Effect of oxygen partial pressure on the structure and properties of Cu–Al–O thin films

We have studied the electrical and optical properties of Cu–Al–O films deposited on silicon and quartz substrates by using radio frequency (RF) magnetron sputtering method under varied oxygen partial pressure P_O. The results indicate that P_O plays a critical role in the final phase constitution and microstructure of the films, and thus affects the electrical resistivity and optical transmittance significantly. The electrical resistivity increases with the increase of P_O from 2.4 × 10^?4 mbar to 7.5 × 10^?4 mbar and afterwards it decreases with further increasing P_O up to 1.7 × 10^?3 mbar. The optical transmittance in visible region increases with the increase of P_O and obtains the maximum of 65% when P_O is 1.7 × 10^?3 mbar. The corresponding direct band gap is 3.45 eV.     

100 MeV Si8+ ion induced luminescence and thermoluminescence of nanocrystalline Mg2SiO4:Eu3+

Nanoparticles of Mg₂SiO₄:Eu³⁺ have been prepared by the solution combustion technique and the grain size estimated by PXRD is found to be in the range 40–50 nm. Ionoluminescence (IL) studies of Mg₂SiO₄:Eu³⁺ pellets bombarded with 100 MeV Si⁸⁺ ions with fluences in the range 1.124–22.48×10¹² ions cm^?2 are carried out at IUAC, New Delhi, India. Five prominent IL bands with peaks at 580 nm, 590 nm, 612 nm, 655 nm and 705 nm are recorded. These characteristic emissions are attributed to the luminescence centers activated by Eu³⁺ cations. It is found that IL intensity decreases rapidly in the beginning. Later on, the intensity decreases slowly with further increase of ion fluence. The reduction in the ionoluminescence intensity with increase of ion fluence might be attributed to degradation of Si–O (ν₃) and Si–O (2ν₃) bonds present on the surface of the sample. The red emission with peak at 612 nm is due to characteristic emission of ⁵D₀→⁷F₂ of the Eu³⁺ cations. Thermoluminescence (TL) studies of Mg₂SiO₄:Eu³⁺ pellets bombarded with 100 MeV Si⁸⁺ cations with fluences in the range 5×10¹¹ ions cm^?2 to 5×10¹³ ions cm^?2 are made at RT. Two prominent and well resolved TL glows with peaks at ～220 °C and ～370 °C are observed. It is observed that TL intensity increases with increase of ion fluence. This might be due to creation of new traps during swift heavy ion irradiation.     

Ferromagnetism in Zn1−xCrxTe (x = 0.05, 0.15) films grown on GaAs(1 0 0) substrate

Zn_1−xCr_xTe (x = 0.05, 0.15) films were grown on GaAs(1 0 0) substrate by thermal evaporation method. X-ray diffraction analysis showed the presence of ZnCrTe phase without any secondary phase. The surface was analyzed by high resolution magnetic force microscope and profile measurements showed orientation of magnetic domains in the range of 0.5–2 nm with increase of Cr content. Magnetic moment–magnetic field measurements showed a characteristic hysteresis loop even at room temperature. The Curie temperature was estimated to be greater than 300 K. From the electron spin resonance spectra, the valence state of Cr in ZnTe was found to be +2 with d² electronic configuration. Hall effect study was done at room temperature and the result showed the presence of p-type charge carriers and hole concentration was found to increase from 5.95 × 10¹² to 6.7 × 10¹² m⁻³ when Cr content increases. We deduce the origin of ferromagnetic behavior based on the observed experimental results.     

Effect of temperature on the current–voltage characteristics of GaAs/AlGaAs quantum cascade photodetectors

Transport of electrons within a quantum cascade photodetector structure takes place with the help of the scattering of electrons by phonons. By calculating scattering rates of the electrons mediated by longitudinal optical phonons (the dominant scattering mechanism), current–voltage characteristic of a quantum cascade photodetector is calculated. The results indicate that with the increase of bias voltage dark current increases rapidly, then the increase becomes slow at higher voltages, whilst photocurrent remains approximately constant with only slight variations in its magnitude. With the increase of temperature from 80 K to 160 K dark current increases by about two orders of magnitude while photocurrent varies slightly, so that at the illuminating power of 1 mW/m² photocurrent density increases in mean from 1.10×10⁻⁹ A/cm² at 80 K to 1.14×10⁻⁹ A/cm² at 160 K and then decreases to 1.03×10⁻⁹ A/cm² at 240 K. Thus the responsivity of the detector varies only slightly with temperature. However owing to the decrease in the resistivity of the photodetector with the increase of temperature, Johnson noise limited detectivity decreases considerably.     

Ionic and electronic conductivity of nitrogen-doped YSZ single crystals

The ionic and electronic charge transport was studied for single crystals of 9.5 mol% yttria-stabilized zirconia with additional nitrogen doping (YSZ:N) of up to 7.5 at.% (referred to the anion sublattice and formula unit Zr_0.83Y_0.17O_1.91) as a function of temperature and nitrogen content. The total conductivity being almost equivalent to the oxygen ion conductivity has been measured by AC impedance spectroscopy under vacuum conditions in order to prevent re-oxidation and loss of nitrogen. The electronic conductivity has been determined by Hebb–Wagner polarization using ion-blocking Pt microelectrodes in N₂ atmosphere. The ionic conductivity of YSZ:N decreases in the presence of nitrogen at intermediate temperatures up to 1000 °C. The mean activation energy of ionic conduction strongly increases with increasing nitrogen content, from 1.0 eV for nitrogen-free YSZ up to 1.9 eV for YSZ containing 7.3 at.% N. Compared to nitrogen-free YSZ, the electronic conductivity first decreases at nitrogen contents of 2.17 and 5.80 at.%, but then increases again for a sample with 7.53 at.%. At temperatures of 850 °C and above, the presence of the N^3? dopant fixes the electrode potential and thus the oxygen partial pressure at the Pt electrode to very low values. This corresponds to a pinning of the Fermi level at a relatively high energy in the upper half of the band gap. At 7.53 at.% N and 950 °C, the oxygen partial pressure in YSZ:N corresponds to p_O2 = 3 × 10^? 18 bar. At temperatures above 850 °C, even in the presence of a very small oxygen concentration in the surrounding gas phase, the nitrogen ion dopant becomes highly mobile and thus diffuses to the surface where it is oxidized to gaseous N₂. The results are discussed in terms of the ionic and electronic defect structures and the defect mobilities in YSZ:N.     

Modifications in physical,optical and electrical properties of tin oxide by swift heavy Au8+ ion bombardment

Tin oxide thin films were deposited by a novel technique called as modified-SILAR. The preparative parameters were optimized to obtain good quality thin films. As-deposited films were annealed in O₂ atmosphere for 1 h at 500 °C. The annealed films were irradiated using Au⁸⁺ ions with energy of 100 MeV at different fluencies of 1 × 10¹¹, 1 × 10¹², 5 × 10¹² and 1 × 10¹³ ions/cm² using tandem pelletron accelerator. The irradiation-induced modifications in tin oxide thin films were studied using XRD, AFM, optical band gap, photoluminescence and I–V measurements. XRD studies showed formation of tin oxide with tetragonal structure. AFM revealed uniform deposition of the material with increase in grain size after irradiation. Decrease in band gap from 3.51 eV to 2.82 eV was seen with increases in fluency. A decrease in PL intensity, and an additional peak was observed after irradiation. I–V measurements showed a decrease in resistance with fluency.     

Preparation and photocatalytic degradation of erbium doped titanium dioxide nanorods

Photocatalytic degradation of methylene blue (MB) in water was examined using Er³⁺-doped TiO₂ (Er–TiO₂) nanorods prepared by a sol–gel derived electrospinning, calcination, and subsequent mechanical grinding. Different concentrations of Er dopant in the range of 0–1.0 mol% were synthesized to evaluate the effect of Er content on the photocatalytic activity of TiO₂. Among Er³⁺–TiO₂ catalysts, the 0.7 mol% Er³⁺–TiO₂ catalyst showed the highest MB degradation rate. The degradation kinetic constant (k) increased from 1.0 × 10^?3 min^?1 to 5.1 × 10^?3 min^?1 with the increase of Er³⁺ doping from 0 to 0.7 mol%, but decreased down to 2.1 × 10^?3 min^?1 when Er³⁺ content was 1.0 mol%. It can be concluded that the degradation of MB under UV radiation was more efficient with Er³⁺–TiO₂ catalyst than with pure TiO₂. The higher activity might be attributed to the transition of 4f electrons of Er³⁺ and red shifts of the optical absorption edge of TiO₂ by erbium ion doping.     

Thermo,Iono and photoluminescence properties of 100 MeV Si7+ ions bombarded CaSiO3:Eu3+ nanophosphor

This paper reports on the thermo (TL), iono (IL) and photoluminescence (PL) properties of nanocrystalline CaSiO₃:Eu³⁺ (1–5 mol %) bombarded with 100 MeV Si⁷⁺ ions for the first time. The effect of different dopant concentrations and influence of ion fluence has been discussed. The characteristic emission peaks ⁵D₀→⁷F_J (J=0, 1, 2, 3, 4) of Eu³⁺ ions was recorded in both PL (1×10¹¹–1×10¹³ ions cm^?2) and IL (4.16×10¹²–6.77×10¹² ions cm^?2) spectra. It is observed that PL intensity increases with ion fluence, whereas in IL the peaks intensity increases up to fluence 5.20×10¹² ions cm^?2, then it decreases. A well resolved TL glow peak at ～304 °C was recorded in all the ion bombarded samples at a warming rate of 5 °C s^?1. The TL intensity is found to be maximum at 5 mol% Eu³⁺ concentration. Further, TL intensity increases sub linearly with shifting of glow peak towards lower temperature with ion fluence.     

Synthesis of ammonia at atmospheric pressure with Ce0.8M0.2O2−δ (M = La,Y, Gd,Sm) and their proton conduction at intermediate temperature

Ionic conduction in fluorite-type structure oxide ceramics Ce_0.8M_0.2O_2−δ (M = La, Y, Gd, Sm) at temperature 400–800 °C was systematically studied under wet hydrogen/dry nitrogen atmosphere. On the sintered complex oxides as solid electrolyte, ammonia was synthesized from nitrogen and hydrogen at atmospheric pressure in the solid states proton conducting cell reactor by electrochemical methods, which directly evidenced the protonic conduction in those oxides at intermediate temperature. The rate of evolution of ammonia in Ce_0.8M_0.2O_2−δ (M = La, Y, Gd, Sm) is up to 7.2 × 10^− 9, 7.5 × 10^− 9, 7.7 × 10^− 9, 8.2 × 10^− 9 mol s^− 1 cm^− 2, respectively.     

Conductivity and dielectric relaxation phenomena in (NH4)2SO4 single crystal

AC impedance measurements have been carried out on (NH₄)₂SO₄ single crystals for the temperatures from 300 to 473 K and frequency range between 100 Hz and 4 MHz. The results reveal two distinct relaxation processes in the sample crystal. One is the dipolar relaxation with a peak at frequency slightly higher than 4 × 10⁶ Hz. The other is the charge carrier relaxation at lower frequencies. The frequency dependence of conductivity is described by the relation σ(ω) = Bωⁿ, and n = 1.32 is obtained at temperatures below 413 K. This value drops to 0.2 and then decreases slightly with increasing temperature. The dipolar response of the (NH₄)₂SO₄ single crystal under an ac field is attributed to the reorientation of dipoles. The contribution of charge carriers is increasing substantially with increasing temperature at temperatures above 413 K. The temperature variation of conductivity relaxation peaks follows the Arrhenius relation. The obtained activation energy for migration of the mobile ions for (NH₄)₂SO₄ single crystal was 1.24 eV in the temperature range between 433 and 468 K in this intrinsic region. It is proposed that the NH₄⁺ in the sample crystal has the contribution to the electrical conduction.     

Dielectric relaxation in NH4HSO4 above room temperature

The dispersion curves of the dielectric response of NH₄HSO₄ show that the corrected imaginary part of permittivity, εʺ, and its real part ε′ versus frequency reveal a dielectric relaxation around 9.1 × 10⁵ Hz at 31 °C, which shifts to higher frequencies (∼ 10⁶ Hz) as the temperatures increases. The relaxation frequency shows an activated relaxation process over the temperature range 31–83 °C with activation energy E_a = 0.14 eV, which is close to that derived from the dc conductivity. We suggest that the observed dielectric relaxation could be produced by the H⁺ jump and SO₄⁻ reorientation that cause distortion and change the local lattice polarizability inducing dipoles like HSO₄⁻.     

Effect of Ag addition on the third-order nonlinearity and physicochemical property of chalcohalide glass

In this work, the 70GeS₂–20In₂S₃–10CsI glass introduced with 0–10 mol% Ag₂S were prepared by the vacuumed melt-quenching technique. The physicochemical properties, such as glass transition temperature, density, refractive index, transmittance, hardness as well as third-order nonlinearity are investigated with the increasing Ag₂S contents. It was found that the refractive index (@632.8 nm), density, and hardness of glasses increase distinctly from 2.204 to 2.270, from 3.520 to 3.675 g cm⁻³ and from 180.9 to 227.9 kg mm⁻², respectively. Meanwhile, the nonlinear refractive index increases from 3.2 × 10⁻¹⁸ to 4.6 × 10⁻¹⁸ m²/W due to the increased refractive index. Finally, the Raman spectra are performed to structurally illustrate the role of Ag addition on the changes of the physicochemical properties. With the Ag₂S contents increasing, the vibration intensity of the [InS₄] and [InS₃I] tetrahedrons increases and the heavy Ag atoms result in the increased density and refractive index, as well as the nonlinear refractive index. The Ag-containing glass, which exhibited good thermal stability, excellent infrared transparency and ultrafast nonlinear optical properties, can be find applications for the IR window material or ultrafast infrared optics.     

Interfacial energies of carbon tetrabromide

The equilibrated grain boundary groove shapes for solid carbon tetrabromide (CTB) in equilibrium with its melt were directly observed by using a horizontal temperature gradient stage. From the observed grain boundary groove shapes, Gibbs–Thomson coefficient (Γ) and solid–liquid interfacial energy (σ_SL) and grain boundary energy (σ_gb) of CTB have been determined to be (7.88 ± 0.8) × 10⁻⁸ K m, (6.91 ± 1.04) × 10⁻³ J m⁻² and (13.43 ± 2.28) × 10⁻³ J m⁻², respectively. The ratio of thermal conductivity of equilibrated liquid phase to solid phase for CTB has also been measured to be 0.90 at its melting temperature. The value of σ_SL for CTB obtained in present work was compared with the values of σ_SL determined in the previous works for same material and it was seen that the present result is in good agreement with previous works.     

Luminescence and defect studies of YAlO3:Dy3+, Sm3+ single crystals exposed to 100 MeV Si7+ ion beam

Ionoluminescence (IL) and photoluminescence (PL) spectra for different rare earth ions (Sm³⁺ and Dy³⁺) activated YAlO₃ single crystals have been induced with 100 MeV Si⁷⁺ ions with fluence of 7.81×10¹² ions cm^?2. Prominent IL and PL emission peaks in the range 550–725 nm in Sm³⁺ and 482–574 nm in Dy³⁺ were recorded. Variation of IL intensity in Dy³⁺ doped YAlO₃ single crystals was studied in the fluence range 7.81×10¹²–11.71×10¹² ions cm^?2. IL intensity is found to be high in lower ion fluences and it decreases with increase in ion fluence due to thermal quenching as a result of an increase in the sample temperature caused by ion beam irradiation. Thermoluminescence (TL) spectra were recorded for fluence of 5.2×10¹² ions cm^?2 on pure and doped crystals at a warming rate of 5 °C s^?1 at room temperature. Pure crystals show two glow peaks at 232 (Tg₁) and 328 °C (Tg₂). However, in Sm³⁺ doped crystals three glow peaks at 278 (Tg₁), 332 (Tg₂) and 384 °C (Tg₃) and two glow peaks at 278 (Tg₁) and 331 °C (Tg₂) in Dy³⁺ was recorded. The kinetic parameters (E, b s) were estimated using glow peak shape method. The decay of IL intensity was explained by excitation spike model.     

A highly luminescent complexes of Eu(III) and Tb(III) with norfloxacin and gatifloxacin doped in sol–gel matrix: A comparable approach of using silica doped Tb(III) and Eu(III) as optical sensor

Highly luminescent complexes of Eu and Tb ions with norfloxacin (NFLX) and gatifloxacin (GFLX) were prepared in sol–gel matrix. The red and green emissions of Eu and Tb ions were obtained by the energy transfer from the triplet state of (NFLX) and (GFLX) to the excited emitting states (⁵D₀ and ⁵D₄) of Eu and Tb, respectively. The intensity of the electric field emission bands (⁵D₀→⁷F₂, 617 nm and ⁵D₄→⁷F₅, 545 nm) of Eu and Tb ions were proportional to the concentration of (NFLX at pH 6.0) and (GFLX at pH 3.5) in acetonitrile with excitation wavelengths (λ_ex) (340 and 395) and (370 and 350 nm) for Eu and Tb ions, respectively. The monitored luminescence intensity of the system showed a good linear relationship with the concentration of NFLX within a range of 5×10^?9–5.8×10^?6 and 5×10^?8–1.0×10^?6 mol L^?1 with a correlation coefficient of 0.990, and for GFLX within a range of 2.4×10^?9–3.2×10^?5 and 5×10^?8–8.0×10^?6 mol L^?1 with a correlation coefficient of 0.995. The detection limit (LOD) was determined as 3.0×10^?9 and 1.0×10^?8 mol L^?1 for NFLX and 1.6×10^?10 and 2.0×10^?8mol L^?1 for GFLX. The limit of quantification (LOQ) is 9×10^?9 and 3.0×10^?8 and 4.8×10^?10 and 6.0×10^?8 in case of Eu and Tb, respectively.     

Structural and optical properties of La-doped BaSnO3 thin films grown by PLD

In this study the structural and optical properties of lanthanum-doped BaSnO₃ powder samples and thin films deposited on fused silica were investigaed using laser ablation. Under an oxygen pressure of 5×10⁻⁴ mbar, phase pure BaSnO₃ films with a lattice constant of 0.417 nm and grain size of 21 nm were prepared at 630 °C. The band gap of BaSnO3 powder sample and thin films was calculated to be 3.36 eV and 3.67 eV, respectively. There was a progressive increase in conductivity for thin films of BaSnO₃ doped with 0~7 at% of La. The highest conductivity, 9 Scm⁻¹, was obtained for 7 at% La-doped BaSnO₃. Carrier concentration, obtained from Burstein-Moss (B-M) shift, nearly matches the measured values except for 3 at% and 10 at% La-doped BaSnO₃ thin films.     

Modifications of structural,optical and electrical properties of nanocrystalline bismuth sulphide by using swift heavy ions

Modified chemical bath deposited (MCBD) bismuth sulphide (Bi₂S₃) thin films’ structural, optical and electrical properties are engineered separately by annealing in air for 1 h at 300 °C and irradiating with 100 MeV Au swift heavy ions (SHI) at 5 × 10¹² ions/cm² fluence. It is observed that the band gap of the films gets red shifted after annealing and irradiation from pristine (as deposited) films. In addition, there is an increase in the grain size of the films due to both annealing and irradiation, leading to the decrease in resistivity and increase in thermoemf of the films. These results were explained in the light of thermal spike model.     

Effect of film thickness on the transport properties of MgB2 synthesized by spray pyrolysis

Polycrystalline MgB₂ films of different thickness have been prepared by employing spray pyrolysis technique on MgO (1 0 0) substrate. The MgB₂ and other phases have been confirmed using X-ray diffraction technique and no trace of impurities phases have been found. The resistivity behavior shows that the superconducting transition temperature lies in the range of 37–39 K with narrow transition width. The transport critical current density vary with films thickness and achieved highest value ～1.2 × 10⁶ A/cm² at 20 K for 2.0 μm thick film and its values increase as thickness increases.