Fabrication of nanopatterned germanium surface by laser-induced etching: AFM, Raman and PL studies

Fabrication of the nanopatterned germanium (Ge) surface is done by laser-induced etching. Atomic force microscopy is utilized here to study the surface and sizes of Ge nanoparticles. Raman and photoluminescence (PL) spectroscopy have been used to characterize their vibrational and light emission properties. Wavelength-dependent Raman investigations of these nanopatterned Ge surface reveal spatial distribution of sizes of nanoparticles. Nanopatterned Ge structures (etched for 60 min) emit a broad PL band having two maxima at 2.1 and 2.35 eV.     

Effect of impurity concentration on optical and magnetic properties in ZnS:Cu nanoparticles

To obtain enhanced room temperature ferromagnetism (RTFM) along with the increase in optical bandgap in the compound semiconductors has been an interesting topic. Here, we report RTFM along with increase in energy bandgap in chemically synthesized Zn_1−xCu_xS (0 ≤ x ≤ 0.04) DMS nanoparticles. Structural properties of the synthesized samples studied by X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) show the formation of cubic phase Cu doped ZnS nanoparticles of ~3–5 nm size. An intrinsic weak ferromagnetic behavior was observed in pure ZnS sample (at 300 K) which got increased in Cu doped samples and was understood due to defect induced ferromagnetism. UV–vis measurement showed increase in the energy bandgap with the increase in Cu doping. The PL study suggested the presence of sulfur and zinc vacancies and surface defects which were understood contributing to the intrinsic FM behavior.     

In situ size measurement of Si nanoparticles and formation dynamics after laser ablation

We have developed a technique to detect Si nanoparticles selectively and to measure size in situ. Applying the technique, we have investigated formation process of Si nanoparticles after pulsed laser ablation of Si targets in Ar gas. Time-resolved photoluminescence (PL) spectroscopy revealed that PL only from Si nanoparticles is observed below 2.4 eV while PL from Si nanoparticles as well as defects in SiO₂ is observed above 2.4 eV. Therefore, Si nanoparticles can be detected selectively by excitation light with a photon energy below 2.4 eV. It is found that the onset of the PL from Si nanoparticles is delayed by approximately 0.3 ms from that of the defects and smaller Si nanoparticles. A size can be estimated by a band gap, which is roughly equal to the lowest photon energy at which Si nanoparticles can be excited. Thus, we estimated the sizes of growing Si nanoparticles. PACS 61.46.+w; 78.66.w; 07.60.Yi     

Directing photophysics and structure in semiconductor nanowires with erbium and germanium

Recent efforts from our labs have focused on the fundamental properties of erbium incorporated into Ge nanowires (Ge NWs) and a diverse number of radial core/shell platforms containing these two elements. In this review we focus on two beneficial outcomes that can be exploited from such structures to even broader families of nanostructures: (a) the useful chemical and photophysical utility of providing wide bandgap oxide shells onto germanium nanowire cores containing rare earth ions such as erbium; (b) the unique combination of germanium and tin in an erbium doped oxide nanowire to engage in a spontaneous oxidation–reduction reaction that enhances the erbium near infrared photoluminescence (PL). A broad range of spectroscopic (PL, PL excitation) and structural (high resolution transmission electron microscopy, scanning electron microscopy, Raman spectroscopy, and energy dispersive X-ray analysis) tools are employed for this evaluation.     

ZnO纳米颗粒中的表面态发射特性研究

研究了不同粒径ZnO纳米颗粒样品(17～300nm)的时间光谱,通过对各粒径样品时间积分光谱的谱带结构进行高斯拟合解迭,发现光子能量位于ZnO谱带低能侧的高斯拟合成份Xc3的荧光中心波长随粒径的减小而红移,同时发光带的寿命也随之缩短.基于ZnO谱带低能侧的高斯拟合峰发光带强烈依赖于ZnO样品粒径的谱带特性,提出了与ZnO禁带内的表面态能级有关,同时研究表明,表面态在尺寸降到一定程度的纳米体系中起着重要的作用.     

Calcination Effect on the Photoluminescence,Optical, Structural,and Magnetic Properties of Polyvinyl Alcohol Doped ZnFe2O4 Nanoparticles

Abstract

Spinel ferrite based nanoparticle material has been at the forefront of contemporary nanotechnology for use in various industrial and biomedical applications. The preparation and characterization of zinc ferrite nanoparticles (ZFNPs) doped with polyvinyl alcohol (PVA) are reported in this work. The formulated ZFNP/PVAs were characterized using powder X-ray diffraction (XRD), scanning electron microscopy (SEM), UV-visible spectroscopy, photoluminescence (PL) and a vibrating sample magnetometer (VSM). The XRD established the cubic spinel crystal structure of the as-prepared and calcined sample with an increase in the crystallite size after the calcination. The SEM analysis showed a spherical morphology within the range of 10-40?nm after calcination. The bandgap energy was enhanced after calcination. The PL analysis revealed a prominent peak in the UV band, which showed the characteristics of the formulated nanostructure. Transformation to a superparamagnetic nature was observed after calcination. It is noteworthy that after calcination of the formulated ZFNP/PVAs, the structural, optical, bandgap energy, morphology, photoluminescence and the magnetic properties were influenced and enhanced for various applications, chiefly for hyperthermia, magnetic resonance imaging, drug delivery and allied disciplines.     

On the origin of the 2.2-2.3 eV photoluminescence from chemically etched germanium

The photoluminescence (PL) at ∼2.2-2.3 eV from Ge-based nanocrystalline materials is described in the literature as nanocrystal size-independent. We have observed visible luminescence from two different types of stain-etched Ge samples, one prepared after Sendova-Vassileva et al. (Thin Solid Films 255 (1995) 282) in a solution of H₂O₂:HF at 50:1 volume ratio, and the other in a solution of HF:H₃PO₄:H₂O₂ at 34:17:1 volume ratio. Energy dispersive X-ray analysis (EDX), Raman and FTIR spectroscopy, and the near edge X-ray absorption structure (XANES), indicate that the chemically etched Ge layers of the former type of samples are composed of non-stoichometric Ge oxides, i.e. GeO_x (0<x<2), and free from any Ge nanoconstructions. It is also suggested from XANES that the latter type of chemically etched Ge samples comprise 8-9 nm nanocrystals of Ge, surface-covered with mainly oxygen. Photoluminescence occurred at ∼2.3 eV for all samples. The PL behavior of the latter type of chemically etched Ge on annealing in different chemical environments (air or H) allowed us to conclude that the PL from these materials, as well as that from those Ge-based nanocrystalline materials reported in the literature, is from GeO_xs.     

纳米硅结构薄膜光致发光的温度依赖特性

综合考虑纳米硅结构薄膜的特殊性质,如量子限制效应、光学带隙和光跃迁振子强度对纳米硅粒径的依赖特性以及光学带隙和光辐射的温度依赖特性等,给出了一个解析表达式来分析具有一定粒径分布的纳米硅结构薄膜的光致发光(PL)强度分布,其中选取了两种纳米硅的粒径分布,即高斯分布和对数正态分布。结果表明,随着平均粒径和粒径分布偏差的减小,纳米硅薄膜的PL谱峰蓝移。随着环境温度的升高,纳米硅结构薄膜的PL谱峰红移且相对发光强度减弱。纳米硅结构薄膜光辐射拟合的结果与实验数据的比较分析表明,该模型能够很好地解释纳米硅结构薄膜在不同温度下的PL特性。     

Nanoparticle-modified metal-oxide-silicon structure enhancing silicon band-edge electroluminescence to near-lasing action

With the insertion of SiO(2) nanoparticles in the oxide layer, near-lasing actions such as threshold behavior and resonance modes are observed at the Si bandgap energy of metal-oxide-silicon (MOS) structure. The threshold current is ~12 mA . The SiO(2) nanoparticles cause simultaneous localization of electrons and holes to enhance phonon-assisted radiative recombination. Electroluminescence at Si bandgap energy is increased to orders of magnitude larger than in similar MOS structures without SiO(2) nanoparticles. The efficient light emission at the Si bandgap energy indicates that a direct bandgap nature is not necessarily the basic requirement for radiative recombination.     

Synthesis of Light-emitting Silicon Nanoparticles by Intense Pulsed ion-beam Esvaporation

Synthesis of photoluminescent Si nanoparticles has been successfully prepared using an intense pulsed ion-beam evaporation (IBE) technique in vacuum. Si nanoparticles are produced by the IBE method without any post-annealings. Photoluminescence (PL) mainly in blue range with a peak of 455 nm and a shoulder near 510 nm is observed in as-deposited Si nanoparticles at room temperature. The blue light emission is relatively stable with no noticeable change, as the samples have already stored in air more than 4 months. The observed PL does not fit the quantum confinement model, since a majority of particle size is around ~20 nm, estimated by SEM and XRD measurements. Moreover, hydrofluoric acid (HF) corrosion tests on the Si nanoparticles also indicate a correlation between the presence of the surface oxide layers and the PL. Oxide-related luminescence is likely the source of this blue light emission.     

飞秒脉冲激光辐照下硅表面光致荧光特性(英文)

采用钛宝石飞秒脉冲激光对单晶硅在空气中进行辐照,研究了硅表面在不同扫描速度和能量密度下的光致荧光特性。光致荧光谱(PL)测量表明,在样品没有退火处理的情况下,激光扫描区域观察到橙色荧光峰(603nm)和红色荧光带(680nm附近)。扫描电子显微镜(SEM)测量显示,在飞秒脉冲激光辐照硅样品的过程中硅表面沉积了大量的纳米颗粒。利用傅里叶变换红外光谱仪(FT-IR)检测到了低值氧化物SiOx(x2)的存在,并且结合能谱仪(EDS)检测结果发现氧元素在光致发光中起着重要作用。研究表明:603nm处橙色荧光峰来自微构造硅表面低值氧化物SiOx,680nm附近红色荧光带来自量子限制效应。同时样品表面硅纳米颗粒的尺寸和氧元素的浓度分别决定了红色荧光带和橙色荧光的强度,通过调节飞秒激光脉冲的扫描速度和能量密度,可以有效地控制样品的荧光强度。     

利用Cd(OH)_2选择性包覆与光分解腐蚀缩小CdS纳米微粒的尺寸分布的研究

提出结合Ｃｄ（ＯＨ）２ 选择性包覆与光分解腐蚀法缩小ＣｄＳ纳米微粒的尺寸分布, 并通过对ＣｄＳ纳米微粒发射光谱的研究证实了这一设计思想． 以多聚磷酸钠（ＨＭＰ）为稳定剂合成ＣｄＳ纳米微粒, 再通过Ｃｄ２＋ 与ＯＨ－ 的选择性包覆在大粒径的ＣｄＳ纳米微粒表面形成一层Ｃｄ（ＯＨ）２, 然后溶液置于日光下辐照处理, 数天后, 未经包覆的小粒径ＣｄＳ纳米微粒被日光腐蚀分解, 溶液中只剩下被Ｃｄ（ＯＨ）２ 包覆的大粒径ＣｄＳ纳米微粒, 这样即可达到缩小ＣｄＳ纳米微粒尺寸分布的目的．     

Si基IV族异质结构发光器件的研究进展

Si基光互连具有高速度、高带宽、低功耗、可集成等特点, 有望解决集成电路的集成度在日益提高时电互连带来的问题. 在Si基光互连的关键器件中, 除了Si基光源尚未得到解决, 其他器件都已经实现, 因此Si基可集成高效光源具有十分重要的研究意义. 同为IV族元素的Ge 和GeSn因其与Si的可集成性及其独特的能带结构有望成为Si基光电集成回路中的光源. 虽然Ge是间接带隙材料, 但通过引入张应变、n型重掺杂, 或者引入Sn形成GeSn合金等能带工程手段来提高发光效率. 近年来, Si 基IV族发光材料和发光器件有许多重要进展, 本文就Si基Ge, GeSn材料发光研究中的几个关键技术节点——应变工程、掺杂技术、理论模型和器件研究——回顾了近几年国际和国内的研究进展, 并展望了Si基IV族激光器的发展趋势.     

Photoluminescent properties of silicon carbide and porous silicon carbide after annealing

Photoluminescent (PL) p-type 6H porous silicon carbides (PSCs), which showed a strong blue-green photoluminescence band centered at approximately 490 nm, were annealed in Ar and vacuum conditions. The morphological, optical, and chemical states after annealing are reported on electrochemically etched SiC semiconductors.The thermal treatments in the Ar and vacuum environments showed different trends in the PL spectra of the PSC. In particular, in the case of annealing in a vacuum, the PL spectra showed both a weak red PL peak near 630 nm and a relatively intense PL peak at around 430 nm in the violet region. SEM images showed that the etched surface had spherical nanostructures, mesostructures, and islands. With increasing annealing temperature it changes all spherical nanostructures. The average pore size observed at the surface of the PSC before annealing was of the order of approximately 10 nm.In order to investigate the surface of a series of samples in detail, both the detection of a particular chemical species and the electronic environments at the surface are examined using X-ray photoelectron spectroscopy (XPS). The chemical states from each XPS spectrum depend differently before and after annealing the surface at various temperatures. From these results, the PL spectra could be attributed not only to the quantum size effects but also to the oxide state.     

Highly Luminescent Material Based on Alq3:Ag Nanoparticles

Tris (8-hydroxyquinoline) aluminum (Alq₃) is an organic semiconductor molecule, widely used as an electron transport layer, light emitting layer in organic light-emitting diodes and a host for fluorescent and phosphorescent dyes. In this work thin films of pure and silver (Ag), cupper (Cu), terbium (Tb) doped Alq₃ nanoparticles were synthesized using the physical vapor condensation method. They were fabricated on glass substrates and characterized by X-ray diffraction, scanning electron microscope (SEM), energy dispersive spectroscopy, atomic force microscope (AFM), UV-visible absorption spectra and studied for their photoluminescence (PL) properties. SEM and AFM results show spherical nanoparticles with size around 70–80 nm. These nanoparticles have almost equal sizes and a homogeneous size distribution. The maximum absorption of Alq₃ nanoparticles is observed at 300 nm, while the surface plasmon resonant band of Ag doped sample appears at 450 nm. The PL emission spectra of Tb, Cu and Ag doped Alq₃ nanoparticles show a single broad band at around 515 nm, which is similar to that of the pure one, but with enhanced PL intensity. The sample doped with Ag at a concentration ratio of Alq₃:Ag?=?1:0.8 is found to have the highest PL intensity, which is around 2 times stronger than that of the pure one. This enhancement could be attributed to the surface plasmon resonance of Ag ions that might have increased the absorption and then the quantum yield. These remarkable result suggest that Alq₃ nanoparticles incorporated with Ag ions might be quite useful for future nano-optoelectronic devices.     

Structural and optical features of nanoporous silicon prepared by electrochemical anodic etching

Nanoporous silicon (NPS) samples were prepared by electrochemical anodic etching of p-type (0 0 1) silicon wafers in HF solution, and some of them were aged in air. The nanostructural, optical and chemical features of the NPS were investigated in terms of etching and aging conditions. The surface of the porous Si exhibits an etched layer with a thickness of 30–40 nm; this layer appears to consist of aggregates of 5–10 nm size nano-crystallites. The NPS exhibited broad photoluminescence (PL) spectra with its peak in the red light region (740 nm). After aging the porous samples for 4 weeks in air, we observed the PL intensity became approximately a fifth of that of the as-prepared one, along with a blue shift. It is very likely that the blue shift of the PL peak was caused by the shrinkage of the Si nano-crystallites due to the oxidation in the surface of the nano-crystallites.     

Structural investigations of Ge nanoparticles embedded in an amorphous SiO2 matrix

Transmission electron microscopy and X-ray photoelectron spectroscopy analyses are performed to investigate Ge nanoparticles embedded in an amorphous SiO₂ matrix. GeSiO thin films are prepared by two methods, sol?Cgel and radio frequency magnetron sputtering. After the deposition, the sol?Cgel films are annealed in either N₂ (at 1 atm and 800 °C) or H₂ (at 2 atm and 500 °C), and the sputtered films in H₂ (at 2 atm and 500 °C), to allow Ge segregation. Amorphous Ge-rich nanoparticles (3?C7 nm size) are observed in sol?Cgel films. Crystalline Ge nanoparticles in the high pressure tetragonal phase (10?C50 nm size) are identified in the sputtered films. The size of the nanoparticles increases with Ge concentration in the volume of the film. At the film surface, the Ge concentration is much larger that in the volume for both sol?Cgel and sputtered films. At the same time, at the film surface, only oxidized Ge is observed.     

Excitonic photoluminescence characteristics of amorphous silicon nanoparticles embedded in silicon nitride film

We have investigated the photoluminescence (PL) properties of amorphous silicon nanoparticles (a-Si NPs) embedded in silicon nitride film (Si-in-SiN_x) grown by helicon wave plasma-enhanced chemical vapor deposition (HWP-CVD) technique. The PL spectrum of the film exhibits a broad band constituted of two Gaussian components. From photoluminescence excitation (PLE) measurements, it is elucidated that the two PL bands are associated with the a-Si NPs and the silicon nitride matrix surrounding a-Si NPs, respectively. The existence of Stokes shift between PL and absorption edge indicates that radiative recombination of carriers occurs in the states at the surface of the Si NPs, whereas their generation takes place in the a-Si NPs cores and the silicon nitride matrix, respectively. The visible PL of the film originates from the radiative recombination of excitons trapped in the surface states. At decreasing excitation energy (E_ex), the PL peak energy was found to be redshifted, accompanied by a narrowing of the bandwidth. These results are explained by surface exciton recombination model taking into account there existing a size distribution of a-Si NPs in the silicon nitride matrix.     

Surface luminescence in ZnO nanoparticles

Spectral and time-resolved photoluminescence (TRPL) measurements were performed on ZnO nanoparticles of different sizes (17-300 nm). Under a low photon energy excitation of 2.33 eV, the time-integrated PL spectra (TIPL) clearly exhibit broad emission in the range of 1.2-2.3 eV. Upon increase of the particle size, a red-shift in the PL peak position was observed. Gaussian analysis indicates that this red-shift corresponds to the increased relative magnitude of the Gaussian combination in the low energy region. In addition, TRPL demonstrates a clear relationship between the particle diameters and the PL decay times. The shortening of the PL lifetime could be explained by a surface states model.     

Photoluminescence of Ge nanostructures grown by gas source molecular beam epitaxy on silicon (1 1 8) surface

In this paper, we present a photoluminescence (PL) study of Si/Ge/SiGe/Si structures grown by gas source molecular beam epitaxy on an (1 1 8) undulated surface with various Ge coverage. Nucleation and growth of Ge films is obtained by the Stranski–Krastanov mechanism. The influence of the substrate orientation on the changeover 2D–3D growth mode is investigated. Furthermore, we show the use of growing an SiGe wetting layer to control the uniformity of the Ge island size. The PL signal related to the Ge islands is found to be highly dependent of the power excitation and is observed up to room temperature.