High-temperature all-optical intersubband quantum well Terahertz switch

In this article an asymmetric intersubband quantum well structure as a high temperature terahertz (THz) optical switch is proposed. In our proposed structure the incoming low power energy photon (THz control signal) causes an optical switching. In this structure we introduce an optical terahertz switch based on coherent population trapping (CPT) phenomena. In the presence of electromagnetic THz field, quantum interference between the terahertz control field and short-wavelength probe field under appropriate condition, the medium becomes transparent (zero absorption) for the probe field. So the absorption and refraction characteristic of optical probe field can be modified with THz radiation. Therefore this idea is suitable for all – optical terahertz switching.     

Phase-locking of a 2.5 THz quantum cascade laser to a frequency comb using a GaAs photomixer

We report the heterodyne detection and phase locking of a 2.5?THz quantum cascade laser (QCL) using a terahertz frequency comb generated in a GaAs photomixer using a femtosecond fiber laser. With 10?mW emitted by the QCL, the phase-locked signal at the intermediate frequency yields 80?dB of signal-to-noise ratio in a bandwidth of 1?Hz.     

Terahertz Quantum Cascade Laser at 3.39THz

We demonstrate the growth of terahertz quantum cascade laser （THz QCL） by gas source molecular beam epitaxy. X-ray diffraction and cross-sectional transmission electron microscopic measurements show the high crystalline quality of the THz QCL active region, From the cross-sectional transmission electron microscopy image, sharp interfaces are observed and the deduced cascade period thickness is consistent with the result of x-ray diffraction. The test device is lasing at 3.39THz and operating up to lOOK in pulsed mode. At IOK, the maximum output power is greater than 1 mW with a threshold current density of 738 A/cm^2.     

差频可调谐太赫兹技术的新进展

太赫兹技术在最近30年来得到快速发展, 并在医学、生物、农业、材料、安检、通信、天文等领域得到广泛应用. 从太赫兹源的频谱特性可以分为窄带(单频)太赫兹源和宽带太赫兹源. 从频谱技术方面来说, 相干的宽带和窄带太赫兹谱是一种互补性关系, 具有各自的技术特点和应用范围. 宽带太赫兹谱可以用于快速获取较宽频谱范围的分子振转谱, 实现混合特征谱的快速检测或成像. 窄带太赫兹源具有很好的光谱灵敏度和分辨率, 适用于太赫兹抽运-探测、分子振转能级谱精细结构分辨 以及太赫兹远程探测和成像. 因此研制具有可调谐的高峰值功率的窄带太赫兹源是适用于探测和识别分子振转能级指纹谱的应用需求, 而差频技术是获得高功率和宽调谐窄带太赫兹源最重要的技术之一. 为了突出该技术的最新进展, 本综述引证论文仅仅限于近5 年来基于差频技术产生太赫兹波的研究进展, 分为光学激光差频源和量子级联激光器差频源两大部分. 对于光学激光差频源, 分别对目前文献报道的各种双波长差频源和太赫兹产生用的非线性晶体进行分类介绍, 并给出所采用的技术和实验结果; 对于量子级联激光器差频源, 分别介绍了量子级联激光器中的差频产生技术和波长调谐技术的最新进展. 量子级联激光器差频太赫兹源是目前实现量子级联激光器在太赫兹波段室温运转的惟一技术, 是实现小型化、窄带宽调谐和室温运转太赫兹源的新发展领域, 值得关注.     

外差式相干探测时域光谱仪对磷化铟（InP）晶片的超宽频带太赫兹光谱的探测

磷化铟（InP）属于Ⅲ-Ⅴ族化合物半导体材料, 在毫米波的应用中展示出了高性能,在非线性太赫兹器件应用上具有很大的潜力。以前关于InP的研究主要集中于太赫兹频率在0.1～4 THz的频率范围内,在4～10 THz频率范围内InP的太赫兹光学数据还是空白。该研究利用空气等离子体相干探测太赫兹波的时域光谱系统研究了无掺杂的InP晶片在超宽THz频率范围（0.5～18 THz）内的光学特性, 实验中用电离的空气作为太赫兹的发射器和探测器, 利用可以调制的局部偏压诱导二次谐波产生,使在气体中太赫兹波的相干探测成为可能,明显提高了系统的动态范围和灵敏度。产生的太赫兹频谱宽度主要被激光脉冲持续时间所限制,太赫兹脉冲通过InP晶片后相对于参考脉冲会延迟,同时振幅会降低。另外,太赫兹信号的频谱振幅在6.7～12.1 THz范围内下降到本底噪声。同时还可以看出InP晶片在6.7～12.1 THz频率范围内不透光,在0.8～6.7 THz以及12.1～18 THz频率范围内InP的吸收系数相对较低,特别是在15～17.5 THz范围内吸收系数很低并且保持相对稳定,与此同时它的折射率单调增加。这些发现将有助于基于InP晶片的非线性太赫兹器件设计。     

Performance optimization for terahertz quantum cascade laser at higher temperature using genetic algorithm

The aim of this work is to establish an approach for obtaining improved design parameters for high temperature operation of terahertz quantum cascade lasers using a multi-objective evolutionary algorithm. For studying the lasing conditions of a quantum cascade laser, a self-consistent model is adopted. This model uses standard wave function approximation and effective mass approximation with relevant scattering mechanisms to solve Schrodinger’s equation for the cascaded quantum wells. Fermi’s Golden Rule is then used to calculate the corresponding lifetime of each eigen states. To describe the coherent evolution of wave functions and phase breaking, density matrix formalism is employed. Subsequently, laser rate equations are used for calculating the parameters related to electronic transport in the device. These parameters are then utilized for investigating the temperature dependence of existing terahertz quantum cascade lasers. Finally, using an optimization technique based on Genetic algorithm, design parameters for resonant-phonon quantum cascade laser are obtained within the terahertz frequency range. The results illustrate that this optimization process can offer improvement in the performance of quantum cascade lasers in terahertz region at an elevated temperature. Moreover, the results also reveal that significant increase in operating temperature of a resonant phonon terahertz QCL is unlikely and hence novel design approaches should be considered for operating THz QCLs at room temperature.     

单发太赫兹时域光谱技术

太赫兹时域光谱技术(THz-TDS)广泛应用于材料、生物医学、化学、药学、安检等诸多领域。传统扫描式THz-TDS技术需要通过改变探测光延时逐点扫描并重构时域信号,仅适合于具有较高重复频率且稳定的太赫兹辐射源情形下的样品探测。在低重复频率或涨落较大的太赫兹辐射源情形下和不可逆过程中样品的探测,扫描式THz-TDS不再适用,需要使用单发THz-TDS技术,单发THz-TDS技术原则上仅需要一个激光脉冲就可以获取一个完整的太赫兹时域脉冲波形。介绍几种主要的单发THz-TDS探测技术,这些技术都利用了电光晶体的泡克尔斯效应,通过测量探测光的某个物理量的变化来提取太赫兹信号。根据探测方法不同可分为光谱编码、空间编码和互相关等技术。在光谱编码技术中,探测光不同频率成分在时间上发生分离,不同时间成分分别被太赫兹脉冲不同时刻电场调制,通过测量探测光各个频率被太赫兹脉冲调制前后的光谱的变化提取太赫兹脉冲波形。该方法光路简单,测量结果直观,有较高的信噪比,但其时间分辨率较低,且被测太赫兹信号容易产生失真。为提高被测信号的时间分辨率,有人提出了空间编码技术,即不同位置探测光分别被太赫兹脉冲不同时刻电场调制,通过测量探测光各个位置太赫兹脉冲调制前后的光强变化提取太赫兹脉冲波形。根据不同空间展开方法可分为一维空间编码技术和二维空间编码技术。空间编码技术中虽然有较高的时间分辨率,但由于探测光在空间展开能量分散使得其信噪比相对较低。此外,还有一种较高时间分辨率的技术即互相关技术,可分为共线互相关和非共线互相关技术。在非共线互相关技术中,被太赫兹脉冲调制的激光啁啾脉冲与短脉冲互相关作用产生二次谐波,通过太赫兹脉冲调制前后二次谐波空间分布变化来提取太赫兹信号;在共线互相关技术中被太赫兹脉冲调制的啁啾脉冲与短脉冲共线入射到光谱仪,通过干涉条纹提取太赫兹信号,该技术提高了时间分辨率和信噪比,但光路布置复杂,不能进行实时监测。回顾了这几种单发THz-TDS探测技术的发展历程,综述探测技术的原理、实验方案和测量结果,并讨论了这些探测技术的优势和不足。     

Mapping an on-chip terahertz antenna by a scanning near-field probe and a fixed field-effect transistor

In the terahertz(THz) regime,the active region for a solid-state detector usually needs to be implemented accurately in the near-field region of an on-chip antenna.Mapping of the near-field strength could allow for rapid verification and optimization of new antenna/detector designs.Here,we report a proof-of-concept experiment in which the field mapping is realized by a scanning metallic probe and a fixed AlGaN/GaN field-effect transistor.Experiment results agree well with the electromagnetic-wave simulations.The results also suggest a field-effect THz detector combined with a probe tip could serve as a high sensitivity THz near-field sensor.     

ZnO-based terahertz quantum cascade lasers

High-power terahertz sources operating at room-temperature are promising for many applications such as explosive materials detection, non-invasive medical imaging, and high speed telecommunication. Here we report the results of a simulation study, which shows the significantly improved performance of room-temperature terahertz quantum cascade lasers (THz QCLs) based on a ZnMgO/ZnO material system employing a 2-well design scheme with variable barrier heights and a delta-doped injector well. We found that by varying and optimizing constituent layer widths and doping level of the injector well, high power performance of THz QCLs can be achieved at room temperature: optical gain and radiation frequency is varied from 108 cm^?1 @ 2.18 THz to 300 cm^?1 @ 4.96 THz. These results show that among II–VI compounds the ZnMgO/ZnO material system is optimally suited for high-performance room-temperature THz QCLs.     

Polarization insensitive terahertz metamaterial absorber

We present the simulation, implementation, and measurement of a polarization insensitive resonant metamaterial absorber in the terahertz region. The device consists of a metal/dielectric-spacer/metal structure allowing us to maximize absorption by varying the dielectric material and thickness and, hence, the effective electrical permittivity and magnetic permeability. Experimental absorption of 77% and 65% at 2.12 THz (in the operating frequency range of terahertz quantum cascade lasers) is observed for a spacer of polyimide or silicon dioxide respectively. These metamaterials are promising candidates as absorbing elements for thermally based terahertz imaging.     

Potential‐inserted quantum well design for quantum cascade terahertz lasers

We report on a new design of terahertz quantum cascade laser based on a single, potential‐inserted quantum well active region. The quantum well properties are engineered through single monolayer InAs inserts. The modeling is based on atomistic, spds* tight‐binding calculations, and performances are compared to that of the classical three‐well design. We obtain a 100% increase of the oscillator strength per unit length, while maintaining a high, nearly temperature‐independent contrast between phonon‐induced relaxation times of the upper and lower lasing states. The improved performances are expected to allow THz lasing at room temperature.     

Integrated injection seeded terahertz source and amplifier for time-domain spectroscopy

We used a terahertz (THz) quantum cascade laser (QCL) as an integrated injection seeded source and amplifier for THz time-domain spectroscopy. A THz input pulse is generated inside a QCL by illuminating the laser facet with a near-IR pulse from a femtosecond laser and amplified using gain switching. The THz output from the QCL is found to saturate upon increasing the amplitude of the THz input power, which indicates that the QCL is operating in an injection seeded regime.     

影响AlGaN/GaN量子级联激光器性能的因素研究

在已有理论基础之上,采用严格的计算方法对激光器实现太赫兹(THz)波的辐射进行了可能性分析。利用传递矩阵法,通过Matlab软件计算了基于AlGaN/GaN材料体系的三能级量子级联激光器导带子能级与电子波函数的分布,详细分析了由该材料特有的极化效应所产生的极化场,得出了在近共振条件下偶极跃迁元、外加电场、垒层Al组分及导带子能级能级差之间的关系,并研究了它们对激光器性能的影响。分析结果表明,实现受激辐射的条件非常严格,Al组分取0.15或0.16时较为适宜,同时外加电场需大于63kV/cm,但不能过大,这样才能满足近共振条件,实现粒子数反转达到太赫兹量子级联激射。在Al组分为0.15,外加电场为69.0kV/cm时激光器的偶极跃迁元最大,表明跃迁几率也最大,对激光器的性能有利,可以为量子级联激光器构造较好的有源区。     

太赫兹量子级联激光器中有源区上激发态电子向高能级泄漏的研究

利用热力学统计理论和激光器输出特性理论,建立了太赫兹量子级联激光器(THz QCL)有源区中上激发态电子往更高能级电子态泄漏的计算模型,以输出功率度量电子泄漏程度研究分析了晶格温度和量子阱势垒高度对电子泄漏的影响.数值仿真结果表明,晶格温度上升会加剧电子泄漏,并且电子从上激发态泄漏到束缚态的数量大于泄漏到阱外连续态,同时温度的上升也会降低激光输出功率.增加量子阱势垒高度能抑制电子泄漏,并且有源区量子阱结构中存在一个最优量子阱势垒高度. THz QCL经过最优量子阱势垒高度优化后,工作温度得到提升,其输出功率相比于以往的结果也有所提高.研究结果对优化THz QCL有源区结构、抑制电子泄漏和改善激光器输出特性有指导作用.     

2.9THz束缚态向连续态跃迁量子级联激光器研制

采用气源分子束外延技术生长了GaAs/AlGaAs束缚态向连续 态跃迁的太赫兹量子级联激光器材料, 基于半绝缘等离子体波导工艺制作了太赫兹量子级联激光器. 测量了激光器的发射光谱和功率-电流-电压关系曲线, 研究了器件的激光特性. 器件激射频率约2.95 THz, 脉冲模式下, 最高工作温度为67 K. 连续波模式下, 阈值电流密度最低为230 A/cm², 最大光输出功率1.2 mW, 最高工作温度为30 K. 关键词： 太赫兹 量子级联激光器 分子束外延 波导     

Terahertz dual-wavelength quantum cascade laser based on GaN active region

In this paper a novel terahertz (THz) quantum cascade laser (QCL) based on GaN/AlGaN quantum wells has been proposed, which emits at two widely separated wavelengths 33 and 52 μm simultaneously in a single active region. The large LO-phonon energy (～90 meV), the ultrafast resonant phonon depopulation of the lower radiative levels, suppression of the electrons that escape to the continuum states and selective carrier injection and extraction all together lead to a considerable enhancement in the operating temperature of the structure. All calculations have been done at a temperature of 265 K. Moreover, similar behavior of the output optical powers is another remarkable feature, which makes both wavelengths useful for special applications.     

High sensitivity and high selectivity terahertz biomedical imaging

We demonstrate two distinct emerging terahertz (THz) biomedical imaging techniques.One is based on the use of a new single frequency THz quantum cascade laser and the other is based on broadband THz time domain spectrocopy.The first method is employed to derive a metastasis lung tissue imaging at 3.7 THz with clear contrast between cancerous and healthy areas.The second approach is used to study an osseous tissue under several imaging modalities and achieve full THz spectroscopic imaging based on the freque...     

High-quality MBE growth of AlχGa1-χ As-based THz quantum cascade lasers

High-quality GaAs-based quantum cascade laser (QCL) structures for the terahertz (THz) emission have been grown by solid source molecular-beam epitaxy. Ex-situ high-resolution x-ray diffraction shows that layer thickness and its control is the most critical growth aspect and that the lasing potential of the structure can be determined by the thickness accuracy of the layers. For our samples, the thickness tolerance for working lasing structures emitting approximately 100 μm was determined to be minimally above 1% for a 15 μm active region which was composed of 54.6 nm cascade cells. Increasing interface roughness adversely affects the lasing threshold and power. Presented at 5-th International Conference Solid State Surfaces and Interfaces, November 19–24, 2006, Smolenice Castle, Slovakia     

基于太赫兹量子阱探测器的太赫兹量子级联激光器发射谱研究

采用一个光谱匹配的太赫兹(THz)量子阱探测器(QWP)研究了一激射频率约为41 THz的THz量子级联激光器(QCL)在不同驱动电流下的发射谱,分析了测量得到的发射谱谱型和谱峰位置,根据测量的发射谱估算了太赫兹量子级联激光器发射功率随驱动电流变化的情况,从而得到了THz QCL激射的电流密度范围及其阈值电流密度.文中还研究了THz QWP在不同温度下对THz QCL 激光辐射的响应特性.研究结果表明,THz QWP在表征THz QCL的发射谱方面是一种很好的探测器,并有望成为未来THz通信中的接收装置. 关键词： 太赫兹量子阱探测器 太赫兹量子级联激光器 太赫兹通信 Fourier变换红外光谱     

Room‐temperature terahertz emission from ZnSe‐based quantum cascade structures: A simulation study

We identified conditions for room‐temperature operation of terahertz quantum cascade lasers (THz QCLs) where variable barrier heights are used on ZnSe/Zn_1–xMg_x Se material systems. The THz QCL devices are based on three‐level two‐well design schemes. The THz QCL lasers with alternating quantum barriers with different heights were compared with THz QCL laser structures with fixed quantum barrier heights. It is found that the THz QCL device with novel design employing variable barrier heights achieved the terahertz emission of about 1.45 THz at room‐temperature (300 K), and has improved laser performance due to the suppression of thermally activated carrier leakage via higher‐energy parasitic levels. Thus, THz QCL devices employing the design with variable barrier heights may lead to future improvements of the operating temperature and performance of THz QCL lasers. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)