidone) films on poly(ethylene terephthalate) supports

A novel strategy for the preparation of thin hydrogel coatings on top of polymer bulk materials was elaborated for the example of poly(ethylene terephthalate) (PET) surfaces layered with poly(vinylpyrrolidone) (PVP). PVP layers were deposited on PET foils or SiO2 surfaces (silicon wafer or glass coverslips) precoated with PET and subsequently cross-linked by electron beam treatment. The obtained films were characterized by ellipsometry, X-ray photoelectron spectroscopy, infrared spectroscopy in attenuated total reflection, atomic force microscopy (AFM), and electrokinetic measurements. Ellipsometric experiments and AFM force-distance measurements showed that the cross-linked layers swell in aqueous solutions by a factor of about 7. Electrokinetic experiments indicated a strong hydrodynamic shielding of the charge of the underlying PET layer by the hydrogel coatings and further proved that the swollen films were stable against shear stress and variation of pH. In conclusion, electron beam cross-linking ofpreadsorbed hydrophilic polymers permits a durable fixation of swellable polymer networks on polymer supports which can be adapted to materials in a wide variety of shapes.     

Effect of substrate surface on dewetting behavior and chain orientation of semicrystalline block copolymer thin films

Three symmetrical semicrystalline oxyethylene/oxybutylene block copolymers (EmBn) were spin-coated on different substrates including silicon, hydrophobically modified silicon, and mica. The effects of surface property on the dewetting behavior of EmBn thin films and the chain orientation of the crystalline block were investigated with atomic force microscopy and grazing incidence X-ray diffraction . The EmBn thin films on silicon exhibit an autophobic dewetting behavior, while ordinary dewetting occurs for the thin films on modified silicon. It was observed that the stems of the E crystals in the first half-polymer layer contacting the mica surface were parallel to the surface, in contrast to the perpendicular chain orientation of the other polymer layers and of the first half-polymer layer on silicon. This is attributed to the strong interaction between the E block and mica, verified by infrared spectra.     

Elemental composition analysis of silicon carbonitride thin films by energy dispersive spectroscopy

Specific features of elemental composition analysis of silicon carbonitride thin films by energy dispersive spectroscopy (EDS) are considered. The films were preliminarily examined by IR spectroscopy, X-ray photoelectron spectroscopy (XPS), scanning electron (SEM) and atomic force microscopy (AFM), and X-ray diffraction analysis using synchrotron radiation (SR-XRD) to acquire data on their chemical and phase composition, crystalline structure and surface morphology. The effect of film thickness, substrate material and electron beam energy on the results of energy dispersive analysis was investigated.     

Fabrication of electrochemical transistor based on pi-conjugate polymer Langmuir-Blodgett film

We fabricated an efficient organic electrochemical transistor (OECT) composed of polymer Langmuir-Blodgett (LB) film. The pi-conjugated polymer LB film, which was constructed from a poly(N-dodecylacrylamide) (pDDA) and poly(3-hexylthiophene) (PHT) mixture, was used as a conduction channel layer to connect source and drain electrodes. The mixed-polymer LB film was characterized using UV-vis spectroscopy, X-ray diffraction (XRD), atomic force microscopy (AFM), and cyclic voltammetry. Subsequent UV spectra measurements, XRD measurements, and AFM measurements show that PHT forms a crystalline lamellar domain in the layered structure of pDDA. The OECT included 10 layers of the mixed-polymer LB film as the conduction channel layer. The OECT showed an on/off ratio of 1.1x10(4) and mobility of 7.5x10(-2) cm2 V(-1) s(-1) at low gate (VG=-1.2 V) and source-drain voltages (VDS=-0.5 V). Moreover, the necessary charge to operate the OECT was 1.1x10(-9) mol of e(-1) cm(-2), which was 2 orders smaller than the value reported using a similar device structure. The relatively high on/off ratio and low charge consumption suggest that this OECT, which is fabricated from pi-conjugated polymer LB films, is applicable to macroelectronic devices.     

Lamination method for the study of interfaces in polymeric thin film transistors

A method for the fabrication of polymeric thin-film transistors (TFTs) by lamination is described. Poly(dimethylsiloxane) stamps were used to delaminate thin films of semiconducting polymers from silicon wafers coated with a self-assembled monolayer (SAM) formed from octyltrichlorosilane. These supported films were laminated onto electrode structures to form coplanar TFTs. The fabrication process was used to make TFTs with poly(3-hexylthiophene), P3HT, and poly[5,5'-bis(3-dodecyl-2-thienyl)-2,2'-bithiophene], PQT-12. TFTs, where these polymers were laminated onto gate dielectrics coated with SAMs from octyltrichlorosilane, had effective field-effect mobilities of 0.03 and 0.005 cm2/(V s), respectively. TFTs where PQT-12 was laminated onto gate dielectrics that were not coated with a SAM also had mobility of 0.03 cm2/(V s). In contrast, TFTs fabricated by spin-coating PQT-12 onto the same structure had mobilities ranging from 10-3 to 10-4 cm2/(V s). These results suggest that the lower mobilities of polymer TFTs made with hydrophilic gate dielectrics are caused by molecular ordering in the semiconducting film rather than electronic effects of dipolar groups at the interface.     

Thickness-dependent molecular chain and lamellar crystal orientation in ultrathin poly(di-n-hexylsilane) films

The molecular chain and lamellar crystal orientation in ultrathin films (thickness < 100 nm) of poly-(di-n-hexylsilane) (PDHS) on silicon wafer substrates have been investigated by using transmission electronic microscopy, wide-angle X-ray diffraction, atomic force microscopy, and UV absorption spectroscopy. PDHS showed a film thickness-dependent molecular chain and lamellar crystal orientation. Lamellar crystals grew preferentially in flat-on orientation in the monolayer ultrathin films of PDHS, i.e., the silicon backbones were oriented along the surface-normal direction. By contrast, the orientation of lamellar crystals was preferentially edge-on in ultrathin films thicker than ca. 13 nm, i.e., the silicon backbones were oriented parallel to the substrate surface. We interpret the different orientations of molecular chain and lamellar crystal as due to the reduction of the entropy of the polymer chain near the substrate surface and the particularity of the crystallographic (001) plane of flat-on lamellae, respectively. A remarkable influence of the orientations of the silicon backbone on the UV absorption of these PDHS ultrathin films was observed due to the one-dimensional nature of sigma-electrons delocalized along the silicon backbone. With the silicon backbones perpendicular or parallel to the surface of the substrate, the UV absorbance increased or decreased with an increase of the angle between the incident UV beam direction and direction normal to the thin film, respectively.     

Multiscale self-organization of the organic semiconductor alpha-quinquethiophene

We show that thin films grown by vacuum sublimation, or formed by melted powders, of semiconductor alpha-quinquethiophene (T5) exhibit a hierarchical self-affinity organization that spans scales from tens of nanometers to hundreds of micrometers. T5 organization was investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), and optical microscopy. XRD showed that vacuum-evaporated T5 films were characterized by a preferred orientation of the h00 planes parallel to the glass substrate. Melting of the films followed by rapid quenching to room temperature led to the formation of micrometer-sized, single-crystal-like structures, characterized by uniaxially aligned stripes. XRD proved that the melting-quenching process enhanced molecular ordering and increased the size of domains with the molecule's long axes tilted by about 65 degrees with respect to the substrate plane and piled up side-by-side along parallel columns. AFM measurements on the melt-quenched structures showed that a hierarchical architecture was built by reiteration across multiple length scales of the same recurring motif. Because of the tendency of T5 to form highly crystalline vacuum-evaporated thin films, a field-effect hole mobility comparable to state-of-the-art FET mobility of alpha-sexithiophene films was reached, without any attempt to optimize deposition conditions.     

Structure versus electron effects in the growth mode of pentacene on metal-induced Si(111)-square root(3) x square root(3) surfaces

The growth of pentacene films on different metal (Ga, Pb, Bi, Ag) induced Si(111)-(square root(3) x square root(3))R30 degrees surfaces is investigated by scanning tunneling microscopy. On surfaces with high atomic surface roughness, such as GaSi-square root(3), beta-PbSi-square root(3), and alpha-BiSi-square root(3), pentacene forms an initial disordered wetting layer followed by the growth of crystalline thin films. The growth behavior is independent of the metallicity of the substrate surface in this regime. On the other hand, on surfaces with low adatom surface roughness, pentacene molecules form self-organized structures without forming a wetting layer. Moreover, the molecular orientation is critically dependent on the surface metallicity. This work reveals that the growth mode of pentacene on solid surfaces is determined by the combined effects of structural and electronic properties of the substrate.     

Partial dewetting of polyethylene thin films on rough silicon dioxide surfaces

The effect of roughness on the dewetting behavior of polyethylene thin films on silicon dioxide substrates is presented. Smooth and rough silicon dioxide substrates of 0.3 and 3.2-3.9 nm root-mean-square roughness were prepared by thermal oxidation of silicon wafers and plasma-enhanced chemical vapor deposition on silicon wafers, respectively. Polymer thin films of approximately 80 nm thickness were deposited by spin-coating on these substrates. Subsequent dewetting and crystallization of the polyethylene were observed by hot-stage optical microscopy in reflection mode. During heating, the polymer films melt and dewet on both substrates. Further observations after cooling indicate that, whereas complete dewetting occurs on the smooth substrate surface, partial dewetting occurs for the polymer film on the rough surface. The average thickness of the residual film on the rough surface was determined by ellipsometry to be a few nanometers, and the spatial distribution of the polymer in the cavities of the rough surface could be obtained by X-ray reflectometry. The residual film originates from the impregnation of the porous surface by the polymer fluid, leading to the observed partial dewetting behavior. This new type of partial dewetting should have important practical consequences, as most real surfaces exhibit significant roughness.     

Annealing-free high-mobility diketopyrrolopyrrole-quaterthiophene copolymer for solution-processed organic thin film transistors

A donor-acceptor polymer semiconductor, PDQT, comprising diketopyrrolopyrrole (DPP) and β-unsubstituted quaterthiophene (QT) for organic thin film transistors (OTFTs) is reported. This polymer forms ordered layer-by-layer lamellar packing with an edge-on orientation in thin films even without thermal annealing. The strong intermolecular interactions arising from the fused aromatic DPP moiety and the DPP-QT donor-acceptor interaction facilitate the spontaneous self-assembly of the polymer chains into close proximity and form a large π-π overlap, which are favorable for intermolecular charge hopping. The well-interconnected crystalline grains form efficient intergranular charge transport pathways. The desirable chemical, electronic, and morphological structures of PDQT bring about high hole mobility of up to 0.97 cm(2)/(V·s) in OTFTs with polymer thin films annealed at a mild temperature of 100 °C and similarly high mobility of 0.89 cm(2)/(V·s) for polymer thin films even without thermal annealing.     

Synthesis of thin dense titania films via an aqueous solution-gel method

Nanostructured titanium dioxide films have been reported to be used in many applications ranging from optics and solar energy devices to gas sensors. This work describes the synthesis of nanocrystalline titania films via an aqueous solution-gel method. The thin films are deposited by spin coating an aqueous citratoperoxo-Ti(IV)-precursor solution onto a silicon substrate. The influence of processing parameters like Ti⁴⁺ concentration and crystallization temperature on the phase formation, crystallite size and surface morphology of the films is studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and atomic force microscopy (AFM). Furthermore, the effect of successive layer deposition on the film thickness of the resulting films is studied by means of cross sectional SEM. SEM and TEM micrographs clearly show that, after optimization of the process parameters, thin, smooth, dense nanocrystalline films are synthesized in a reproducible manner. The films are composed of 15–20 nm grains. At higher crystallization temperatures (600, 650°C) also larger particles (40–70 nm) are present. XRD data reveal that a phase pure anatase film is formed at 450°C. Crystallization temperatures equal to or higher than 600 °C however give rise to the formation of both the anatase and rutile crystalline phases. The smoothness of the films is proved by their very low rms surface roughness (≤1.1 nm) measured by AFM.     

STRUCTURE OF CRYSTALLINE DOMAINS IN SEMICRYSTALLINE BLOCK COPOLYMER THIN FILMS

Thin film morphology of a symmetric semicrystalline oxyethylene/oxybutylene diblock copolymer （E76B38） on silicon was investigated by tapping mode atomic force microscopy （AFM）. It is found that the nascent thin film is composed of multiple polymer layers having mixed thicknesses of L ≈ L0 and L ≈ L0/2 （L0 is the long period of the block copolymer in bulk） besides the first layer near the substrate. This shows that the crystalline domain in the block copolymer consists of double poly（oxyethylene） layers. Annealing leads to disappearance of the polymer layers with thickness L ≈L0/2, indicating that such polymer layers are metastable.     

Studies of tetracene- and pentacene-based organic thin-film transistors fabricated by the neutral cluster beam deposition method

The neutral cluster beam deposition (NCBD) method has been applied to produce and characterize organic thin-film transistors (OTFTs) based upon tetracene and pentacene molecules as active layers. Organic thin films were prepared by the NCBD method on hexamethyldisilazane (HMDS)-untreated and -pretreated silicon dioxide (SiO2) substrates at room temperature. The surface morphology and structures for the tetracene and pentacene thin films were examined by atomic force microscopy (AFM) and X-ray diffraction (XRD). The measurements demonstrate that the weakly bound and highly directional neutral cluster beams are efficient in producing high-quality single-crystalline thin films with uniform, smooth surfaces and that SiO2 surface treatment with HMDS enhances the crystallinity of the pentacene thin-film phase. Tetracene- and pentacene-based OTFTs with the top-contact structure showed typical source-drain current modulation behavior with different gate voltages. Device parameters such as hole carrier mobility, current on/off ratio, threshold voltage, and subthreshold slope have been derived from the current-voltage characteristics together with the effects of surface treatment with HMDS. In particular, the high field-effect room-temperature mobilities for the HMDS-untreated OTFTs are found to be comparable to the most widely reported values for the respective untreated tetracene and pentacene thin-film transistors. The device performance strongly correlates with the surface morphology, and the structural properties of the organic thin films are discussed.     

Exploratory combustion synthesis: amorphous indium yttrium oxide for thin-film transistors

We report the implementation of amorphous indium yttrium oxide (a-IYO) as a thin-film transistor (TFT) semiconductor. Amorphous and polycrystalline IYO films were grown via a low-temperature solution process utilizing exothermic "combustion" precursors. Precursor transformation and the IYO films were analyzed by differential thermal analysis, thermogravimetric analysis, X-ray diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, and optical transmission, which reveal efficient conversion to the metal oxide lattice and smooth, transparent films. a-IYO TFTs fabricated with a hybrid nanodielectric exhibit electron mobilities of 7.3 cm(2) V(-1) s(-1) (T(anneal) = 300 °C) and 5.0 cm(2) V(-1) s(-1) (T(anneal) = 250 °C) for 2 V operation.     

Collapse transition in thin films of poly(methoxydiethylenglycol acrylate)

The thermal behavior of poly(methoxydiethylenglycol acrylate) (PMDEGA) is studied in thin hydrogel films on solid supports and is compared with the behavior in aqueous solution. The PMDEGA hydrogel film thickness is varied from 2 to 422?nm. Initially, these films are homogenous, as measured with optical microscopy, atomic force microscopy, X-ray reflectivity, and grazing-incidence small-angle X-ray scattering (GISAXS). However, they tend to de-wet when stored under ambient conditions. Along the surface normal, no long-ranged correlations between substrate and film surface are detected with GISAXS, due to the high mobility of the polymer at room temperature. The swelling of the hydrogel films as a function of the water vapor pressure and the temperature are probed for saturated water vapor pressures between 2,380 and 3,170?Pa. While the swelling capability is found to increase with water vapor pressure, swelling in dependence on the temperature revealed a collapse phase transition of a lower critical solution temperature type. The transition temperature decreases from 40.6?°C to 36.6?°C with increasing film thickness, but is independent of the thickness for very thin films below a thickness of 40?nm. The observed transition temperature range compares well with the cloud points observed in dilute (0.1?wt.%) and semi-dilute (5?wt.%) solution which decrease from 45?°C to 39?°C with increasing concentration.     

右旋聚乳酸薄膜的结晶形态

利用旋涂法制备一系列右旋聚乳酸(PDLA)均聚物薄膜, 在不同溶液浓度、结晶温度、结晶时间、溶剂和基底条件下对其进行等温结晶处理, 得到直径和长度大小不等的短棒和纤维束球状等形态, 利用原子力显微镜(AFM)研究了不同条件下所得到的PDLA薄膜的结晶形态. 提出了可能的结晶演变过程和生长模型. 通过控制不同的结晶条件, 可以得到PDLA均聚物薄膜的不同结晶形态.