应用于气体传感器的具有铝/金电极的单模式两端对声表面波谐振器

为改善气体传感器性能,通过器件优化设计获得了一种应用于气体传感器的具有低损耗、高品质因子(Q)的单模式两端对声表面波(SAW)谐振器。该谐振器由两个换能器、分置于换能器两边的短路栅反射器以及在换能器之间分布的用于敏感膜镀膜的约2.5mm金属薄层构成。谐振器采用铝/金双层电极以降低测试气体环境的腐蚀影响。利用经典耦合模(COM)理论对器件性能进行了仿真以提取优化的结构设计参数。基于仿真结果,实验研制了基于300MHz频率的新型铝/金电极SAW两端对谐振器,测试结果显示所研制器件具有较低损耗(〈7dB),较高Q值(-3000)以及单一谐振模式的特点,并且,以所研制的新型谐振器为频率控制单元的谐振器型振荡器表现出良好的频率稳定度(t15Hz/h),这对于改善气体传感器的检测下限及稳定性等性能指标具有重要意义。      

A novel matching network employing surface acoustic wave devices for W-CDMA power amplifiers

This paper describes a new approach of designing high Q surface acoustic wave (SAW) resonators as an inductive element in the matching network for W-CDMA power amplifiers (PAs). Spiral inductors based on CMOS/BiCMOS technologies presently possess relatively low Q (typically <10) and occupy a considerably large area. In order to break through the limitations of the spiral inductors, the authors attempt to apply higher Q and wideband SAW resonators employing Cu-grating/15 degrees YX-LiNbO(3)-substrate structure to the matching network for improved PA performance. An analysis was made on SAW resonators in detail, and an SAW resonator having a very small capacitance ratio of 3.28 and moderate Q of 147.8 was developed. After discussing the frequency dependence of the effective inductances, SAW resonators, which are used to be as inductive elements in the matching networks of PAs, were designed and fabricated. The PA including the matching circuit was simulated using the characteristics of the fabricated SAW resonators. The result showed that with better shape factor and good out-of-rejection, the SAW resonators definitely work as an inductive element and could replace widely used spiral inductors.     

谐振式检测器谐振腔对声表面波气相色谱仪灵敏度的影响

研究了谐振式检测器谐振腔对声表面波气相色谱仪灵敏度的影响。构建无液膜负载和有液膜负载下压电基片和金属指条结构的三维有限元模型,利用有限元方法提取不同周期结构的耦合模参量,结合P矩阵级联技术,推导出传感器灵敏度随检测器腔体结构改变的变化关系。实验制备了两种三换能器结构的声表面波谐振器,其输入换能器与输出换能器间距离分别为22.25倍波长和1.25倍波长,通过测试甲基膦酸二甲酯气体,验证理论计算结果。结果表明:缩短谐振器的谐振腔长度使器件中心处能量更为集中,有效地提高了声表面波气相色谱仪灵敏度。      

Effects of electrodes on performance figures of thin film bulk acoustic resonators

The effects of mechanical losses and elastic properties of the electrodes on the performance figures of a thin film bulk acoustic resonator (FBAR) are analyzed by numerical simulation. Results indicate that the material loss of the electrode has no visible effect on the characterization of the effective electromechanical coupling factor, k(eff)2. The acoustic impedance ratio of the electrode to the piezo-film dominantly determines the behaviors of the k(eff)2 variation with the electrode thickness. The resonance Q value, Q(s), of the FBAR closely relies on the material Q values of film and of electrodes as expected. Besides, the variation of Q(s) versus the thickness of the electrodes crucially depends on the acoustic impedance ratio as well. Especially, three characteristic parameters, i.e., the maximum value of k(eff)2, the sectional mass ratio of the electrode to the piezo film corresponding to the maximum k(eff)2, and the tolerance range of the ratio to keep k(eff)2 near the maximum, are calculated for some typical samples. These results would be useful for optimizing FBAR designs and performances.     

超小型声表面波谐振器

传统声表面波谐振器中的指条反射阵占据了器件的大部分尺寸。由于剪切横波(SH wave)在材料基片的自由端面反射时不产生模式转换,因此可望利用自由端面来代替SH型声表面波谐振器中的指条反射阵,实现超小型低损耗的新型声表面波谐振器。本文首先用COM理论对新结构的谐振器进行了讨论,并且在实验上实现了120MHz至440MHz的几个单端谐振器(ST36°石英基片),其插入损耗从0.87dB至1.29dB,面积缩小到传统谐振器的50％至25％。     

Sniffing lung cancer related biomarkers using an oxidized graphene SAW sensor

Decane is one of the volatile organic compounds (VOCs) in human breath. Successful detection of decane in human breath has vast prospects for early lung cancer diagnosis. In this paper, a novel detecting device based on a filter surface acoustic wave (SAW) gas sensor is presented. SAW sensors coated with a thin oxidized graphene film were used to detect decane in parts per million (ppm) concentrations. Control and signal detection circuits were designed using a vector network analyzer with a detection resolution of insertion loss down to 0.0001 dB. The results showed that the SAW sensor could respond quickly with great sensitivity when exposed to 0.2 ppm decane. This device shows tremendous potential in medical diagnosis and environmental assessment.     

ZnO-based film bulk acoustic resonator devices on a specially designed Bragg reflector

In this paper, we studied ZnO-based film bulk acoustic resonator (FBAR) device fabricated on a specially designed multilayered Bragg reflector part. Very thin chromium adhesion layers (0.03 μm thick) were additionally deposited to improve the quality of the Bragg reflector and some thermal treatments were performed to improve the resonant characteristics of the FBAR device. At the operating frequency of ∼2.7 GHz, excellent resonant characteristics were observed in terms of return loss and quality factor, and effective electromechanical coupling coefficient.     

Nonlinear frequency shift in surface acoustic wave resonator operating as a gas sensor

The shift in the resonance frequency of a two-port quartz surface acoustic wave (SAW) resonator operating as a gas sensor without a selective layer is studied versus the power of an SAW excited in the resonator. At working frequencies of the resonator (≈389 MHz) placed in the flow of moisture-containing nitrogen gas, an anomalously large positive shift of the resonance frequency is observed as the SAW power exceeds 1 mW. This shift is one order of magnitude larger than that due to the nonlinear amplitude-frequency effect, which is known for quartz SAW resonators. Possible physical mechanisms underlying this phenomenon are analyzed. Experimental data indicate that such a shift is associated with the influence of a powerful SAW on sorption processes taking place on the active surface of the resonator rather than being a direct consequence of heating of the SAW substrate by the powerful SAW.     

基于ZnO薄膜的高次谐波体声波谐振器的研究

基于ZnO作压电层和蓝宝石作基底的高次谐波体声波谐振器(HBAR),采用不同电极材料和溅射方法进行优化。优化选定镀铬-金/氧化锌/铬-金/蓝宝石结构。对制备的器件进行了测试分析,结果显示,具有多模谐振特性的HBAR器件在2.87GHz Q值达到43000。根据一维Mason等效电路模型,HBAR器件还进行了理论仿真,结果表明理论结果与实测值基本一致。     

Fabrication of piezoelectric AlN thin film for FBARs

This paper focuses on the fabrication of film bulk acoustic-wave resonator (FBAR) comprising an aluminum nitride (AlN) piezoelectric thin film sandwiched between two metal electrodes and located on a silicon substrate with a low-stress silicon nitride (Si₃N₄) support membrane for high frequency wireless applications, and analyzes the optimization of the thin AlN film deposition parameters on Mo electrodes using the reactive RF magnetron sputter system. Several critical parameters of the sputtering process such as RF power and Ar/N₂ flow rate ratio were studied to clarify their effects on different electrodes characteristics of the AlN films. The experiment indicated that the process for Mo electrode was easier compared with that of the Pt/Ti or Au/Cr bi-layer electrode as it entailed only one photo resist and metal deposition step. Besides, Pt/Ti or Au/Cr electrodes reduced the resonance frequency due to their high mass density and low bulk acoustic velocity. Compared with the case of the Al bottom electrode, there is no evident amorphous layer between the Mo bottom electrode and the deposited AlN film. The characteristics of the FBAR devices depend not only upon the thickness and quality of the AlN film, but also upon the thickness of the top electrode and the materials used. The results indicate that decreasing the thickness of either the AlN film or the top electrode increases the resonance frequency. This suggests the potential of tuning the performance of the FBAR device by carefully controlling AlN film thickness. Besides, increasing either the thickness of the AlN film or higher RF power has improved a stronger c-axis orientation and tended to promote a narrower rocking curve full-width at half-maximum (FWHM), but increased both the grain size and the surface roughness. An FBAR device fabricated under optimal AlN deposition parameters has demonstrated the effective electromechanical coupling coefficient (k _eff²) and the quality factor (Q _{f x} ) are about 1.5% and 332, respectively.     

Characteristics of SAW UV sensors based on a ZnO/Si structure using third harmonic mode

This paper describes the characteristics of surface acoustic wave (SAW) ultraviolet (UV) sensors fabricated from a ZnO thin film using the third harmonic mode. A ZnO thin film was used as an active layer for UV detection, and a piezoelectric layer was sputtered using magnetron sputtering. The X-ray diffraction (XRD) and photoluminescence (PL) spectra showed that the ZnO sputtered onto Si(100) was highly (002)-oriented and had good optical properties. The two-port SAW resonator was based on an inter-digital transducer (IDT)/ZnO/Si structure and was fabricated and exposed under UV light at a wavelength of 380 nm. As a result, under a UV intensity of 3 mW/cm², the SAW UV sensor was greatly shifted by 400 kHz at the third harmonic mode compared to a frequency shift of 10 kHz in the fundamental mode.     

Design, simulation and structural optimization of a longitudinal acoustic resonator for trace gas detection using laser photoacoustic spectroscopy (LPAS)

The design of the acoustic resonator is critical for the optimization of the sensitivity of laser photoacoustic spectroscopy (LPAS) in trace gas detection applications. In this paper, an LC circuit model is used for the simulation of a 1D acoustic resonator. This acoustic resonator is designed for CO photoacoustic spectroscopy. The effects of the structural parameters, quality factor and resonant frequency on the performance of the device are theoretically analyzed. The role of the buffer volume as an acoustic filter is investigated and optimized dimensions of the buffer volume, to achieve minimum noise transmission coefficient, are calculated. The effects of the ambient temperature, variety of pressure and gas flow velocity on the resonant frequency of photoacoustic resonator and PA signal are simulated. The temperature dependence of the microphone sensitivity is also introduced.     

Helmholtz resonator lined with absorbing material

A closed-form, two-dimensional analytical solution is developed to investigate the acoustic performance of a concentric circular Helmholtz resonator lined with fibrous material. The effect of density and the thickness of the fibrous material in the cavity is examined on the resonance frequency and the transmission loss. With the expressions for the eigenvalue and eigenfunction in the cavity, the transmission loss is obtained for a piston-driven model by applying a pressure/velocity matching technique. The results from the analytical methods are compared to the numerical predictions from a three-dimensional boundary element method and the experimental data obtained from an impedance tube setup. It is shown that the acoustic performance of a Helmholtz resonator may be modified considerably by the density and thickness of the fibrous material without changing the cavity dimensions.     

CDMA移动通信用高温超导滤波器的研制

本文提出了一种新型H型环带谐振器,具有结构紧凑,尺寸小,Q值高,非相邻耦合弱等优点.该谐振器在一侧设置了一个开口,改变开口位置,可以在较大范围内改变谐振器谐振频率,并且能够改变基频和二倍谐频之间的频率间隔.对于直连型馈线引入方式,H型环带谐振器容易实现外部Q值的匹配,同时对输入/输出端谐振器的谐振频率影响很小.本文还基于H型环带谐振器,采用2英寸双面YBCO高温超导薄膜设计并制作了用于CDMA移动通信系统的12节高温超导滤波器.该滤波器的中心频率为832MHz,相对带宽为1.6%.在70K温度下的测试结果显示滤波器的带内插入损耗低于0.28dB,反射损耗优于-15.5dB,带外抑制约为75dB,通带低频端带边陡峭度超过30dB/MHz,高频端带边陡峭度超过20dB/MHz.     

高次谐波体声波谐振器的机械品质因数

机械品质因数Q_M是高次谐波体声波谐振器(High-overtone Bulk Acoustic Resonator,HBAR)一个关键的特性参数。首次较系统地研究了Q_M随构成HBAR的3个组成部分(基底、压电薄膜和电极)的结构参数(厚度)和性能参数(特性阻抗与机械衰减因子)的变化规律。在谐振频率附近,将HBAR的分布参数等效电路简化为集总参数等效电路,首次用解析表达式给出它们的变化规律,分析了Q_M在给定频率最近谐振点的变化情况。结果表明,固定压电层厚度,Q_M随基底厚度的连续增加略呈振荡(非单调)上升,当基底厚度很大时趋于基底材料的机械品质因数;固定基底厚度,Q_M随压电层厚度的连续增加呈波浪式下降;选择低损耗的蓝宝石或YAG作为基底可以获得较大的Q_M值;电极的损耗必须考虑,它会降低Q_M值;与Au电极相比,具有较低损耗的A1电极选择适当厚度可以获得较高的Q_M值;此外,Q_M随频率的增加呈下降趋势。上述的结果为HBAR的优化设计提供了相应的理论依据。根据我们对K_eff2的研究,Q_M与K_eff2的变化规律往往是相悖的,因此在设计HBAR时要在这两者作适当的权衡。      

压电基片与金属点阵厚度对行波模式声表面波陀螺仪检测灵敏度的影响

过低的灵敏度性能一直是声表面波(SAW)陀螺仪的瓶颈问题,对此,提出了一种结合金属点阵用以改善陀螺效应的新型行波模式SAW陀螺仪,并对其性能进行了评价。该结构由双延迟线型振荡器构成,两延迟线平行且反向制作于同一压电基片上,在延迟线的声传播路径上分布铜点阵。结合层状介质中声波传输特性的研究方法分析了两种压电晶体材料、不同金属点阵膜厚对传感器响应的影响,从而为确定陀螺仪的设计奠定理论基础。基于理论计算结果,研制了以128°YX LiNbO3及X-112°Y LiTaO₃为压电基片,铜点阵厚度分别为33000 Å,6000 Å,9000 Å的95 MHz声表面波陀螺仪。为改善振荡器的频率稳定性,延迟线采用了具有梳状结构的单相单向换能器结构。振荡器的测试频率稳定度达到了±5 Hz/h。利用精确速率转台对所研制的SAW陀螺仪性能进行了测试。测试结果表明:采用机电耦合系数较高的128°YX LiNbO₃基片并增加金属点阵厚度均能有效提高陀螺仪的检测灵敏度,所获得的最大检测灵敏度为2.7 Hz/(deg/s)。      

Material and device properties of ZnO-based film bulk acoustic resonator for mass sensing applications

Zinc oxide based film bulk acoustic resonator as mass sensor was fabricated by multi-target magnetron sputtering under optimized deposition condition. Each layer of the device was well crystallized and highly textural observed by transmission electron microscopy and X-ray diffraction measurement. Through piezoelectric test, the device vibrated with significant distance. The influence of top electrode on resonant frequency and the bio-specimen of mass loading effect were investigated. Data show that the device has qualified properties as mass biosensor, with a resonant frequency of 3-4 GHz and a high sensitivity of 8-10 kHz cm²/ng.     

MOCVD法生长SAWF用ZnO/Diamond/Si多层结构

使用等离子体辅助MOCVD系统在金刚石,硅衬底上成功地制备了氧化锌多层薄膜材料,通过两步生长法对薄膜质量进行了优化。XRD测试显示优化后的样品具有c轴的择优取向生长,PL谱测试表明样品经优化后不仅深能级发射峰消失,同时紫外发射峰增强。对优化后的样品的表面测试显示出较低的表面粗糙度。比较氧化锌多层薄膜结构的声表面波频散曲线,ZnO薄膜声表面滤波器受膜厚和衬底材料的影响较大。当ZnO薄膜较薄时,在它上面的传播速度将与衬底上的传播速度接近,与其他衬底上生长的薄膜相比,以金刚石这种快声速材料为衬底的ZnO多层薄膜结构,声表面波滤波器的中心频率将提高1倍左右。     

Experimental results of a high Q quasioptical reflection cavity

A quasi-optical reflection cavity intended to be used as the resonant load of a submillimeter wavelength oscillator has been designed, constructed, and tested. The resonator consists of three elements in cascade: a high Q, high finesse folded Fabry-Perot resonator, a lower Q, low finesse Fabry-Perot resonator, and a Littrow mounted diffraction grating. The resonator exhibits a Q of 6600 and 2.5 dB of loss at 63 GHz. The design can be scaled to 1 THz, where waveguide structures become impractical, to serve as the resonator for high frequency quantum well resonant tunneling device oscillators.