磁性金属多层膜中的巨磁电阻效应

在许多磁性金属多层膜系统中都存在巨磁电阻效应，这些系统是由厚度为几个纳米的磁层与非磁层交替重叠构成，出现巨磁电阻效应的必要条件是系统的磁化状态能被外加磁场所改变。该效应的物理是传导电子在界面处或磁层内的所谓自旋相关散射，层间耦合随隔离层厚度变化而振荡的现象，在隔离层为非磁过渡金属和贵金属的系统中普遍存在，自旋阀多层结构在信息存储技术中磁电阻“读出”头方面极具应用前景。     

磁电子学讲座第三讲 磁性金属多层膜中的巨磁电阻效应

在许多磁性金属多层膜系统中都存在巨磁电阻效应，这些系统是由厚度为几个纳米的磁层与非磁层交替重叠而构成．出现巨磁电阻效应的必要条件是系统的磁化状态能被外加磁场所改变．该效应的物理原因是传导电子在界面处或磁层内的所谓自旋相关散射．层间耦合随隔离层厚度变化而振荡的现象，在隔离层为非磁过渡金属和贵金属的系统中普遍存在．自旋阀多层结构在信息存储技术中磁电阻“读出”头方面极具应用前景．     

第五讲 自旋极化输运及隧道巨磁电阻效应

简要回顾了利用量子隧道效应测定铁磁金属传导电子自旋极化率的研究历史，综述了自旋极化电子隧穿产应导致的“铁磁金属／非磁绝缘体／铁磁金属”三层平面型隧道结中的巨磁电阻效应以及“铁磁金属／非磁绝缘体”颗粒膜系统中的隧穿类型巨磁电阻效应的研究进展。     

磁电子学讲座 第五讲 自旋极化输运及隧道巨磁电阻效应

简要回顾了利用量子隧道效应测定铁磁金属传导电子自旋极化率的研究历史．综述了自旋极化电子隧穿效应导致的“铁磁金属／非磁绝缘体／铁磁金属”三层平面型隧道结（简称ＦＭ／Ｉ／ＦＭ隧道结）中的巨磁电阻效应以及“铁磁金属／非磁绝缘体”颗粒膜系统中的隧穿类型巨磁电阻效应的研究进展．     

[Fe/Cr]多层膜及掺入Si中介层后的层间耦合和磁电阻效应

用真空蒸镀方法制备了［Ｆｅ／Ｃｒ］，［Ｆｅ／Ｃｒ／Ｓｉ］和［Ｆｅ／Ｓｉ］多层膜．研究了Ｃｒ层、Ｓｉ层和Ｃｒ＋Ｓｉ层厚度变化对层间耦合和磁电阻的影响．Ｆｅ层厚为２ｎｍ，Ｃｒ层厚度变化存在耦合振荡和巨磁电阻及其振荡．磁电阻值为１４.６％（４.２Ｋ）．在Ｃｒ层中加入一半Ｓｉ层或全部由Ｓｉ层替代，振荡消失，磁电阻减小到千分之几．根据掺Ｓｉ层后多层膜的电阻率变化，认为Ｓｉ加入使非磁层中自由电子数减少，随之极化效应也变弱，导致振荡消失，磁电阻大为降低 关键词：     

磁性多层薄膜系统中的巨磁电阻效应

考虑到量子尺寸效应以及来自杂质、粗糙表面、粗糙界面三方面的散射,运用量子统计格林函数方法和久保理论,计算了磁性多层薄膜系统中的巨磁电阻,讨论了巨磁电阻随非磁层厚度作周期性振荡,以及在(Fe/Cr)_N/Fe系统中巨磁电阻随多层基元数目N增加而增大等现象.理论计算与实验结果符合.此外,还讨论了有关各种散射引起的散射率能否相加的问题. 关键词：     

Co/Cu多层膜反铁磁第一、第二峰耦合结构的磁电阻与结构研究

确定了Co/Cu多层膜的第一和第二反铁磁耦合对应的非磁层(Cu)的厚度,对相同厚度铁磁层(Co)制备了第一与第二反铁磁耦合的Co/Cu多层膜,利用同步辐射掠入射X射线散射(衍射)技术研究了耦合多层膜的界面结构,探索了耦合多层膜中磁电阻增强的可能原因.     

金属磁性多层膜的新颖特性──巨磁电阻效应

磁性和非磁性层交替重构成的金属磁性多层膜常具有巨磁电阻效应，其中每层膜约几个纳米厚。出现巨磁电阻效应的基本条件是：在外磁场下相邻磁层磁化强度取向发生对变化。巨磁电阻效应的物理起源是，其自旋与局域磁化强度平行和反平行的电子受到的散射不同，散射的不同既要嗵来自获射中收的特性，又可能源于两种自旋电子的能态密度的差异。由于信息存储技术中磁电阻“读出”磁头有巨大的应用前景，巨磁电阻效应引起了人们的极大兴趣。     

磁电子学讲座 第四讲 纳米微粒系统中的巨磁电阻效应

重点介绍含有铁磁纳米微颗粒系统中的巨磁电阻效应，例如颗粒膜、快淬纳米复相固体等巨磁电阻效应与铁磁组成、颗粒尺寸、形状的依赖性．     

自旋输运和巨磁电阻--自旋电子学的物理基础之一

介绍磁性纳米结构和锰氧化物中电子的自旋极化输运和巨磁电阻效应，它们是新近发展的自旋电子学的物理基础之一．着重讨论的是以下三方面的基本物理图像：磁多层结构的巨磁电阻，铁磁隧道结的隧穿磁电阻，掺杂锰氧化物的庞磁电阻效应．     

The effect of the ferromagnetic metal layer on tunnelling conductance and magnetoresistance in double magnetic planar junctions

Based on the free-electron approximation,we investigate the effect of the ferromagnetic metal layer on the tunnelling magnetoresistance(TMR) and tunnelling conductance(TC)in the double magnetic tunnel junctions(DMTJs) of the structure NM/FM/I(S)/NM/I(S)/FM/NM,where FM,NM and I(S) represent the ferromagnetic metal,nonmagetic metal and insulator(Semiconductor),respectively,The FM,I(S)and inner NM layers are of finite thickness,while the thickness of the outer NM layer is infinite.The calculated results show that,due to the spin-dependent interfacial potential barriers caused by electronic band mismatch between the various magnetic and nonmagnetic layers,the dependences of the TMR and TC on the thicknesses of the FM layers exhibit oscillations,and a much higher TMR can be obtained for suitable thicknesses of FM layers.     

Giant magnetoresistance effect in hybrid ferromagnetic-Schottky-metal and semiconductor nanosystem

We report on a theoretical investigation of the giant magnetoresistance (GMR) effect in hybrid ferromagnetic-Schottky-metal and semiconductor nanosystem. Experimentally, this GMR device can be realized by the deposition of two ferromagnetic (FM) stripes and one Schottky normal metal (NM) in parallel way on the top of a semiconductor GaAs heterostructure. The GMR effect emanates from the significant transmission difference for electrons tunneling through parallel and antiparallel magnetization configurations of the device, and its magnetoresistance ratio (MR) can reach the order of ¹⁰⁶%. Furthermore, it is also shown that the MR of the device depends strongly on the relative location of the Schottky NM stripe between two FM stripes.     

NM/FI/NI/FI/NM新型双自旋过滤隧道结的隧穿电导和隧穿磁电阻

在NM/FI/FI/NM型双自旋过滤隧道结(此处NM为非磁金属层，FI为铁磁绝缘体或半导体层)的基础上，我们提出一种NM/FI/NI/FI/NM新型双自旋过滤隧道结(此处NI表示非磁绝缘体或半导体层). 插入NI层的目的是为了避免原双自旋过滤隧道结中相邻FI层界面处磁的耦合作用所导致的对隧穿磁电阻的不利影响. 在自由电子近似的基础上，利用转移矩阵方法，对NM/FI/NI/FI/NM新型双自旋过滤隧道结的隧穿电导、隧穿磁电阻与FI层及NI层厚度的变化关系以及随偏压的变化关系进行了理论研究.计算结果表明，在NM/FI/NI/FI/NM新型双自旋过滤隧道结中仍可以得到很大的TMR值. 关键词： 双自旋过滤隧道结 隧穿磁电阻 非磁绝缘(半导)体间隔层     

Perpendicular giant magnetoresistance in magnetic multilayered nanowires

We present giant magnetoresistance (GMR) measurements performed on electrodeposited Co/Cu multilayered nanowires. The variation of the GMR with the thicknesses of the Cu and Co layers over wide ranges is discussed in the framework of the Valet-Fert model for perpendicular GMR. The interface and bulk spin-dependent scattering parameters as well as the spin diffusion lengths in the nonmagnetic and ferromagnetic layers are extracted from this analysis.     

First-principles calculations of magnetic and electronic structures around surfaces and interfaces of magnetic multi-layered structure

Electronic and magnetic structures of ferromagnetic (FM)/non-magnetic (NM) and FM/antiferromagnetic (AF) bi-layer systems are calculated by the first principles approach. For the FM/NM system, we focus on the Co/Cu multi-layered structure whose interfacial layer is assumed to have a mixed composition of Co and Cu atoms, and show a possibility that Co atoms at the interface play a significant role as the spin-dependent scattering potentials. In the FM/AF system, we consider Fe or Co monolayer as FM layer and MnNi as AF layers. It is predicted that the Mn moments adjacent to FM layer are forced to align the FM moments, and those of under layer go gradually to anti-parallel alignment as in the bulk MnNi.     

Tunneling magnetoresistance of the double spin-filter junctions at nonzero bias

A recent theoretical estimation indicated that the NM/FI/FI/NM double spin-filter junction (DSFJ, here the NM and FI represent the nonmagnetic electrode and the ferromagnetic insulator (semiconductor) spacer, respectively) could have very high tunneling magnetoresistance (TMR) at zero bias. To meet the requirement in research and application of the magnetoresistance devices, we have calculated the dependences of tunneling magnetoresistance of DSFJ on the bias (voltage), the thicknesses of ferromagnetic insulators (semiconductors) and the average barrier height. Our results show that except its very high value, the TMR of DSFJ does not decrease monotonously and rapidly with rising bias, but increase slowly at first and decrease then after having reached a maximum value. This feature is in distinct contrast to the ordinary magnetic tunnel junction FM/NI/FM (FM and NI denote the ferromagnetic electrode and the nonmagnetic insulator (semiconductor) spacer, respectively), and is of benefit to the use of DSFJ as a magnetoresistance device.     

Universal relationship between giant magnetoresistance and anisotropic magnetoresistance in spin valve multilayers

We measure the giant magnetoresistance (GMR) with the current both parallel and perpendicular to the direction of the magnetization in the ferromagnetic (FM) layers and thus probe the anisotropy of the effective mean free paths for the spin-up and spin-down electrons, seen in the anisotropic magnetoresistance. We find that the difference of the GMR in the two configurations, when expressed in terms of the sheet conductance, displays a nearly universal behavior as a function of GMR. On interpreting the results within the Boltzmann transport formalism we demonstrate the importance of bulk scattering for GMR.     

Electrodeposition and characterization of Cu/Co multilayers: Effect of individual Co and Cu layers on GMR magnitude and behavior

The present work discusses the successful electrodeposition of Cu/Co multilayers, exhibiting appreciable GMR of 12-14% at room temperature. The effect of individual Cu and Co layers on the magnitude and behavior of GMR has been studied. By varying the thickness of individual layers the field at which saturation in GMR is observed can be controlled. It was observed that for lower thicknesses of Co layer, the saturation fields are reduced below 1 kOe. The Cu layer thickness seems to control the nature of magnetic coupling and the saturation field, with the two showing a correlation.     

Giant magnetoimpedance in FM/SiO2/Cu/SiO2/FM films at GHz frequencies

We study the magnetic properties at high frequency of new structures of the tri-layer samples. The magnetoimpedance effect was analyzed in FM/i/Cu/i/FM sandwiched layers, where the ferromagnetic layer (FM) is, in fact, a multilayered film [F (10 nm)+Cu (1 nm)]×50 and F is the amorphous ferromagnetic alloy Fe_73.5Cu₁Nb₃Si_13.5B₉ and i is an isolating layer produced by magnetron sputtering. The effect of, both, the probe current frequency (in the range 10 MHz–1.8 GHz) and the dimensions of the magnetic and non-magnetic layers of the MI response were investigated. A comparison between samples with and without the isolating layer is discussed. MI ratios of 220% were obtained for samples at 180 MHz with a ferromagnetic and Cu width layers of 2 and 1 mm, respectively.