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1.
通过自由基共聚合,制备了前驱体共聚物聚对特丁氧酰氧基苯乙烯-共-N-羟基-5-降冰片烯-2,3-二甲酰亚胺甲基丙烯酸酯,该共聚物可以通过热解而部分脱除酚羟基上的保护基,得到目标共聚物聚对羟基苯乙烯-共-N-羟基-5-降冰片烯-2,3-二甲酰亚胺甲基丙烯酸酯-共-对特丁氧酰氧基苯乙烯.通过对具有合适分子量的目标共聚物的有机溶剂溶解性、热性能、成膜性、抗干蚀刻能力和在248 nm处光学吸收(为0.212 μm-1)性能进行研究,表明该聚合物能满足248 nm光刻胶成膜树脂的要求;此外,目标共聚物还具有酸致脱保性能.具有合适分子量和脱保率的目标共聚物,通过对其酸解留膜率的测试,推测其可能满足248 nm光刻胶的曝光显影工艺过程.  相似文献   

2.
主要综述了聚羟基苯乙烯用作深紫外光致抗蚀剂主体成膜树脂的发展历程、应用现状以及一些最新的研究进展,并简要介绍了聚羟基苯乙烯的单体衍生物及其聚合物的制备方法.  相似文献   

3.
本文引入单体MAGME合成了具有自交联作用的MAGME、苯乙烯和N(4 羟基苯基)马来酰亚胺的共聚物,并以该聚合物为基体树脂,研制了一种新型的水显影化学增幅型负性抗蚀剂,并初步研究了其光刻工艺条件.  相似文献   

4.
以7-羟基-4-甲基香豆素为原料,依次与环氧氯丙烷、二硫化钠反应得一含香豆素基元的二硫化物(C-S-S-C),并以其与三丁基膦复合体系为链转移剂,偶氮二异丁腈(AIBN)为引发剂,N-异丙基丙烯酰胺(NIPAAm)为单体制备了末端为香豆素光响应基元的双亲性遥爪聚合物(C-PNIPAAm).用傅里叶变换红外(FT-IR)光谱、凝胶渗透色谱(GPC)、氢核磁共振(1H-NMR)等对该聚合物进行了结构表征.研究显示该双亲性遥爪聚合物可在水中直接形成胶束,并以荧光素为疏水性客体考察了聚合物胶束的光控释放行为.在波长大于310 nm的紫外光照射下,聚合物链末端的香豆素单元可进行光二聚,胶束结构随之改变,因而所负载的荧光素可得到逐步有效释放.动态激光光散射(DLS)检测显示,光二聚反应使聚合物胶束平均粒径从56.6 nm增大至101.0 nm.  相似文献   

5.
综述了用于248 nm化学增幅型深紫外光刻胶的不同种类和结构的成膜树脂,以及所使用单体的研发进展,包括聚甲基丙烯酸甲酯及其衍生物、聚对羟基苯乙烯及其衍生物、N取代的马来酰亚胺衍生物,以及其他聚合物等,对不同结构成膜树脂的曝光条件、对光刻胶性能的影响进行了介绍。  相似文献   

6.
用于光致抗蚀剂的聚对羟基苯乙烯的合成及其进展   总被引:2,自引:0,他引:2  
随着集成电路芯片的发展,生产物理和化学性质均一的高分子光阻剂得到了各信息产业国的重视.到目前为止,含对羟基苯乙烯基的高分子光阻剂已成为光刻蚀0.11μm线宽芯片的关键技术.本文综述了目前合成窄分布的含对羟基苯乙烯基的高分子光阻剂的各种方法,在此基础上比较了各种合成方法的优缺点,为合成窄分布的含对羟基苯乙烯基的高分子光阻剂提供了必要的指导.  相似文献   

7.
本文合成了一种具有高玻璃化温度的苯乙烯和N-(4-羟基苯基)马来酰亚胺的共聚体,并将其应用于紫外负性水型化学增幅抗蚀剂中,并初步确定了该光致抗蚀剂的光刻工艺操作条件,得到了分辨率为1.39µm的光刻图形。  相似文献   

8.
通过简单的两步反应, 合成出新型超枝状聚己内酯/聚缩水甘油醚嵌段共聚物. 以月桂醇为引发剂, 通过开环聚合反应合成羟基封端的聚己内酯; 将聚己内酯进一步和萘钾反应, 得到基于己内酯的大分子引发剂; 引发缩水甘油醚的聚合, 最终形成聚己内酯/聚缩水甘油醚嵌段共聚物. 通过核磁共振氢谱、红外光谱和葡聚糖凝胶色谱对聚合物进行定性表征. 结果表明, 所得到的聚合物既具有聚己内酯的特征峰, 又有聚缩水甘油醚的特征峰, 通过核磁共振氢谱计算出二者在嵌段共聚物中的比例. 在这些聚合物骨架上存在大量的羟基末端基团, 葡聚糖凝胶色谱表征得到单峰, 进一步证明聚合物为嵌段共聚物. 相对于单纯的聚己内酯, 这种聚合物结构的突出优势在于其具有大量可修饰的高活性端基基团, 通过对端基基团的后修饰, 可实现各类配体及多种药物的偶联, 使这种新型材料有可能应用于多功能靶向药物传递.  相似文献   

9.
利用叶立德活性聚合方法制备了两种基于聚亚甲基的大分子单体. 其中一种是以叶立德活性聚合制备的主链链端含有羟基的聚亚甲基(PM-OH)为原料, 通过链端羟基的基团转换, 得到链端含有甲基丙烯酸酯基的大分子单体. 另一种则是以硼烷-四氢呋喃(BH3-THF)和二乙烯基苯反应得到的三烷基硼中间体为催化剂和引发剂, 然后进行叶立德活性聚合, 再经过二水合氧化三甲胺(TAO)的氧化, 最终得到基于聚亚甲基的一端含有羟基另一端含有苯乙烯基的大分子单体. 通过高温核磁氢谱、傅立叶红外光谱和高温凝胶色谱法表征了这两种大分子单体的链结构和分子量及其分布.  相似文献   

10.
以金刚烷甲酸(1)为起始原料,经过酰化,取代,脱羧三步反应一锅法制得金刚烷甲基酮(2),然后氧化甲基得到1-金刚烷基乙醛酸(3),将3与盐酸羟氨反应得到1-金刚烷乙醛酸肟(4),还原4并用BOC酸酐保护氨基得到N-叔丁氧羰基-1-金刚烷基甘氨酸(5),最后经高锰酸钾氧化得到DPP-IV抑制剂沙格列汀中间体N-叔丁氧羰基-3-羟基-1-金刚烷基甘氨酸(6),总收率28%。  相似文献   

11.
A novel photo‐acid generator (PAG) bound molecular glass photoresist with a single protecting group has been developed as a promising resist material for use in microelectronics. This single component molecular resist was prepared in four steps starting from 9,9‐bis(4‐hydroxyphenyl)fluorene. The single component molecular resist exhibited good thermal properties, such as a 10% weight loss temperature of 200 °C and a glass transition temperature of 91 °C. This resist showed a good sensitivity of 60 μC/cm2 with e‐beam exposure (50 keV). On the other hand, the fine pattern with a half‐pitch of 50 nm in the presence of 4 wt % quencher, trioctylamine, was obtained using electron‐beam (100 keV) lithography. The LER value was 8.2 nm (3σ, 60 nm half‐pitch patterns). © 2013 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2013  相似文献   

12.
Poly(di-tert-butyl fumarate) was prepared and evaluated as a potential candidate as a deep UV photoresist. Although this polymer displayed excellent sensitivity, the polymer was found to exhibit poor dry etch resistance. Copolymers of di-tert-butyl fumarate with either allyltrimethylsilane or styrene, and an onium salt as a photoacid generator were synthesized and subsequently evaluated using a 248-nm KrF excimer laser step-and-repeat system (stepper). At 248 nm, the absorbance of ~ 1 μm thick resist films was only 0.156-0.211. The sensitivities of these resists were 1-4 mJ/cm2. The dry etch resistance of these photoresists was comparable to that of conventional positive photoresists based on novolac resins. © 1995 John Wiley & Sons, Inc.  相似文献   

13.
A novel dendritic molecular glass(MG) containing adamantane core(AD-15) was synthesized and characterized. It exhibits good solubility in common organic solvents and a stable amorphous state at room temperature, which contributes to forming films with different thicknesses by spin-coating. The thermal analysis of AD-15 indicates that no apparent glass transition temperature(Tg) is observed before the thermal decomposition temperature(Td=160 ℃). The good thermal resistance suggests that it can satisfy the lithographic process and is a candidate for photoresist materials. The patterning properties of AD-15 resist were evaluated by electron beam lithography(EBL). By optimizing the lithographic process parameters, AD-15 resist can achieve 40 nm half-pitch patterns with a line-edge roughness of 4.0 nm. The contrast and sensitivity of AD-15 resist were 1.9 and 67 μC/cm2, respectively. Compared with the commercial PMMA(950k) electron beam resist, the sensitivity of AD-15 resist increases by 6 times. This study provides a new example of molecular glass resist with high resolution and sensitivity for EBL.  相似文献   

14.
以邻苯二甲酸酐、盐酸羟胺和对甲苯磺酰氯为起始原料,合成了非离子型光致产酸剂——N-羟基邻苯二甲酰亚胺对甲苯磺酸酯,对其进行了红外、核磁共振和紫外表征,测定了其化学结构、溶解性和紫外吸收等性能.结果表明,这种非离子型产酸剂较离子型产酸剂在常用溶剂中有非常良好的溶解性,并在248 nm处有好的透明性,可用于深紫外光刻工艺体系.  相似文献   

15.
The interaction of the sodium salts of 3-(1-adamantyl)-1-hydroxy-1-propen-3-one and 4-(1-adamantyl)-1-hydroxy-1-buten-3-one with hydroxylamine, hydrazine, and guanidine leads to the synthesis of 5-(1-adamantyl)-5-hydroxy- and 5-(1-adamantylmethyl)-5-hydroxy-2-isoxazolines, 3-(1-adamantyl)- and 3-(1-adamantylmethyl)pyrazoles, 3-(1-adamantyl)-2-phenylpyrazole, and 4-(1-adamantyl)-2-amino- and 4-(1-adamantylmethyl)-2-aminopyrimidines.  相似文献   

16.
A new series of fluorinated anionic photoacid generators (PAGs) (F4-MBS-TPS, F4VBzBS-TPS, F4-IBBS-TPS, CF3 MBS-TPS, MTFBS-TPS and VBzTFBS-TPS), and corresponding PAG bound polymeric resists (HS-EA-PAG) based on hydroxystyrene (HOST) and 2-ethyl-2-adamantyl methacrylate (EA), (GB-EA-PAG) based on γ-butyrolactone methacrylate (GBLMA) and 2-ethyl-2-adamantyl methacrylate (EA) were prepared and characterized. The acid generating efficiency of PAG bound polymers (HS-EA-PAG) series was in the range of 54-81%, which agrees well with the electron withdrawing effect of the substituents. With regard to the referenced F4-PAG bound polymer with 68% acid generating efficiency, and our previously reported EUVL results of F4-MBS-TPS bound polymer photoresists, these new PAG bound polymers should be effective resists for 193 nm or EUV lithography.  相似文献   

17.
4,4’-二甲苯基三氟甲磺酸碘鎓盐可以被染料增感,在365 nm光照时分解产酸.尽管产生的酸与染料的胺基发生作用,依然能在后烘过程中催化缩醛聚合物酸敏基团的分解,但需要稍高的后烘温度和稍长的后烘时间.基于此,本文将酚醛树脂、缩醛聚合物、碘鎓盐产酸剂和染料组成了一种新型的化学增幅型i-线正性光致抗蚀剂材料,在曝光量为10...  相似文献   

18.
A new strategy for the synthesis of monodisperse polyphenols chemically bound to a rigid thermally stable molecular platform has been suggested. The platform has been prepared by the Suzuki–Miyaura reaction of a tetraboryl porphyrin derivative and 3-(4′-bromophenyl)-4,6-dimethoxyindole. Subsequent reactions of complete demethylation of obtained tetraindole and partial blocking of the corresponding phenolic hydroxyls by acid-labile protective groups have led to the formation of a final modified polyphenol compound of the porphyrin series. On the basis of the this polyphenol, a positive photoresist for lithography with exposure radiation at a wavelength of 13.5 nm has been developed; the photoresist affords the fabrication of topological structures with 16-nm resolution.  相似文献   

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