异质结型CuO/ZnO复合纳米线的制备及光催化性能

在室温下,通过溶液法在Cu衬底上制备了CuO纳米线,然后采用溶剂热法在CuO纳米线表面生长ZnO纳米颗粒以构建CuO/ZnO复合纳米线异质结构.利用扫描电镜、透射电镜、X射线衍射仪和X射线光电子能谱分析了样品的形貌、结构和元素组成.结果显示CuO/ZnO复合纳米线由ZnO纳米颗粒和CuO纳米线组成.在模拟太阳光照射下,...     

衬底位置对化学气相沉积法制备的磷掺杂p型ZnO纳米材料形貌和特性的影响

采用化学气相沉积方法,在无催化剂的条件下,通过改变衬底位置在Si(100)衬底上制备出了高取向的磷掺杂ZnO纳米线和纳米钉.测试结果表明,当衬底位于反应源上方1.5 cm处时,所制备的样品为钉状结构,而当衬底位于反应源下方1 cm处时样品为线状结构.对不同形貌磷掺杂ZnO纳米结构的生长机理进行了研究.此外,在ZnO纳米结构的低温光致发光谱中观测到了一系列与磷掺杂相关的受主发光峰.还对磷掺杂ZnO纳米结构/n-Si异质结I-V曲线进行了测试,结果表明,该器件具有良好的整流特性,纳米线和纳米钉异质结器件的开启电压分别为4.8和3.2 V.     

海胆状ZnO纳米线阵列的制备及其光学性能

采用一种低成本的有效方法制备出了有序排列的海胆状ZnO纳米线阵列。首先利用自组装的方法得到了单层的聚苯乙烯(PS)小球,以其为模板用水热法在小球表面生长ZnO纳米线,得到了由PS小球和ZnO纳米线构成的海胆状结构。纳米线的直径均一,长度可通过水热反应时间进行控制。利用这种方法制备的一维ZnO纳米结构在传感器、太阳能电池及光催化领域有潜在的应用价值。     

联合体驱使生长法制备ZnO纳米棒及其表征

在常压环境下采用联合体驱使生长(Aggregation-driven growth)法在镀有ZnO纳米薄膜的医用盖玻片衬底和锌箔上制备了不同直径、高取向、密集生长的ZnO纳米棒阵列结构,发现平均直径与生长时间呈线性关系。X射线衍射(XRD)谱图中出现了较强的(002)峰,表明制备的纳米棒阵列具有高度c轴择优生长取向;高分辨透射电子显微镜(HRTEM)和选区电子花样衍射图谱(SAED)结果表明我们得到的单根纳米棒为沿(002)生长的单晶结构。分析确定盖玻片上的纳米棒阵列是以ZnO纳米薄膜缓冲层上的ZnO种子颗粒为成核点生长形成的。     

树形结构Si/ZnO纳米线阵列的制备及光学性能

用一种低成本的方法制备出了树形结构Si/ZnO纳米线阵列。首先在室温条件下用金属辅助化学腐蚀法在Si(100)衬底上制备了Si纳米线阵列,Si纳米线的直径尺寸及分布都很均匀,通过改变腐蚀时间,能够得到高度不同的Si纳米线阵列。利用磁控溅射在Si纳米线表面制备一层ZnO薄膜,然后利用水热法在Si纳米线阵列上生长了ZnO纳米线。通过扫描电子显微镜(SEM)、能谱分析仪(EDS)和光致发光(PL)测试对样品进行了表征。通过这种方法制备的Si/ZnO复合结构在太阳能电池、光催化等领域有潜在应用价值。     

硅纳米线的PEOVD生长研究

本文以硅烷（SiH4）为反应气体,利用等离子体化学气相沉积（PECVD）方法在硅（100）衬底上生长硅纳米晶体、纳米线。应用扫描电镜观察不同条件下生长的样品表面,发现衬底条件对硅纳米结构的影响十分显著。在温度、压强等其它条件相同的情况下,对硅衬底应用Fe^3＋催化剂处理后,呈纳米线状结构生长,而无Fe催化剂涂覆情况下,基本呈纳米晶体状生长,说明催化剂对si纳米线的生成起了重要的促进生长作用。通过进一步研究硅纳米晶体、纳米线的等离子增强化学气相生长机理,发现它们以气-液-固（VLS）机制生长。     

ZnO纳米线紫外探测器的制备和快速响应性能的研究

一维ZnO纳米结构由于具有比表面积大、室温下具有大激子结合能等特点而受到广泛关注. 但是如何实现纳米结构的器件一直是目前研究的一个挑战. 文章通过水热方法, 在玻璃衬底上实现了ZnO纳米线横向生长, 并制备出基于ZnO纳米线的金属-半导体-金属紫外探测器. 测量结果显示器件在365 nm处探测器的响应度达到5 A/W, 并且制备的探测器在空气中对紫外光照具有快速的响应, 其上升时间约4 s, 下降时间约5 s, 这与ZnO纳米线中的氧空位吸附和脱附水分子相关.     

ZnO纳米线阵列的定向生长、光致发光及场发射性能

采用光刻和脉冲准分子激光沉积技术在Si衬底上制备了图形化的ZnO种子层薄膜。分别采用气相输运和水热合成法,制备了最小单元为30μm的图形化的垂直定向生长的ZnO纳米线阵列。X射线衍射(XRD)分析显示ZnO纳米线阵列具有高度的c轴[001]择优取向生长特性。从扫描电子显微镜(SEM)照片看出,阵列图形完整清晰,边缘整齐。纳米线阵列室温下光致发光(PL)谱线中在380nm左右具有强烈的紫外发射峰,可见光区域发射峰得到了抑制,证明ZnO纳米线缺陷少,晶体质量高。场致电子发射测量表明,ZnO纳米线阵列开启电场和阈值电场分别为2.3,4.2V/μm,具有较好的场致电子发射性能。     

ZnO纳米线的合成与生长机理

采用化学气相沉积系统制备ZnO纳米线,以覆盖一层约5nm厚的Ag薄膜的单晶Si(001)为衬底,纳米线的生长遵循气-液-固(VLS)机理。对得到的样品采用X射线衍射(XRD)和扫描电镜(SEM)进行晶体结构和形貌的表征。XRD结果表明衬底温度在600~700℃时生长的ZnO纳米线具有六方结构和统一的取向。通过扫描电子显微镜分析,比较了生长温度对纳米线直径和长度的影响。实验表明我们可以通过催化剂和温度来实现ZnO纳米线生长的可控。与传统的VLS生长方式不同的是在我们制备的ZnO纳米线顶端并没有看到催化剂颗粒,表明纳米线的生长方式是底部生长,我们对其生长机理进行了研究。     

单根六方截面ZnO纳米针制备与发光特性

利用气相传输法,以高纯度氧化锌和碳粉为原料,通过高温碳热还原法制备出可分离单根针状ZnO纳米晶体。用XRD、SEM和PL等手段对其进行了表征。结果表明:样品系沿c轴方向生长、具有六方截面自组装ZnO纳米针(线)晶体。除具有一般线状ZnO纳米晶体相似的紫外光激励的PL谱外,在800nm飞秒激光脉冲激励下,从该样品可观测到上转换紫外受激辐射。     

Position-controlled and catalyst-free growth of ZnO nanocrystals by nanoparticle-assisted pulsed laser deposition

We have synthesized ZnO nanocrystals, such as nanowires, nanorods, and nanosheets, using a nanoparticle-assisted pulsed laser deposition (NAPLD) method. Recently, we achieved position-controlled growth of the ZnO nanocrystals by means of a ZnO buffer layer and laser irradiation without any catalyst. The periodic structure was formed on the ZnO buffer layer by multi-beam interference patterning, and then vertically aligned ZnO nanowalls, corresponding to the patterning, were grown on the buffer layer. It was found that the periodic ZnO nanowalls grew along the c-axis direction by X-ray diffraction measurement. The well-aligned ZnO nanowalls are expected to be utilized as building blocks for field emitters and UV LEDs. The proposed technique can be used as one of the effective methods to control the growth position of the ZnO nanocrystals because various structures can be easily fabricated by a laser writing and a spatial light modulator.     

One step solution synthesis towards ultra-thin and uniform single-crystalline ZnO nanowires

Bundles of high-aspect-ratio single-crystalline ZnO nanowires were fabricated by a single-step mild hydrothermal condition without the use of a seeding layer, thus eliminating an annealing step. The growth yields nanowires of high aspect ratio (>200). No significant lateral growth takes place with prolonged reaction time. The morphology and aspect ratio of the final products depend on the concentration of the precursors; a highly water-soluble tetradentate cyclic tertiary amine and zinc nitrate system. The nanowires grow along the [0001] direction and have an average width of <10 nm and a narrow distribution of ±5 nm. Photoluminescence measurements of the ultra-thin nanowires exhibit a strong band-edge emission at room temperature. The highly crystalline sub tens of nanometer scale diameter nanowires can, in combination, be a good one-dimensional candidate to study optical and electronic properties. PACS 81.16.Be; 81.07.Bc     

ZnO纳米线在压力下的电学性质

 在金刚石压砧上测量了ZnO纳米线R-p和C-p关系，并和原先测量的纳米晶及体相ZnO的结果进行了比较。研究结果表明，ZnO纳米线在5.0 GPa左右发生相转变。其间的电阻-压力曲线呈指数下降趋势，电容呈指数上升趋势；在相转变之后电阻迅速上升，电容急速下降（指数下降），这与一般的块状和纳米晶的相转变都有所不同，表现出了纳米线与非线状纳米晶的差别。     

Effect of growth temperature on the ZnO nanowires prepared by thermal heating of Zn powders

ZnO nanowires have been synthesized by heating Zn powders under nitrogen (N₂) gas atmosphere. The influence of the growth temperature on the morphology, structure, and photoluminescence (PL) properties of ZnO nanowires has been investigated. At the higher-temperature growth process, thinner nanowires have been obtained. Interestingly, it is observed that the variation of growth temperature has significantly affected the photoluminescence spectra of the ZnO nanowires, showing an enhancement in the relative intensity of the green to UV emission bands with the increase of the growth temperature. In addition, the oxygen sensing properties of the as-synthesized ZnO nanowires were tested.     

Morphology engineering of ZnO nanostructures

Nanosized ZnO structures were grown by atmospheric pressure metalorganic chemical vapor deposition (APMOCVD) in the temperature range 200–500 °C at variable precursor pressure. Temperature induced evolution of the ZnO microstructure was observed, resulting in regular transformation of the material from conventional polycrystalline layers to hierarchically arranged sheaves of ZnO nanowires. The structures obtained were uniformly planarly located over the substrate and possessed as low nanowires diameter as 30–45 nm at the tips. The observed growth evolution is explained in terms of ZnO crystal planes free energy difference and growth kinetics. For comparison, the convenient growth at constant precursor pressure on Si and SiC substrates has been performed, resulting in island-type grown ZnO nanostructures. The demonstrated nanosized ZnO structures may have unique possible areas of application, which are listed here.     

Thermal evaporation synthesis of zinc oxide nanowires

High quality ZnO nanowires were synthesized at high temperature without using heterogenous catalysts. The nanowires had a uniform prismatic shape and were grown in a cacti-like morphology. Characterizations of the products by X-ray diffraction, scanning electron microscopy, and high-resolution transmission electron microscopy showed that the ZnO nanowires were single crystalline and of high purity. An intensive exciton emission was observed around 3.25 eV from the ZnO nanowires at room temperature. The growth mechanism was discussed based on the experimental conditions and the ZnO crystal growth habits. This growth method can be used to prepare other metal oxide nanowires. PACS 61.46.+w; 81.16.-c; 81.07.De, 81.05.Hd     

Growth mechanism studies of ZnO nanowire arrays via hydrothermal method

Well-controlled ZnO nanowire arrays have been synthesized using the hydrothermal method, a low temperature and low cost synthesis method. The process consists of two steps: the ZnO buffer layer deposition on the substrate by spin-coating and the growth of the ZnO nanowire array on the seed layer. We demonstrated that the microstructure and the morphology of the ZnO nanowire arrays can be significantly influenced by the main parameters of the hydrothermal method, such as pH value of the aqueous solution, growth time, and solution temperature during the ZnO nanowire growth. Scanning electron microscopy observations showed that the well oriented and homogeneous ZnO nanowire arrays can be obtained with the optimized synthesis parameters. Both x-ray diffraction spectra and high-resolution transmission electron microscopy (HRTEM) observations revealed a preferred orientation of ZnO nanowires toward the c-axis of the hexagonal Wurtzite structure, and HRTEM images also showed an excellent monocrystallinity of the as-grown ZnO nanowires. For a deposition temperature of 90 °C, two growth stages have been identified during the growth process with the rates of 10 and 3 nm/min, respectively, at the beginning and the end of the nanowire growth. The ZnO nanowires obtained with the optimized growth parameters owning a high aspect ratio about 20. We noticed that the starting temperature of seed layer can seriously influence the nanowire growth morphology; two possible growth mechanisms have been proposed for the seed layer dipped in the solution at room temperature and at a high temperature, respectively.     

Controllable synthesis and shape-dependent photocatalytic activity of ZnO nanorods with a cone and different aspect ratios and of short-and-fat ZnO microrods by varying the reaction temperature and time

ZnO nanorods with a cone and different aspect ratios and short-and-fat ZnO microrods were synthesized via a hydrothermal reaction of Zn with Zn(CH₃COO)₂ and H₂O. The control over these ZnO nanocrystals with a wurtzite structure and different shapes was achieved by adjusting only the reaction temperature and time. A possible kinetic mechanism was proposed to account for the growth of these ZnO nanocrystals with different shapes. Photocatalytic activities of ZnO nanocrystals with distinctive shapes in the degradation of methyl orange were investigated. The results indicate that the photocatalytic ability of the ZnO nanorods with a cone and different aspect ratios is stronger than that of the short-and-fat microrods.     

锡催化剂助生长法制备孪晶ZnO纳米线及其结构表征

用SnO和Zn的均匀混合物在高温下共烧通过VLS机制制备出孪晶ZnO纳米线的均匀结构。SEM图像显示孪晶ZnO纳米线的直径在100~200nm之间,长度在几十微米到几百微米之间的范围内,有的甚至达到了毫米级,产率也非常的高。TEM图像中ZnO孪晶纳米线顶端的金属Sn颗粒表明了孪晶结构的Sn催化生长。高分辨电子图谱显示了氧化锌纳米线孪晶结构的特征。电子衍射分析发现孪晶氧化锌的晶带轴的方向是[0110],孪晶面为(1013),并且通过明场像和暗场像分析了孪晶纳米线的晶格关系,确定了孪晶纳米线的汽-液-固(VLS)生长机制。