表面热透镜技术测量3.8μm和2.8μm激光薄膜的微弱吸收

 采用表面热透镜技术，对3.8μm和2.8μm激光辐照下镀制在Si基底上的单层ZnS，YbF₃和YBC薄膜及不同膜系的YbF₃/ ZnS多层分光膜和多层高反膜，以及镀制在CaF₂基底上的增透膜进行了吸收测量，并对3.8μm和2.8μm 激光的测量结果进行了比较分析。实验结果表明，2.8μm波长下的吸收比3.8μm的大得多，两者之间约相差一个量级，测得的多层高反膜YbF₃/ZnS薄膜在的3.8μm处的最低吸收为4.57×10^－4，测量系统的灵敏度约为10^-5。     

产生蓝色相干辐射和实现Nd:YAG 1.0642μm倍频90°非临界相位匹配的Nb:KTiPO4

本文报道了用熔盐顶部籽晶法生长Nb浓度(0～13)mol%的Nb:KTP晶体的倍频的Ⅱ型相位匹配的截止波长和Nd:YAG1.0642μm及Nd:YA1O₃1.0795μm激光在这些晶体中倍频的最佳相位匹配角的测量结果.从中可看出,由于Nb⁵⁺的引入使KTP晶体倍频的Ⅱ相位匹配的截止波长有效蓝移,目前已使截止波长蓝移至937nm且有效产生468.5nm的倍频蓝光.同时Nb⁵⁺的引入使Nd:YAG1.0642μm激光和Nd:YA1O₃倍频的最佳相位匹配方向产生很大的变化,目前已使Nb:KTP晶体倍频的最佳相位匹配方向为θ=88.32°、Φ=0°,非常接近于90°非临界相位匹配方向.     

自锁模飞秒掺铬的镁橄榄石激光器的实验研究

用波长为1.06μm的Nd:YAG激光器泵浦Cr⁴⁺:forsterite晶体,实现了Cr⁴⁺:forsterite激光器的自锁模飞秒激光运转,在吸收泵浦功率为8W的条件下,得到了脉冲宽度为85fs,中心波长为1246nm,平均输出功率为200mW的稳定锁模输出。     

新型晶体Nd:S-VAP激光特性研究

测量了 Nd:S-VAP[Nd:Sr₅(VO₄)₃F]晶体的吸收光谱特性,在583.0nm 和809.0nm处有强烈的吸收峰.用可调谐染料激光泵浦实现了低阈值、高效率的激光运转.在透射率15%的平-平腔情况下,斜率效率为50%,阈值2mJ,倍频绿光的中心波长为536.0nm,线宽为1.4nm.采用φ4mm×30mm 的氙灯泵浦,实现了自由运转和染料片调 Q 运转.阈值为130mJ,斜效率为1.3%.测量了不同腔长、不同染料片小信号透射率情况下的输出能量、脉冲宽度以及光束发散角和偏振特性等.     

宽带腔增强吸收光谱技术应用于痕量气体探测及气溶胶消光系数测量

基于氙灯的非相干宽带腔增强吸收光谱系统, 并将其应用于痕量气体及气溶胶消光系数的测量. 该系统的探测灵敏度通过测量NO₂在520—560 nm波长范围内的吸收得到验证, 最小可探测灵敏度为1.8× 10^-7cm^-1 (1σ, 0.12 s积分时间, 50次平均), 对应的NO₂探测极限～33 nmol/mol. 结合标准气溶胶粒子发生系统, 测量了不同浓度的单分散硫酸铵气溶胶粒子在532 nm波长处的消光系数, 得到粒径为600 nm的硫酸铵气溶胶的消光截面为1.12× 10^-8cm², 与文献报道值1.167× 10^-8cm²相一致, 验证了气溶胶测量的可行性和准确性.     

LiKGdF5:Er,Dy单晶的UV、VUV光谱和量子剪裁

报道了LiKGdF₅:Er(2%),Dy(0.4%)单晶在紫外激光和同步辐射真空紫外光激发下的光谱特性,讨论了在不同激光(He-Cd激光,325nm;3倍频的YAG:Nd激光,355nm)激发下Er³⁺离子和Dy³⁺离子的相对发射强度及其物理原因.通过真空紫外区激发光谱的测量,确定了Dy³⁺离子的4f⁸5d吸收带以及Er³⁺离子的4f¹⁰5d吸收带的能量位置.实验结果表明,用156.6nm的高能光子激发Er³⁺离子的4f¹⁰5d吸收带,可以产生量子效率高达200%的量子剪裁现象,并给予了合理的解释.     

向列相液晶染料可调谐激光器的研究

对向列相液晶染料的可调谐激光器进行了光学特性研究. 以650 nm为中 心波长设计了SiO₂和TiO₂多层膜的一维光子晶体, 以激光染料与向列相液晶的混合物作为增益介质层, 制备了波长可调谐激光器.用Nd: YAG倍频脉冲激光器输出的532 nm激光抽运所制备的激光器样品得出如下光学特性: 激光发射波长随温度调谐范围为605.5---639.8 nm, 达到34.3 nm, 随电压调谐范围为634.5---619.5 nm, 达到15 nm. 发射激光每脉冲的阈值能量为12.3 μJ, 激光线宽小于1 nm.     

中心波长2.33 μm附近CO和CH4分子的同时探测

 采用分布反馈式半导体激光器作为探测光源,结合程长为100 m的离散型多通吸收池,采用直接吸收光谱技术,对室温下中心波长2.33 μm附近各种低体积分数的CO及混合气体（CO,CHCH₄和N₂）的直接吸收光谱进行了测量。选择CO在4 288.289 8 cm^-1位置的吸收谱线和CH₄在4 287.650 15 cm^-1处的吸收谱线进行痕量探测,在40 698 Pa的总压力下,实验测得CO的探测极限为8.15×10^-6(信噪比约为216）,CH4的探测极限为18.48×10^-6(信噪比约为147）。     

1.315μm附近CO2的高分辨率吸收光谱

 利用可调谐激光长程吸收光谱测量系统，记录到1.315μm附近高气压（80kPa和40kPa）CO₂的高分辨率吸收光谱，拟合分析获得谱线参数，结果与HITRAN 2k的数据基本一致。用程差法测量了绝对吸收，氧碘激光频率(7 603.138 5cm^-1)的总吸收截面为(0.23~0.29)×^-24cm²。仅计算谱线吸收的吸收截面为0.18×10^-24cm²。在1.315μm波段COCO₂存在连续吸收，吸收截面为(0.05~0.11)×10^-24cm²。还讨论了测量误差问题。     

用于白光LED的单一基质白光荧光粉Ca2SiO3Cl2:Eu2+，Mn2+的发光性质

用高温固相法合成了Eu²⁺，Mn²⁺共激活的Ca₂SiO₃Cl₂高亮度白色发光材料，并对其发光性质进行了研究. 该荧光粉在近紫外光激发下发出强的白色荧光，Eu^{2+中心形成峰值为419 nm和498 nm的特征宽带，通过Eu2+中心向Mn2+中心的能量传递导致了峰值为578 nm的发射，三个谱带叠加从而在单一基质中得到了白光. 激发光谱均分布在250—415 nm的波长范围，红绿蓝三个发射带的激发谱峰值分别位于385 nm，412 nm，370 nm和396 nm处，可以被InGaN管芯产生的紫外辐射有效激发. Ca₂SiO₃Cl₂:Eu2+，Mn2+是一种很有前途的单一基质白光LED荧光粉.}     

Laser characteristics of a new crystal Nd:Sr5(PO4)3F at 1.059 μm

The absorption spectrum of a new crystal Nd : Sr₅(PO₄)₃F or Nd : S-FAP, was measured, its two strong absorption peaks and broad effective absorption band showed that Nd : S-FAP can be appropriately pumped at 575 nm and 805.4 nm as well as with a xenon flashlamp. By using a tunable dye-laser (570.0~600.0 nm), a laser-diode (805 nm) and a xenon flash lamp as pump sources, respectively, the performance of a low threshold and high efficiency Nd:S-FAP laser at 1.059 (μm) (including pulse run, cw run, free-run and Q-switch run) has been demonstrated. The laser characteristics, such as the emission spectrum, the output energy, the output power, the pulse width, etc, were measured. In addition, the prospect of a Nd:S-FAP crystal for low-threshold high-efficiency miniature lasers is discussed.     

Efficient Lasing Demonstration of a New Crystal Nd: Sr_5 (PO_4)_3F

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Continuous-wave high-power multi-pass pumped thin-disc Nd:GdVO4 laser

A thin-disc Nd:GdVO₄ laser in multi-pass pumping scheme was developed. Continuous-wave output power of 13.9 W at 1.06 μm for an absorbed power at 808 nm of 22 W was demonstrated from a 250-μm thick, 0.5-at.% Nd:GdVO₄ in a 4-pass pumping; the slope efficiency in absorbed power was 0.65, or 0.47 in input power. Output performances were also investigated under diode laser pumping at 879 nm, directly into the emitting ⁴F_3/2 level: maximum power of 3.6 W was obtained at 6.2 W of absorbed power with 0.69 slope efficiency. Compared with pumping at 808 nm, into the highly absorbing ⁴F_5/2 level, improvements of laser parameter in absorbed power (increase of slope efficiency, decrease of threshold) were obtained, showing the advantages of the pumping into the emitting level. However, the laser performances expressed vs. the incident power were modest owing to the low absorption efficiency at 879 nm. Thus, increased number of passes of the medium would be necessary in order to match the performances in input power obtained under 808-nm pumping.     

Simultaneous dual-wavelength emission at 0.90 and 1.06 µm in Nd-doped laser crystals

Continuous-wave (CW) simultaneous laser emission on the 0.9-μm ⁴ F _3/2 → ⁴ I _9/2 transition and the ⁴ F _3/2 → ⁴ I _11/2 transition at 1.06 μm is obtained in Nd-based laser crystals of thin-disk geometry and using a multi-pass pumping scheme. A Nd:Y₃Al₅O₁₂ (Nd:YAG) thin disk emitted simultaneous laser radiation at 946 and 1064 nm with 5.1 W output power, and Nd:YVO₄ and Nd:GdVO₄ thin-disk lasers with more than 3 W output power at 0.91 and 1.06 μm were realized. The ratio between the output power at one of the wavelengths and the total output power could be varied by the laser resonator design. An intracavity frequency-doubled Nd:YVO₄ thin-disk laser with alternate green at 532 nm and “deep-blue” at 457 nm generation of high average output powers is demonstrated.     

High power diode-side-pumped rod Nd:GdVO4 laser

A compact high power diode-side-pumped Nd:GdVO₄ laser has been presented, which can generate an output power of 52 W at 1.063-μm for continuous-wave (CW) operation. The absorption characteristics of the Nd:GdVO₄ in different pump directions is measured, which were used to optimize the diode-side-pumped Nd:GdVO₄ laser head. The laser characteristics of both CW and Q-switched Nd:GdVO₄ and Nd:YAG in are compared and it was found that Nd:GdVO₄ may surpass Nd:YAG for high power laser application.     

Widely phase-matched tunable difference-frequency generation in periodically poled LiNbO3 crystal

We report on the development of a laser source in the mid-infrared spectral region based on difference-frequency generation (DFG) in a periodically poled LiNbO₃ (PPLN) crystal. Continuously tunable coherent radiation from 2.75 to 4.78 μm was produced by optical parametric interaction between a diode-pumped monolithic continuous-wave (CW) Nd:YAG laser operating at 1.064 μm and a CW Ti:Sapphire laser tunable from 767 to 871 nm. Temperature-dependent quasi-phase-matched DFG wavelength acceptance bandwidth was studied and characterized. An empiric formula is given to estimate the phase-matched wavelength acceptance bandwidth as a function of the crystal temperature at Λ = 22.5 μm. A large frequency scan of 128 cm⁻¹ (about 78 cm⁻¹ above 1 μW) near 4.2 μm was achieved. The whole absorption spectrum of the P and R branches of the ν₃ band of atmospheric carbon dioxide has been recorded with a single phase-matched frequency scan.     

In-band pumping of Nd-vanadate thin-disk lasers

We investigate the output performance of the 1.06 μm ⁴F_3/2→⁴I_11/2 transition in Nd:GdVO₄ and Nd:YVO₄ thin-disk lasers under multi-pass pumping with diode lasers at 0.81 μm and at 0.88 μm, which corresponds to direct in-band pumping of the ⁴F_3/2 emitting level. The use of a pump module with 24 passes through the crystal allowed the realization of an in-band pumped Nd:GdVO₄ thin-disk laser with 14.9 W of continuous wave (cw) output power at 1.06 μm; the overall optical-to-optical efficiency was 0.50 and the slope efficiency with respect to the incident pump power was 0.52. Intracavity frequency-doubling of the Nd:GdVO₄ thin-disk laser with a LiB₃O₅ (LBO) nonlinear crystal yielded 9.1 W of cw output power in the green at 0.53 μm with an overall optical-to-optical efficiency of 0.31.     

Effect of Nd concentration on structural and optical properties of Nd:Y2O3 transparent ceramic

Y₂O₃ transparent ceramics with different Nd concentration (0.1-7.0at%) were fabricated using ZrO₂ as additive. All the samples exhibit high transparency over a broad spectral region. The elements (Y, O and Nd) are uniformly distributed in the ceramic body, and the average grain size increases with Nd content. Based on the absorption spectrum, the Judd-Ofelt intensity parameters are calculated (Ω₂=4.364×10⁻²⁰ cm², Ω₄=3.609×10⁻²⁰ cm² and Ω₆=2.919×10⁻²⁰ cm²). The absorption coefficients increase linearly with Nd³⁺ doping concentration. The absorption cross-section at 804 nm and stimulated emission cross-section at 1078 nm are calculated to be 1.54×10⁻²⁰ and 7.24×10⁻²⁰ cm², respectively. All the emission bands exhibit the highest emission intensities with 1.0at% Nd³⁺ ion content, while the lifetime decreases dramatically from 321.5 μs (0.1at% Nd) to 17.9 μs (7.0at% Nd). According to the emission spectra and measured lifetime, the optimum doping concentration of Nd³⁺ ion in Y₂O₃ transparent ceramic might be around 1.0at%.