双量子点电荷比特的散粒噪声谱

考虑基底声子热库的耗散效应,推导了双量子点电荷比特的主方程,并利用全计数统计方法计算了双量子点电荷比特的平均电流和Fano因子.结果表明:声子热库的耗散引起平均电流关于其峰值的非对称分布和Fano因子双峰的非对称分布,并且随着声子热库温度T的升高,平均电流的非对称分布越强,Fano因子的峰值逐渐降低,直至超泊松分布行为消失.     

耗散环境单量子点体系输运过程的量子速度极限研究

基于量子点输运理论与B ures角度量的方法,研究了耗散环境下单量子点系统输运过程中的量子速度极限特性.结果表明:由于隧穿过程存在库仑阻塞效应与量子相干效应,系统可加速能力随左侧隧穿概率有微小的变化;然而,系统可加速能力随右侧隧穿概率变化明显,归因于动力学通道阻塞与共隧穿的共同效应.能级差的增大使系统向目标态演化需要更长的时间,从而改变系统的加速潜力以及随时间演化的震荡频率.耗散环境中弛豫速率对系统可加速能力的影响不是单调的,存在一个有趣的转折点,当弛豫速率小于该点时,系统的可加速能力产生震荡变化,当弛豫速率大于该点时,加速潜力的变化受到了弛豫速率的单调抑制,弛豫速率的增大总体上抑制了系统的可加速能力.     

量子点接触对单电子量子态的量子测量

研究了用介观量子点接触(QPC)对单电子两态和多态系统的量子测量问题.发现,在任意测量电压下,该测量问题不能用标准的Lindblad量子主方程描述.考虑了测量仪器和被测系统之间的能量交换对细致平衡关系的影响,对该问题提供了一个恰当的理论描述,并对未来的固态量子测量和量子反馈控制可能产生一定影响. 关键词： 量子测量 量子比特 细致平衡 退局域化     

声子库的量子态对介观电路量子特性影响的研究

考虑电子与声子间相互作用,研究了两种声子库纯初始态(正则系综与粒子数态)下耗散介观电路的动力学特性.长时间极限下(t→∞)：当环境处于热平衡态时,电路系统中的电流和电荷的平均值只与电路所处初始量子态中的平均值有关,与环境无关;环境初态为粒子数态时,电荷与电流平均值随时间的演化特性与环境初始处于热平衡态下时完全一样,表明介观电路中的电荷与电流的平均值与环境量子态的某组占有数无关.电路中电流和电荷的量子涨落不仅与系统的初态有关,还与系统所处环境的量子态及温度有关.一般地说,电路系统与环境的纠缠会 关键词： 介观耗散电路 声子库 量子初态 量子态纯度     

非对称自旋-轨道耦合系统的多体量子相干含时演化

本文以具有非对称性自旋相互作用的三体自旋系统为研究对象,重点研究了三体量子相干含时演化规律.采用精确量子对角化和基于量子主方程的数值模拟方法,讨论了三体量子系统中多种量子相干组分及其退相干.研究发现,量子相干组分的含时演化与整个系统的初态量子特性紧密相关.当初态为可分离纯态时,在较短时间内,非对称相互作用有利于增加多体量子相干度.这些量子相干度因受噪声影响而逐渐衰减.当初态为类Werner态时,量子相干度的分布满足加和性,即三体量子相干度等于所有两体量子相干度之和.自旋之间非对称相互作用和环境噪声都会引起三体量子相干度大于所有两体量子相干度之和.这些结论有助于多体量子资源的制备.     

非对称量子阱中非线性光学吸收系数的计算

非对称量子阱中的非线性光学效应因其潜在的实用价值而引起人们的广泛关注,而量子阱内带间的光学吸收问题对研究远红外光学探测器件具有重要的理论指导意义.以Pschl-Teller势阱为例研究了影响非对称量子阱中的非线性光学吸收系数的因素.考虑到带间的电子弛豫,用量子力学中的密度矩阵算符理论导出了Pschl-Teller势阱中的线性与三阶非线性光学吸收系数的表达式.因该势阱中有两个可调参数,通过调节系统的参数,发现该系统的非线性光学吸收系数呈规律性的变化.以典型的GaAs/AlGaAs非对称量子阱为例作了数值计算,通过调节系统的参数,数值计算结果表明,入射光强以及系统的非对称性对量子阱的非线性光学吸收系数有较大的影响,从而为实验上研究非对称量子阱的非线性光学效应提供了必要的理论依据.     

声子库的量子态对介观电路量子特性影响的研究

考虑电子与声子间相互作用，研究了两种声子库纯初始态(正则系综与粒子数态)下耗散介观电路的动力学特性.长时间极限下(t→∞)：当环境处于热平衡态时，电路系统中的电流和电荷的平均值只与电路所处初始量子态中的平均值有关，与环境无关；环境初态为粒子数态时，电荷与电流平均值随时间的演化特性与环境初始处于热平衡态下时完全一样，表明介观电路中的电荷与电流的平均值与环境量子态的某组占有数无关.电路中电流和电荷的量子涨落不仅与系统的初态有关，还与系统所处环境的量子态及温度有关.一般地说，电路系统与环境的纠缠会     

量子阱吸收谱中的Fano效应

提出在一定的量子阱结构及掺杂浓度下,由于LO声子激发态与电子准连续扩展态的相互耦合,可导致子带跃迁吸收谱的不对称性(亦即Fano线形).推导出此Fano线形的不对称参量的解析表达式,并以GaAg/Al_3Ga_(1-x)As为例,给出几种掺杂浓度和阱结构下的Fano.线形. 关键词：     

量子环中量子比特的声子效应

在量子环中电子与体纵光学声子强耦合的情况下,通过求解能量本征方程,得出了电子的基态和第一激发态的本征能量及其波函数,进而以电子-声子系的基态与第一激发态构造了一个量子比特.数值计算结果表明量子比特内电子的空间概率密度分布随时间和空间角坐标作周期性振荡,且振荡周期随耦合强度的增大而减小,说明声子将导致量子比特相干性降低;还表明振荡周期随量子环内径（或外径）的增大而增大,因此适当改变量子环的尺度,可以提高量子比特的相干性. 关键词： 量子环 量子信息 量子比特     

量子阱中电子-LO声子相互作用引起共振喇曼散射的不对称线形

提出在量子阱中,由于连续态电子与LO声子相互作用,通过对量子阱进行某种设计,并以特定的激光频率入射,可以导致Raman谱中很强的Fano现象.以GaAs-Al_2Ga_(1-x)As为例计算了几种量子阱结构下的不对称参量q,并给出了相应的Fano线形 关键词：     

Geometric phase of an open double-quantum-dot system detected by a quantum point contact

We study theoretically the geometric phase of a double-quantum-dot(DQD) system measured by a quantum point contact(QPC) in the pure dephasing and dissipative environments, respectively. The results show that in these two environments, the coupling strength between the quantum dots has an enhanced impact on the geometric phase during a quasiperiod. This is due to the fact that the expansion of the width of the tunneling channel connecting the two quantum dots accelerates the oscillations of the electron between the quantum dots and makes the length of the evolution path longer.In addition, there is a notable near-zero region in the geometric phase because the stronger coupling between the system and the QPC freezes the electron in one quantum dot and the solid angle enclosed by the evolution path is approximately zero,which is associated with the quantum Zeno effect. For the pure dephasing environment, the geometric phase is suppressed as the dephasing rate increases which is caused only by the phase damping of the system. In the dissipative environment,the geometric phase is reduced with the increase of the relaxation rate which results from both the energy dissipation and phase damping of the system. Our results are helpful for using the geometric phase to construct the fault-tolerant quantum devices based on quantum dot systems in quantum information.     

Quantum speed limit of the double quantum dot in pure dephasing environment under measurement

The quantum speed limit (QSL) of the double quantum dot (DQD) system has been theoretically investigated by adopting the detection of the quantum point contact (QPC) in the pure dephasing environment. The Mandelstam-Tamm (MT) type of the QSL bound which is based on the trace distance has been extended to the DQD system for calculating the shortest evolving time. The increase of decoherence rate can weaken the capacity for potential speedup (CPS) and delay the evolving process due to the frequently measurement localizing the electron in the DQD system. The system needs longer time to evolve to the target state as the enhancement of dephasing rate, because the strong interaction between pure dephasing environment and the DQD system could vary the oscillation of the electron. Increasing the dephasing rate can sharp the QSL bound, but the decoherence rate would weaken the former effect and vice versa. Moreover, the CPS would be raised by increasing the energy displacement, while the enhancement of the coupling strength between two quantum dots can diminish it. It is interesting that there has an inflection point, when the coupling strength is less than the value of the point, the increasing effect of the CPS from the energy displacement is dominant, otherwise the decreasing tendency of the CPS is determined by the coupling strength and suppress the action of the energy displacement if the coupling strength is greater than the point. Our results provide theoretical reference for studying the QSL time in a semiconductor device affected by numerous factors.     

Charge noise acting on graphene double quantum dots in circuit quantum electrodynamics architecture

We investigate the dephasing mechanisms induced by the charge noise and microwave heating effect acting on a graphene double quantum dot(DQD) capacitively coupled to a microwave resonator. The charge noise is obtained from DC transport current, and its contribution to dephasing is simultaneously determined by the amplitude response of the microwave resonator. A lowfrequency 1/f-type noise is demonstrated to be the dominant factor of the dephasing of graphene DQD. Furthermore, when the applied microwave power is larger than-90 d Bm, the dephasing rate of graphene DQD increases rapidly with the increase of microwave power, and fluctuates slightly with the applied microwave power smaller than-90 d Bm. Our results can be applied to suppress the impeditive influence on the dephasing of graphene-based devices associated with microwave input in the perspective investigations.     

Full counting statistics of renormalized dynamics in open quantum transport system

The internal dynamics of a double quantum dot system is renormalized due to coupling respectively with transport electrodes and a dissipative heat bath. Their essential differences are identified unambiguously in the context of full counting statistics. The electrode coupling caused level detuning renormalization gives rise to a fast-to-slow transport mechanism, which is not resolved at all in the average current, but revealed uniquely by pronounced super-Poissonian shot noise and skewness. The heat bath coupling introduces an interdot coupling renormalization, which results in asymmetric Fano factor and an intriguing change of line shape in the skewness.     

Fano resonances as a probe of phase coherence in quantum dots

In the presence of direct trajectories connecting source and drain contacts, the conductance of a quantum dot may exhibit resonances of the Fano type. Since Fano resonances result from the interference of two transmission pathways, their line shape (as described by the Fano parameter q) is sensitive to dephasing in the quantum dot. We show that under certain circumstances the dephasing time can be extracted from a measurement of q for a single resonance. We also show that q fluctuates from level to level, and we calculate its probability distribution for a chaotic quantum dot. Our results are relevant to recent experiments by G?res et al. [Phys. Rev. B 62, 2188 (2000)].     

Shot noise of the spin inelastic tunneling through a quantum dot with single molecule-magnet

We have studied the quantum fluctuations of inelastic spin-electron scattering in quantum dot with an embedded biaxial single molecule-magnet and particularly investigated the zero-frequency shot noise and Fano factor in different magnetic fields. It is found that the shot noise and Fano factor exhibit a stepwise behaviour as bias increases in the presence of interaction between the electron and molecule-magnet for a weak magnetic field. As magnetic field becomes strong, a dip is displayed in the shot-noise-bias curve due to the suppression of inelastic shot noise caused by the quantum tunneling of magnetisation. Because of the spontaneous inelastic tunneling at zero bias, a small shot noise occurs, which results in the case of Fano factor F >> 1. Moreover, our results show that the sweeping speed can also influence the shot noise and Fano factor obviously.     

LA声子对激子qubit纯退相干的影响

在一个抛物量子点中,以激子的真空态和基态作为量子比特(qubit),采用求密度矩阵元的方法,计算了由形变势下声学声子引发的激子量子比特纯退相干.找到了激子量子比特纯退相干因子对时间、温度和量子点受限长度的依赖关系.研究发现,激子量子比特的退相干因子在2.5ps的时间范围内随时间的增加而迅速增加,其纯退相干时间在ps量级;在温度即使为绝对温度0K时由LA声子引发的退相干依然存在,在温度大于3K后退相干因子随温度的增大而开始迅速增大;并同时发现量子点受限长度对退相干因子有重要影响,激子越受限退相干越快.研究结果表明,对激子量子比特使用适当大小量子点,且保持环境低温,并采用低能超快光学操作可以有效地抑制声子对激子量子比特纯退相干的影响. 关键词： 量子点 量子信息 量子比特     

Fano effect of a parallel-coupled triple Rashba quantum dot system

Using the nonequilibrium Keldysh Green's function technique, the Fano effect of a parallel-coupled triple Rashba quantum dot system is investigated. The conductance as a function of electron energy is numerically calculated. Compared with the case of a parallel-coupled double quantum dot system, two additional Fano resonance peaks occur in the conductance spectrum. By adjusting the structural parameters, the two Fano resonance peaks may change into the resonance peaks. In addition, the influence of Rashba spin-orbit interaction on the conductance is studied.