Effect of Sm doping into CuInTe_2 on cohesive energy before and after light absorption

The effects of Sm doping into CuInTe_2 chalcopyrite on the cohesive energy before and after light absorption are systematically investigated by the empirical electron theory(EET) of solids and molecules.The results show that the static energy of CuIn_(1-x)Sm_xTe_2 decreases with Sm content increasing due to the valence electronic structure modulated by doping Sm into CuIn_(1-x)Sm_xTe_2.The calculated optical absorption transition energy from the static state to the excited energy level in CuIn_(1-x)Sm_xTe_2 accords well with the experimental absorption bandgap of CuIn_(1-x)Sm_xTe_2.Moreover,it is found that the energy bandgap of CuIn_(1-x)Sm_xTe_2 is significantly widened with Sm content increasing due to its special valent electron structure,which is favorable for enhancing the light absorption in a wider range and also for the potential applications in solar cells.     

Structural and Electrical Properties of Be_xZn_(1-x)O Alloys under High Pressure

We conduct extensive research into the structures of Be_xZn_1-xOO ternary alloys in a pressure range of 0-60GPa,using the ab initio total energy evolutionary algorithm and total energy calculations,finding several metastable structures.Our pressure-composition phase diagram is constructed using the enthalpy results.In addition,we calculate the electronic structures of the Be_xZn_1-xOO structures and investigate the bandgap values at varying pressures and Be content.The calculated results show that the bandgap of the Be_xZn_1-xOO ternary alloys increases with an increase in Be content at the same pressure.Moreover,the bandgap of the Be_xZn_1-xOO ternary alloys increases with the increasing pressure with fixed Be content.At the same Be content,the formation enthalpy of the Be_xZn_1-xOO ternary alloys first decreases,then increases with the increasing pressure.     

应变Si1-xGex能带结构研究

采用结合形变势理论的K.P微扰法建立了（001）,（101）和（111）面弛豫Si衬底上生长的应变Si_1-xGe_x（x≤0.5）的能带结构模型,获得了其导带带边能级、价带带边能级、导带劈裂能、价带劈裂能及禁带宽度随Ge组分（x）的函数变化关系,该量化数据对器件研究设计可提供有价值的参考． 关键词： 1-xGe_x')" href="#">应变Si_1-xGe_x K.P 法 能带结构     

金刚石紫外发光器件研究进展

蓝光或紫外激光在光电子学和光储存方面有广阔的应用，一直是国际上关注的前沿领域．而金刚石是最好的半导体紫外发光材料．特别是用于高温、高压、高功率、强辐射和强腐蚀环境中更能显示其优越性．目前人们已在实验上用同质外延、异质外延的方法制备了金刚石紫外发光二极管，观察到了较强的紫外光发射．人们尝试用金刚石与其他半导体材料结合的方法，成功地研制出了金刚石紫外发光二极管，开拓了该研究领域最新研究方向．文章对这些金刚石紫外发光器件研究的最新进展进行了评述．     

Observation of two-photon absorption at UV radiation in ZnS quantum dots

Research studies on quantum dots (QDs) of semiconductor materials are of potential interest in present days having promising applications in different optoelectronic devices. Among other materials, ZnS is a direct bandgap semiconductor material having a wide bandgap of 3.6 eV for its cubic phase at room temperature and it shows excellent optical properties. However, here the nonlinear optical (NLO) properties of chemically synthesized ZnS QDs of average size of ～1.5 nm have been reported which are measured by using an indigenously developed Z-scan technique. The pump radiation is 355 nm which is the third harmonic of the Q-switched Nd:YAG laser radiation having pulsed duration of 10 ns with the repetition rate of 10 Hz. The measured experimental data have been analysed by using analytical models and two-photon absorption coefficients of the ZnS QDs at 355 nm have been extracted.     

Cascaded deep ultraviolet light-emitting diode via tunnel junction

The Al Ga N-based deep ultraviolet(DUV) light-emitting diode(LED) is an alternative DUV light source to replace traditional mercury-based lamps. However, the state-of-the-art DUV LEDs currently exhibit poor wall-plug efficiency and low light output power, which seriously hinder their commercialization. In this work, we design and report a tunnel-junctioncascaded(TJC) DUV LED, which enables multiple radiative recombinations within the active regions. Therefore, the light output power of the TJC-DUV LEDs is more than doubled compared to the conventional DUV LED. Correspondingly, the wall-plug efficiency of the TJC-DUV LED is also significantly boosted by 25% at 60 m A.     

Ultraviolet photodetectors based on wide bandgap oxide semiconductor films

Ultraviolet(UV) photodetectors have attracted more and more attention due to their great potential applications in missile tracking, flame detecting, pollution monitoring, ozone layer monitoring, and so on. Owing to the special characteristics of large bandgap, solution processable, low cost, environmentally friendly, etc., wide bandgap oxide semiconductor materials, such as ZnO, ZnMgO, Ga_2O_3, TiO_2, and Ni O, have gradually become a series of star materials in the field of semiconductor UV detection. In this paper, a review is presented on the development of UV photodetectors based on wide bandgap oxide semiconductor films.     

Band gap engineering of atomically thin two-dimensional semiconductors

Atomically thin two-dimensional(2D) layered materials have potential applications in nanoelectronics, nanophotonics, and integrated optoelectronics. Band gap engineering of these 2D semiconductors is critical for their broad applications in high-performance integrated devices, such as broad-band photodetectors, multi-color light emitting diodes(LEDs), and high-efficiency photovoltaic devices. In this review, we will summarize the recent progress on the controlled growth of composition modulated atomically thin 2D semiconductor alloys with band gaps tuned in a wide range, as well as their induced applications in broadly tunable optoelectronic components. The band gap engineered 2D semiconductors could open up an exciting opportunity for probing their fundamental physical properties in 2D systems and may find diverse applications in functional electronic/optoelectronic devices.     

III-Nitride Quantum Devices—Microphotonics

Photonic devices based on III-nitrides offer benefits such as UV/blue emission, large band offsets of InN/GaN/AlN heterostructures allowing novel quantum well (QW) device design, and inherently high-emission efficiencies. Furthermore, due to their mechanical hardness and larger band gaps (when compared with conventional semiconductor devices), III-nitride-based devices may operate at much higher temperatures and voltages/power levels for any dimensional configuration and in harsher environments than other semiconductor devices and are expected to provide much lower temperature sensitivities. These are crucial advantages for many applications. Over the last decade, the physics of microsize photonic devices has been investigated. New physical phenomena and properties are expected to dominate as the device size scales down. The microsize light emitters offer benefits over edge emitters such as the ability to create arrays of individually controllable pixels on a single chip, enhanced quantum efficiency, and greatly reduced lasing threshold. Rapid progress in the area of III-nitride microphotonics has been made. The growth and fabrication of micron and submicron size photonic structures based on III-nitride wide bandgap semiconductors has been achieved, and the technology has made it possible to integrate arrays of optical elements to form active photonic-integrated devices. One example is an interconnected µ-LED with enhanced emission efficiency over the conventional LEDs for the same device area. Another example is a µ-LED array with independently addressed pixels or III-nitride microdisplay. III-nitride microdisplay may offer performance that is superior to microdisplays fabricated from liquid crystals and organic LEDs. The third example presented is III-nitride UV Focal Plane Arrays (UV-FPA) of detectors. So far, the operation of AlGaN UV-FPA with size up to 256×256 pixels with 30×30?μm² unit cells has been demonstrated. Together with the nature of their two-dimensional array, these active micro-photonic devices show promise in many important applications, such as optical communications, signal and image processing, optical interconnects, computing, enhanced energy conversion and storage, chemical, biohazard substances, and disease detection, missile and shellfire, atmospheric ozone-level, and flame sensing. III-nitride microlens arrays have been fabricated successfully for blue and UV wavelength applications on GaN and AlN. The successful fabrication of microlens arrays based on III-nitride materials opens the possibility for monolithically integrating nitride-based micro-size photonic devices, as well as coupling light into, out of, and between arrays of III-nitride emitters and detectors, especially for short wavelengths covering the green-blue to deep UV (200?nm) region. Nanofabrication and characterization of photonic crystals with diameter/periodicity as small as 100/180?nm on InGaN/GaN MQW has been achieved. An unprecedented maximum enhancement factor of 20 was obtained under optical pumping. Single-mode ridged optical waveguide devices using GaN/AlGaN heterostructures have been designed, fabricated, and characterized for operation in 1550?nm wavelength window. The feasibility of developing novel photonic integrated circuits based on III-nitride wide bandgap semiconductors for fiber-optical communications has been investigated.     

Fine grains ceramics of PIN-PT, PIN-PMN-PT and PMN-PT systems: drift of the dielectric constant under high electric field

Lead-based ferroelectric ceramics with (1-x)Pb(B1 B2)O3-xPbTiO3 formula have emerged as a group of promising materials for various applications like ultrasonic sonars or medical imaging transducers. (1-x)PMN-xPT, (1-x)PIN-xPT and ternary solutions xPIN-yPMN-zPT ceramics are synthesised using the solid state reaction method. Our objective is to achieve higher structural transition temperatures than those of PMN-PT ceramics with as good dielectric, piezoelectric and electromechanical properties. Ceramics capacitance and loss tangent are measured when the ac field of measurement increases up to E=500 V/mm. Behaviours of these materials under ac field are related to their coercive field and Curie temperature.     

Enhancement of surface emission in deep ultraviolet AlGaN-based light emitting diodes with staggered quantum wells

The optical polarization properties of staggered AlGaN-AlGaN/AlN quantum wells (QWs) are investigated using the theoretical model based on the k·p method. The numerical results show that the energy level order and coupling relation of the valence subband structure change in the staggered QWs and the trend is beneficial to TE polarized transition compared to that of conventional AlGaN/AlN QWs. As a result, the staggered QWs have much stronger TE-polarized emission than conventional AlGaN-based QWs, which can enhance the surface emission of deep ultraviolet (DUV) light-emitting diodes (LEDs). The polarization control by using staggered QWs can be applied in high efficiency DUV AlGaN-based LEDs.     

Bandgap engineering of GaxZn1–xO nanowire arrays for wavelength‐tunable light‐emitting diodes

Wavelength‐tunable light‐emitting diodes (LEDs) of Ga_xZn_1–xO nanowire arrays are demonstrated by a simple modified chemical vapor deposition heteroepitaxial growth on p‐GaN substrate. As a gallium atom has similar electronegativity and ion radius to a zinc atom, high‐level Ga‐doped Ga_xZn_1–xO nanowire arrays have been fabricated. As the x value gradually increases from 0 to 0.66, the near‐band‐edge emission peak of Ga_xZn_1–xO nanowires shows a significant shift from 378 nm (3.28 eV) to 418 nm (2.96 eV) in room‐temperature photoluminescence (PL) measurement. Importantly, the electroluminescence (EL) emission of Ga_xZn_1–xO nanowire arrays LED continuously shifts with a wider range (∼100 nm), from the ultraviolet (382 nm) to the visible (480 nm) spectral region. The presented work demonstrates the possibility of bandgap engineering of low‐dimensional ZnO nanowires by gallium doping and the potential application for wavelength‐tunable LEDs.     

A reproducible route to p-ZnO films and their application in light-emitting devices

Although great efforts have been made, reproducible p-type doping is still one of the largest hurdles that hinders the optoelectronic applications of ZnO. In this Letter, a reproducible route to p-type ZnO films employing lithium-nitrogen as a dual-acceptor dopant has been demonstrated, and p-i-n structured light-emitting devices (LEDs) have been constructed. Obvious purple emissions have been observed from the LEDs, confirming the applicability of the p-type ZnO films in optoelectronic devices. The results reported in this Letter provide a reproducible route to p-type ZnO films, and thus may lay a solid ground for future optoelectronic applications of ZnO.     

Progress and prospects of GaN-based LEDs using nanostructures

Progress with GaN-based light emitting diodes(LEDs) that incorporate nanostructures is reviewed,especially the recent achievements in our research group.Nano-patterned sapphire substrates have been used to grow an Al N template layer for deep-ultraviolet(DUV) LEDs.One efficient surface nano-texturing technology,hemisphere-cones-hybrid nanostructures,was employed to enhance the extraction efficiency of In GaN flip-chip LEDs.Hexagonal nanopyramid GaN-based LEDs have been fabricated and show electrically driven color modification and phosphor-free white light emission because of the linearly increased quantum well width and indium incorporation from the shell to the core.Based on the nanostructures,we have also fabricated surface plasmon-enhanced nanoporous GaN-based green LEDs using AAO membrane as a mask.Benefitting from the strong lateral SP coupling as well as good electrical protection by a passivation layer,the EL intensity of an SP-enhanced nanoporous LED was significantly enhanced by 380%.Furthermore,nanostructures have been used for the growth of GaN LEDs on amorphous substrates,the fabrication of stretchable LEDs,and for increasing the3-d B modulation bandwidth for visible light communication.     

直接带隙Ge$lt;sub$gt;1-$lt;em$gt;x$lt;/em$gt;$lt;/sub$gt;Sn$lt;sub$gt;$lt;em$gt;x$lt;/em$gt;$lt;/sub$gt;本征载流子浓度研究

通过合金化改性技术, Ge可由间接带隙半导体转变为直接带隙半导体. 改性后的Ge半导体可同时应用于光子器件和电子器件, 极具发展潜力. 基于直接带隙Ge_1-xSn_x半导体合金8带Kronig-Penny模型, 重点研究了其导带有效状态密度、价带有效状态密度及本征载流子浓度, 旨在为直接带隙改性Ge半导体物理的理解及相关器件的研究设计提供有价值的参考. 研究结果表明: 直接带隙Ge_1-xSn_x合金导带有效状态密度随着Sn组分x的增加而明显减小, 价带有效状态密度几乎不随Sn组分变化. 与体Ge半导体相比, 直接带隙Ge_1-xSn_x合金导带有效状态密度、价带有效状态密度分别低两个和一个数量级; 直接带隙Ge_1-xSn_x合金本征载流子浓度随着Sn组分的增加而增加, 比体Ge半导体高一个数量级以上. 关键词： 1-xSn_x')" href="#">Ge_1-xSn_x 直接带隙 本征载流子浓度     

VPE ZnSxSe1-x外延膜的生长及其光致发光

本文用气相外延(VPE)法在(100)GaAs衬底上生长了ZnSxSe1-x外延膜,并通过改变ZnS源温度和衬底温度使组分x值控制在0—1范围内。外延膜在77K时的光致发光(PL)光谱的近带边发射峰很强,半高宽较窄,这表明VPE ZnSxSe1-x外延膜的质量较高。     

Characteristics of deep ultraviolet AlGaN-based light emitting diodes with p-hBN layer

The AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) with p-hBN layer are investigated numerically. In comparison with the conventional AlGaN DUV LEDs, the proposed LED can significantly improve the carrier injection, radiative efficiency, as well as the electroluminescence (EL) intensity under the same applied forward bias. Simultaneously, the light extraction efficiency in the LED using p-hBN instead of p-AlGaN exhibits a more than 250% increase at the applied voltage of 7.5 V due to the smaller loss of reflection and absorption of the emitted light.     

First-Principles Calculations about Elastic and Li+ Transport Properties of Lithium Superoxides under High Pressure and High Temperature

Lithium superoxides,Li2O3,LiO2,and LiO4,have been synthesized under high pressure.These materials have potential applications in energy storage devices.Here,we ...     

Theoretical study of M6X2 and M6XX' structure (M = Au,Ag; X,X' = S,Se): Electronic and optical properties,ability of photocatalytic water splitting,and tunable properties under biaxial strain

MoS$_{2}$, a transition metal dichalcogenide (TMDC), has attracted significant amount of attention due to its direct bandgap, tunability and optical properties. Recently, a novel structure consisting of MoS$_{2}$ and noble metal nanoclusters has been reported. Inspired by this, first principle calculations are implemented to predict the structures of $M_{6}X_{2}$ and $M_{6}XX'$ ($M= {\rm Au}$, Ag; $X$, $X' ={\rm S}$, Se). The calculated bandgap, band edge position, and optical absorption of these structures prove that the silver compounds (Ag$_{6}X_{2 }$ and Ag$_{6}XX'$) have great potential for catalytic water splitting. In addition, biaxial strain (tensile strain and compressive strain) is applied to adjust the properties of these materials. The bandgap presents a quasi-linear trend with the increase of the applied strain. Moreover, the transition between the direct and indirect bandgap is found. The outstanding electronic and optical properties of these materials provide strong evidence for their application in microelectronic devices, photoelectric devices, and photocatalytic materials.     

ZnO and ZnS Nanostructures: Ultraviolet-Light Emitters,Lasers, and Sensors

ZnO and ZnS, well-known direct bandgap II–VI semiconductors, are promising materials for photonic, optical, and electronic devices. Nanostructured materials have lent a leading edge to the next generation technology due to their distinguished performance and efficiency for device fabrication. As two of the most suitable materials with size- and dimensionality-dependent functional properties, wide bandgap semiconducting ZnO and ZnS nanostructures have attracted particular attention in recent years. For example, both materials have been assembled into nanometer-scale visible-light-blind ultraviolet (UV) light sensors with high sensitivity and selectivity, in addition to other applications such as field emitters and lasers. Their high-performance characteristics are particularly due to the high surface-to-volume ratios (SVR) and rationally designed surfaces. This article provides a comprehensive review of the state-of-the-art research activities in ZnO and ZnS nanostructures, including their syntheses and potential applications, with an emphasis on one-dimensional (1D) ZnO and ZnS nanostructure-based UV light emissions, lasers, and sensors. We begin with a survey of nanostructures, fundamental properties of ZnO and ZnS, and UV radiation–based applications. This is followed by detailed discussions on the recent progress of their synthesis, UV light emissions, lasers, and sensors. Additionally, developments of ZnS/ZnO composite nanostructures, including core/shell and heterostructures, are discussed and their novel optical properties are reviewed. Finally, we conclude this review with the perspectives and outlook on the future developments in this area. This review explores the possible influences of research breakthroughs of ZnO and ZnS nanostructures on the current and future applications for UV light–based lasers and sensors.