HD74LS00P集成与非门的线性放大性能研究

依据电压传输特性曲线，分析了HD74LS00P集成与非门的线性放大性能，并对由HD74LS00P集成与非门组成的2种线性放大器进行了实验测试．     

引力波望远镜的装调误差对TTL耦合噪声的影响

本文研究了引力波望远镜的装调误差对望远镜的TTL(tilt-to-length,角度抖动与光程读出之间的)耦合噪声的影响。保持其他参量不变,仅对引力波望远镜中的某项装调公差进行赋值,仿真分析引力波望远镜中的某项装调公差对出瞳位置变化的影响,进而计算出激光干涉信号经过全玻璃激光干涉仪最终在四象限光电探测器上进行干涉时,由于引力波望远镜的装调公差的存在导致的TTL耦合噪声的变化情况。通过对比发现,引力波望远镜的主镜与次镜的距离公差,对引力波望远镜的TTL耦合噪声的影响大于其他光学元件之间的距离公差对TTL耦合噪声的影响。主镜和次镜之间的距离公差导致的TTL耦合噪声的变化与次镜和三镜之间的距离公差、三镜和四镜之间的距离公差导致的TTL耦合噪声的变化符号相反;光阑和主镜之间的距离装调公差对TTL耦合噪声的变化影响很小,可以忽略不计。各个光学元件的距离装调公差导致的TTL耦合噪声的变化量与抖动角度之间呈抛物线规律分布。在装调空间引力波望远镜时,应着重控制主镜与次镜之间的距离误差。并且可以使用次镜和三镜之间的距离装调误差、三镜和四镜之间的距离装调误差导致的TTL耦合噪声来抵消由装调主镜和次镜之间的...     

对TTL与非门电压传输特性测试实验的研究

本文通过对ＴＴＬ与非门电压传输特性的研究，介绍通过三种不同的实验方法，可以取得不同的实验效果。     

大规模雷达喇叭阵列控制系统

研制一种应用于毫米波制导仿真实验的大规模雷达喇叭阵列控制系统并进行实现;针对采用的三元组天线阵列结构,对上位机和下位机进行软件实现,对由RS485收发板和TTL控制板组成的阵列控制系统进行设计并进行利用FPGA进行实现,对整个控制系统进行软硬件协同仿真;最终对阵列控制系统采用Xilinx公司Virtex-4系列的XC4VSX55-10FFG1148C器件进行综合,差分传输逻辑和TTL控制逻辑分别占用4353LUTs 和5565 LUTs;试验证明,该系统在硬件规模和性能上都满足设计要求,具有很好的应用前景。     

一种用于核磁共振的脉冲场梯度单元

给出一种用于核磁共振谱仪的脉冲场梯度单元的详细设计. 它具有结构简洁、性能良好以及成本低廉等特点. 该单元只需外部设备提供两条TTL触发线即可产生任意波形的梯度脉冲，因此可以方便地与商用核磁共振仪器配套使用.     

电磁脉冲对CMOS与非门的干扰和损伤效应与机理（英文）

利用Sentaurus-TCAD建立了CMOS与非门电路的二维电热模型,仿真研究了在电磁脉冲注入下,CMOS与非门电路产生的扰乱和损伤效应及其机理。结果表明,在EMP注入下,电路输出电压、内部的峰值温度呈周期性的"下降-上升",当注入功率较大时,EMP撤销后输出电压停留在异常值,PMOS源极电流增加,温度不断上升,最终烧毁在PMOS源极,这是因为器件内部产生了闩锁效应。随着脉宽的增加,损伤功率阈值减小而损伤能量阈值增大,通过数据拟合得到脉宽与损伤功率阈值和损伤能量阈值的关系。该结果可对EMP损伤效应进行评估并对器件级EMP抗毁伤加固设计具有指导作用。     

电磁脉冲对CMOS与非门的干扰和损伤效应与机理

利用Sentaurus-TCAD建立了CMOS与非门电路的二维电热模型,仿真研究了在电磁脉冲注入下,CMOS与非门电路产生的扰乱和损伤效应及其机理。结果表明,在EMP注入下,电路输出电压、内部的峰值温度呈周期性的“下降-上升”,当注入功率较大时,EMP撤销后输出电压停留在异常值,PMOS源极电流增加,温度不断上升,最终烧毁在PMOS源极,这是因为器件内部产生了闩锁效应。随着脉宽的增加, 损伤功率阈值减小而损伤能量阈值增大,通过数据拟合得到脉宽与损伤功率阈值和损伤能量阈值的关系。该结果可对EMP损伤效应进行评估并对器件级EMP抗毁伤加固设计具有指导作用。     

国外点滴

<正> 世界上第一个自动对焦——TTL单镜反光照相机日本旭光光学工业公司于1981年11月21日开始发售世界上第一个采用“机身AF”方式的TTL自动对焦单镜反光照相机Pentax ME-F和SMC Pentax AF Zoom35～70mmF2.8自动对焦变焦镜头。该AF(Automatic Fo-cusing即自动对焦)系统称为Pentax TTL-     

判读仪输片步进电机的数字控制

本文介绍KD-9/35型判读仪输片机构的TTL数控步进电机驱动系统,对设计中有关技术细节,如时钟源,TTL-PMOS接口,加电复位电路、噪声的消除、供片和收片轴的张紧力矩的处理等,作了较详尽的探讨。     

TK512B科学CCD相机驱动设计

科学CCD器件的广泛应用是在复杂的驱动器研制的基础上发展的，随着过去那种采用标准TTL电路构成系统的积木式电路设计方法的摒弃以及大规模可编程器件的逐渐使用，带来了数字电路设计的革命；     

HDC: An adaptive buffer replacement algorithm for NAND flash memory-based databases

This paper proposes an adaptive buffer replacement algorithm for NAND flash memory-based databases, which is called HDC. HDC introduces an efficient replacing index for selecting pages to be evicted. This replacing index considers two factors: the hot degree of each page and the cost of writing the victim page back to NAND flash memory. It can adaptively change the weight of each factor according to the cost ratio of NAND flash memory. HDC also introduces an efficient partial update scheme, which only writes the dirty data within the dirty victim page back to NAND flash memory for further reducing the number of write operations and writes the dirty data to the free block with the lowest erase count for improving the wear-leveling degree of NAND flash memory. We conduct trace-driven simulations on two kinds of NAND flash memories the cost ratios of which are 118:1 and 2:1. The experimental results show that HDC outperforms the state-of-the-art algorithms on both these kinds of NAND flash memories.     

Proof of concept of directed OR/NOR and AND/NAND logic circuit consisting of two parallel microring resonators

We propose and demonstrate a directed OR/NOR and AND/NAND logic circuit consisting of two parallel microring resonators (MRRs). We use two electrical signals representing the two operands of the logical operation to modulate the two MRRs through the thermo-optic effect, respectively. The final operation results are represented by the output optical signals. Both OR/NOR and AND/NAND operations at 10 kbps are demonstrated.     

A novel time-to-live countdown scheme based on asymmetric Mach-Zehnder interferometer and Fabry-Perot semiconductor optical amplifier

We propose a novel optical time-to-live (TTL) processing scheme using asymmetric Mech-Zehnder interferometer (AMZI) and Fabry-Perot semiconductor optical amplifier (FP-SOA). AMZI transfers M TTL pulses into M - 1 pulses and two residual pulses with 6-dB power difference. FP-SOA enhances the power difference between the M- 1 pulses to the residual pulses to more than 10 dB. A numerical model is established for verifying the feasibility of this scheme.     

一种基于STM32的NAND flash的块分配框架设计

STM32对大容量数据文件存储与管理问题可通过NAND flash来解决。而NAND flash的高效管理需要文件系统参与。NAND flash有特殊的块读写及擦除机制,一般的嵌入式文件系统组织结构并不完全兼容NAND flash。针对NAND flash的特点兼顾STM32的资源承受力要提出新的NAND flash块分配框架,框架通过块分配槽这种数据结构,在不使用块分配表与垃圾表的情况下,实现了NAND flash均衡负载与垃圾块的回收;同时通过节点分配栈与文件节点表的配合来提高STM32对文件的读写速度,空间利用率和系统性能。仿真实验和计算结果表明该块分配框架可有效提高NAND flash块的均衡负载与节省RAM空间。     

Incoherent all-optical NAND-, NOR-, and XOR-gate using photorefractive fanning effect

An all-optical computing device is proposed to perform incoherent digital operations, including the NAND, NOR, and XOR gates. Instead of using interferometer-based methods, making use of self-generating noise gratings and the erasure of them by another beam in two photorefractive self-pumped phase conjugators (SPPC), the device is able to process mutually incoherent as well as mutually coherent inputs. Changing the orientations of two polarizers and a photorefractive crystal, we are able to perform incoherent parallel NAND, NOR, and XOR operations with this proposed setup. Received: 18 November 1998 / Revised version: 10 February 1999 / Published online: 12 April 1999     

Simulation of two photon absorption in silicon wire waveguide for implementation of all optical logic gates

All optical switching action of silicon wire waveguide for the design of the proposed logic gates is simulated. This is one possible building block of the future all optical computer or photonic devices. All optical logic gates NOT, NAND and AND gates using two photon absorption in silicon wire waveguide are presented. Use of ultra short pulse has negligible free carrier absorption effect; hence the operating speed of the gates is very high and has potential application in photonic processing. NAND gate is universal one and thus one can perform any logical operation using this. The device (Si wire WG) requires low energy pulse and is ultrafast one.     

NOR and NAND gates using two photon absorption in silicon wire waveguide

Ultrafast all-optical NOR gate based on two photon absorption (2PA) process in SOI waveguide is already established. We have designed NAND gate also based on this process with a novel waveguide coupler structure. Power attenuation due to 2PA process and the working of these gates is developed with FDTD simulation. Dominant 2PA process is incorporated in FDTD update equations and it is shown that the influence of high intensity pump pulses on a different frequency continuous probe beam can be utilized to form NOR as well as NAND gates.     

The effect of TTL on the information traffic

In real communication protocols, the information packets have a finite Time-to-Live (TTL) to avoid the waste of network resources, such as infinite loop induced by routing error or too long transferring time. In this paper, we introduce TTL into the information traffic model on Barabási-Albert scale-free networks under local routing strategy and focus on its effect on the network capacity measured by the critical point (R_c) of phase transition from free flow to congestion. Simulations show that the network capacity and the communication velocity are improved. However, some packets are dropped before they arrived at destinations. It is found that the share of successfully arrived packets monotonously increases with the increment of TTL and it is considerably acceptable if TTL is not very small. We also examine the effect of TTL on the positive-feedback preference (PFP) internet model and the results are alike. Our work may be helpful in quantifying the effect of packet lifetime in real communication networks and in routing strategy designing.     

All optical logic NAND gate based on two-photon absorption in semiconductor optical amplifiers

We propose a new scheme to realize all optical logic NAND operating at high speeds up to 250 Gb/s utilizing the ultrafast phase response during two-photon absorption (TPA) process in semiconductor optical amplifiers (SOA). NAND gate is important because other Boolean logic elements and circuits can be realized using NAND gates as basic building blocks. Rate equations for semiconductor optical amplifiers (for input data signals with high intensity) configured in the form of a Mach-Zehnder interferometer have been solved. The input intensities are high enough so that the two-photon induced phase change is larger than the regular gain induced phase change. The performance of this scheme is analyzed by calculating the quality factor of the resulting data streams. The results show that both AND and NAND operations at 250 Gb/s with good signal to noise ratio are feasible.