Site selectivities of alkali ions in CsRb2C60 and Cs2RbC60 superconductors

The temperature-dependent site selectivities of Cs and Rb ions in CsRb₂C₆₀ and Cs₂RbC₆₀ superconductors are computed using the free energy obtained from the configuration entropy and the total energy calculated using the ab initio pseudopotential density-functional theory. It is found that in CsRb₂C₆₀ the smaller Rb ions can occupy a considerable number of large octahedral interstitial sites at high temperatures, however, the transition to random occupation never takes place. For Cs₂RbC₆₀ the Cs occupancy of the large octahedral interstitial sites is almost always 100%, and, interestingly, the two tetrahedral interstitial sites are randomly occupied by Cs and Rb ions even at very low temperatures.     

Electronic structure of solid C48N12 aza-fullerene

I report electronic structures and the cohesive energy for face-centered-cubic (fcc) solid C₄₈N₁₂ using generalized-gradient density-functional theory. The full vibrational spectrum of the C₄₈N₁₂ cluster is calculated within the harmonic approximation at the B3LYP/6-31G* level of theory. The results show that fcc is energetically preferred and a more stable crystal form than body-centered-cubic (bcc). C₄₈N₁₂ clusters are found to condense by a weak (0.29 eV) van der Waals force. The band gap of fcc C₄₈N₁₂ is calculated to be 1.3 eV at the GGA-PW91 level, whereas the HOMO-LUMO gap is calculated to be 2.74 eV using B3LYP/6-31G*.     

C60单晶生长及特性的研究

用气相生长法生长了最大线度约为１．５ｍｍ的C₆₀单晶。单晶Ｘ射线衍射分析结果表明，该C₆₀单晶为ｆｃｃ结构，晶格常数为１．４１３ｎｍ，在２５１Ｋ附近与相变有关的电导率的尖锐跳变表明，C₆₀单晶具有很高的纯度和良好的均匀性。观察到在２７４Ｋ附近激活能的变化，这可能是另一个相变的反映。 关键词：     

C60分子在GaAs(001)表面的外延生长的扫描隧道显微镜研究

利用扫描隧道显微镜（STM）系统地研究了C₆₀薄膜在GaAs（001）表面的异质外延生长．在GaAs（001）2×4-β相表面，观察到C₆₀薄膜以非密排面进行生长，并在生长中有结构相变产生．实验数据表明，薄膜下层面心立方（fcc）的晶格常数比C₆₀晶体的晶格常数要大13%；而薄膜的表层结构则展示了非理想的六角密堆（hcp）结构，其表面为hcp（1100）面，生长过程是非理想的层状生长模式．在GaAs（001）-c（4×4）衬底上，C₆₀薄膜的表面仍然是fcc（111）面，其结构参数与C₆₀晶体一致，但C₆₀薄膜采用了三维模式进行生长 关键词：     

C60单晶的表面形貌与生长缺陷

用气相法生长出了毫米尺寸的具有规则晶面和金属光泽的高质量的纯C₆₀单晶.X射线衍射分析表明,C₆₀单晶在室温下具有面心立方(fcc)结构,晶格常数为α=1.4199(4)nm。用扫描电子显微镜和光学显微镜观察了C₆₀单晶的形貌,除观察到fcc结构的晶体所特有的{111}和{200}两种稳定晶面以及非常容易形成的孪晶之外,还发现了在{111}面上的树枝状、垄状和生长丘以及在{200}面上的树枝状、游泳池状和生长丘的生长缺陷。对C_{60 关键词：}     

Experimental access to doped fullerene polymers

60 compound could be obtained by slow cooling the high temperature fcc phase and by quenching with subsequent annealing. The various phases after quenching and during annealing were studied in detail. No evidence for a direct doping of undoped C₆₀ to the polymeric AC₆₀ phase was found. Due to the local character of the doping process the formation of A₃C₆₀ clusters is observed. The same results were obtained from doping experiments performed with undoped polymeric structures like phototransformed and pressure polymerized C₆₀. Received: 6 October 1996/Accepted: 13 December 1996     

X-ray diffraction and magnetic susceptibility of sodium fullerides NaxC60

The X-ray diffraction (XRD), magnetic susceptibility and electron spin resonance (ESR) measurements have been carried out for Na_xC₆₀. The XRD profiles with x<4 can be assigned to a face-centered cubic (fcc) lattice, while those with 4≦x to a hexagonal one. The temperature dependence of magnetic susceptibility χ for Na_xC₆₀ using SQUID was fitted to the Curie law, and estimated temperature-independent component χ₀. The composition x dependence of the χ₀ for Na_xC₆₀ shows two maxima at around x=3 and x=10, and minimum at x=6. The absence of Pauli contribution at x=6 was confirmed using ESR. A trace of superconducting transition at 14 K has been found for some Na_xC₆₀ specimens with 8<x<9.     

Rb掺杂C60单晶的相衍变和电子态

在C₆₀单晶超高真空解理面上制备C₆₀的Rb填隙化合物薄膜.用同步辐射光电子能谱研究了相衍变过程.观察到对应于固溶相、Rb₁C₆₀和Rb₃C₆₀的电子态密度分布.当数纳米厚Rb₃C₆₀薄膜在C₆₀单晶（111）解理面形成后，室温条件下进一步沉积Rb至样品表面不产生fcc到bct或bcc结构相变.C_{60 关键词： 4}C₆₀和Rb₅C₆₀吸附相')" href="#">金属性Rb₄C₆₀和Rb₅C₆₀吸附相 60单晶')" href="#">C₆₀单晶 相衍变 同步辐射光电子能谱     

A double-temperature-gradient technique for the growth of single-crystal fullerites from the vapor phase

Fullerite single crystals were prepared by a sublimation-condensation method in a closed evacuated glass tube situated in a double-temperature-gradient furnace. Crystals of various size and up to 9 mg weight with well expressed smooth and shiny faces were obtained. X-ray analysis, interfacial angle measurements and observed morphological habits of selected crystals of C₆₀ confirm the theoretically predicted and experimentally well established fcc structure at room temperature with two types of morphological faces, namely {111} and {100}. A strong tendency to twinning was observed. In the case of C₇₀ crystals, a pure fcc structure was observed. Information on growth kinetics and on instability versus exposure to air and light were obtained from surface studies. Characteristic changes in a thin surface layer were observed when crystals were exposed to air and light. A new phase of C₆₀ stabilized by oxygen was characterized.     

Polymeric sheets in Mg4C60

We present preliminary results on the preparation and structure of Mg₄C₆₀, a new fulleride polymer. A series of Mg_xC₆₀ compositions (0<x<6) were prepared by solid state reaction. While most samples were multiphase, a single phase material was obtained at the nominal composition Mg₄C₆₀. The X-ray diffraction pattern of Mg₄C₆₀ was successfully indexed and fitted to a rhombohedral structure based on two-dimensional polymeric sheets of C₆₀ ions. This result extends the family of fulleride polymers to the salts of multiply charged cations and thus opens a new direction in this field.     

织构C60薄膜的生长与光致发光特性

用Hot Wal方法，在氟金云母单晶上生长出了（111）织构的C₆₀薄膜．用X射线衍射、Raman散射、扫描电子显微镜和原子力显微镜研究了织构C₆₀薄膜的结晶质量和结构特性．测量了织构C₆₀薄膜在室温300K和低温77K的光致发光光谱．对所得结果进行了分析与讨论 关键词：     

Pressure-induced phase transition in an orthorhombic C60 crystal

X-ray diffraction studies of an orthorhombic C₆₀ single crystal grown from CS₂ solution have revealed a phase transition to a monoclinic phase between 1.1 and 2.2GPa. Compressibility of three principal axes is measured up to 3GPa and found to be nearly isotropic. Its bulk modulus is obtained as 10.5±1.9GPa, and this crystal is more compressible than an fcc one. We discuss the structural characteristic differences under pressure between the orthorhombic crystal and the fcc crystal.     

Anomalous phase transformation in magnetostrictive Fe81Ga19 alloy

In this work, we have investigated the room-temperature phase constitution of heat-treated Fe₈₁Ga₁₉ alloys cooled from 800 °C at different rates. Results show that at cooling rates in the range from 0.43 to 0.26 °C/min, in addition to the A2 matrix, an fcc phase also can be observed in Fe₈₁Ga₁₉ samples at room temperature. To investigate the precipitation of the fcc phase out of A2 matrix, a systematic study of phase constitution was carried out on the samples quenched from different temperatures during cooling from 800 °C at 0.32 °C/min, which reveals an anomalous phase transformation between A2 and fcc. Precipitation of the fcc phase from A2 matrix occurs at 500 °C and its volume fraction exhibits a sharp increase at 400 °C. However, it begins to dissolve when further decreasing the temperature and only a minor fcc phase can be retained at room temperature, which suggests that the fcc phase is metastable below 400 °C. Magnetic measurements indicate that the precipitation of fcc phase deteriorates the saturation magnetization of Fe₈₁Ga₁₉.     

High-field electron paramagnetic resonance study of the polymerization in Na2Rb1−x Cs x C60

We report on the study of the magnetic properties of the low-temperature polymer phases in N₂Rb_1?xCs_xC₆₀ at 110 GHz microwave frequency withx varying between 0 and 1. The magnetic and structural properties of the polymer phase strongly depend on the Cs content and its electronic structure progressively becomes quasi-one-dimensional asx is increased. While the electronic properties of the polymeric Na₂RbC₆₀ appear to be close to three-dimensional metal, Na₂Rb_0.3Cs_0.7C₆₀ shows characteristics of quasi-one-dimensional metal where instability in the electronic structure was found as detected by the sudden disappearance of the ESR intensity due to the opening of the gap at the Fermi surface. The observation of an additional resonance line below 15 K, which could be attributed to antiferromagnetic resonance, suggests that the low-temperature polymeric phase in Na₂Rb_0.3Cs_0.7C₆₀ has a well-defined magnetic ground state.     

Low-temperature phase transformations in weakly doped quantum paraelectrics: novel features and quantum reentrant dipolar glass state in KTa0.982Nb0.018O3

An unusual sequence of phase transitions (PT) and reentrant dipole glass-like phase formation at low temperatures was found recently in KTaO₃ weakly doped with Li and Nb (K_0.9986Li_0.0014Ta_0.976Nb_0.024O₃) [Phys. Rev. B 63 (2001) 172]. We report on detailed low frequency (100 Hz-1 MHz) permittivity and Raman light scattering studies of similar composition, but without Li admixture, KTa_1−xNb_xO₃ with x=0.018 (KTN1.8). The aim of the study is to answer the question if the reentrant dipole glass-like phase exists in KTN1.8 and what is the microscopic origin of this phase. A detailed study of the sharp low-temperature PT observed at T_C∼27 K revealed properties inherent to the reentrant glass-type state at lower temperatures. The substitution of Nb for Ta influences the TO₁ soft lattice mode and leads to PT with the long-range ferroelectric ordering. A crossover to an order-disorder polar microregion dynamics with a non-standard ε′(T) behaviour and dipole glass-like formation were found below T_C (at ∼15 K), which is attributed to the randomness of the Nb distribution. A crossover to the long-range order was found under a dc bias field.     

Depth profiling using C60 SIMS—Deposition and topography development during bombardment of silicon

A C₆₀⁺ primary ion source has been coupled to an ion microscope secondary ion mass spectrometry (SIMS) instrument to examine sputtering of silicon with an emphasis on possible application of C₆₀⁺ depth profiling for high depth resolution SIMS analysis of silicon semiconductor materials. Unexpectedly, C₆₀⁺ SIMS depth profiling of silicon was found to be complicated by the deposition of an amorphous carbon layer which buries the silicon substrate. Sputtering of the silicon was observed only at the highest accessible beam energies (14.5 keV impact) or by using oxygen backfilling. C₆₀⁺ SIMS depth profiling of As delta-doped test samples at 14.5 keV demonstrated a substantial (factor of 5) degradation in depth resolution compared to Cs⁺ SIMS depth profiling. This degradation is thought to result from the formation of an unusual platelet-like grain structure on the SIMS crater bottoms. Other unusual topographical features were also observed on silicon substrates after high primary ion dose C₆₀⁺ bombardment.     

Giant thermodynamical optical effect near ferroelastic phase transition point in Cs3Bi2I9 layered crystal

For the first time we have found a new giant thermodynamical optical effect near the ferroelastic phase transition point in Cs₃Bi₂I₉ layered crystal. The effect is appeared as periodical oscillations in time of the reflection coefficient. This phenomenon is caused by the small temperature deviations in thermodynamical system the appearance of which in the reflection spectra is strongly amplified in the ferroelastic phase transition point. The optical oscillations are explained on the base of a model that takes into account the temperature dependence of the refractive index through the order parameter (spontaneous strain) of the crystal.     

K3C60在200K附近的取向相变机理

研究了K₃C₆₀单晶薄膜在200K附近的导带结构.样品温度为190K时,同步辐射角分辨光电子谱能够观察到[111]方向有规律的能带色散.而在220K附近色散不存在.这一实验结果与K₃C₆₀在200K存在取向相变相符合.用反铁磁Ising模型对实验结果进行了分析.结果表明,K₃C₆₀在200K的相变是由低温下的一维无序取向结构转变为200K以上的双取向结构畴与无序分子(约占40 关键词： 3C₆₀')" href="#">K₃C₆₀ 取向相变机理     

Electronic properties of the organic semiconductor hetero-interface CuPc/C60

We present a study of the electronic properties of the interface between the well-established molecular organic semiconductor copper phthalocyanine (CuPc) and the fullerite C₆₀ using photoelectron spectroscopy and the Kelvin-probe (KP) method. Upon deposition of CuPc on C₆₀, we found interfacial shifts of the vacuum level indicating the formation of a dipole layer, while band bending is found to be negligible. The interface dipole of 0.5 eV measured with KP is close to the difference between the work functions of bulk CuPc and C₆₀. No evidence for a chemical interaction at the interface is concluded from the absence of additional features in the core-level spectra at the earliest stages of deposition. The energy-level alignment diagram at the CuPc/C₆₀ interface is derived.     

Conductivity behaviour of a cubic/tetragonal phase stabilized nanocrystalline La2O3-ZrO2

La₂O₃ doped nanocrystalline zirconia (ZrO₂) was prepared by chemical co-precipitation method for the 3, 5, 8, 10, 15, 20 and 30 mol.% concentrations of La₂O₃. Structural studies were performed using X-ray diffraction (XRD). All the as-synthesized samples were found to be in monoclinic phase. As-synthesized samples were given heat treatment at higher temperatures for tetragonal/cubic structural phase stabilization. Sintering the samples at temperature 1173 K stabilized the tetragonal and cubic phases. A slight shift in the 100% peak of the cubic phase was observed towards the low diffraction angle indicating the substitution of the bigger La³⁺ ion into the ZrO₂ lattice. Grain sizes were found to lie between 10 and 13 nm. Electrical conductivity studies were performed on the cubic phase stabilized La₂O₃-ZrO₂ by complex impedance spectroscopy. The conductivity increases up to the dopant concentration 10 mol.% and then decreases with further increase in La₂O₃ concentration. Initial increase in conductivity is correlated to the stabilization of the cubic phase and the subsequent decrease in the conductivity with the dopant content is interpreted on the basis of the oxygen-ion movement model. Electrical conductivity has contributions from grain and grain boundary regions. But the grain boundary conductivity is slightly higher than the corresponding grain conductivity. Higher grain boundary conductivity shows higher diffusion coefficient for the atoms on the surface of the ZrO₂ grains. The possible mechanism of the oxygen ion conduction in the La₂O₃ stabilized zirconia (LSZ) is reported. The Barton, Nakajima and Namikawa (BNN) relation has been applied to the conductivity data and found that the d.c. and a.c. conductions have been correlated to each other by the same mechanism.