Characteristic features of the x-ray spectra of a plasma produced by heating CO2 clusters by intense femtosecond laser pulses with λ=0.8 and 0.4 μm

The x-ray spectra of a plasma produced by heating CO₂ clusters with intense femtosecond laser pulses with λ=0.8 μm and λ=0.4 μm are investigated. Spatially resolved x-ray spectra of the cluster plasma are obtained. The observed characteristic features of the x-ray emission spectra show unequivocally that such a plasma contains quite a large relative number of ions (≃10⁻²–10⁻³) with energies of 0.1–1 MeV. The contour of the OVIII Ly_α line is found to have characteristic features that are especially conspicuous when the clusters are heated with second-harmonic pulses. These features cannot be explained by any mechanisms known to the authors. Pis’ma Zh. éksp. Teor. Fiz. 68, No. 6, 454–459 (25 September 1998)     

Fragmentation of sputtered Si<Subscript><Emphasis Type="Italic">n</Emphasis></Subscript>O<Stack><Subscript><Emphasis Type="Italic">m</Emphasis></Subscript><Superscript>+</Superscript></Stack> clusters: Release kinetic and dissociation energies

The spectra of kinetic energies of positive Si _n O _m ⁺ cluster ions (n = 2–5, m = 2–7) have been measured using a double focusing ion microanalyzer with reverse geometry at instants 10⁻⁵ to 10⁻⁴ s after emission. The dissociation energies have been determined within the evaporative ensemble model and the theory of unimolecular decay reactions. The results obtained are compared with the binding energies of neutral Si _n O _m clusters.     

Photodissociation of stored metal clusters

Ion trapping allows detailed studies of atomic clusters with various interactions and over a large range of timescales. An overview of methods at hand is given and a specific example is presented in detail where size-selected Au₃₀⁺ clusters have been stored in a Penning trap and photofragmented by exposure to the third harmonic of a Nd:YAG laser. The resulting mass spectra were sampled after reaction periods varying from 10 μs to 1 s. The data are used to extract relative dissociation energies, which agree well with model-free values determined previously by other means, albeit with a slightly larger magnitude of the odd-even effect. Below n≃24 the relative dissociation energies extracted from the abundance spectra develop very little over the five orders of magnitude in time covered in the experiments. This behavior has been predicted, but not tested previously. Above n≃24 both spectra and dissociation energies develop odd-even effects after a storage time of 10–100 ms. Possible reasons for this behavior are discussed.     

X-ray diffraction studies of silicon implanted with high-energy erbium ions

Silicon crystals after implantation of erbium ions with energies in the range 0.8–2.0 MeV and doses in the range 1×10¹²–1×10¹⁴ cm⁻² have been studied by two-and three-crystal x-ray diffraction. Three types of two-crystal reflection curves are observed. They correspond to different structural states of the implanted layers. At moderate doses (1×10¹²–1×10¹³ cm⁻²) a positive strain is observed, due to the formation of secondary radiation defects of interstitial type. An increase of the implantation dose is accompanied by the formation of an amorphous layer separating the bulk layer and a thin monocrystalline surface layer. At an implantation dose of 1×10¹⁴ cm⁻² the monocrystalline surface layer is completely amorphized. Parameters of the implantation layers are determined. A model of the transformation of structural damage is discussed. Fiz. Tverd. Tela (St. Petersburg) 39, 853–857 (May 1997)     

Formation of excited states of atoms and ions in laser plasma from CuInS2

Emission spectra and the energy distribution of the excited-state population density of atoms and ions in erosion laser plasma from CuInS₂ with various crystal-structure orderings are analyzed. It is shown that increased ordering of the target crystal structure causes the excited-state energies of indium atoms generated in the laser erosion plume to increase and that sulfur atoms always emit only in transitions from highly excited states. The ratio of relative ion concentrations in the laser plasma plume is Cu⁺/In⁺/S⁺ = 0.3/0.08/2, which corresponds neither to the atomic ratio of Cu/In/S (1/1/2) in the target nor to the ratio of ionization energies. The results are explained by recombination processes for ions and by the atomization specifics of the CuInS₂ target exposed to long-wavelength radiation. The atomization consists essentially of dissociative processes expressed by CuInS₂ → CuInS + S and CuInS₂ → Cu + InS + S. The electron temperature of polycrystal (single-crystal) plasma at a distance of 1 mm from the target is 0.3 eV (0.4 eV) for atoms and 1.3 eV (2.7 eV) for ions and varies negligibly for plasma up to a distance of 7 mm from the target. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 75, No. 2, pp. 217–223, March–April, 2008.     

Luminescence properties of calcium-iodide crystals

The effect of the conditions of preparation, temperature, and the action of x rays on the luminescence properties of calcium-iodide scintillation crystals is investigated. On the basis of the results of a study of the spectral characteristics of CaI₂ and CaI₂:H₂ crystals for optical and x-ray excitation in the temperature range 90–400 K, also taking into account the results of a study of the luminescence properties of CaI₂ crystals activated by Cl⁻, Br⁻, OH⁻, and Ca²⁺ impurities, it is suggested that the 236-nm band observed in the excitation spectra of crystals of calcium iodide may be caused by an uncontrollable hydrogen impurity. The luminescence of these crystals with maximum at 395 nm is ascribed to radiative recombination of excitons trapped at H⁻ ions. Zh. Tekh. Fiz. 69, 135–136 (January 1999)     

Interaction of high-power x rays with sapphire crystals and quartz based materials

The interaction of high-power (10¹¹ W/cm²) soft (1–3 keV) x-rays with inorganic oxides (Al₂O₃ and SiO₂) is studied. It is found that when the wavelength of the x rays is comparable to the lattice constant of the crystal, besides generation of a high concentration of hot electrons and holes, there is broadening of the 2 p O²⁻-subband in the upper valence band owing to the local action of the strong x-ray field on regular oxygen sites. As a consequence, depending on the intensity of the x-ray pulses, a broadening of the fast (<1 ns) core-valence x-ray luminescence spectra is observed. Fiz. Tverd. Tela (St. Petersburg) 39, 286–289 (February 1997)     

Spatial distribution, build-up, and annealing of radiation defects in silicon implanted by high-energy krypton and xenon ions

An x-ray diffraction study of defect formation in silicon irradiated by Kr⁺ (210 MeV, 8×10¹²−3×10¹⁴ cm⁻²) and Xe⁺ (5.6 BeV, 5×10¹¹−5×10¹³ cm⁻²) ions is reported. It has been established that irradiation produces a defect structure in the bulk of silicon, which consists of ion tracks whose density of material is lower than that of the host. The specific features of defect formation are discussed taking into account the channeling of part of the ions along the previously formed tracks and the dominant role of electron losses suffered by the high-energy ions. It is shown that the efficiency of incorporation of stable defects by irradiation with high-energy ions is lower than that reached by implanting medium-mass ions with energies of a few hundred keV. Fiz. Tverd. Tela (St. Petersburg) 40, 1627–1630 (September 1998)     

Centers of charge nonuniformity and reduction of copper oxide CuO during irradiation with nitrogen ions

Long-range reduction of CuO to Cu₂O and Cu was observed by irradiating polycrystals and different planes of CuO single crystals ((110) and (020)) with 16-MeV nitrogen ions with fluence 10¹⁷ cm⁻². The infrared absorption spectra show an increase in the number of hole [CuO₄]⁵⁻ and electronic [CuO₄]⁷⁻ centers. The highest density of electronic centers and reduction occur near the surfaces of the samples. Fiz. Tverd. Tela (St. Petersburg) 41, 1564–1567 (September 1999)     

Potential possibilities of a laser plasma as a negative-ion source

The potential possibilities of a plasma heated by laser radiation as a negative-ion source are analyzed theoretically. It is shown that the efficiency of negative-ion formation in a laser plasma in the heating phase reaches 10¹⁵−10¹⁶ ions/J when the parameters of the laser radiation are optimally adjusted. Zh. Tekh. Fiz. 67, 117–120 (July 1997)     

Sputtering of AlxGa1−x As semiconductor targets by Ar+ ions with energies of 2–14 keV

Investigations of the sputtering of Al_xGa_1−x As semiconductor solid solutions by Ar⁺ ions with energies of 2–14 keV are performed. The dependence of the sputtering yield on the energy and angle of incidence of the ions are determined and the character of the surface relief formed during the sputtering is investigated. A comparison with theory shows that the best agreement between theory and experiment is achieved when the Haff-Switkowski formula is used together with Yudin’s stopping cross section. It is shown that the surface binding energies obtained differ from the atomization energies by an amount approximately equal to the amorphization energy. Zh. Tekh. Fiz. 67, 113–117 (June 1997)     

Two-dimensional quantum interference contributions to the magnetoresistance of Nd2−x CexCuO4−δ single crystals

Two-dimensional (2D) weak localization effects at low temperatures T=0.2–4.2 K are investigated in a nonsuperconducting sample Nd_1.88Ce_0.12CuO_4−δ and in the normal state of a superconducting sample Nd_1.82Ce_0.18CuO_4−δ for B>B _c2≃3 T. The phase coherence time τφ (≃5×10⁻¹¹ s at 1.9 K) and the effective thickness d of a conducting CuO₂ layer (≃1.5 Å) are estimated by fitting the expressions from the 2D weak localization theory to the magnetoresistivity data for the normal-to-plane and in-plane magnetic fields. The estimated value of the parameter d ensures the condition of strong carrier confinement and justifies a model of almost decoupled 2D metallic sheets for the Nd_2−x Ce_xCuO_4−δ single crystals. Pis’ma Zh. éksp. Teor. Fiz. 70, No. 2, 93–99 (25 July 1999) Published in English in the original Russian journal. Edited by Steve Torstveit.     

Nature of conduction via impurities in uncompensated silicon

The static conductivity σ(E) and photoconductivity (PC) at radiation frequencies ħω=10 and 15 meV in Si doped with shallow impurities (density N=10¹⁶−6×10¹⁶ cm⁻³, ionization energy ε₁≃45 meV) with compensation K=10⁻⁴−10⁻⁵ in electric fields E=10–250 V/cm are measured at liquid-helium temperatures T. Special measures are taken to prevent the high-frequency part of the background radiation (ħω>16 meV) from striking the sample. It is found that the conductivity σ(E) is due to carrier motion along the D ⁻ band, which is filled with carriers under the influence of the field E. In fields E<E _q (E _q ≃100–200 V/cm) the carrier motion consists of hops along localized D ⁻ states in a 10–15 meV energy band below the bottom of the free band (energy ε=ε₁); for E>E _q carriers drift along localized D ⁻ states with energy ε∞ε₁−10 meV. An explanation is proposed for the threshold behavior of the field dependence of the photo-and static conductivities. Pis’ma Zh. éksp. Teor. Fiz. 66, No. 4, 232–236 (25 August 1997)     

The search for antimatter in cosmic rays

The search for antimatter in the universe is a page in the history of the Ioffe Physicotechnical Institute (IPTI). Experiments on spacecraft and high-altitude balloons, begun in the 1960s, yielded information on to the presence or absence of antimatter stars or galaxies according to evidence arising in explosive processes in these objects. Antiprotons with energies of 2–5 GeV in galactic cosmic rays were observed at the end of the 1970s in balloon experiments by the Cosmic Spectrometry Laboratory at the IPTI. These studies were done using a magnetic spectrometer at altitudes with a residual pressure of 10 g/cm² with a threshold geomagnetic rigidity of 3 GV. High-latitude experiments in the 1980s, yielding the first measurements of the flux of galactic antiprotons with energies of 0.2–2 GeV, gave some indication of the mechanism by which they are generated. The measured ratios of the fluxes of antiprotons and protons in the cosmic rays are 2.4 _−1.3 ^+2.4 ×10⁻⁴ and 6 ₋₅ ⁺¹⁴ ×10⁻⁵ at energies of 2–5 and 0.2–2 GeV, respectively. Subsequent balloon-borne experiments employing magnetic spectrometers by groups from the USA and Japan have confirmed the results obtained by the IPTI. Experimental and theoretical work on the search for antiparticles in cosmic rays is summarized and the astrophysical consequences of this research are discussed. Experimental data on the detection of antiparticles in galactic cosmic rays indicate that there are no objects made of antimatter within the local group of galaxies. Zh. Tekh. Fiz. 69, 99–103 (September 1999)     

Longitudinal nuclear spin relaxation in solids in a triply rotating coordinate system: Selective observation of the multispin dipole contribution

The longitudinal nuclear spin relaxation in an effective magnetic field H _e3 acting in a triply rotating coordinate system is recorded. Rotating and doubly rotating coordinate systems are employed for strong suppression of the secular nuclear dipole interactions in the first two orders and for separation of higher-order interactions (four-and five-spin). Experiments on protons in polycrystalline benzene showed that the contribution of such multispin dipole interactions to this relaxation can be observed selectively as a pronounced local minimum in the temperature dependence of the relaxation time. This contribution correponds to ultraslow molecular motions with rates ≃ γH _e3≃2π(10¹−10³) s⁻¹ and can be employed to study such motions in detail, including for purposes of identification of the form of the motion. Pis’ma Zh. éksp. Teor. Fiz. 64, No. 5, 335–340 (10 September 1996)     

Raman scattering in a near-surface n-GaAs layer implanted with boron ions

Structure in the Raman scattering spectra of near-surface n-GaAs layers (n=2×10¹⁸ cm⁻³) implanted with 100 keV B⁺ ions in the dose range 3.1×10¹¹–1.2×10¹⁴ cm⁻² is investigated. The qualitative and quantitative data on the carrier density and mobility and on the degree of amorphization of the crystal lattice and the parameters of the nanocrystalline phase as a result of ion implantation are obtained using a method proposed for analyzing room-temperature Raman spectra. Fiz. Tverd. Tela (St. Petersburg) 41, 1495–1498 (August 1999)     

Spectral characteristics of water clusters in the interaction with ozone molecules and bromide ions

The molecular dynamics method is used to study the interaction of the (Br⁻) _i (H₂O)_{50 − i} clusters in a medium of water vapor with ozone molecules. The clusters absorb O₃ molecules and retain them, along with Br⁻ ions, for a 25-ps-long calculation procedure. The presence of bromide ions results in significant increases in the values of the real and imaginary parts of the relative permittivity. The addition of bromide ions causes a significant increase in the integrated IR radiation absorption intensities and in the radiant power emitted by the clusters. The addition of Br⁻ ions only slightly affects the intensity of the Raman spectra until the number of Br⁻ reaches six, when a dramatic decrease of the integrated intensity of this spectrum occurs. Bromide ions absorbed by water clusters produce a much more lasting impact on the ozone molecules trapped by the cluster than chlorine ions do, all other things being equal.     

Near IR laser light visualizators using nonlinear GaSe and other layered crystallites

Two methods of preparation of the devices for visualization of pulsed and continuous near-IR (near infrared) are described and the results of conversion of pulsed and continuous IR (800–1360 nm) laser radiation into the visible range of spectra (400–680 nm) by using a transparent substrate covered with the particles (including nanoparticles) of effective nonlinear materials of GaSe _x S_{1 − x} (0.2 ≤ x ≤ 0.8) are presented. Converted light can be detected in transmission or reflection geometry as a visible spot corresponding to the real size of the incident laser beam. Developed device structures can be used for checking if the laser is working or not, for optical adjustment, for visualization of distribution of laser radiation over the cross of the beam and for investigation of the content of the laser radiation. Low energy (power density) limit for visualization of the IR laser pulses with 2–3 ps duration for these device structures are: between 4.6–2.1 μJ (3 × 10⁻⁴−1 × 10⁻⁴ W/cm²) at 1200 nm; between 8.4–2.6 μJ (4.7 × 10⁻⁴−1.5 × 10⁻⁴ W/cm²) at 1300 nm; between 14.4–8.1 μJ (8.2 × 10⁻⁴–4.6 × 10⁻⁴ W/cm²) at 1360 nm. Threshold damage density is more than 10 MW/cm² at λ = 1060 nm, pulse duration τ = 35 ps. The results are compared with commercially existing laser light visualizators.     

Entrapment of inert gas ions near molybdenum surface

The thermal desorption spectra of inert gas ions (neon, argon and krypton) injected with various energies (430–1950 eV) into a polycrystalline molybdenum target with various dosages (6.4×10¹²−3.9×10¹⁴ ions/cm²) are reported. At least four different states of binding of the trapped atoms corresponding to the activation energies for desorption have been observed from the spectra. The activation energies are found to be relatively insensitive to the species of the bombarding ion, incident ion energy and the dosage. The shapes of the spectra are strongly influenced by the depth of penetration of the ions into the solid. The activation energies deduced are in good agreement with those reported for the migration of atoms and defects in molybdenum.     

Pseudovector heavy quarkonia in e + e −2 collisions

It is shown that BR(χ _b1(1 P)→e ⁺ e ⁻)≃3.3· 10⁻⁷ and BR(χ _c1(1 P)→e ⁺ e ⁻)≃10⁻⁸. This gives realistic possibilities for searching for the production of χ _b1(1 P) and ξ _c1(1 P) states in e ⁺ e ⁻ collisions, even on the present-day colliders, to say nothing of b and c-τ factories. Pis’ma Zh. éksp. Teor. Fiz. 63, No. 8, 569–574 (25 April 1996)