A study of spectral element and discontinuous Galerkin methods for the Navier–Stokes equations in nonhydrostatic mesoscale atmospheric modeling: Equation sets and test cases

We present spectral element (SE) and discontinuous Galerkin (DG) solutions of the Euler and compressible Navier–Stokes (NS) equations for stratified fluid flow which are of importance in nonhydrostatic mesoscale atmospheric modeling. We study three different forms of the governing equations using seven test cases. Three test cases involve flow over mountains which require the implementation of non-reflecting boundary conditions, while one test requires viscous terms (density current). Including viscous stresses into finite difference, finite element, or spectral element models poses no additional challenges; however, including these terms to either finite volume or discontinuous Galerkin models requires the introduction of additional machinery because these methods were originally designed for first-order operators. We use the local discontinuous Galerkin method to overcome this obstacle. The seven test cases show that all of our models yield good results. The main conclusion is that equation set 1 (non-conservation form) does not perform as well as sets 2 and 3 (conservation forms). For the density current (viscous), the SE and DG models using set 3 (mass and total energy) give less dissipative results than the other equation sets; based on these results we recommend set 3 for the development of future multiscale research codes. In addition, the fact that set 3 conserves both mass and energy up to machine precision motives us to pursue this equation set for the development of future mesoscale models. For the bubble and mountain tests, the DG models performed better. Based on these results and due to its conservation properties we recommend the DG method. In the worst case scenario, the DG models are 50% slower than the non-conservative SE models. In the best case scenario, the DG models are just as efficient as the conservative SE models.     

快放电直线型变压器驱动源磁芯脉冲损耗特性

建立了快脉冲磁芯损耗特性测试平台,对比研究了50 m的DG6硅钢和25 m的2605TCA非晶两种材料磁芯损耗特性;采用一种新的特征参量(磁芯单位面积上激磁电压陡度)来规范磁芯的激磁电压条件,使得实验结果与快放电直线型变压器驱动源实际工作条件下磁芯性能具有可比性;通过测量初级漏电流及次级开路电压,获得了相同激磁条件下两种磁芯等效损耗电阻的大小,50 m 的DG6硅钢磁芯损耗约为25 m的2605TCA非晶磁芯损耗的4倍;计算了两种材料磁芯总损耗中涡流损耗所占的比例,50 m的DG6硅钢磁芯涡流损耗占总损耗的75%,25 m的2605TCA非晶磁芯涡流损耗占总损耗的28%。     

Effect of bias condition on heavy ion radiation in bipolar junction transistor

The characteristic degradations in silicon NPN bipolar junction transistor (BJT) of 3DG142 type are examined under the irradiation with 40-MeV chlorine (Cl) ions under forward, grounded, and reverse bias conditions, respectively. Different electrical parameters are in-situ measured during the exposure under each bias condition. From the experimental data, larger variation of base current (I_B) is observed after irradiation at a given value of base-emitter voltage (V_BE), while the collector current is slightly affected by irradiation at a given V_BE. The gain degradation is affected mostly by the behaviour of the base current. From the experimental data, the variation of current gain in the case of forward bias is much smaller than that in the other conditions. Moreover, for 3DG142 BJT, the current gain degradation in the case of reverse bias is more severe than that in the grounded case at low fluence, while at high fluence, the gain degradation in the reverse bias case becomes smaller than that in the grounded case.     

Investigation of the characteristics of GIDL current in 90nm CMOS technology

A specially designed experiment is performed for investigating gate-induced drain leakage (GIDL) current in 90nm CMOS technology using lightly-doped drain (LDD) NMOSFET. This paper shows that the drain bias $V_{\rm D}$ has a strong effect on GIDL current as compared with the gate bias $V_{\rm G}$ at the same drain--gate voltage $V_{\rm DG}$. It is found that the difference between $I_{\rm D}$ in the off-state $I_{\rm D}-V_{\rm G}$ characteristics and the corresponding one in the off-state $I_{\rm D}-V_{\rm D}$ characteristics, which is defined as $I_{\rm DIFF}$, versus $V_{\rm DG}$ shows a peak. The difference between the influences of $V_{\rm D}$ and $V_{\rm G}$ on GIDL current is shown quantitatively by $I_{\rm DIFF}$, especially in 90nm scale. The difference is due to different hole tunnellings. Furthermore, the maximum $I_{\rm DIFF }$($I_{\rm DIFF,MAX})$ varies linearly with $V_{\rm DG}$ in logarithmic coordinates and also $V_{\rm DG}$ at $I_{\rm DIFF,MAX}$ with $V_{\rm F}$ which is the characteristic voltage of $I_{\rm DIFF}$. The relations are studied and some related expressions are given.     

A two-dimensional analytical analysis of subthreshold behavior to study the scaling capability of nanoscale graded channel gate stack DG MOSFETs

In this paper, a new nanoscale graded channel gate stack (GCGS) double-gate (DG) MOSFET structure and its 2-D analytical model have been proposed, investigated and expected to suppress the short-channel-effects (SCEs) and improve the subthreshold performances for nanoelectronics applications. The model predicts a shift, increasing potential barrier, in the surface potential profile along the channel, which ensures a reduced threshold voltage roll-off and DIBL effects. In the proposed structure, the subthreshold current and subthreshold swing characteristics are greatly improved in comparison with the conventional DG MOSFETs. The developed approaches are verified and validated by the good agreement found with the numerical simulation. (GCGS) DG MOSFET can alleviate the critical problem and further improve the immunity of SCEs of CMOS-based devices in the nanoscale regime.     

Corner effects in double-gate/gate-all-around MOSFETs

Two kinds of corner effects existing in double-gate (DG) and gate-all-around (GAA) MOSFETs have been investigated by three-dimensional (3D) and two-dimensional (2D) simulations. It is found that the corner effect caused by conterminous gates, which is usually deemed to deteriorate the transistor performance, does not always play a negative role in GAA transistors. It can suppress the leakage current of transistors with low channel doping, though it will enhance the leakage current at high channel doping. The study of another kind of corner effect, which exists in the corner at the bottom of the silicon pillar of DG/GAA vertical MOSFETs, indicates that the D-top structure with drain on the top of the device pillar of vertical transistor shows great advantage due to lower leakage current and better DIBL (drain induced barrier lowering) effect immunity than the S-top structure with source on the top of the device pillar. Therefore the D-top structure is more suitable when the requirement in leakage current and short channel character is critical.     

Electric stimulation fMRI of the perforant pathway to the rat hippocampus

The hippocampal formation is a brain system that is implicated in learning and memory. The major input to the hippocampus arrives from the entorhinal cortex (EC) to the dentate gyrus (DG) through the perforant path. In the present work, we have investigated the functional properties of this connection by concomitantly applying electrophysiological techniques, deep-brain electric microstimulation and functional magnetic resonance imaging in anesthetized rats. We systematically delivered different current intensities at diverse stimulation frequencies to the perforant path while recording electrophysiological and blood-oxygenation-level-dependent (BOLD) signals. We observed a linear relationship between the current intensity used to stimulate the hippocampal formation and the amplitude and extension of the induced BOLD response. In addition, we found a frequency-dependent spatial pattern of activation. With stimulation protocols and train frequencies used for kindling, the activity strongly spreads ipsilaterally through the hippocampus, DG, subiculum and EC.     

Effect of bias condition on heavy ion radiation in bipolar junction transistors

The characteristic degradations in a silicon NPN bipolar junction transistor(BJT) of 3DG142 type are examined under irradiation with 40-MeV chlorine(Cl) ions under forward,grounded,and reverse bias conditions,respectively.Different electrical parameters are in-situ measured during the exposure under each bias condition.From the experimental data,a larger variation of base current(I B) is observed after irradiation at a given value of base-emitter voltage(V BE),while the collector current is slightly affected by irradiation at a given V BE.The gain degradation is affected mostly by the behaviour of the base current.From the experimental data,the variation of current gain in the case of forward bias is much smaller than that in the other conditions.Moreover,for 3DG142 BJT,the current gain degradation in the case of reverse bias is more severe than that in the grounded case at low fluence,while at high fluence,the gain degradation in the reverse bias case becomes smaller than that in the grounded case.     

Optimum Placement of Distribution Generation Units in Power System with Fault Current Limiters Using Improved Coyote Optimization Algorithm

Electric power frameworks become intensely loaded because of the expanded power demand, and as a result, the power system faces great power losses and fault currents. The integration of Distribution Generation (DG) units plays a key role in minimizing the load pressure on a power system. DGs are transmitted with a high fault current, which surpasses the evaluations of circuit breakers. This paper presents various DG units’ optimal placement with Fault Current Limiters (FCLs) in different phases. The Improved Coyote Optimize Algorithm (ICOA) and Electrical Transient Analyzer Program (ETAP) are assessed for the proposed technique in terms of normal and faulty working status. Similarly, to enhance the efficiency of a distribution system, a fuzzy-based multi-objective mechanism is applied. The proposed method is employed on an IEEE 21-bus and 28-bus distribution system. The simulation analysis proved that the power losses and fault levels are reduced at an acceptable level.     

Analytical modeling of subthreshold current and subthreshold swing of short-channel triple-material double-gate (TM-DG) MOSFETs

An analytical model for subthreshold current and subthreshold swing of short-channel triple-material double-gate (TM-DG) MOSFETs is presented in this paper. Both the drift and diffusion components of current densities are considered for the modeling of subthreshold current. Virtual cathode concept of DG MOSFETs is utilized to model the subthreshold swing of TM-DG MOSFETs. The effect of different length ratios of the three channel regions under three different gate materials of device on the subthreshold current and subthreshold swing of the short-channel TM-DG MOSFETs have been discussed. The dependencies of subthreshold current and subthreshold swing on various device parameters have been studied. The simulation data obtained by using the commercially available 2D device simulation software ATLAS™ has been used to validate the present model.     

A class of hybrid DG/FV methods for conservation laws II: Two-dimensional cases

By comparing the discontinuous Galerkin (DG) methods, the k-exact finite volume (FV) methods and the lift collocation penalty (LCP) methods, a concept of ‘static reconstruction’ and ‘dynamic reconstruction’ was introduced for higher-order numerical methods in our previous work. Based on this concept, a class of hybrid DG/FV methods was presented for one-dimensional conservation law using a ‘hybrid reconstruction’ approach. In the hybrid DG/FV schemes, the lower-order derivatives of the piecewise polynomial are computed locally in a cell by the traditional DG method (called as ‘dynamic reconstruction’), while the higher-order derivatives are re-constructed by the ‘static reconstruction’ of the FV method, using the known lower-order derivatives in the cell itself and in its adjacent face neighboring cells. In this follow-up paper, the hybrid DG/FV schemes are extended onto two-dimensional unstructured and hybrid grids. The two-dimensional linear and non-linear scalar conservation law and Euler equations are considered. Some typical cases are tested to demonstrate the performance of the hybrid DG/FV method, and the numerical results show that they can reduce the CPU time and memory requirement greatly than the traditional DG method with the same order of accuracy in the same mesh.     

Positivity preserving semi-Lagrangian discontinuous Galerkin formulation: Theoretical analysis and application to the Vlasov–Poisson system

Semi-Lagrangian (SL) methods have been very popular in the Vlasov simulation community , , , , , ,  and . In this paper, we propose a new Strang split SL discontinuous Galerkin (DG) method for solving the Vlasov equation. Specifically, we apply the Strang splitting for the Vlasov equation [6], as a way to decouple the nonlinear Vlasov system into a sequence of 1-D advection equations, each of which has an advection velocity that only depends on coordinates that are transverse to the direction of propagation. To evolve the decoupled linear equations, we propose to couple the SL framework with the semi-discrete DG formulation. The proposed SL DG method is free of time step restriction compared with the Runge–Kutta DG method, which is known to suffer from numerical time step limitation with relatively small CFL numbers according to linear stability analysis. We apply the recently developed positivity preserving (PP) limiter [37], which is a low-cost black box procedure, to our scheme to ensure the positivity of the unknown probability density function without affecting the high order accuracy of the base SL DG scheme. We analyze the stability and accuracy properties of the SL DG scheme by establishing its connection with the direct and weak formulations of the characteristics/Lagrangian Galerkin method [23]. The quality of the proposed method is demonstrated via basic test problems, such as linear advection and rigid body rotation, and via classical plasma problems, such as Landau damping and the two stream instability.     

Kinesio Taping Application in Dysphonic Singers

IntroductionKinesio Taping (KT) application in speech therapy has been studied in a few works about dysphonia, facial nerve palsy, sialorrhea, atypical deglutition, postsurgical recovery after thyroidectomy and laryngectomy. The aim of this study was the evaluation of the possible role of KT in supporting speech therapy in singers complaining of dysphonia using singing voice handicap index (SVHI), fundamental frequency (F0), shimmer, jitter and harmonic to noise ratio (mean H/N).Materials and methodsWe enrolled consecutive singers and singing students complaining of dysphonia and voice problems. Control group (DG1) was composed of 15 individuals who underwent traditional speech therapy only, while Case group (DG2), also composed of 15 subjects, underwent traditional speech therapy associated with KT application. A computerized voice analysis was conducted using PRAAT software observing F0, jitter, shimmer and mean H/N before (t1), at mid (t2) and after (t3) the treatment. Moreover, each patient filled in the SVHI before (t1) and after (t3) the complete speech therapy treatment.ResultsThe mean F0 and H/N measured before, during and after the logopedic treatment, showed a notable increase over time (P value <0.001) both for DG1 and DG2. However, no significant difference was found comparing the two groups. Jitter and Shimmer after treatment were clearly seen to be lower than before in both groups (P value <0.001), and followed a significantly different trend over time (P value <0.001). Moreover, unlike F0 and mean H/N, these parameters underwent a significantly greater decrease in DG2 compared to DG1. Lastly, SVHI improved at t₃ and although these reductions were clear in both groups, it was greater in DG2 than in DG1.Discussion and ConclusionsOur findings are encouraging and suggest the possibility of using KT in case of vocal pathologies in singers. It is imperative to underline that the tape does not replace speech therapy, but could possibly enhance the effects of the treatment.     

Measurement of regional cerebral glucose uptake by magnetic resonance spin-lock imaging

Purpose

The regional uptake of glucose in rat brain in vivo was measured at high resolution using spin-lock magnetic resonance imaging after infusion of the glucose analogue 2-deoxy-d-glucose (2DG). Previous studies of glucose metabolism have used ¹³C-labeled 2DG and NMR spectroscopy, ¹⁸F-labeled fluorodeoxyglucose (FDG) and PET, or chemical exchange saturation transfer (CEST) MRI, all of which have practical limitations. Our goal was to explore the ability of spin-lock sequences to detect specific chemically-exchanging species in vivo and to compare the effects of 2DG in brain tissue on CEST images.

Methods

Numerical simulations of R_1p and CEST contrasts for a variety of sample parameters were performed to evaluate the potential specificity of each method for detecting the exchange contributions of 2DG. Experimental measurements were made in tissue phantoms and in rat brain in vivo which demonstrated the ability of spin-lock sequences for detecting 2DG.

Results

R_1p contrast acquired with appropriate spin-lock sequences can isolate the contribution of exchanging protons in 2DG in vivo and appears to have better sensitivity and more specificity to 2DG–water exchange effects than CEST.

Conclusion

Spin-lock imaging provides a novel approach to the detection and measurement of glucose uptake in brain in vivo.     

LTD用磁芯材料磁化特性实验研究

 通过比较测量磁化特性的几种方法，采用脉冲电容器快速放电方法，获取了ns级上升前沿的快脉冲，对高频响应比较好、适合于直线型脉冲变压器(LTD)的非晶态合金、硅钢带磁芯进行了快脉冲磁化特性实验。通过测试磁芯在快脉冲下初级电流和开路次级电压，获得了磁芯的磁滞回线；测出了它们在不同的磁感应强度随时间的变化率(dB/dt)时的相对磁导率。试验表明两种磁芯样品的相对磁导率随着dB/dt增大而减小，非晶态合金2605SA1样品磁环在dB/dt大于20 T/ms时，相对磁导率小于1 000，硅钢薄带磁芯在dB/dt大于4 T/ms时，相对磁导率小于1 000。     

Effects of Unintended Dopants on I-V Characteristics of the Double-Gate MOSFETs,a Simulation Study

In this paper, we study the effects of an unintended dopant in the channel on the current-voltage characteristics of a Double-Gate (DG) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). Non-Equilibrium Green's Function (NEGF) approach is used. A quantum transport model to calculate the drain current is presented and subthreshold swing and drain induced barrier lowering (DIBL) effect are studied.     

Effects of Unintended Dopants on I-V Characteristics of the Double-Gate MOSFETs,a Simulation Study

In this paper, we study the effects of an unintended dopant in the channel on the current-voltage char-acteristics of a Double-Gate (DG) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). Non-Equilibrium Green's Function (NEGF) approach is used. A quantum transport model to calculate the drain current is presented and subthreshold swing and drain induced barrier lowering (DIBL) effect are studied.     

A novel 10-nm physical gate length double-gate junction field effect transisto

A novel double-gate （DG） junction field effect transistor （JFET） with depletion operation mode is proposed in this paper. Compared with the conventional DG MOSFET, the novel DG JFET can achieve excellent performance with square body design, which relaxes the requirement on silicon film thickness of DG devices. Moreover, due to the structural symmetry, both p-type and n-type devices can be realized on exactly the same structure, which greatly simplifies integration. It can reduce the delay by about 60% in comparison with the conventional DG MOSFETs.     

Continuous and discontinuous Galerkin methods for a scalable three-dimensional nonhydrostatic atmospheric model: Limited-area mode

This paper describes a unified, element based Galerkin (EBG) framework for a three-dimensional, nonhydrostatic model for the atmosphere. In general, EBG methods possess high-order accuracy, geometric flexibility, excellent dispersion properties and good scalability. Our nonhydrostatic model, based on the compressible Euler equations, is appropriate for both limited-area and global atmospheric simulations. Both a continuous Galerkin (CG), or spectral element, and discontinuous Galerkin (DG) model are considered using hexahedral elements. The formulation is suitable for both global and limited-area atmospheric modeling, although we restrict our attention to 3D limited-area phenomena in this study; global atmospheric simulations will be presented in a follow-up paper. Domain decomposition and communication algorithms used by both our CG and DG models are presented. The communication volume and exchange algorithms for CG and DG are compared and contrasted. Numerical verification of the model was performed using two test cases: flow past a 3D mountain and buoyant convection of a bubble in a neutral atmosphere; these tests indicate that both CG and DG can simulate the necessary physics of dry atmospheric dynamics. Scalability of both methods is shown up to 8192 CPU cores, with near ideal scaling for DG up to 32,768 cores.     

A class of hybrid DG/FV methods for conservation laws I: Basic formulation and one-dimensional systems

By comparing the discontinuous Galerkin (DG) and the finite volume (FV) methods, a concept of ‘static reconstruction’ and ‘dynamic reconstruction’ is introduced for high-order numerical methods. Based on the new concept, a class of hybrid DG/FV schemes is presented for one-dimensional conservation law using a ‘hybrid reconstruction’ approach. In the hybrid DG/FV schemes, the lower-order derivatives of a piecewise polynomial solution are computed locally in a cell by the DG method based on Taylor basis functions (called as ‘dynamic reconstruction’), while the higher-order derivatives are re-constructed by the ‘static reconstruction’ of the FV method, using the known lower-order derivatives in the cell itself and its adjacent neighboring cells. The hybrid DG/FV methods can greatly reduce CPU time and memory required by the traditional DG methods with the same order of accuracy on the same mesh, and they can be extended directly to unstructured and hybrid grids in two and three dimensions similar to the DG and/or FV methods. The hybrid DG/FV methods are applied to one-dimensional conservation law, including linear and non-linear scalar equation and Euler equations. In order to capture the strong shock waves without spurious oscillations, a simple shock detection approach is developed to mark ‘trouble cells’, and a moment limiter is adopted for higher-order schemes. The numerical results demonstrate the accuracy, and the super-convergence property is shown for the third-order hybrid DG/FV schemes. In addition, by analyzing the eigenvalues of the semi-discretized system in one dimension, we discuss the spectral properties of the hybrid DG/FV schemes to explain the super-convergence phenomenon.