Non-steady-state photo-EMF in nanostructured GaN and polypyrrole within porous matrices

We report an experimental investigation of the non-steady-state photoelectromotive force in nanostructured GaN within porous glass and polypyrrole within chrysotile asbestos. The samples are illuminated by an oscillating interference pattern created by two coherent light beams and the alternating current is detected as a response of the material. Dependences of the signal amplitude versus temporal and spatial frequencies, light intensity, and temperature are studied for two wavelengths λ=442 and 532 nm. The conductivity of the GaN composite is measured: σ=(1.1–1.6)×10⁻¹⁰ Ω⁻¹ cm⁻¹ (λ=442 nm, I ₀=0.045–0.19 W/cm², T=293 K) and σ=(3.5–4.6)×10⁻¹⁰ Ω⁻¹ cm⁻¹ (λ=532 nm, I ₀=2.3 W/cm², T=249–388 K). The diffusion length of photocarriers in polypyrrole nanowires is also estimated: L _D=0.18 μm.     

Investigation of the turbulent mixing of thin layers of materials of different density during the laser acceleration of flat multilayer targets in the Iskra-4 facility

The results of the first experiments devised to investigate the mixing of thin layers of Al and Au during the laser acceleration of flat three-layer targets of Si (5 μm), Al (2 μm), and Au (0.05–0.26 μm) by radiation converted to the second harmonic from the Iskra-4 iodine laser with an intensity of 4×10¹³−7×10¹³ W/cm² (τ _0.5∼1 ns), which acts on the Si side of the target. A method for detecting the occurrence of mixing is developed. It is established that under the experimental conditions the thickness of the mixing region is at least ∼0.15 μm. The results of a theoretical analysis of the evolution of the disturbances leading to mixing are presented. Zh. éksp. Teor. Fiz. 111, 882–888 (March 1997) Deceased.     

Intracavity Cr4+ :YAG laser absorption analyzed by time-resolved Fourier transform spectroscopy

A high-resolution time-resolved Fourier transform interferometer is combined with a multimode Cr⁴⁺:YAG laser for intracavity laser absorption spectroscopy (ICLAS) experiments. Atmospheric absorption spectra are recorded in the 1.5 μm region with a minimum detectable absorption coefficient equal to 8×10^-11 cm^-1 Hz^-1/2. The broad gain bandwidth of the crystal allows a simultaneous spectral coverage at most equal to 38 nm. The laser tunability covers the 1360–1577 nm range. Water vapor detection domain extends from the 100 ppmv down to the 0.1 ppbv level. PACS 42.62.Fi; 39.30.+w; 07.60.Ly; 33.20.Ea     

Femtosecond laser plasma in CaF<Subscript>2</Subscript> crystal microchannel and effective generation of characteristic X-ray radiation

The dependence of the characteristic X-ray radiation yield from CaF₂ crystal on the formed microchannel depth under highly intensive (I ∼ 3 × 10¹⁵ W/cm²) laser pulses with different contrast was obtained. The maximum of the characteristic X-ray radiation yield at these experimental conditions corresponded to the microchannel depth of 30–50 μm. The efficiency of the laser radiation conversion to the characteristic X-ray radiation increased from 6 × 10⁻⁸ for the surface up to 10⁻⁷ in the microchannel. The dependence of the characteristic X-ray radiation yield on the viewing angle showed that the source of X-ray radiation was located near the surface inside the microchannel.     

Optical absorption in early stage low temperature laser produced plasma

We describe a new technique to measure the UV/visible absorption spectrum of the ablated material during the laser pulse. The technique utilizes the continuum emission from one laser produced plasma as a light source to measure the absorption properties of a second laser produced plasma which is formed on a semi-transparent target with an array of 40 μm holes. A 6 ns, 1064 nm laser was used to ablate a Ag target and the plasma absorption was measured in the range 450–625 nm for a laser fluence of 1 J cm⁻². The total absorption cross-section is (0.5–1.5)×10⁻¹⁷ cm² in the range 450–540 nm. By comparing the measured absorption with a calculation using the plasma spectroscopy code FLYCHK it can be concluded that, in the wavelength region examined here, the absorption is mainly due to bound-bound transitions.     

Enhanced field emission from pulsed laser deposited nanocrystalline ZnO thin films on Re and W

Nanocrystalline ZnO thin films have been deposited on rhenium and tungsten pointed and flat substrates by pulsed laser deposition method. An emission current of 1 nA with an onset voltage of 120 V was observed repeatedly and maximum current density ∼1.3 A/cm² and 9.3 mA/cm² has been drawn from ZnO/Re and ZnO/W pointed emitters at an applied voltage of 12.8 and 14 kV, respectively. In case of planar emitters (ZnO deposited on flat substrates), the onset field required to draw 1 nA emission current is observed to be 0.87 and 1.2 V/μm for ZnO/Re and ZnO/W planar emitters, respectively. The Fowler–Nordheim plots of both the emitters show nonlinear behaviour, typical for a semiconducting field emitter. The field enhancement factor β is estimated to be ∼2.15×10⁵ cm⁻¹ and 2.16×10⁵ cm⁻¹ for pointed and 3.2×10⁴ and 1.74×10⁴ for planar ZnO/Re and ZnO/W emitters, respectively. The high value of β factor suggests that the emission is from the nanometric features of the emitter surface. The emission current–time plots exhibit good stability of emission current over a period of more than three hours. The post field emission surface morphology studies show no significant deterioration of the emitter surface indicating that the ZnO thin film has a very strong adherence to both the substrates and exhibits a remarkable structural stability against high-field-induced mechanical stresses and ion bombardment. The results reveal that PLD offers unprecedented advantages in fabricating the ZnO field emitters for practical applications in field-emission-based electron sources.     

Effect of air pressure on the spatial and emission characteristics of an aluminum laser torch under subthreshold conditions of ablation

The spatial characteristic of an aluminum laser-induced plasma are studied at a laser radiation intensity of (3.8–4.8) × 10⁸ W/cm² and an air residual pressure of 6.7–133.3 Pa. It is found that the duration of the aluminum plasma glow is 50 μs and decreases with decreasing laser power output. The glow intensity reaches a maximum at t = 1.4 μs and rises with laser energy. Typical sizes of the emitting area on the laser torch are determined.     

Spectral components that form UV absorption spectrum of Ce3+ and Ce(IV) valence states in matrix of photothermorefractive glasses

We have measured the UV absorption spectra of photothermorefractive glasses of the system Na₂O-ZnO-Al₂O₃-NaF-SiO₂ doped by cerium oxide in the range of (2.8–5.0) × 10⁴ cm⁻¹ (360–200 nm). The spectra have been processed by the method of dispersion analysis based on the analytical convolution model for the complex dielectric function of glasses. We show that the absorption band centered at 3.3 × 10⁴ cm⁻¹ (∼303 nm) that is attributed to the transition 2F _5/2 → 5d in the Ce³⁺ ion, is an envelope of three spectral components. The broad absorption range (3.5–4.7) × 10⁴ cm⁻¹ (200–270 nm) that is commonly interpreted as a charge transfer band of the Ce(IV) valence state, is an envelope of at least three spectral components.     

Three-dimensional simulation of laser–plasma-based electron acceleration

A sequential three-dimensional (3D) particle-in-cell simulation code PICPSI-3D with a user friendly graphical user interface (GUI) has been developed and used to study the interaction of plasma with ultrahigh intensity laser radiation. A case study of laser–plasma-based electron acceleration has been carried out to assess the performance of this code. Simulations have been performed for a Gaussian laser beam of peak intensity 5 × 10¹⁹ W/cm² propagating through an underdense plasma of uniform density 1 × 10¹⁹ cm^− 3, and for a Gaussian laser beam of peak intensity 1.5 × 10¹⁹ W/cm² propagating through an underdense plasma of uniform density 3.5 × 10¹⁹ cm^− 3. The electron energy spectrum has been evaluated at different time-steps during the propagation of the laser beam. When the plasma density is 1 × 10¹⁹ cm^− 3, simulations show that the electron energy spectrum forms a monoenergetic peak at ~14 MeV, with an energy spread of ±7 MeV. On the other hand, when the plasma density is 3.5 × 10¹⁹ cm^− 3, simulations show that the electron energy spectrum forms a monoenergetic peak at ~23 MeV, with an energy spread of ±7.5 MeV.     

Normal-metal hot-electron bolometer with Andreev reflection from superconductor boundaries

This paper describes the design and experimental testing of a high-sensitivity hot-electron bolometer based a film of normal metal, exploiting the Andreev reflection from superconductor boundaries, and cooled with the help of a superconductor-insulator-normal metal junction. At the measured thermal conductivity, G≈6×10⁻¹² W/K, and a time constant of τ=0.2 μs, and a temperature of 300 mK, the estimated noise-equivalent power NEP=5×10⁻¹⁸ W/Hz^1/2, assuming that temperature fluctuations are the major source of noise. At a temperature of 100 mK, the thermal conductivity drops to G≈7×10⁻¹⁴ W/K, which yields NEP=2×10⁻¹⁹ W/Hz^1/2 at a time constant of τ=5 μs. The microbolometer has been designed to serve as a detector of millimeter and FIR waves in space-based radio telescopes. Zh. éksp. Teor. Fiz. 115, 1085–1092 (March 1999)     

Wavelength modulation and cavity enhanced absorption spectroscopy using ～1.9?μm radiation produced by difference frequency generation with a MgO doped PPLN crystal

We have demonstrated the production of ∼1.9 μm near-infrared radiation by using difference frequency generation within a 5% MgO doped PPLN crystal by coupling ∼735 nm radiation from a tunable external cavity diode laser with relatively high powered 532 nm radiation from both Nd:YVO₃ and Nd:YAG lasers. The radiation produced is of low power, ∼15 μW, and was used in conjunction with the sensitivity enhancing techniques of wavelength modulation spectroscopy (WMS) and cavity enhanced absorption spectroscopy (CEAS). Experiments were carried out on rotationally resolved transitions in the combination bands of NH₃ and CO₂ in the 1.9 μm region. An α _min value of 3.6×10⁻⁶ cm⁻¹ Hz^−1/2 was achieved for WMS measurements on CO₂. A comparable α _min value of 2.2×10⁻⁶ cm⁻¹ Hz^−1/2 was achieved for NH₃ using CEAS. The low NIR power indicates that despite the level of MgO doping quoted for the crystal, under prolonged exposure photorefractive damage has occurred.     

Thin TiO2 grown by metal–organic chemical vapor deposition on (NH4)2S x -treated InP

The electrical characteristics of thin TiO₂ films prepared by metal–organic chemical vapor deposition grown on a p-type InP substrate were studied. For a TiO₂ film of 4.7 nm on InP without and with ammonium sulfide treatment, the leakage currents are 8.8×10⁻² and 1.1×10⁻⁴ A/cm² at +2 V bias and 1.6×10⁻¹ and 8.3×10⁻⁴ A/cm² at −2 V bias. The lower leakage currents of TiO₂ with ammonium sulfide treatment arise from the improvement of interface quality. The dielectric constant and effective oxide charge number density are 33 and 2.5×10¹³ cm², respectively. The lowest mid-gap interface state density is around 7.6×10¹¹ cm⁻² eV⁻¹. The equivalent oxide thickness is 0.52 nm. The breakdown electric field increases with decreasing thickness in the range of 2.5 to 7.6 nm and reaches 9.3 MV/cm at 2.5 nm.     

Improved electrical properties of HfTiO/GeO x N y gate dielectric Ge MOS capacitors by using wet–NO Ge-surface pretreatment

Reactive cosputtering is employed to prepare high-permittivity HfTiO gate dielectric on n-Ge substrate. Effects of Ge-surface pretreatment on the interface and gate leakage properties of the dielectric are investigated. Excellent performances of Al/HfTiO/GeO _x N _y /n-Ge MOS capacitor with wet–NO surface pretreatment have been achieved with a interface-state density of 2.1×10¹¹ eV⁻¹ cm⁻², equivalent oxide charge of −7.67×10¹¹ cm⁻² and gate leakage current density of 4.97×10⁻⁵ A/cm² at V _g =1 V.     

A comparative study of the ionic keV X-ray line emission from plasma produced by the femtosecond,picosecond and nanosecond duration laser pulses

We report here an experimental study of the ionic keV X-ray line emission from magnesium plasma produced by laser pulses of three widely different pulse durations (FWHM) of 45 fs, 25 ps and 3 ns, at a constant laser fluence of ∼1.5 × 10⁴ J cm^− 2. It is observed that the X-ray yield of the resonance lines from the higher ionization states such as H- and He-like ions decreases on decreasing the laser pulse duration, even though the peak laser intensities of 3.5 × 10¹⁷ W cm^− 2 for the 45 fs pulses and 6.2 × 10¹⁴ W cm^− 2 for the 25 ps pulses are much higher than 5 × 10¹² W cm^− 2 for the 3 ns laser pulse. The results were explained in terms of the ionization equilibrium time for different ionization states in the heated plasma. The study can be useful to make optimum choice of the laser pulse duration to produce short pulse intense X-ray line emission from the plasma and to get the knowledge of the degree of ionization in the plasma.     

Fabrication of a nanoparticle TiO<Subscript>2</Subscript> photoelectrochemical cell utilizing a solid polymeric electrolyte of PAN–PC–LiClO<Subscript>4</Subscript>

A nanoparticle TiO₂ solid-state photoelectrochemical cell utilizing as a solid electrolyte of poly(acrylonitrile)–propylene–carbonate–lithium perchlorate (PAN–PC–LiClO₄) has been fabricated. The performance of the device has been tested in the dark and under illumination of 100-mW cm⁻² light. A nanoparticle TiO₂ film was deposited onto indium tin oxide-covered glass substrate by controlled hydrolysis technique assisted with spin-coating technique. The average grain size for the TiO₂ film is 76 nm. LiClO₄ salt was used as a redox couple. The room temperature conductivity of the electrolyte is 4.2 × 10⁻⁴ S cm⁻¹. A graphite electrode was prepared onto a glass slide by electron beam evaporation technique. The device shows the rectification property in the dark and shows the photovoltaic effect under illumination. The best J _sc and V _oc of the device were 2.82 μA cm⁻² and V _oc of 0.58 V, respectively, obtained at the conductivity of 4.2 × 10⁻⁴ S cm⁻¹ and intensity of 100 mW cm⁻². The J _sc was improved by about three times by introducing nanoparticle TiO₂ and by using a solid electrolyte of PAN–PC–LiClO₄ replacing PVC–PC–LiClO₄ in the device. The current transport mechanism of the cell is also presented in this paper.     

Spectroscopic characterization and diode-pumped 910 nm laser of Nd:LiLuF4 crystal

Polarized absorption and fluorescence spectra Nd³⁺-doped LiLuF₄ single crystal were investigated. The peak emission cross section at 905 and 910 nm are 0.97 × 10⁻²⁰ and 0.82 × 10⁻²⁰ cm², respectively. Two samples with different dimensions were tested in the laser experiments. With a laser-diode as the pump source, a maximum 1.17 W laser output at 910 nm has been obtained with a slope efficiency of 16.3% with respect to the pump power.     

Kilohertz high power extracavity KGW yellow raman lasers based on pulse LD side-pumped ceramic Nd: YAG

We report an efficient operation of a kilohertz nanosecond extracavity KGd(WO₄)₂ (KGW) crystal Raman yellow laser, which is pumped by a 532 nm lasers based on pulse laser diode (LD) side-pumped ceramic Nd: YAG, BBO electro-optical Q-switched and LBO crystal extracavity frequency doubling. With the 5 W, 10 ns and 1 kHz output power pumped at 532 nm, we obtained 2.58 W, 7.4 ns, 1 kHz second Stokes Raman laser output at 579.54 nm for 768 cm⁻¹ Raman shift of KGW crystal, corresponding to a conversion efficiency of 51.4%. By changing the KGW crystal orientation, we further obtained 3.18 W, 7.8 ns, 1 kHz Raman pulses at 588.33 nm for 901 cm⁻¹ Raman shift, corresponding to a conversion efficiency of 63.3%. The beam quality factors M² of 579.54 and 588.33 nm were (M _x−579.54² = 5.829, M _y−579.54² = 6.336) and (M _x−588.33² = 6.405, M _y−588.33² = 6.895), respectively.     

Properties of Hg implanted Hg1? x Cd x Te infrared detectors

Experimental performance parameters of Hg implanted Hg_1−x Cd _x Te photovoltaic detectors are analyzed. At 77K, for 8–14 μm band, a comparison is made between performances and theoretical ultimate diffusion limits in low frequency direct detection. Experimental features are well-explained by a model based on the Auger band-to-band process for carrier recombination. Peak detectivities exceeding 10¹¹ cm Hz^1/2W⁻¹, external quantum efficiencies as high as 90%, and zero-bias resistance-area products better than 1 Ω·cm² have been achieved in devices with 12 μm cutoff wavelengths. In the 3–5 μm band performances are far from the diffusion limit. Notwithstanding, at 77K zero-bias resistance-area products are better than 10⁴Ω·cm² and detectivities of the order of 10¹² cm Hz^1/2W⁻¹ were observed at 5 μm. Predominant generation-recombination contribution are present at room temperature in 1–1.3 μm photodiodes whose detectivities, primarily limited by the Johnson noise, at 1.3 μm are higher than 10¹¹ cm Hz^1/2W⁻¹ at 300 K. The high frequency response of the photodiodes is also discussed. Response times as low as 0.5 ns are reached despite some limitations arising from the implanted layer sheet resistance. Work supported by CNR-CISE contract No. 73.01435.     

Spectroscopic properties of Nd<Superscript>3+</Superscript>:CaNb<Subscript>2</Subscript>O<Subscript>6</Subscript> crystal

The absorption spectra, fluorescence spectrum and fluorescence decay curve of Nd³⁺ ions in CaNb₂O₆ crystal were measured at room temperature. The peak absorption cross section was calculated to be 6.202×10⁻²⁰ cm² with a broad FWHM of 7 nm at 808 nm for E//a light polarization. The spectroscopic parameters of Nd³⁺ ions in CaNb₂O₆ crystal have been investigated based on Judd-Ofelt theory. The parameters of the line strengths Ω _t are Ω ₂=5.321×10⁻²⁰ cm²,Ω ₄=1.734×10⁻²⁰ cm²,Ω ₆=2.889×10⁻²⁰ cm². The radiative lifetime, the fluorescence lifetime and the quantum efficiency are 167 μs, 152 μs and 91%, respectively. The fluorescence branch ratios are calculated to be β ₁=36.03%,β ₂=52.29%,β ₃=11.15%,β ₄=0.533%. The emission cross section at 1062 nm is 9.87×10⁻²⁰ cm².     

Influence of Ar, Ne, Xe, and CCl4 impurities on luminescence kinetics of Cd II ions (5s22D5/2-5p2P3/2 transition, λ = 441.6 nm) in He-Cd mixture

The luminescence kinetics of the Cd II ion at a wavelength of 441.6 nm has been studied experi-mentally in a high-pressure He-Cd mixture in the presence of Ar, Ne, Xe, and CCl₄ impurities. Cadmium ions were excited through the bombardment of a cadmium foil heated up to 240°C by a pulsed electron beam with an electron energy of 150 keV, a pulse duration of 3 ns, and a current of 500 A. The constants of collisional quenching of the Cd II 5s ^{2 2} D _5/2 level by Ar, Ne, and Xe atoms and CCl₄ molecules and the integral luminescence quenching constants of this level in the helium medium by these impurity gases have been determined. The constants of collisional quenching appeared to be 8.1 × 10⁻¹² (Ar), 1.2 × 10⁻¹² (Xe), 1.5 × 10⁻¹³ (Ne), and 1.8 × 10⁻¹⁰ cm³/s (CCl₄, for λ = 325 nm), while the integral constants were found to be, respectively, 4.1 × 10⁻¹¹, 3.4 × 10⁻¹¹, 9.5 × 10⁻¹², 1.4 × 10⁻⁹ cm³/s for Ar, Ne, Xe, and CCl₄ at a buffer gas pressure of 1 atm. Original Russian Text ? A.I. Miskevich, Liu Tao, 2009, published in Optika i Spektroskopiya, 2009, Vol. 107, No. 1, pp. 45–49.